title: Recycling process for recovery of gallium from GaN an e-waste of LED industry through ball milling, annealing and leaching.
abstract: Waste dust generated during manufacturing of LED contains significant amounts of gallium and indium, needs suitable treatment and can be an important resource for recovery. The LED industry waste dust contains primarily gallium as GaN. Leaching followed by purification technology is the green and clean technology. To develop treatment and recycling technology of these GaN bearing e-waste, leaching is the primary stage. In our current investigation possible process for treatment and quantitative leaching of gallium and indium from the GaN bearing e-waste or waste of LED industry dust has been developed. To recycle the waste and quantitative leaching of gallium, two different process flow sheets have been proposed. In one, process first the GaN of the waste the LED industry dust was leached at the optimum condition. Subsequently, the leach residue was mixed with Na2CO3, ball milled followed by annealing, again leached to recover gallium. In the second process, the waste LED industry dust was mixed with Na2CO3, after ball milling and annealing, followed acidic leaching. Without pretreatment, the gallium leaching was only 4.91 w/w % using 4M HCl, 100°C and pulp density of 20g/L. After mechano-chemical processing, both these processes achieved 73.68 w/w % of gallium leaching at their optimum condition. The developed process can treat and recycle any e-waste containing GaN through ball milling, annealing and leaching.
authors.affiliation: Institute for Advanced Engineering (IAE) Advanced Materials & Processing Center, Yongin-Si 449-863, Republic of Korea. Electronic address: swain@iae.re.kr.
authors.forename: Basudev
authors.initials: B
authors.lastname: Swain
authors.affiliation: Institute for Advanced Engineering (IAE) Advanced Materials & Processing Center, Yongin-Si 449-863, Republic of Korea.
authors.forename: Chinmayee
authors.initials: C
authors.lastname: Mishra
authors.affiliation: Institute for Advanced Engineering (IAE) Advanced Materials & Processing Center, Yongin-Si 449-863, Republic of Korea.
authors.forename: Leeseung
authors.initials: L
authors.lastname: Kang
authors.affiliation: Institute for Advanced Engineering (IAE) Advanced Materials & Processing Center, Yongin-Si 449-863, Republic of Korea. Electronic address: kspark@iae.re.kr.
authors.forename: Kyung-Soo
authors.initials: KS
authors.lastname: Park
authors.affiliation: Institute for Advanced Engineering (IAE) Advanced Materials & Processing Center, Yongin-Si 449-863, Republic of Korea.
authors.forename: Chan Gi
authors.initials: CG
authors.lastname: Lee
authors.affiliation: Institute for Advanced Engineering (IAE) Advanced Materials & Processing Center, Yongin-Si 449-863, Republic of Korea. Electronic address: hshong@iae.re.kr.
authors.forename: Hyun Seon
authors.initials: HS
authors.lastname: Hong
mesh_terms: D059029:Electronic Waste / Q000032:analysis*; D005708:Gallium / Q000032:analysis*; D007220:Industrial Waste / Q000032:analysis; D059027:Recycling / Q000379:methods*; D018505:Waste Management / Q000379:methods*
chemical_list: D007220:Industrial Waste; C473348:gallium nitride; D005708:Gallium
keywords: Chemical leaching; Gallium; LED industry Waste; LED recycling; e-waste recycling