title: Enhanced electrical transparency by ultrathin LaAlO3 insertion at oxide metal/semiconductor heterointerfaces.
abstract: We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO3 surfaces. This field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.
authors: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States.
authors: Takeaki
authors: T
authors: Yajima
authors: Makoto
authors: M
authors: Minohara
authors: Christopher
authors: C
authors: Bell
authors: Hiroshi
authors: H
authors: Kumigashira
authors: Masaharu
authors: M
authors: Oshima
authors: Harold Y
authors: HY
authors: Hwang
authors: Yasuyuki
authors: Y
authors: Hikita
keywords: Interface dipole; LaAlO3; Schottky junction; perovskite oxide; polar discontinuity