title: Pathway to the piezoelectronic transduction logic device.
abstract: The piezoelectronic transistor (PET) has been proposed as a transduction device not subject to the voltage limits of field-effect transistors. The PET transduces voltage to stress, activating a facile insulator-metal transition, thereby achieving multigigahertz switching speeds, as predicted by modeling, at lower power than the comparable generation field effect transistor (FET). Here, the fabrication and measurement of the first physical PET devices are reported, showing both on/off switching and cycling. The results demonstrate the realization of a stress-based transduction principle, representing the early steps on a developmental pathway to PET technology with potential to contribute to the IT industry.
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors: P M
authors: PM
authors: Solomon
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors: B A
authors: BA
authors: Bryce
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.|‡Department of Physics, Auburn University, Auburn, Alabama 36849, United States.
authors: M A
authors: MA
authors: Kuroda
authors: §Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States.
authors: R
authors: R
authors: Keech
authors: §Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States.
authors: S
authors: S
authors: Shetty
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors: T M
authors: TM
authors: Shaw
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors: M
authors: M
authors: Copel
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors: L-W
authors: LW
authors: Hung
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors: A G
authors: AG
authors: Schrott
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors: C
authors: C
authors: Armstrong
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors: M S
authors: MS
authors: Gordon
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors: K B
authors: KB
authors: Reuter
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors: T N
authors: TN
authors: Theis
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors: W
authors: W
authors: Haensch
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors: S M
authors: SM
authors: Rossnagel
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors: H
authors: H
authors: Miyazoe
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors: B G
authors: BG
authors: Elmegreen
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors: X-H
authors: XH
authors: Liu
authors: §Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States.
authors: S
authors: S
authors: Trolier-McKinstry
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors: G J
authors: GJ
authors: Martyna
authors: †IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors: D M
authors: DM
authors: Newns
keywords: Nanoelectromechanical systems (NEMS); electronic transport; piezoelectric; piezoresistance