Single layer graphene electrodes for quantum dot-light emitting diodes.
Single layer graphene was employed as the electrode in quantum dot-light emitting diodes (QD-LEDs) to replace indium tin oxide (ITO). The graphene layer demonstrated low surface roughness, good hole injection ability, and proper work function matching with the poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) layer. Together with the hole transport layer and electron transport layer, the fabricated QD-LED showed good current efficiency and power efficiency, which were even higher than an ITO-based similar device under low current density. The result indicates that graphene can be used as anodes to replace ITO in QD-LEDs.
State Key Laboratory on Integrated Optoelectronics, and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China. College of Material Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, People's Republic of China.
Long
L
Yan
Yu
Y
Zhang
Xiaoyu
X
Zhang
Jia
J
Zhao
Yu
Y
Wang
Tieqiang
T
Zhang
Yongheng
Y
Jiang
Wenzhu
W
Gao
Jingzhi
J
Yin
Jun
J
Zhao
William W
WW
Yu