title: Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition.
abstract: Undoped and Al-doped ZnO films were synthesized by atomic layer deposition at 150°C and then annealed at 350°C in different atmospheres. Effects of doping and annealing on the film growth mode and properties were investigated. The undoped film has strong UV emission and weak Zn interstitial emission. Annealing introduces O vacancies, decreases Zn interstitials, and results in weakening and blue-shifting of the UV emission which is sensitive to annealing atmosphere. Al doping induces the film growing with its c-axis parallel to the substrate surface. It also introduces non-radiative centers and weakens the UV emission. Al doping widens the film bandgap, which has a quadratic dependence on Al content. Al doping decreases the film resistivity to 5.3 × 10(-3) Ω · cm. Annealing has little effect on photoluminescence of the doped films, but it degrades undoped and doped ZnO film conductivity dramatically; and the degradation depends on the annealing ambient.
authors: Department of Physics, Beijing Normal University, Beijing, 100875 China.
authors: Aiji
authors: A
authors: Wang
authors: Department of Physics, Beijing Normal University, Beijing, 100875 China.
authors: Tingfang
authors: T
authors: Chen
authors: Department of Physics, Beijing Normal University, Beijing, 100875 China ; School of Police Information Engineering, People's Public Security University of China, Beijing, 100038 China.
authors: Shuhua
authors: S
authors: Lu
authors: Analytical and Testing Center, Beijing Normal University, Beijing, 100875 China.
authors: Zhenglong
authors: Z
authors: Wu
authors: Analytical and Testing Center, Beijing Normal University, Beijing, 100875 China.
authors: Yongliang
authors: Y
authors: Li
authors: Department of Physics, Beijing Normal University, Beijing, 100875 China.
authors: He
authors: H
authors: Chen
authors: Department of Physics, Beijing Normal University, Beijing, 100875 China.
authors: Yinshu
authors: Y
authors: Wang
keywords: ALD; Al doping; Annealing atmospheres; Electrical properties; Optical properties; ZnO films