title: Single photon detector with high polarization sensitivity.
abstract: Polarization is one of the key parameters of light. Most optical detectors are intensity detectors that are insensitive to the polarization of light. A superconducting nanowire single photon detector (SNSPD) is naturally sensitive to polarization due to its nanowire structure. Previous studies focused on producing a polarization-insensitive SNSPD. In this study, by adjusting the width and pitch of the nanowire, we systematically investigate the preparation of an SNSPD with high polarization sensitivity. Subsequently, an SNSPD with a system detection efficiency of 12% and a polarization extinction ratio of 22 was successfully prepared.
authors: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, 865 Changning Rd., Shanghai 200050, China.
authors: Qi
authors: Q
authors: Guo
authors: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, 865 Changning Rd., Shanghai 200050, China.
authors: Hao
authors: H
authors: Li
authors: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, 865 Changning Rd., Shanghai 200050, China.
authors: LiXing
authors: L
authors: You
authors: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, 865 Changning Rd., Shanghai 200050, China.
authors: WeiJun
authors: W
authors: Zhang
authors: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, 865 Changning Rd., Shanghai 200050, China.
authors: Lu
authors: L
authors: Zhang
authors: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, 865 Changning Rd., Shanghai 200050, China.
authors: Zhen
authors: Z
authors: Wang
authors: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, 865 Changning Rd., Shanghai 200050, China.
authors: XiaoMing
authors: X
authors: Xie
authors: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, 865 Changning Rd., Shanghai 200050, China.
authors: Ming
authors: M
authors: Qi