title: The coupled atom transistor.
abstract: We describe the first implementation of a coupled atom transistor where two shallow donors (P or As) are implanted in a nanoscale silicon nanowire and their electronic levels are controlled with three gate voltages. Transport spectroscopy through these donors placed in series is performed both at zero and microwave frequencies. The coherence of the charge transfer between the two donors is probed by Landau-Zener-Stückelberg interferometry. Single-charge transfer at zero bias (electron pumping) has been performed and the crossover between the adiabatic and non-adiabatic regimes is studied.
authors.affiliation: University Grenoble Alpes, INAC, F-38000 Grenoble, France and CEA, INAC-SPSMS, F-38054 Grenoble, France.
authors.forename: X
authors.initials: X
authors.lastname: Jehl
authors.forename: B
authors.initials: B
authors.lastname: Voisin
authors.forename: B
authors.initials: B
authors.lastname: Roche
authors.forename: E
authors.initials: E
authors.lastname: Dupont-Ferrier
authors.forename: S
authors.initials: S
authors.lastname: De Franceschi
authors.forename: M
authors.initials: M
authors.lastname: Sanquer
authors.forename: M
authors.initials: M
authors.lastname: Cobian
authors.forename: Y-M
authors.initials: YM
authors.lastname: Niquet
authors.forename: B
authors.initials: B
authors.lastname: Sklénard
authors.forename: O
authors.initials: O
authors.lastname: Cueto
authors.forename: R
authors.initials: R
authors.lastname: Wacquez
authors.forename: M
authors.initials: M
authors.lastname: Vinet