title: Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition.
abstract: The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition. X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy show that the films lattice-matched with GaN can have a very smooth surface with good crystallinity and uniform distribution of Al and In in AlInN.
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan.
authors.forename: Pei-Yin
authors.initials: PY
authors.lastname: Lin
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan.
authors.forename: Jr-Yu
authors.initials: JY
authors.lastname: Chen
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan.
authors.forename: Yi-Sen
authors.initials: YS
authors.lastname: Shih
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan.
authors.forename: Li
authors.initials: L
authors.lastname: Chang
keywords: AlInN; Epitaxy; GaN; Metal-organic chemical vapor deposition