title: Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X-ray Diffraction Microscopy.
abstract: Advanced semiconductor heterostructures are at the very heart of many modern technologies, including aggressively scaled complementary metal oxide semiconductor transistors for high performance computing and laser diodes for low power solid state lighting applications. The control of structural and compositional homogeneity of these semiconductor heterostructures is the key to success to further develop these state-of-the-art technologies. In this article, we report on the lateral distribution of tilt, composition, and strain across step-graded SiGe strain relaxed buffer layers on 300 mm Si(001) wafers treated with and without chemical-mechanical polishing. By using the advanced synchrotron based scanning X-ray diffraction microscopy technique K-Map together with micro-Raman spectroscopy and Atomic Force Microscopy, we are able to establish a partial correlation between real space morphology and structural properties of the sample resolved at the micrometer scale. In particular, we demonstrate that the lattice plane bending of the commonly observed cross-hatch pattern is caused by dislocations. Our results show a strong local correlation between the strain field and composition distribution, indicating that the adatom surface diffusion during growth is driven by strain field fluctuations induced by the underlying dislocation network. Finally, it is revealed that a superficial chemical-mechanical polishing of cross-hatched surfaces does not lead to any significant change of tilt, composition, and strain variation compared to that of as-grown samples.
authors: †IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
authors: Marvin H
authors: MH
authors: Zoellner
authors: ‡European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex, France.|§Aix-Marseille Université, CNRS, IM2NP UMR 7334, 13397 Marseille Cedex 20, France.
authors: Marie-Ingrid
authors: MI
authors: Richard
authors: ‡European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex, France.
authors: Gilbert A
authors: GA
authors: Chahine
authors: †IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
authors: Peter
authors: P
authors: Zaumseil
authors: †IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
authors: Christian
authors: C
authors: Reich
authors: †IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
authors: Giovanni
authors: G
authors: Capellini
authors: ∥Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, Via R. Cozzi 55, 20126 Milano, Italy.
authors: Francesco
authors: F
authors: Montalenti
authors: ∥Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, Via R. Cozzi 55, 20126 Milano, Italy.
authors: Anna
authors: A
authors: Marzegalli
authors: ⊥Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, California 90095-1595, United States.
authors: Ya-Hong
authors: YH
authors: Xie
authors: ‡European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex, France.
authors: Tobias U
authors: TU
authors: Schülli
authors: #Siltronic AG, Hans-Seidel-Platz 4, 81737 München, Germany.
authors: Maik
authors: M
authors: Häberlen
authors: #Siltronic AG, Hans-Seidel-Platz 4, 81737 München, Germany.
authors: Peter
authors: P
authors: Storck
authors: †IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.|▽Institute for Physics and Chemistry, Brandenburgische Technische Universität Cottbus, Konrad-Zuse-Strasse 1, 03046 Cottbus, Germany.
authors: Thomas
authors: T
authors: Schroeder
keywords: CMOS; chemical−mechanical polishing; scanning X-ray diffraction microscopy; strain relaxed SiGe buffer; structure inhomogeneities