title: Design of an efficient charge-trapping layer with a built-in tunnel barrier for reliable organic-transistor memory.
abstract: A fully feasible and versatile way to fabricate highly reliable organic-transistor memory devices is made possible by a novel design of the charge-trappling layer. Gold@silica (core-shell)-structured nanoparticles are synthesized and used as the charge-trapping layer. Superior electrical reliability is obtained because the silica shell acts as a built-in tunnel potential barrier.
authors.affiliation: School of Advanced Materials Engineering, Kookmin University, Seoul, 136-702, Korea.
authors.forename: Young-Su
authors.initials: YS
authors.lastname: Park
authors.forename: Jang-Sik
authors.initials: JS
authors.lastname: Lee
keywords: core-shell nanoparticles; memory devices; organic electronics; organic-transistor memory