title: Heterointerface engineering of broken-gap InAs/GaSb multilayer structures.
abstract: Broken-gap InAs/GaSb strain balanced multilayer structures were grown by molecular beam epitaxy (MBE), and their structural, morphological, and band alignment properties were analyzed. Precise shutter sequence during the MBE growth process, enable to achieve the strain balanced structure. Cross-sectional transmission electron microscopy exhibited sharp heterointerfaces, and the lattice line extended from the top GaSb layer to the bottom InAs layer. X-ray analysis further confirmed a strain balanced InAs/GaSb multilayer structure. A smooth surface morphology with surface roughness of ∼0.5 nm was demonstrated. The effective barrier height -0.15 eV at the GaSb/InAs heterointerface was determined by X-ray photoelectron spectroscopy, and it was further corroborated by simulation. These results are important to demonstrate desirable characteristics of mixed As/Sb material systems for high-performance and low-power tunnel field-effect transistor applications.
authors.affiliation: Advanced Devices & Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech , Blacksburg, Virginia 24061, United States.
authors.forename: Jheng-Sin
authors.initials: JS
authors.lastname: Liu
authors.forename: Yan
authors.initials: Y
authors.lastname: Zhu
authors.forename: Patrick S
authors.initials: PS
authors.lastname: Goley
authors.forename: Mantu K
authors.initials: MK
authors.lastname: Hudait
keywords: InAs/GaSb; broken gap; heterointerface; molecular beam epitaxy; tunnel transistors