title: Simultaneous orientation and thickness mapping in transmission electron microscopy.
abstract: In this paper we introduce an approach for simultaneous thickness and orientation mapping of crystalline samples by means of transmission electron microscopy. We show that local thickness and orientation values can be extracted from experimental dark-field (DF) image data acquired at different specimen tilts. The method has been implemented to automatically acquire the necessary data and then map thickness and crystal orientation for a given region of interest. We have applied this technique to a specimen prepared from a commercial semiconductor device, containing multiple 22 nm technology transistor structures. The performance and limitations of our method are discussed and compared to those of other techniques available.
authors.affiliation: Institute for Experimental Physics, University of Ulm, Albert-Einstein-Allee 11, 89081 Ulm, Germany. Electronic address: dmitry.tyutyunnikov@uni-ulm.de.
authors.forename: Dmitry
authors.initials: D
authors.lastname: Tyutyunnikov
authors.affiliation: National Center for Electron Microscopy, MS 72-150 Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States.
authors.forename: V
authors.initials: V
authors.lastname: Burak Özdöl
authors.affiliation: Institute for Experimental Physics, University of Ulm, Albert-Einstein-Allee 11, 89081 Ulm, Germany.
authors.forename: Christoph T
authors.initials: CT
authors.lastname: Koch
keywords: Orientation and thickness mapping; Transmission electron microscopy