title: Light-emitting devices based on top-down fabricated GaAs quantum nanodisks.
abstract: Quantum dots photonic devices based on the III-V compound semiconductor technology offer low power consumption, temperature stability, and high-speed modulation. We fabricated GaAs nanodisks (NDs) of sub-20-nm diameters by a top-down process using a biotemplate and neutral beam etching (NBE). The GaAs NDs were embedded in an AlGaAs barrier regrown by metalorganic vapor phase epitaxy (MOVPE). The temperature dependence of photoluminescence emission energies and the transient behavior were strongly affected by the quantum confinement effects of the embedded NDs. Therefore, the quantum levels of the NDs may be tuned by controlling their dimensions. We combined NBE and MOVPE in a high-throughput process compatible with industrial production systems to produce GaAs NDs with tunable optical characteristics. ND light emitting diode exhibited a narrow spectral width of 38 nm of high-intensity emission as a result of small deviation of ND sizes and superior crystallographic quality of the etched GaAs/AlGaAs layer.
authors: World Premier International Center Initiative Advanced Institute for Materials Research, Tohoku University, 2-1-1 KatahiraAoba-ku, Sendai, Japan.
authors: Akio
authors: A
authors: Higo
authors: 1] Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo, Japan [2] CREST Japan Science and Technology Agency, 5 SanbanchoChiyoda-ku, Tokyo, Japan.
authors: Takayuki
authors: T
authors: Kiba
authors: 1] Institute of Fluid Science, Tohoku University, 2-1-1 KatahiraAoba-ku, Sendai, Japan [2] CREST Japan Science and Technology Agency, 5 SanbanchoChiyoda-ku, Tokyo, Japan.
authors: Yosuke
authors: Y
authors: Tamura
authors: 1] Institute of Fluid Science, Tohoku University, 2-1-1 KatahiraAoba-ku, Sendai, Japan [2] CREST Japan Science and Technology Agency, 5 SanbanchoChiyoda-ku, Tokyo, Japan.
authors: Cedric
authors: C
authors: Thomas
authors: Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo, Japan.
authors: Junichi
authors: J
authors: Takayama
authors: School of Engineering, The University of Tokyo, 7-3-1 HongoBunkyo-ku, Tokyo 113-8656, Japan.
authors: Yunpeng
authors: Y
authors: Wang
authors: School of Engineering, The University of Tokyo, 7-3-1 HongoBunkyo-ku, Tokyo 113-8656, Japan.
authors: Hassanet
authors: H
authors: Sodabanlu
authors: Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1, KomabaMeguro-ku, Tokyo, Japan.
authors: Masakazu
authors: M
authors: Sugiyama
authors: Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1, KomabaMeguro-ku, Tokyo, Japan.
authors: Yoshiaki
authors: Y
authors: Nakano
authors: 1] Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Japan [2] CREST Japan Science and Technology Agency, 5 SanbanchoChiyoda-ku, Tokyo, Japan.
authors: Ichiro
authors: I
authors: Yamashita
authors: 1] Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo, Japan [2] CREST Japan Science and Technology Agency, 5 SanbanchoChiyoda-ku, Tokyo, Japan.
authors: Akihiro
authors: A
authors: Murayama
authors: 1] World Premier International Center Initiative Advanced Institute for Materials Research, Tohoku University, 2-1-1 KatahiraAoba-ku, Sendai, Japan [2] Institute of Fluid Science, Tohoku University, 2-1-1 KatahiraAoba-ku, Sendai, Japan [3] CREST Japan Science and Technology Agency, 5 SanbanchoChiyoda-ku, Tokyo, Japan.
authors: Seiji
authors: S
authors: Samukawa