title: Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2.
abstract: Continued progress in high-speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two-terminal device with internal resistance that depends on the history of the external bias voltage. State-of-the-art memristors, based on metal-insulator-metal (MIM) structures with insulating oxides, such as TiO₂, are limited by a lack of control over the filament formation and external control of the switching voltage. Here, we report a class of memristors based on grain boundaries (GBs) in single-layer MoS₂ devices. Specifically, the resistance of GBs emerging from contacts can be easily and repeatedly modulated, with switching ratios up to ∼10(3) and a dynamic negative differential resistance (NDR). Furthermore, the atomically thin nature of MoS₂ enables tuning of the set voltage by a third gate terminal in a field-effect geometry, which provides new functionality that is not observed in other known memristive devices.
authors: Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA.
authors: Vinod K
authors: 0000000256235285
authors: VK
authors: Sangwan
authors: Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA.
authors: Deep
authors: D
authors: Jariwala
authors: Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA.
authors: In Soo
authors: IS
authors: Kim
authors: Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA.
authors: Kan-Sheng
authors: KS
authors: Chen
authors: 1] Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA [2] Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA.
authors: Tobin J
authors: TJ
authors: Marks
authors: Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA.
authors: Lincoln J
authors: LJ
authors: Lauhon
authors: 1] Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA [2] Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA.
authors: Mark C
authors: MC
authors: Hersam