title: Persistence of a two-dimensional topological insulator state in wide HgTe quantum wells.
abstract: Our experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm the persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically. Comparison of local and nonlocal resistance measurements indicate edge state transport in the samples of about 1 mm size at temperatures below 1 K. Temperature dependence of the resistances suggests an insulating gap of the order of a few meV. In samples with sizes smaller than 10  μm a quasiballistic transport via the edge states is observed.
authors: Institute of Semiconductor Physics, Novosibirsk 630090, Russia.
authors: E B
authors: EB
authors: Olshanetsky
authors: Institute of Semiconductor Physics, Novosibirsk 630090, Russia.|Novosibirsk State University, Novosibirsk 630090, Russia.
authors: Z D
authors: ZD
authors: Kvon
authors: Instituto de Física da Universidade de São Paulo, 135960-170 São Paulo, São Paulo, Brazil.
authors: G M
authors: GM
authors: Gusev
authors: Instituto de Física da Universidade de São Paulo, 135960-170 São Paulo, São Paulo, Brazil.
authors: A D
authors: AD
authors: Levin
authors: Institute of Semiconductor Physics, NAS of Ukraine, Prospekt Nauki 41, 03028 Kyiv, Ukraine.
authors: O E
authors: OE
authors: Raichev
authors: Institute of Semiconductor Physics, Novosibirsk 630090, Russia.
authors: N N
authors: NN
authors: Mikhailov
authors: Institute of Semiconductor Physics, Novosibirsk 630090, Russia.
authors: S A
authors: SA
authors: Dvoretsky