title: Wafer-scale transfer of vertically aligned carbon nanotube arrays.
abstract: The first critical step in making vertically aligned carbon nanotube (VACNT)-based thermal interface materials is to transfer the VACNTs on a large scale. Although VACNTs have been transferred by several methods, they were only transferred inadvertently in most cases. Here we report well-controlled weak-oxidation-assisted transfer of VACNTs. Specifically, after a short time of weak oxidation, we found that VACNTs could be easily detached from the native growth substrates, and thus, a freestanding VACNT film was obtained. Then the VACNTs could be assembled onto specific substrates for its real applications. More importantly, the repeated growth-transfer synthesis of VACNT arrays can be realized in one batch by introducing an additional process of weak oxidation in chemical vapor deposition, which makes the strategy more effective. Surprisingly, no degradation in the quality was observed before and after the weak oxidation according to thermogravimetric analysis and Raman spectra of VACNTs. Enhanced thermal and mechanical properties were achieved after reactive ion etching (RIE) and subsequent metallization of the surfaces of the VACNTs, and this might be due to the removal of impurities such as amorphous carbon and entangled CNTs by RIE. These findings provide an efficient approach for transferring VACNTs, which is important for the application of VACNTs in thermal management.
authors.affiliation: Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences , Suzhou 215123, China.
authors.forename: Miao
authors.initials: M
authors.lastname: Wang
authors.forename: Taotao
authors.initials: T
authors.lastname: Li
authors.forename: Yagang
authors.initials: Y
authors.lastname: Yao
authors.forename: Huifen
authors.initials: H
authors.lastname: Lu
authors.forename: Qiang
authors.initials: Q
authors.lastname: Li
authors.forename: Minghai
authors.initials: M
authors.lastname: Chen
authors.forename: Qingwen
authors.initials: Q
authors.lastname: Li