title: Catalyst orientation-induced growth of defect-free zinc-blende structured ⟨001̅⟩ InAs nanowires.
abstract: In this study, we demonstrate the epitaxial growth of ⟨001̅⟩ defect-free zinc-blende structured InAs nanowires on GaAs {111}B substrate using Au catalysts in molecular beam epitaxy. It has been found that the catalysts and their underlying ⟨001̅⟩ nanowires have the orientation relationship of {11̅03}C//{002̅}InAs and [3̅302]C//[11̅0]InAs due to their small in-plane lattice mismatches between their corresponding lattice spacings perpendicular to the {001̅} atomic planes of the nanowires, leading to the formation of the {001̅} catalyst/nanowire interfaces, and consequently the formation of ⟨001̅⟩ nanowires. This study provides a practical approach to manipulate the crystal structure and structural quality of III-V nanowires through carefully controlling the crystal phase of the catalysts.
authors.affiliation: Materials Engineering, ‡Centre for Microscopy and Microanalysis, and §Australian Institute for Bioengineering and Nanotechnology, The University of Queensland , St. Lucia, Queensland 4072, Australia.
authors.forename: Zhi
authors.initials: Z
authors.lastname: Zhang
authors.forename: Kun
authors.initials: K
authors.lastname: Zheng
authors.forename: Zhen-Yu
authors.initials: ZY
authors.lastname: Lu
authors.forename: Ping-Ping
authors.initials: PP
authors.lastname: Chen
authors.forename: Wei
authors.initials: W
authors.lastname: Lu
authors.forename: Jin
authors.initials: J
authors.lastname: Zou
keywords: Epitaxial growth; InAs nanowires; MBE; defect-free