title: Electromagnetic induction heating for single crystal graphene growth: morphology control by rapid heating and quenching.
abstract: The direct observation of single crystal graphene growth and its shape evolution is of fundamental importance to the understanding of graphene growth physicochemical mechanisms and the achievement of wafer-scale single crystalline graphene. Here we demonstrate the controlled formation of single crystal graphene with varying shapes, and directly observe the shape evolution of single crystal graphene by developing a localized-heating and rapid-quenching chemical vapor deposition (CVD) system based on electromagnetic induction heating. Importantly, rational control of circular, hexagonal, and dendritic single crystalline graphene domains can be readily obtained for the first time by changing the growth condition. Systematic studies suggest that the graphene nucleation only occurs during the initial stage, while the domain density is independent of the growth temperatures due to the surface-limiting effect. In addition, the direct observation of graphene domain shape evolution is employed for the identification of competing growth mechanisms including diffusion-limited, attachment-limited, and detachment-limited processes. Our study not only provides a novel method for morphology-controlled graphene synthesis, but also offers fundamental insights into the kinetics of single crystal graphene growth.
authors.affiliation: Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350002, People's Republic of China.
authors.forename: Chaoxing
authors.initials: C
authors.lastname: Wu
authors.affiliation: Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350002, People's Republic of China.
authors.forename: Fushan
authors.initials: F
authors.lastname: Li
authors.affiliation: Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350002, People's Republic of China.
authors.forename: Wei
authors.initials: W
authors.lastname: Chen
authors.affiliation: Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350002, People's Republic of China.
authors.forename: Chandrasekar Perumal
authors.initials: CP
authors.lastname: Veeramalai
authors.affiliation: Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350002, People's Republic of China.
authors.forename: Poh Choon
authors.initials: PC
authors.lastname: Ooi
authors.affiliation: Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350002, People's Republic of China.
authors.forename: Tailiang
authors.initials: T
authors.lastname: Guo