title: Reversible switching of magnetic states by electric fields in nitrogenized-divacancies graphene decorated by tungsten atoms.
abstract: Magnetic graphene-based materials have shown great potential for developing high-performance electronic devices at sub-nanometer such as spintronic data storage units. However, a significant reduction of power consumption and great improvement of structural stability are needed before they can be used for actual applications. Based on the first-principles calculations, here we demonstrate that the interaction between tungsten atoms and nitrogenized-divacancies (NDVs) in the hybrid W@NDV-graphene can lead to high stability and large magnetic anisotropy energy (MAE). More importantly, reversible switching between different magnetic states can be implemented by tuning the MAE under different electric fields, and very low energy is consumed during the switching. Such controllable switching of magnetic states is ascribed to the competition between the tensile stain and orbital magnetic anisotropy, which originates from the change in the occupation number of W-5d orbitals under the electric fields. Our results provide a promising avenue for developing high-density magnetic storage units or multi-state logical switching devices with ultralow power at sub-nanometer.
authors.affiliation: 1] National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China [2] Key Laboratory of Ecophysics and Department of Physics, College of Science, Shihezi University, Xinjiang 832003, China.
authors.forename: Gui-Xian
authors.initials: GX
authors.lastname: Ge
authors.forename: Hai-Bin
authors.initials: HB
authors.lastname: Sun
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China.
authors.forename: Hai-Bing
authors.initials: HB
authors.lastname: Sun
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Han
authors.affiliation: 1] National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Feng-Qi
authors.initials: FQ
authors.lastname: Song
authors.affiliation: Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
authors.forename: Ji-Jun
authors.initials: JJ
authors.lastname: Zhao
authors.affiliation: 1] National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Guang-Hou
authors.initials: GH
authors.lastname: Wang
authors.affiliation: 1] National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Jian-Guo
authors.initials: JG
authors.lastname: Wan