title: Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices.
abstract: The dynamics of resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Our thorough experimental analysis and numerical simulations revealed that the resistance change upon a switching bias voltage pulse exhibits a strongly non-exponential behaviour yielding markedly different response times at different bias levels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale non-volatile memory cells with stable switching ratios, high endurance as well as fast response to write/erase, and an outstanding stability against read operations at technologically optimal bias and current levels.
authors: Department of Physics, Budapest University of Technology and Economics, Budafoki ut 8, 1111 Budapest, Hungary. gubicza@dept.phy.bme.hu.
authors: Agnes
authors: A
authors: Gubicza
authors: Miklós
authors: M
authors: Csontos
authors: András
authors: A
authors: Halbritter
authors: György
authors: G
authors: Mihály