Mechanism of the defect formation in supported graphene by energetic heavy ion irradiation: the substrate effect.
Although ion beam technology has frequently been used for introducing defects in graphene, the associated key mechanism of the defect formation under ion irradiation is still largely unclear. We report a systematic study of the ion irradiation experiments on SiO2-supported graphene, and quantitatively compare the experimental results with molecular dynamic simulations. We find that the substrate is, in fact, of great importance in the defect formation process, as the defects in graphene are mostly generated through an indirect process by the sputtered atoms from the substrate.
State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, P. R. China.
Weisen
W
Li
Peking University Shenzhen Graduate School, Shenzhen 518055, P. R. China.
Xinwei
X
Wang
State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, P. R. China.
Xitong
X
Zhang
State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, P. R. China.
Shijun
S
Zhao
State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Aerospace Engineering, College of Engineering, Peking University, Beijing 100871, P.R. China.
Huiling
H
Duan
1] State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, P. R. China [2] Center for Applied Physics and Technology, Peking University, Beijing 100871, P. R. China.
Jianming
J
Xue