title: Enhanced light output power of thin film GaN-based high voltage light-emitting diodes.
abstract: The characteristics of high-voltage light-emitting diodes (HVLEDs) consisting of a 64-cell LED array were investigated by employing various LED structures. Two types of HVLED were examined: a standard HVLED with a single roughened indium tin oxide (ITO) surface grown on a sapphire substrate and a thin-film HVLED (TF-HVLED) with a roughened n-GaN and ITO double side transferred to a mirror/silicon substrate. At an injection current of 24 mA, the output powers of the HVLEDs fabricated using a sapphire substrate and those fabricated using a mirror/silicon substrate were 170 and 216 mW, respectively. Because the TF-HVLED exhibited improved thermal dissipation and light extraction, it produced a greater output power than the HVLED fabricated using the sapphire substrate did.
authors.forename: Ching-Ho
authors.initials: CH
authors.lastname: Tien
authors.forename: Ken-Yen
authors.initials: KY
authors.lastname: Chen
authors.forename: Chen-Peng
authors.initials: CP
authors.lastname: Hsu
authors.forename: Ray-Hua
authors.initials: RH
authors.lastname: Horng
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry* / Q000528:radiation effects; D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007909:Lenses; D008027:Light; D008029:Lighting / Q000295:instrumentation*; D053768:Metal Nanoparticles / Q000737:chemistry*; D012542:Scattering, Radiation; D012666:Semiconductors
chemical_list: C473348:gallium nitride; D005708:Gallium; D000537:Aluminum Oxide