title: Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer.
abstract: In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190 °C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.
authors.affiliation: Materials Science and Engineering, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: Zhenwei
authors.initials: Z
authors.lastname: Wang
authors.affiliation: Department of Physics, King Abdulaziz University, Jeddah 21589, Saudi Arabia.
authors.forename: Hala A
authors.initials: HA
authors.lastname: Al-Jawhari
authors.affiliation: Materials Science and Engineering, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: Pradipta K
authors.initials: PK
authors.lastname: Nayak
authors.affiliation: Materials Science and Engineering, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: J A
authors.initials: JA
authors.lastname: Caraveo-Frescas
authors.affiliation: Materials Science and Engineering, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: Nini
authors.initials: N
authors.lastname: Wei
authors.affiliation: Materials Science and Engineering, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: M N
authors.initials: MN
authors.lastname: Hedhili
authors.affiliation: Materials Science and Engineering, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: H N
authors.initials: HN
authors.lastname: Alshareef