title: Spatial atmospheric atomic layer deposition of InxGayZnzO for thin film transistors.
abstract: We have investigated the nucleation and growth of InGaZnO thin films by spatial atmospheric atomic layer deposition. Diethyl zinc (DEZ), trimethyl indium (TMIn), triethyl gallium (TEGa), and water were used as Zn, In, Ga and oxygen precursors, respectively. The vaporized metal precursors have been coinjected in the reactor. The metal composition of InGaZnO has been controlled by varying the TMIn or TEGa flow to the reactor, for a given DEZ flow and exposure time. The morphology of the films changes from polycrystalline, for ZnO and In-doped ZnO, to amorphous for In-rich IZO and InGaZnO. The use of these films as the active channel in TFTs has been demonstrated and the influence of In and Ga cations on the electrical characteristics of the TFTs has been studied.
authors.affiliation: Holst Centre/TNO , High Tech Campus 31, 5600 AE Eindhoven, The Netherlands.
authors.forename: A
authors.initials: A
authors.lastname: Illiberi
authors.forename: B
authors.initials: B
authors.lastname: Cobb
authors.forename: A
authors.initials: A
authors.lastname: Sharma
authors.forename: T
authors.initials: T
authors.lastname: Grehl
authors.forename: H
authors.initials: H
authors.lastname: Brongersma
authors.forename: F
authors.initials: F
authors.lastname: Roozeboom
authors.forename: G
authors.initials: G
authors.lastname: Gelinck
authors.forename: P
authors.initials: P
authors.lastname: Poodt
keywords: amorphous semiconductors; atmospheric pressure; atomic layer deposition; indium gallium zinc oxide; nucleation; thin film transistors