title: Switching the charge state of individual surface atoms at Si(111)-√3 × √3:B surfaces.
abstract: We show that each surface atom of heavily boron-doped, (111)-oriented silicon with a √3 × √3 reconstruction has electrically switchable two charge states due to the strong electron-lattice coupling at this surface. The structural and electronic properties of the two charge states as well as their energetics are uncovered by employing scanning tunneling microscopy measurements and density functional theory calculations, which reveals that one of the two is a two-electron bound state or surface bipolaron. We also execute the single-atom bit operations on individual surface atoms by controlling their charge states while demonstrating implementation of the atomic scale memory at a silicon surface with an unprecedented recording density.
authors.affiliation: Korea Research Institute of Standards and Science , Yuseong, Daejeon 305-340, Republic of Korea.
authors.forename: Daejin
authors.initials: D
authors.lastname: Eom
authors.forename: Chang-Youn
authors.initials: CY
authors.lastname: Moon
authors.forename: Ja-Yong
authors.initials: JY
authors.lastname: Koo
keywords: Si(111); bipolaron; bistability; boron; single atom memory; two-electron bound state