title: On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect.
abstract: Thermoelectric effects in magnetic tunnel junctions are promising to serve as the basis for logic devices or memories in a "green" information technology. However, up to now the readout contrast achieved with Seebeck effects was magnitudes smaller compared to the well-established tunnel magnetoresistance effect. Here, we resolve this problem by demonstrating that the tunnel magneto-Seebeck effect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic "1" state and off to "0" by simply changing the magnetic state of the CoFeB electrodes. This new functionality is achieved by combining a thermal gradient and an electric field. Our results show that the signal crosses zero and can be adjusted by tuning a bias voltage that is applied between the electrodes of the junction; hence, the name of the effect is bias-enhanced tunnel magneto-Seebeck effect (bTMS). Via the spin- and energy-dependent transmission of electrons in the junction, the bTMS effect can be configured using the bias voltage with much higher control than the tunnel magnetoresistance and even completely suppressed for only one magnetic configuration. Moreover, our measurements are a step towards the experimental realization of high TMS ratios without additional bias voltage, which are predicted for specific Co-Fe compositions.
authors.affiliation: Center for Spinelectronic Materials and Devices, Physics Department, Bielefeld University, Universitätsstrasse 25, Bielefeld, Germany.
authors.forename: Alexander
authors.initials: A
authors.lastname: Boehnke
authors.affiliation: 1] I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, Göttingen, Germany [2] Institut für Physik, Ernst-Moritz-Arndt Universität, Felix-Hausdorff-Str. 6, Greifswald, Germany.
authors.forename: Marius
authors.initials: M
authors.lastname: Milnikel
authors.affiliation: 1] I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, Göttingen, Germany [2] Institut für Physik, Ernst-Moritz-Arndt Universität, Felix-Hausdorff-Str. 6, Greifswald, Germany.
authors.forename: Marvin
authors.initials: M
authors.lastname: von der Ehe
authors.affiliation: I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, Gießen, Germany.
authors.forename: Christian
authors.initials: C
authors.lastname: Franz
authors.affiliation: 1] I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, Göttingen, Germany [2] Institut für Physik, Ernst-Moritz-Arndt Universität, Felix-Hausdorff-Str. 6, Greifswald, Germany.
authors.forename: Vladyslav
authors.initials: V
authors.lastname: Zbarsky
authors.affiliation: I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, Gießen, Germany.
authors.forename: Michael
authors.initials: M
authors.lastname: Czerner
authors.affiliation: Center for Spinelectronic Materials and Devices, Physics Department, Bielefeld University, Universitätsstrasse 25, Bielefeld, Germany.
authors.forename: Karsten
authors.initials: K
authors.lastname: Rott
authors.affiliation: 1] Thin films and Physics of Nanostructures, Physics Department, Bielefeld University, Universitätsstrasse 25, Bielefeld, Germany [2] Institut für Physik, Johannes Gutenberg Universität Mainz, Staudingerweg 7, Mainz, Germany.
authors.forename: Andy
authors.initials: A
authors.lastname: Thomas
authors.affiliation: I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, Gießen, Germany.
authors.forename: Christian
authors.initials: C
authors.lastname: Heiliger
authors.affiliation: Center for Spinelectronic Materials and Devices, Physics Department, Bielefeld University, Universitätsstrasse 25, Bielefeld, Germany.
authors.forename: Günter
authors.initials: G
authors.lastname: Reiss
authors.affiliation: 1] I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, Göttingen, Germany [2] Institut für Physik, Ernst-Moritz-Arndt Universität, Felix-Hausdorff-Str. 6, Greifswald, Germany.
authors.forename: Markus
authors.initials: M
authors.lastname: Münzenberg