title: Tuning carrier mobilities and polarity of charge transport in films of CuInSe(x)S(2-x) quantum dots.
abstract: CuInSe(x)S(2-x) quantum dot field-effect transistors show p-type, n-type, and ambipolar behaviors with carrier mobilities up to 0.03 cm(2) V(-1) s(-1). Although some design rules from studies of cadmium and lead containing quantum dots can be applied, remarkable differences are observed including a strong gating effect in as-synthesized nanocyrstals with long ligands.
authors.affiliation: Center for Advanced Solar Photophysics, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA.
authors.forename: Sergiu
authors.initials: S
authors.lastname: Draguta
authors.forename: Hunter
authors.initials: H
authors.lastname: McDaniel
authors.forename: Victor I
authors.initials: VI
authors.lastname: Klimov
keywords: CuInS2; CuInSe2; field-effect transistors; nanocrystals; quantum dots