Deterministic Two-Dimensional Polymorphism Growth of Hexagonal n-Type SnS₂ and Orthorhombic p-Type SnS Crystals.
van der Waals layered materials have large crystal anisotropy and crystallize spontaneously into two-dimensional (2D) morphologies. Two-dimensional materials with hexagonal lattices are emerging 2D confined electronic systems at the limit of one or three atom thickness. Often these 2D lattices also form orthorhombic symmetries, but these materials have not been extensively investigated, mainly due to thermodynamic instability during crystal growth. Here, we show controlled polymorphic growth of 2D tin-sulfide crystals of either hexagonal SnS2 or orthorhombic SnS. Addition of H2 during the growth reaction enables selective determination of either n-type SnS2 or p-type SnS 2D crystal of dissimilar energy band gap of 2.77 eV (SnS2) or 1.26 eV (SnS) as a final product. Based on this synthetic 2D polymorphism of p-n crystals, we also demonstrate p-n heterojunctions for rectifiers and photovoltaic cells, and complementary inverters.
†Center for Artificial Low-Dimensional Electronic Systems, Institute for Basic Science (IBS), ‡Division of Advanced Materials Science, and §Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang 790-784, Korea.
Ji-Hoon
JH
Ahn
†Center for Artificial Low-Dimensional Electronic Systems, Institute for Basic Science (IBS), ‡Division of Advanced Materials Science, and §Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang 790-784, Korea.
Myoung-Jae
MJ
Lee
†Center for Artificial Low-Dimensional Electronic Systems, Institute for Basic Science (IBS), ‡Division of Advanced Materials Science, and §Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang 790-784, Korea.
Hoseok
H
Heo
†Center for Artificial Low-Dimensional Electronic Systems, Institute for Basic Science (IBS), ‡Division of Advanced Materials Science, and §Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang 790-784, Korea.
Ji Ho
JH
Sung
†Center for Artificial Low-Dimensional Electronic Systems, Institute for Basic Science (IBS), ‡Division of Advanced Materials Science, and §Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang 790-784, Korea.
Kyungwook
K
Kim
†Center for Artificial Low-Dimensional Electronic Systems, Institute for Basic Science (IBS), ‡Division of Advanced Materials Science, and §Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang 790-784, Korea.
Hyein
H
Hwang
†Center for Artificial Low-Dimensional Electronic Systems, Institute for Basic Science (IBS), ‡Division of Advanced Materials Science, and §Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang 790-784, Korea.
Moon-Ho
MH
Jo
polymorphism; tin disulfides; tin monosulfides; two-dimensional materials; van der Waals layered materials; vapor transport synthesis