title: One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application.
abstract: In this work, we presented a surface mechanical attrition treatment (SMAT)-assisted approach to the synthesis of one-dimensional copper oxide nanowires (CuO NWs) for nanodevices applications. The as-prepared CuO NWs have diameter and the length of 50 ~ 200 nm and 5 ~ 20 μm, respectively, with a preferential growth orientation along [1 [Formula: see text] 0] direction. Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO NW exhibited typical p-type electrical conduction, with a hole mobility of 0.129 cm(2)V(-1) s(-1) and hole concentration of 1.34 × 10(18) cm(-3), respectively. According to first-principle calculations, such a p-type electrical conduction behavior was related to the oxygen vacancies in CuO NWs. What is more, the CuO NW device was sensitive to visible light illumination with peak sensitivity at 600 nm. The responsitivity, conductive gain, and detectivity are estimated to be 2.0 × 10(2) A W(-1), 3.95 × 10(2) and 6.38 × 10(11) cm Hz(1/2) W(-1), respectively, which are better than the devices composed of other materials. Further study showed that nanophotodetectors assembled on flexible polyethylene terephthalate (PET) substrate can work under different bending conditions with good reproducibility. The totality of the above results suggests that the present CuO NWs are potential building blocks for assembling high-performance optoelectronic devices.
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China ; Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, People's Republic of China.
authors.forename: Lin-Bao
authors.initials: LB
authors.lastname: Luo
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China.
authors.forename: Xian-He
authors.initials: XH
authors.lastname: Wang
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China.
authors.forename: Chao
authors.initials: C
authors.lastname: Xie
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China.
authors.forename: Zhong-Jun
authors.initials: ZJ
authors.lastname: Li
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China.
authors.forename: Rui
authors.initials: R
authors.lastname: Lu
authors.affiliation: Department of Physics, South China University of Technology, Guangzhou, Guangdong Province 510641, People's Republic of China.
authors.forename: Xiao-Bao
authors.initials: XB
authors.lastname: Yang
authors.affiliation: Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, People's Republic of China ; Centre for Advanced Structural Materials, City University of Hong Kong Shenzhen Research Institute, 8 Yuexing 1st Road, Shenzhen Hi-Tech Industrial Park, Shenzhen, People's Republic of China.
authors.forename: Jian
authors.initials: J
authors.lastname: Lu
keywords: Flexible photodetector; Metal oxide; Semiconductor nanostructures; Surface mechanical attrition treatment (SMAT); The first-principle calculation