title: Formation of GaP/Si(100) Heterointerfaces in the Presence of Inherent Reactor Residuals.
abstract: Adequate silicon preparation is a prerequisite for defect-free III-V growth on Si. We transfer the silicon processing from clean to GaP containing metalorganic vapor phase epitaxy reactors, where we monitor the entire process in situ with reflection anisotropy spectroscopy and analyze the chemical composition of the surface with X-ray photoelectron spectroscopy. Beyond a certain submonolayer threshold value of (Ga,P) residuals found on the Si(100) surface, GaP grows with an inverted majority sublattice. Analogously to III-V growth on two-domain substrates, the coexistence of Si-Ga and Si-P interfacial bonds at terraces of the same type causes antiphase disorder in GaP epilayers.
authors.affiliation: †Institut für Physik, Technische Universität Ilmenau, 98693 Ilmenau, Germany.|‡Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie, 14109 Berlin, Germany.|§Institut für Physik, Humboldt-Universität zu Berlin, 12489 Berlin, Germany.
authors.forename: Oliver
authors.initials: O
authors.lastname: Supplie
authors.affiliation: †Institut für Physik, Technische Universität Ilmenau, 98693 Ilmenau, Germany.|‡Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie, 14109 Berlin, Germany.|§Institut für Physik, Humboldt-Universität zu Berlin, 12489 Berlin, Germany.
authors.forename: Matthias M
authors.initials: MM
authors.lastname: May
authors.affiliation: ‡Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie, 14109 Berlin, Germany.
authors.forename: Christian
authors.initials: C
authors.lastname: Höhn
authors.affiliation: ‡Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie, 14109 Berlin, Germany.
authors.forename: Helena
authors.initials: H
authors.lastname: Stange
authors.affiliation: †Institut für Physik, Technische Universität Ilmenau, 98693 Ilmenau, Germany.
authors.forename: Antonio
authors.initials: A
authors.lastname: Müller
authors.affiliation: †Institut für Physik, Technische Universität Ilmenau, 98693 Ilmenau, Germany.
authors.forename: Peter
authors.initials: P
authors.lastname: Kleinschmidt
authors.affiliation: †Institut für Physik, Technische Universität Ilmenau, 98693 Ilmenau, Germany.|‡Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie, 14109 Berlin, Germany.
authors.forename: Sebastian
authors.initials: S
authors.lastname: Brückner
authors.affiliation: †Institut für Physik, Technische Universität Ilmenau, 98693 Ilmenau, Germany.|‡Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie, 14109 Berlin, Germany.
authors.forename: Thomas
authors.initials: T
authors.lastname: Hannappel
keywords: III−V on silicon; heterointerfaces; optical in situ spectroscopy; photoelectron spectroscopy