title: Optimized growth of graphene on SiC: from the dynamic flip mechanism.
abstract: Thermal decomposition of single-crystal SiC is one of the popular methods for growing graphene. However, the mechanism of graphene formation on the SiC surface is poorly understood, and the application of this method is also hampered by its high growth temperature. In this study, based on the ab initio calculations, we propose a vacancy assisted Si-C bond flipping model for the dynamic process of graphene growth on SiC. The fact that the critical stages during growth take place at different energy costs allows us to propose an energetic-beam controlled growth method that not only significantly lowers the growth temperature but also makes it possible to grow high-quality graphene with the desired size and patterns directly on the SiC substrate.
authors: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun, 130033, People's Republic of China. liulei@ciomp.ac.cn.
authors: Dandan
authors: D
authors: Wang
authors: Lei
authors: L
authors: Liu
authors: Wei
authors: W
authors: Chen
authors: Xiaobo
authors: X
authors: Chen
authors: Han
authors: H
authors: Huang
authors: Jun
authors: J
authors: He
authors: Yuan-Ping
authors: YP
authors: Feng
authors: A T S
authors: AT
authors: Wee
authors: D Z
authors: DZ
authors: Shen