title: Preparation of Ta-O-based tunnel junctions to obtain artificial synapses based on memristive switching.
abstract: Magnetron sputtering and optical lithography are standard techniques to prepare magnetic tunnel junctions with lateral dimensions in the micrometer range. Here we present the materials and techniques to deposit the layer stacks, define the structures, and etch the devices. In the end, we obtain tunnel junction devices exhibiting memristive switching for potential use as artificial synapses.
authors.affiliation: Thin films and Physics of Nanostructures, Physics Department, Bielefeld University, Bielefeld, Germany.
authors.forename: Stefan
authors.initials: S
authors.lastname: Niehörster
authors.forename: Andy
authors.initials: A
authors.lastname: Thomas
mesh_terms: D040761:Biomimetic Materials; D032701:Biomimetics / Q000295:instrumentation* / Q000379:methods*; D008954:Models, Biological; D013569:Synapses