title: Broadband infrared photoluminescence in silicon nanowires with high density stacking faults.
abstract: Making silicon an efficient light-emitting material is an important goal of silicon photonics. Here we report the observation of broadband sub-bandgap photoluminescence in silicon nanowires with a high density of stacking faults. The photoluminescence becomes stronger and exhibits a blue shift under higher laser powers. The super-linear dependence on excitation intensity indicates a strong competition between radiative and defect-related non-radiative channels, and the spectral blue shift is ascribed to the band filling effect in the heterostructures of wurtzite silicon and cubic silicon created by stacking faults.
authors.affiliation: Department of Electrical and Computer Engineering, University of Houston, Houston, TX 77204, USA. jbao@uh.edu.
authors.forename: Yang
authors.initials: Y
authors.lastname: Li
authors.forename: Zhihong
authors.initials: Z
authors.lastname: Liu
authors.forename: Xiaoxiang
authors.initials: X
authors.lastname: Lu
authors.forename: Zhihua
authors.initials: Z
authors.lastname: Su
authors.forename: Yanan
authors.initials: Y
authors.lastname: Wang
authors.forename: Rui
authors.initials: R
authors.lastname: Liu
authors.forename: Dunwei
authors.initials: D
authors.lastname: Wang
authors.forename: Jie
authors.initials: J
authors.lastname: Jian
authors.forename: Joon Hwan
authors.initials: JH
authors.lastname: Lee
authors.forename: Haiyan
authors.initials: H
authors.lastname: Wang
authors.forename: Qingkai
authors.initials: Q
authors.lastname: Yu
authors.forename: Jiming
authors.initials: J
authors.lastname: Bao