title: Highly air stable passivation of graphene based field effect devices.
abstract: The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in ambient atmosphere. This is achieved by selecting proper seed layer prior to deposition of encapsulation layer. The passivated devices are also demonstrated to be robust towards the exposure to chemicals and heat treatments, typically used during device fabrication. Additionally, the passivation of high stability and reproducible characteristics is also shown for functional devices like integrated graphene based inverters.
authors: Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany. abhaysagade03@gmail.com neumaier@amo.de.
authors: Abhay A
authors: AA
authors: Sagade
authors: Daniel
authors: D
authors: Neumaier
authors: Daniel
authors: D
authors: Schall
authors: Martin
authors: M
authors: Otto
authors: Amaia
authors: A
authors: Pesquera
authors: Alba
authors: A
authors: Centeno
authors: Amaia Zurutuza
authors: AZ
authors: Elorza
authors: Heinrich
authors: H
authors: Kurz