title: Interfacial exchange coupling induced anomalous anisotropic magnetoresistance in epitaxial γ'-Fe₄N/CoN bilayers.
abstract: Anisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ'-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ'-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ'-Fe4N layer and interfacial spin scattering.
authors: Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Faculty of Science, Tianjin University , Tianjin 300072, China.
authors: Zirun
authors: Z
authors: Li
authors: Wenbo
authors: W
authors: Mi
authors: Xiaocha
authors: X
authors: Wang
authors: Xixiang
authors: X
authors: Zhang
keywords: Fe4N; anisotropic magnetoresistance; bilayer; exchange bias; facing-target sputtering