title: High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband.
abstract: We report for the first time on the performance of 1300 nm waveband semiconductor disc lasers (SDLs) with wafer fused gain mirrors that implement intracavity diamond and flip-chip heat dissipation schemes based on the same gain material. With a new type of gain mirror structure, maximum output power values reach 7.1 W with intracavity diamond gain mirrors and 5.6 W with flip-chip gain mirrors, using a pump spot diameter of 300 µm, exhibiting a beam quality factor M(2)< 1.25 in the full operation range. These results confirm previously published theoretical modeling of these types of SDLs.
authors.forename: Alexei
authors.initials: A
authors.lastname: Sirbu
authors.forename: Antti
authors.initials: A
authors.lastname: Rantamäki
authors.forename: Esa J
authors.initials: EJ
authors.lastname: Saarinen
authors.forename: Vladimir
authors.initials: V
authors.lastname: Iakovlev
authors.forename: Alexandru
authors.initials: A
authors.lastname: Mereuta
authors.forename: Jari
authors.initials: J
authors.lastname: Lyytikäinen
authors.forename: Andrei
authors.initials: A
authors.lastname: Caliman
authors.forename: Nicolas
authors.initials: N
authors.lastname: Volet
authors.forename: Oleg G
authors.initials: OG
authors.lastname: Okhotnikov
authors.forename: Eli
authors.initials: E
authors.lastname: Kapon
mesh_terms: D004560:Electricity; D054023:Lasers, Semiconductor; D008027:Light; D049449:Luminescence; D012031:Refractometry; D013057:Spectrum Analysis