title: Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications.
abstract: We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~10(6) s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology.
authors: Center for Energy Harvesting Materials and Systems (CEHMS), Department of Mechanical Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA.
authors: Souvik
authors: S
authors: Kundu
authors: Center for Energy Harvesting Materials and Systems (CEHMS), Department of Mechanical Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA.
authors: Deepam
authors: D
authors: Maurya
authors: Advanced Devices &Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA.
authors: Michael
authors: M
authors: Clavel
authors: Center for Energy Harvesting Materials and Systems (CEHMS), Department of Mechanical Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA.
authors: Yuan
authors: Y
authors: Zhou
authors: Advanced Technology Development Centre, Indian Institute of Technology Kharagpur, Kharagpur 721302, India.
authors: Nripendra N
authors: NN
authors: Halder
authors: Advanced Devices &Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA.
authors: Mantu K
authors: MK
authors: Hudait
authors: Materials Science Centre, Indian Institute of Technology Kharagpur, Kharagpur 721302, India.
authors: Pallab
authors: P
authors: Banerji
authors: Center for Energy Harvesting Materials and Systems (CEHMS), Department of Mechanical Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA.
authors: Shashank
authors: S
authors: Priya