title: Influence of surface pre-treatment on the electronic levels in silicon MaWCE nanowires.
abstract: Deep level transient spectroscopy (DLTS) was performed on n-doped silicon nanowires grown by metal-assisted wet chemical etching (MaWCE) with gold as the catalyst in order to investigate the energetic scheme inside the bandgap. To observe the possible dependence of the level scheme on the processing temperature, DLTS measurements were performed on the nanowires grown on a non-treated Au/Si surface and on a thermally pre-treated Au/Si surface. A noticeable modification of the configuration of the energy levels was observed, induced by the annealing process. Based on our results on these MaWCE nanowires and on literature data about deep levels in bulk silicon, some hypotheses were advanced regarding the identification of the defects responsible of the energy levels revealed.
authors.affiliation: University of Bologna Alma Mater Studiorum, Department of Physics and Astronomy, Viale Berti Pichat 6/2, I-40127 Bologna, Italy.
authors.forename: Giulia
authors.initials: G
authors.lastname: Venturi
authors.forename: Antonio
authors.initials: A
authors.lastname: Castaldini
authors.forename: Alexander
authors.initials: A
authors.lastname: Schleusener
authors.forename: Vladimir
authors.initials: V
authors.lastname: Sivakov
authors.forename: Anna
authors.initials: A
authors.lastname: Cavallini