title: A transfer hamiltonian model for devices based on quantum dot arrays.
abstract: We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of noncoherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes is introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents, and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime. While the description of the theoretical framework is kept as general as possible, two specific prototypical devices, an arbitrary array of quantum dots embedded in a matrix insulator and a transistor device based on quantum dots, are used to illustrate the kind of unique insight that numerical simulations based on the theory are able to provide.
authors: MIND/INUB Departament d'Electrònica, Universitat de Barcelona, C/Martí i Franquès 1, 08028 Barcelona, Spain.
authors: S
authors: S
authors: Illera
authors: MIND/INUB Departament d'Electrònica, Universitat de Barcelona, C/Martí i Franquès 1, 08028 Barcelona, Spain.
authors: J D
authors: JD
authors: Prades
authors: MIND/INUB Departament d'Electrònica, Universitat de Barcelona, C/Martí i Franquès 1, 08028 Barcelona, Spain.
authors: A
authors: A
authors: Cirera
authors: MIND/INUB Departament d'Electrònica, Universitat de Barcelona, C/Martí i Franquès 1, 08028 Barcelona, Spain.
authors: A
authors: A
authors: Cornet