title: High-temperature stable field emission of B-doped SiC nanoneedle arrays.
abstract: Current emission stability is one of the key issues for field emitters for them to be practically applied as electron sources. In the present work, large-scale and well-aligned B-doped SiC nanoneedle arrays have been grown on 6H-SiC wafer substrates via pyrolysis of polymeric precursors. The measured field emission (FE) characteristics suggest that the turn-on fields of the as-synthesized SiC nanoneedle arrays are reduced from 1.92 to 0.98 V μm(-1) with temperature increasing from room temperature (RT) to 500 °C, suggesting their excellent FE performances. The slightly changed current fluctuations (only ∼1.3%) between RT and 200 °C confirm that the present SiC nanoarrays with B dopants could be highly stable field emitters to be used in service under harsh conditions of high temperatures.
authors: School of Materials Science and Engineering, University of Science & Technology Beijing, Beijing City, 100083, P.R. China. chengmli@mater.ustb.edu.cn.
authors: Lin
authors: L
authors: Wang
authors: Guodong
authors: G
authors: Wei
authors: Fengmei
authors: F
authors: Gao
authors: Chengming
authors: C
authors: Li
authors: Weiyou
authors: W
authors: Yang