title: InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments.
abstract: We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favorable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures.
authors: †School of Physics, University of New South Wales, Sydney, NSW 2052, Australia.|‡Solid State Physics/Nanometer Structure Consortium (nmC@LU), Lund University, SE-221 00 Lund, Sweden.
authors: A M
authors: AM
authors: Burke
authors: †School of Physics, University of New South Wales, Sydney, NSW 2052, Australia.
authors: D J
authors: DJ
authors: Carrad
authors: †School of Physics, University of New South Wales, Sydney, NSW 2052, Australia.
authors: J G
authors: JG
authors: Gluschke
authors: ‡Solid State Physics/Nanometer Structure Consortium (nmC@LU), Lund University, SE-221 00 Lund, Sweden.
authors: K
authors: K
authors: Storm
authors: ‡Solid State Physics/Nanometer Structure Consortium (nmC@LU), Lund University, SE-221 00 Lund, Sweden.
authors: S
authors: S
authors: Fahlvik Svensson
authors: ‡Solid State Physics/Nanometer Structure Consortium (nmC@LU), Lund University, SE-221 00 Lund, Sweden.
authors: H
authors: H
authors: Linke
authors: ‡Solid State Physics/Nanometer Structure Consortium (nmC@LU), Lund University, SE-221 00 Lund, Sweden.
authors: L
authors: L
authors: Samuelson
authors: †School of Physics, University of New South Wales, Sydney, NSW 2052, Australia.
authors: A P
authors: AP
authors: Micolich
keywords: III−V nanowires; field-effect transistor; gate-all-around; wrap-gate