title: Enhanced crystallinity of epitaxial graphene grown on hexagonal SiC surface with molybdenum plate capping.
abstract: The crystallinity of epitaxial graphene (EG) grown on a Hexagonal-SiC substrate is found to be enhanced greatly by capping the substrate with a molybdenum plate (Mo-plate) during vacuum annealing. The crystallinity enhancement of EG layer grown with Mo-plate capping is confirmed by the significant change of measured Raman spectra, compared to the spectra for no capping. Mo-plate capping is considered to induce heat accumulation on SiC surface by thermal radiation mirroring and raise Si partial pressure near surface by confining the sublimated Si atoms between SiC substrate and Mo-plate, which would be the essential contributors of crystallinity enhancement.
authors.affiliation: School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Han Byul
authors.initials: HB
authors.lastname: Jin
authors.affiliation: School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Youngeun
authors.initials: Y
authors.lastname: Jeon
authors.affiliation: Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Sungchul
authors.initials: S
authors.lastname: Jung
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Vijayakumar
authors.initials: V
authors.lastname: Modepalli
authors.affiliation: Quantum Optics Laboratory, Korea Atomic Energy Research Institute, Daejeon 305-353, Republic of Korea.
authors.forename: Hyun Suk
authors.initials: HS
authors.lastname: Kang
authors.affiliation: Quantum Optics Laboratory, Korea Atomic Energy Research Institute, Daejeon 305-353, Republic of Korea.
authors.forename: Byung Cheol
authors.initials: BC
authors.lastname: Lee
authors.affiliation: Department of Physics, Hallym University, Chuncheon, Gangwondo 200-702, Republic of Korea.
authors.forename: Jae-Hyeon
authors.initials: JH
authors.lastname: Ko
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Hyung-Joon
authors.initials: HJ
authors.lastname: Shin
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Jung-Woo
authors.initials: JW
authors.lastname: Yoo
authors.affiliation: School of Mechanical and Nuclear Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Sung Youb
authors.initials: SY
authors.lastname: Kim
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Soon-Yong
authors.initials: SY
authors.lastname: Kwon
authors.affiliation: Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea.
authors.forename: Daejin
authors.initials: D
authors.lastname: Eom
authors.affiliation: 1] School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea [2] Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Kibog
authors.initials: K
authors.lastname: Park