title: High-Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth.
abstract: Wafer-scale defect-free planar III-V nanowire (NW) arrays with ∼100% yield and precisely defined positions are realized via a patterned vapor-liquid-solid (VLS) growth method. Long and uniform planar GaAs NWs were assembled in perfectly parallel arrays to form double-channel T-gated NW array-based high electron mobility transistors (HEMTs) with DC and RF performance surpassing those for all field-effect transistors (FETs) with VLS NWs, carbon nanotubes (CNTs), or graphene channels in-plane with the substrate. For a planar GaAs NW array-based HEMT with 150 nm gate length and 2 V drain bias, the on/off ratio (ION/IOFF), cutoff frequency (fT), and maximum oscillation frequency (fmax) are 10(4), 33, and 75 GHz, respectively. By characterizing more than 100 devices on a 1.5 × 1.5 cm(2) chip, we prove chip-level electrical uniformity of the planar NW array-based HEMTs and verify the feasibility of using this bottom-up planar NW technology for post-Si large-scale nanoelectronics.
authors.affiliation: †Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, 208 N. Wright Street, Urbana, Illinois 61801, United States.
authors.forename: Xin
authors.initials: X
authors.lastname: Miao
authors.affiliation: †Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, 208 N. Wright Street, Urbana, Illinois 61801, United States.|‡Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright-Patterson Air Force Base, Ohio 45433, United States.
authors.forename: Kelson
authors.initials: K
authors.lastname: Chabak
authors.affiliation: †Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, 208 N. Wright Street, Urbana, Illinois 61801, United States.
authors.forename: Chen
authors.initials: C
authors.lastname: Zhang
authors.affiliation: †Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, 208 N. Wright Street, Urbana, Illinois 61801, United States.
authors.forename: Parsian K
authors.initials: PK
authors.lastname: Mohseni
authors.affiliation: ‡Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright-Patterson Air Force Base, Ohio 45433, United States.
authors.forename: Dennis
authors.initials: D
authors.lastname: Walker
authors.affiliation: †Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, 208 N. Wright Street, Urbana, Illinois 61801, United States.
authors.forename: Xiuling
authors.initials: X
authors.lastname: Li
keywords: Bottom-up; III−V; VLS; VLSI; nanowire; transistor