Reconfigurable Boolean logic using magnetic single-electron transistors.
We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistor with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer, which induces a voltage shift on the Coulomb blockade oscillations of the MSET. We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation. Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level. Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network.
Hitachi Cambridge Laboratory, Cambridge CB3 0HE, United Kingdom.
M Fernando
MF
Gonzalez-Zalba
Cavendsih Laboratory, University of Cambridge, Cambridge, United Kingdom.
Chiara
C
Ciccarelli
Institute of Physics, The Academy of Science of the Czech Republic, v.v.i, Cukrovarnick'a 10, 162 53 Praha 6, Czech Republic.
Liviu P
LP
Zarbo
Cavendsih Laboratory, University of Cambridge, Cambridge, United Kingdom.
Andrew C
AC
Irvine
School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom.
Richard C
RC
Campion
School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom.
Bryan L
BL
Gallagher
Institute of Physics, The Academy of Science of the Czech Republic, v.v.i, Cukrovarnick'a 10, 162 53 Praha 6, Czech Republic; School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom.
Tomas
T
Jungwirth
Cavendsih Laboratory, University of Cambridge, Cambridge, United Kingdom.
Andrew J
AJ
Ferguson
Hitachi Cambridge Laboratory, Cambridge CB3 0HE, United Kingdom; Institute of Physics, The Academy of Science of the Czech Republic, v.v.i, Cukrovarnick'a 10, 162 53 Praha 6, Czech Republic.
Joerg
J
Wunderlich
D060526:Magnetic Fields; D008962:Models, Theoretical; D014173:Transistors, Electronic