title: Continuously tunable electronic structure of transition metal dichalcogenides superlattices.
abstract: Two dimensional transition metal dichalcogenides have very exciting properties for optoelectronic applications. In this work we theoretically investigate and predict that superlattices comprised of MoS2 and WSe2 multilayers possess continuously tunable electronic structure with direct bandgaps. The tunability is controlled by the thickness ratio of MoS2 versus WSe2 of the superlattice. When this ratio goes from 1:2 to 5:1, the dominant K-K direct bandgap is continuously tuned from 0.14 eV to 0.5 eV. The gap stays direct against -0.6% to 2% in-layer strain and up to -4.3% normal-layer compressive strain. The valance and conduction bands are spatially separated. These robust properties suggest that MoS2 and WSe2 multilayer superlattice should be a promising material for infrared optoelectronics.
authors: 1] College of Physics and Electronic Engineering, Institute of Solid State Physics, Sichuan Normal University, Chengdu 610068, China [2] Department of Physics and the Center of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong, China.
authors: Yong-Hong
authors: YH
authors: Zhao
authors: 1] College of Physics and Electronic Engineering, Institute of Solid State Physics, Sichuan Normal University, Chengdu 610068, China [2] Department of Physics, Renmin University of China, Beijing 100872, China [3] Beijing Key Laboratory of Optoelectronic Functional Materials &Micro-nano Devices, Renmin University of China, Beijing 100872, China.
authors: Feng
authors: F
authors: Yang
authors: Department of Physics and the Center of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong, China.
authors: Jian
authors: J
authors: Wang
authors: Centre for the Physics of Materials and Department of Physics, McGill University, 3600 rue University, Montreal PQ, Canada H3A 2T8.
authors: Hong
authors: H
authors: Guo
authors: 1] Department of Physics, Renmin University of China, Beijing 100872, China [2] Beijing Key Laboratory of Optoelectronic Functional Materials &Micro-nano Devices, Renmin University of China, Beijing 100872, China.
authors: Wei
authors: W
authors: Ji