title: High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111).
abstract: The high speed on-off performance of GaN-based light-emitting diodes (LEDs) grown in c-plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric polarization. This work demonstrates that this limitation can be overcome by m-planar core-shell InGaN/GaN nanowire LEDs grown on Si(111). Time-resolved electroluminescence studies exhibit 90-10% rise- and fall-times of about 220 ps under GHz electrical excitation. The data underline the potential of these devices for optical data communication in polymer fibers and free space.
authors.affiliation: †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
authors.forename: Robert
authors.initials: R
authors.lastname: Koester
authors.affiliation: †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
authors.forename: Daniel
authors.initials: D
authors.lastname: Sager
authors.affiliation: †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
authors.forename: Wolf-Alexander
authors.initials: WA
authors.lastname: Quitsch
authors.affiliation: †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
authors.forename: Oliver
authors.initials: O
authors.lastname: Pfingsten
authors.affiliation: †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
authors.forename: Artur
authors.initials: A
authors.lastname: Poloczek
authors.affiliation: †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
authors.forename: Sarah
authors.initials: S
authors.lastname: Blumenthal
authors.affiliation: †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
authors.forename: Gregor
authors.initials: G
authors.lastname: Keller
authors.affiliation: †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
authors.forename: Werner
authors.initials: W
authors.lastname: Prost
authors.affiliation: †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
authors.forename: Gerd
authors.initials: G
authors.lastname: Bacher
authors.affiliation: †Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
authors.forename: Franz-Josef
authors.initials: FJ
authors.lastname: Tegude
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D008422:Materials Testing; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*
chemical_list: D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride; D012825:Silicon
keywords: GaInN/GaN; LED; electroluminescence; high frequency operation; nanowire; photoluminescence