title: Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing.
abstract: We report on a unique area-selective, post-growth approach in engineering the quantum-confined potential-energy profile of InGaN/GaN quantum wells (QWs) utilizing metal/dielectric-coating induced intermixing process. This led to simultaneous realization of adjacent regions with peak emission of 2.74 eV and 2.82 eV with a high spatial resolution (~1 μm) at the coating boundary. The potential profile softening in the intermixed QW light-emitting diode (LED) was experimentally and numerically correlated, shedding light on the origin of alleviated efficiency droop from 30.5% to 16.6% (at 150 A/cm²). The technique is advantageous for fabricating high efficiency light-emitters, and is amenable to monolithic integration of nitride-based photonic devices.
authors.forename: Chao
authors.initials: C
authors.lastname: Shen
authors.forename: Tien Khee
authors.initials: TK
authors.lastname: Ng
authors.forename: Boon S
authors.initials: BS
authors.lastname: Ooi