title: Osteoblastic cells trigger gate currents on nanocrystalline diamond transistor.
abstract: We show the influence of osteoblastic SAOS-2 cells on the transfer characteristics of nanocrystalline diamond solution-gated field-effect transistors (SGFET) prepared on glass substrates. Channels of these fully transparent SGFETs are realized by hydrogen termination of undoped diamond film. After cell cultivation, the transistors exhibit about 100× increased leakage currents (up to 10nA). During and after the cell delamination, the transistors return to original gate currents. We propose a mechanism where this triggering effect is attributed to ions released from adhered cells, which depends on the cell adhesion morphology, and could be used for cell culture monitoring.
authors.affiliation: Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic. Electronic address: izak@fzu.cz.
authors.forename: Tibor
authors.initials: T
authors.lastname: Izak
authors.affiliation: Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic.
authors.forename: Marie
authors.initials: M
authors.lastname: Krátká
authors.affiliation: Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic.
authors.forename: Alexander
authors.initials: A
authors.lastname: Kromka
authors.affiliation: Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic.
authors.forename: Bohuslav
authors.initials: B
authors.lastname: Rezek
mesh_terms: D000200:Action Potentials; D015374:Biosensing Techniques / Q000295:instrumentation*; D001859:Bone Neoplasms; D002448:Cell Adhesion; D018130:Diamond / Q000737:chemistry*; D006801:Humans; D007477:Ions; D012516:Osteosarcoma; D014173:Transistors, Electronic; D014407:Tumor Cells, Cultured
chemical_list: D007477:Ions; D018130:Diamond
keywords: Field-effect transistors; Leakage currents; Nanocrystalline diamond; Osteoblastic cells