title: Transfer of self-aligned spacer patterns for single-digit nanofabrication.
abstract: We report the transfer of sub-10 nm half-pitch grating patterns created through a combination of block copolymer directed self-assembly and sidewall spacer-based self-aligned double patterning into Si substrates. Low substrate bias reactive ion etching of TiOx conformally deposited onto carbon mandrels using atomic layer deposition renders distinct, pitch-halved spacers with minimal etch byproduct redeposition. Independent spacer and mandrel width control and the use of an underlying CrNx hard mask deposited by reactive sputtering facilitates etching of Si lines with low roughness and fine placement control. The insights into pattern transfer presented here are directly applicable to the fabrication of rectangular bit pattern nanoimprint templates at densities above 1.5 Td in(-2).
authors: HGST, a Western Digital Co., 3403 Yerba Buena Road, San Jose, CA 95135, USA.
authors: Gregory S
authors: GS
authors: Doerk
authors: He
authors: H
authors: Gao
authors: Lei
authors: L
authors: Wan
authors: Jeff
authors: J
authors: Lille
authors: K C
authors: KC
authors: Patel
authors: Yves-Andre
authors: YA
authors: Chapuis
authors: Ricardo
authors: R
authors: Ruiz
authors: Thomas R
authors: TR
authors: Albrecht