title: Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles.
abstract: We use line-of-sight quadrupole mass spectrometry to monitor the spontaneous formation of GaN nanowires on Si during molecular beam epitaxy. We find that the temporal evolution of nanowire ensembles is well described by a double logistic function. The analysis of the temporal evolution of nanowire ensembles, prepared under a wide variety of growth conditions, allows us to construct a growth diagram that can be used to predict the average delay time that precedes nanowire formation.
authors: Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany.
authors: Sergio
authors: S
authors: Fernández-Garrido
authors: Johannes K
authors: JK
authors: Zettler
authors: Lutz
authors: L
authors: Geelhaar
authors: Oliver
authors: O
authors: Brandt
keywords: Semiconductor; growth model; incubation time; nanocolumn; nucleation; sigmoidal growth