title: Synthesis of centimeter-scale monolayer tungsten disulfide film on gold foils.
abstract: We report the synthesis of centimeter-scale monolayer WS2 on gold foil by chemical vapor deposition. The limited tungsten and sulfur solubility in gold foil allows monolayer WS2 film growth on gold surface. To ensure the coverage uniformity of monolayer WS2 film, the tungsten source-coated substrate was placed in parallel with Au foil under hydrogen sulfide atmosphere. The high growth temperature near 935 °C helps to increase a domain size up to 420 μm. Gold foil is reused for the repeatable growth after bubbling transfer. The WS2-based field effect transistor reveals an electron mobility of 20 cm(2) V(-1) s(-1) with high on-off ratio of ∼10(8) at room temperature, which is the highest reported value from previous reports of CVD-grown WS2 samples. The on-off ratio of integrated multiple FETs on the large area WS2 film on SiO2 (300 nm)/Si substrate shows within the same order, implying reasonable uniformity of WS2 FET device characteristics over a large area of 3 × 1.5 cm(2).
authors: †IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors: Seok Joon
authors: SJ
authors: Yun
authors: †IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors: Sang Hoon
authors: SH
authors: Chae
authors: †IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors: Hyun
authors: H
authors: Kim
authors: †IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors: Jin Cheol
authors: JC
authors: Park
authors: †IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors: Ji-Hoon
authors: JH
authors: Park
authors: †IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors: Gang Hee
authors: GH
authors: Han
authors: ⊥Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), San101 Eunha-Ri, Bongdong-Eup, Wanju-Gun, Jeollabuk-Do 565-902, Republic of Korea.
authors: Joo Song
authors: JS
authors: Lee
authors: ⊥Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), San101 Eunha-Ri, Bongdong-Eup, Wanju-Gun, Jeollabuk-Do 565-902, Republic of Korea.
authors: Soo Min
authors: SM
authors: Kim
authors: †IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors: Hye Min
authors: HM
authors: Oh
authors: †IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors: Jinbong
authors: J
authors: Seok
authors: †IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors: Mun Seok
authors: MS
authors: Jeong
authors: ∥Department of Energy and Materials Engineering, Dongguk University-Seoul, Seoul 100-715, Republic of Korea.
authors: Ki Kang
authors: KK
authors: Kim
authors: †IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors: Young Hee
authors: YH
authors: Lee
keywords: bubbling transfer; chemical vapor deposition; field effect transistor; gold; transition metal dichalcogenides; tungsten disulfide