title: Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer.
abstract: A surface plasmon (SP)-enhanced nanoporous GaN-based green LED based on top-down processing technology has been successfully fabricated. This SP-enhanced LED consists of nanopores passing through the multiple quantum wells (MQWs) region, with Ag nanorod array filled in the nanopores for SP-MQWs coupling and thin Al(2)O(3) passivation layer for electrical protection. Compared with nanoporous LED without Ag nanorods, the electroluminescence (EL) peak intensity for the SP-enhanced LED was greatly enhanced by 380% and 220% at an injection current density of 1 and 20A/cm(2), respectively. Our results show that the increased EL intensity is mainly attributed to the improved internal quantum efficiency of LED due to the SP coupling between Ag nanorods and MQWs.
authors.forename: Zhi-Guo
authors.initials: ZG
authors.lastname: Yu
authors.forename: Li-Xia
authors.initials: LX
authors.lastname: Zhao
authors.forename: Xue-Cheng
authors.initials: XC
authors.lastname: Wei
authors.forename: Xue-Jiao
authors.initials: XJ
authors.lastname: Sun
authors.forename: Ping-Bo
authors.initials: PB
authors.lastname: An
authors.forename: Shi-Chao
authors.initials: SC
authors.lastname: Zhu
authors.forename: Lei
authors.initials: L
authors.lastname: Liu
authors.forename: Li-Xin
authors.initials: LX
authors.lastname: Tian
authors.forename: Feng
authors.initials: F
authors.lastname: Zhang
authors.forename: Hong-Xi
authors.initials: HX
authors.lastname: Lu
authors.forename: Jun-Xi
authors.initials: JX
authors.lastname: Wang
authors.forename: Yi-Ping
authors.initials: YP
authors.lastname: Zeng
authors.forename: Jin-Min
authors.initials: JM
authors.lastname: Li
mesh_terms: D000327:Adsorption; D000537:Aluminum Oxide / Q000737:chemistry*; D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D008027:Light; D008029:Lighting / Q000295:instrumentation*; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure; D058608:Nanopores / Q000648:ultrastructure; D012542:Scattering, Radiation; D012666:Semiconductors; D020349:Surface Plasmon Resonance / Q000295:instrumentation*
chemical_list: C473348:gallium nitride; D005708:Gallium; D000537:Aluminum Oxide