title: Heterogeneously integrated 2.0 μm CW hybrid silicon lasers at room temperature.
abstract: Here we experimentally demonstrate room temperature, continuous-wave (CW), 2.0 μm wavelength lasers heterogeneously integrated on silicon. Molecular wafer bonding of InP to Si is employed. These hybrid silicon lasers operate CW up to 35°C and emit up to 4.2 mW of single-facet CW power at room temperature. III-V tapers transfer light from a hybrid III-V/silicon optical mode into a Si waveguide mode. These lasers enable the realization of a number of sensing and detection applications in compact silicon photonic systems.
authors.forename: Alexander
authors.initials: A
authors.lastname: Spott
authors.forename: Michael
authors.initials: M
authors.lastname: Davenport
authors.forename: Jon
authors.initials: J
authors.lastname: Peters
authors.forename: Jock
authors.initials: J
authors.lastname: Bovington
authors.forename: Martijn J R
authors.initials: MJ
authors.lastname: Heck
authors.forename: Eric J
authors.initials: EJ
authors.lastname: Stanton
authors.forename: Igor
authors.initials: I
authors.lastname: Vurgaftman
authors.forename: Jerry
authors.initials: J
authors.lastname: Meyer
authors.forename: John
authors.initials: J
authors.lastname: Bowers