title: Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell.
abstract: The InAs/GaAs quantum dots structure embedded in GaInP/Ga(In)As/Ge triple junction solar cell with and without Ga0.90In0.10As strain reducing layer was investigated. Conversion efficiency of 33.91% at 1,000 suns AM 1.5D with Ga0.90In0.10As strain reducing layer was demonstrated. A 1.19% improvement of the conversion efficiency was obtained via inserting the Ga0.90In0.10As strain reducing layer. The main contribution of this improvement was from the increase of the short-circuit current, which is caused by the reduction of the Shockley-Read-Hall recombination centers. Consequently, there was a decrease in open circuit voltage due to the lower thermal activation energy of confined carriers in Ga0.9In0.1As than GaAs and a reduction in the effective band gap of quantum dots.
authors: Xiamen San'an Optoelectronics Co., Ltd, Xiamen, 361009 China ; Tianjin San'an Optoelectronics Co., Ltd, Tianjin, 300384 China ; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 China.
authors: Senlin
authors: S
authors: Li
authors: Xiamen San'an Optoelectronics Co., Ltd, Xiamen, 361009 China ; Tianjin San'an Optoelectronics Co., Ltd, Tianjin, 300384 China.
authors: Jingfeng
authors: J
authors: Bi
authors: Tianjin San'an Optoelectronics Co., Ltd, Tianjin, 300384 China.
authors: Mingyang
authors: M
authors: Li
authors: Tianjin San'an Optoelectronics Co., Ltd, Tianjin, 300384 China.
authors: Meijia
authors: M
authors: Yang
authors: Xiamen San'an Optoelectronics Co., Ltd, Xiamen, 361009 China ; Tianjin San'an Optoelectronics Co., Ltd, Tianjin, 300384 China.
authors: Minghui
authors: M
authors: Song
authors: Xiamen San'an Optoelectronics Co., Ltd, Xiamen, 361009 China ; Tianjin San'an Optoelectronics Co., Ltd, Tianjin, 300384 China.
authors: Guanzhou
authors: G
authors: Liu
authors: Tianjin San'an Optoelectronics Co., Ltd, Tianjin, 300384 China.
authors: Weiping
authors: W
authors: Xiong
authors: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 China.
authors: Yang
authors: Y
authors: Li
authors: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 China.
authors: Yanyan
authors: Y
authors: Fang
authors: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 China.
authors: Changqing
authors: C
authors: Chen
authors: Xiamen San'an Optoelectronics Co., Ltd, Xiamen, 361009 China ; Tianjin San'an Optoelectronics Co., Ltd, Tianjin, 300384 China.
authors: Guijiang
authors: G
authors: Lin
authors: Tianjin San'an Optoelectronics Co., Ltd, Tianjin, 300384 China.
authors: Wenjun
authors: W
authors: Chen
authors: Tianjin San'an Optoelectronics Co., Ltd, Tianjin, 300384 China.
authors: Chaoyu
authors: C
authors: Wu
authors: Tianjin San'an Optoelectronics Co., Ltd, Tianjin, 300384 China.
authors: Duxiang
authors: D
authors: Wang
keywords: InAs quantum dots; Metal organic chemical vapor deposition; Strain reducing layer; Triple junction solar cell