title: Investigation of CuGaSe2/CuInSe2double heterojunction interfaces grown by molecular beam epitaxy.
abstract: In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced epitaxy sequence are observed and the growths of smooth surfaces are confirmed. RHEED observation results also confirmed constituent material interdiffusion at the heterointerface. Cross-sectional transmission electron microscopy showed a flat and abrupt heterointerface when the substrate temperature is as low as 400 °C. These have been confirmed even by X-ray diffraction and photoluminescence measurements.
authors: Sathiabama
authors: S
authors: Thiru
authors: School of Advanced Science and Engineering, Waseda University , 3-4-1, Okubo, Shinjuku, Tokyo 169-8555, JAPAN.
authors: Masaki
authors: M
authors: Asakawa
authors: School of Advanced Science and Engineering, Waseda University , 3-4-1, Okubo, Shinjuku, Tokyo 169-8555, JAPAN.
authors: Kazuki
authors: K
authors: Honda
authors: CREST, JST , 4-1-8, Honcho Kawaguchi, Saitama, 332-0012, JAPAN.
authors: Atsushi
authors: A
authors: Kawaharazuka
authors: School of Advanced Science and Engineering, Waseda University , 3-4-1, Okubo, Shinjuku, Tokyo 169-8555, JAPAN.
authors: Atsushi
authors: A
authors: Tackeuchi
authors: Toshiki
authors: T
authors: Makimoto
authors: Yoshiji
authors: Y
authors: Horikoshi