Influence of Exciton Localization on the Emission and Ultraviolet Photoresponse of ZnO/ZnS Core-Shell Nanowires.
The structural and optical properties of ZnO and ZnO/ZnS core-shell nanowires grown by a wet chemical method are investigated. The near-bandgap ultraviolet (UV) emission of the ZnO nanowires was enhanced by four times after coating with ZnS. The enhanced emission was attributed to surface passivation of the ZnO nanowires and localized states introduced during ZnS growth. The emission of the ZnO and ZnO/ZnS core-shell nanowires was attributed to neutral donor-bound excitons and localized excitons, respectively. Localized states prevented excitons from diffusing to nonradiative recombination centers, so therefore contributed to the enhanced emission. Emission from the localized exciton was not sensitive to temperature, so emission from the ZnO/ZnS core-shell nanowires was more stable at higher temperature. UV photodetectors based on the ZnO and ZnO/ZnS core-shell nanowires were fabricated. Under UV excitation, the device based on the ZnO/ZnS core-shell nanowires exhibited a photocurrent approximately 40 times higher than that of the device based on the ZnO nanowires. The differing photoresponse of the detectors was consistent with the existence of surface passivation and localized states. This study provides a means for modifying the optical properties of ZnO materials, and demonstrates the potential of ZnO/ZnS core-shell nanowires in UV excitonic emission and detection.
†State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China.
Xuan
X
Fang
†State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China.
Zhipeng
Z
Wei
‡Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055, People's Republic of China.
Rui
R
Chen
†State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China.
Jilong
J
Tang
§Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China.
Haifeng
H
Zhao
§Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China.
Ligong
L
Zhang
§Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China.
Dongxu
D
Zhao
†State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China.
Dan
D
Fang
†State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China.
Jinhua
J
Li
†State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China.
Fang
F
Fang
†State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China.
Xueying
X
Chu
†State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China.
Xiaohua
X
Wang
core−shell structure; exciton localization; photocurrent; photoluminescence; surface passivation