title: High confinement, high yield Si(3)N(4) waveguides for nonlinear optical applications.
abstract: In this paper we present a novel fabrication technique for silicon nitride (Si(3)N(4)) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si(3)N(4). Using this technique no stress-induced cracks in the Si(3)N(4) layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.
authors.forename: Jörn P
authors.initials: JP
authors.lastname: Epping
authors.forename: Marcel
authors.initials: M
authors.lastname: Hoekman
authors.forename: Richard
authors.initials: R
authors.lastname: Mateman
authors.forename: Arne
authors.initials: A
authors.lastname: Leinse
authors.forename: René G
authors.initials: RG
authors.lastname: Heideman
authors.forename: Albert
authors.initials: A
authors.lastname: van Rees
authors.forename: Peter J M
authors.initials: PJ
authors.lastname: van der Slot
authors.forename: Chris J
authors.initials: CJ
authors.lastname: Lee
authors.forename: Klaus-J
authors.initials: KJ
authors.lastname: Boller