title: Continuous wave blue lasing in III-nitride nanobeam cavity on silicon.
abstract: III-V photonics on silicon is an active and promising research area. Here, we demonstrate room-temperature (RT) lasing in short-wavelength III-nitride photonic crystal nanobeam cavities grown on silicon featuring a single InGaN quantum well (QW). In the low-absorption QW region, high quality factors in excess of 10(4) are measured, while RT blue lasing under continuous-wave optical pumping is reported in the high-absorption wavelength range, hence the high QW gain region. Lasing characteristics are well accounted for by the large spontaneous emission coupling factor (β > 0.8) inherent to the nanobeam geometry and the large InGaN QW material gain. Our work illustrates the high potential of III-nitrides on silicon for the realization of low power nanophotonic devices with a reduced footprint that would be of prime interest for fundamental light-matter interaction studies and a variety of lab-on-a-chip applications including biophotonics.
authors.affiliation: Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne (EPFL) , CH-1015 Lausanne, Switzerland.
authors.forename: Noelia Vico
authors.initials: NV
authors.lastname: Triviño
authors.forename: Raphaël
authors.initials: R
authors.lastname: Butté
authors.forename: Jean-François
authors.initials: JF
authors.lastname: Carlin
authors.forename: Nicolas
authors.initials: N
authors.lastname: Grandjean
keywords: III-nitrides; lasing; nanobeam; photonic crystal; short-wavelength; silicon integration