title: Enhanced performance of nano-Bi2WO6-graphene as pseudocapacitor electrodes by charge transfer channel.
abstract: The nano-Bi2WO6/reduced graphene oxide composite obtained by a simple hydrothermal reaction demonstrates a larger specific capacitance of 922 F/g at a charge and discharge currents of 3 A/g with longer cycle life. The As comparison, pristine Bi2WO6 nanoparticles have poor specific capacitance of 574 F/g at a charge and discharge currents of 2 A/g with weak cycle life. Though analyzing the Cyclic voltammetry curves, it is found that there are two oxidation reaction occurring in the materials: oxidation of Bi (III) to Bi (IV) and Bi (III) to Bi (V). The oxidation of Bi (III) to Bi (IV) is reversible while Bi (III) to Bi (V) will cause nonreversible destroy on structure. In this nano-Bi2WO6/reduced graphene oxide composite, graphene with well conductivity will enhance the electrically conducting as charge transfer channel, so that electrons will be transfer much faster in oxidation and most Bi (III) is oxidized to be Bi (IV) which ensure larger specific capacitance and long cycle life. This nano-Bi2WO6/reduced graphene oxide composite has application prospect in high-performance pseudo-capacitors.
authors.affiliation: College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China.
authors.forename: Jun
authors.initials: J
authors.lastname: Zhang
authors.affiliation: College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China.
authors.forename: Pengliang
authors.initials: P
authors.lastname: Liu
authors.affiliation: Department of Materials Engineering, Monash University, Victoria, 3800, Australia.
authors.forename: Yupeng
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China.
authors.forename: Guolong
authors.initials: G
authors.lastname: Xu
authors.affiliation: College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China.
authors.forename: Zhengda
authors.initials: Z
authors.lastname: Lu
authors.affiliation: College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China.
authors.forename: Xiyu
authors.initials: X
authors.lastname: Wang
authors.affiliation: College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Wang
authors.affiliation: College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China.
authors.forename: Lingxia
authors.initials: L
authors.lastname: Yang
authors.affiliation: College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China.
authors.forename: Xi
authors.initials: X
authors.lastname: Tao
authors.affiliation: College of Automation, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China.
authors.forename: Hongbo
authors.initials: H
authors.lastname: Wang
authors.affiliation: College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China.
authors.forename: Erpan
authors.initials: E
authors.lastname: Zhang
authors.affiliation: College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China.
authors.forename: Junhua
authors.initials: J
authors.lastname: Xi
authors.affiliation: 1] College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China [2] State Key Lab of Silicon Materials, Zhejiang University, Hangzhou, 310018, People's Republic of China.
authors.forename: Zhenguo
authors.initials: Z
authors.lastname: Ji