Controllable thermal rectification realized in binary phase change composites.
Phase transition is a natural phenomenon happened around our daily life, represented by the process from ice to water. While melting and solidifying at a certain temperature, a high heat of fusion is accompanied, classified as the latent heat. Phase change material (PCM) has been widely applied to store and release large amount of energy attributed to the distinctive thermal behavior. Here, with the help of nanoporous materials, we introduce a general strategy to achieve the binary eicosane/PEG4000 stuffed reduced graphene oxide aerogels, which has two ends with different melting points. It's successfully demonstrated this binary PCM composites exhibits thermal rectification characteristic. Partial phase transitions within porous networks instantaneously result in one end of the thermal conductivity saltation at a critical temperature, and therefore switch on or off the thermal rectification with the coefficient up to 1.23. This value can be further raised by adjusting the loading content of PCM. The uniqueness of this device lies in its performance as a normal thermal conductor at low temperature, only exhibiting rectification phenomenon when temperature is higher than a critical value. The stated technology has broad applications for thermal energy control in macroscopic scale such as energy-efficiency building or nanodevice thermal management.
Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China.
Renjie
R
Chen
1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
Yalong
Y
Cui
1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
He
H
Tian
Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China.
Ruimin
R
Yao
Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China.
Zhenpu
Z
Liu
1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
Yi
Y
Shu
1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
Cheng
C
Li
1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
Yi
Y
Yang
1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
Tianling
T
Ren
Institute of High Performance Computing, Singapore 138632, Singapore.
Gang
G
Zhang
Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China.
Ruqiang
R
Zou