title: Enhanced performance of photonic crystal GaN light-emitting diodes with graphene transparent electrodes.
abstract: The two-dimensional (2D) triangle lattice air hole photonic crystal (PC) GaN-based light-emitting diodes (LED) with double-layer graphene transparent electrodes (DGTE) have been produced. The current spreading effect of the double-layer graphene (GR) on the surface of the PC structure of the LED has been researched. Specially, we found that the part of the graphene suspending over the air hole of the PC structure was of much higher conductivity, which reduced the average sheet resistance of the graphene transparent conducting electrode and improved the current spreading of the PC LED. Therefore, the work voltage of the DGTE-PC LED was obviously decreased, and the output power was greatly enhanced. The COMSOL software was used to simulate the current density distribution of the samples. The results show that the etching of PC structure results in the degradation of the current spreading and that the graphene transparent conducting electrode can offer an uniform current spreading in the DGTE-PC LED.
  85.60.Jb; 68.65.Pq; 42.70.Qs.
authors: The Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124 People's Republic of China.
authors: Hai-Liang
authors: HL
authors: Ge
authors: The Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124 People's Republic of China.
authors: Chen
authors: C
authors: Xu
authors: The Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124 People's Republic of China.
authors: Kun
authors: K
authors: Xu
authors: The Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124 People's Republic of China.
authors: Meng
authors: M
authors: Xun
authors: The Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124 People's Republic of China.
authors: Jun
authors: J
authors: Wang
authors: The Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124 People's Republic of China.
authors: Jie
authors: J
authors: Liu
keywords: GaN-based light-emitting diodes; Graphene; Photonic crystal