title: High-efficiency BAlGaN/AlN quantum well structures for optoelectronic applications in ultraviolet spectral region.
abstract: Light emission characteristics of ultraviolet (UV) B(x)Al(y)Ga(1-x-y)N/AlN quantum well (QW) structures were using the multiband effective-mass theory. The TE-polarized spontaneous emission is found to be significantly improved owing to the decrease in the lattice-mismatch between the well and the substrate with the inclusion of boron. However, the spontaneous emission peak begins to decrease when the boron composition exceeds a critical value (x = 0.08 for y = 0.2), which is mainly due to an increase in the heavy-hole effective mass. In addition, in the case of QW structures with higher Al composition (y > 0.5), the light emission is shown to decrease with increasing the boron composition because the characteristic of the topmost valence subband is changed to the crystal-field splitoff hole band. Hence, we expect that B(x)Al(y)Ga(1-x-y)N/AlN QW structures with y < 0.5 can be used as a TE-polarized light source with a high efficiency.
authors.forename: Seoung-Hwan
authors.initials: SH
authors.lastname: Park