Modeling and simulation of patterning diblock copolymers through nanoimprint lithography.
As the pattern size is cross to virus and molecular sizes, the fabrication cost becomes important. Advantages of the block copolymer lithography (BCPL) through the nanoimprint lithography (NIL) are no diffraction limits, simple and cheap process, and complementary for each of major draw- backs. In this paper, the directed self-assembly lithography of BCP with NIL is successfully modeled and simulated by using the Navier-Stokes equation for the BCP filling process, the multi-thin layer method and the Dill's equation for the UV exposure process, and the self-consistent field theory (SCFT) for the self-assemble process. The impact of the simulation parameters on the pattern formation is discussed and analyzed by using the response surface methodology (RSM).
Sang-Kon
SK
Kim