title: Quantum dot SOA/silicon external cavity multi-wavelength laser.
abstract: We report a hybrid integrated external cavity, multi-wavelength laser for high-capacity data transmission operating near 1310 nm. This is the first demonstration of a single cavity multi-wavelength laser in silicon to our knowledge. The device consists of a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip with a Sagnac loop mirror and microring wavelength filter. We show four major lasing peaks from a single cavity with less than 3 dB power non-uniformity and demonstrate error-free 4 × 10 Gb/s data transmission.
authors.forename: Yi
authors.initials: Y
authors.lastname: Zhang
authors.forename: Shuyu
authors.initials: S
authors.lastname: Yang
authors.forename: Xiaoliang
authors.initials: X
authors.lastname: Zhu
authors.forename: Qi
authors.initials: Q
authors.lastname: Li
authors.forename: Hang
authors.initials: H
authors.lastname: Guan
authors.forename: Peter
authors.initials: P
authors.lastname: Magill
authors.forename: Keren
authors.initials: K
authors.lastname: Bergman
authors.forename: Thomas
authors.initials: T
authors.lastname: Baehr-Jones
authors.forename: Michael
authors.initials: M
authors.lastname: Hochberg