title: Manganite-based memristive heterojunction with tunable non-linear I-V characteristics.
abstract: A resistive random access memory (ReRAM) based on the memristive effect allows high-density integration through a cross-point array (CPA) structure. However, a significant common drawback of the CPA configuration is the crosstalk between cells. Here, we introduce a solution based on a novel heterojunction stack solely made of members of the perovskite manganite family Pr(1-x)Ca(x)MnO3 (PCMO) and CaMnO(3-δ) (CMO) which show electroforming-free bipolar resistive switching. The heterojunction consists of rectifying interfaces and shows a symmetrical and tunable non-linear current-voltage curve. The spectromicroscopic measurements support the scenario of specialized roles, with the memristive effect taking place at the active Al-PCMO interface via a redox mechanism, while non-linearity was achieved by adopting a rectifying double interface PCMO-CMO-PCMO.
authors: Department of Materials Science and Engineering, Yonsei University, Seodaemun-Ku, Seoul 120-749, Korea. hhpark@yonsei.ac.kr.
authors: Hong-Sub
authors: HS
authors: Lee
authors: Hyung-Ho
authors: HH
authors: Park
authors: M J
authors: MJ
authors: Rozenberg