title: High-performance n-MoS2/i-SiO2/p-Si heterojunction solar cells.
abstract: A solar cell based on the n-MoS2/i-SiO2/p-Si heterojunction is fabricated. The device exhibits a high power-conversion efficiency of 4.5% due to the incorporation of a nano-scale SiO2 buffer into the MoS2/Si interface. The present device architectures are envisaged as potentially valuable candidates for high-performance photovoltaic devices.
authors.affiliation: College of Science, China University of Petroleum, Qingdao, Shandong 266580, People's Republic of China. haolanzhong@upc.edu.cn.
authors.forename: L Z
authors.initials: LZ
authors.lastname: Hao
authors.forename: W
authors.initials: W
authors.lastname: Gao
authors.forename: Y J
authors.initials: YJ
authors.lastname: Liu
authors.forename: Z D
authors.initials: ZD
authors.lastname: Han
authors.forename: Q Z
authors.initials: QZ
authors.lastname: Xue
authors.forename: W Y
authors.initials: WY
authors.lastname: Guo
authors.forename: J
authors.initials: J
authors.lastname: Zhu
authors.forename: Y R
authors.initials: YR
authors.lastname: Li