title: Vertical bipolar charge plasma transistor with buried metal layer.
abstract: A self-aligned vertical Bipolar Charge Plasma Transistor (V-BCPT) with a buried metal layer between undoped silicon and buried oxide of the silicon-on-insulator substrate, is reported in this paper. Using two-dimensional device simulation, the electrical performance of the proposed device is evaluated in detail. Our simulation results demonstrate that the V-BCPT not only has very high current gain but also exhibits high BVCEO · f(T) product making it highly suitable for mixed signal high speed circuits. The proposed device structure is also suitable for realizing doping-less bipolar charge plasma transistor using compound semiconductors such as GaAs, SiC with low thermal budgets. The device is also immune to non-ideal current crowding effects cropping up at high current densities.
authors.affiliation: Department of Electrical Engineering, Indian Institute of Technology, New Delhi 110 016, India.
authors.forename: Kanika
authors.initials: K
authors.lastname: Nadda
authors.affiliation: Department of Electrical Engineering, Indian Institute of Technology, New Delhi 110 016, India.
authors.forename: M Jagadesh
authors.initials: MJ
authors.lastname: Kumar