title: Vacancy-induced ferromagnetism of MoS2 nanosheets.
abstract: Outstanding magnetic properties are highly desired for two-dimensional ultrathin semiconductor nanosheets. Here, we propose a phase incorporation strategy to induce robust room-temperature ferromagnetism in a nonmagnetic MoS2 semiconductor. A two-step hydrothermal method was used to intentionally introduce sulfur vacancies in a 2H-MoS2 ultrathin nanosheet host, which prompts the transformation of the surrounding 2H-MoS2 local lattice into a trigonal (1T-MoS2) phase. 25% 1T-MoS2 phase incorporation in 2H-MoS2 nanosheets can enhance the electron carrier concentration by an order, introduce a Mo(4+) 4d energy state within the bandgap, and create a robust intrinsic ferromagnetic response of 0.25 μB/Mo by the exchange interactions between sulfur vacancy and the Mo(4+) 4d bandgap state at room temperature. This design opens up new possibility for effective manipulation of exchange interactions in two-dimensional nanostructures.
authors: National Synchrotron Radiation Laboratory, University of Science and Technology of China , Hefei 230029, P. R. China.
authors: Liang
authors: L
authors: Cai
authors: Jingfu
authors: J
authors: He
authors: Qinghua
authors: Q
authors: Liu
authors: Tao
authors: T
authors: Yao
authors: Lin
authors: L
authors: Chen
authors: Wensheng
authors: W
authors: Yan
authors: Fengchun
authors: F
authors: Hu
authors: Yong
authors: Y
authors: Jiang
authors: Yidong
authors: Y
authors: Zhao
authors: Tiandou
authors: T
authors: Hu
authors: Zhihu
authors: Z
authors: Sun
authors: Shiqiang
authors: S
authors: Wei