title: Boosting light emission from Si-based thin film over Si and SiO(2) nanowires architecture.
abstract: Silicon (Si)-based light emitting thin film has been a key ingredient for all-Si-based optoelectronics. Besides material engineering, adopting a novel 3D photonic architecture represents an effective strategy to boost light excitation and extraction from Si-based thin film material. We here explore the use of a nanowires (NW) framework, grown via vapor-liquid-solid mode, to achieve strongly enhanced yellow-green luminescence from SiN(x)O(y)/NW core-shell structure, with an order of magnitude enhancement compared to co-deposited planar references. We found that choosing geometrically-identical but different NW cores (Si or SiO(2)) can lead to profound influence on the overall light emission performance. Combining parametric investigation and theoretical modeling, we have been able to evaluate the key contributions arising from different mechanisms that include near-field enhancement, 3D light trapping and enhanced light extraction. These new findings indicate a new and effective strategy for strong Si-based thin film light emitting source, while being generic enough to be applicable in a wide variety of other thin film materials.
authors.forename: Zhongwei
authors.initials: Z
authors.lastname: Yu
authors.forename: Shengyi
authors.initials: S
authors.lastname: Qian
authors.forename: Linwei
authors.initials: L
authors.lastname: Yu
authors.forename: Soumyadeep
authors.initials: S
authors.lastname: Misra
authors.forename: Pei
authors.initials: P
authors.lastname: Zhang
authors.forename: Junzhuan
authors.initials: J
authors.lastname: Wang
authors.forename: Yi
authors.initials: Y
authors.lastname: Shi
authors.forename: Ling
authors.initials: L
authors.lastname: Xu
authors.forename: Jun
authors.initials: J
authors.lastname: Xu
authors.forename: Kunji
authors.initials: K
authors.lastname: Chen
authors.forename: Pere
authors.initials: P
authors.lastname: Roca i Cabarrocas