title: Silicene nanomesh.
abstract: Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the wall between the neighboring holes is even. The size of the band gap increases with the reduced W and has a simple relation with the ratio of the removed Si atom and the total Si atom numbers of silicene. Quantum transport simulation reveals that the sub-10 nm single-gated SNM field effect transistors show excellent performance at zero temperature but such a performance is greatly degraded at room temperature.
authors.affiliation: 1] Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University, Xi'an 710072, P. R. China [2] School of Physics and Telecommunication Engineering, Shaanxi University of Technology, Hanzhong 723001, P. R. China.
authors.forename: Feng
authors.initials: F
authors.lastname: Pan
authors.affiliation: State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China.
authors.forename: Yangyang
authors.initials: Y
authors.lastname: Wang
authors.affiliation: State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China.
authors.forename: Kaili
authors.initials: K
authors.lastname: Jiang
authors.affiliation: State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China.
authors.forename: Zeyuan
authors.initials: Z
authors.lastname: Ni
authors.affiliation: School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, P. R. China.
authors.forename: Jianhua
authors.initials: J
authors.lastname: Ma
authors.affiliation: School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen 518055, P. R. China.
authors.forename: Jiaxin
authors.initials: J
authors.lastname: Zheng
authors.affiliation: 1] State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China [2] Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China.
authors.forename: Ruge
authors.initials: R
authors.lastname: Quhe
authors.affiliation: State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China.
authors.forename: Junjie
authors.initials: J
authors.lastname: Shi
authors.affiliation: 1] Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China [2] State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China.
authors.forename: Jinbo
authors.initials: J
authors.lastname: Yang
authors.affiliation: Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University, Xi'an 710072, P. R. China.
authors.forename: Changle
authors.initials: C
authors.lastname: Chen
authors.affiliation: 1] Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China [2] State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China.
authors.forename: Jing
authors.initials: J
authors.lastname: Lu