title: Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride.
abstract: The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 μm with a growth rate of ~1 nm min(-1) or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 μm min(-1), thereby promoting graphene domains up to 20 μm in size to be synthesized via chemical vapour deposition (CVD) on hexagonal boron nitride (h-BN). Hall measurements show that the mobility of the sample reaches 20,000 cm(2) V(-1) s(-1) at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.
authors.affiliation: 1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China [2] Graduate University of the Chinese Academy of Sciences, Beijing 100049, China.
authors.forename: Shujie
authors.initials: S
authors.lastname: Tang
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
authors.forename: Haomin
authors.initials: H
authors.lastname: Wang
authors.affiliation: 1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China [2] School of Physics and Electronics, Central South University, Changsha 410083, China.
authors.forename: Hui Shan
authors.initials: HS
authors.lastname: Wang
authors.affiliation: 1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China [2] School of Physics and Electronics, Central South University, Changsha 410083, China.
authors.forename: Qiujuan
authors.initials: Q
authors.lastname: Sun
authors.affiliation: Institute of Textiles and Clothing, Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, China.
authors.forename: Xiuyun
authors.initials: X
authors.lastname: Zhang
authors.affiliation: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
authors.forename: Chunxiao
authors.initials: C
authors.lastname: Cong
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
authors.forename: Hong
authors.initials: H
authors.lastname: Xie
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
authors.forename: Xiaoyu
authors.initials: X
authors.lastname: Liu
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
authors.forename: Xiaohao
authors.initials: X
authors.lastname: Zhou
authors.affiliation: CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.
authors.forename: Fuqiang
authors.initials: F
authors.lastname: Huang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
authors.forename: Xiaoshuang
authors.initials: X
authors.lastname: Chen
authors.affiliation: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
authors.forename: Ting
authors.initials: T
authors.lastname: Yu
authors.affiliation: Institute of Textiles and Clothing, Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, China.
authors.forename: Feng
authors.initials: F
authors.lastname: Ding
authors.affiliation: 1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China [2] School of Physical Science and Technology, ShanghaiTech University, 319 Yueyang Road, Shanghai 200031, China.
authors.forename: Xiaoming
authors.initials: X
authors.lastname: Xie
authors.affiliation: 1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China [2] School of Physical Science and Technology, ShanghaiTech University, 319 Yueyang Road, Shanghai 200031, China.
authors.forename: Mianheng
authors.initials: M
authors.lastname: Jiang