title: Defect/oxygen assisted direct write technique for nanopatterning graphene.
abstract: High resolution nanopatterning of graphene enables manipulation of electronic, optical and sensing properties of graphene. In this work we present a straightforward technique that does not require any lithographic mask to etch nanopatterns into graphene. The technique relies on the damaged graphene to be etched selectively in an oxygen rich environment with respect to non-damaged graphene. Sub-40 nm features were etched into graphene by selectively exposing it to a 100 keV electron beam and then etching the damaged areas away in a conventional oven. Raman spectroscopy was used to evaluate the extent of damage induced by the electron beam as well as the effects of the selective oxidative etching on the remaining graphene.
authors.affiliation: DTU Nanotech-Center for Nanostructured Graphene, Technical University of Denmark, Building 345 East, DK-2800 Kgs. Lyngby, Denmark. Alberto.Cagliani@nanotech.dtu.dk Peter.Boggild@nanotech.dtu.dk.
authors.forename: Alberto
authors.initials: A
authors.lastname: Cagliani
authors.forename: Niclas
authors.initials: N
authors.lastname: Lindvall
authors.forename: Martin Benjamin Barbour Spanget
authors.initials: MB
authors.lastname: Larsen
authors.forename: David M A
authors.initials: DM
authors.lastname: Mackenzie
authors.forename: Bjarke Sørensen
authors.initials: BS
authors.lastname: Jessen
authors.forename: Timothy J
authors.initials: TJ
authors.lastname: Booth
authors.forename: Peter
authors.initials: P
authors.lastname: Bøggild