title: Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping.
abstract: We report an analysis method that combines microphotoluminescence mapping and lifetime mapping data of single semiconductor nanowires to extract the doping concentration, nonradiative lifetime, and internal quantum efficiency along the length of the nanowires. Using this method, the doping concentration of single Si-doped wurtzite InP nanowires are mapped out and confirmed by the electrical measurements of single nanowire devices. Our method has important implication for single nanowire detectors and LEDs and nanowire solar cells applications.
authors.forename: Fan
authors.initials: F
authors.lastname: Wang
authors.forename: Qian
authors.initials: Q
authors.lastname: Gao
authors.forename: Kun
authors.initials: K
authors.lastname: Peng
authors.forename: Zhe
authors.initials: Z
authors.lastname: Li
authors.forename: Ziyuan
authors.initials: Z
authors.lastname: Li
authors.forename: Yanan
authors.initials: Y
authors.lastname: Guo
authors.forename: Lan
authors.initials: L
authors.lastname: Fu
authors.affiliation: §Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221-0011, United States.
authors.forename: Leigh Morris
authors.initials: LM
authors.lastname: Smith
authors.forename: Hark Hoe
authors.initials: HH
authors.lastname: Tan
authors.forename: Chennupati
authors.initials: C
authors.lastname: Jagadish
keywords: Semiconductor nanowires; doping; internal quantum efficiency; nonradiative lifetime; photoluminescence