title: Narrow-linewidth short-pulse III-V-on-silicon mode-locked lasers based on a linear and ring cavity geometry.
abstract: Picosecond-pulse III-V-on-silicon mode-locked lasers based on linear and ring extended cavity geometries are presented. In passive mode-locked operation a 12 kHz -3dB linewidth of the fundamental RF tone at 4.7 GHz is obtained for the linear cavity geometry and 16 kHz for the ring cavity geometry. Stabilization of the repetition rate of these devices using hybrid mode-locking is also demonstrated.
authors.forename: S
authors.initials: S
authors.lastname: Keyvaninia
authors.forename: S
authors.initials: S
authors.lastname: Uvin
authors.forename: M
authors.initials: M
authors.lastname: Tassaert
authors.forename: X
authors.initials: X
authors.lastname: Fu
authors.forename: S
authors.initials: S
authors.lastname: Latkowski
authors.forename: J
authors.initials: J
authors.lastname: Mariën
authors.forename: L
authors.initials: L
authors.lastname: Thomassen
authors.forename: F
authors.initials: F
authors.lastname: Lelarge
authors.forename: G
authors.initials: G
authors.lastname: Duan
authors.forename: P
authors.initials: P
authors.lastname: Verheyen
authors.forename: G
authors.initials: G
authors.lastname: Lepage
authors.forename: J
authors.initials: J
authors.lastname: Van Campenhout
authors.forename: E
authors.initials: E
authors.lastname: Bente
authors.forename: G
authors.initials: G
authors.lastname: Roelkens