title: High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy.
abstract: Atomically-thin, inherently 2D semiconductors offer thickness scaling of nanoelectronic devices and excellent response to light for low-power versatile applications. Using small exfoliated flakes, advanced devices and integrated circuits have already been realized, showing great potential to impact nanoelectronics. Here, high-quality single-crystal MoSe2 is grown by molecular beam epitaxy on AlN(0001)/Si(111), showing the potential for scaling up growth to low-cost, large-area substrates for mass production. The MoSe2 layers are epitaxially aligned with the aluminum nitride (AlN) lattice, showing a uniform, smooth surface and interfaces with no reaction or intermixing, and with sufficiently high band offsets. High-quality single-layer MoSe2 is obtained, with a direct gap evidenced by angle-resolved photoemission spectroscopy and further confirmed by Raman and intense room temperature photoluminescence. The successful growth of high-quality MoSe2/Bi2Se3 multilayers on AlN shows promise for novel devices exploiting the non-trivial topological properties of Bi2Se3.
authors: Institute of Nanoscience and Nanotechnology, NCSR DEMOKRITOS, GR-15310, Athens, Greece. dimoulas@ims.demokritos.gr.
authors: E
authors: E
authors: Xenogiannopoulou
authors: P
authors: P
authors: Tsipas
authors: K E
authors: KE
authors: Aretouli
authors: D
authors: D
authors: Tsoutsou
authors: S A
authors: SA
authors: Giamini
authors: C
authors: C
authors: Bazioti
authors: G P
authors: GP
authors: Dimitrakopulos
authors: Ph
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authors: Komninou
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authors: S
authors: Brems
authors: C
authors: C
authors: Huyghebaert
authors: I P
authors: IP
authors: Radu
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authors: Dimoulas