title: TiS3 transistors with tailored morphology and electrical properties.
abstract: Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets, which, according to density functional theory calculations, leads to an n-type doping.
authors.affiliation: Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628, CJ, Delft, The Netherlands.
authors.forename: Joshua O
authors.initials: JO
authors.lastname: Island
authors.forename: Mariam
authors.initials: M
authors.lastname: Barawi
authors.forename: Robert
authors.initials: R
authors.lastname: Biele
authors.forename: Adrián
authors.initials: A
authors.lastname: Almazán
authors.forename: José M
authors.initials: JM
authors.lastname: Clamagirand
authors.forename: José R
authors.initials: JR
authors.lastname: Ares
authors.forename: Carlos
authors.initials: C
authors.lastname: Sánchez
authors.forename: Herre S J
authors.initials: HS
authors.lastname: van der Zant
authors.forename: José V
authors.initials: JV
authors.lastname: Álvarez
authors.forename: Roberto
authors.initials: R
authors.lastname: D'Agosta
authors.forename: Isabel J
authors.initials: IJ
authors.lastname: Ferrer
authors.forename: Andres
authors.initials: A
authors.lastname: Castellanos-Gomez
keywords: TiS3; density functional theory; exfoliation potential; field-effect transistors; mechanical exfoliation; monolayers; morphology; sulphur vacancy