title: The enhanced efficiency of graphene-silicon solar cells by electric field doping.
abstract: The graphene-silicon (Gr-Si) Schottky junction solar cell has been recognized as one of the most low-cost candidates in photovoltaics due to its simple fabrication process. However, the low Gr-Si Schottky barrier height largely limits the power conversion efficiency of Gr-Si solar cells. Here, we demonstrate that electric field doping can be used to tune the work function of a Gr film and therefore improve the photovoltaic performance of the Gr-Si solar cell effectively. The electric field doping effects can be achieved either by connecting the Gr-Si solar cell to an external power supply or by polarizing a ferroelectric polymer layer integrated in the Gr-Si solar cell. Exploration of both of the device architecture designs showed that the power conversion efficiency of Gr-Si solar cells is more than twice of the control Gr-Si solar cells. Our study opens a new avenue for improving the performance of Gr-Si solar cells.
authors.affiliation: State Key Lab of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China. mseyang@zju.edu.cn.
authors.forename: Xuegong
authors.initials: X
authors.lastname: Yu
authors.forename: Lifei
authors.initials: L
authors.lastname: Yang
authors.forename: Qingmin
authors.initials: Q
authors.lastname: Lv
authors.forename: Mingsheng
authors.initials: M
authors.lastname: Xu
authors.forename: Hongzheng
authors.initials: H
authors.lastname: Chen
authors.forename: Deren
authors.initials: D
authors.lastname: Yang