title: Two-dimensional materials and their prospects in transistor electronics.
abstract: During the past decade, two-dimensional materials have attracted incredible interest from the electronic device community. The first two-dimensional material studied in detail was graphene and, since 2007, it has intensively been explored as a material for electronic devices, in particular, transistors. While graphene transistors are still on the agenda, researchers have extended their work to two-dimensional materials beyond graphene and the number of two-dimensional materials under examination has literally exploded recently. Meanwhile several hundreds of different two-dimensional materials are known, a substantial part of them is considered useful for transistors, and experimental transistors with channels of different two-dimensional materials have been demonstrated. In spite of the rapid progress in the field, the prospects of two-dimensional transistors still remain vague and optimistic opinions face rather reserved assessments. The intention of the present paper is to shed more light on the merits and drawbacks of two-dimensional materials for transistor electronics and to add a few more facets to the ongoing discussion on the prospects of two-dimensional transistors. To this end, we compose a wish list of properties for a good transistor channel material and examine to what extent the two-dimensional materials fulfill the criteria of the list. The state-of-the-art two-dimensional transistors are reviewed and a balanced view of both the pros and cons of these devices is provided.
authors.affiliation: Institut für Mikro- und Nanoelektronik, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau, Germany. frank.schwierz@tu-ilmenau.de.
authors.forename: F
authors.initials: F
authors.lastname: Schwierz
authors.forename: J
authors.initials: J
authors.lastname: Pezoldt
authors.forename: R
authors.initials: R
authors.lastname: Granzner