title: Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor.
abstract: A highly sensitive single-walled carbon nanotube/C60 -based infrared photo-transistor is fabricated with a responsivity of 97.5 A W(-1) and detectivity of 1.17 × 10(9) Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈10(4) with a response time of several milliseconds.
authors.affiliation: Department of Materials Science and Engineering, Stanford University, Durand Building, 496 Lomita Mall, Stanford, CA, 94305-4034, USA.
authors.forename: Steve
authors.initials: S
authors.lastname: Park
authors.forename: Soo Jin
authors.initials: SJ
authors.lastname: Kim
authors.forename: Ji Hyun
authors.initials: JH
authors.lastname: Nam
authors.forename: Gregory
authors.initials: G
authors.lastname: Pitner
authors.forename: Tae Hoon
authors.initials: TH
authors.lastname: Lee
authors.forename: Alexander L
authors.initials: AL
authors.lastname: Ayzner
authors.forename: Huiliang
authors.initials: H
authors.lastname: Wang
authors.forename: Scott W
authors.initials: SW
authors.lastname: Fong
authors.forename: Michael
authors.initials: M
authors.lastname: Vosgueritchian
authors.forename: Young Jun
authors.initials: YJ
authors.lastname: Park
authors.forename: Mark L
authors.initials: ML
authors.lastname: Brongersma
authors.forename: Zhenan
authors.initials: Z
authors.lastname: Bao
keywords: carbon nanotubes; fullerene; photodetectors; transistors