title: Electrically configurable graphene field-effect transistors with a graded-potential gate.
abstract: A device architecture for electrically configurable graphene field-effect transistor (GFET) using a graded-potential gate is present. The gating scheme enables a linearly varying electric field that modulates the electronic structure of graphene and causes a continuous shift of the Dirac points along the channel of GFET. This spatially varying electrostatic modulation produces a pseudobandgap observed as a suppressed conductance of graphene within a controllable energy range. By tuning the electrical gradient of the gate, a GFET device is reversibly transformed between ambipolar and n- and p-type unipolar characteristics. We further demonstrate an electrically programmable complementary inverter, showing the extensibility of the proposed architecture in constructing logic devices based on graphene and other Dirac materials. The electrical configurable GFET might be explored for novel functionalities in smart electronics.
authors.affiliation: †Key Laboratory of Standardization and Measurement for Nanotechnology, The Chinese Academy of Sciences, Beijing 100190, China.|‡National Center for Nanoscience and Technology, Beijing 100190, China.
authors.forename: Xiaowei
authors.initials: X
authors.lastname: Wang
authors.affiliation: †Key Laboratory of Standardization and Measurement for Nanotechnology, The Chinese Academy of Sciences, Beijing 100190, China.|‡National Center for Nanoscience and Technology, Beijing 100190, China.
authors.forename: Xingbin
authors.initials: X
authors.lastname: Jiang
authors.affiliation: †Key Laboratory of Standardization and Measurement for Nanotechnology, The Chinese Academy of Sciences, Beijing 100190, China.|‡National Center for Nanoscience and Technology, Beijing 100190, China.
authors.forename: Ting
authors.initials: T
authors.lastname: Wang
authors.affiliation: †Key Laboratory of Standardization and Measurement for Nanotechnology, The Chinese Academy of Sciences, Beijing 100190, China.|‡National Center for Nanoscience and Technology, Beijing 100190, China.
authors.forename: Jia
authors.initials: J
authors.lastname: Shi
authors.affiliation: †Key Laboratory of Standardization and Measurement for Nanotechnology, The Chinese Academy of Sciences, Beijing 100190, China.|‡National Center for Nanoscience and Technology, Beijing 100190, China.
authors.forename: Mingju
authors.initials: M
authors.lastname: Liu
authors.affiliation: †Key Laboratory of Standardization and Measurement for Nanotechnology, The Chinese Academy of Sciences, Beijing 100190, China.|‡National Center for Nanoscience and Technology, Beijing 100190, China.
authors.forename: Qibin
authors.initials: Q
authors.lastname: Zeng
authors.affiliation: †Key Laboratory of Standardization and Measurement for Nanotechnology, The Chinese Academy of Sciences, Beijing 100190, China.|‡National Center for Nanoscience and Technology, Beijing 100190, China.
authors.forename: Zhihai
authors.initials: Z
authors.lastname: Cheng
authors.affiliation: †Key Laboratory of Standardization and Measurement for Nanotechnology, The Chinese Academy of Sciences, Beijing 100190, China.|‡National Center for Nanoscience and Technology, Beijing 100190, China.
authors.forename: Xiaohui
authors.initials: X
authors.lastname: Qiu
keywords: Graphene; electrically configurable devices; field-effect transistor; graded-potential gate; suppressed conductance