title: Tuning the electronic properties of ZnO nanowire field effect transistors via surface functionalization.
abstract: Using in situ field effect transistor (FET) characterization combined with the molecular beam epitaxy technique, we demonstrate a significant depletion of electron charge carriers in single zinc oxide (ZnO) nanowire through the surface modification with molybdenum trioxide (MoO3) and 1, 4, 5, 8, 9, 11-hexaazatriphenylene hexacarbonitrile (HATCN) layers. The electron mobility of ZnO nanowire was found to sharply decrease after the surface modification with MoO3; in contrast, the electron mobility significantly increased after functionalization with HATCN layers. Such depletion of n-type conduction originates from the interfacial charge transfer, corroborated by in situ photoelectron spectroscopy studies. The air exposure effect on MoO(3-) and HATCN-coated ZnO nanowire devices was also investigated.
authors: Cheng
authors: C
authors: Han
authors: Du
authors: D
authors: Xiang
authors: Minrui
authors: M
authors: Zheng
authors: Jiadan
authors: J
authors: Lin
authors: Jianqiang
authors: J
authors: Zhong
authors: Chorng Haur
authors: CH
authors: Sow
authors: Wei
authors: W
authors: Chen