title: Highly stable and imperceptible electronics utilizing photoactivated heterogeneous sol-gel metal-oxide dielectrics and semiconductors.
abstract: Incorporation of Zr into an AlOx matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal-oxide devices and circuits with the optimized sol-gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low-temperature solution process.
authors.affiliation: School of Electrical and Electronic Engineering, Chung-Ang University, Seoul, South Korea.
authors.forename: Jeong-Wan
authors.initials: JW
authors.lastname: Jo
authors.forename: Jaekyun
authors.initials: J
authors.lastname: Kim
authors.forename: Kyung-Tae
authors.initials: KT
authors.lastname: Kim
authors.forename: Jin-Gu
authors.initials: JG
authors.lastname: Kang
authors.forename: Myung-Gil
authors.initials: MG
authors.lastname: Kim
authors.forename: Kwang-Ho
authors.initials: KH
authors.lastname: Kim
authors.forename: Hyungduk
authors.initials: H
authors.lastname: Ko
authors.forename: Jiwan
authors.initials: J
authors.lastname: Kim
authors.forename: Yong-Hoon
authors.initials: YH
authors.lastname: Kim
authors.forename: Sung Kyu
authors.initials: SK
authors.lastname: Park
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry; D025802:Electric Capacitance; D005782:Gels / Q000737:chemistry*; D008670:Metals / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry; D012666:Semiconductors; D012996:Solutions / Q000737:chemistry; D013696:Temperature; D014466:Ultraviolet Rays; D015040:Zirconium / Q000737:chemistry
chemical_list: D005782:Gels; D008670:Metals; D010087:Oxides; D012996:Solutions; D015040:Zirconium; D000537:Aluminum Oxide
keywords: Rollable metal oxide TFT; deep UV photo-chemical activation; flexible metal oxide gate dielectric; low temperature; solution process