title: Time-resolved photo and radio-luminescence studies demonstrate the possibility of using InGaN/GaN quantum wells as fast scintillators.
abstract: In the recent publication by Hospodková et al, the authors investigate III-N quantum well structures as potential fast scintillators (Hospodková et al 2014 Nanotechnology 25 455501). The InGaN/GaN quantum well structures are grown using metal organic vapour phase epitaxy on a sapphire substrate and the fast carrier decay times are characterized by time resolved photo and radioluminescence.
authors: Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87108, USA.
authors: G
authors: G
authors: Balakrishnan