Simulations of operation dynamics of different type GaN particle sensors.
The operation dynamics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift-diffusion models. The drift-diffusion current simulations have been implemented by employing the software package Synopsys TCAD Sentaurus. The monopolar and bipolar drift regimes have been analyzed by using dynamic models based on the Shockley-Ramo theorem. The carrier multiplication processes determined by impact ionization have been considered in order to compensate carrier lifetime reduction due to introduction of radiation defects into GaN detector material.
Institute of Applied Research and Faculty of Physics, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius, Lithuania. eugenijus.gaubas@ff.vu.lt.
Eugenijus
E
Gaubas
Institute of Applied Research and Faculty of Physics, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius, Lithuania. tomas.ceponis@ff.vu.lt.
Tomas
T
Ceponis
Institute of Applied Research and Faculty of Physics, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius, Lithuania. vidas.kalesinskas@ff.vu.lt.
Vidas
V
Kalesinskas
Institute of Applied Research and Faculty of Physics, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius, Lithuania. jevgenij.pavlov@tmi.vu.lt.
Jevgenij
J
Pavlov
Institute of Applied Research and Faculty of Physics, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius, Lithuania. juozas.vysniauskas@ff.vu.lt.
Juozas
J
Vysniauskas