title: Fabrication of current confinement aperture structure by transforming a conductive GaN:Si epitaxial layer into an insulating GaOx layer.
abstract: We report here a simple and robust process to convert embedded conductive GaN epilayers into insulating GaOx and demonstrate its efficacy in vertical current blocking and lateral current steering in a working LED device. The fabrication processes consist of laser scribing, electrochemical (EC) wet-etching, photoelectrochemical (PEC) oxidation, and thermal oxidization of a sacrificial n(+)-GaN:Si layer. The conversion of GaN is made possible through an intermediate stage of porosification where the standard n-type GaN epilayers can be laterally and selectively anodized into a nanoporous (NP) texture while keeping the rest of the layers intact. The fibrous texture of NP GaN with an average wall thickness of less than 100 nm dramatically increases the surface-to-volume ratio and facilitates a rapid oxidation process of GaN into GaOX. The GaOX aperture was formed on the n-side of the LED between the active region and the n-type GaN layer. The wavelength blueshift phenomena of electroluminescence spectra is observed in the treated aperture-emission LED structure (441.5 nm) when compared to nontreated LED structure (443.7 nm) at 0.1 mA. The observation of aperture-confined electroluminescence from an InGaN LED structure suggests that the NP GaN based oxidation will play an enabling role in the design and fabrication of III-nitride photonic devices.
authors.affiliation: Department of Materials Science and Engineering, National Chung Hsing University , 250 Kuo Kuang Road, Taichung 402, Taiwan.
authors.forename: Chia-Feng
authors.initials: CF
authors.lastname: Lin
authors.forename: Wen-Che
authors.initials: WC
authors.lastname: Lee
authors.forename: Bing-Cheng
authors.initials: BC
authors.lastname: Shieh
authors.forename: Danti
authors.initials: D
authors.lastname: Chen
authors.forename: Dili
authors.initials: D
authors.lastname: Wang
authors.forename: Jung
authors.initials: J
authors.lastname: Han
keywords: current confinement structure; insulating GaOx; nanoporous GaN