title: Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy.
abstract: In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can be seen as a model substrate, providing information of systematic relevance also for other substrates. Thin Ti masks are structured by electron beam lithography which allows the fabrication of perfectly homogeneous GaN NW arrays with different diameters and distances. While the wurtzite NWs are found to be Ga-polar, N-polar nucleation leads to the formation of tripod structures with a zinc-blende core which can be efficiently suppressed above a substrate temperature of 870 °C. A variation of the III/V flux ratio reveals that both axial and radial growth rates are N-limited despite the globally N-rich growth conditions, which is explained by the different diffusion behavior of Ga and N atoms. Furthermore, it is shown that the hole arrangement has no effect on the selectivity but can be used to force a transition from nanowire to nanotube growth by employing a highly competitive growth regime.
authors: Walter Schottky Institut and Physics Department, Technische Universität München , Am Coulombwall 4, 85748 Garching, Germany.
authors: Fabian
authors: F
authors: Schuster
authors: Martin
authors: M
authors: Hetzl
authors: Saskia
authors: S
authors: Weiszer
authors: Jose A
authors: JA
authors: Garrido
authors: María
authors: M
authors: de la Mata
authors: Cesar
authors: C
authors: Magen
authors: Jordi
authors: J
authors: Arbiol
authors: Martin
authors: M
authors: Stutzmann
keywords: GaN; Nanowires; molecular beam epitaxy; polarity; proximity effects; selective area growth