title: Topological Crystalline Insulator Pb1-x Snx Se Nanowires with {100} Facets.
abstract: Surface states properties of topological crystalline insulator Pb1-x Snx Se are strongly dependent on crystallographic plane orientation. Rectangular prismatic Pbx Sn1-x Se nanowires and nanoplates are grown with distinct {100} surfaces on mica sheets. Substrate surface chemical properties are found to be the critical factors that affect the vapor deposition process and final shapes of Pb1-x Snx Se nanostructures.
authors.affiliation: National Center for Nanscience and Technology, Beijing, China.
authors.forename: Qisheng
authors.initials: Q
authors.lastname: Wang
authors.forename: Muhammad
authors.initials: M
authors.lastname: Safdar
authors.forename: Zhenxing
authors.initials: Z
authors.lastname: Wang
authors.forename: Xueying
authors.initials: X
authors.lastname: Zhan
authors.forename: Kai
authors.initials: K
authors.lastname: Xu
authors.forename: Fengmei
authors.initials: F
authors.lastname: Wang
authors.forename: Jun
authors.initials: J
authors.lastname: He
keywords: Pb1-xSnxSe nanowires; substrate surface chemistry; topological insulators; vapor deposition growth