title: On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers.
abstract: Cavity-length dependence of the property of optically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs) with two dielectric distributed Bragg reflectors was investigated. The cavity lengths were well controlled by employing etching with inductively coupled plasma and chemical mechanical polishing. It was found that the lasing characteristics including threshold, slope efficiency and spontaneous emission coupling factor were substantially improved with reducing the cavity length. In comparison with the device pumped by a 400 nm pulsed laser, the lasing spectrum was featured by a red shift and simultaneous broadening with increasing the pumping energy of a 355 nm pulsed laser. Moreover, the lasing threshold was much higher when pumped by a 355 nm pulsed laser. These were explained by taking into account of the significant heating effect under 355 nm pumping. Our results demonstrate that a short cavity length and good heat-dissipation are essential to GaN-based VCSELs.
authors: Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors: W J
authors: WJ
authors: Liu
authors: Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors: X L
authors: XL
authors: Hu
authors: Department of Electronic Engineering, Xiamen University, Xiamen 361005, P. R. China.
authors: L Y
authors: LY
authors: Ying
authors: 1] Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China [2] Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan.
authors: S Q
authors: SQ
authors: Chen
authors: Department of Electronic Engineering, Xiamen University, Xiamen 361005, P. R. China.
authors: J Y
authors: JY
authors: Zhang
authors: Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan.
authors: H
authors: H
authors: Akiyama
authors: Department of Electronic Engineering, Xiamen University, Xiamen 361005, P. R. China.
authors: Z P
authors: ZP
authors: Cai
authors: 1] Department of Physics, Xiamen University, Xiamen 361005, P. R. China [2] Department of Electronic Engineering, Xiamen University, Xiamen 361005, P. R. China.
authors: B P
authors: BP
authors: Zhang