title: Engineering the magnetic anisotropy of atomic-scale nanostructure under electric field.
abstract: Atomic-scale magnetic nanostructures are promising candidates for future information processing devices. Utilizing external electric field to manipulate their magnetic properties is an especially thrilling project. Here, by carefully identifying the different contributions of each atomic orbital to the magnetic anisotropy energy (MAE) of the ferromagnetic metal films, we argue that it is possible to engineer both the MAE and the magnetic response to the electric field of atomic-scale magnetic nanostructures. Taking the iron monolayer as a matrix, we propose several interesting iron nanostructures with dramatically different magnetic properties. Such nanostructures could exhibit a strong magnetoelectric effect. Our work may open new avenues to the artificial design of electrically controlled magnetic devices.
authors: Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, People's Republic of China.
authors: Wanjiao
authors: W
authors: Zhu
authors: Hang-Chen
authors: HC
authors: Ding
authors: Wen-Yi
authors: WY
authors: Tong
authors: Shi-Jing
authors: SJ
authors: Gong
authors: Xiangang
authors: X
authors: Wan
authors: Chun-Gang
authors: CG
authors: Duan