title: Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon.
abstract: Electrical detection of spins is an essential tool for understanding the dynamics of spins, with applications ranging from optoelectronics and spintronics, to quantum information processing. For electron spins bound to donors in silicon, bulk electrically detected magnetic resonance has relied on coupling to spin readout partners such as paramagnetic defects or conduction electrons, which fundamentally limits spin coherence times. Here we demonstrate electrical detection of donor electron spin resonance in an ensemble by transport through a silicon device, using optically driven donor-bound exciton transitions. We measure electron spin Rabi oscillations, and obtain long electron spin coherence times, limited only by the donor concentration. We also experimentally address critical issues such as non-resonant excitation, strain, and electric fields, laying the foundations for realizing a single-spin readout method with relaxed magnetic field and temperature requirements compared with spin-dependent tunnelling, enabling donor-based technologies such as quantum sensing.
authors: 1] London Centre for Nanotechnology, University College London, London WC1H 0AH, UK [2] Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK.
authors: C C
authors: CC
authors: Lo
authors: London Centre for Nanotechnology, University College London, London WC1H 0AH, UK.
authors: M
authors: M
authors: Urdampilleta
authors: London Centre for Nanotechnology, University College London, London WC1H 0AH, UK.
authors: P
authors: P
authors: Ross
authors: Hitachi Cambridge Laboratory, J. J. Thomson Avenue Cambridge CB3 0HE, UK.
authors: M F
authors: MF
authors: Gonzalez-Zalba
authors: London Centre for Nanotechnology, University College London, London WC1H 0AH, UK.
authors: J
authors: J
authors: Mansir
authors: Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
authors: S A
authors: SA
authors: Lyon
authors: Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada.
authors: M L W
authors: ML
authors: Thewalt
authors: 1] London Centre for Nanotechnology, University College London, London WC1H 0AH, UK [2] Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK.
authors: J J L
authors: JJ
authors: Morton