title: Photovoltaic Conversion Enhancement of a Carbon Quantum Dots/p-Type CuAlO2/n-Type ZnO Photoelectric Device.
abstract: Carbon quantum dots (C QDs)/p-type CuAlO2/n-type ZnO photoelectric bilayer film composites were prepared by a simple route, through which ZnO films were sputtered on crystal quartz substrates and CuAlO2 films were prepared by sol-gel on ZnO films and then these bilayer films were composited with C QDs on their surface. The characterization results indicated that C QDs were well combined with the surface of the CuAlO2 films. The photovoltage and photocurrent of these bilayer film composites were investigated under illumination and darkness switching, which demonstrated to be significantly enhanced compared with those of the CuAlO2/ZnO bilayer films. Through analysis, this enhancement of the photoconductivity was mainly attributed to C QDs with unique up-converted photoluminescence behavior.
authors.forename: Jiaqi
authors.initials: J
authors.lastname: Pan
authors.forename: Yingzhuo
authors.initials: Y
authors.lastname: Sheng
authors.forename: Jingxiang
authors.initials: J
authors.lastname: Zhang
authors.forename: Peng
authors.initials: P
authors.lastname: Huang
authors.affiliation: §College of Science, Xi'An University of Science and Technology, Xi'An 710000, P. R. China.
authors.forename: Xin
authors.initials: X
authors.lastname: Zhang
authors.forename: Boxue
authors.initials: B
authors.lastname: Feng
keywords: carbon quantum dots; photoelectric; p−n junction; transmittance; up-converted photoluminescence