title: Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy.
abstract: We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.
authors: Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 30010 Taiwan.
authors: Shih-Wei
authors: SW
authors: Lin
authors: Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010 Taiwan.
authors: Yue-Han
authors: YH
authors: Wu
authors: Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010 Taiwan.
authors: Li
authors: L
authors: Chang
authors: Department of Physics, National Taiwan University, Taipei, 10617 Taiwan ; Geballe Laboratory for Advanced Materials (GLAM), Stanford University, Stanford, CA 94305 USA.
authors: Chi-Te
authors: CT
authors: Liang
authors: Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 30010 Taiwan.
authors: Sheng-Di
authors: SD
authors: Lin
keywords: Pure electron-electron dephasing; Ultrathin metal films; Weak anti-localization