title: Vacancy associates-rich ultrathin nanosheets for high performance and flexible nonvolatile memory device.
abstract: On the road of innovation in modern information technology, resistive switching random access memory (RRAM) has been considered to be the best potential candidate to replace the conventional Si-based technologies. In fact, the key prerequisite of high storage density and low power consumption as well as flexibility for the tangible next generation of nonvolatile memories has stimulated extensive research into RRAM. Herein, we highlight an inorganic graphene analogue, ultrathin WO3·H2O nanosheets with only 2-3 nm thickness, as a promising material to construct a high performance and flexible RRAM device. The abundant vacancy associates in the ultrathin nanosheets, revealed by the positron annihilation spectra, act not only carrier reservoir to provide carriers but also capture center to trap the actived Cu(2+) for the formation of conductive filaments, which synergistically realize the resistive switching memory with low operating voltage (+1.0 V/-1.14 V) and large resistance ON/OFF ratio (>10(5)). This ultrathin-nanosheets-based RRAM device also shows long retention time (>10(5) s), good endurance (>5000 cycles), and excellent flexibility. The finding of the existence of distinct defects in ultrathin nanosheets undoubtedly leads to an atomic level deep understanding of the underlying nature of the resistive switching behavior, which may serve as a guide to improve the performances and promote the rapid development of RRAM.
authors: Hefei National Laboratory for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science & Technology of China , Hefei, Anhui 230026, P. R. China.
authors: Lin
authors: L
authors: Liang
authors: Kun
authors: K
authors: Li
authors: Chong
authors: C
authors: Xiao
authors: Shaojuan
authors: S
authors: Fan
authors: Jiao
authors: J
authors: Liu
authors: Wenshuai
authors: W
authors: Zhang
authors: Wenhui
authors: W
authors: Xu
authors: Wei
authors: W
authors: Tong
authors: Jiaying
authors: J
authors: Liao
authors: Yingying
authors: Y
authors: Zhou
authors: Bangjiao
authors: B
authors: Ye
authors: Yi
authors: Y
authors: Xie