title: Comparing graphene growth on Cu(111) versus oxidized Cu(111).
abstract: The epitaxial growth of graphene on catalytically active metallic surfaces via chemical vapor deposition (CVD) is known to be one of the most reliable routes toward high-quality large-area graphene. This CVD-grown graphene is generally coupled to its metallic support resulting in a modification of its intrinsic properties. Growth on oxides is a promising alternative that might lead to a decoupled graphene layer. Here, we compare graphene on a pure metallic to graphene on an oxidized copper surface in both cases grown by a single step CVD process under similar conditions. Remarkably, the growth on copper oxide, a high-k dielectric material, preserves the intrinsic properties of graphene; it is not doped and a linear dispersion is observed close to the Fermi energy. Density functional theory calculations give additional insight into the reaction processes and help explaining the catalytic activity of the copper oxide surface.
authors.affiliation: Zernike Institute for Advanced Materials, University of Groningen , Nijenborgh 4, 9747 AG Groningen, The Netherlands.
authors.forename: Stefano
authors.initials: S
authors.lastname: Gottardi
authors.forename: Kathrin
authors.initials: K
authors.lastname: Müller
authors.forename: Luca
authors.initials: L
authors.lastname: Bignardi
authors.forename: Juan Carlos
authors.initials: JC
authors.lastname: Moreno-López
authors.forename: Tuan Anh
authors.initials: TA
authors.lastname: Pham
authors.forename: Oleksii
authors.initials: O
authors.lastname: Ivashenko
authors.forename: Mikhail
authors.initials: M
authors.lastname: Yablonskikh
authors.forename: Alexei
authors.initials: A
authors.lastname: Barinov
authors.forename: Jonas
authors.initials: J
authors.lastname: Björk
authors.forename: Petra
authors.initials: P
authors.lastname: Rudolf
authors.forename: Meike
authors.initials: M
authors.lastname: Stöhr
keywords: ARPES; Graphene; STM; catalysis; copper oxide; dielectric; electronic properties