title: Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy.
abstract: Hexagonal boron nitride (h-BN) has attracted significant attention because of its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapour deposition in earlier reports are always polycrystalline with small grains because of high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils. It is found that the nucleation density can be greatly reduced to 60 per mm(2) by optimizing Ni ratio in substrates. The strategy enables the growth of single-crystal h-BN grains up to 7,500 μm(2), approximately two orders larger than that in previous reports. This work not only provides valuable information for understanding h-BN nucleation and growth mechanisms, but also gives an effective alternative to exfoliated h-BN as a high-quality dielectric layer for large-scale nanoelectronic applications.
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
authors.forename: Guangyuan
authors.initials: G
authors.lastname: Lu
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
authors.forename: Tianru
authors.initials: T
authors.lastname: Wu
authors.affiliation: Department of Physics, East China Normal University, Shanghai 200241, China.
authors.forename: Qinghong
authors.initials: Q
authors.lastname: Yuan
authors.affiliation: 1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China [2] School of Physics and Electronics, Central South University, Changsha 410083, China.
authors.forename: Huishan
authors.initials: H
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
authors.forename: Haomin
authors.initials: H
authors.lastname: Wang
authors.affiliation: Institute of Textiles and Clothing, Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, China.
authors.forename: Feng
authors.initials: F
authors.lastname: Ding
authors.affiliation: 1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China [2] School of Physical Science and Technology, Shanghai Tech University, 319 Yueyang Road, Shanghai 200031, China.
authors.forename: Xiaoming
authors.initials: X
authors.lastname: Xie
authors.affiliation: 1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China [2] School of Physical Science and Technology, Shanghai Tech University, 319 Yueyang Road, Shanghai 200031, China.
authors.forename: Mianheng
authors.initials: M
authors.lastname: Jiang