title: Permeability-controlled optical modulator with Tri-gate metamaterial: control of permeability on InP-based photonic integration platform.
abstract: Metamaterials are artificially structured materials that can produce innovative optical functionalities such as negative refractive index, invisibility cloaking, and super-resolution imaging. Combining metamaterials with semiconductors enables us to develop novel optoelectronic devices based on the new concept of operation. Here we report the first experimental demonstration of a permeability-controlled waveguide optical modulator consisting of an InGaAsP/InP Mach-Zehnder interferometer with 'tri-gate' metamaterial attached on its arms. The tri-gate metamaterial consists of metal resonator arrays and triple-gate field effect elements. It changes its permeability with a change in the controlling gate voltage, thereby changing the refractive index of the interferometer arm to switch the modulator with an extinction ratio of 6.9 dB at a wavelength of 1.55 μm. The result shows the feasibility of InP-based photonic integrated devices that can produce new functions by controlling their permeability as well as their permittivity.
authors: 1] Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo 152-8552, Japan [2] RIKEN Metamaterials Laboratory, Saitama 351-0198, Japan.
authors: Tomohiro
authors: T
authors: Amemiya
authors: 1] RIKEN Metamaterials Laboratory, Saitama 351-0198, Japan [2] Department of Electrical &Electronic Engineering, Okayama University, Okayama 700-8530, Japan.
authors: Atsushi
authors: A
authors: Ishikawa
authors: Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152-8552, Japan.
authors: Toru
authors: T
authors: Kanazawa
authors: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo 152-8552, Japan.
authors: JoonHyung
authors: J
authors: Kang
authors: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo 152-8552, Japan.
authors: Nobuhiko
authors: N
authors: Nishiyama
authors: Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152-8552, Japan.
authors: Yasuyuki
authors: Y
authors: Miyamoto
authors: 1] RIKEN Metamaterials Laboratory, Saitama 351-0198, Japan [2] Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Kanagawa 226-8502, Japan [3] Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0020, Japan.
authors: Takuo
authors: T
authors: Tanaka
authors: 1] Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo 152-8552, Japan [2] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo 152-8552, Japan.
authors: Shigehisa
authors: S
authors: Arai