title: Fabrication of controllable and stable In₂O₃ nanowire transistors using an octadecylphosphonic acid self-assembled monolayer.
abstract: The controllability and stability of nanowire transistor characteristics are essential for the development of low-noise and fast-switching nano-electronic devices. In this study, the positive shift of threshold voltage and the improvement of interface quality on In2O3 nanowire transistors were simultaneously achieved by using octadecylphosphonic acid (OD-PA) self-assembly. Following the chemical bond of OD-PA molecules on the surface of In2O3 nanowires, the threshold voltage was positively shifted to 2.95 V, and the noise amplitude decreased to approximately 87.5%. The results suggest that an OD-PA self-assembled monolayer can be used to manipulate and stabilize the transistor characteristics of nanowire-based memory and display devices that require high-sensitivity, low-noise, and fast-response.
authors.affiliation: Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do 443-760, Korea.
authors.forename: Taekyung
authors.initials: T
authors.lastname: Lim
authors.forename: Junebeom
authors.initials: J
authors.lastname: Han
authors.forename: Keumyoung
authors.initials: K
authors.lastname: Seo
authors.forename: Min-Kyu
authors.initials: MK
authors.lastname: Joo
authors.forename: Jae-Sung
authors.initials: JS
authors.lastname: Kim
authors.forename: Wung-Yeon
authors.initials: WY
authors.lastname: Kim
authors.forename: Gyu-Tae
authors.initials: GT
authors.lastname: Kim
authors.forename: Sanghyun
authors.initials: S
authors.lastname: Ju