title: Plasticity in memristive devices for spiking neural networks.
abstract: Memristive devices present a new device technology allowing for the realization of compact non-volatile memories. Some of them are already in the process of industrialization. Additionally, they exhibit complex multilevel and plastic behaviors, which make them good candidates for the implementation of artificial synapses in neuromorphic engineering. However, memristive effects rely on diverse physical mechanisms, and their plastic behaviors differ strongly from one technology to another. Here, we present measurements performed on different memristive devices and the opportunities that they provide. We show that they can be used to implement different learning rules whose properties emerge directly from device physics: real time or accelerated operation, deterministic or stochastic behavior, long term or short term plasticity. We then discuss how such devices might be integrated into a complete architecture. These results highlight that there is no unique way to exploit memristive devices in neuromorphic systems. Understanding and embracing device physics is the key for their optimal use.
authors.affiliation: Laboratoire d'Intégration du Matériau au Système, UMR CNRS 5218, Université de Bordeaux Talence, France.
authors.forename: Sylvain
authors.initials: S
authors.lastname: Saïghi
authors.affiliation: Institute of Neuroinformatics, University of Zurich and ETH Zurich Zurich, Switzerland.
authors.forename: Christian G
authors.initials: CG
authors.lastname: Mayr
authors.affiliation: Instituto de Microelectrónica de Sevilla, IMSE-CNM, Universidad de Sevilla and CSIC Sevilla, Spain.
authors.forename: Teresa
authors.initials: T
authors.lastname: Serrano-Gotarredona
authors.affiliation: Faculty of Electrical Engineering and Information Technology, Technische Universität Chemnitz Chemnitz, Germany.
authors.forename: Heidemarie
authors.initials: H
authors.lastname: Schmidt
authors.affiliation: Laboratoire d'Intégration du Matériau au Système, UMR CNRS 5218, Université de Bordeaux Talence, France.
authors.forename: Gwendal
authors.initials: G
authors.lastname: Lecerf
authors.affiliation: Laboratoire d'Intégration du Matériau au Système, UMR CNRS 5218, Université de Bordeaux Talence, France.
authors.forename: Jean
authors.initials: J
authors.lastname: Tomas
authors.affiliation: Unité Mixte de Physique CNRS/Thales, Palaiseau, France Associated to University Paris-Sud Orsay, France.
authors.forename: Julie
authors.initials: J
authors.lastname: Grollier
authors.affiliation: Unité Mixte de Physique CNRS/Thales, Palaiseau, France Associated to University Paris-Sud Orsay, France.
authors.forename: Sören
authors.initials: S
authors.lastname: Boyn
authors.affiliation: Institut d'Electronique Fondamentale, Université Paris-Sud, CNRS Orsay, France.
authors.forename: Adrien F
authors.initials: AF
authors.lastname: Vincent
authors.affiliation: Institut d'Electronique Fondamentale, Université Paris-Sud, CNRS Orsay, France.
authors.forename: Damien
authors.initials: D
authors.lastname: Querlioz
authors.affiliation: Institut d'Electronique, Microelectronique et Nanotechnologies, UMR CNRS 8520 Villeneuve d'Ascq, France.
authors.forename: Selina
authors.initials: S
authors.lastname: La Barbera
authors.affiliation: Institut d'Electronique, Microelectronique et Nanotechnologies, UMR CNRS 8520 Villeneuve d'Ascq, France.
authors.forename: Fabien
authors.initials: F
authors.lastname: Alibart
authors.affiliation: Institut d'Electronique, Microelectronique et Nanotechnologies, UMR CNRS 8520 Villeneuve d'Ascq, France.
authors.forename: Dominique
authors.initials: D
authors.lastname: Vuillaume
authors.affiliation: CEA, LIST, Saclay Nano-INNOV PC 172 Gif sur Yvette, France.
authors.forename: Olivier
authors.initials: O
authors.lastname: Bichler
authors.affiliation: CEA, LIST, Saclay Nano-INNOV PC 172 Gif sur Yvette, France.
authors.forename: Christian
authors.initials: C
authors.lastname: Gamrat
authors.affiliation: Instituto de Microelectrónica de Sevilla, IMSE-CNM, Universidad de Sevilla and CSIC Sevilla, Spain.
authors.forename: Bernabé
authors.initials: B
authors.lastname: Linares-Barranco
keywords: hardware neural network; memristive device; memristor; neuromorphic engineering; plasticity