title: Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al₂O₃ passivation layer.
abstract: In current work, the effect of the growth cycles of atomic-layer-deposition (ALD) derived ultrathin Al2O3 interfacial passivation layer on the interface chemistry and electrical properties of MOS capacitors based on sputtering-derived HfTiO as gate dielectric on InGaAs substrate. Significant suppression of formation of Ga-O and As-O bond from InGaAs surface after deposition of ALD Al2O3 with growth cycles of 20 has been achieved. X-ray photoelectron spectroscopy (XPS) measurements have confirmed that suppressing the formation of interfacial layer at HfTiO/InGaAs interface can be achieved by introducing the Al2O3 interface passivation layer. Meanwhile, increased conduction band offset and reduced valence band offset have been observed for HfTiO/Al2O3/InGaAs gate stack. Electrical measurements of MOS capacitor with HfTiO/Al2O3/InGaAs gate stacks with dielectric thickness of ∼4 nm indicate improved electrical performance. A low interface-state density of (∼1.9) × 10(12) eV(-1) cm(-2) with low frequency dispersion ( ∼ 3.52%), small border trap density of 2.6 × 10(12) cm(-2), and low leakage current of 1.17 × 10(-5) A/cm(2) at applied gate voltage of 1 V have been obtained. The involved leakage current conduction mechanisms for metal-oxide-semiconductor (MOS) capacitor devices with and without Al2O3 interface control layer also have been discussed in detail.
authors.affiliation: School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University , Hefei 230039, P.R. China.
authors.forename: Gang
authors.initials: G
authors.lastname: He
authors.forename: Juan
authors.initials: J
authors.lastname: Gao
authors.forename: Hanshuang
authors.initials: H
authors.lastname: Chen
authors.forename: Jingbiao
authors.initials: J
authors.lastname: Cui
authors.forename: Zhaoqi
authors.initials: Z
authors.lastname: Sun
authors.forename: Xiaoshuang
authors.initials: X
authors.lastname: Chen
keywords: atomic-layer-deposition; electrical properties; high-k gate dielectric; metal-oxide-semiconductor; surface passivation