title: Giant photoamplification in indirect-bandgap multilayer MoS2 phototransistors with local bottom-gate structures.
abstract: Local-gate multilayer MoS2 phototransistors exhibit a photoresponsivity of up to 342.6 A W(-1) , which is higher by 3 orders of magnitude than that of global-gate multilayer MoS2 phototransistors. These simulations indicate that the gate underlap is critical for the enhancement of the photoresponsivity. These results suggest that high photoresponsivity can be achieved in indirect-bandgap multilayer MoS2 phototransistors by optimizing the optoelectronic design.
authors: Multi-Functional Nano/Bio Electronics Lab, Kyung Hee University, Gyeonggi, 446-701, South Korea.
authors: Junyeon
authors: J
authors: Kwon
authors: Young Ki
authors: YK
authors: Hong
authors: Gyuchull
authors: G
authors: Han
authors: Inturu
authors: I
authors: Omkaram
authors: Woong
authors: W
authors: Choi
authors: Sunkook
authors: S
authors: Kim
authors: Youngki
authors: Y
authors: Yoon
keywords: MoS2; local-bottom gated structure; phototransistors; responsivity; transition metal dichalcogenide