title: Insight into spin transport in oxide heterostructures from interface-resolved magnetic mapping.
abstract: At interfaces between complex oxides, electronic, orbital and magnetic reconstructions may produce states of matter absent from the materials involved, offering novel possibilities for electronic and spintronic devices. Here we show that magnetic reconstruction has a strong influence on the interfacial spin selectivity, a key parameter controlling spin transport in magnetic tunnel junctions. In epitaxial heterostructures combining layers of antiferromagnetic LaFeO(3) (LFO) and ferromagnetic La(0.7)Sr(0.3)MnO(3) (LSMO), we find that a net magnetic moment is induced in the first few unit planes of LFO near the interface with LSMO. Using X-ray photoemission electron microscopy, we show that the ferromagnetic domain structure of the manganite electrodes is imprinted into the antiferromagnetic tunnel barrier, endowing it with spin selectivity. Finally, we find that the spin arrangement resulting from coexisting ferromagnetic and antiferromagnetic interactions strongly influences the tunnel magnetoresistance of LSMO/LFO/LSMO junctions through competing spin-polarization and spin-filtering effects.
authors: Unité Mixte de Physique CNRS/Thales, 1 Avenue A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France.
authors: F Y
authors: FY
authors: Bruno
authors: Unité Mixte de Physique CNRS/Thales, 1 Avenue A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France.
authors: M N
authors: MN
authors: Grisolia
authors: Unité Mixte de Physique CNRS/Thales, 1 Avenue A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France.
authors: C
authors: C
authors: Visani
authors: Helmholtz-Zentrum-Berlin für Materialen und Energie, Albert-Einstein-Strasse 15, 12489 Berlin, Germany.
authors: S
authors: S
authors: Valencia
authors: 1] GFMC, Departamento Física Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense de Madrid, Sor Juana Inés de la Cruz, 3, 28049 Madrid, Spain [3] Materials Science &Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors: M
authors: M
authors: Varela
authors: 1] Helmholtz-Zentrum-Berlin für Materialen und Energie, Albert-Einstein-Strasse 15, 12489 Berlin, Germany [2] Institut für Experimentalphysik/Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum, Germany.
authors: R
authors: 0000000293354929
authors: R
authors: Abrudan
authors: 1] GFMC, Departamento Física Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense de Madrid, Sor Juana Inés de la Cruz, 3, 28049 Madrid, Spain.
authors: J
authors: J
authors: Tornos
authors: 1] GFMC, Departamento Física Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense de Madrid, Sor Juana Inés de la Cruz, 3, 28049 Madrid, Spain.
authors: A
authors: A
authors: Rivera-Calzada
authors: Helmholtz-Zentrum-Berlin für Materialen und Energie, Albert-Einstein-Strasse 15, 12489 Berlin, Germany.
authors: A A
authors: AA
authors: Ünal
authors: Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996, USA.
authors: S J
authors: SJ
authors: Pennycook
authors: 1] GFMC, Departamento Física Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense de Madrid, Sor Juana Inés de la Cruz, 3, 28049 Madrid, Spain.
authors: Z
authors: Z
authors: Sefrioui
authors: 1] GFMC, Departamento Física Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense de Madrid, Sor Juana Inés de la Cruz, 3, 28049 Madrid, Spain.
authors: C
authors: C
authors: Leon
authors: Unité Mixte de Physique CNRS/Thales, 1 Avenue A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France.
authors: J E
authors: JE
authors: Villegas
authors: 1] GFMC, Departamento Física Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense de Madrid, Sor Juana Inés de la Cruz, 3, 28049 Madrid, Spain.
authors: J
authors: J
authors: Santamaria
authors: Unité Mixte de Physique CNRS/Thales, 1 Avenue A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France.
authors: A
authors: A
authors: Barthélémy
authors: Unité Mixte de Physique CNRS/Thales, 1 Avenue A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France.
authors: M
authors: M
authors: Bibes