High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties.
For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.
1] Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea [2] Department of Chemistry, Sogang University, Seoul 121-742, Korea.
Da-Young
DY
Yeom
Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea.
Woojin
W
Jeon
1] Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea [2] Nano-Materials and Engineering, Korea University of Science and Technology (UST), Dae-Jeon, Korea.
Nguyen Dien Kha
ND
Tu
Interface Control Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea.
So Young
SY
Yeo
1] Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea [2] KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-701, Korea.
Sang-Soo
SS
Lee
Department of Chemistry, Sogang University, Seoul 121-742, Korea.
Bong June
BJ
Sung
Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea.
Hyejung
H
Chang
1] Nano-Materials and Engineering, Korea University of Science and Technology (UST), Dae-Jeon, Korea [2] Interface Control Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea.
Jung Ah
JA
Lim
1] Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea [2] Nano-Materials and Engineering, Korea University of Science and Technology (UST), Dae-Jeon, Korea.
Heesuk
H
Kim