title: Field effect transistors with current saturation and voltage gain in ultrathin ReS2.
abstract: We report the fabrication and device characteristics of exfoliated, few-layer, dual-gated ReS2 field effect transistors (FETs). The ReS2 FETs display n-type behavior with a room temperature Ion/I(off) of 10(5). Many devices were studied with a maximum intrinsic mobility of 12 cm(2) · V(-1) · s(-1) at room temperature and 26 cm(2) · V(-1) · s(-1) at 77 K. The Cr/Au-ReS2 contact resistance determined using the transfer length method is gate-bias dependent and ranges from 175 kΩ · μm to 5 kΩ · μm, and shows an exponential dependence on back-gate voltage indicating Schottky barriers at the source and drain contacts. Dual-gated ReS2 FETs demonstrate current saturation, voltage gain, and a subthreshold swing of 148 mV/decade.
authors.affiliation: Department of Electrical Engineering, The University of Texas at Austin , Austin, Texas 78712, United States.
authors.forename: Chris M
authors.initials: CM
authors.lastname: Corbet
authors.forename: Connor
authors.initials: C
authors.lastname: McClellan
authors.forename: Amritesh
authors.initials: A
authors.lastname: Rai
authors.forename: Sushant Sudam
authors.initials: SS
authors.lastname: Sonde
authors.forename: Emanuel
authors.initials: E
authors.lastname: Tutuc
authors.forename: Sanjay K
authors.initials: SK
authors.lastname: Banerjee
keywords: TMD; gain; mobility; rhenium disulfide; saturation; transistor