title: In situ synthesis of a large area boron nitride/graphene monolayer/boron nitride film by chemical vapor deposition.
abstract: We describe the successful in situ chemical vapor deposition synthesis of a graphene-based heterostructure in which a graphene monolayer is protected by top and bottom boron nitride films. The boron nitride film/graphene monolayer/boron nitride film (BGB) was found to be a mechanically robust and chemically inert heterostructure, from which the deleterious effects of mechanical transfer processes and unwanted chemical doping under air exposure were eliminated. The chemical compositions of each film layer were monitored ex situ using UV-visible absorption spectroscopy and X-ray photoelectron spectroscopy, and the crystalline structures were confirmed using transmission electron microscopy and selected-area electron diffraction measurements. The performance of the devices fabricated using the BGB film was monitored over six months and did not display large changes in the mobility or the Dirac point, unlike the conventional graphene devices prepared on a SiO2 substrate. The in situ-grown BGB film properties suggest a novel approach to the fabrication of commercial-grade graphene-based electronic devices.
authors: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 440-746, Korea. yjsong@skku.edu leesj@skku.edu.
authors: Qinke
authors: Q
authors: Wu
authors: Sung Kyu
authors: SK
authors: Jang
authors: Sangwoo
authors: S
authors: Park
authors: Seong Jun
authors: SJ
authors: Jung
authors: Hwansoo
authors: H
authors: Suh
authors: Young Hee
authors: YH
authors: Lee
authors: Sungjoo
authors: S
authors: Lee
authors: Young Jae
authors: YJ
authors: Song