Carrier plasmon induced nonlinear band gap renormalization in two-dimensional semiconductors.
In reduced-dimensional semiconductors, doping-induced carrier plasmons can strongly couple with quasiparticle excitations, leading to a significant band gap renormalization. However, the physical origin of this generic effect remains obscure. We develop a new plasmon-pole theory that efficiently and accurately captures this coupling. Using monolayer MoS(2) and MoSe(2) as prototype two-dimensional (2D) semiconductors, we reveal a striking band gap renormalization above 400 meV and an unusual nonlinear evolution of their band gaps with doping. This prediction significantly differs from the linear behavior that is observed in one-dimensional structures. Notably, our predicted band gap renormalization for MoSe(2) is in excellent agreement with recent experimental results. Our developed approach allows for a quantitative understanding of many-body interactions in general doped 2D semiconductors and paves the way for novel band gap engineering techniques.
Department of Physics and Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri 63130, USA.
Yufeng
Y
Liang
Department of Physics and Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri 63130, USA.
Li
L
Yang