title: Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere.
abstract: Ultrathin black phosphorus is a two-dimensional semiconductor with a sizeable band gap. Its excellent electronic properties make it attractive for applications in transistor, logic and optoelectronic devices. However, it is also the first widely investigated two-dimensional material to undergo degradation upon exposure to ambient air. Therefore a passivation method is required to study the intrinsic material properties, understand how oxidation affects the physical properties and enable applications of phosphorene. Here we demonstrate that atomically thin graphene and hexagonal boron nitride can be used for passivation of ultrathin black phosphorus. We report that few-layer pristine black phosphorus channels passivated in an inert gas environment, without any prior exposure to air, exhibit greatly improved n-type charge transport resulting in symmetric electron and hole transconductance characteristics.
authors: 1] Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117546 Singapore, Singapore [2] Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore, Singapore [3] Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore, 28 Medical Drive, 117456 Singapore, Singapore.
authors: Rostislav A
authors: RA
authors: Doganov
authors: 1] Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117546 Singapore, Singapore [2] Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore, Singapore.
authors: Eoin C T
authors: EC
authors: O'Farrell
authors: 1] Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117546 Singapore, Singapore [2] Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore, Singapore.
authors: Steven P
authors: SP
authors: Koenig
authors: 1] Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117546 Singapore, Singapore [2] Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore, Singapore.
authors: Yuting
authors: Y
authors: Yeo
authors: Department of Chemistry, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA.
authors: Angelo
authors: A
authors: Ziletti
authors: Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117546 Singapore, Singapore.
authors: Alexandra
authors: A
authors: Carvalho
authors: Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA.
authors: David K
authors: DK
authors: Campbell
authors: Department of Chemistry, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA.
authors: David F
authors: DF
authors: Coker
authors: National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
authors: Kenji
authors: 0000000337018119
authors: K
authors: Watanabe
authors: National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
authors: Takashi
authors: T
authors: Taniguchi
authors: 1] Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117546 Singapore, Singapore [2] Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore, Singapore [3] Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore, 28 Medical Drive, 117456 Singapore, Singapore.
authors: Antonio H
authors: AH
authors: Castro Neto
authors: 1] Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117546 Singapore, Singapore [2] Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore, Singapore [3] Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore, 28 Medical Drive, 117456 Singapore, Singapore.
authors: Barbaros
authors: B
authors: Özyilmaz