title: Dislocation luminescence in GaN single crystals under nanoindentation.
abstract: This work presents an experimental study on the dislocation luminescence in GaN by nanoindentation, cathodoluminescence, and Raman. The dislocation luminescence peaking at 3.12 eV exhibits a series of special properties in the cathodoluminescence measurements, and it completely disappears after annealing at 500°C. Raman spectroscopy shows evidence for existence of vacancies in the indented region. A comprehensive investigation encompassing cathodoluminescence, Raman, and annealing experiments allow the assignment of dislocation luminescence to conduction-band-acceptor transition involving Ga vacancies. The nanoscale plasticity of GaN can be better understood by considering the dislocation luminescence mechanism.
authors.affiliation: Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People's Republic of China.
authors.forename: Jun
authors.initials: J
authors.lastname: Huang
authors.affiliation: Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People's Republic of China ; Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, People's Republic of China.
authors.forename: Ke
authors.initials: K
authors.lastname: Xu
authors.affiliation: Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People's Republic of China.
authors.forename: Ying Min
authors.initials: YM
authors.lastname: Fan
authors.affiliation: Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People's Republic of China ; Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, People's Republic of China.
authors.forename: Jian Feng
authors.initials: JF
authors.lastname: Wang
authors.affiliation: Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People's Republic of China ; Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, People's Republic of China.
authors.forename: Ji Cai
authors.initials: JC
authors.lastname: Zhang
authors.affiliation: Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People's Republic of China ; Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, People's Republic of China.
authors.forename: Guo Qiang
authors.initials: GQ
authors.lastname: Ren
keywords: Dislocation; GaN; Luminescence; Nanoindentation