title: Engineering two-dimensional superconductivity and Rashba spin-orbit coupling in LaAlO₃/SrTiO₃ quantum wells by selective orbital occupancy.
abstract: The discovery of two-dimensional electron gases (2DEGs) at oxide interfaces-involving electrons in narrow d-bands-has broken new ground, enabling the access to correlated states that are unreachable in conventional semiconductors based on s- and p- electrons. There is a growing consensus that emerging properties at these novel quantum wells-such as 2D superconductivity and magnetism-are intimately connected to specific orbital symmetries in the 2DEG sub-band structure. Here we show that crystal orientation allows selective orbital occupancy, disclosing unprecedented ways to tailor the 2DEG properties. By carrying out electrostatic gating experiments in LaAlO3/SrTiO3 wells of different crystal orientations, we show that the spatial extension and anisotropy of the 2D superconductivity and the Rashba spin-orbit field can be largely modulated by controlling the 2DEG sub-band filling. Such an orientational tuning expands the possibilities for electronic engineering of 2DEGs at LaAlO3/SrTiO3 interfaces.
authors.affiliation: Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Catalonia, Spain.
authors.forename: Gervasi
authors.initials: G
authors.lastname: Herranz
authors.affiliation: LPEM-UMR8213/CNRS-ESPCI ParisTech-UPMC, PSL University, 10 rue Vauquelin, 75005 Paris, France.
authors.forename: Gyanendra
authors.initials: G
authors.lastname: Singh
authors.affiliation: LPEM-UMR8213/CNRS-ESPCI ParisTech-UPMC, PSL University, 10 rue Vauquelin, 75005 Paris, France.
authors.forename: Nicolas
authors.initials: N
authors.lastname: Bergeal
authors.affiliation: LPEM-UMR8213/CNRS-ESPCI ParisTech-UPMC, PSL University, 10 rue Vauquelin, 75005 Paris, France.
authors.forename: Alexis
authors.initials: A
authors.lastname: Jouan
authors.affiliation: LPEM-UMR8213/CNRS-ESPCI ParisTech-UPMC, PSL University, 10 rue Vauquelin, 75005 Paris, France.
authors.forename: Jérôme
authors.initials: J
authors.lastname: Lesueur
authors.affiliation: Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Catalonia, Spain.
authors.forename: Jaume
authors.initials: J
authors.lastname: Gázquez
authors.affiliation: 1] Materials Science &Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [2] GFMC, Department de Fisica Aplicada III &Instituto Pluridisciplinar, Universidad Complutense de Madrid, 28040 Madrid, Spain.
authors.forename: María
authors.initials: M
authors.lastname: Varela
authors.affiliation: 1] Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Catalonia, Spain [2] Departament de Física, Universitat Autònoma de Barcelona, E-08193 Bellaterra, Barcelona, Catalonia, Spain.
authors.forename: Mateusz
authors.initials: M
authors.lastname: Scigaj
authors.affiliation: Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Catalonia, Spain.
authors.forename: Nico
authors.initials: N
authors.lastname: Dix
authors.affiliation: Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Catalonia, Spain.
authors.forename: Florencio
authors.initials: F
authors.lastname: Sánchez
authors.affiliation: Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Catalonia, Spain.
authors.forename: Josep
authors.initials: J
authors.lastname: Fontcuberta