title: GaP Raman Terahertz high accuracy spectrometer and its application to detect organic and inorganic crystalline defects.
abstract: One of the most important uses of THz spectrometry is to detect defects in molecular structure or in crystals efficiently. We applied GaP Raman THz (GRT) spectrometer to detect and evaluate defects in inorganic and organic materials. High THz-wave absorption due to high defect density of GaSe crystal lowered the efficiency of THz wave generation, when the crystal is used as nonlinear material for DFG (Difference Frequency Generation). Defects in organic molecules could be observed as changes in frequency, intensities of the absorption, and broadenings of the spectra.
authors: Semiconductor Research Institute, Sendai, Japan .
authors: Jun-Ichi
authors: J
authors: Nishizawa
authors: Semiconductor Research Institute, Sendai, Japan .
authors: Ken
authors: K
authors: Suto
authors: Semiconductor Research Institute, Sendai, Japan .
authors: Tetsuo
authors: T
authors: Sasaki
authors: Department of Material Science, Tohoku University, Sendai, Japan .
authors: Tadao
authors: T
authors: Tanabe
authors: Semiconductor Research Institute, Sendai, Japan .
authors: Takenori
authors: T
authors: Tanno
authors: Department of Material Science, Tohoku University, Sendai, Japan .
authors: Yutaka
authors: Y
authors: Oyama
authors: Department of Material Science, Tohoku University, Sendai, Japan .
authors: Fumikazu
authors: F
authors: Sato
keywords: GaP Raman THz (GRT) spectrometer; GaSe; Terahertz; asparagine; defects; glucose