Voltage-controlled ferroelastic switching in Pb(Zr0.2Ti0.8)O3 thin films.
We report a voltage controlled reversible creation and annihilation of a-axis oriented ∼10 nm wide ferroelastic nanodomains without a concurrent ferroelectric 180° switching of the surrounding c-domain matrix in archetypal ferroelectric Pb(Zr0.2Ti0.8)O3 thin films by using the piezo-response force microscopy technique. In previous studies, the coupled nature of ferroelectric switching and ferroelastic rotation has made it difficult to differentiate the underlying physics of ferroelastic domain wall movement. Our observation of distinct thresholds for ferroelectric and ferroelastic switching allows us investigate the ferroelastic switching cleanly and demonstrate a new degree of nanoscale control over the ferroelastic domains.
Asif Islam
AI
Khan
⊥Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic.
Xavier
X
Marti
Claudy
C
Serrao
∥Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
Ramamoorthy
R
Ramesh
∥Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
Sayeef
S
Salahuddin
Nanodomains; Pb(Zr0.2Ti0.8)O3; ferroelastic switching; ferroelectricity; thin film