title: Tunable charge-trap memory based on few-layer MoS2.
abstract: Charge-trap memory with high-κ dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention because of their fantastic physical properties and potential applications in electronic devices. Here, we report on a dual-gate charge-trap memory device composed of a few-layer MoS2 channel and a three-dimensional (3D) Al2O3/HfO2/Al2O3 charge-trap gate stack. Because of the extraordinary trapping ability of both electrons and holes in HfO2, the MoS2 memory device exhibits an unprecedented memory window exceeding 20 V. Importantly, with a back gate the window size can be effectively tuned from 15.6 to 21 V; the program/erase current ratio can reach up to 10(4), allowing for multibit information storage. Moreover, the device shows a high endurance of hundreds of cycles and a stable retention of ∼ 28% charge loss after 10 years, which is drastically lower than ever reported MoS2 flash memory. The combination of 2D materials with traditional high-κ charge-trap gate stacks opens up an exciting field of nonvolatile memory devices.
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.
authors.forename: Enze
authors.initials: E
authors.lastname: Zhang
authors.forename: Weiyi
authors.initials: W
authors.lastname: Wang
authors.forename: Cheng
authors.initials: C
authors.lastname: Zhang
authors.forename: Yibo
authors.initials: Y
authors.lastname: Jin
authors.forename: Guodong
authors.initials: G
authors.lastname: Zhu
authors.forename: Qingqing
authors.initials: Q
authors.lastname: Sun
authors.forename: David Wei
authors.initials: DW
authors.lastname: Zhang
authors.forename: Peng
authors.initials: P
authors.lastname: Zhou
authors.forename: Faxian
authors.initials: F
authors.lastname: Xiu
keywords: MoS2; charge-trap memory; dual gate; memory characteristics; memory window