title: Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers.
abstract: Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Transmission electron microscopy observation revealed the formation of Si QDs after 900°C annealing. The optical properties of the Si QDs/SiC multilayers were studied, and the optical band gap deduced from the optical absorption coefficient result is 1.48 eV. Moreover, the p-i-n structure with n-a-Si/i-(Si QDs/SiC multilayers)/p-Si was fabricated, and the carrier transportation mechanism was investigated. The p-i-n structure was used in a solar cell device. The cell had the open circuit voltage of 532 mV and the power conversion efficiency (PCE) of 6.28%.
  81.07.Ta; 78.67.Pt; 88.40.jj.
authors.affiliation: National Laboratory of Solid State Microstructures and School of Electronic Science and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Yunqing
authors.initials: Y
authors.lastname: Cao
authors.affiliation: National Laboratory of Solid State Microstructures and School of Electronic Science and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Lu
authors.affiliation: National Laboratory of Solid State Microstructures and School of Electronic Science and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Xiaowei
authors.initials: X
authors.lastname: Zhang
authors.affiliation: National Laboratory of Solid State Microstructures and School of Electronic Science and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Jun
authors.initials: J
authors.lastname: Xu
authors.affiliation: National Laboratory of Solid State Microstructures and School of Electronic Science and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Ling
authors.initials: L
authors.lastname: Xu
authors.affiliation: National Laboratory of Solid State Microstructures and School of Electronic Science and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Kunji
authors.initials: K
authors.lastname: Chen
keywords: Multilayers; Si quantum dots (Si QDs); Silicon carbide; Solar cell