title: Mechanical Tuning of LaAlO3/SrTiO3 Interface Conductivity.
abstract: In recent years, complex-oxide heterostructures and their interfaces have become the focus of significant research activity, primarily driven by the discovery of emerging states and functionalities that open up opportunities for the development of new oxide-based nanoelectronic devices. The highly conductive state at the interface between insulators LaAlO3 and SrTiO3 is a prime example of such emergent functionality, with potential application in high electron density transistors. In this report, we demonstrate a new paradigm for voltage-free tuning of LaAlO3/SrTiO3 (LAO/STO) interface conductivity, which involves the mechanical gating of interface conductance through stress exerted by the tip of a scanning probe microscope. The mechanical control of channel conductivity and the long retention time of the induced resistance states enable transistor functionality with zero gate voltage.
authors: P
authors: P
authors: Sharma
authors: ‡Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
authors: S
authors: S
authors: Ryu
authors: J D
authors: JD
authors: Burton
authors: T R
authors: TR
authors: Paudel
authors: ‡Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
authors: C W
authors: CW
authors: Bark
authors: Z
authors: Z
authors: Huang
authors: Ariando
authors: E Y
authors: EY
authors: Tsymbal
authors: ∥ICREA-Institut Catala de Recerca i Estudis Avançats, Barcelona, Spain.|⊥ICN2-Institut Catala de Nanociencia i Nanotecnologia, Campus de Bellaterra, Barcelona, Spain.
authors: G
authors: G
authors: Catalan
authors: ‡Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
authors: C B
authors: CB
authors: Eom
authors: A
authors: A
authors: Gruverman
keywords: 2D electron gas; Complex oxides; heterointerfaces; memristors; resistive switching