title: Giant negative magnetoresistance in Manganese-substituted Zinc Oxide.
abstract: We report a large negative magnetoresistance in Manganese-substituted Zinc Oxide thin films. This anomalous effect was found to appear in oxygen-deficient films and to increase with the concentration of Manganese. By combining magnetoresistive measurements with magneto-photoluminescence, we demonstrate that the effect can be explained as the result of a magnetically induced transition from hopping to band conduction where the activation energy is caused by the sp-d exchange interaction.
authors.affiliation: 1] Department of Physics and Materials Science, Device Physics Group, City University of Hong Kong, Kowloon, Hong Kong SAR, China [2] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [3] Shenzhen Research Institute, City University of Hong Kong, High-Tech Zone, Nanshan District, Shenzhen 518057, China.
authors.forename: X L
authors.initials: XL
authors.lastname: Wang
authors.affiliation: 1] Department of Physics and Materials Science, Device Physics Group, City University of Hong Kong, Kowloon, Hong Kong SAR, China [2] Shenzhen Research Institute, City University of Hong Kong, High-Tech Zone, Nanshan District, Shenzhen 518057, China.
authors.forename: Q
authors.initials: Q
authors.lastname: Shao
authors.affiliation: Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong SAR, China.
authors.forename: A
authors.initials: A
authors.lastname: Zhuravlyova
authors.affiliation: Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong SAR, China.
authors.forename: M
authors.initials: M
authors.lastname: He
authors.affiliation: Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong SAR, China.
authors.forename: Y
authors.initials: Y
authors.lastname: Yi
authors.affiliation: Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong SAR, China.
authors.forename: R
authors.initials: R
authors.lastname: Lortz
authors.affiliation: Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong SAR, China.
authors.forename: J N
authors.initials: JN
authors.lastname: Wang
authors.affiliation: 1] Department of Physics and Materials Science, Device Physics Group, City University of Hong Kong, Kowloon, Hong Kong SAR, China [2] Shenzhen Research Institute, City University of Hong Kong, High-Tech Zone, Nanshan District, Shenzhen 518057, China.
authors.forename: A
authors.initials: A
authors.lastname: Ruotolo