Electronic Transport Properties of Epitaxial Si/SiGe Heterostructures Grown on Single-Crystal SiGe Nanomembranes.
To assess possible improvements in the electronic performance of two-dimensional electron gases (2DEGs) in silicon, SiGe/Si/SiGe heterostructures are grown on fully elastically relaxed single-crystal SiGe nanomembranes produced through a strain engineering approach. This procedure eliminates the formation of dislocations in the heterostructure. Top-gated Hall bar devices are fabricated to enable magnetoresistivity and Hall effect measurements. Both Shubnikov-de Haas oscillations and the quantum Hall effect are observed at low temperatures, demonstrating the formation of high-quality 2DEGs. Values of charge carrier mobility as a function of carrier density extracted from these measurements are at least as high or higher than those obtained from companion measurements made on heterostructures grown on conventional strain graded substrates. In all samples, impurity scattering appears to limit the mobility.
University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
Yize Stephanie
YS
Li
University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
Pornsatit
P
Sookchoo
University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
Xiaorui
X
Cui
University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
Robert
R
Mohr
University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
Donald E
DE
Savage
University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
Ryan H
RH
Foote
University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
R B
RB
Jacobson
University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
José R
JR
Sánchez-Pérez
University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
Deborah M
DM
Paskiewicz
University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
Xian
X
Wu
University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
Dan R
DR
Ward
University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
Susan N
SN
Coppersmith
University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
Mark A
MA
Eriksson
University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
Max G
MG
Lagally
Shubnikov-de Haas oscillations; Si quantum well; SiGe nanomembrane; mobility; quantum Hall effect; two-dimensional electron gas