title: CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure.
abstract: Cu2ZnSnSe4 (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin. The loss of Sn from CZTSe thin films in selenization was suppressed herein using a tin source at 400°C (A2) or 530°C (A3). A copper-poor and zinc-rich CZTSe absorber layer with Cu/Sn, Zn/Sn, Cu/(Zn + Sn), and Zn/(Cu + Zn + Sn) with metallic element ratios of 1.86, 1.24, 0.83, and 0.3, respectively, was obtained in a selenization with a tin source at 530°C. The crystallized CZTSe thin film exhibited an increasingly (112)-preferred orientation at higher tin selenide (SnSe x ) partial pressure. The lack of any obvious Mo-Se phase-related diffraction peaks in the X-ray diffraction (XRD) diffraction patterns may have arisen from the low Se pressure in the selenization processes. The scanning electron microscope (SEM) images reveal a compact surface morphology and a moderate grain size. CZTSe solar cells with an efficiency of 4.81% were produced by the low-cost fabrication process that is elucidated herein.
authors.affiliation: Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 300071, People's Republic of China.
authors.forename: Liyong
authors.initials: L
authors.lastname: Yao
authors.affiliation: Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 300071, People's Republic of China.
authors.forename: Jianping
authors.initials: J
authors.lastname: Ao
authors.affiliation: Department of Electronic Engineering, Chang Gung University, 259, WenHwa 1st Road, KweiShan, 333, Taoyuan, Taiwan.
authors.forename: Ming-Jer
authors.initials: MJ
authors.lastname: Jeng
authors.affiliation: Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 300071, People's Republic of China.
authors.forename: Jinlian
authors.initials: J
authors.lastname: Bi
authors.affiliation: Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 300071, People's Republic of China.
authors.forename: Shoushuai
authors.initials: S
authors.lastname: Gao
authors.affiliation: Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 300071, People's Republic of China.
authors.forename: Qing
authors.initials: Q
authors.lastname: He
authors.affiliation: Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 300071, People's Republic of China.
authors.forename: Zhiqiang
authors.initials: Z
authors.lastname: Zhou
authors.affiliation: Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 300071, People's Republic of China.
authors.forename: Guozhong
authors.initials: G
authors.lastname: Sun
authors.affiliation: Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 300071, People's Republic of China.
authors.forename: Yun
authors.initials: Y
authors.lastname: Sun
authors.affiliation: Department of Electronic Engineering, Chang Gung University, 259, WenHwa 1st Road, KweiShan, 333, Taoyuan, Taiwan.
authors.forename: Liann-Be
authors.initials: LB
authors.lastname: Chang
authors.affiliation: Department of Electronic Engineering, Chang Gung University, 259, WenHwa 1st Road, KweiShan, 333, Taoyuan, Taiwan.
authors.forename: Jian-Wun
authors.initials: JW
authors.lastname: Chen
keywords: Cu/Sn/Zn precursors; Cu2ZnSnSe4 (CZTSe); Electrodeposition; Selenization; Solar cells