title: Nanoplatelets bridging a nanotrench: a new architecture for photodetectors with increased sensitivity.
abstract: Interparticle charge hopping severely limits the integration of colloidal nanocrystals films for optoelectronic device applications. We propose here to overcome this problem by using high aspect ratio interconnects made of wide electrodes separated by a few tens of namometers, a distance matching the size of a single nanoplatelet. The semiconducting CdSe/CdS nanoplatelet coupling with such electrodes allows an efficient electron-hole pair dissociation despite the large binding energy of the exciton, resulting in optimal photoconductance responsivity. We report the highest responsivity obtained so far for CdSe colloidal material with values reaching kA·W(-1), corresponding to eight decades of enhancement compared to usual micrometer-scaled architectures. In addition, a decrease of 1 order of magnitude of the current noise is observed, revealing the reduced influence of the surface traps on transport. The nanotrench geometry provides top access to ion gel electrolyte gating, allowing for a photoresponsive transistor with 10(4) on/off ratio. A simple analytical model reproduces the device behavior and underlines the key parameters related to its performance.
authors: Nexdot , 10 rue Vauquelin, Paris, France.
authors: Emmanuel
authors: E
authors: Lhuillier
authors: Jean-Francois
authors: JF
authors: Dayen
authors: Daniel O
authors: DO
authors: Thomas
authors: Adrien
authors: A
authors: Robin
authors: Bernard
authors: B
authors: Doudin
authors: Benoit
authors: B
authors: Dubertret
keywords: Semiconductor nanoparticles; electrolyte gating; nanoplatelets; noise; photodetection; quantum dot