title: Polarization response of nanowires à la carte.
abstract: Thanks to their special interaction with light, semiconductor nanowires have opened new avenues in photonics, quantum optics and solar energy harvesting. One of the major challenges for their full technological deployment has been their strong polarization dependence in light absorption and emission. In the past, metal nanostructures have been shown to have the ability to modify and enhance the light response of nanoscale objects. Here we demonstrate that a hybrid structure formed by GaAs nanowires with a highly dense array of bow-tie antennas is able to modify the polarization response of a nanowire. As a result, the increase in light absorption for transverse polarized light changes the nanowire polarization response, including the polarization response inversion. This work will open a new path towards the widespread implementation of nanowires applications such as in photodetection, solar energy harvesting and light emission.
authors.affiliation: Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
authors.forename: Alberto
authors.initials: A
authors.lastname: Casadei
authors.affiliation: Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
authors.forename: Esther Alarcon
authors.initials: EA
authors.lastname: Llado
authors.affiliation: Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
authors.forename: Francesca
authors.initials: F
authors.lastname: Amaduzzi
authors.affiliation: Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
authors.forename: Eleonora
authors.initials: E
authors.lastname: Russo-Averchi
authors.affiliation: Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
authors.forename: Daniel
authors.initials: D
authors.lastname: Rüffer
authors.affiliation: Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
authors.forename: Martin
authors.initials: M
authors.lastname: Heiss
authors.affiliation: 1] Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Marys Street, Boston, MA, 02215, USA [2] Division of Materials Science and Engineering, Boston University, 15 Saint Marys Street, Brookline, MA 02446, USA.
authors.forename: Luca
authors.initials: L
authors.lastname: Dal Negro
authors.affiliation: Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
authors.forename: Anna
authors.initials: A
authors.lastname: Fontcuberta i Morral