title: Efficiency dip observed with InGaN-based multiple quantum well solar cells.
abstract: The dip of external quantum efficiency (EQE) is observed on In(0.15)Ga(0.85)N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.
authors.forename: K Y
authors.initials: KY
authors.lastname: Lai
authors.forename: G J
authors.initials: GJ
authors.lastname: Lin
authors.forename: Yuh-Renn
authors.initials: YR
authors.lastname: Wu
authors.forename: Meng-Lun
authors.initials: ML
authors.lastname: Tsai
authors.forename: Jr-Hau
authors.initials: JH
authors.lastname: He