title: Stable self-compliance resistive switching in AlOδ/Ta2O(5-x)/TaOy triple layer devices.
abstract: Stable self-compliance property was observed in the AlOδ/Ta2O(5-x)/TaOy triple-layer resistive random access memory structure. The impact of AlOδ barrier layer was studied with different thicknesses. Endurance of more than 10(10) cycles and data retention for more than 3 h at 125 °C were demonstrated. All the measurements were carried out without external current compliance and no hard breakdown was observed. Systematic analysis reveals the self-compliance property is due to the built-in series resistance of the thin AlOδ barrier layer. A model is proposed to explain this self-compliance property.
authors.affiliation: Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China. Tsinghua National Laboratory for Information Science and Technology (TNList), Beijing 100084, People's Republic of China.
authors.forename: Huaqiang
authors.initials: H
authors.lastname: Wu
authors.forename: Xinyi
authors.initials: X
authors.lastname: Li
authors.forename: Feiyang
authors.initials: F
authors.lastname: Huang
authors.forename: An
authors.initials: A
authors.lastname: Chen
authors.forename: Zhiping
authors.initials: Z
authors.lastname: Yu
authors.forename: He
authors.initials: H
authors.lastname: Qian