title: Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT.
abstract: The electronic properties of solution-processable small-molecule organic semiconductors (OSCs) have rapidly improved in recent years, rendering them highly promising for various low-cost large-area electronic applications. However, practical applications of organic electronics require patterned and precisely registered OSC films within the transistor channel region with uniform electrical properties over a large area, a task that remains a significant challenge. Here, we present a technique termed "controlled OSC nucleation and extension for circuits" (CONNECT), which uses differential surface energy and solution shearing to simultaneously generate patterned and precisely registered OSC thin films within the channel region and with aligned crystalline domains, resulting in low device-to-device variability. We have fabricated transistor density as high as 840 dpi, with a yield of 99%. We have successfully built various logic gates and a 2-bit half-adder circuit, demonstrating the practical applicability of our technique for large-scale circuit fabrication.
authors.affiliation: Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-4034;
authors.forename: Steve
authors.initials: S
authors.lastname: Park
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, CA 94305-4125;
authors.forename: Gaurav
authors.initials: G
authors.lastname: Giri
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, CA 94305-4125;
authors.forename: Leo
authors.initials: L
authors.lastname: Shaw
authors.affiliation: Department of Electrical Engineering, Stanford University, Stanford, CA 94305-9505; and.
authors.forename: Gregory
authors.initials: G
authors.lastname: Pitner
authors.affiliation: Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-742, South Korea.
authors.forename: Jewook
authors.initials: J
authors.lastname: Ha
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, CA 94305-4125;
authors.forename: Ja Hoon
authors.initials: JH
authors.lastname: Koo
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, CA 94305-4125;
authors.forename: Xiaodan
authors.initials: X
authors.lastname: Gu
authors.affiliation: Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-4034;
authors.forename: Joonsuk
authors.initials: J
authors.lastname: Park
authors.affiliation: Department of Electrical Engineering, Stanford University, Stanford, CA 94305-9505; and.
authors.forename: Tae Hoon
authors.initials: TH
authors.lastname: Lee
authors.affiliation: Department of Electrical Engineering, Stanford University, Stanford, CA 94305-9505; and.
authors.forename: Ji Hyun
authors.initials: JH
authors.lastname: Nam
authors.affiliation: Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-742, South Korea zbao@stanford.edu yongtaek@snu.ac.kr.
authors.forename: Yongtaek
authors.initials: Y
authors.lastname: Hong
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, CA 94305-4125; zbao@stanford.edu yongtaek@snu.ac.kr.
authors.forename: Zhenan
authors.initials: Z
authors.lastname: Bao
keywords: circuits; organic semiconductors; patterning; small molecules; transistors