title: Coherent spin control of a nanocavity-enhanced qubit in diamond.
abstract: A central aim of quantum information processing is the efficient entanglement of multiple stationary quantum memories via photons. Among solid-state systems, the nitrogen-vacancy centre in diamond has emerged as an excellent optically addressable memory with second-scale electron spin coherence times. Recently, quantum entanglement and teleportation have been shown between two nitrogen-vacancy memories, but scaling to larger networks requires more efficient spin-photon interfaces such as optical resonators. Here we report such nitrogen-vacancy-nanocavity systems in the strong Purcell regime with optical quality factors approaching 10,000 and electron spin coherence times exceeding 200 μs using a silicon hard-mask fabrication process. This spin-photon interface is integrated with on-chip microwave striplines for coherent spin control, providing an efficient quantum memory for quantum networks.
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
authors: Luozhou
authors: L
authors: Li
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
authors: Tim
authors: T
authors: Schröder
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
authors: Edward H
authors: EH
authors: Chen
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
authors: Michael
authors: M
authors: Walsh
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
authors: Igal
authors: I
authors: Bayn
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
authors: Jordan
authors: J
authors: Goldstein
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
authors: Ophir
authors: O
authors: Gaathon
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
authors: Matthew E
authors: ME
authors: Trusheim
authors: Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA.
authors: Ming
authors: M
authors: Lu
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
authors: Jacob
authors: J
authors: Mower
authors: Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA.
authors: Mircea
authors: M
authors: Cotlet
authors: Element Six, 3901 Burton Drive, Santa Clara, California 95054, USA.
authors: Matthew L
authors: ML
authors: Markham
authors: Element Six, 3901 Burton Drive, Santa Clara, California 95054, USA.
authors: Daniel J
authors: DJ
authors: Twitchen
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
authors: Dirk
authors: D
authors: Englund