Atomic healing of defects in transition metal dichalcogenides.
As-grown transition metal dichalcogenides are usually chalcogen deficient and therefore contain a high density of chalcogen vacancies, deep electron traps which can act as charged scattering centers, reducing the electron mobility. However, we show that chalcogen vacancies can be effectively passivated by oxygen, healing the electronic structure of the material. We proposed that this can be achieved by means of surface laser modification and demonstrate the efficiency of this processing technique, which can enhance the conductivity of monolayer WSe2 by ∼400 times and its photoconductivity by ∼150 times.
†Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542.
Junpeng
J
Lu
‡Center For Advanced 2D Materials and Graphene Research Center, National University of Singapore, 6 Science Drive 2, Singapore 117546.
Alexandra
A
Carvalho
†Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542.
Xinhui Kim
XK
Chan
§Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602.
Hongwei
H
Liu
‡Center For Advanced 2D Materials and Graphene Research Center, National University of Singapore, 6 Science Drive 2, Singapore 117546.
Bo
B
Liu
†Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542.
Eng Soon
ES
Tok
‡Center For Advanced 2D Materials and Graphene Research Center, National University of Singapore, 6 Science Drive 2, Singapore 117546.|∥Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543.
Kian Ping
KP
Loh
†Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542.|‡Center For Advanced 2D Materials and Graphene Research Center, National University of Singapore, 6 Science Drive 2, Singapore 117546.
A H
AH
Castro Neto
†Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542.|‡Center For Advanced 2D Materials and Graphene Research Center, National University of Singapore, 6 Science Drive 2, Singapore 117546.
Chorng Haur
CH
Sow
Laser; electronics and optoelectronics; localized patterning; oxygen; transition metal dichalcogenides; vacancy