title: Heterogeneously integrated photonic-crystal lasers on silicon for on/off chip optical interconnects.
abstract: We demonstrate the continuous-wave operation of lambda-scale embedded active-region photonic-crystal (LEAP) lasers at room temperature, which we fabricated on a Si wafer. The on-Si LEAP lasers exhibit a threshold current of 31 μA, which is the lowest reported value for any type of semiconductor laser on Si. This reveals the great potential of LEAP lasers as light sources for on- or off-chip optical interconnects with ultra-low power consumption in future information communication technology devices including CMOS processors.
authors.forename: Koji
authors.initials: K
authors.lastname: Takeda
authors.forename: Tomonari
authors.initials: T
authors.lastname: Sato
authors.forename: Takuro
authors.initials: T
authors.lastname: Fujii
authors.forename: Eiichi
authors.initials: E
authors.lastname: Kuramochi
authors.forename: Masaya
authors.initials: M
authors.lastname: Notomi
authors.forename: Koichi
authors.initials: K
authors.lastname: Hasebe
authors.forename: Takaaki
authors.initials: T
authors.lastname: Kakitsuka
authors.forename: Shinji
authors.initials: S
authors.lastname: Matsuo