Diffusion control of an ion by another in LiNbO3 and LiTaO3 crystals.
Diffusion-doping is an effective, practical method to improve material properties and widen material application. Here, we demonstrate a new physical phenomenon: diffusion control of an ion by another in LiNbO3 and LiTaO3 crystals. We exemplify Ti(4+)/X(n+) (X(n+) = Sc(3+), Zr(4+), Er(3+)) co-diffusion in the widely studied LiNbO3 and LiTaO3 crystals. Some Ti(4+)/X(n+)-co-doped LiNbO3 and LiTaO3 plates were prepared by co-diffusion of stacked Ti-metal and Er-metal (Sc2O3 or ZrO2) films coated onto LiNbO3 or LiTaO3 substrates. The Ti(4+)/X(n+)-co-diffusion characteristics were studied by secondary ion mass spectrometry. In the X(n+)-only diffusion case, the X(n+) diffuses considerably slower than the Ti(4+). In the Ti(4+)/X(n+) co-diffusion case, the faster Ti(4+) controls the diffusion of the slower X(n+). The X(n+) diffusivity increases linearly with the initial Ti-metal thickness and the increase depends on the X(n+) species. The phenomenon is ascribed to the generation of additional defects induced by the diffusion of faster Ti(4+) ions, which favors and assists the subsequent diffusion of slower X(n+) ion. For the diffusion system studied here, it can be utilized to substantially shorten device fabrication period, improve device performance and produce new materials.
1] Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China [2] Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin, 300072, People's Republic of China [3] Department of Electronic Engineering and State Key Laboratory of Millimeter Waves, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, People's Republic of China.
De-Long
DL
Zhang
1] Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China [2] Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin, 300072, People's Republic of China.
Qun
Q
Zhang
1] Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China [2] Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin, 300072, People's Republic of China.
Cong-Xian
CX
Qiu
1] Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China [2] Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin, 300072, People's Republic of China [3] Department of Electronic Engineering and State Key Laboratory of Millimeter Waves, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, People's Republic of China.
Wing-Han
WH
Wong
1] Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China [2] Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin, 300072, People's Republic of China.
Dao-Yin
DY
Yu
Department of Electronic Engineering and State Key Laboratory of Millimeter Waves, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, People's Republic of China.
Edwin
E
Yue-Bun Pun