title: In situ electrical characterization of tapered InAs nanowires in a transmission electron microscope with ohmic contacts.
abstract: The electrical properties of segments of tapered InAs nanowires (NWs) were investigated by in situ transmission electron microscopy with simultaneous I-V measurements using good ohmic contacts, thus excluding experimental artefacts as Joule heating caused by high-resistivity contacts. At low voltage the resistivity of InAs NWs with a diameter larger than 120 nm is constant (∼10(-2) Ω · cm). When the current is strongly increased a breakdown of the NW occurs close to the cathode side, whereby the main changes are an electromigration of In and a sublimation of As. The critical current density for breakdown was close to 10(6) A cm(-2) in most cases. A Joule heating and electromigration mechanism for the breakdown process is proposed.
authors: State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, People's Republic of China. Delft University of Technology, Kavli Institute of Nanoscience, 2628 CJ Delft, The Netherlands. School of Computer, National University of Defense Technology, Changsha 410073, People's Republic of China.
authors: Chao
authors: C
authors: Zhang
authors: Mariya
authors: M
authors: Neklyudova
authors: Liang
authors: L
authors: Fang
authors: Qiang
authors: Q
authors: Xu
authors: Hui
authors: H
authors: Wang
authors: Frans D
authors: FD
authors: Tichelaar
authors: Henny W
authors: HW
authors: Zandbergen