title: Simultaneous integration of different nanowires on single textured Si (100) substrates.
abstract: By applying a texturing process to silicon substrates, we demonstrate the possibility to integrate III-V nanowires on (100) oriented silicon substrates. Nanowires are found to grow perpendicular to the {111}-oriented facets of pyramids formed by KOH etching. Having control of the substrate orientation relative to the incoming fluxes enables not only the growth of nanowires on selected facets of the pyramids but also studying the influence of the fluxes on the nanowire nucleation and growth. Making use of these findings, we show that nanowires with different dimensions can be grown on the same sample and, additionally, it is even possible to integrate nanowires of different semiconductor materials, for example, GaAs and InAs, on the very same sample.
authors: Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH , 52425 Jülich, Germany.
authors: Torsten
authors: T
authors: Rieger
authors: Daniel
authors: D
authors: Rosenbach
authors: Gregor
authors: G
authors: Mussler
authors: Thomas
authors: T
authors: Schäpers
authors: Detlev
authors: D
authors: Grützmacher
authors: Mihail Ion
authors: MI
authors: Lepsa
mesh_terms: D000327:Adsorption; D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008422:Materials Testing; D053761:Nanocomposites / Q000737:chemistry / Q000648:ultrastructure; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D018511:Systems Integration
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide; D012825:Silicon
keywords: III−V on silicon; MBE; Nanowires; simultaneous integration; textured surface