title: Platinum-Enhanced Electron Transfer and Surface Passivation through Ultrathin Film Aluminum Oxide (Al₂O₃) on Si(111)-CH₃ Photoelectrodes.
abstract: We report the preparation, stability, and utility of Si(111)-CH3 photoelectrodes protected with thin films of aluminum oxide (Al2O3) prepared by atomic layer deposition (ALD). The photoelectrodes have been characterized by X-ray photoelectron spectroscopy (XPS), photoelectrochemistry (Fc in MeCN, Fc-OH in H2O), electrochemical impedance spectroscopy (EIS), and cyclic voltammetry (CV) simulation. XPS analysis of the growing Al2O3 layer affords both the thickness, and information regarding two-dimensional versus three-dimensional mode of growth. Impedance measurements on Si(111)|CH3|Al2O3 devices reveal that the nascent films (5-30 Å) exhibit significant capacitance, which is attenuated upon surpassing the bulk threshold (∼30 Å). The Al2O3 layer provides enhanced photoelectrochemical (PEC) stability evidenced by an increase in the anodic window of operation in MeCN (up to +0.5 V vs Ag) and enhanced stability in aqueous electrolyte (up to +0.2 V vs Ag). XPS analysis before and after PEC confirms the Al2O3 layer is persistent and prevents surface corrosion (SiOx). Sweep-rate dependent CVs in MeCN at varying thicknesses exhibit a trend of increasingly broad features, characteristic of slow electron transport kinetics. Simulations were modeled as slow electron transfer through a partially resistive and electroactive Al2O3 layer. Lastly, we find that the Al2O3 ultrathin film serves as a support for the ALD deposition of Pt nanoparticles (d ≈ 8 nm) that enhance electron transfer through the Al2O3 layer. Surface recombination velocity (SRV) measurements on the assembled Si(111)|CH3|Al2O3-15 device affords an S value of 4170 cm s(-1) (τ = 4.2 μs) comparable to the bare Si(111)-CH3 surface (3950 cm s(-1); τ = 4.4 μs). Overall, the results indicate that high electronic quality and low surface defect densities can be retained throughout a multistep assembly of an integrated and passivated semiconductor|thin-film|metal device.
authors.affiliation: Department of Chemistry, The University of Texas at Austin, Austin, Texas 78712, United States.
authors.forename: Hark Jin
authors.initials: HJ
authors.lastname: Kim
authors.affiliation: Department of Chemistry, The University of Texas at Austin, Austin, Texas 78712, United States.
authors.forename: Kara L
authors.initials: KL
authors.lastname: Kearney
authors.affiliation: Department of Chemistry, The University of Texas at Austin, Austin, Texas 78712, United States.
authors.forename: Luc H
authors.initials: LH
authors.lastname: Le
authors.affiliation: Department of Chemistry, The University of Texas at Austin, Austin, Texas 78712, United States.
authors.forename: Ryan T
authors.initials: RT
authors.lastname: Pekarek
authors.affiliation: Department of Chemistry, The University of Texas at Austin, Austin, Texas 78712, United States.
authors.forename: Michael J
authors.initials: MJ
authors.lastname: Rose
keywords: Al2O3 passivation; atomic layer deposition; electron transport; methyl-passivated Si(111); platinum (Pt) ALD