Spray-combustion synthesis: efficient solution route to high-performance oxide transistors.
Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations.
Departments of Chemistry and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, China;
Xinge
X
Yu
Departments of Chemistry and.
Jeremy
J
Smith
Materials Science and Engineering and.
Nanjia
N
Zhou
Applied Physics Program, Materials Research Center, Northwestern University, Evanston, IL 60208;
Li
L
Zeng
Materials Science and Engineering and.
Peijun
P
Guo
Polyera Corporation, Skokie, IL 60077;
Yu
Y
Xia
Polyera Corporation, Skokie, IL 60077;
Ana
A
Alvarez
Laboratory for Nanostructure Epitaxy and Spintronics on Silicon and National Interuniversity Consortium for the Physical Sciences of Matter, Dipartimento di Fisica, Politecnico di Milano, Como, 22100 Italy; and Istituto Nazionale di Fisica Nucleare, Milan, 20133 Italy.
Stefano
S
Aghion
Departments of Chemistry and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, China;
Hui
H
Lin
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, China;
Junsheng
J
Yu
Materials Science and Engineering and rphchang@gmail.com bedzyk@northwestern.edu rafael.ferragut@polimi.it t-marks@northwestern.edu a-facchetti@northwestern.edu.
Robert P H
RP
Chang
Materials Science and Engineering and rphchang@gmail.com bedzyk@northwestern.edu rafael.ferragut@polimi.it t-marks@northwestern.edu a-facchetti@northwestern.edu.
Michael J
MJ
Bedzyk
Laboratory for Nanostructure Epitaxy and Spintronics on Silicon and National Interuniversity Consortium for the Physical Sciences of Matter, Dipartimento di Fisica, Politecnico di Milano, Como, 22100 Italy; and Istituto Nazionale di Fisica Nucleare, Milan, 20133 Italy rphchang@gmail.com bedzyk@northwestern.edu rafael.ferragut@polimi.it t-marks@northwestern.edu a-facchetti@northwestern.edu.
Rafael
R
Ferragut
Departments of Chemistry and Materials Science and Engineering and rphchang@gmail.com bedzyk@northwestern.edu rafael.ferragut@polimi.it t-marks@northwestern.edu a-facchetti@northwestern.edu.
Tobin J
TJ
Marks
Departments of Chemistry and Polyera Corporation, Skokie, IL 60077; rphchang@gmail.com bedzyk@northwestern.edu rafael.ferragut@polimi.it t-marks@northwestern.edu a-facchetti@northwestern.edu.
Antonio
A
Facchetti
combustion synthesis; low-temperature growth; oxide film; oxide transistor; transistor