title: Discrete states and carrier-phonon scattering in quantum dot population dynamics.
abstract: The influence of the growth conditions of multilayer CdTe/ZnTe quantum dots (QDs) on Si substrate upon their carrier dynamics is studied using intensity integration and broadening photoluminescence. The unusual temperature dependence of the line broadening is explained using a model for interband transitions that involves a lowest discrete electronic state (1Se) with different discrete hole states (1S3/2 and 2S3/2) and a 1P transition. These transitions are expected to play a critical role in both the thermally activated energy and the line broadening of the QDs. We also demonstrate that a thermally activated transition between two different states occurs with band low-temperature quenching, with values separated by 5.8-16 meV. The main nonradiative process is thermal escape assisted by carrier scattering via emission of longitudinal phonons through the hole states at high temperature, with an average energy of 19.3-20.2 meV.
authors: Department of Physics, Chonbuk National University, Jeonju 561-756, Republic of Korea.
authors: Minh Tan
authors: MT
authors: Man
authors: Department of Physics, Chonbuk National University, Jeonju 561-756, Republic of Korea.
authors: Hong Seok
authors: HS
authors: Lee
references: Phys Rev B Condens Matter. 1990 Dec 15;42(17):11218-11231
references: 9995407
references: Opt Express. 2014 Feb 24;22(4):4115-22
references: 24663734
references: Phys Rev B Condens Matter. 1986 Apr 15;33(8):5512-5516
references: 9939057
references: Phys Rev Lett. 2003 Jun 27;90(25 Pt 1):257404
references: 12857165
references: Science. 2000 Feb 11;287(5455):1011-3
references: 10669406