title: All-electrical deterministic single domain wall generation for on-chip applications.
abstract: Controlling domain wall (DW) generation and dynamics behaviour in ferromagnetic nanowire is critical to the engineering of domain wall-based non-volatile logic and magnetic memory devices. Previous research showed that DW generation suffered from a random or stochastic nature and that makes the realization of DW based device a challenging task. Conventionally, stabilizing a Néel DW requires a long pulsed current and the assistance of an external magnetic field. Here, we demonstrate a method to deterministically produce single DW without having to compromise the pulse duration. No external field is required to stabilize the DW. This is achieved by controlling the stray field magnetostatic interaction between a current-carrying strip line generated DW and the edge of the nanowire. The natural edge-field assisted domain wall generation process was found to be twice as fast as the conventional methods and requires less current density. Such deterministic DW generation method could potentially bring DW device technology, a step closer to on-chip application.
authors.affiliation: School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371.
authors.forename: Chinkhanlun
authors.initials: C
authors.lastname: Guite
authors.affiliation: School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371.
authors.forename: I S
authors.initials: IS
authors.lastname: Kerk
authors.affiliation: School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371.
authors.forename: M
authors.initials: M
authors.lastname: Chandra Sekhar
authors.affiliation: School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371.
authors.forename: M
authors.initials: M
authors.lastname: Ramu
authors.affiliation: School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371.
authors.forename: S
authors.initials: S
authors.lastname: Goolaup
authors.affiliation: School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371.
authors.forename: W S
authors.initials: WS
authors.lastname: Lew