title: Controlling the dopant dose in silicon by mixed-monolayer doping.
abstract: Molecular monolayer doping (MLD) presents an alternative to achieve doping of silicon in a nondestructive way and holds potential for realizing ultrashallow junctions and doping of nonplanar surfaces. Here, we report the mixing of dopant-containing alkenes with alkenes that lack this functionality at various ratios to control the dopant concentration in the resulting monolayer and concomitantly the dopant dose in the silicon substrate. The mixed monolayers were grafted onto hydrogen-terminated silicon using well-established hydrosilylation chemistry. Contact angle measurements, X-ray photon spectroscopy (XPS) on the boron-containing monolayers, and Auger electron spectroscopy on the phosphorus-containing monolayers show clear trends as a function of the dopant-containing alkene concentration. Dynamic secondary-ion mass spectroscopy (D-SIMS) and Van der Pauw resistance measurements on the in-diffused samples show an effective tuning of the doping concentration in silicon.
authors.affiliation: Molecular NanoFabrication group, MESA+ Institute for Nanotechnology and ‡NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente , P.O. Box 217, 7500 AE Enschede, The Netherlands.
authors.forename: Liang
authors.initials: L
authors.lastname: Ye
authors.forename: Sidharam P
authors.initials: SP
authors.lastname: Pujari
authors.forename: Han
authors.initials: H
authors.lastname: Zuilhof
authors.forename: Tibor
authors.initials: T
authors.lastname: Kudernac
authors.forename: Michel P
authors.initials: MP
authors.lastname: de Jong
authors.forename: Wilfred G
authors.initials: WG
authors.lastname: van der Wiel
authors.forename: Jurriaan
authors.initials: J
authors.lastname: Huskens
keywords: doping dose; electrical; mixed monolayers; monolayer doping; organic; silicon