title: [Preparation of MgxZn1-xO/Au/MgxZn1-xO multilayer transparent conductive film and studies of its photoelectric properties].
abstract: In the present paper, MgxZn1-xO and MgxZn1-xO/Au/MgxZn1-xO multilayer structures of transparent conductive film were prepared by the simple operation of sol-gel and RF magnetron sputtering method on quartz substrate respectively and then they were annealed. The surface, electrical, crystal and optical properties of the films at different annealing temperature were determined by UV-Vis spectrophotometer, X-ray diffraction, photoluminescence and Hall effect, respectively. The influence of annealing temperature on the films was also investigated. The testing results indicated that the films with good c-axis orientation presented hexagonal wurtzite structure. With increasing Mg components, the optical band gap of ZnO thin film increased gradually. There was an obvious blue shift phenomenon in PL spectrum and absorption spectrum line. But the electrical properties of the films declined. In MgxZn1-xO/Au/MgxZn1-xO multilayer structure of thin film samples, the existence of Au interlining led to the poor optical properties of thin film, and the light transmittance in the ultraviolet region was 60%. Compared with MgxZn1-xO film, the electrical properties of MgxZn1-xO/Au/MgxZn1-xO multilayer structure of transparent conductive film were improved, the resistivity and migration rate were significantly increased. In addition, high temperature annealing treatment could effectively improve the crystal quality of thin film and further improve the electrical characteristics of the samples. After the annealing treatment at 500 °C, migration rate of the film reached to 40.9 cm2 · 1 Vs(-1) while the resistivity was 0.0057 Ω · cm. Due to the rising of temperature, the crystal size increased from 25.1 to 32.4 nm to reduce the mobility of the film. Therefore, MgxZn1-xO/Au/MgxZn1-xO multilayer structure of transparent conductive film played an important role in promoting the ZnO transparent conductive film application in deep ultraviolet devices.
authors.forename: Shan-Shan
authors.initials: SS
authors.lastname: Lü
authors.forename: Xuan
authors.initials: X
authors.lastname: Fang
authors.forename: Jia-Qi
authors.initials: JQ
authors.lastname: Wang
authors.forename: Fang
authors.initials: F
authors.lastname: Fang
authors.forename: Hai-Feng
authors.initials: HF
authors.lastname: Zhao
authors.forename: Xue-Ying
authors.initials: XY
authors.lastname: Chu
authors.forename: Jin-Hua
authors.initials: JH
authors.lastname: Li
authors.forename: Dan
authors.initials: D
authors.lastname: Fang
authors.forename: Ji-Long
authors.initials: JL
authors.lastname: Tang
authors.forename: Zhi-Peng
authors.initials: ZP
authors.lastname: Wei
authors.forename: Xiao-hui
authors.initials: XH
authors.lastname: Ma
authors.forename: Xiao-Hua
authors.initials: XH
authors.lastname: Wang
authors.forename: Shuang-Shuang
authors.initials: SS
authors.lastname: Pu
authors.forename: Li
authors.initials: L
authors.lastname: Xu