title: Non-Faradaic electrical impedimetric investigation of the interfacial effects of neuronal cell growth and differentiation on silicon nanowire transistors.
abstract: Silicon nanowire field-effect transistor (SiNW FET) devices have been interfaced with cells; however, their application for noninvasive, real-time monitoring of interfacial effects during cell growth and differentiation on SiNW has not been fully explored. Here, we cultured rat adrenal pheochromocytoma (PC12) cells, a type of neural progenitor cell, directly on SiNW FET devices to monitor cell adhesion during growth and morphological changes during neuronal differentiation for a period of 5-7 d. Monitoring was performed by measuring the non-Faradaic electrical impedance of the cell-SiNW FET system using a precision LCR meter. Our SiNW FET devices exhibited changes in impedance parameters during cell growth and differentiation because of the negatively charged cell membrane, seal resistance, and membrane capacitance at the cell/SiNW interface. It was observed that during both PC12 cell growth and neuronal differentiation, the impedance magnitude increased and the phase shifted to more negative values. However, impedance changes during cell growth already plateaued 3 d after seeding, while impedance changes continued until the last observation day during differentiation. Our results also indicate that the frequency shift to above 40 kHz after growth factor induction resulted from a larger coverage of cell membrane on the SiNWs due to distinctive morphological changes according to vinculin staining. Encapsulation of PC12 cells in a hydrogel scaffold resulted in a lack of trend in impedance parameters and confirmed that impedance changes were due to the cells. Moreover, cytolysis of the differentiated PC12 cells led to significant changes in impedance parameters. Equivalent electrical circuits were used to analyze the changes in impedance values during cell growth and differentiation. The technique employed in this study can provide a platform for performing investigations of growth-factor-induced progenitor cell differentiation.
authors.affiliation: †Graduate Institute of Biomedical Engineering, National Chung Hsing University, Taichung 40227, Taiwan, R.O.C.
authors.forename: Shu-Ping
authors.initials: SP
authors.lastname: Lin
authors.affiliation: †Graduate Institute of Biomedical Engineering, National Chung Hsing University, Taichung 40227, Taiwan, R.O.C.
authors.forename: Lester U
authors.initials: LU
authors.lastname: Vinzons
authors.affiliation: †Graduate Institute of Biomedical Engineering, National Chung Hsing University, Taichung 40227, Taiwan, R.O.C.
authors.forename: Yu-Shan
authors.initials: YS
authors.lastname: Kang
authors.affiliation: ‡National Nano Device Laboratories, Hsinchu 30078, Taiwan, R.O.C.
authors.forename: Tung-Yen
authors.initials: TY
authors.lastname: Lai
mesh_terms: D000818:Animals; D002454:Cell Differentiation / Q000187:drug effects*; D049109:Cell Proliferation / Q000187:drug effects; D017097:Electric Impedance; D020136:Hydrogel, Polyethylene Glycol Dimethacrylate / Q000494:pharmacology; D053770:Nanowires / Q000737:chemistry*; D009474:Neurons / Q000166:cytology* / Q000187:drug effects; D016716:PC12 Cells; D011092:Polyethylene Glycols / Q000494:pharmacology; D051381:Rats; D015203:Reproducibility of Results; D012825:Silicon / Q000494:pharmacology*; D014173:Transistors, Electronic
chemical_list: C437167:poly(ethylene glycol)diacrylate; D020136:Hydrogel, Polyethylene Glycol Dimethacrylate; D011092:Polyethylene Glycols; D012825:Silicon
keywords: cell differentiation; cell growth; field-effect transistor; non-Faradaic electrical impedance; silicon nanowire