title: Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.
abstract: This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.
authors: †Department of Electronic Engineering, Incheon National University, Incheon 406-772, Korea.
authors: Sung Hun
authors: SH
authors: Jin
authors: ⊥Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.
authors: Seung-Kyun
authors: SK
authors: Kang
authors: §Department of Electrical Engineering, Seoul National University, Seoul 151-600, Korea.
authors: In-Tak
authors: IT
authors: Cho
authors: ⊥Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.
authors: Sang Youn
authors: SY
authors: Han
authors: ⊥Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.
authors: Ha Uk
authors: HU
authors: Chung
authors: ⊥Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.
authors: Dong Joon
authors: DJ
authors: Lee
authors: §Department of Electrical Engineering, Seoul National University, Seoul 151-600, Korea.
authors: Jongmin
authors: J
authors: Shin
authors: †Department of Electronic Engineering, Incheon National University, Incheon 406-772, Korea.
authors: Geun Woo
authors: GW
authors: Baek
authors: ∥Center for Neuroscience Imaging Research (CNIR), Institute of Basic Science (IBS), School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 440-746, Korea.
authors: Tae-il
authors: TI
authors: Kim
authors: §Department of Electrical Engineering, Seoul National University, Seoul 151-600, Korea.
authors: Jong-Ho
authors: JH
authors: Lee
authors: ‡Department of Materials Science and Engineering, Chemistry, Mechanical Science and Engineering, Electrical and Computer Engineering, Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.
authors: John A
authors: JA
authors: Rogers
mesh_terms: D001672:Biocompatible Materials / Q000138:chemical synthesis*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008422:Materials Testing; D012995:Solubility; D014173:Transistors, Electronic; D014867:Water / Q000737:chemistry*; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D001672:Biocompatible Materials; D007204:Indium; D014867:Water; C038863:gallium oxide; C047711:indium oxide; D005708:Gallium; D015034:Zinc Oxide
keywords: PVA; a-IGZO; dissolution; inverter; ring oscillators; transient electronics