title: Tensile-strained germanium microdisk electroluminescence.
abstract: We report room temperature electroluminescence of tensile-strained germanium microdisks. The strain is transferred into the microdisks using silicon nitride stressors. Carrier injection is achieved with Schottky contacts on n-type doped germanium. We show that a biaxial tensile-strain up to 0.72% can be transferred by optimizing the carrier injection profile. The transferred strain is measured by the electroluminescence spectral red-shift and compared to finite element modeling. We discuss the impact of this strain level to achieve population inversion in germanium.
authors.forename: M
authors.initials: M
authors.lastname: Prost
authors.forename: M
authors.initials: M
authors.lastname: El Kurdi
authors.forename: A
authors.initials: A
authors.lastname: Ghrib
authors.forename: S
authors.initials: S
authors.lastname: Sauvage
authors.forename: X
authors.initials: X
authors.lastname: Checoury
authors.forename: N
authors.initials: N
authors.lastname: Zerounian
authors.forename: F
authors.initials: F
authors.lastname: Aniel
authors.forename: G
authors.initials: G
authors.lastname: Beaudoin
authors.forename: I
authors.initials: I
authors.lastname: Sagnes
authors.forename: F
authors.initials: F
authors.lastname: Boeuf
authors.forename: P
authors.initials: P
authors.lastname: Boucaud