title: Self-assembled metallic nanowire-based vertical organic field-effect transistor.
abstract: We report on in situ, self-assembly, solution-processing of metallic (Au/Ag) nanowire-based transparent electrodes integrated to vertical organic field-effect transistors (VOFETs). In the VOFET architecture, the nanowires' microstructure facilitates current modulation by the gate across the otherwise shielding sandwiched source electrode. We show N-type VOFETs operation with on/off ratio ∼1 × 10(5) and high current density (>1 mA cm(-2) at VDS = 5 V). The integration of the device design and the transparent electrode deposition methods offers a potential route for all-solution processing-based, large-area, high-efficiency organic electronics.
authors.affiliation: Sara and Moshe Zisapel Nano-Electronics Center, Department of Electrical Engineering, Technion-Israel Institute of Technology , Haifa 3200, Israel.
authors.forename: Ariel J
authors.initials: AJ
authors.lastname: Ben-Sasson
authors.forename: Daniel
authors.initials: D
authors.lastname: Azulai
authors.forename: Hagit
authors.initials: H
authors.lastname: Gilon
authors.forename: Antonio
authors.initials: A
authors.lastname: Facchetti
authors.forename: Gil
authors.initials: G
authors.lastname: Markovich
authors.forename: Nir
authors.initials: N
authors.lastname: Tessler
keywords: nanowires; organic electronics; self-assembly; transparent electrodes; vertical FETs