title: 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2Contact.
abstract: We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2and a high power conversion efficiency of 19.2%.
authors: Electrical Engineering and Computer Sciences Department, University of California , Berkeley, California 94720, United States ; Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States ; Electronic Materials Research Laboratory, Xi'an Jiaotong University , Xi'an, 710049 Shaanxi, People's Republic of China.
authors: Xingtian
authors: X
authors: Yin
authors: Electrical Engineering and Computer Sciences Department, University of California , Berkeley, California 94720, United States ; Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Corsin
authors: C
authors: Battaglia
authors: Electrical Engineering and Computer Sciences Department, University of California , Berkeley, California 94720, United States ; Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States ; Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Yongjing
authors: Y
authors: Lin
authors: Electrical Engineering and Computer Sciences Department, University of California , Berkeley, California 94720, United States ; Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Kevin
authors: K
authors: Chen
authors: Electrical Engineering and Computer Sciences Department, University of California , Berkeley, California 94720, United States ; Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Mark
authors: M
authors: Hettick
authors: Electrical Engineering and Computer Sciences Department, University of California , Berkeley, California 94720, United States ; Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Maxwell
authors: M
authors: Zheng
authors: Electrical Engineering and Computer Sciences Department, University of California , Berkeley, California 94720, United States ; Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Cheng-Ying
authors: CY
authors: Chen
authors: Electrical Engineering and Computer Sciences Department, University of California , Berkeley, California 94720, United States ; Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Daisuke
authors: D
authors: Kiriya
authors: Electrical Engineering and Computer Sciences Department, University of California , Berkeley, California 94720, United States ; Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Ali
authors: A
authors: Javey
keywords: InP photovoltaics; heterojunctions; selective contact; titanium dioxide