Low-voltage flexible organic electronics based on high-performance sol-gel titanium dioxide dielectric.
In this letter, we report that high-performance insulating films can be generated by judicious control over the microstructure of sol-gel-processed titanium dioxide (TiO2) films, typically known as wide-bandgap semiconductors. The resultant device made of 23 nm-thick TiO2 dielectric layer exhibits a low leakage current density of ∼1 × 10(-7) A cm(-2) at 2 V and a large areal capacitance of 560 nF cm(-2) with the corresponding dielectric constant of 27. Finally, low-voltage flexible organic thin-film transistors were successfully demonstrated by incorporating this versatile solution-processed oxide dielectric material into pentacene transistors on polyimide substrates.
†School of Materials Science and Engineering and ‡Research Institute for Solar and Sustainable Energies, §Department of Physics and Photon Science, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
Sujin
S
Sung
†School of Materials Science and Engineering and ‡Research Institute for Solar and Sustainable Energies, §Department of Physics and Photon Science, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
Sungjun
S
Park
†School of Materials Science and Engineering and ‡Research Institute for Solar and Sustainable Energies, §Department of Physics and Photon Science, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
Won-June
WJ
Lee
†School of Materials Science and Engineering and ‡Research Institute for Solar and Sustainable Energies, §Department of Physics and Photon Science, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
Jongho
J
Son
†School of Materials Science and Engineering and ‡Research Institute for Solar and Sustainable Energies, §Department of Physics and Photon Science, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
Chang-Hyun
CH
Kim
†School of Materials Science and Engineering and ‡Research Institute for Solar and Sustainable Energies, §Department of Physics and Photon Science, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
Yoonhee
Y
Kim
†School of Materials Science and Engineering and ‡Research Institute for Solar and Sustainable Energies, §Department of Physics and Photon Science, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
Do Young
do Y
Noh
†School of Materials Science and Engineering and ‡Research Institute for Solar and Sustainable Energies, §Department of Physics and Photon Science, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
Myung-Han
MH
Yoon
gate dielectric; low-voltage; organic thin-film transistor; sol−gel; titanium dioxide