title: Flexible black phosphorus ambipolar transistors, circuits and AM demodulator.
abstract: High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) field-effect transistors (FETs) with electron and hole mobilities superior to what has been previously achieved with other more studied flexible layered semiconducting transistors such as MoS2 and WSe2. Encapsulated bottom-gated BP ambipolar FETs on flexible polyimide afforded maximum carrier mobility of about 310 cm(2)/V·s with field-effect current modulation exceeding 3 orders of magnitude. The device ambipolar functionality and high-mobility were employed to realize essential circuits of electronic systems for flexible technology including ambipolar digital inverter, frequency doubler, and analog amplifiers featuring voltage gain higher than other reported layered semiconductor flexible amplifiers. In addition, we demonstrate the first flexible BP amplitude-modulated (AM) demodulator, an active stage useful for radio receivers, based on a single ambipolar BP transistor, which results in audible signals when connected to a loudspeaker or earphone. Moreover, the BP transistors feature mechanical robustness up to 2% uniaxial tensile strain and up to 5000 bending cycles.
authors.affiliation: Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Weinan
authors.initials: W
authors.lastname: Zhu
authors.forename: Maruthi N
authors.initials: MN
authors.lastname: Yogeesh
authors.forename: Shixuan
authors.initials: S
authors.lastname: Yang
authors.forename: Sandra H
authors.initials: SH
authors.lastname: Aldave
authors.forename: Joon-Seok
authors.initials: JS
authors.lastname: Kim
authors.forename: Sushant
authors.initials: S
authors.lastname: Sonde
authors.forename: Li
authors.initials: L
authors.lastname: Tao
authors.forename: Nanshu
authors.initials: N
authors.lastname: Lu
authors.forename: Deji
authors.initials: D
authors.lastname: Akinwande
keywords: AM demodulator; ambipolar conduction; amplifiers; flexible transistor; frequency doubler; phosphorene