title: Ink-Jet Printed CMOS Electronics from Oxide Semiconductors.
abstract: Complementary metal oxide semiconductor (CMOS) technology with high transconductance and signal gain is mandatory for practicable digital/analog logic electronics. However, high performance all-oxide CMOS logics are scarcely reported in the literature; specifically, not at all for solution-processed/printed transistors. As a major step toward solution-processed all-oxide electronics, here it is shown that using a highly efficient electrolyte-gating approach one can obtain printed and low-voltage operated oxide CMOS logics with high signal gain (≈21 at a supply voltage of only 1.5 V) and low static power dissipation.
authors: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany.|KIT-TUD Joint Research Laboratory Nanomaterials, Institute of Materials Science, Technische Universität Darmstadt (TUD), Jovanka-Bontschits-Str. 2, 64287, Darmstadt, Germany.
authors: Suresh Kumar
authors: SK
authors: Garlapati
authors: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany.|Helmholtz Institute Ulm for Electrochemical Energy Storage (HIU), 89069, Ulm, Germany.
authors: Tessy Theres
authors: TT
authors: Baby
authors: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany.
authors: Simone
authors: S
authors: Dehm
authors: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany.
authors: Mohammed
authors: M
authors: Hammad
authors: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany.|Helmholtz Institute Ulm for Electrochemical Energy Storage (HIU), 89069, Ulm, Germany.|Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology, D-76021, Karlsruhe, Germany.
authors: Venkata Sai Kiran
authors: VS
authors: Chakravadhanula
authors: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany.
authors: Robert
authors: R
authors: Kruk
authors: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany.|KIT-TUD Joint Research Laboratory Nanomaterials, Institute of Materials Science, Technische Universität Darmstadt (TUD), Jovanka-Bontschits-Str. 2, 64287, Darmstadt, Germany.|Helmholtz Institute Ulm for Electrochemical Energy Storage (HIU), 89069, Ulm, Germany.
authors: Horst
authors: H
authors: Hahn
authors: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany.
authors: Subho
authors: S
authors: Dasgupta
keywords: electrolyte gating; ink-jet printing; oxide semiconductors; printed electronics