title: Carbon p electron ferromagnetism in silicon carbide.
abstract: Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic electronic origin.
authors.affiliation: 1] Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden, Germany [2] Technische Universität Dresden, 01062 Dresden, Germany.
authors.forename: Yutian
authors.initials: Y
authors.lastname: Wang
authors.affiliation: 1] Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden, Germany [2] Research &Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Research &Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Gang
authors.initials: G
authors.lastname: Wang
authors.affiliation: Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany.
authors.forename: Wolfgang
authors.initials: W
authors.lastname: Anwand
authors.affiliation: Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
authors.forename: Catherine A
authors.initials: CA
authors.lastname: Jenkins
authors.affiliation: Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
authors.forename: Elke
authors.initials: E
authors.lastname: Arenholz
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden, Germany.
authors.forename: Frans
authors.initials: F
authors.lastname: Munnik
authors.affiliation: Institute of Physics, Technische Universität Chemnitz, 09107 Chemnitz, Germany.
authors.forename: Ovidiu D
authors.initials: OD
authors.lastname: Gordan
authors.affiliation: Institute of Physics, Technische Universität Chemnitz, 09107 Chemnitz, Germany.
authors.forename: Georgeta
authors.initials: G
authors.lastname: Salvan
authors.affiliation: Institute of Physics, Technische Universität Chemnitz, 09107 Chemnitz, Germany.
authors.forename: Dietrich R T
authors.initials: DR
authors.lastname: Zahn
authors.affiliation: Research &Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Xiaolong
authors.initials: X
authors.lastname: Chen
authors.affiliation: 1] Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden, Germany [2] Institute of Physics, Technische Universität Chemnitz, 09107 Chemnitz, Germany.
authors.forename: Sibylle
authors.initials: S
authors.lastname: Gemming
authors.affiliation: 1] Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden, Germany [2] Technische Universität Dresden, 01062 Dresden, Germany.
authors.forename: Manfred
authors.initials: M
authors.lastname: Helm
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden, Germany.
authors.forename: Shengqiang
authors.initials: S
authors.lastname: Zhou