title: Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids.
abstract: The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. This hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.
authors: Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong SAR, China.
authors: Ye
authors: Y
authors: Zhou
authors: Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong SAR, China.
authors: Su-Ting
authors: ST
authors: Han
authors: School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology (QUT), GPO Box 2434, Brisbane, QLD 4001, Australia.
authors: Prashant
authors: P
authors: Sonar
authors: Nanotechnology Center, Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China.
authors: Xinlei
authors: X
authors: Ma
authors: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.
authors: Jihua
authors: J
authors: Chen
authors: Nanotechnology Center, Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China.
authors: Zijian
authors: Z
authors: Zheng
authors: 1] Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong SAR, China [2] Shenzhen Research Institute, City University of Hong Kong, High-Tech Zone, Nanshan District, Shenzhen. 518057, China.
authors: V A L
authors: VA
authors: Roy