title: High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition.
abstract: Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.
authors: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.
authors: Zhe
authors: Z
authors: Chen
authors: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.
authors: Feifei
authors: F
authors: Zhang
authors: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.
authors: Bing
authors: B
authors: Chen
authors: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.
authors: Yang
authors: Y
authors: Zheng
authors: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.
authors: Bin
authors: B
authors: Gao
authors: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.
authors: Lifeng
authors: L
authors: Liu
authors: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.
authors: Xiaoyan
authors: X
authors: Liu
authors: Institute of Microelectronics, Peking University, #5 Yiheyuan Road, Beijing, 100871 China.
authors: Jinfeng
authors: J
authors: Kang
keywords: Atomic layer deposition (ALD); Cross-point array; RRAM