title: Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide.
abstract: Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10(-9) in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices.
authors.affiliation: LNE-Laboratoire National de Métrologie et d'Essais, Quantum electrical metrology department, Avenue Roger Hennequin, 78197 Trappes, France.
authors.forename: F
authors.initials: F
authors.lastname: Lafont
authors.affiliation: LNE-Laboratoire National de Métrologie et d'Essais, Quantum electrical metrology department, Avenue Roger Hennequin, 78197 Trappes, France.
authors.forename: R
authors.identifier: http://orcid.org/0000-0001-6169-3128
authors.initials: R
authors.lastname: Ribeiro-Palau
authors.affiliation: LPN-Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France.
authors.forename: D
authors.initials: D
authors.lastname: Kazazis
authors.affiliation: CRHEA-Centre de Recherche sur l'Hétéroépitaxie et ses Applications, CNRS, rue Bernard Grégory, 06560 Valbonne, France.
authors.forename: A
authors.initials: A
authors.lastname: Michon
authors.affiliation: L2C-Laboratoire Charles Coulomb, UMR 5221 CNRS-Université de Montpellier, Place Eugène Bataillon, 34095 Montpellier, France.
authors.forename: O
authors.initials: O
authors.lastname: Couturaud
authors.affiliation: L2C-Laboratoire Charles Coulomb, UMR 5221 CNRS-Université de Montpellier, Place Eugène Bataillon, 34095 Montpellier, France.
authors.forename: C
authors.initials: C
authors.lastname: Consejo
authors.affiliation: NOVASiC, Savoie Technolac, Arche Bat 4, 73375 Le Bourget du Lac, France.
authors.forename: T
authors.initials: T
authors.lastname: Chassagne
authors.affiliation: NOVASiC, Savoie Technolac, Arche Bat 4, 73375 Le Bourget du Lac, France.
authors.forename: M
authors.initials: M
authors.lastname: Zielinski
authors.affiliation: CRHEA-Centre de Recherche sur l'Hétéroépitaxie et ses Applications, CNRS, rue Bernard Grégory, 06560 Valbonne, France.
authors.forename: M
authors.initials: M
authors.lastname: Portail
authors.affiliation: L2C-Laboratoire Charles Coulomb, UMR 5221 CNRS-Université de Montpellier, Place Eugène Bataillon, 34095 Montpellier, France.
authors.forename: B
authors.initials: B
authors.lastname: Jouault
authors.affiliation: LNE-Laboratoire National de Métrologie et d'Essais, Quantum electrical metrology department, Avenue Roger Hennequin, 78197 Trappes, France.
authors.forename: F
authors.initials: F
authors.lastname: Schopfer
authors.affiliation: LNE-Laboratoire National de Métrologie et d'Essais, Quantum electrical metrology department, Avenue Roger Hennequin, 78197 Trappes, France.
authors.forename: W
authors.initials: W
authors.lastname: Poirier