title: Physical and chemical mechanisms in oxide-based resistance random access memory.
abstract: In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.
authors: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.
authors: Kuan-Chang
authors: KC
authors: Chang
authors: Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan.
authors: Ting-Chang
authors: TC
authors: Chang
authors: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.
authors: Tsung-Ming
authors: TM
authors: Tsai
authors: Information Technology Center, BGP, China National Petroleum Corporation, Beijing, China.
authors: Rui
authors: R
authors: Zhang
authors: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.
authors: Ya-Chi
authors: YC
authors: Hung
authors: Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan.
authors: Yong-En
authors: YE
authors: Syu
authors: Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758 USA.
authors: Yao-Feng
authors: YF
authors: Chang
authors: Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan.
authors: Min-Chen
authors: MC
authors: Chen
authors: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.
authors: Tian-Jian
authors: TJ
authors: Chu
authors: Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan.
authors: Hsin-Lu
authors: HL
authors: Chen
authors: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.
authors: Chih-Hung
authors: CH
authors: Pan
authors: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.
authors: Chih-Cheng
authors: CC
authors: Shih
authors: Department of Physics, Xiamen University, Xiamen, 361005 China.
authors: Jin-Cheng
authors: JC
authors: Zheng
authors: Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan ; Department of Electrical Engineering, Stanford University, Stanford, CA 94305 USA.
authors: Simon M
authors: SM
authors: Sze
keywords: Graphene oxide; Physical mechanism; RRAM; Silicon oxide; Supercritical fluids