title: Unconventional resistive switching behavior in ferroelectric tunnel junctions.
abstract: We investigate an unconventional resistive switching (RS) behavior in La0.67Sr0.33MnO3/BaTiO3/metal (LSMO/BTO) ferroelectric tunnel junctions (FTJs), which is dominated by the variation of the barrier potential profile modulated by the migration of oxygen vacancies in the p-LSMO/n-BTO junction. The LSMO/BTO/Co junction exhibits a remarkable self-rectifying effect ascribed to the high-density interface state at the BTO/Co interface, in contrast to the symmetric conductivity when the top metal electrode is inert Pt. The effects of ferroelectric polarization on the RS behavior are also emphasized. Our work builds a bridge between FTJs and resistive random access memory devices.
authors: School of Materials Science and Engineering, Central South University, Changsha 410083, China.
authors: H J
authors: HJ
authors: Mao
authors: C
authors: C
authors: Song
authors: L R
authors: LR
authors: Xiao
authors: S
authors: S
authors: Gao
authors: B
authors: B
authors: Cui
authors: J J
authors: JJ
authors: Peng
authors: F
authors: F
authors: Li
authors: F
authors: F
authors: Pan