title: Carrier multiplication in silicon nanocrystals: ab initio results.
abstract: One of the most important goals in the field of renewable energy is the development of original solar cell schemes employing new materials to overcome the performance limitations of traditional solar cell devices. Among such innovative materials, nanostructures have emerged as an important class of materials that can be used to realize efficient photovoltaic devices. When these systems are implemented into solar cells, new effects can be exploited to maximize the harvest of solar radiation and to minimize the loss factors. In this context, carrier multiplication seems one promising way to minimize the effects induced by thermalization loss processes thereby significantly increasing the solar cell power conversion. In this work we analyze and quantify different types of carrier multiplication decay dynamics by analyzing systems of isolated and coupled silicon nanocrystals. The effects on carrier multiplication dynamics by energy and charge transfer processes are also discussed.
authors.affiliation: Department of Science and Methods for Engineering (DISMI), via Amendola 2, Pad. Morselli, 42122 Reggio Emilia, Italy.
authors.forename: Ivan
authors.initials: I
authors.lastname: Marri
authors.affiliation: Department of Physics, University of Modena and Reggio Emilia, via Campi 213/a, 41125 Modena, Italy ; present address: Institute for Molecular Engineering, The University of Chicago, 5555 South Ellis Avenue, Chicago, Illinois 60637, United States.
authors.forename: Marco
authors.initials: M
authors.lastname: Govoni
authors.affiliation: Department of Science and Methods for Engineering (DISMI), via Amendola 2, Pad. Morselli, 42122 Reggio Emilia, Italy.
authors.forename: Stefano
authors.initials: S
authors.lastname: Ossicini
keywords: carrier multiplication; nanocrystals; silicon; solar cells
references.citation: Nano Lett. 2010 Aug 11;10(8):3019-27
references.pmid: 20698615
references.citation: Nat Nanotechnol. 2010 Dec;5(12):878-84
references.pmid: 21113157
references.citation: J Nanosci Nanotechnol. 2008 Feb;8(2):479-92
references.pmid: 18464361
references.citation: Nano Lett. 2010 Jan;10(1):164-70
references.pmid: 19911830
references.citation: Nano Lett. 2006 Dec;6(12):2856-63
references.pmid: 17163719
references.citation: Phys Rev Lett. 2004 May 7;92(18):186601
references.pmid: 15169518
references.citation: J Phys Condens Matter. 2009 Sep 30;21(39):395502
references.pmid: 21832390
references.citation: Nat Nanotechnol. 2014 Jan;9(1):19-32
references.pmid: 24390564
references.citation: Nano Lett. 2007 Nov;7(11):3469-76
references.pmid: 17967043
references.citation: Nano Lett. 2006 Oct;6(10):2191-5
references.pmid: 17034081
references.citation: Nat Nanotechnol. 2011 Oct 09;6(11):710-3
references.pmid: 21984044
references.citation: Phys Rev B Condens Matter. 1991 Nov 15;44(19):10945-10948
references.pmid: 9999132
references.citation: Science. 2000 Oct 13;290(5490):314-7
references.pmid: 11030645
references.citation: Nano Lett. 2008 Dec;8(12):4488-92
references.pmid: 19367885
references.citation: Nano Lett. 2005 Dec;5(12):2360-4
references.pmid: 16351178
references.citation: Nano Lett. 2006 Mar;6(3):424-9
references.pmid: 16522035
references.citation: Nano Lett. 2007 Aug;7(8):2506-12
references.pmid: 17645368
references.citation: J Am Chem Soc. 2014 Sep 24;136(38):13257-66
references.pmid: 25092549
references.citation: J Phys Chem B. 2006 Dec 21;110(50):25332-8
references.pmid: 17165979
references.citation: Science. 2011 Dec 16;334(6062):1530-3
references.pmid: 22174246
references.citation: Nano Lett. 2008 Jun;8(6):1713-8
references.pmid: 18489170
references.citation: J Phys Chem Lett. 2011 Jun 2;2(11):1282-8
references.pmid: 26295422
references.citation: J Am Chem Soc. 2006 Mar 15;128(10):3241-7
references.pmid: 16522105
references.citation: Nano Lett. 2005 May;5(5):865-71
references.pmid: 15884885