title: Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 nanodevices.
abstract: We report tunable in-plane anisotropic magnetoresistance (AMR) in nanodevices based on topological insulator BiSbTeSe2 (BSTS) nanoflakes by electric gating. The AMR can be changed continuously from negative to positive when the Fermi level is manipulated to cross the Dirac point by an applied gate electric field. We also discuss effects of the gate electric field, current density, and magnetic field on the in-plane AMR with a simple physical model, which is based on the in-plane magnetic field induced shift of the spin-momentum locked topological two surface states that are coupled through side surfaces and bulk weak antilocalization (WAL). The large, tunable and bipolar in-plane AMR in BSTS devices provides the possibility of fabricating more sensitive logic and magnetic random access memory AMR devices.
authors: School of Physical and Mathematical Sciences, Division of Physics and Applied Physics, Nanyang Technological University , Singapore 637371.
authors: Azat
authors: A
authors: Sulaev
authors: Minggang
authors: M
authors: Zeng
authors: Shun-Qing
authors: SQ
authors: Shen
authors: Soon Khuen
authors: SK
authors: Cho
authors: Wei Guang
authors: WG
authors: Zhu
authors: Yuan Ping
authors: YP
authors: Feng
authors: Sergey V
authors: SV
authors: Eremeev
authors: Yoshiyuki
authors: Y
authors: Kawazoe
authors: Lei
authors: L
authors: Shen
authors: Lan
authors: L
authors: Wang
keywords: ab initio calculations; anisotropic magnetoresistance; gate electric field; in-plane magnetic field; topological insulator