title: Formation and nature of InGaN quantum dots in GaN nanowires.
abstract: InGaN/GaN disk-in-nanowire heterostructures on silicon substrates have emerged as important gain media for the realization of visible light sources. The nature of quantum confinement in the disks is largely unknown. From the unique nature of the measured temperature dependence of the radiative lifetime and direct transmission electron microscopy, it is evident that such self-organized islands (disks) behave as quantum dots. This is confirmed by the observation of single photon emission from a single disk-in-nanowire and the presence of a sharp minimum in the line width enhancement factor of edge emitting lasers having the InGaN disks as the gain media.
authors: Center for Photonics and Multiscale Nanomaterials and ‡Department of Electrical Engineering and Computer Science, University of Michigan , 1301 Beal Avenue, Ann Arbor, Michigan 48109, United States.
authors: Saniya
authors: S
authors: Deshpande
authors: Thomas
authors: T
authors: Frost
authors: Lifan
authors: L
authors: Yan
authors: Shafat
authors: S
authors: Jahangir
authors: Arnab
authors: A
authors: Hazari
authors: Xianhe
authors: X
authors: Liu
authors: Joanna
authors: J
authors: Mirecki-Millunchick
authors: Zetian
authors: Z
authors: Mi
authors: Pallab
authors: P
authors: Bhattacharya
keywords: GaN nanowire; Molecular beam epitaxy; nanowire laser; quantum disk-in-nanowire; quantum dots; single-photon emission