Thermoelectric Properties of Nanowires with a Graphitic Shell.
A thermoelectric device that can generate electricity from waste heat can play an important role in a global energy solution. However, the strongly correlated thermoelectric properties have remained a major hurdle for the highly efficient conversion of thermoelectric energy. Herein, the electrical and thermal properties of Si and SiO2 nanowires with few-layer graphitic shells are demonstrated; these structures exhibit enhanced electrical properties but no increase in thermal conductivity. The main path of the phonons through the structures is the core nanowire, which has a large cross-sectional area relative to that of the graphitic shell layer. However, the electrical conductivities of the nanowires with shell structures are high because of the good electrical conductivity of the graphitic shell, despite its small cross-sectional area.
SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, 440-746 (Korea).|Research Center for Time-Domain Nano-Functional Devices, Samsung Advanced Institute of Technology, Youngtong-gu, Suwon-si, 443-803 (Korea).
Jong Woon
JW
Lee
Computer Aided Engineering Group, Samsung Advanced Institute of Technology, Samsung Electronics, Youngtong-gu, Suwon-si, 443-803 (Korea).
Eun Kyung
EK
Lee
Department of Engineering Science, University of Oxford (UK).
Byung Sung
BS
Kim
SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, 440-746 (Korea).|Research Center for Time-Domain Nano-Functional Devices, Samsung Advanced Institute of Technology, Youngtong-gu, Suwon-si, 443-803 (Korea).
Jae Hyun
JH
Lee
Analytical Engineering Group, Samsung Advanced Institute of Technology, Samsung Electronics, Youngtong-gu, Suwon-si, 443-803 (Korea).
Hee Goo
HG
Kim
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea).|Research Center for Time-Domain Nano-Functional Devices, Samsung Advanced Institute of Technology, Youngtong-gu, Suwon-si, 443-803 (Korea).
Hyeon Sik
HS
Jang
Research Center for Time-Domain Nano-Functional Devices, Samsung Advanced Institute of Technology, Youngtong-gu, Suwon-si, 443-803 (Korea).
Sung Woo
SW
Hwang
Nano Electronics Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics, Youngtong-gu, Suwon-si, 443-803 (Korea). choibl@samsung.com.
Byoung Lyong
BL
Choi
SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, 440-746 (Korea). dwhang@skku.edu.|School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea). dwhang@skku.edu.|Research Center for Time-Domain Nano-Functional Devices, Samsung Advanced Institute of Technology, Youngtong-gu, Suwon-si, 443-803 (Korea). dwhang@skku.edu.
Dongmok
D
Whang
D004553:Electric Conductivity; D011211:Electric Power Supplies; D006108:Graphite / Q000737:chemistry*; D006358:Hot Temperature; D053770:Nanowires / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry
D012822:Silicon Dioxide; D006108:Graphite; D012825:Silicon
conducting materials; core-shell structure; graphitic layer; nanostructures; thermal conductivity