title: Statistical contact angle analyses; "slow moving" drops on a horizontal silicon-oxide surface.
abstract: Sessile drop experiments on horizontal surfaces are commonly used to characterise surface properties in science and in industry. The advancing angle and the receding angle are measurable on every solid. Specially on horizontal surfaces even the notions themselves are critically questioned by some authors. Building a standard, reproducible and valid method of measuring and defining specific (advancing/receding) contact angles is an important challenge of surface science. Recently we have developed two/three approaches, by sigmoid fitting, by independent and by dependent statistical analyses, which are practicable for the determination of specific angles/slopes if inclining the sample surface. These approaches lead to contact angle data which are independent on "user-skills" and subjectivity of the operator which is also of urgent need to evaluate dynamic measurements of contact angles. We will show in this contribution that the slightly modified procedures are also applicable to find specific angles for experiments on horizontal surfaces. As an example droplets on a flat freshly cleaned silicon-oxide surface (wafer) are dynamically measured by sessile drop technique while the volume of the liquid is increased/decreased. The triple points, the time, the contact angles during the advancing and the receding of the drop obtained by high-precision drop shape analysis are statistically analysed. As stated in the previous contribution the procedure is called "slow movement" analysis due to the small covered distance and the dominance of data points with low velocity. Even smallest variations in velocity such as the minimal advancing motion during the withdrawing of the liquid are identifiable which confirms the flatness and the chemical homogeneity of the sample surface and the high sensitivity of the presented approaches.
authors.affiliation: Physical Chemistry, Saarland University, Campus B 2 2, 66123 Saarbrücken, Germany. Electronic address: mic.schmitt@mx.uni-saarland.de.
authors.forename: M
authors.initials: M
authors.lastname: Schmitt
authors.affiliation: Physical Chemistry, Saarland University, Campus B 2 2, 66123 Saarbrücken, Germany. Electronic address: s9jugrub@stud.uni-saarland.de.
authors.forename: J
authors.initials: J
authors.lastname: Grub
authors.affiliation: Physical Chemistry, Saarland University, Campus B 2 2, 66123 Saarbrücken, Germany. Electronic address: f.heib@mx.uni-saarland.de.
authors.forename: F
authors.initials: F
authors.lastname: Heib
keywords: Contact angle; Horizontal; Sessile drop; Silicon wafer surface; Statistical analysis