title: Formation of ripples in atomically thin MoS₂ and local strain engineering of electrostatic properties.
abstract: Ripple is a common deformation in two-dimensional materials due to localized strain, which is expected to greatly influence the physical properties. The effects of the ripple deformation in the MoS2 layer on their physics, however, are rarely addressed experimentally. We here grow atomically thin MoS2 nanostructures by employing a vapor phase deposition method without any catalyst and observed the ripples in MoS2 nanostructures. The MoS2 ripples exhibit quasi-periodical ripple structures in the MoS2 surface. The heights of the ripples vary from several angstroms to tens of nanometers and the wavelength is in the range of several hundred nanometers. The growth mechanism of rippled MoS2 nanostructures is elucidated. We have also simultaneously investigated the electrostatic properties of MoS2 ripples by using Kelvin probe force microscopy, which shows inhomogeneous surface potential and charge distributions for MoS2 ripple nanostructures with different local strains.
authors: Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan 411105, People's Republic of China. Laboratory for Quantum Engineering and Micro-Nano Energy Technology and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Hunan 411105, People's Republic of China.
authors: Siwei
authors: S
authors: Luo
authors: Guolin
authors: G
authors: Hao
authors: Yinping
authors: Y
authors: Fan
authors: Liangzhi
authors: L
authors: Kou
authors: Chaoyu
authors: C
authors: He
authors: Xiang
authors: X
authors: Qi
authors: Chao
authors: C
authors: Tang
authors: Jin
authors: J
authors: Li
authors: Kai
authors: K
authors: Huang
authors: Jianxin
authors: J
authors: Zhong