title: Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays.
abstract: A multiferroic BiMnO3 nanowire array was prepared using a hydrothermal process and its resistive switching memory behaviors were further investigated. The prominent ferroelectricity can be well controlled by white-light illumination, thus offering an excellent light-controlled resistive switching memory device using a Ag/BiMnO3/Ti structure at room temperature.
authors: Institute for Clean Energy & Advanced Materials (ICEAM), Southwest University, Chongqing 400715, China. ecmli@swu.edu.cn.
authors: Bai
authors: B
authors: Sun
authors: Chang Ming
authors: CM
authors: Li