title: Regularly patterned non-polar InGaN/GaN quantum-well nanorod light-emitting diode array.
abstract: The growth and process of a regularly patterned nanorod (NR)- light-emitting diode (LED) array with its emission from sidewall non-polar quantum wells (QWs) are demonstrated. A pyramidal un-doped GaN structure is intentionally formed at the NR top for minimizing the current flow through this portion of the NR such that the injection current can be effectively guided to the sidewall m-plane InGaN/GaN QWs for emission excitation by a conformal transparent conductor (GaZnO). The injected current density at a given applied voltage of the NR LED device is similar to that of a planar c-plane or m-plane LED. The blue-shift trend of NR LED output spectrum with increasing injection current is caused by the non-uniform distributions of QW width and indium content along the height on a sidewall. The photoluminescence spectral shift under reversed bias confirms that the emission of the fabricated NR LED comes from non-polar QWs.
authors.forename: Charng-Gan
authors.initials: CG
authors.lastname: Tu
authors.forename: Che-Hao
authors.initials: CH
authors.lastname: Liao
authors.forename: Yu-Feng
authors.initials: YF
authors.lastname: Yao
authors.forename: Horng-Shyang
authors.initials: HS
authors.lastname: Chen
authors.forename: Chun-Han
authors.initials: CH
authors.lastname: Lin
authors.forename: Chia-Ying
authors.initials: CY
authors.lastname: Su
authors.forename: Pei-Ying
authors.initials: PY
authors.lastname: Shih
authors.forename: Wei-Han
authors.initials: WH
authors.lastname: Chen
authors.forename: Erwin
authors.initials: E
authors.lastname: Zhu
authors.forename: Yean-Woei
authors.initials: YW
authors.lastname: Kiang
authors.forename: C C
authors.initials: CC
authors.lastname: Yang