title: Single-step deposition of high-mobility graphene at reduced temperatures.
abstract: Current methods of chemical vapour deposition (CVD) of graphene on copper are complicated by multiple processing steps and by high temperatures required in both preparing the copper and inducing subsequent film growth. Here we demonstrate a plasma-enhanced CVD chemistry that enables the entire process to take place in a single step, at reduced temperatures (<420 °C), and in a matter of minutes. Growth on copper foils is found to nucleate from arrays of well-aligned domains, and the ensuing films possess sub-nanometre smoothness, excellent crystalline quality, low strain, few defects and room-temperature electrical mobility up to (6.0±1.0) × 10(4) cm(2) V(-1) s(-1), better than that of large, single-crystalline graphene derived from thermal CVD growth. These results indicate that elevated temperatures and crystalline substrates are not necessary for synthesizing high-quality graphene.
authors.affiliation: Department of Physics, California Institute of Technology, Pasadena, California 91125, USA.
authors.forename: D A
authors.initials: DA
authors.lastname: Boyd
authors.affiliation: Department of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA.
authors.forename: W-H
authors.initials: WH
authors.lastname: Lin
authors.affiliation: 1] Department of Physics, California Institute of Technology, Pasadena, California 91125, USA [2] Institute of Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA.
authors.forename: C-C
authors.initials: CC
authors.lastname: Hsu
authors.affiliation: 1] Department of Physics, California Institute of Technology, Pasadena, California 91125, USA [2] Institute of Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA.
authors.forename: M L
authors.initials: ML
authors.lastname: Teague
authors.affiliation: 1] Department of Physics, California Institute of Technology, Pasadena, California 91125, USA [2] Institute of Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA.
authors.forename: C-C
authors.initials: CC
authors.lastname: Chen
authors.affiliation: Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan 10617.
authors.forename: Y-Y
authors.initials: YY
authors.lastname: Lo
authors.affiliation: Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan 115.
authors.forename: W-Y
authors.initials: WY
authors.lastname: Chan
authors.affiliation: Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan 115.
authors.forename: W-B
authors.initials: WB
authors.lastname: Su
authors.affiliation: Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan 10617.
authors.forename: T-C
authors.initials: TC
authors.lastname: Cheng
authors.affiliation: Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan 115.
authors.forename: C-S
authors.initials: CS
authors.lastname: Chang
authors.affiliation: Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan 10617.
authors.forename: C-I
authors.initials: CI
authors.lastname: Wu
authors.affiliation: 1] Department of Physics, California Institute of Technology, Pasadena, California 91125, USA [2] Institute of Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA [3] Kavli Nanoscience Institute, California Institute of Technology, Pasadena, California, 91125, USA.
authors.forename: N-C
authors.initials: NC
authors.lastname: Yeh