title: Influence of post-annealing on the off current of MoS2 field-effect transistors.
abstract: Two-dimensional materials have recently been spotlighted, due to their unique properties in comparison with conventional bulk and thin-film materials. Among those materials, MoS2 is one of the promising candidates for the active layer of electronic devices because it shows high electron mobility and pristine band gap. In this paper, we focus on the evolution of the electrical property of the MoS2 field-effect transistor (FET) as a function of post-annealing temperature. The results indicate that the off current drastically decreased at 200°C and increased at 400°C while other factors, such as the mobility and threshold voltage, show little variation. We consider that the decreasing off current comes from the rearrangement of the MoS2 film and the elimination of the surface residue. Then, the increasing off current was caused by the change of the material's composition and adsorption of H2O and O2.
authors: School of Integrated Technology, Yonsei University, Songdo-dong, Incheon, 406-840 Republic of Korea ; Yonsei Institute of Convergence Technology, Incheon, 406-840 Republic of Korea.
authors: Seok Daniel
authors: SD
authors: Namgung
authors: School of Integrated Technology, Yonsei University, Songdo-dong, Incheon, 406-840 Republic of Korea ; Yonsei Institute of Convergence Technology, Incheon, 406-840 Republic of Korea.
authors: Suk
authors: S
authors: Yang
authors: Yonsei Institute of Convergence Technology, Incheon, 406-840 Republic of Korea.
authors: Kyung
authors: K
authors: Park
authors: School of Integrated Technology, Yonsei University, Songdo-dong, Incheon, 406-840 Republic of Korea ; Yonsei Institute of Convergence Technology, Incheon, 406-840 Republic of Korea.
authors: Ah-Jin
authors: AJ
authors: Cho
authors: School of Integrated Technology, Yonsei University, Songdo-dong, Incheon, 406-840 Republic of Korea ; Yonsei Institute of Convergence Technology, Incheon, 406-840 Republic of Korea.
authors: Hojoong
authors: H
authors: Kim
authors: School of Integrated Technology, Yonsei University, Songdo-dong, Incheon, 406-840 Republic of Korea ; Yonsei Institute of Convergence Technology, Incheon, 406-840 Republic of Korea.
authors: Jang-Yeon
authors: JY
authors: Kwon
keywords: Field-effect mobility; Field-effect transistors; MoS2; Molybdenum disulfide; On/off current ratio