title: Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling.
abstract: The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm(2)), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.
authors: Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul, 136-791 South Korea ; Institute of Physics and Applied Physics, Yonsei University, Seoul, 120-749 South Korea.
authors: Eun-Hye
authors: EH
authors: Lee
authors: Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul, 136-791 South Korea.
authors: Jin-Dong
authors: JD
authors: Song
authors: Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul, 136-791 South Korea.
authors: Il-Ki
authors: IK
authors: Han
authors: Institute of Physics and Applied Physics, Yonsei University, Seoul, 120-749 South Korea.
authors: Soo-Kyung
authors: SK
authors: Chang
authors: Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.
authors: Fabian
authors: F
authors: Langer
authors: Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.
authors: Sven
authors: S
authors: Höfling
authors: Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.
authors: Alfred
authors: A
authors: Forchel
authors: Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.
authors: Martin
authors: M
authors: Kamp
authors: Department of Physics, Yeungnam University, Gyeongsangbuk-Do, 712-749 South Korea.
authors: Jong-Su
authors: JS
authors: Kim
keywords: Droplet epitaxy; GaAs; Micro-photoluminescence; Quantum dot; Single photon