title: Size-dependent energy levels of InSb quantum dots measured by scanning tunneling spectroscopy.
abstract: The electronic structure of single InSb quantum dots (QDs) with diameters between 3 and 7 nm was investigated using atomic force microscopy (AFM) and scanning tunneling spectroscopy (STS). In this size regime, InSb QDs show strong quantum confinement effects which lead to discrete energy levels on both valence and conduction band states. Decrease of the QD size increases the measured band gap and the spacing between energy levels. Multiplets of equally spaced resonance peaks are observed in the tunneling spectra. There, multiplets originate from degeneracy lifting induced by QD charging. The tunneling spectra of InSb QDs are qualitatively different from those observed in the STS of other III-V materials, for example, InAs QDs, with similar band gap energy. Theoretical calculations suggest the electron tunneling occurs through the states connected with L-valley of InSb QDs rather than through states of the Γ-valley. This observation calls for better understanding of the role of indirect valleys in strongly quantum-confined III-V nanomaterials.
authors.affiliation: The James Franck Institute and Department of Chemistry, The University of Chicago , Chicago, Illinois 60637, United States.
authors.forename: Tuo
authors.initials: T
authors.lastname: Wang
authors.forename: Roman
authors.initials: R
authors.lastname: Vaxenburg
authors.forename: Wenyong
authors.initials: W
authors.lastname: Liu
authors.forename: Sara M
authors.initials: SM
authors.lastname: Rupich
authors.forename: Efrat
authors.initials: E
authors.lastname: Lifshitz
authors.forename: Alexander L
authors.initials: AL
authors.lastname: Efros
authors.forename: Dmitri V
authors.initials: DV
authors.lastname: Talapin
authors.forename: S J
authors.initials: SJ
authors.lastname: Sibener
keywords: InSb; electron tunneling; electronic structure; quantum dots; scanning tunneling spectroscopy