title: Influence of black silicon surfaces on the performance of back-contacted back silicon heterojunction solar cells.
abstract: The influence of different black silicon (b-Si) front side textures prepared by inductively coupled reactive ion etching (ICP-RIE) on the performance of back-contacted back silicon heterojunction (BCB-SHJ) solar cells is investigated in detail regarding their optical performance, black silicon surface passivation and internal quantum efficiency. Under optimized conditions the effective minority carrier lifetime measured on black silicon surfaces passivated with Al(2)O(3) can be higher than lifetimes measured for the SiO(2)/SiN(x) passivation stack used in the reference cells with standard KOH textures. However, to outperform the electrical current of silicon back-contact cells, the black silicon back-contact cell process needs to be optimized with aspect to chemical and thermal stability of the used dielectric layer combination on the cell.
authors.forename: Johannes
authors.initials: J
authors.lastname: Ziegler
authors.forename: Jan
authors.initials: J
authors.lastname: Haschke
authors.forename: Thomas
authors.initials: T
authors.lastname: Käsebier
authors.forename: Lars
authors.initials: L
authors.lastname: Korte
authors.forename: Alexander N
authors.initials: AN
authors.lastname: Sprafke
authors.forename: Ralf B
authors.initials: RB
authors.lastname: Wehrspohn
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry*; D003198:Computer Simulation; D017076:Computer-Aided Design; D011211:Electric Power Supplies; D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008422:Materials Testing; D008962:Models, Theoretical; D012542:Scattering, Radiation; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D012993:Solar Energy; D013499:Surface Properties
chemical_list: D000537:Aluminum Oxide; D012825:Silicon