title: High yield fabrication of hollow vesica-like silicon based on the Kirkendall effect and its application to energy storage.
abstract: Recently, a unique process based on the Kirkendall effect was employed to generate hollow nanostructures with a wide variety of materials. However, a similar hollow structure of silicon based on the fabrication mechanism of the Kirkendall effect is still not proposed. Here, we provide an extensible synthesis method for the high yield fabrication of a uniform vesica-like hollow Si material from SiO2 based on the Kirkendall effect in a molten salt reduction process. Significantly, without further modification, the as-prepared hollow vesica-like Si exhibits a high electrochemical storage capacity and long cycling properties (∼712 mA h g(-1) at 0.36 A g(-1) over 200 cycles).
authors: Hefei National Laboratory for Physical Science at Micro-scale, Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China. ychzhu@ustc.edu.cn.
authors: Jianwen
authors: J
authors: Liang
authors: Xiaona
authors: X
authors: Li
authors: Qiushi
authors: Q
authors: Cheng
authors: Zhiguo
authors: Z
authors: Hou
authors: Long
authors: L
authors: Fan
authors: Yongchun
authors: Y
authors: Zhu
authors: Yitai
authors: Y
authors: Qian