title: Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies.
abstract: We report the lattice site and symmetry of optically active Dy3+and Tm3+implanted Si. Local symmetry was determined by fitting crystal field parameters (CFPs), corresponding to various common symmetries, to the ground state splitting determined by photoluminescence measurements. These CFP values were then used to calculate the splitting of every J manifold. We find that both Dy and Tm ions are in a Si substitution site with local tetragonal symmetry. Knowledge of rare-earth ion symmetry is important in maximising the number of optically active centres and for quantum technology applications where local symmetry can be used to control decoherence.
authors.forename: Mark A
authors.initials: MA
authors.lastname: Hughes
authors.forename: Manon A
authors.initials: MA
authors.lastname: Lourenço
authors.forename: J David
authors.initials: JD
authors.lastname: Carey
authors.forename: Ben
authors.initials: B
authors.lastname: Murdin
authors.forename: Kevin P
authors.initials: KP
authors.lastname: Homewood
mesh_terms: D003460:Crystallization; D004419:Dysprosium / Q000737:chemistry*; D049449:Luminescence; D017785:Photons; D011789:Quantum Theory; D012825:Silicon / Q000737:chemistry*; D055672:Static Electricity; D013816:Thermodynamics; D013932:Thulium / Q000737:chemistry*
chemical_list: D004419:Dysprosium; D013932:Thulium; D012825:Silicon