title: Depth profiling charge accumulation from a ferroelectric into a doped Mott insulator.
abstract: The electric field control of functional properties is a crucial goal in oxide-based electronics. Nonvolatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly known, which limits our understanding of such switching effects. Here, we use a first-of-a-kind combination of scanning transmission electron microscopy with electron energy loss spectroscopy, near-total-reflection hard X-ray photoemission spectroscopy, and ab initio theory to address this issue. We achieve a direct, quantitative, atomic-scale characterization of the polarization-induced charge density changes at the interface between the ferroelectric BiFeO3 and the doped Mott insulator Ca(1-x)Ce(x)MnO3, thus providing insight on how interface-engineering can enhance these switching effects.
authors.affiliation: †Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud XI, 91405 Orsay, France.
authors.forename: Maya
authors.initials: M
authors.lastname: Marinova
authors.affiliation: ‡Synchrotron-SOLEIL, BP 48, Saint-Aubin, F91192 Gif sur Yvette CEDEX, France.
authors.forename: Julien E
authors.initials: JE
authors.lastname: Rault
authors.affiliation: †Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud XI, 91405 Orsay, France.
authors.forename: Alexandre
authors.initials: A
authors.lastname: Gloter
authors.affiliation: §Department of Physics, University of California Davis, Davis, California 95616, United States.|∥Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.|⊥Peter Grünberg Institut PGI-6, Forschungszentrum Jülich, 52425 Jülich, Germany.
authors.forename: Slavomir
authors.initials: S
authors.lastname: Nemsak
authors.affiliation: ∇Department of Physics and Astronomy, Uppsala University, Box 516, SE-75120 Uppsala, Sweden.|#Institut Laue-Langevin, 38000 Grenoble, France.
authors.forename: Gunnar K
authors.initials: GK
authors.lastname: Palsson
authors.affiliation: ‡Synchrotron-SOLEIL, BP 48, Saint-Aubin, F91192 Gif sur Yvette CEDEX, France.
authors.forename: Jean-Pascal
authors.initials: JP
authors.lastname: Rueff
authors.affiliation: §Department of Physics, University of California Davis, Davis, California 95616, United States.|∥Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
authors.forename: Charles S
authors.initials: CS
authors.lastname: Fadley
authors.affiliation: ■Unité Mixte de Physique CNRS/Thales,1 Avenue A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France.
authors.forename: Cécile
authors.initials: C
authors.lastname: Carrétéro
authors.affiliation: ■Unité Mixte de Physique CNRS/Thales,1 Avenue A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France.|▲National Institute of Advanced Industrial Science and Technology (AIST), JST, PRESTO, Tsukuba, Ibaraki 305-8562, Japan.
authors.forename: Hiroyuki
authors.initials: H
authors.lastname: Yamada
authors.affiliation: †Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud XI, 91405 Orsay, France.
authors.forename: Katia
authors.initials: K
authors.lastname: March
authors.affiliation: ■Unité Mixte de Physique CNRS/Thales,1 Avenue A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France.
authors.forename: Vincent
authors.initials: V
authors.lastname: Garcia
authors.affiliation: ■Unité Mixte de Physique CNRS/Thales,1 Avenue A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France.
authors.forename: Stéphane
authors.initials: S
authors.lastname: Fusil
authors.affiliation: ■Unité Mixte de Physique CNRS/Thales,1 Avenue A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France.
authors.forename: Agnès
authors.initials: A
authors.lastname: Barthélémy
authors.affiliation: †Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud XI, 91405 Orsay, France.
authors.forename: Odile
authors.initials: O
authors.lastname: Stéphan
authors.affiliation: †Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud XI, 91405 Orsay, France.
authors.forename: Christian
authors.initials: C
authors.lastname: Colliex
authors.affiliation: ■Unité Mixte de Physique CNRS/Thales,1 Avenue A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France.
authors.forename: Manuel
authors.initials: M
authors.lastname: Bibes
keywords: Aberration-corrected STEM-EELS; HAXPES; Mott insulator; ferroelectricity; interface charge accumulation; interface physics