Tunable quantum confinement in ultrathin, optically active semiconductor nanowires via reverse-reaction growth.
A unique growth scheme is demonstrated to realize ultrathin GaAs nanowires on Si with sizes down to the sub-10 nm regime. While this scheme preserves the bulk-like crystal properties, correlated optical experiments reveal huge blueshifted photo-luminescence (up to ≈100 meV) with decreasing nanowire cross-section, demonstrating very strong quantum confinement effects.
Walter Schottky Institut, Physik Department and Nanosystems Initiative Munich, TU München, Am Coulombwall 4, 85748, Garching, Germany.
Bernhard
B
Loitsch
Daniel
D
Rudolph
Stefanie
S
Morkötter
Markus
M
Döblinger
Gianluca
G
Grimaldi
Lukas
L
Hanschke
Sonja
S
Matich
Eric
E
Parzinger
Ursula
U
Wurstbauer
Gerhard
G
Abstreiter
Jonathan J
JJ
Finley
Gregor
G
Koblmüller
growth; nanowires; optical properties; quantum confinement; structural properties