title: Growth of wafer-scale MoS2 monolayer by magnetron sputtering.
abstract: The two-dimensional layer of molybdenum disulfide (MoS2) exhibits promising prospects in the applications of optoelectronics and valleytronics. Herein, we report a successful new process for synthesizing wafer-scale MoS2 atomic layers on diverse substrates via magnetron sputtering. Spectroscopic and microscopic results reveal that these synthesized MoS2 layers are highly homogeneous and crystallized; moreover, uniform monolayers at wafer scale can be achieved. Raman and photoluminescence spectroscopy indicate comparable optical qualities of these as-grown MoS2 with other methods. The transistors composed of the MoS2 film exhibit p-type performance with an on/off current ratio of ∼10(3) and hole mobility of up to ∼12.2 cm(2) V(-1) s(-1). The strategy reported herein paves new ways towards the large scale growth of various two-dimensional semiconductors with the feasibility of controllable doping to realize desired p- or n-type devices.
authors.affiliation: Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 3, Research Link, Singapore 117602. jgtao81@gmail.com jw-chai@imre.a-star.edu.sg sj-wang@imre.a-star.edu.sg.
authors.forename: Junguang
authors.initials: J
authors.lastname: Tao
authors.forename: Jianwei
authors.initials: J
authors.lastname: Chai
authors.forename: Xin
authors.initials: X
authors.lastname: Lu
authors.forename: Lai Mun
authors.initials: LM
authors.lastname: Wong
authors.forename: Ten It
authors.initials: TI
authors.lastname: Wong
authors.forename: Jisheng
authors.initials: J
authors.lastname: Pan
authors.forename: Qihua
authors.initials: Q
authors.lastname: Xiong
authors.forename: Dongzhi
authors.initials: D
authors.lastname: Chi
authors.forename: Shijie
authors.initials: S
authors.lastname: Wang