title: Characterization of piezoresistive PEDOT:PSS pressure sensors with inter-digitated and cross-point electrode structures.
abstract: The piezoresistive characteristics of poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) pressure sensors with inter-digitated (IDE) and cross-point electrode (CPE) structures have been investigated. A small variation of the resistance of the pressure sensors with IDE without bottom indium-tin-oxide (b-ITO) film and with CPE structures was observed owing to the single carrier-conducting pathway. For the IDE pressure sensors with b-ITO, the piezoresistive characteristics at low and high pressure were similar to those of the pressure sensors with IDE without b-ITO and with CPE structures, respectively, leading to increased piezoresistive pressure sensitivity as the PEDOT:PSS film thickness decreased. A maximum sensitivity of more than 42 kΩ/Pa was achieved. When the normal pressure was applied, the increased number of conducting points or the reduced distance between the PEDOT oligomers within the PEDOT:PSS film resulted in a decrease of the resistance. The piezoresistive pressure sensors with a single carrier-conducting pathway, i.e., IDE without b-ITO and CPE structures, exhibited a small relaxation time and a superior reversible operation, which can be advantageous for fast piezoresistive response applications.
authors.affiliation: Department of Electronic Engineering, Chang Gung University, Kweishan 33302, Taoyuan, Taiwan. jcwang@mail.cgu.edu.tw.
authors.forename: Jer-Chyi
authors.initials: JC
authors.lastname: Wang
authors.affiliation: Department of Electronic Engineering, Chang Gung University, Kweishan 33302, Taoyuan, Taiwan. rjtkarmakar@gmail.com.
authors.forename: Rajat Subhra
authors.initials: RS
authors.lastname: Karmakar
authors.affiliation: Department of Neurosurgery, Chang Gung Memorial Hospital, Kweishan 33305, Taoyuan, Taiwan. alexlu0416@gmail.com.
authors.forename: Yu-Jen
authors.initials: YJ
authors.lastname: Lu
authors.affiliation: Department of Neurosurgery, Chang Gung Memorial Hospital, Kweishan 33305, Taoyuan, Taiwan. chyinhuang@cgmh.org.tw.
authors.forename: Chiung-Yin
authors.initials: CY
authors.lastname: Huang
authors.affiliation: Department of Neurosurgery, Chang Gung Memorial Hospital, Kweishan 33305, Taoyuan, Taiwan. kuochenwei@adm.cgmh.org.tw.
authors.forename: Kuo-Chen
authors.initials: KC
authors.lastname: Wei
mesh_terms: D019086:Bridged Bicyclo Compounds, Heterocyclic / Q000737:chemistry*; D017097:Electric Impedance; D004566:Electrodes; D011108:Polymers / Q000737:chemistry*; D011137:Polystyrenes / Q000737:chemistry*; D011312:Pressure; D013997:Time Factors; D017971:Tin Compounds / Q000737:chemistry
chemical_list: D019086:Bridged Bicyclo Compounds, Heterocyclic; D011108:Polymers; D011137:Polystyrenes; D017971:Tin Compounds; C121383:poly(3,4-ethylene dioxythiophene); C003321:polystyrene sulfonic acid; C109984:indium tin oxide