title: Resistive switching memory based on bioinspired natural solid polymer electrolytes.
abstract: A solution-processed, chitosan-based resistive-switching memory device is demonstrated with Pt/Ag-doped chitosan/Ag structure. The memory device shows reproducible and reliable bipolar resistive switching characteristics. A memory device based on natural organic material is a promising device toward the next generation of nonvolatile nanoelectronics. The memory device based on chitosan as a natural solid polymer electrolyte can be switched reproducibly between high and low resistance states. In addition, the data retention measurement confirmed the reliability of the chitosan-based nonvolatile memory device. The transparent Ag-embedded chitosan film showed an acceptable and comparable resistive switching behavior on the flexible plastic substrate as well. A cost-effective, environmentally benign memory device using chitosan satisfies the functional requirements of nonvolatile memory operations.
authors.affiliation: Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) , Pohang 790-784, South Korea.
authors.forename: Niloufar
authors.initials: N
authors.lastname: Raeis Hosseini
authors.forename: Jang-Sik
authors.initials: JS
authors.lastname: Lee
mesh_terms: D040761:Biomimetic Materials / Q000737:chemistry*; D048271:Chitosan / Q000737:chemistry*; D017097:Electric Impedance; D004563:Electrochemistry; D004566:Electrodes; D036103:Nanotechnology / Q000295:instrumentation*; D010984:Platinum / Q000737:chemistry; D012834:Silver / Q000737:chemistry
chemical_list: D012834:Silver; D010984:Platinum; D048271:Chitosan
keywords: chitosan; natural solid polymers; redox-based memory; resistive switching memory; solution processes