title: Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends.
abstract: Ultra-flexible and transparent metal oxide transistors are developed by doping In2 O3 films with poly(vinylphenole) (PVP). By adjusting the In2 O3 :PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained. In2 O3 :5%PVP-based transistors exhibit mobilities approaching 11 cm(2) V(-1) s(-1) before, and retain up to ca. 90% performance after 100 bending/relaxing cycles at a radius of 10 mm.
authors.affiliation: Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA; State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China.
authors.forename: Xinge
authors.initials: X
authors.lastname: Yu
authors.forename: Li
authors.initials: L
authors.lastname: Zeng
authors.forename: Nanjia
authors.initials: N
authors.lastname: Zhou
authors.forename: Peijun
authors.initials: P
authors.lastname: Guo
authors.forename: Fengyuan
authors.initials: F
authors.lastname: Shi
authors.forename: Donald B
authors.initials: DB
authors.lastname: Buchholz
authors.forename: Q
authors.initials: Q
authors.lastname: Ma
authors.forename: Junsheng
authors.initials: J
authors.lastname: Yu
authors.forename: Vinayak P
authors.initials: VP
authors.lastname: Dravid
authors.forename: Robert P H
authors.initials: RP
authors.lastname: Chang
authors.forename: Michael
authors.initials: M
authors.lastname: Bedzyk
authors.forename: Tobin J
authors.initials: TJ
authors.lastname: Marks
authors.forename: Antonio
authors.initials: A
authors.lastname: Facchetti
keywords: flexible materials; indium oxide; polymer blends; thin-film transistors; transparent electronics