title: Electronic transport in two-dimensional high dielectric constant nanosystems.
abstract: There has been remarkable recent progress in engineering high-dielectric constant two dimensional (2D) materials, which are being actively pursued for applications in nanoelectronics in capacitor and memory devices, energy storage, and high-frequency modulation in communication devices. Yet many of the unique properties of these systems are poorly understood and remain unexplored. Here we report a numerical study of hopping conductivity of the lateral network of capacitors, which models two-dimensional insulators, and demonstrate that 2D long-range Coulomb interactions lead to peculiar size effects. We find that the characteristic energy governing electronic transport scales logarithmically with either system size or electrostatic screening length depending on which one is shorter. Our results are relevant well beyond their immediate context, explaining, for example, recent experimental observations of logarithmic size dependence of electric conductivity of thin superconducting films in the critical vicinity of superconductor-insulator transition where a giant dielectric constant develops. Our findings mark a radical departure from the orthodox view of conductivity in 2D systems as a local characteristic of materials and establish its macroscopic global character as a generic property of high-dielectric constant 2D nanomaterials.
authors: Departamento de Física - CIOyN, Universidad de Murcia, Murcia 30071, Spain.
authors: M
authors: M
authors: Ortuño
authors: Departamento de Física - CIOyN, Universidad de Murcia, Murcia 30071, Spain.
authors: A M
authors: AM
authors: Somoza
authors: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors: V M
authors: VM
authors: Vinokur
authors: 1] Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA [2] Novosibirsk State University, Pirogova str. 2, Novosibirsk 630090, Russia [3] A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090 Russia.
authors: T I
authors: TI
authors: Baturina