title: Topological proximity effect in a topological insulator hybrid.
abstract: It is well known that a topologically protected gapless state appears at an interface between a topological insulator and an ordinary insulator; however, the physics of the interface between a topological insulator and a metal has largely been left unexplored. Here we report a novel phenomenon termed topological proximity effect, which occurs between a metallic ultrathin film and a three-dimensional topological insulator. We study one bilayer of bismuth metal grown on the three-dimensional topological insulator material TlBiSe2, and by using spin- and angle-resolved photoemission spectroscopy, we found evidence that the topological Dirac-cone state migrates from the surface of TlBiSe2 to the attached one-bilayer Bi. We show that such a migration of the topological state occurs as a result of strong spin-dependent hybridization of the wave functions at the interface, which is also supported by our first-principles calculations. This discovery points to a new route to manipulating the topological properties of materials.
authors.affiliation: Department of Physics, Tohoku University, Sendai 980-8578, Japan.
authors.forename: T
authors.initials: T
authors.lastname: Shoman
authors.affiliation: WPI Research Center, Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
authors.forename: A
authors.initials: A
authors.lastname: Takayama
authors.affiliation: Department of Physics, Tohoku University, Sendai 980-8578, Japan.
authors.forename: T
authors.initials: T
authors.lastname: Sato
authors.affiliation: WPI Research Center, Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
authors.forename: S
authors.initials: S
authors.lastname: Souma
authors.affiliation: 1] Department of Physics, Tohoku University, Sendai 980-8578, Japan [2] WPI Research Center, Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
authors.forename: T
authors.initials: T
authors.lastname: Takahashi
authors.affiliation: Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan.
authors.forename: T
authors.identifier: 0000000171092801
authors.initials: T
authors.lastname: Oguchi
authors.affiliation: Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan.
authors.forename: Kouji
authors.initials: K
authors.lastname: Segawa
authors.affiliation: Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan.
authors.forename: Yoichi
authors.identifier: 0000000235533355
authors.initials: Y
authors.lastname: Ando