title: Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance.
abstract: An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an I ON/I OFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, QingHua East Road, Haidian District, Beijing, 100083, People's Republic of China.
authors.forename: Dalin
authors.initials: D
authors.lastname: Zhang
authors.affiliation: School of Materials Science & Engineering, Beijing Institute of Technology, South Zhongguancun Street, Haidian District, Beijing, 100081, People's Republic of China.
authors.forename: Gong
authors.initials: G
authors.lastname: Cheng
authors.affiliation: School of Materials Science & Engineering, Beijing Institute of Technology, South Zhongguancun Street, Haidian District, Beijing, 100081, People's Republic of China.
authors.forename: Jianquan
authors.initials: J
authors.lastname: Wang
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, QingHua East Road, Haidian District, Beijing, 100083, People's Republic of China.
authors.forename: Chunqian
authors.initials: C
authors.lastname: Zhang
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, QingHua East Road, Haidian District, Beijing, 100083, People's Republic of China.
authors.forename: Zhi
authors.initials: Z
authors.lastname: Liu
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, QingHua East Road, Haidian District, Beijing, 100083, People's Republic of China.
authors.forename: Yuhua
authors.initials: Y
authors.lastname: Zuo
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, QingHua East Road, Haidian District, Beijing, 100083, People's Republic of China.
authors.forename: Jun
authors.initials: J
authors.lastname: Zheng
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, QingHua East Road, Haidian District, Beijing, 100083, People's Republic of China.
authors.forename: Chunlai
authors.initials: C
authors.lastname: Xue
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, QingHua East Road, Haidian District, Beijing, 100083, People's Republic of China.
authors.forename: Chuanbo
authors.initials: C
authors.lastname: Li
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, QingHua East Road, Haidian District, Beijing, 100083, People's Republic of China.
authors.forename: Buwen
authors.initials: B
authors.lastname: Cheng
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, QingHua East Road, Haidian District, Beijing, 100083, People's Republic of China.
authors.forename: Qiming
authors.initials: Q
authors.lastname: Wang
keywords: Horizontal transfer; Photoconductive performance; Si nanowires