title: Atomic layer deposition for fabrication of HfO2/Al2O3 thin films with high laser-induced damage thresholds.
abstract: Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically, the LIDT of the Al2O3 thin film reached 40 J/cm(2). The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high-power laser systems.
authors: Chengdu Fine Optical Engineering Research Center, Chengdu, Sichuan 610041 P. R. China.
authors: Yaowei
authors: Y
authors: Wei
authors: Chengdu Fine Optical Engineering Research Center, Chengdu, Sichuan 610041 P. R. China.
authors: Feng
authors: F
authors: Pan
authors: Chengdu Fine Optical Engineering Research Center, Chengdu, Sichuan 610041 P. R. China.
authors: Qinghua
authors: Q
authors: Zhang
authors: Chengdu Fine Optical Engineering Research Center, Chengdu, Sichuan 610041 P. R. China.
authors: Ping
authors: P
authors: Ma
keywords: Atomic layer deposition; Laser-induced damage threshold; Optical properties