title: Performance potential and limit of MoS2 transistors.
abstract: High-performance MoS2 transistors scaled down to 100 nm are studied at various temperatures down to 20 K, where a highest drive current of 800 μA μm(-1) can be achieved. Extremely low electrical noise of 2.8 × 10(-10) μm(2) Hz(-1) at 10 Hz is also achieved at room temperature. Furthermore, a negative differential resistance behavior is experimentally observed and its origin of self-heating is identified using pulsed-current-voltage measurements.
authors.affiliation: Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China.
authors.forename: Xuefei
authors.initials: X
authors.lastname: Li
authors.forename: Lingming
authors.initials: L
authors.lastname: Yang
authors.forename: Mengwei
authors.initials: M
authors.lastname: Si
authors.forename: Sichao
authors.initials: S
authors.lastname: Li
authors.forename: Mingqiang
authors.initials: M
authors.lastname: Huang
authors.forename: Peide
authors.initials: P
authors.lastname: Ye
authors.forename: Yanqing
authors.initials: Y
authors.lastname: Wu
keywords: MoS2; low frequency noise; negative differential resistance; pulsed IV; transistor