title: Enhanced environmental stability induced by effective polarization of a polar dielectric layer in a trilayer dielectric system of organic field-effect transistors: a quantitative study.
abstract: We report a concept fabrication method that helps to improve the performance and stability of copper phthalocyanine (CuPc) based organic field-effect transistors (OFETs) in ambient. The devices were fabricated using a trilayer dielectric system that contains a bilayer polymer dielectrics consisting of a hydrophobic thin layer of poly(methyl methacrylate) (PMMA) on poly(vinyl alcohol) (PVA) or poly(4-vinylphenol) (PVP) or polystyrene (PS) with Al2O3 as a third layer. We have explored the peculiarities in the device performance (i.e., superior performance under ambient humidity), which are caused due to the polarization of dipoles residing in the polar dielectric material. The anomalous behavior of the bias-stress measured under vacuum has been explained successfully by a stretched exponential function modified by adding a time dependent dipole polarization term. The OFET with a dielectric layer of PVA or PVP containing hydroxyl groups has shown enhanced characteristics and remains highly stable without any degradation even after 300 days in ambient with three times enhancement in carrier mobility (0.015 cm(2)·V(-1)·s(-1)) compared to vacuum. This has been attributed to the enhanced polarization of hydroxyl groups in the presence of absorbed water molecules at the CuPc/PMMA interface. In addition, a model has been proposed based on the polarization of hydroxyl groups to explain the enhanced stability in these devices. We believe that this general method using a trilayer dielectric system can be extended to fabricate other OFETs with materials that are known to show high performances under vacuum but degrade under ambient conditions.
authors.affiliation: Center for Nanotechnology, ‡Department of Physics, §Department of Chemistry, Indian Institute of Technology Guwahati , Guwahati-781039, India.
authors.forename: Nimmakayala V V
authors.initials: NV
authors.lastname: Subbarao
authors.forename: Murali
authors.initials: M
authors.lastname: Gedda
authors.forename: Parameswar K
authors.initials: PK
authors.lastname: Iyer
authors.forename: Dipak K
authors.initials: DK
authors.lastname: Goswami
keywords: anomalous bias stress; bilayer dielectric; dipole relaxation; hysteresis; organic field-effect transistor; stretched exponential function