title: Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing.
abstract: Solution-processed organic field effect transistors (OFETs), which are amenable to facile large-area processing methods, have generated significant interest as key elements for use in all-organic electronic applications aimed at realizing low-cost, lightweight, and flexible devices. The low performance levels of n-type solution-processed bottom-contact OFETs unfortunately continue to pose a barrier to their commercialization. In this study, we introduced a combination of CVD-grown graphene source/drain (S/D) electrodes and fullerene (C60) in a solution-processable n-type semiconductor toward the fabrication of n-type bottom-contact OFETs. The C60 coating in the channel region was achieved by modifying the surface of the oxide gate dielectric layer with a phenyl group-terminated self-assembled monolayer (SAM). The graphene and phenyl group in the SAMs induced π-π interactions with C60, which facilitated the formation of a C60 coating. We also investigated the effects of thermal annealing on the reorganization properties and field-effect performances of the overlaying solution-processed C60 semiconductors. We found that thermal annealing of the C60 layer on the graphene surface improved the crystallinity of the face-centered cubic (fcc) phase structure, which improved the OFET performance and yielded mobilities of 0.055 cm(2) V(-1) s(-1). This approach enables the realization of solution-processed C60-based FETs using CVD-grown graphene S/D electrodes via inexpensive and solution-process techniques.
authors: Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Korea. cep@postech.ac.kr.
authors: Yong Jin
authors: YJ
authors: Jeong
authors: Dong-Jin
authors: DJ
authors: Yun
authors: Jaeyoung
authors: J
authors: Jang
authors: Seonuk
authors: S
authors: Park
authors: Tae Kyu
authors: TK
authors: An
authors: Lae Ho
authors: LH
authors: Kim
authors: Se Hyun
authors: SH
authors: Kim
authors: Chan Eon
authors: CE
authors: Park
mesh_terms: D004566:Electrodes; D037741:Fullerenes / Q000737:chemistry*; D006108:Graphite; D018625:Microscopy, Atomic Force; D013696:Temperature
chemical_list: D037741:Fullerenes; D006108:Graphite