title: Certified ion implantation fluence by high accuracy RBS.
abstract: From measurements over the last two years we have demonstrated that the charge collection system based on Faraday cups can robustly give near-1% absolute implantation fluence accuracy for our electrostatically scanned 200 kV Danfysik ion implanter, using four-point-probe mapping with a demonstrated accuracy of 2%, and accurate Rutherford backscattering spectrometry (RBS) of test implants from our quality assurance programme. The RBS is traceable to the certified reference material IRMM-ERM-EG001/BAM-L001, and involves convenient calibrations both of the electronic gain of the spectrometry system (at about 0.1% accuracy) and of the RBS beam energy (at 0.06% accuracy). We demonstrate that accurate RBS is a definitive method to determine quantity of material. It is therefore useful for certifying high quality reference standards, and is also extensible to other kinds of samples such as thin self-supporting films of pure elements. The more powerful technique of Total-IBA may inherit the accuracy of RBS.
authors.affiliation: University of Surrey Ion Beam Centre, Guildford GU2 7XH, England. j.colaux@surrey.ac.uk.
authors.forename: Julien L
authors.initials: JL
authors.lastname: Colaux
authors.forename: Chris
authors.initials: C
authors.lastname: Jeynes
authors.forename: Keith C
authors.initials: KC
authors.lastname: Heasman
authors.forename: Russell M
authors.initials: RM
authors.lastname: Gwilliam