title: Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations.
abstract: Monolayer transition metal dichalcogenides are materials with an atomic structure complementary to graphene but diverse properties, including direct energy bandgaps, which makes them intriguing candidates for optoelectronic devices. Various approaches have been demonstrated for the growth of molybdenum disulphide (MoS2) on insulating substrates, but to date, growth of isolated crystalline flakes has been demonstrated at random locations only. Here we use patterned seeds of molybdenum source material to grow flakes of MoS2 at predetermined locations with micrometre-scale resolution. MoS2 flakes are predominantly monolayers with high material quality, as confirmed by atomic force microscopy, transmission electron microscopy and Raman and photoluminescence spectroscopy. As the monolayer flakes are isolated at predetermined locations, transistor fabrication requires only a single lithographic step. Device measurements exhibit carrier mobility and on/off ratio that exceed 10 cm(2) V(-1) s(-1) and 10(6), respectively. The technique provides a path for in-depth physical analysis of monolayer MoS2 and fabrication of MoS2-based integrated circuits.
authors: 1] Department of Physics and Astronomy, University of Pennsylvania, 209S 33rd Street, Philadelphia, Pennsylvania 19104 6396, USA [2] Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440 746, South Korea.
authors: Gang Hee
authors: GH
authors: Han
authors: Department of Physics and Astronomy, University of Pennsylvania, 209S 33rd Street, Philadelphia, Pennsylvania 19104 6396, USA.
authors: Nicholas J
authors: NJ
authors: Kybert
authors: Department of Physics and Astronomy, University of Pennsylvania, 209S 33rd Street, Philadelphia, Pennsylvania 19104 6396, USA.
authors: Carl H
authors: CH
authors: Naylor
authors: Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 6272, USA.
authors: Bum Su
authors: BS
authors: Lee
authors: Department of Physics and Astronomy, University of Pennsylvania, 209S 33rd Street, Philadelphia, Pennsylvania 19104 6396, USA.
authors: Jinglei
authors: J
authors: Ping
authors: Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 6272, USA.
authors: Joo Hee
authors: JH
authors: Park
authors: Nano/Bio Interface Center, University of Pennsylvania, Philadelphia, Pennsylvania 19104 6272, USA.
authors: Jisoo
authors: J
authors: Kang
authors: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440 746, South Korea.
authors: Si Young
authors: SY
authors: Lee
authors: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440 746, South Korea.
authors: Young Hee
authors: YH
authors: Lee
authors: Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 6272, USA.
authors: Ritesh
authors: R
authors: Agarwal
authors: 1] Department of Physics and Astronomy, University of Pennsylvania, 209S 33rd Street, Philadelphia, Pennsylvania 19104 6396, USA [2] Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 6272, USA [3] Nano/Bio Interface Center, University of Pennsylvania, Philadelphia, Pennsylvania 19104 6272, USA.
authors: A T Charlie
authors: AT
authors: Johnson
mesh_terms: D003460:Crystallization; D004220:Disulfides / Q000737:chemistry*; D004581:Electronics; D018625:Microscopy, Atomic Force; D046529:Microscopy, Electron, Transmission; D008982:Molybdenum / Q000737:chemistry*; D055620:Optical Phenomena
chemical_list: D004220:Disulfides; D008982:Molybdenum; C082964:molybdenum disulfide