Transient characteristics for proton gating in laterally coupled indium-zinc-oxide transistors.
The control and detection over processing, transport and delivery of chemical species is of great importance in sensors and biological systems. The transient characteristics of the migration of chemical species reflect the basic properties in the processings of chemical species. Here, we observed the field-configurable proton effects in a laterally coupled transistor gated by phosphorosilicate glass (PSG). The bias on the lateral gate would modulate the interplay between protons and electrons at the PSG/indium-zinc-oxide (IZO) channel interface. Due to the modulation of protons flux within the PSG films, the IZO channel current would be modified correspondingly. The characteristic time for the proton gating is estimated to be on the order of 20 ms. Such laterally coupled oxide based transistors with proton gating are promising for low-cost portable biosensors and neuromorphic system applications.
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
Ning
N
Liu
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
Li Qiang
LQ
Zhu
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
Hui
H
Xiao
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
Chang Jin
CJ
Wan
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
Yang Hui
YH
Liu
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
Jin Yu
JY
Chao
D004566:Electrodes; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007204:Indium / Q000737:chemistry*; D011522:Protons; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
D011522:Protons; D007204:Indium; C047711:indium oxide; D015034:Zinc Oxide
interfacial electric-double layer (EDL); laterally coupling; proton gating; transient characteristics