title: In situ fabrication and optoelectronic analysis of axial CdS/p-Si nanowire heterojunctions in a high-resolution transmission electron microscope.
abstract: A high-precision technique was utilized to construct and characterize axial nanowire heterojunctions inside a high-resolution transmission electron microscope (HRTEM). By an in-tandem technique using an ultra-sharp tungsten probe as the nanomanipulator and an optical fiber as the optical waveguide the nanoscale CdS/p-Si axial nanowire junctions were fabricated, and in situ photocurrents from them were successfully measured. Compared to a single constituting nanowire, the CdS/p-Si axial nanowire junctions possess a photocurrent saturation effect, which protects them from damage under high voltages. Furthermore, a set of experiments reveals the clear relationship between the saturation photocurrent values and the incident light intensities. The applied technique is expected to be valuable for bottom-up nanodevice fabrications, and the regarded photocurrent saturation feature may solve the Joule heating-induced failure problem in nanowire optoelectronic devices caused by a fluctuating bias.
authors: International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 3050044, Japan. Graduate School of Pure and Applied Sciences, Tennodai 1, University of Tsukuba, Tsukuba, Ibaraki 3058577, Japan.
authors: Chao
authors: C
authors: Zhang
authors: Zhi
authors: Z
authors: Xu
authors: Wei
authors: W
authors: Tian
authors: Dai-Ming
authors: DM
authors: Tang
authors: Xi
authors: X
authors: Wang
authors: Yoshio
authors: Y
authors: Bando
authors: Naoki
authors: N
authors: Fukata
authors: Dmitri
authors: D
authors: Golberg