title: Large room-temperature electroresistance in dual-modulated ferroelectric tunnel barriers.
abstract: Pt/BaTiO3/La0.7Sr0.3MnO3 tunnel junctions, at negative voltage bias, for two polarization directions are represented. It is demonstrated that reversing the polarization direction of a ferroelectric barrier in a tunnel junction leads to a change of junction conductance and capacitance, with concomitant variations on the barrier height and effective thickness, both contributing to produce larger electroresistance.
authors.affiliation: Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia, Spain; LNESS-Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100, Como, Italy.
authors.forename: Greta
authors.initials: G
authors.lastname: Radaelli
authors.forename: Diego
authors.initials: D
authors.lastname: Gutiérrez
authors.forename: Florencio
authors.initials: F
authors.lastname: Sánchez
authors.forename: Riccardo
authors.initials: R
authors.lastname: Bertacco
authors.forename: Massimiliano
authors.initials: M
authors.lastname: Stengel
authors.forename: Josep
authors.initials: J
authors.lastname: Fontcuberta
keywords: Schottky barrier; depletion width; electroresistance; ferroelectric tunnel junction