title: Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures.
abstract: In-plane and vertically stacked heterostructures of graphene and hexagonal boron nitride (h-BN-G and G/h-BN, respectively) are both recent focuses of graphene research. However, targeted synthesis of either heterostructure remains a challenge. Here, via chemical vapour deposition and using benzoic acid precursor, we have achieved the selective growth of h-BN-G and G/h-BN through a temperature-triggered switching reaction. The perfect in-plane h-BN-G is characterized by scanning tunnelling microscopy (STM), showing atomically patched graphene and h-BN with typical zigzag edges. In contrast, the vertical alignment of G/h-BN is confirmed by unique lattice-mismatch-induced moiré patterns in high-resolution STM images, and two sets of aligned selected area electron diffraction spots, both suggesting a van der Waals epitaxial mechanism. The present work demonstrates the chemical designability of growth process for controlled synthesis of graphene and h-BN heterostructures. With practical scalability, high uniformity and quality, our approach will promote the development of graphene-based electronics and optoelectronics.
authors: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low-Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
authors: Teng
authors: T
authors: Gao
authors: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low-Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
authors: Xiuju
authors: X
authors: Song
authors: National Center for Nanoscience and Technology, Beijing 100190, China.
authors: Huiwen
authors: H
authors: Du
authors: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low-Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
authors: Yufeng
authors: Y
authors: Nie
authors: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low-Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
authors: Yubin
authors: Y
authors: Chen
authors: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low-Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
authors: Qingqing
authors: Q
authors: Ji
authors: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low-Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
authors: Jingyu
authors: J
authors: Sun
authors: National Center for Nanoscience and Technology, Beijing 100190, China.
authors: Yanlian
authors: 0000000343187672
authors: Y
authors: Yang
authors: 1] Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low-Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China [2] Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China.
authors: Yanfeng
authors: Y
authors: Zhang
authors: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low-Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
authors: Zhongfan
authors: Z
authors: Liu