Wafer-level hysteresis-free resonant carbon nanotube transistors.
We report wafer-level fabrication of resonant-body carbon nanotube (CNT) field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obtained. Through combined chemical and thermal treatments, hysteresis-free (in vacuum) suspended-body CNTFETs have been demonstrated. Electrostatic actuation by lateral gate and FET-based readout of mechanical resonance have been achieved at room temperature. Both upward and downward in situ frequency tuning has been experimentally demonstrated in the dual-gate architecture. The minuscule mass, high resonance frequency, and in situ tunability of the resonant CNTFETs offer promising features for applications in radio frequency signal processing and ultrasensitive sensing.
†Nanoelectronics Lab, Stanford University, Stanford, California 94305, United States.|‡Nanoelectronic Devices Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne 1015, Switzerland.
Ji
J
Cao
‡Nanoelectronic Devices Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne 1015, Switzerland.
Sebastian T
ST
Bartsch
‡Nanoelectronic Devices Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne 1015, Switzerland.
Adrian M
AM
Ionescu
carbon nanotube; field-effect transistors; hysteresis-free; in situ tuning; nanoprecision; resonators; wafer-scale fabrication