Electrochemical vapor deposition of semiconductors from gas phase with a solid membrane cell.
We demonstrate the feasibility of semiconductor deposition via the electrochemical reduction of gaseous precursors by the use of an anhydrous proton-conducting membrane, the solid acid CsHSO4, at 165 °C. This membrane electrode assembly was operated within the oxidation of hydrogen on a porous Pt anode and the deposition of Si or Ge under bias at the cathode from chloride-based gaseous precursors; SiCl4 and GeCl4 in an Ar flow with a reduction potential over -1.0 V (vs RHE).
Center for Electrochemistry, Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712, United States.
Sung Ki
SK
Cho
Center for Electrochemistry, Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712, United States.
Fu-Ren F
FR
Fan
Center for Electrochemistry, Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712, United States.
Allen J
AJ
Bard