title: Surface acoustic wave ammonia sensor based on ZnO/SiO2 composite film.
abstract: A surface acoustic wave (SAW) resonator with ZnO/SiO2 (ZS) composite film was used as an ammonia sensor in this study. ZS composite films were deposited on the surface of SAW devices using the sol-gel method, and were characterized using SEM, AFM, and XRD. The performance of the sensors under ammonia gas was optimized by adjusting the molar ratio of ZnO:SiO2 to 1:1, 1:2 and 1:3, and the sensor with the ratio of ZnO to SiO2 equaling to 1:2 was found to have the best performance. The response of sensor was 1.132 kHz under 10 ppm NH3, which was much higher than that of the sensor based on a pristine ZnO film. Moreover, the sensor has good selectivity, reversibility and stability at room temperature. These can be attributed to the enhanced absorption of ammonia and unique surface reaction on composite films due to the existence of silica.
authors.affiliation: Institute of Fundamental and Frontier Sciences and School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China.
authors.forename: Shuang-Yue
authors.initials: SY
authors.lastname: Wang
authors.affiliation: Sichuan Institute of Piezoelectric and Acousto-Optic Technology, Chongqing 400060, PR China.
authors.forename: Jin-Yi
authors.initials: JY
authors.lastname: Ma
authors.affiliation: Institute of Fundamental and Frontier Sciences and School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China.
authors.forename: Zhi-Jie
authors.initials: ZJ
authors.lastname: Li
authors.affiliation: Advanced Materials Research Institute, University of New Orleans, LA 70148, USA.
authors.forename: H Q
authors.initials: HQ
authors.lastname: Su
authors.affiliation: Advanced Materials Research Institute, University of New Orleans, LA 70148, USA.
authors.forename: N R
authors.initials: NR
authors.lastname: Alkurd
authors.affiliation: Advanced Materials Research Institute, University of New Orleans, LA 70148, USA.
authors.forename: Wei-Lie
authors.initials: WL
authors.lastname: Zhou
authors.affiliation: Sichuan Institute of Piezoelectric and Acousto-Optic Technology, Chongqing 400060, PR China.
authors.forename: Lu
authors.initials: L
authors.lastname: Wang
authors.affiliation: Sichuan Institute of Piezoelectric and Acousto-Optic Technology, Chongqing 400060, PR China.
authors.forename: Bo
authors.initials: B
authors.lastname: Du
authors.affiliation: Institute of Fundamental and Frontier Sciences and School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China.
authors.forename: Yong-Liang
authors.initials: YL
authors.lastname: Tang
authors.affiliation: Institute of Fundamental and Frontier Sciences and School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China.
authors.forename: Dong-Yi
authors.initials: DY
authors.lastname: Ao
authors.affiliation: Institute of Fundamental and Frontier Sciences and School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China.
authors.forename: Shou-Chao
authors.initials: SC
authors.lastname: Zhang
authors.affiliation: Ingram School of Engineering, and Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, TX 78666, USA.
authors.forename: Q K
authors.initials: QK
authors.lastname: Yu
authors.affiliation: Institute of Fundamental and Frontier Sciences and School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China. Electronic address: xtzu@uestc.edu.cn.
authors.forename: Xiao-Tao
authors.initials: XT
authors.lastname: Zu
mesh_terms: D000641:Ammonia / Q000032:analysis* / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry*; D013016:Sound; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D012822:Silicon Dioxide; D000641:Ammonia; D015034:Zinc Oxide
keywords: Composite film; NH(3) gas sensor; SAW; SiO(2); ZnO