title: Directed self-assembly of silicon-containing block copolymer thin films.
abstract: The directed self-assembly (DSA) of lamella-forming poly(styrene-block-trimethylsilylstyrene) (PS-PTMSS, L0=22 nm) was achieved using a combination of tailored top interfaces and lithographically defined patterned substrates. Chemo- and grapho-epitaxy, using hydrogen silsesquioxane (HSQ) based prepatterns, achieved density multiplications up to 6× and trench space subdivisions up to 7×, respectively. These results establish the compatibility of DSA techniques with a high etch contrast, Si-containing BCP that requires a top coat neutral layer to enable orientation.
authors.affiliation: Department of Chemistry and §McKetta Department of Chemical Engineering, The University of Texas at Austin , Austin, Texas 78712, United States.
authors.forename: Michael J
authors.initials: MJ
authors.lastname: Maher
authors.forename: Charles T
authors.initials: CT
authors.lastname: Rettner
authors.forename: Christopher M
authors.initials: CM
authors.lastname: Bates
authors.forename: Gregory
authors.initials: G
authors.lastname: Blachut
authors.forename: Matthew C
authors.initials: MC
authors.lastname: Carlson
authors.forename: William J
authors.initials: WJ
authors.lastname: Durand
authors.forename: Christopher J
authors.initials: CJ
authors.lastname: Ellison
authors.forename: Daniel P
authors.initials: DP
authors.lastname: Sanders
authors.forename: Joy Y
authors.initials: JY
authors.lastname: Cheng
authors.forename: C Grant
authors.initials: CG
authors.lastname: Willson
keywords: block copolymers; chemo-epitaxy; directed self-assembly; grapho-epitaxy; lithography; top coats