Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods.
InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods were fabricated by using soft ultraviolet nanoimprint lithography. The intensity of light emission was found to be greatly enhanced due to the strong near-fields confined at the interface of Al/GaN and extended to the multiple quantum wells (MQWs) active region. The dynamics of carrier recombination and plasmon-enhanced Raman scattering were also investigated, providing a progressive view on the effective energy transfer between MQWs and surface plasmons.
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China. Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China.
Guogang
G
Zhang
Zhe
Z
Zhuang
Xu
X
Guo
Fang-Fang
FF
Ren
Bin
B
Liu
Haixiong
H
Ge
Zili
Z
Xie
Ling
L
Sun
Ting
T
Zhi
Tao
T
Tao
Yi
Y
Li
Youdou
Y
Zheng
Rong
R
Zhang