title: Polarization screening-induced magnetic phase gradients at complex oxide interfaces.
abstract: Thin-film oxide heterostructures show great potential for use in spintronic memories, where electronic charge and spin are coupled to transport information. Here we use a La0.7Sr0.3MnO3 (LSMO)/PbZr0.2Ti0.8O3 (PZT) model system to explore how local variations in electronic and magnetic phases mediate this coupling. We present direct, local measurements of valence, ferroelectric polarization and magnetization, from which we map the phases at the LSMO/PZT interface. We combine these experimental results with electronic structure calculations to elucidate the microscopic interactions governing the interfacial response of this system. We observe a magnetic asymmetry at the LSMO/PZT interface that depends on the local PZT polarization and gives rise to gradients in local magnetic moments; this is associated with a metal-insulator transition at the interface, which results in significantly different charge-transfer screening lengths. This study establishes a framework to understand the fundamental asymmetries of magnetoelectric coupling in oxide heterostructures.
authors: Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USA.
authors: Steven R
authors: SR
authors: Spurgeon
authors: Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USA.
authors: Prasanna V
authors: PV
authors: Balachandran
authors: SuperSTEM, SciTech Daresbury Campus, Daresbury, WA44AD, UK.
authors: Despoina M
authors: DM
authors: Kepaptsoglou
authors: Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, USA.
authors: Anoop R
authors: AR
authors: Damodaran
authors: Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, Illinois 61801, USA.
authors: J
authors: J
authors: Karthik
authors: Department of Chemical and Biological Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USA.
authors: Siamak
authors: S
authors: Nejati
authors: Department of Materials, University of Oxford, Oxford OX13PH, UK.
authors: Lewys
authors: L
authors: Jones
authors: Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors: Haile
authors: H
authors: Ambaye
authors: Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors: Valeria
authors: V
authors: Lauter
authors: SuperSTEM, SciTech Daresbury Campus, Daresbury, WA44AD, UK.
authors: Quentin M
authors: QM
authors: Ramasse
authors: Department of Chemical and Biological Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USA.
authors: Kenneth K S
authors: KKS
authors: Lau
authors: Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, USA.|Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
authors: Lane W
authors: LW
authors: Martin
authors: Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, USA.
authors: James M
authors: JM
authors: Rondinelli
authors: Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USA.
authors: Mitra L
authors: ML
authors: Taheri