Force-Driven Single-Atom Manipulation on a Low-Reactive Si Surface for Tip Sharpening.
A single atomic manipulation on the delta-doped B:Si(111)-(√3x√3)R30° surface using a low temperature dynamic atomic force microscopy based on the Kolibri sensor is investigated. Through a controlled vertical displacement of the probe, a single Si adatom in order to open a vacancy is removed. It is shown that this process is completely reversible, by accurately placing a Si atom back into the vacancy site. In addition, density functional theory simulations are carried out to understand the underlying mechanism of the atomic manipulation in detail. This process also rearranges the atoms at the tip apex, which can be effectively sharpened in this way. Such sharper tips allow for a deeper look into the Si adatom vacancy site. Namely, high-resolution images of the vacancy showing subsurface Si dangling bond triplets, which surround the substitutional B dopant atom in the first bilayer, are achieved.
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-16200, Prague, Czech Republic.|Department of Physical Electronics, Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Br˘ehová 7, CZ-11519 Prague, Czech Republic.
Jan
J
Berger
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-16200, Prague, Czech Republic.
Evan J
EJ
Spadafora
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-16200, Prague, Czech Republic.
Pingo
P
Mutombo
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-16200, Prague, Czech Republic.|Graduate School of Engineering, Osaka University 2-1, Yamada-Oka, Suita, Osaka, 565-0871, Japan.
Pavel
P
Jelínek
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-16200, Prague, Czech Republic.
Martin
M
Švec
AFM; STM; functionalization; manipulation; semiconducting surfaces