title: Optically transparent thin-film transistors based on 2D multilayer MoS₂ and indium zinc oxide electrodes.
abstract: We report on optically transparent thin film transistors (TFTs) fabricated using multilayered molybdenum disulfide (MoS2) as the active channel, indium tin oxide (ITO) for the back-gated electrode and indium zinc oxide (IZO) for the source/drain electrodes, respectively, which showed more than 81% transmittance in the visible wavelength. In spite of a relatively large Schottky barrier between MoS2 and IZO, the n-type behavior with a field-effect mobility (μ(eff)) of 1.4 cm(2) V(-1) s(-1) was observed in as-fabricated transparent MoS2 TFT. In order to enhance the performances of transparent MoS2 TFTs, a picosecond pulsed laser was selectively irradiated onto the contact region of the IZO electrodes. Following laser annealing, μ(eff) increased to 4.5 cm(2) V(-1) s(-1), and the on-off current ratio (I(on)/I(off)) increased to 10(4), which were attributed to the reduction of the contact resistance between MoS2 and IZO.
authors.affiliation: Multi-Functional Bio/Nano Lab., Kyung Hee University, Gyeonggi 446-701, Korea.
authors.forename: Junyeon
authors.initials: J
authors.lastname: Kwon
authors.forename: Young Ki
authors.initials: YK
authors.lastname: Hong
authors.forename: Hyuk-Jun
authors.initials: HJ
authors.lastname: Kwon
authors.forename: Yu Jin
authors.initials: YJ
authors.lastname: Park
authors.forename: Byungwook
authors.initials: B
authors.lastname: Yoo
authors.forename: Jiwan
authors.initials: J
authors.lastname: Kim
authors.forename: Costas P
authors.initials: CP
authors.lastname: Grigoropoulos
authors.forename: Min Suk
authors.initials: MS
authors.lastname: Oh
authors.forename: Sunkook
authors.initials: S
authors.lastname: Kim