title: High-efficiency Si optical modulator using Cu travelling-wave electrode.
abstract: We demonstrate a high-efficiency and CMOS-compatible silicon Mach-Zehnder Interferometer (MZI) optical modulator with Cu traveling-wave electrode and doping compensation. The measured electro-optic bandwidth at Vbias = -5 V is above 30 GHz when it is operated at 1550 nm. At a data rate of 50 Gbps, the dynamic extinction ratio is more than 7 dB. The phase shifter is composed of a 3 mm-long reverse-biased PN junction with modulation efficiency (Vπ·Lπ) of ~18.5 V·mm. Such a Cu-photonics technology provides an attractive potentiality for integration development of silicon photonics and CMOS circuits on SOI wafer in the future.
authors.forename: Yan
authors.initials: Y
authors.lastname: Yang
authors.forename: Qing
authors.initials: Q
authors.lastname: Fang
authors.forename: Mingbin
authors.initials: M
authors.lastname: Yu
authors.forename: Xiaoguang
authors.initials: X
authors.lastname: Tu
authors.forename: Rusli
authors.initials: R
authors.lastname: Rusli
authors.forename: Guo-Qiang
authors.initials: GQ
authors.lastname: Lo
mesh_terms: D003198:Computer Simulation; D003300:Copper / Q000737:chemistry*; D004560:Electricity; D004566:Electrodes; D004581:Electronics; D007091:Image Processing, Computer-Assisted; D007368:Interferometry / Q000295:instrumentation; D008853:Microscopy; D008855:Microscopy, Electron, Scanning; D055096:Optical Devices; D055620:Optical Phenomena; D012825:Silicon / Q000737:chemistry*
chemical_list: D003300:Copper; D012825:Silicon