title: Highly Stable and Tunable n-Type Graphene Field-Effect Transistors with Poly(vinyl alcohol) Films.
abstract: The intrinsic p-type behavior of graphene field-effect transistors (FETs) under ambient conditions poses a fundamental challenge for the assembly of complex electronic devices, such as integrated circuits. In this work, we present a protocol for tunable n-type doping of graphene FETs via poly(vinyl alcohol) (PVA) coating. Using graphene grown by alcohol catalytic chemical vapor deposition, functionalization of the surface by this hydroxyl anion-rich polymer results in an evolution of the FETs from p-type to ambipolar or n-type even under ambient air conditions. The doping level of graphene is strongly related to the PVA film coating parameters, such as solution concentration, hardening temperature, and hardening time. This PVA coating proves to be a simple and stable approach to tuning the Dirac point and doping level of graphene, which is highly desirable and of great significance for the future of graphene-based electronic devices.
authors: †Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
authors: Sungjin
authors: S
authors: Kim
authors: §Institute of Applied Mechanics, Zhejiang University, Hangzhou, Zhejiang 310027, China.
authors: Pei
authors: P
authors: Zhao
authors: ‡Research Institute for Science and Technology, Kougakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan.
authors: Shinya
authors: S
authors: Aikawa
authors: ⊥Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States.
authors: Erik
authors: E
authors: Einarsson
authors: †Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
authors: Shohei
authors: S
authors: Chiashi
authors: †Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.|#Energy NanoEngineering Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, 305-8564, Japan.
authors: Shigeo
authors: S
authors: Maruyama
keywords: chemical vapor deposition; field-effect transistor; graphene; n-type doping; poly(vinyl alcohol) thin film