title: Segregation of In to dislocations in InGaN.
abstract: Dislocations are one-dimensional topological defects that occur frequently in functional thin film materials and that are known to degrade the performance of InxGa1-xN-based optoelectronic devices. Here, we show that large local deviations in alloy composition and atomic structure are expected to occur in and around dislocation cores in InxGa(1-x)N alloy thin films. We present energy-dispersive X-ray spectroscopy data supporting this result. The methods presented here are also widely applicable for predicting composition fluctuations associated with strain fields in other inorganic functional material thin films.
authors.affiliation: Department of Materials, Imperial College London , Exhibition Road, London SW7 2AZ, United Kingdom.
authors.forename: Matthew K
authors.initials: MK
authors.lastname: Horton
authors.forename: Sneha
authors.initials: S
authors.lastname: Rhode
authors.forename: Suman-Lata
authors.initials: SL
authors.lastname: Sahonta
authors.forename: Menno J
authors.initials: MJ
authors.lastname: Kappers
authors.forename: Sarah J
authors.initials: SJ
authors.lastname: Haigh
authors.forename: Timothy J
authors.initials: TJ
authors.lastname: Pennycook
authors.forename: Colin J
authors.initials: CJ
authors.lastname: Humphreys
authors.forename: Rajiv O
authors.initials: RO
authors.lastname: Dusane
authors.forename: Michelle A
authors.initials: MA
authors.lastname: Moram
mesh_terms: D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D017348:Microscopy, Electron, Scanning Transmission; D009584:Nitrogen / Q000737:chemistry*; D013052:Spectrometry, X-Ray Emission
chemical_list: D007204:Indium; D005708:Gallium; D009584:Nitrogen
keywords: Dislocations; III-nitrides; Monte Carlo; STEM-EDX; alloy segregation; atomistic modeling