title: Dislocation-induced nanoparticle decoration on a GaN nanowire.
abstract: GaN nanowires with homoepitaxial decorated GaN nanoparticles on their surface along the radial direction have been synthesized by means of a chemical vapor deposition method. The growth of GaN nanowires is catalyzed by Au particles via the vapor-liquid-solid (VLS) mechanism. Screw dislocations are generated along the radial direction of the nanowires under slight Zn doping. In contrast to the metal-catalyst-assisted VLS growth, GaN nanoparticles are found to prefer to nucleate and grow at these dislocation sites. High-resolution transmission electron microscopy (HRTEM) analysis demonstrates that the GaN nanoparticles possess two types of epitaxial orientation with respect to the corresponding GaN nanowire: (I) [1̅21̅0]np//[1̅21̅0]nw, (0001)np//(0001)nw; (II) [1̅21̅3]np//[12̅10]nw, (101̅0)np//(101̅0)nw. An increased Ga signal in the energy-dispersive spectroscopy (EDS) profile lines of the nanowires suggests GaN nanoparticle growth at the edge surface of the wires. All the crystallographic results confirm the importance of the dislocations with respect to the homoepitaxial growth of the GaN nanoparticles. Here, screw dislocations situated on the (0001) plane provide the self-step source to enable nucleation of the GaN nanoparticles.
authors.affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , No. 72 Wenhua Road, Shenyang 110016, China.
authors.forename: Bing
authors.initials: B
authors.lastname: Yang
authors.forename: Fang
authors.initials: F
authors.lastname: Yuan
authors.forename: Qingyun
authors.initials: Q
authors.lastname: Liu
authors.forename: Nan
authors.initials: N
authors.lastname: Huang
authors.forename: Jianhang
authors.initials: J
authors.lastname: Qiu
authors.forename: Thorsten
authors.initials: T
authors.lastname: Staedler
authors.forename: Baodan
authors.initials: B
authors.lastname: Liu
authors.forename: Xin
authors.initials: X
authors.lastname: Jiang
keywords: GaN; dislocation; growth; nanostructures; nucleation