title: Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon.
abstract: We demonstrate controllable and tunable full color light generation through the monolithic integration of blue, green/yellow, and orange/red InGaN nanowire light-emitting diodes (LEDs). Such multi-color nanowire LED arrays are fabricated directly on Si substrate using a three-step selective area molecular beam epitaxy growth process. The lateral-arranged multi-color subpixels enable controlled light mixing at the chip-level and yield color-tunable light emission with CCT values in the range from 1900 K to 6800 K, while maintaining excellent color rendering capability. This work provides a viable approach for achieving micron and nanoscale tunable full-color LED arrays without the compromise between the device efficiency and light quality associated with conventional phosphor-based LEDs.
authors.forename: Renjie
authors.initials: R
authors.lastname: Wang
authors.forename: Hieu P T
authors.initials: HP
authors.lastname: Nguyen
authors.forename: Ashfiqua T
authors.initials: AT
authors.lastname: Connie
authors.forename: J
authors.initials: J
authors.lastname: Lee
authors.forename: Ishiang
authors.initials: I
authors.lastname: Shih
authors.forename: Zetian
authors.initials: Z
authors.lastname: Mi