title: Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources.
abstract: Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operation voltages. Here we show that these challenges can be addressed by utilizing nitrogen (N) polar Al(Ga)N nanowires grown directly on Si substrate. By carefully tuning the synthesis conditions, a record IQE of 80% can be realized with N-polar AlN nanowires, which is nearly ten times higher compared to high quality planar AlN. The first 210 nm emitting AlN nanowire light emitting diodes (LEDs) were achieved, with a turn on voltage of about 6 V, which is significantly lower than the commonly observed 20 - 40 V. This can be ascribed to both efficient Mg doping by controlling the nanowire growth rate and N-polarity induced internal electrical field that favors hole injection. In the end, high performance N-polar AlGaN nanowire LEDs with emission wavelengths covering the UV-B/C bands were also demonstrated.
authors: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9.
authors: S
authors: S
authors: Zhao
authors: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9.
authors: A T
authors: AT
authors: Connie
authors: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9.
authors: M H T
authors: MH
authors: Dastjerdi
authors: Department of Physics, McGill University, 3600 University Street, Montreal, Quebec, Canada H3A 2T8.
authors: X H
authors: XH
authors: Kong
authors: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9.
authors: Q
authors: Q
authors: Wang
authors: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9.
authors: M
authors: M
authors: Djavid
authors: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9.
authors: S
authors: S
authors: Sadaf
authors: Facility for Electron Microscopy Research, McGill University, 3640 University Street, Montreal, Quebec H3A 0C7.
authors: X D
authors: XD
authors: Liu
authors: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9.
authors: I
authors: I
authors: Shih
authors: Department of Physics, McGill University, 3600 University Street, Montreal, Quebec, Canada H3A 2T8.
authors: H
authors: H
authors: Guo
authors: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9.
authors: Z
authors: Z
authors: Mi