title: Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs.
abstract: The combination of h-BN and high-k dielectrics is required for a top gate insulator in miniaturized graphene field-effect transistors because of the low dielectric constant of h-BN. We investigated the deposition of Y(2)O(3) on h-BN using atomic layer deposition. The deposition of Y(2)O(3) on h-BN was confirmed without any buffer layer. An increase in the deposition temperature reduced the surface coverage. The deposition mechanism could be explained by the competition between the desorption and adsorption of the Y precursor on h-BN due to the polarization. Although a full surface coverage was difficult to achieve, the use of an oxidized metal seeding layer on h-BN resulted in a full surface coverage.
authors: Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
authors: N
authors: N
authors: Takahashi
authors: K
authors: K
authors: Watanabe
authors: T
authors: T
authors: Taniguchi
authors: K
authors: K
authors: Nagashio