title: Scanning capacitance microscopy registration of buried atomic-precision donor devices.
abstract: We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical challenge in completing atomic-precision nanoelectronic devices is to accurately align mesoscopic metal contacts to the STM defined nanostructures. Utilizing the SCMs ability to image buried dopant nanostructures, we have developed a technique by which we are able to position metal electrodes on the surface to form contacts to underlying STM fabricated donor nanostructures with a measured accuracy of 300 nm. Low temperature (T = 4 K) transport measurements confirm successful placement of the contacts to the donor nanostructures.
authors: E
authors: E
authors: Bussmann
authors: M
authors: M
authors: Rudolph
authors: G S
authors: GS
authors: Subramania
authors: S
authors: S
authors: Misra
authors: S M
authors: SM
authors: Carr
authors: E
authors: E
authors: Langlois
authors: J
authors: J
authors: Dominguez
authors: T
authors: T
authors: Pluym
authors: M P
authors: MP
authors: Lilly
authors: M S
authors: MS
authors: Carroll