title: Engineering the carrier dynamics of InGaN nanowire white light-emitting diodes by distributed p-AlGaN electron blocking layers.
abstract: We report on the demonstration of a new type of axial nanowire LED heterostructures, with the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large bandgap AlGaN shell is spontaneously formed on the sidewall of the nanowire during the growth of AlGaN barrier of the quantum dot active region. As such, nonradiative surface recombination, that dominates the carrier dynamics of conventional axial nanowire LED structures, can be largely eliminated, leading to significantly increased carrier lifetime from ~0.3 ns to 4.5 ns. The luminescence emission is also enhanced by orders of magnitude. Moreover, the p-doped AlGaN barrier layers can function as distributed electron blocking layers (EBLs), which is found to be more effective in reducing electron overflow, compared to the conventional AlGaN EBL. The device displays strong white-light emission, with a color rendering index of ~95. An output power of >5 mW is measured for a 1 mm × 1 mm device, which is more than 500 times stronger than the conventional InGaN axial nanowire LEDs without AlGaN distributed EBLs.
authors.affiliation: 1] Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada [2] Department of Electrical and Computer Engineering, New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102.
authors.forename: Hieu Pham Trung
authors.initials: HP
authors.lastname: Nguyen
authors.affiliation: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: Mehrdad
authors.initials: M
authors.lastname: Djavid
authors.affiliation: Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy and Brockhouse Institute for Materials Research, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 Canada.
authors.forename: Steffi Y
authors.initials: SY
authors.lastname: Woo
authors.affiliation: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: Xianhe
authors.initials: X
authors.lastname: Liu
authors.affiliation: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: Ashfiqua T
authors.initials: AT
authors.lastname: Connie
authors.affiliation: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: Sharif
authors.initials: S
authors.lastname: Sadaf
authors.affiliation: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: Qi
authors.initials: Q
authors.lastname: Wang
authors.affiliation: Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy and Brockhouse Institute for Materials Research, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 Canada.
authors.forename: Gianluigi A
authors.initials: GA
authors.lastname: Botton
authors.affiliation: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: Ishiang
authors.initials: I
authors.lastname: Shih
authors.affiliation: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: Zetian
authors.initials: Z
authors.lastname: Mi