title: Post-treatment-Free Solution-Processed Non-stoichiometric NiO(x) Nanoparticles for Efficient Hole-Transport Layers of Organic Optoelectronic Devices.
authors.affiliation: Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, PR China.
authors.forename: Fei
authors.initials: F
authors.lastname: Jiang
authors.forename: Wallace C H
authors.initials: WC
authors.lastname: Choy
authors.forename: Xinchen
authors.initials: X
authors.lastname: Li
authors.forename: Di
authors.initials: D
authors.lastname: Zhang
authors.forename: Jiaqi
authors.initials: J
authors.lastname: Cheng
keywords: hole-transport layers; nickel oxide; organic optoelectronic devices; post-treatment-free; transition metal oxides