title: Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors.
abstract: Dense alignment of single-walled carbon nanotubes over a large area is demonstrated using a novel solution-shearing technique. A density of 150-200 single-walled carbon nanotubes per micro-meter is achieved with a current density of 10.08 μA μm(-1) at VDS = -1 V. The on-current density is improved by a factor of 45 over that of random-network single-walled carbon nanotubes.
authors: Department of Materials Science and Engineering, Stanford University, Durand Building, 496 Lomita Mall, Stanford, CA, 94305-4034, USA.
authors: Steve
authors: S
authors: Park
authors: Gregory
authors: G
authors: Pitner
authors: Gaurav
authors: G
authors: Giri
authors: Ja Hoon
authors: JH
authors: Koo
authors: Joonsuk
authors: J
authors: Park
authors: Kwanpyo
authors: K
authors: Kim
authors: Huiliang
authors: H
authors: Wang
authors: Robert
authors: R
authors: Sinclair
authors: H-S Philip
authors: HS
authors: Wong
authors: Zhenan
authors: Z
authors: Bao
keywords: alignment; assembly; carbon nanotubes; patterning; transistors