title: Self-assembled monolayer-assisted negative lithography.
abstract: Self-assembled monolayers (SAMs) have been widely employed as etching resists in wet lithography systems to form patterns in which the ordered molecular packing of the SAM regions significantly delays the etchant attack. A generally accepted recognition is that the SAMs ability to resist etching is positively correlated to the quality of the surface-assembled structures, and a more ordered molecular packing would correspond to a better etching resistance. Such a classical belief is debated in the present work by providing an alternative SAM-assisted negative lithography where ordered SAM regions are etched more quickly than their disordered counterparts. This method features a unique photoirradiation-imprinted patterning process that simply consists of two steps: (1) UV irradiation on an OH-terminated SAM-modified gold surface through a photomask and (2) the subsequent immersion of the exposed substrate in an aqueous etching solution of N-bromosuccinimide/pyridine to develop a wet lithographic pattern. The entire experimental process reveals a finding from previous work that the etching rate on the UV-exposed regions with disordered molecular packing could be modulated to be slower than that in the unexposed well-defined SAM regions. Longer irradiation times would also revert the patterns from negative to positive. Thus, by merely using one kind of SAM-modified surface to provide both positive and negative micropatterns on gold layers, one could obtain flexible opportunities for high-resolution micro/nanofabrication resembling photolithography.
authors.affiliation: Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, College of Chemistry and Chemical Engineering, Shaanxi Normal University , Xi'an 710062, China.
authors.forename: Xiaoyan
authors.initials: X
authors.lastname: Mu
authors.forename: Aiting
authors.initials: A
authors.lastname: Gao
authors.forename: Dehui
authors.initials: D
authors.lastname: Wang
authors.forename: Peng
authors.initials: P
authors.lastname: Yang