Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode.
We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics. Both electrode sides of the detector have been exposed to a241Am source in order to obtain events with full contributions of either electrons or holes. The drift time has been measured to obtain the mobility for each charge carrier. The Hecht equation has been employed to evaluate the lifetime. The measured values forμτe/h(mobility-lifetime product) are in agreement with earlier published data.
Institut de Física d'Altes Energies, IFAE, 08193 Bellaterra, Barcelona, Spain.
G
G
Ariño-Estrada
Institut de Física d'Altes Energies, IFAE, 08193 Bellaterra, Barcelona, Spain.
M
M
Chmeissani
Institut de Física d'Altes Energies, IFAE, 08193 Bellaterra, Barcelona, Spain.
G
G
de Lorenzo
Institut de Física d'Altes Energies, IFAE, 08193 Bellaterra, Barcelona, Spain.
M
M
Kolstein
Institut de Física d'Altes Energies, IFAE, 08193 Bellaterra, Barcelona, Spain.
C
C
Puigdengoles
Institut de Física d'Altes Energies, IFAE, 08193 Bellaterra, Barcelona, Spain.
J
J
García
Centro Nacional de Microelectrónica, IMB-CNM (CSIC), 08193 Bellaterra, Barcelona, Spain.
E
E
Cabruja
Charge transport and multiplication in solid media; Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc); Solid state detectors