title: Atomic layer deposition of quaternary oxide (La,Sr)CoO3-δ thin films.
abstract: A novel atomic layer deposition (ALD) process was developed for fabricating quaternary cobalt oxide (La1-xSrx)CoO3-δ thin films having the eye on future applications of such films in e.g. solid oxide fuel cell cathodes, oxygen separation membranes or thermocouples. The deposition parameters and the conditions of a subsequent annealing step were systematically investigated, and using the thus optimized parameters the cation stoichiometry in the films could be accurately tuned. The most detailed study was conducted for x = 0.7, i.e. the composition with the highest application potential within the (La1-xSrx)CoO3-δ system.
authors.affiliation: Laboratory of Inorganic Chemistry, Department of Chemistry, Aalto University, P.O. Box 16100, FI-00076 AALTO, Espoo, Finland. maarit.karppinen@aalto.fi.
authors.forename: E
authors.initials: E
authors.lastname: Ahvenniemi
authors.forename: M
authors.initials: M
authors.lastname: Matvejeff
authors.forename: M
authors.initials: M
authors.lastname: Karppinen