Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients.
Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic applications. To realize such devices, however, it is generally required to have complex processes to make p-n or Schottky junctions. Here we report on a unidirectional propagation effect due to a self-induced compositional variation in GaAsSb nanowires (NWs). The individual GaAsSb NWs exhibit a highly reproducible rectifying behavior, where the rectifying direction is determined by the NW growth direction. Combining the results from confocal micro-Raman spectroscopy, electron microscopy, and electrical measurements, the origin of the rectifying behavior is found to be associated with a self-induced variation of the Sb and the carrier concentrations in the NW. To demonstrate the usefulness of these GaAsSb NWs for device applications, NW-based photodetectors and logic circuits have been made.
†Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway.
Junghwan
J
Huh
‡School of Physics, Konkuk University, Seoul 143-701, Korea.
Hoyeol
H
Yun
†Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway.|§CrayoNano AS, Otto Nielsens vei 12, NO-7052, Trondheim, Norway.
Dong-Chul
DC
Kim
†Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway.|§CrayoNano AS, Otto Nielsens vei 12, NO-7052, Trondheim, Norway.
A Mazid
AM
Munshi
†Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway.|§CrayoNano AS, Otto Nielsens vei 12, NO-7052, Trondheim, Norway.
Dasa L
DL
Dheeraj
∥Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491, Trondheim, Norway.
Hanne
H
Kauko
∥Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491, Trondheim, Norway.
Antonius T J
AT
van Helvoort
‡School of Physics, Konkuk University, Seoul 143-701, Korea.
SangWook
S
Lee
†Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway.
Bjørn-Ove
BO
Fimland
†Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway.
Helge
H
Weman
Self-catalyzed GaAsSb nanowires; logic circuits; molecular beam epitaxy; photodetectors; rectifying behavior; self-induced compositional variation