title: Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size.
abstract: The dependence of electrical properties of rough and cylindrical Si nanowires (NWs) synthesized by diameter-controllable metal catalyst-assisted etching (MCE) on the size of the NW's diameter was demonstrated. Using a decal-printing and transfer process assisted by Al2O3 sacrificial layer, the Si NW field effect transistor (FET) embedded in a polyvinylphenol adhesive and dielectric layer were fabricated. As the diameter of Si NW increased, the mobility of FET increased from 80.51 to 170.95 cm(2)/V·s and the threshold voltage moved from -7.17 to 0 V because phonon-electron wave function overlaps, surface scattering, and defect scattering decreased and gate coupling increased as the ratio of surface-to-volume got reduced.
authors.affiliation: Department of Materials Science and Engineering, ‡Department of Electrical and Electronic Engineering, Yonsei University , Seoul, Korea.
authors.forename: Sang Hoon
authors.initials: SH
authors.lastname: Lee
authors.forename: Tae Il
authors.initials: TI
authors.lastname: Lee
authors.forename: Su Jeong
authors.initials: SJ
authors.lastname: Lee
authors.forename: Sang Myung
authors.initials: SM
authors.lastname: Lee
authors.forename: Ilgu
authors.initials: I
authors.lastname: Yun
authors.forename: Jae Min
authors.initials: JM
authors.lastname: Myoung
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry; D002384:Catalysis; D004563:Electrochemistry; D004566:Electrodes; D006046:Gold / Q000737:chemistry; D008422:Materials Testing; D053768:Metal Nanoparticles / Q000737:chemistry*; D046529:Microscopy, Electron, Transmission; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry*; D010316:Particle Size; D019800:Phenol / Q000737:chemistry; D011145:Polyvinyls / Q000737:chemistry; D012825:Silicon / Q000737:chemistry*; D012834:Silver / Q000737:chemistry; D013499:Surface Properties
chemical_list: D011145:Polyvinyls; D019800:Phenol; D012834:Silver; D006046:Gold; D000537:Aluminum Oxide; D012825:Silicon
keywords: diameter modulation; dielectrophorestic alignment; field effect transistor; silicon nanowires; transfer method