title: Mapping motion of antiferromagnetic interfacial uncompensated magnetic moment in exchange-biased bilayers.
abstract: In this work, disordered-IrMn3/insulating-Y3Fe5O12 exchange-biased bilayers are studied. The behavior of the net magnetic moment ΔmAFM in the antiferromagnet is directly probed by anomalous and planar Hall effects, and anisotropic magnetoresistance. The ΔmAFM is proved to come from the interfacial uncompensated magnetic moment. We demonstrate that the exchange bias and rotational hysteresis loss are induced by partial rotation and irreversible switching of the ΔmAFM. In the athermal training effect, the state of the ΔmAFM cannot be recovered after one cycle of hysteresis loop. This work highlights the fundamental role of the ΔmAFM in the exchange bias and facilitates the manipulation of antiferromagnetic spintronic devices.
authors.affiliation: Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China.
authors.forename: X
authors.initials: X
authors.lastname: Zhou
authors.affiliation: Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China.
authors.forename: L
authors.initials: L
authors.lastname: Ma
authors.affiliation: Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China.
authors.forename: Z
authors.initials: Z
authors.lastname: Shi
authors.affiliation: Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China.
authors.forename: W J
authors.initials: WJ
authors.lastname: Fan
authors.affiliation: Department of Physics, University of York, York YO10 5DD, United Kingdom.
authors.forename: R F L
authors.initials: RF
authors.lastname: Evans
authors.affiliation: The Laboratory for Electron and X-ray Instrumentation, Calit2, University of California, Irvine, CA 92697-2800, USA.
authors.forename: Jian-Guo
authors.initials: JG
authors.lastname: Zheng
authors.affiliation: Department of Physics, University of York, York YO10 5DD, United Kingdom.
authors.forename: R W
authors.initials: RW
authors.lastname: Chantrell
authors.affiliation: Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine- boulevard des aiguillettes, BP 70239, Vandoeuvre cedex F-54506, France.
authors.forename: S
authors.initials: S
authors.lastname: Mangin
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
authors.forename: H W
authors.initials: HW
authors.lastname: Zhang
authors.affiliation: Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China.
authors.forename: S M
authors.initials: SM
authors.lastname: Zhou