title: An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions.
abstract: A multifunctional optoelectronic resistive switching memory, composed of a simple ITO/CeO2- x/AlOy/Al structure, is demonstrated. Arising from the photo-induced detrapping, electrode-injection and retrapping of electrons in the CeO2-x/AlOy/Al interfacial region, the device shows broadband, linear, and persistent photoresponses that can be used for the integration of demodulating, arithmetic, and memory functions in a single device for future optoelectronic interconnect systems.
authors: Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, PR China; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, PR China.
authors: Hongwei
authors: H
authors: Tan
authors: Gang
authors: G
authors: Liu
authors: Xiaojian
authors: X
authors: Zhu
authors: Huali
authors: H
authors: Yang
authors: Bin
authors: B
authors: Chen
authors: Xinxin
authors: X
authors: Chen
authors: Jie
authors: J
authors: Shang
authors: Wei D
authors: WD
authors: Lu
authors: Yihong
authors: Y
authors: Wu
authors: Run-Wei
authors: RW
authors: Li
keywords: adjustable photoconductivity; arithmetic; information demodulating; non-volatile memory; resistive switching