title: Temperature sensor based on a hybrid ITO-silica resonant cavity.
abstract: Integrated optical devices comprised of multiple material systems are able to achieve unique performance characteristics, enabling applications in sensing and in telecommunications. Due to ease of fabrication, the majority of previous work has focused on polymer-dielectric or polymer-semiconductor systems. However, the environmental stability of polymers is limited. In the present work, a hybrid device comprised of an indium tin oxide (ITO) coating on a silicon dioxide toroidal resonant cavity is fabricated. Finite element method simulations of the optical field in the multi-material device are performed, and the optical mode profile is significantly altered by the high index film. The quality factor is also measured and is material loss limited. Additionally, its performance as a temperature sensor is characterized. Due to the high thermo-optic coefficient of ITO and the localization of the optical field in the ITO layer, the hybrid temperature sensor demonstrates a nearly 3-fold improvement in performance over the conventional silica device.
authors.forename: Abian B
authors.initials: AB
authors.lastname: Socorro
authors.forename: Soheil
authors.initials: S
authors.lastname: Soltani
authors.forename: Ignacio
authors.initials: I
authors.lastname: Del Villar
authors.forename: Jesus M
authors.initials: JM
authors.lastname: Corres
authors.forename: Andrea M
authors.initials: AM
authors.lastname: Armani
mesh_terms: D020342:Finite Element Analysis; D008962:Models, Theoretical; D055096:Optical Devices / Q000706:statistics & numerical data; D012822:Silicon Dioxide; D013696:Temperature; D013821:Thermometers / Q000706:statistics & numerical data; D017971:Tin Compounds
chemical_list: D017971:Tin Compounds; C109984:indium tin oxide; D012822:Silicon Dioxide
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