Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method.
Graphene/hexagonal boron nitride (h-BN) vertical heterostructures have recently revealed unusual physical properties and new phenomena, such as commensurate-incommensurate transition and fractional quantum hall states featured with Hofstadter's butterfly. Graphene-based devices on h-BN substrate also exhibit high performance owing to the atomically flat surface of h-BN and its lack of charged impurities. To have a clean interface between the graphene and h-BN for better device performance, direct growth of large-area graphene/h-BN heterostructures is of great importance. Here we report the direct growth of large-area graphene/h-BN vertical heterostructures by a co-segregation method. By one-step annealing sandwiched growth substrates (Ni(C)/(B, N)-source/Ni) in vacuum, wafer-scale graphene/h-BN films can be directly formed on the metal surface. The as-grown vertically stacked graphene/h-BN structures are demonstrated by various morphology and spectroscopic characterizations. This co-segregation approach opens up a new pathway for large-batch production of graphene/h-BN heterostructures and would also be extended to the synthesis of other van der Waals heterostructures.
Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China.
Chaohua
C
Zhang
Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China.
Shuli
S
Zhao
State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 China.
Chuanhong
C
Jin
Stanford Nanocharacterization Laboratory, Stanford University, Stanford, California 94305, USA.
Ai Leen
AL
Koh
Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China.
Yu
Y
Zhou
Division of Physics and Applied Physics, School of Physical and Mathematical Science, Nanyang Technological University, Singapore 637371, Singapore.
Weigao
W
Xu
Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China.
Qiucheng
Q
Li
Division of Physics and Applied Physics, School of Physical and Mathematical Science, Nanyang Technological University, Singapore 637371, Singapore.
Qihua
Q
Xiong
Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China.
Hailin
H
Peng
Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China.
Zhongfan
Z
Liu