title: ZnGa(2-x)In(x)S4 (0 ≤ x ≤ 0.4) and Zn(1-2y)(CuGa)(y)Ga(1.7)In(0.3)S4 (0.1 ≤ y ≤ 0.2): optimize visible light photocatalytic H2 evolution by fine modulation of band structures.
abstract: Band structure engineering is an efficient technique to develop desired semiconductor photocatalysts, which was usually carried out through isovalent or aliovalent ionic substitutions. Starting from a UV-activated catalyst ZnGa2S4, we successfully exploited good visible light photocatalysts for H2 evolution by In(3+)-to-Ga(3+) and (Cu(+)/Ga(3+))-to-Zn(2+) substitutions. First, the bandgap of ZnGa2-xInxS4 (0 ≤ x ≤ 0.4) decreased from 3.36 to 3.04 eV by lowering the conduction band position. Second, Zn1-2y(CuGa)yGa1.7In0.3S4 (y = 0.1, 0.15, 0.2) provided a further and significant red-shift of the photon absorption to ∼500 nm by raising the valence band maximum and barely losing the overpotential to water reduction. Zn0.7Cu0.15Ga1.85In0.3S4 possessed the highest H2 evolution rate under pure visible light irradiation using S(2-) and SO3(2-) as sacrificial reagents (386 μmol/h/g for the noble-metal-free sample and 629 μmol/h/g for the one loaded with 0.5 wt % Ru), while the binary hosts ZnGa2S4 and ZnIn2S4 (synthesized using the same procedure) show 0 and 27.9 μmol/h/g, respectively. The optimal apparent quantum yield reached to 7.9% at 500 nm by tuning the composition to Zn0.6Cu0.2Ga1.9In0.3S4 (loaded with 0.5 wt % Ru).
authors.affiliation: College of Chemistry and Chemical Engineering, Chongqing University , 174 Shazhengjie Street, Chongqing 400044, People's Republic of China.
authors.forename: Jia
authors.initials: J
authors.lastname: Yang
authors.forename: Hao
authors.initials: H
authors.lastname: Fu
authors.forename: Dingfeng
authors.initials: D
authors.lastname: Yang
authors.forename: Wenliang
authors.initials: W
authors.lastname: Gao
authors.forename: Rihong
authors.initials: R
authors.lastname: Cong
authors.forename: Tao
authors.initials: T
authors.lastname: Yang