title: Restoring defect structures in 3C-SiC/Si (001) from spherical aberration-corrected high-resolution transmission electron microscope images by means of deconvolution processing.
abstract: The [110] cross-sectional samples of 3C-SiC/Si (001) were observed with a spherical aberration-corrected 300 kV high-resolution transmission electron microscope. Two images taken not close to the Scherzer focus condition and not representing the projected structures intuitively were utilized for performing the deconvolution. The principle and procedure of image deconvolution and atomic sort recognition are summarized. The defect structure restoration together with the recognition of Si and C atoms from the experimental images has been illustrated. The structure maps of an intrinsic stacking fault in the area of SiC, and of Lomer and 60° shuffle dislocations at the interface have been obtained at atomic level.
authors: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Science, Southwest University of Science and Technology, Mianyang 621010, China.
authors: C
authors: C
authors: Wen
authors: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors: W
authors: W
authors: Wan
authors: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. Electronic address: lifh@aphy.iphy.ac.cn.
authors: F H
authors: FH
authors: Li
authors: FEI Company, Achtseweg Noord 5, 5651 GG Eindhoven, The Netherlands.
authors: D
authors: D
authors: Tang
mesh_terms: D003430:Cross-Sectional Studies; D004583:Electrons; D007091:Image Processing, Computer-Assisted; D008854:Microscopy, Electron / Q000295:instrumentation*; D046529:Microscopy, Electron, Transmission / Q000295:instrumentation*
keywords: 3C-SiC/Si; Aberration-corrected high-resolution transmission electron microscopy; Image deconvolution; Lomer dislocation; Perfect 60° dislocation; Stacking fault