title: Controlled doping of large-area trilayer MoS2 with molecular reductants and oxidants.
abstract: Highly uniform large-area MoS2 is chemically doped using molecular reductants and oxidants. Electrical measurements, photoemission, and Raman spectroscopy are used to study the doping effect and to understand the underlying mechanism. Strong work-function changes of up to ±1 eV can be achieved, with contributions from state filling and surface dipoles. This results in high doping densities of up to ca. 8 × 10(12) cm(-2) .
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
authors.forename: Alexey
authors.initials: A
authors.lastname: Tarasov
authors.forename: Siyuan
authors.initials: S
authors.lastname: Zhang
authors.forename: Meng-Yen
authors.initials: MY
authors.lastname: Tsai
authors.forename: Philip M
authors.initials: PM
authors.lastname: Campbell
authors.forename: Samuel
authors.initials: S
authors.lastname: Graham
authors.forename: Stephen
authors.initials: S
authors.lastname: Barlow
authors.forename: Seth R
authors.initials: SR
authors.lastname: Marder
authors.forename: Eric M
authors.initials: EM
authors.lastname: Vogel
keywords: 2D materials; chemical doping; field-effect transistors; molybdenum disulfide; redox-active species