title: Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen.
abstract: We studied the optical properties of metalorganic chemical vapour deposited (MOCVD) InGaN/GaN multiple quantum wells (MQW) subjected to nitrogen (N) implantation and post-growth annealing treatments. The optical characterization was carried out by means of temperature and excitation density-dependent steady state photoluminescence (PL) spectroscopy, supplemented by room temperature PL excitation (PLE) and PL lifetime (PLL) measurements. The as-grown and as-implanted samples were found to exhibit a single green emission band attributed to localized excitons in the QW, although the N implantation leads to a strong reduction of the PL intensity. The green band was found to be surprisingly stable on annealing up to 1400°C. A broad blue band dominates the low temperature PL after thermal annealing in both samples. This band is more intense for the implanted sample, suggesting that defects generated by N implantation, likely related to the diffusion/segregation of indium (In), have been optically activated by the thermal treatment.
authors: Departamento de Física e I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal.
authors: Marco A
authors: MA
authors: Sousa
authors: Departamento de Física e I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal.
authors: Teresa C
authors: TC
authors: Esteves
authors: Departamento de Física e I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal.
authors: Nabiha Ben
authors: NB
authors: Sedrine
authors: Departamento de Física e I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal.
authors: Joana
authors: J
authors: Rodrigues
authors: IPFN, Instituto Superior Técnico, Campus Tecnológico e Nuclear, E.N. 10, P-2695-066 Bobadela LRS, Portugal.
authors: Márcio B
authors: MB
authors: Lourenço
authors: 1] IPFN, Instituto Superior Técnico, Campus Tecnológico e Nuclear, E.N. 10, P-2695-066 Bobadela LRS, Portugal [2] Departamento Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid, Spain.
authors: Andrés
authors: A
authors: Redondo-Cubero
authors: IPFN, Instituto Superior Técnico, Campus Tecnológico e Nuclear, E.N. 10, P-2695-066 Bobadela LRS, Portugal.
authors: Eduardo
authors: E
authors: Alves
authors: SUPA Department of Physics, University of Strathclyde, Glasgow, G4 0NG, Scotland, UK.
authors: Kevin P
authors: KP
authors: O'Donnell
authors: Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland.
authors: Michal
authors: M
authors: Bockowski
authors: Department of Physics and Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, New York 12180, USA.
authors: Christian
authors: C
authors: Wetzel
authors: Departamento de Física e I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal.
authors: Maria R
authors: MR
authors: Correia
authors: IPFN, Instituto Superior Técnico, Campus Tecnológico e Nuclear, E.N. 10, P-2695-066 Bobadela LRS, Portugal.
authors: Katharina
authors: K
authors: Lorenz
authors: Departamento de Física e I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal.
authors: Teresa
authors: T
authors: Monteiro