title: Formation of a built-in field at the porphyrin/ITO interface directly proven by the time-resolved photovoltage technique.
abstract: Two assemblies, porphyrin powder/ITO and porphyrin film/ITO, were built by a facile method. The time-resolved photovoltage technique was utilized to prove the behaviour of photo-induced charges in the two assemblies. The photovoltage results show that the porphyrin film/ITO assembly displays a reversal polarity response, which is different from the response of porphyrin powder/ITO. This phenomenon is due to the effect of a built-in field on photo-induced charge behaviour at the porphyrin film/ITO interface. This result is beneficial for the development of a measuring method for detecting heterojunction interface formation and understanding the photoelectric process in photoelectric materials and devices.
authors.affiliation: School of Chemistry and Chemical Technology, Shanghai Jiao Tong University, Shanghai 200240, P. R. China. weixiao@sjtu.edu.cn xinhaoli@sjtu.edu.cn.
authors.forename: Xiao
authors.initials: X
authors.lastname: Wei
authors.forename: Li-Na
authors.initials: LN
authors.lastname: Han
authors.forename: Cheng-Yu
authors.initials: CY
authors.lastname: Mao
authors.forename: De-Jun
authors.initials: DJ
authors.lastname: Wang
authors.forename: Xin-Hao
authors.initials: XH
authors.lastname: Li
authors.forename: Ping-Yun
authors.initials: PY
authors.lastname: Feng
authors.forename: Jie-Sheng
authors.initials: JS
authors.lastname: Chen