title: Next generation device grade silicon-germanium on insulator.
abstract: High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over large areas. The proposed structures avoid the problem of laterally graded SiGe compositions, caused by preferential Si rich solid formation, encountered in straight SiGe wires by providing radiating elements distributed along the structures. This method enables the fabrication of multiple single crystal silicon-germanium-on-insulator layers of different compositions, on the same Si wafer, using only a single deposition process and a single anneal process, simply by modifying the structural design and/or the anneal temperature. This facilitates a host of device designs, within a relatively simple growth environment, as compared to the complexities of other methods, and also offers flexibility in device designs within that growth environment.
authors: Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, UK.
authors: Callum G
authors: CG
authors: Littlejohns
authors: Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, UK.
authors: Milos
authors: M
authors: Nedeljkovic
authors: The Surface Analysis Laboratory, Department of Mechanical Engineering Sciences, University of Surrey, Guildford, Surrey, GU2 7XH, UK.
authors: Christopher F
authors: CF
authors: Mallinson
authors: The Surface Analysis Laboratory, Department of Mechanical Engineering Sciences, University of Surrey, Guildford, Surrey, GU2 7XH, UK.
authors: John F
authors: JF
authors: Watts
authors: Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, UK.
authors: Goran Z
authors: GZ
authors: Mashanovich
authors: Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, UK.
authors: Graham T
authors: GT
authors: Reed
authors: Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, UK.
authors: Frederic Y
authors: FY
authors: Gardes
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