title: Epsilon-near-zero meta-lens for high resolution wide-field imaging.
abstract: Herein, we will propose a new application possibility of epsilon-near-zero (ENZ) materials: high resolution wide-field imaging. We show that the resolution can be dramatically enhanced by simply inserting a thin epsilon-near-zero (ENZ) material between the sample and substrate. By performing metal half-plane imaging, we experimentally demonstrate that the resolution could be enhanced by about 47% with a 300-nm-thick SiO2interlayer, an ENZ material at 8-μm-wavelength (1250 cm-1). The physical origin of the resolution enhancement is the strong conversion of diffracted near fields to quasi-zeroth order far fields enabled by the directive emission of ENZ materials.
authors.forename: Jisoo
authors.initials: J
authors.lastname: Kyoung
authors.forename: Doo Jae
authors.initials: DJ
authors.lastname: Park
authors.forename: Sun Jung
authors.initials: SJ
authors.lastname: Byun
authors.forename: Jaeho
authors.initials: J
authors.lastname: Lee
authors.forename: Soo Bong
authors.initials: SB
authors.lastname: Choi
authors.forename: Seongjun
authors.initials: S
authors.lastname: Park
authors.forename: Sung Woo
authors.initials: SW
authors.lastname: Hwang
mesh_terms: D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007089:Image Enhancement / Q000295:instrumentation*; D007090:Image Interpretation, Computer-Assisted / Q000295:instrumentation* / Q000379:methods*; D007909:Lenses; D008853:Microscopy / Q000295:instrumentation*; D019047:Phantoms, Imaging; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity