title: Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy.
abstract: We report the observation of room temperature photoluminescence (PL) emission from GaAs/GaInAs core-multiple-quantum-well (MQW) shell nanowires (NWs) surrounded by AlGaAs grown by molecular beam epitaxy (MBE) using a self-catalyzed technique. PL spectra of the sample show two PL peaks, originating from the GaAs core NWs and the GaInAs MQW shells. The PL peak from the shell structure red-shifts with increasing well width, and the peak position can be tuned by adjusting the width of the MQW shell. The GaAs/GaInAs core-MQW shell NW surrounded by AlGaAs also shows an enhanced PL intensity due to the improved carrier confinement owing to the presence of an AlGaAs clad layer. The inclined growth of the GaAs NWs produces a core-MQW shell structure having a different PL peak position than that of planar QWs. The PL emission by MQW shell and the ability to tune the PL peak position by varying the shell width make such core-shell NWs highly attractive for realizing next generation ultrasmall light sources and other optoelectronics devices.
  81.07.Gf; 81.15.Hi; 78.55.Cr.
authors.affiliation: School of Information and Communications, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 500-712, Republic of Korea.
authors.forename: Kwang Wook
authors.initials: KW
authors.lastname: Park
authors.affiliation: School of Information and Communications, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 500-712, Republic of Korea ; Current address: Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 443-803, Republic of Korea.
authors.forename: Chang Young
authors.initials: CY
authors.lastname: Park
authors.affiliation: School of Information and Communications, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 500-712, Republic of Korea.
authors.forename: Sooraj
authors.initials: S
authors.lastname: Ravindran
authors.affiliation: School of Electrical Engineering and Computer Science, Department of Electronics, Yeungnam University, 280 Daehak-ro, Gyeongsan, Gyeongsangbuk-do 712-749, Republic of Korea.
authors.forename: Ja-Soon
authors.initials: JS
authors.lastname: Jang
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 500-712, Republic of Korea.
authors.forename: Yong-Ryun
authors.initials: YR
authors.lastname: Jo
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 500-712, Republic of Korea.
authors.forename: Bong-Joong
authors.initials: BJ
authors.lastname: Kim
authors.affiliation: School of Information and Communications, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 500-712, Republic of Korea ; Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 500-712, Republic of Korea.
authors.forename: Yong Tak
authors.initials: YT
authors.lastname: Lee
keywords: Core-shell nanowire; GaAs/GaInAs multiple-quantum-well; Molecular beam epitaxy