title: Seamless stitching of graphene domains on polished copper (111) foil.
abstract: Seamless stitching of graphene domains on polished copper (111) is proved clearly not only at atomic scale by scanning tunnelling microscopy (STM) and transmission electron micoscopy (TEM), but also at the macroscale by optical microscopy after UV-treatment. Using this concept of seamless stitching, synthesis of 6 cm × 3 cm monocrystalline graphene without grain boundaries on polished copper (111) foil is possible, which is only limited by the chamber size.
authors.affiliation: IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 440-746, Republic of Korea; Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, 440-746, Republic of Korea.
authors.forename: Van Luan
authors.initials: VL
authors.lastname: Nguyen
authors.forename: Bong Gyu
authors.initials: BG
authors.lastname: Shin
authors.forename: Dinh Loc
authors.initials: DL
authors.lastname: Duong
authors.forename: Sung Tae
authors.initials: ST
authors.lastname: Kim
authors.forename: David
authors.initials: D
authors.lastname: Perello
authors.forename: Young Jin
authors.initials: YJ
authors.lastname: Lim
authors.forename: Qing Hong
authors.initials: QH
authors.lastname: Yuan
authors.forename: Feng
authors.initials: F
authors.lastname: Ding
authors.forename: Hu Young
authors.initials: HY
authors.lastname: Jeong
authors.forename: Hyeon Suk
authors.initials: HS
authors.lastname: Shin
authors.forename: Seung Mi
authors.initials: SM
authors.lastname: Lee
authors.forename: Sang Hoon
authors.initials: SH
authors.lastname: Chae
authors.forename: Quoc An
authors.initials: QA
authors.lastname: Vu
authors.forename: Seung Hee
authors.initials: SH
authors.lastname: Lee
authors.forename: Young Hee
authors.initials: YH
authors.lastname: Lee
keywords: UV-treatment; chemical vapor deposition (CVD); grain boundary; graphene growth; liquid crystals