Internal gain in Er-doped As₂S₃ chalcogenide planar waveguides.
Low-loss erbium-doped As₂S₃ planar waveguides are fabricated by cothermal evaporation and plasma etching. Internal gain in the telecommunications band is demonstrated for the first time in any chalcogenide glass and additionally in a thin film planar waveguide amplifier configuration.
Kunlun
K
Yan
Khu
K
Vu
Steve
S
Madden