title: Improving the quality of GaN crystals by using graphene or hexagonal boron nitride nanosheets substrate.
abstract: The progress in nitrides technology is widely believed to be limited and hampered by the lack of high-quality gallium nitride wafers. Though various epitaxial techniques like epitaxial lateral overgrowth and its derivatives have been used to reduce defect density, there is still plenty of room for the improvement of gallium nitride crystal. Here, we report graphene or hexagonal boron nitride nanosheets can be used to improve the quality of GaN crystal using hydride vapor phase epitaxy methods. These nanosheets were directly deposited on the substrate that is used for the epitaxial growth of GaN crystal. Systematic characterizations of the as-obtained crystal show that quality of GaN crystal is greatly improved. The fabricated light-emitting diodes using the as-obtained GaN crystals emit strong electroluminescence under room illumination. This simple yet effective technique is believed to be applicable in metal-organic chemical vapor deposition systems and will find wide applications on other crystal growth.
authors: State Key Lab of Crystal Materials, Shandong University , Jinan 250100, P. R. China.
authors: Lei
authors: L
authors: Zhang
authors: Xianlei
authors: X
authors: Li
authors: Yongliang
authors: Y
authors: Shao
authors: Jiaoxian
authors: J
authors: Yu
authors: Yongzhong
authors: Y
authors: Wu
authors: Xiaopeng
authors: X
authors: Hao
authors: Zhengmao
authors: Z
authors: Yin
authors: Yuanbin
authors: Y
authors: Dai
authors: Yuan
authors: Y
authors: Tian
authors: Qin
authors: Q
authors: Huo
authors: Yinan
authors: Y
authors: Shen
authors: Zhen
authors: Z
authors: Hua
authors: Baoguo
authors: B
authors: Zhang
keywords: GaN; boron nitride nanosheets; graphene; hydride vapor phase epitaxy; light-emitting diodes