title: Reversible control of Co magnetism by voltage-induced oxidation.
abstract: We demonstrate that magnetic properties of ultrathin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy or to an oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. Consequently, an unprecedentedly large change of magnetic anisotropy energy up to 0.73 erg/cm(2) has been realized in a nonvolatile manner using gate voltages of only a few volts. These results open a new route to achieve ultralow energy magnetization manipulation in spintronic devices.
authors.affiliation: Department of Physics, University of Arizona, Tucson, Arizona 85721, USA.
authors.forename: Chong
authors.initials: C
authors.lastname: Bi
authors.affiliation: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: Yaohua
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Department of Physics, University of Arizona, Tucson, Arizona 85721, USA.
authors.forename: T
authors.initials: T
authors.lastname: Newhouse-Illige
authors.affiliation: Department of Physics, University of Arizona, Tucson, Arizona 85721, USA.
authors.forename: M
authors.initials: M
authors.lastname: Xu
authors.affiliation: Department of Physics, University of Arizona, Tucson, Arizona 85721, USA.
authors.forename: M
authors.initials: M
authors.lastname: Rosales
authors.affiliation: Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: J W
authors.initials: JW
authors.lastname: Freeland
authors.affiliation: Department of Physics and Astronomy, University of Alabama, Tuscaloosa, Alabama 35487, USA.
authors.forename: Oleg
authors.initials: O
authors.lastname: Mryasov
authors.affiliation: Department of Physics, University of Arizona, Tucson, Arizona 85721, USA.
authors.forename: Shufeng
authors.initials: S
authors.lastname: Zhang
authors.affiliation: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: S G E
authors.initials: SG
authors.lastname: te Velthuis
authors.affiliation: Department of Physics, University of Arizona, Tucson, Arizona 85721, USA.
authors.forename: W G
authors.initials: WG
authors.lastname: Wang