title: Multi-susceptibile single-phased ceramics with both considerable magnetic and dielectric properties by selectively doping.
abstract: Multiferroic ceramics with extraordinary susceptibilities coexisting are vitally important for the multi-functionality and integration of electronic devices. However, multiferroic composites, as the most potential candidates, will introduce inevitable interface deficiencies and thus dielectric loss from dissimilar phases. In this study, single-phased ferrite ceramics with considerable magnetic and dielectric performances appearing simultaneously were fabricated by doping target ions in higher valence than that of Fe(3+), such as Ti(4+), Nb(5+) and Zr(4+), into BaFe12O19. In terms of charge balance, Fe(3+)/Fe(2+) pair dipoles are produced through the substitution of Fe(3+) by high-valenced ions. The electron hopping between Fe(3+) and Fe(2+) ions results in colossal permittivity. Whilst the single-phased ceramics doped by target ions exhibit low dielectric loss naturally due to the diminishment of interfacial polarization and still maintain typical magnetic properties. This study provides a convenient method to attain practicable materials with both outstanding magnetic and dielectric properties, which may be of interest to integration and multi-functionality of electronic devices.
authors.affiliation: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P.R. China.
authors.forename: Chuyang
authors.initials: C
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P.R. China.
authors.forename: Yujing
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P.R. China.
authors.forename: Jingguo
authors.initials: J
authors.lastname: Jia
authors.affiliation: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P.R. China.
authors.forename: Qiang
authors.initials: Q
authors.lastname: Sui
authors.affiliation: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P.R. China.
authors.forename: Ning
authors.initials: N
authors.lastname: Ma
authors.affiliation: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P.R. China.
authors.forename: Piyi
authors.initials: P
authors.lastname: Du
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