title: Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates.
abstract: We present the results of the study of the correlation between the electrical and structural properties of individual GaAs nanowires measured in their as-grown geometry. The resistance and the effective charge carrier mobility were extracted for several nanowires, and subsequently, the same nano-objects were investigated using X-ray nanodiffraction. This revealed a number of perfectly stacked zincblende and twinned zincblende units separated by axial interfaces. Our results suggest a correlation between the electrical parameters and the number of intrinsic interfaces.
authors: ESRF - The European Synchrotron , 38043 Grenoble, France.
authors: Genziana
authors: G
authors: Bussone
authors: Heiko
authors: H
authors: Schäfer-Eberwein
authors: Emmanouil
authors: E
authors: Dimakis
authors: Andreas
authors: A
authors: Biermanns
authors: Dina
authors: D
authors: Carbone
authors: Abbes
authors: A
authors: Tahraoui
authors: Lutz
authors: L
authors: Geelhaar
authors: Peter Haring
authors: PH
authors: Bolívar
authors: Tobias U
authors: TU
authors: Schülli
authors: Ullrich
authors: U
authors: Pietsch
keywords: X-ray nanodiffraction; axial interfaces; correlation; electrical characterization; plastic deformation; single GaAs nanowires