title: The nanostructuring of surfaces and films using interference lithography and chalcogenide photoresist.
abstract: The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films. It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants. The diffraction gratings and 2-D interference structures on germanium ChGs - more environmentally acceptable compounds than traditionally used arsenic chalcogenides - were recorded, and their characteristics were studied.
authors: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukrain, 45, Prospect Nauky, 03028 Kyiv, Ukraine.
authors: Viktor
authors: V
authors: Dan'ko
authors: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukrain, 45, Prospect Nauky, 03028 Kyiv, Ukraine.
authors: Ivan
authors: I
authors: Indutnyi
authors: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukrain, 45, Prospect Nauky, 03028 Kyiv, Ukraine.
authors: Victor
authors: V
authors: Myn'ko
authors: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukrain, 45, Prospect Nauky, 03028 Kyiv, Ukraine.
authors: Mariia
authors: M
authors: Lukaniuk
authors: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukrain, 45, Prospect Nauky, 03028 Kyiv, Ukraine.
authors: Petro
authors: P
authors: Shepeliavyi
keywords: 42.70.Ln; 81.16.Rf