title: Edge-on gating effect in molecular wires.
abstract: This work demonstrates edge-on chemical gating effect in molecular wires utilizing the pyridinoparacyclophane (PC) moiety as the gate. Different substituents with varied electronic demands are attached to the gate to simulate the effect of varying gating voltages similar to that in field-effect transistor (FET). It was observed that the orbital energy level and charge carrier's tunneling barriers can be tuned by changing the gating group from strong electron acceptors to strong electron donors. The single molecule conductance and current-voltage characteristics of this molecular system are truly similar to those expected for an actual single molecular transistor.
authors.affiliation: Department of Chemistry and the James Franck Institute, The University of Chicago , 929 E 57th Street, Chicago, Illinois 60637, United States.
authors.forename: Wai-Yip
authors.initials: WY
authors.lastname: Lo
authors.forename: Wuguo
authors.initials: W
authors.lastname: Bi
authors.forename: Lianwei
authors.initials: L
authors.lastname: Li
authors.forename: In Hwan
authors.initials: IH
authors.lastname: Jung
authors.forename: Luping
authors.initials: L
authors.lastname: Yu
keywords: Molecular electronics; STM break-junction; cyclophane; edge-on gating