title: Gateless patterning of epitaxial graphene by local intercalation.
abstract: We present a technique to pattern the charge density of a large-area epitaxial graphene sheet locally without using metallic gates. Instead, local intercalation of the graphene-substrate interface can selectively be established in the vicinity of graphene edges or predefined voids. It provides changes of the work function of several hundred meV, corresponding to a conversion from n-type to p-type charge carriers. This assignment is supported by photoelectron spectroscopy, scanning tunneling microscopy, scanning electron microscopy and Hall effect measurements. The technique introduces materials contrast to a graphene sheet in a variety of geometries and thus allows for novel experiments and novel functionalities.
authors.affiliation: Lehrstuhl für Angewandte Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058 Erlangen, Germany.
authors.forename: C
authors.initials: C
authors.lastname: Sorger
authors.forename: S
authors.initials: S
authors.lastname: Hertel
authors.forename: J
authors.initials: J
authors.lastname: Jobst
authors.forename: C
authors.initials: C
authors.lastname: Steiner
authors.forename: K
authors.initials: K
authors.lastname: Meil
authors.forename: K
authors.initials: K
authors.lastname: Ullmann
authors.forename: A
authors.initials: A
authors.lastname: Albert
authors.forename: Y
authors.initials: Y
authors.lastname: Wang
authors.forename: M
authors.initials: M
authors.lastname: Krieger
authors.forename: J
authors.initials: J
authors.lastname: Ristein
authors.forename: S
authors.initials: S
authors.lastname: Maier
authors.forename: H B
authors.initials: HB
authors.lastname: Weber