title: Crystallization dynamics and interface stability of strontium titanate thin films on silicon.
abstract: Different physical vapor deposition methods have been used to fabricate strontium titanate thin films. Within the binary phase diagram of SrO and TiO2the stoichiometry ranges from Ti rich to Sr rich, respectively. The crystallization of these amorphous SrTiO3layers is investigated byin situgrazing-incidence X-ray diffraction using synchrotron radiation. The crystallization dynamics and evolution of the lattice constants as well as crystallite sizes of the SrTiO3layers were determined for temperatures up to 1223 K under atmospheric conditions applying different heating rates. At approximately 473 K, crystallization of perovskite-type SrTiO3is initiated for Sr-rich electron beam evaporated layers, whereas Sr-depleted sputter-deposited thin films crystallize at 739 K. During annealing, a significant diffusion of Si from the substrate into the SrTiO3layers occurs in the case of Sr-rich composition. This leads to the formation of secondary silicate phases which are observed by X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy.
authors.affiliation: Institute of Experimental Physics, TU Bergakademie Freiberg, Leipziger Strasse 23, 09596 Freiberg, Germany.
authors.forename: Florian
authors.initials: F
authors.lastname: Hanzig
authors.affiliation: Institute of Experimental Physics, TU Bergakademie Freiberg, Leipziger Strasse 23, 09596 Freiberg, Germany.
authors.forename: Juliane
authors.initials: J
authors.lastname: Hanzig
authors.affiliation: Institute of Experimental Physics, TU Bergakademie Freiberg, Leipziger Strasse 23, 09596 Freiberg, Germany.
authors.forename: Erik
authors.initials: E
authors.lastname: Mehner
authors.affiliation: Institute of Experimental Physics, TU Bergakademie Freiberg, Leipziger Strasse 23, 09596 Freiberg, Germany ; Hamburger Synchrotronstrahlungslabor at Deutsches Elektronen-Synchrotron, Notke-strasse 85, 22607 Hamburg, Germany.
authors.forename: Carsten
authors.initials: C
authors.lastname: Richter
authors.affiliation: Institute of Materials Science, TU Bergakademie Freiberg, Gustav-Zeuner-Strasse 5, 09596 Freiberg, Germany ; Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague, Czech Republic.
authors.forename: Jozef
authors.initials: J
authors.lastname: Veselý
authors.affiliation: Institute of Experimental Physics, TU Bergakademie Freiberg, Leipziger Strasse 23, 09596 Freiberg, Germany.
authors.forename: Hartmut
authors.initials: H
authors.lastname: Stöcker
authors.affiliation: Institute of Experimental Physics, TU Bergakademie Freiberg, Leipziger Strasse 23, 09596 Freiberg, Germany.
authors.forename: Barbara
authors.initials: B
authors.lastname: Abendroth
authors.affiliation: Institute of Materials Science, TU Bergakademie Freiberg, Gustav-Zeuner-Strasse 5, 09596 Freiberg, Germany.
authors.forename: Mykhaylo
authors.initials: M
authors.lastname: Motylenko
authors.affiliation: Institute of Materials Science, TU Bergakademie Freiberg, Gustav-Zeuner-Strasse 5, 09596 Freiberg, Germany.
authors.forename: Volker
authors.initials: V
authors.lastname: Klemm
authors.affiliation: Hamburger Synchrotronstrahlungslabor at Deutsches Elektronen-Synchrotron, Notke-strasse 85, 22607 Hamburg, Germany.
authors.forename: Dmitri
authors.initials: D
authors.lastname: Novikov
authors.affiliation: Institute of Experimental Physics, TU Bergakademie Freiberg, Leipziger Strasse 23, 09596 Freiberg, Germany.
authors.forename: Dirk C
authors.initials: DC
authors.lastname: Meyer
keywords: crystallization dynamics; interface stability; silicon substrates; strontium titanate; thin films
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