title: Self-organized patterns in successive bifurcations in planar semiconductor-gas-discharge device.
abstract: The formation of dissipative structures is investigated in a planar semiconductor-gas-discharge device at room temperature. The width of the discharge gap is about 1 mm. The gap is filled with nitrogen at a pressure that corresponds to the discharge operation at the right branch of the Paschen curve. Wafers of semi-insulating GaAs that exhibit linear transport in the whole range of voltage and current studied are used as semiconductor electrodes. In addition to the earlier investigated Andronov-Hopf bifurcation, a different mode of self-organization of the device is observed, where the transport of charge proceeds through an ensemble of pulsating current filaments. The corresponding critical current for the present bifurcation does not depend on the polarity of the bias voltage, while the spatiotemporal dynamics of a pattern differs substantially for a change in the polarity. Pulsating filaments can form a spatially ordered pattern when the GaAs electrode is under the positive potential. We also observe self-organization modes, where pulsating filaments form an irregular spatiotemporal dynamics of a pattern. The data obtained are briefly discussed in the frame of corresponding theoretical results in the field.
authors: Ioffe Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia.
authors: Yu A
authors: YA
authors: Astrov
authors: Ioffe Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia.
authors: A N
authors: AN
authors: Lodygin
authors: Ioffe Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia.
authors: L M
authors: LM
authors: Portsel