title: Optoelectronic memory using two-dimensional materials.
abstract: An atomically thin optoelectronic memory array for image sensing is demonstrated with layered CuIn7Se11 and extended to InSe and MoS2 atomic layers. Photogenerated charge carriers are trapped and subsequently retrieved from the potential well formed by gating a 2D material with Schottky barriers. The atomically thin layered optoelectronic memory can accumulate photon-generated charges during light exposure, and the charges can be read out later for data processing and permanent storage. An array of atomically thin image memory pixels was built to illustrate the potential of fabricating large-scale 2D material-based image sensors for image capture and storage.
authors.affiliation: Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States.
authors.forename: Sidong
authors.initials: S
authors.lastname: Lei
authors.forename: Fangfang
authors.initials: F
authors.lastname: Wen
authors.forename: Bo
authors.initials: B
authors.lastname: Li
authors.forename: Qizhong
authors.initials: Q
authors.lastname: Wang
authors.forename: Yihan
authors.initials: Y
authors.lastname: Huang
authors.forename: Yongji
authors.initials: Y
authors.lastname: Gong
authors.forename: Yongmin
authors.initials: Y
authors.lastname: He
authors.forename: Pei
authors.initials: P
authors.lastname: Dong
authors.forename: James
authors.initials: J
authors.lastname: Bellah
authors.forename: Antony
authors.initials: A
authors.lastname: George
authors.forename: Liehui
authors.initials: L
authors.lastname: Ge
authors.forename: Jun
authors.initials: J
authors.lastname: Lou
authors.forename: Naomi J
authors.initials: NJ
authors.lastname: Halas
authors.forename: Robert
authors.initials: R
authors.lastname: Vajtai
authors.forename: Pulickel M
authors.initials: PM
authors.lastname: Ajayan
keywords: 2D image sensor; 2D optoelectronic memory; Cu−In−Se; InSe; MoS2; trapping states