Systematics of molecular self-assembled networks at topological insulators surfaces.
The success of topological insulators (TI) in creating devices with unique functionalities is directly connected to the ability of coupling their helical spin states to well-defined perturbations. However, up to now, TI-based heterostructures always resulted in very disordered interfaces, characterized by strong mesoscopic fluctuations of the chemical potential that make the spin-momentum locking ill-defined over length scales of few nanometers or even completely destroy topological states. These limitations call for the ability to control topological interfaces with atomic precision. Here, we demonstrate that molecular self-assembly processes driven by inherent interactions among the constituents offer the opportunity to create well-defined networks at TIs surfaces. Even more remarkably, we show that the symmetry of the overlayer can be finely controlled by appropriate chemical modifications. By analyzing the influence of the molecules on the TI electronic properties, we rationalize our results in terms of the charge redistribution taking place at the interface. Overall, our approach offers a precise and fast way to produce tailor-made nanoscale surface landscapes. In particular, our findings make organic materials ideal TIs counterparts, because they offer the possibility to chemically tune both electronic and magnetic properties within the same family of molecules, thereby bringing us a significant step closer toward an application of this fascinating class of materials.
†Physikalisches Institut, Experimentelle Physik II, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.
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Bathon
†Physikalisches Institut, Experimentelle Physik II, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.
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Sessi
‡V. S. Sobolev Institute of Geology and Mineralogy, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russia.|§Novosibirsk State University, 630090 Novosibirsk, Russia.
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§Novosibirsk State University, 630090 Novosibirsk, Russia.|∥A. V. Rzanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russia.
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Tereshchenko
†Physikalisches Institut, Experimentelle Physik II, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.|⊥Wilhelm Conrad Röntgen-Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.
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Bode
Topological insulators; magnetism; molecules; self-assembly