title: Fabrication of high-quality amorphous silicon film from cyclopentasilane by vapor deposition between two parallel substrates.
abstract: Cyclopentasilane converts into amorphous silicon film between two parallel substrates under atmospheric pressure by thermal decomposition at 350-400 °C, which combines the advantages of high throughput with cost reduction and high quality film formation.
authors: School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Nomi, Ishikawa 923-1292, Japan. z-shen@jaist.ac.jp tshimoda@jaist.ac.jp.
authors: Zhongrong
authors: Z
authors: Shen
authors: Takashi
authors: T
authors: Masuda
authors: Hideyuki
authors: H
authors: Takagishi
authors: Keisuke
authors: K
authors: Ohdaira
authors: Tatsuya
authors: T
authors: Shimoda