title: Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization.
abstract: A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The effect of UV illumination on the I-V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V) under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.
authors.affiliation: Nanotechnology Research Laboratory, Centre of Nanoscience and Engineering, Maulana Azad National Institute of Technology, Bhopal 462051, India.
authors.forename: Vinay
authors.initials: V
authors.lastname: Kabra
authors.affiliation: Nanotechnology Research Laboratory, Centre of Nanoscience and Engineering, Maulana Azad National Institute of Technology, Bhopal 462051, India.
authors.forename: Lubna
authors.initials: L
authors.lastname: Aamir
authors.affiliation: Nanotechnology Research Laboratory, Centre of Nanoscience and Engineering, Maulana Azad National Institute of Technology, Bhopal 462051, India.
authors.forename: M M
authors.initials: MM
authors.lastname: Malik
keywords: UV illumination; capacitance–voltage measurements; current–voltage measurement; solution-processed rectifying p-ZnO/n-Si heterojunction diode