title: Highly effective field-effect mobility amorphous InGaZnO TFT mediated by directional silver nanowire arrays.
abstract: In this work, we demonstrate sputtered amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a record high effective field-effect mobility of 174 cm(2)/V s by incorporating silver nanowire (AgNW) arrays to channel electron transport. Compared to the reference counterpart without nanowires, the over 5-fold enhancement in the effective field-effect mobility exhibits clear dependence on the orientation as well as the surface coverage ratio of silver nanowires. Detailed material and device analyses reveal that during the room-temperature IGZO sputtering indium and oxygen diffuse into the nanowire matrix while the nanowire morphology and good contact between IGZO and nanowires are maintained. The unchanged morphology and good interfacial contact lead to high mobility and air-ambient-stable characteristics up to 3 months. Neither hysteresis nor degraded bias stress reliability is observed. The proposed AgNW-mediated a-IGZO TFTs are promising for development of large-scale, flexible, transparent electronics.
authors.affiliation: Department of Photonics, Institute of Electro-Optical Engineering, National Chiao Tung University , Hsinchu 300, Taiwan.
authors.forename: Hung-Chuan
authors.initials: HC
authors.lastname: Liu
authors.forename: Yi-Chun
authors.initials: YC
authors.lastname: Lai
authors.forename: Chih-Chung
authors.initials: CC
authors.lastname: Lai
authors.forename: Bing-Shu
authors.initials: BS
authors.lastname: Wu
authors.forename: Hsiao-Wen
authors.initials: HW
authors.lastname: Zan
authors.forename: Peichen
authors.initials: P
authors.lastname: Yu
authors.forename: Yu-Lun
authors.initials: YL
authors.lastname: Chueh
authors.forename: Chuang-Chuang
authors.initials: CC
authors.lastname: Tsai
keywords: IGZO; high mobility; oxide TFT; silver nanowire