title: Note: self-biased magnetic field sensor using end-bonding magnetoelectric heterostructure.
abstract: A high sensitivity magnetic field sensor based on magnetoelectric (ME) coupling is presented. The ME sensor FeCuNbSiB/Nickel-PZT-FeCuNbSiB/Nickel is made by bonding magnetization-graded magnetostrictive materials FeCuNbSiB/Nickel at the free ends of the piezoelectric Pb(Zr1-x,Tix)O3 (PZT) plate. Experiments indicate that the proposed sensor has a zero-bias field sensitivity of 14.7 V/Oe at resonance, which is ∼41.6 times larger than that of previous FeCuNbSiB-PZT-FeCuNbSiB. Furthermore, without external biased field, it can detect dc magnetic field changes as small as ∼9 nT near the resonant frequency. This proposed ME sensor provides new pathways to reducing or even eliminating the need of bias fields for ME sensors.
authors.affiliation: School of Computer Science and Control Engineering, North University of China, Taiyuan 030051, China.
authors.forename: Yaoxia
authors.initials: Y
authors.lastname: Zhao
authors.affiliation: Guizhou Electric Power Test and Research Institute, China Southern Power Grid, Guiyang 550002, China.
authors.forename: Caijiang
authors.initials: C
authors.lastname: Lu