title: Controllable n-type doping on CVD-grown single- and double-layer graphene mixture.
abstract: n-Type doping of mixed single- and double-layer graphene grown by chemical vapor deposition (CVD) using decamethyl-cobaltocene reveals a local-quasilinear relationship between the work function and the logarithm of the dopant solution concentration. The relationship that arises from bandgap opening is deduced by comparing the relationship between the two factors for single- or double-layer graphene. This work has extensive applicability and practical significance in doping CVD-grown graphene.
authors.affiliation: Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyungbuk, 790-784, South Korea.
authors.forename: Wentao
authors.initials: W
authors.lastname: Xu
authors.forename: Lihua
authors.initials: L
authors.lastname: Wang
authors.forename: Yiwen
authors.initials: Y
authors.lastname: Liu
authors.forename: Simil
authors.initials: S
authors.lastname: Thomas
authors.forename: Hong-Kyu
authors.initials: HK
authors.lastname: Seo
authors.forename: Kwang-Ik
authors.initials: KI
authors.lastname: Kim
authors.forename: Kwang S
authors.initials: KS
authors.lastname: Kim
authors.forename: Tae-Woo
authors.initials: TW
authors.lastname: Lee
keywords: band gap opening; decamethylcobaltocene; electrohydrodynamic nanowire lithography; graphene; work function tuning