title: Quantum valley Hall states and topological transitions in Pt(Ni, Pd)-decorated silicene: a first-principles study.
abstract: The electronic states and topological behaviors of Pt(Ni, Pd)-decorated silicene are investigated by using an ab-initio method. All the three kinds of the adatoms prefer hollow sites of the silicene, guaranteeing the Dirac cones unbroken. The Pt(Ni, Pd)-decorated silicene systems all present quantum valley Hall (QVH) states with the gap opened exactly at the Fermi level. The gaps of the QVH states can be increased substantially by applying a positive electric field. Very fascinating phase transitions from QVH to quantum spin Hall (QSH) and then to QVH again are achieved in the Pt/Ni-decorated silicene when a negative electric field is applied. The QSH state in the Pd case with a negative electric field is, however, quenched because of relatively larger Rashba spin-orbit coupling (SOC) than the intrinsic SOC in the system. Our findings may be useful for the applications of silicene-based devices in valleytronics and spintronics.
authors.affiliation: State Key Laboratory of Surface Physics and Key Laboratory for Computational Physical Sciences (MOE) and Department of Physics, Fudan University, Shanghai 200433, China.
authors.forename: Bao
authors.initials: B
authors.lastname: Zhao
authors.affiliation: State Key Laboratory of Surface Physics and Key Laboratory for Computational Physical Sciences (MOE) and Department of Physics, Fudan University, Shanghai 200433, China.
authors.forename: Jiayong
authors.initials: J
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Surface Physics and Key Laboratory for Computational Physical Sciences (MOE) and Department of Physics, Fudan University, Shanghai 200433, China.
authors.forename: Yicheng
authors.initials: Y
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Surface Physics and Key Laboratory for Computational Physical Sciences (MOE) and Department of Physics, Fudan University, Shanghai 200433, China.
authors.forename: Zhongqin
authors.initials: Z
authors.lastname: Yang