title: Black phosphorus quantum dots.
abstract: As a unique two-dimensional nanomaterial, layered black phosphorus (BP) nanosheets have shown promising applications in electronics. Although mechanical exfoliation was successfully used to prepare BP nanosheets, it is still a challenge to produce novel BP nanostructures in high yield. A facile top-down approach for preparation of black phosphorus quantum dots (BPQDs) in solution is presented. The obtained BPQDs have a lateral size of 4.9±1.6 nm and thickness of 1.9±0.9 nm (ca. 4±2 layers). As a proof-of-concept application, by using BPQDs mixed with polyvinylpyrrolidone as the active layer, a flexible memory device was successfully fabricated that exhibits a nonvolatile rewritable memory effect with a high ON/OFF current ratio and good stability.
authors: Energy Research Institute @ NTU (ERI@N), Interdisciplinary Graduate School, Nanyang Technological University, 50 Nanyang Drive, Singapore 637553 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore) http://www.ntu.edu.sg/home/hzhang/
authors: Xiao
authors: X
authors: Zhang
authors: Haiming
authors: H
authors: Xie
authors: Zhengdong
authors: Z
authors: Liu
authors: Chaoliang
authors: C
authors: Tan
authors: Zhimin
authors: Z
authors: Luo
authors: Hai
authors: H
authors: Li
authors: Jiadan
authors: J
authors: Lin
authors: Liqun
authors: L
authors: Sun
authors: Wei
authors: W
authors: Chen
authors: Zhichuan
authors: Z
authors: Xu
authors: Linghai
authors: L
authors: Xie
authors: Wei
authors: W
authors: Huang
authors: Hua
authors: H
authors: Zhang
keywords: black phosphorus; memory devices; quantum dots; two-dimensional materials