title: High-resolution dynamic pressure sensor array based on piezo-phototronic effect tuned photoluminescence imaging.
abstract: A high-resolution dynamic tactile/pressure display is indispensable to the comprehensive perception of force/mechanical stimulations such as electronic skin, biomechanical imaging/analysis, or personalized signatures. Here, we present a dynamic pressure sensor array based on pressure/strain tuned photoluminescence imaging without the need for electricity. Each sensor is a nanopillar that consists of InGaN/GaN multiple quantum wells. Its photoluminescence intensity can be modulated dramatically and linearly by small strain (0-0.15%) owing to the piezo-phototronic effect. The sensor array has a high pixel density of 6350 dpi and exceptional small standard deviation of photoluminescence. High-quality tactile/pressure sensing distribution can be real-time recorded by parallel photoluminescence imaging without any cross-talk. The sensor array can be inexpensively fabricated over large areas by semiconductor product lines. The proposed dynamic all-optical pressure imaging with excellent resolution, high sensitivity, good uniformity, and ultrafast response time offers a suitable way for smart sensing, micro/nano-opto-electromechanical systems.
authors.affiliation: †Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Mingzeng
authors.initials: M
authors.lastname: Peng
authors.affiliation: †Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China.|∥Key Laboratory for Biomechanics and Mechanobiology of Ministry of Education, School of Biological Science and Medical Engineering, Beihang University, Beijing 100191, China.
authors.forename: Zhou
authors.initials: Z
authors.lastname: Li
authors.affiliation: †Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Caihong
authors.initials: C
authors.lastname: Liu
authors.affiliation: †Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Qiang
authors.initials: Q
authors.lastname: Zheng
authors.affiliation: †Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Xieqing
authors.initials: X
authors.lastname: Shi
authors.affiliation: †Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Ming
authors.initials: M
authors.lastname: Song
authors.affiliation: †Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: §Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China.
authors.forename: Shiyu
authors.initials: S
authors.lastname: Du
authors.affiliation: †Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Junyi
authors.initials: J
authors.lastname: Zhai
authors.affiliation: †Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China.|‡School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States.
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang
mesh_terms: D004560:Electricity; D005708:Gallium; D007204:Indium; D036103:Nanotechnology / Q000295:instrumentation*; D061848:Optical Imaging; D055620:Optical Phenomena; D017785:Photons; D011312:Pressure; D012666:Semiconductors
chemical_list: D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride
keywords: all-optical devices; dynamic pressure sensors; photoluminescence; piezo-phototronics; smart skin