title: Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE.
abstract: We present experimental results showing how the growth rate, morphology and crystal structure of Au-catalyzed InP nanowires (NWs) fabricated by selective area metal organic molecular beam epitaxy can be tuned by the growth parameters: temperature and phosphine flux. The InP NWs with 20-65 nm diameters are grown at temperatures of 420 and 480 °C with the PH3 flow varying from 1 to 9 sccm. The NW tapering is suppressed at a higher temperature, while pure wurtzite crystal structure is preferred at higher phosphine flows. Therefore, by combining high temperature and high phosphine flux, we are able to fabricate non-tapered and stacking fault-free InP NWs with the quality that other methods rarely achieve. We also develop a model for NW growth and crystal structure which explains fairly well the observed experimental tendencies.
authors: Electrical Engineering Faculty, Technion-Israel Institute of Technology, Haifa 32000, Israel.
authors: A
authors: A
authors: Kelrich
authors: V G
authors: VG
authors: Dubrovskii
authors: Y
authors: Y
authors: Calahorra
authors: S
authors: S
authors: Cohen
authors: D
authors: D
authors: Ritter