title: Optical injection locking of monolithically integrated photonic source for generation of high purity signals above 100 GHz.
abstract: A monolithically integrated photonic source for tuneable mm-wave signal generation has been fabricated. The source consists of 14 active components, i.e. semiconductor lasers, amplifiers and photodetectors, all integrated on a 3 mm(2) InP chip. Heterodyne signals in the range between 85 GHz and 120 GHz with up to -10 dBm output power have been successfully generated. By optically injection locking the integrated lasers to an external optical comb source, high-spectral-purity signals at frequencies >100 GHz have been generated, with phase noise spectral density below -90 dBc/Hz being achieved at offsets from the carrier greater than 10 kHz.
authors.forename: Katarzyna
authors.initials: K
authors.lastname: Balakier
authors.forename: Martyn J
authors.initials: MJ
authors.lastname: Fice
authors.forename: Frederic
authors.initials: F
authors.lastname: van Dijk
authors.forename: Gael
authors.initials: G
authors.lastname: Kervella
authors.forename: Guillermo
authors.initials: G
authors.lastname: Carpintero
authors.forename: Alwyn J
authors.initials: AJ
authors.lastname: Seeds
authors.forename: Cyril C
authors.initials: CC
authors.lastname: Renaud
mesh_terms: D004581:Electronics; D005246:Feedback; D007834:Lasers; D017785:Photons; D012815:Signal Processing, Computer-Assisted