title: Skyrmion-skyrmion and skyrmion-edge repulsions in skyrmion-based racetrack memory.
abstract: Magnetic skyrmions are promising for building next-generation magnetic memories and spintronic devices due to their stability, small size and the extremely low currents needed to move them. In particular, skyrmion-based racetrack memory is attractive for information technology, where skyrmions are used to store information as data bits instead of traditional domain walls. Here we numerically demonstrate the impacts of skyrmion-skyrmion and skyrmion-edge repulsions on the feasibility of skyrmion-based racetrack memory. The reliable and practicable spacing between consecutive skyrmionic bits on the racetrack as well as the ability to adjust it are investigated. Clogging of skyrmionic bits is found at the end of the racetrack, leading to the reduction of skyrmion size. Further, we demonstrate an effective and simple method to avoid the clogging of skyrmionic bits, which ensures the elimination of skyrmionic bits beyond the reading element. Our results give guidance for the design and development of future skyrmion-based racetrack memory.
authors.affiliation: College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, China.
authors.forename: Xichao
authors.initials: X
authors.lastname: Zhang
authors.affiliation: 1] College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, China [2] Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology &Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
authors.forename: G P
authors.initials: GP
authors.lastname: Zhao
authors.affiliation: Engineering and the Environment, University of Southampton, Southampton SO17 1BJ, United Kingdom.
authors.forename: Hans
authors.initials: H
authors.lastname: Fangohr
authors.affiliation: 1] Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology &Engineering, Chinese Academy of Sciences, Ningbo 315201, China [2] Department of Physics, University of Texas at Arlington, Arlington, Texas 76019, USA.
authors.forename: J Ping
authors.initials: JP
authors.lastname: Liu
authors.affiliation: Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology &Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
authors.forename: W X
authors.initials: WX
authors.lastname: Xia
authors.affiliation: College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, China.
authors.forename: J
authors.initials: J
authors.lastname: Xia
authors.affiliation: College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, China.
authors.forename: F J
authors.initials: FJ
authors.lastname: Morvan