title: Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures.
abstract: Semiconducting transition metal dichalchogenides (TMDs) are a family of van der Waals bonded materials that have recently received interest as alternative substrates to hexagonal boron nitride (hBN) for graphene, as well as for components in novel graphene-based device heterostructures. We elucidate the local structural and electronic properties of graphene on TMD heterostructures through scanning tunneling microscopy and spectroscopy measurements. We find that crystalline defects intrinsic to TMDs induce substantial electronic scattering and charge carrier density fluctuations in the graphene. These signatures of local disorder explain the significant degradation of graphene device mobilities using TMD substrates, particularly compared to similar graphene on hBN devices.
authors: Physics Department, University of Arizona , Tucson, Arizona 85721, United States.
authors: Matthew
authors: M
authors: Yankowitz
authors: Stefano
authors: S
authors: Larentis
authors: Kyounghwan
authors: K
authors: Kim
authors: Jiamin
authors: J
authors: Xue
authors: Devin
authors: D
authors: McKenzie
authors: Shengqiang
authors: S
authors: Huang
authors: Marina
authors: M
authors: Paggen
authors: Mazhar N
authors: MN
authors: Ali
authors: Robert J
authors: RJ
authors: Cava
authors: Emanuel
authors: E
authors: Tutuc
authors: Brian J
authors: BJ
authors: LeRoy
mesh_terms: D004553:Electric Conductivity; D004579:Electron Transport; D006108:Graphite / Q000737:chemistry*; D008422:Materials Testing; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D028561:Transition Elements / Q000737:chemistry*
chemical_list: D028561:Transition Elements; D006108:Graphite
keywords: Scanning tunneling microscopy/spectroscopy; defects; graphene; scattering; transition metal dichalchogenides