title: Bonding and electronic states of boron in silicon nanowires characterized by an infrared synchrotron radiation beam.
abstract: The infrared synchrotron radiation (IR-SR) beamline of SPring-8 as an IR light source was applied to characterize boron (B) atoms in silicon nanowires (SiNWs). The use of an IR-SR beam with much higher brilliance than conventional IR light sources and a wide range of wavenumbers from visible to far IR regions made it possible to detect a local vibrational mode of B in SiNWs. The use of this technique has also made it possible to detect other IR peaks related to transitions of a bound hole from the ground state of a B acceptor atom to excited states, clarifying the electronic state of B acceptors in SiNWs.
authors: International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan. Fukata.Naoki@nims.go.jp.
authors: N
authors: N
authors: Fukata
authors: W
authors: W
authors: Jevasuwan
authors: Y
authors: Y
authors: Ikemoto
authors: T
authors: T
authors: Moriwaki