title: Wide-range controllable n-doping of molybdenum disulfide (MoS2) through thermal and optical activation.
abstract: Despite growing interest in doping two-dimensional (2D) transition metal dichalcogenides (TMDs) for future layered semiconductor devices, controllability is currently limited to only heavy doping (degenerate regime). This causes 2D materials to act as metallic layers, and an ion implantation technique with precise doping controllability is not available for these materials (e.g., MoS2, MoSe2, WS2, WSe2, graphene). Since adjustment of the electrical and optical properties of 2D materials is possible within a light (nondegenerate) doping regime, a wide-range doping capability including nondegenerate and degenerate regimes is a critical aspect of the design and fabrication of 2D TMD-based electronic and optoelectronic devices. Here, we demonstrate a wide-range controllable n-doping method on a 2D TMD material (exfoliated trilayer and bulk MoS2) with the assistance of a phosphorus silicate glass (PSG) insulating layer, which has the broadest doping range among the results reported to date (between 3.6 × 10(10) and 8.3 × 10(12) cm(-2)) and is also applicable to other 2D semiconductors. This is achieved through (1) a three-step process consisting of, first, dopant out-diffusion between 700 and 900 °C, second, thermal activation at 500 °C, and, third, optical activation above 5 μW steps and (2) weight percentage adjustment of P atoms in PSG (2 and 5 wt %). We anticipate our widely controllable n-doping method to be a starting point for the successful integration of future layered semiconductor devices.
authors.affiliation: †Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Hyung-Youl
authors.initials: HY
authors.lastname: Park
authors.affiliation: †Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Myung-Hoon
authors.initials: MH
authors.lastname: Lim
authors.affiliation: ‡SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Jeaho
authors.initials: J
authors.lastname: Jeon
authors.affiliation: †Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Gwangwe
authors.initials: G
authors.lastname: Yoo
authors.affiliation: †Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Dong-Ho
authors.initials: DH
authors.lastname: Kang
authors.affiliation: ‡SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Sung Kyu
authors.initials: SK
authors.lastname: Jang
authors.affiliation: ‡SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Min Hwan
authors.initials: MH
authors.lastname: Jeon
authors.affiliation: ‡SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Youngbin
authors.initials: Y
authors.lastname: Lee
authors.affiliation: ‡SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Jeong Ho
authors.initials: JH
authors.lastname: Cho
authors.affiliation: ‡SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Geun Young
authors.initials: GY
authors.lastname: Yeom
authors.affiliation: §Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.
authors.forename: Woo-Shik
authors.initials: WS
authors.lastname: Jung
authors.affiliation: ∥Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin 446-712, Korea.
authors.forename: Jaeho
authors.initials: J
authors.lastname: Lee
authors.affiliation: ∥Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin 446-712, Korea.
authors.forename: Seongjun
authors.initials: S
authors.lastname: Park
authors.affiliation: ‡SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea.|⊥Center for Human Interface Nanotechnology (HINT), Suwon 440-746, Korea.
authors.forename: Sungjoo
authors.initials: S
authors.lastname: Lee
authors.affiliation: †Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Jin-Hong
authors.initials: JH
authors.lastname: Park
keywords: MoS2; controllable doping; optical activation; thermal activation; wide-range