title: Magnetoelectric quasi-(0-3) nanocomposite heterostructures.
abstract: Magnetoelectric composite thin films hold substantial promise for applications in novel multifunctional devices. However, there are presently shortcomings for both the extensively studied bilayer epitaxial (2-2) and vertically architectured nanocomposite (1-3) film systems, restricting their applications. Here we design a novel growth strategy to fabricate an architectured nanocomposite heterostructure with magnetic quasiparticles (0) embedded in a ferroelectric film matrix (3) by alternately growing (2-2) and (1-3) layers within the film. The new heteroepitaxial films not only overcome the clamping effect from substrate, but also significantly suppress the leakage current paths through the ferromagnetic phase. We demonstrate, by focusing on switching characteristics of the piezoresponse, that the heterostructure shows magnetic field dependence of piezoelectricity due to the improved coupling enabled by good connectivity amongst the piezoelectric and magnetostrictive phases. This new architectured magnetoelectric heterostructures may open a new avenue for applications of magnetoelectric films in micro-devices.
authors: Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA.
authors: Yanxi
authors: Y
authors: Li
authors: Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.
authors: Zhongchang
authors: Z
authors: Wang
authors: 1] Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA [2] Asylum Research, Santa Barbara, California 93117, USA.
authors: Jianjun
authors: J
authors: Yao
authors: Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors: Tiannan
authors: T
authors: Yang
authors: Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA.
authors: Zhiguang
authors: Z
authors: Wang
authors: Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors: Jia-Mian
authors: JM
authors: Hu
authors: Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.
authors: Chunlin
authors: C
authors: Chen
authors: Institute of Engineering Innovation, The University of Tokyo, 2-11-16, Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan.
authors: Rong
authors: R
authors: Sun
authors: Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA.
authors: Zhipeng
authors: 0000000325282465
authors: Z
authors: Tian
authors: Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA.
authors: Jiefang
authors: J
authors: Li
authors: Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors: Long-Qing
authors: LQ
authors: Chen
authors: Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA.
authors: Dwight
authors: D
authors: Viehland