title: High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors.
abstract: Dual-gated PbS nanocrystal field-effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm(2) V(-1) s(-1) ) and the high on/off ratio (10(5) -10(6) ), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.
authors: Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands; Department of Advanced Materials Science, School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.
authors: Mohamad Insan
authors: MI
authors: Nugraha
authors: Roger
authors: R
authors: Häusermann
authors: Satria Zulkarnaen
authors: SZ
authors: Bisri
authors: Hiroyuki
authors: H
authors: Matsui
authors: Mykhailo
authors: M
authors: Sytnyk
authors: Wolfgang
authors: W
authors: Heiss
authors: Jun
authors: J
authors: Takeya
authors: Maria Antonietta
authors: MA
authors: Loi
keywords: ambipolar transistors; colloidal nanocrystals; density of trap states; field effect transistors