title: A 90° fair circular waveguide bend.
abstract: We propose a synthesis method to design a 90° bent fair circular waveguide TE01 mode transition based on the non-uniform rational B-spline technique. The transition by this method has advantages of small geometry, high transmission with wide band and high profile fairness. An example of design of such a transition is presented. The simulation shows that the transition exhibits a transmission as high as 99.3% at the central frequency 35 GHz and has a bandwidth of 16.7% when keeping the transmission over 95%. Furthermore, the profile is extremely fair, which meets the requirements to decrease the geometry errors between actual device and its design, to reduce the machining difficulty in the machining process. The hot test data indicate that good transmission of the TE01 mode is obtained.
authors: The Key Laboratory of Cognitive Radio and Information Processing, Ministry of Education, Guilin University of Electronic Technology, Guilin, Guangxi 541004, People's Republic of China.
authors: Xin-hua
authors: XH
authors: Yu
authors: The Key Laboratory of Cognitive Radio and Information Processing, Ministry of Education, Guilin University of Electronic Technology, Guilin, Guangxi 541004, People's Republic of China.
authors: Ji-liang
authors: JL
authors: Deng
authors: The Key Laboratory of Cognitive Radio and Information Processing, Ministry of Education, Guilin University of Electronic Technology, Guilin, Guangxi 541004, People's Republic of China.
authors: Wei-ping
authors: WP
authors: Cao
authors: Guangxi University of Science and Technology, Liuzhou, Guangxi 545006, People's Republic of China.
authors: Si-min
authors: SM
authors: Li
authors: The Key Laboratory of Cognitive Radio and Information Processing, Ministry of Education, Guilin University of Electronic Technology, Guilin, Guangxi 541004, People's Republic of China.
authors: Xi
authors: X
authors: Gao
authors: The Key Laboratory of Cognitive Radio and Information Processing, Ministry of Education, Guilin University of Electronic Technology, Guilin, Guangxi 541004, People's Republic of China.
authors: Yan-nan
authors: YN
authors: Jiang