title: Electroabsorption-modulated widely tunable DBR laser transmitter for WDM-PONs.
abstract: We present an InP based distributed Bragg reflector (DBR) laser transmitter which has a wide wavelength tuning range and a high chip output power for wavelength division multiplexing passive optical network (WDM-PON) applications. By butt-jointing InGaAsP with 1.45 µm emission wavelength as the material of the grating section, the laser wavelength can be tuned for over 13 nm by the DBR current. Accompanied by varying the chip temperature, the tuning range can be further enlarged to 16 nm. With the help of the integrated semiconductor optical amplifier (SOA), the largest chip output power is over 30 mW. The electroabsorption modulator (EAM) is integrated into the device by the selective-area growth (SAG) technique. The 3 dB small signal modulation bandwidth of the EAM is over 13 GHz. The device has both a simple tuning scheme and a simple fabrication procedure, making it suitable for low cost massive production which is desirable for WDM-PON uses.
authors.forename: Liangshun
authors.initials: L
authors.lastname: Han
authors.forename: Song
authors.initials: S
authors.lastname: Liang
authors.forename: Huitao
authors.initials: H
authors.lastname: Wang
authors.forename: Lijun
authors.initials: L
authors.lastname: Qiao
authors.forename: Junjie
authors.initials: J
authors.lastname: Xu
authors.forename: Lingjuan
authors.initials: L
authors.lastname: Zhao
authors.forename: Hongliang
authors.initials: H
authors.lastname: Zhu
authors.forename: Baojun
authors.initials: B
authors.lastname: Wang
authors.forename: Wei
authors.initials: W
authors.lastname: Wang
mesh_terms: D065638:Absorption, Radiation; D004560:Electricity; D004581:Electronics; D007834:Lasers; D055620:Optical Phenomena; D055095:Optics and Photonics / Q000295:instrumentation*; D013057:Spectrum Analysis