title: Raman characterization of defects and dopants in graphene.
abstract: In this article we review Raman studies of defects and dopants in graphene as well as the importance of both for device applications. First a brief overview of Raman spectroscopy of graphene is presented. In the following section we discuss the Raman characterization of three defect types: point defects, edges, and grain boundaries. The next section reviews the dependence of the Raman spectrum on dopants and highlights several common doping techniques. In the final section, several device applications are discussed which exploit doping and defects in graphene. Generally defects degrade the figures of merit for devices, such as carrier mobility and conductivity, whereas doping provides a means to tune the carrier concentration in graphene thereby enabling the engineering of novel material systems. Accurately measuring both the defect density and doping is critical and Raman spectroscopy provides a powerful tool to accomplish this task.
authors: Institute of Optics, University of Rochester, Rochester, NY 14627, USA.
authors: Ryan
authors: R
authors: Beams
authors: Luiz
authors: L
authors: Gustavo Cançado
authors: Lukas
authors: L
authors: Novotny