title: Arc-melting to narrow the bandgap of oxide semiconductors.
abstract: The bandgap of a series of oxide semiconductors is narrowed by a quick and facile arc-melting method. A defective structure is formed in the fast melting and cooling process without changing its phase structure. Enhanced optical and electrical properties are found in the arc-melted oxide, such as enhanced photocatalytic properties of the arc-melted ZnO under visible light.
authors.affiliation: State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
authors.forename: Gang
authors.initials: G
authors.lastname: Ou
authors.forename: Dongke
authors.initials: D
authors.lastname: Li
authors.forename: Wei
authors.initials: W
authors.lastname: Pan
authors.forename: Qinghua
authors.initials: Q
authors.lastname: Zhang
authors.forename: Ben
authors.initials: B
authors.lastname: Xu
authors.forename: Lin
authors.initials: L
authors.lastname: Gu
authors.forename: Cewen
authors.initials: C
authors.lastname: Nan
authors.forename: Hui
authors.initials: H
authors.lastname: Wu
keywords: bandgap engineering; defect chemistry; inorganic semiconductors; photocatalysts