title: Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb₂O₅-NaNbO₃ thin films.
abstract: Dynamic oxygen vacancies play a significant role in memristive switching materials and memristors can be realized via well controlled doping. Based on this idea we deposite Nb₂O₅-NaNbO₃ nanocomposite thin films on SrRuO₃-buffered LaAlO₃ substrates. Through the spontaneous phase separation and self-assembly growth, two phases form clear vertical heteroepitaxial nanostructures. The interfaces between niobium oxide and sodium niobate full of ion vacancies form the conductive channels. Alternative I-V behavior attributed to dynamic ion migration reveals the memristive switching mechanism under the external bias. We believe that this phenomenon has a great potential in future device applications.
authors.affiliation: Multi-disciplinary Materials Research Center, Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China.
authors.forename: Linglong
authors.initials: L
authors.lastname: Li
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China.
authors.forename: Lu
authors.initials: L
authors.lastname: Lu
authors.affiliation: Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia, 24061, USA.
authors.forename: Zhiguang
authors.initials: Z
authors.lastname: Wang
authors.affiliation: Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia, 24061, USA.
authors.forename: Yanxi
authors.initials: Y
authors.lastname: Li
authors.affiliation: Multi-disciplinary Materials Research Center, Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China.
authors.forename: Yonggang
authors.initials: Y
authors.lastname: Yao
authors.affiliation: Multi-disciplinary Materials Research Center, Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China.
authors.forename: Dawei
authors.initials: D
authors.lastname: Zhang
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China.
authors.forename: Guang
authors.initials: G
authors.lastname: Yang
authors.affiliation: Asylum Research, Oxford Instruments Company, Shanghai 200233, China.
authors.forename: Jianjun
authors.initials: J
authors.lastname: Yao
authors.affiliation: Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia, 24061, USA.
authors.forename: Dwight
authors.initials: D
authors.lastname: Viehland
authors.affiliation: Multi-disciplinary Materials Research Center, Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China.
authors.forename: Yaodong
authors.initials: Y
authors.lastname: Yang