title: Tunable piezoresistivity of nanographene films for strain sensing.
abstract: Graphene-based strain sensors have attracted much attention recently. Usually, there is a trade-off between the sensitivity and resistance of such devices, while larger resistance devices have higher energy consumption. In this paper, we report a tuning of both sensitivity and resistance of graphene strain sensing devices by tailoring graphene nanostructures. For a typical piezoresistive nanographene film with a sheet resistance of ∼100 KΩ/□, a gauge factor of more than 600 can be achieved, which is 50× larger than those in previous studies. These films with high sensitivity and low resistivity were also transferred on flexible substrates for device integration for force mapping. Each device shows a high gauge factor of more than 500, a long lifetime of more than 10(4) cycles, and a fast response time of less than 4 ms, suggesting a great potential in electronic skin applications.
authors: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
authors: Jing
authors: J
authors: Zhao
authors: Guole
authors: G
authors: Wang
authors: Rong
authors: R
authors: Yang
authors: Xiaobo
authors: X
authors: Lu
authors: Meng
authors: M
authors: Cheng
authors: Congli
authors: C
authors: He
authors: Guibai
authors: G
authors: Xie
authors: Jianling
authors: J
authors: Meng
authors: Dongxia
authors: D
authors: Shi
authors: Guangyu
authors: G
authors: Zhang
keywords: artificial electronic skin; controllable size; graphene; tunneling effect; ultrasensitivity