title: Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices.
abstract: Epitaxial m-plane ZnO thin films have been deposited on m-plane sapphire substrates at a low temperature of 200°C by atomic layer deposition. A 90° in-plane rotation is observed between the m-plane ZnO thin films and the sapphire substrates. Moreover, the residual strain along the ZnO [-12-10] direction is released. To fabricate metal-insulator-semiconductor devices, a 50-nm Al2O3 thin film is deposited on the m-plane ZnO thin films. It is interesting to observe the near-infrared random lasing from the metal-insulator-semiconductor devices.
authors: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072 People's Republic of China.
authors: Chao
authors: C
authors: Chen
authors: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072 People's Republic of China.
authors: Ti
authors: T
authors: Wang
authors: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072 People's Republic of China.
authors: Hao
authors: H
authors: Wu
authors: Center for Electron Microscopy, School of Physics and Technology, Wuhan University, Wuhan, 430072 People's Republic of China.
authors: He
authors: H
authors: Zheng
authors: Center for Electron Microscopy, School of Physics and Technology, Wuhan University, Wuhan, 430072 People's Republic of China.
authors: Jianbo
authors: J
authors: Wang
authors: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072 People's Republic of China.
authors: Yang
authors: Y
authors: Xu
authors: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072 People's Republic of China.
authors: Chang
authors: C
authors: Liu
keywords: MIS; Random lasing; m-plane ZnO