title: Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions.
abstract: Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO-ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal-insulator transition of the CoO(1-v) layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China. shishenyan@sdu.edu.cn yftian@sdu.edu.cn.
authors.forename: Kun
authors.initials: K
authors.lastname: Zhang
authors.forename: Yan-ling
authors.initials: YL
authors.lastname: Cao
authors.forename: Yue-wen
authors.initials: YW
authors.lastname: Fang
authors.forename: Qiang
authors.initials: Q
authors.lastname: Li
authors.forename: Jie
authors.initials: J
authors.lastname: Zhang
authors.forename: Chun-gang
authors.initials: CG
authors.lastname: Duan
authors.forename: Shi-shen
authors.initials: SS
authors.lastname: Yan
authors.forename: Yu-feng
authors.initials: YF
authors.lastname: Tian
authors.forename: Rong
authors.initials: R
authors.lastname: Huang
authors.forename: Rong-kun
authors.initials: RK
authors.lastname: Zheng
authors.forename: Shi-shou
authors.initials: SS
authors.lastname: Kang
authors.forename: Yan-xue
authors.initials: YX
authors.lastname: Chen
authors.forename: Guo-lei
authors.initials: GL
authors.lastname: Liu
authors.forename: Liang-mo
authors.initials: LM
authors.lastname: Mei