Intrinsic Electron Mobility Exceeding 10³ cm²/(V s) in Multilayer InSe FETs.
Graphene-like two-dimensional (2D) materials not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also hold promises for device miniaturization down to atomic thickness. As one material belonging to this category, InSe, a III-VI semiconductor, not only is a promising candidate for optoelectronic devices but also has potential for ultrathin field effect transistor (FET) with high mobility transport. In this work, various substrates such as PMMA, bare silicon oxide, passivated silicon oxide, and silicon nitride were used to fabricate multilayer InSe FET devices. Through back gating and Hall measurement in four-probe configuration, the device's field effect mobility and intrinsic Hall mobility were extracted at various temperatures to study the material's intrinsic transport behavior and the effect of dielectric substrate. The sample's field effect and Hall mobilities over the range of 20-300 K fall in the range of 0.1-2.0 × 10(3) cm(2)/(V s), which are comparable or better than the state of the art FETs made of widely studied 2D transition metal dichalcogenides.
†Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio 44106, United States.
Sukrit
S
Sucharitakul
†Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio 44106, United States.
Nicholas J
NJ
Goble
⊥Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
U Rajesh
UR
Kumar
∥Institute of Physics, Academia Sinica, Taipei 11529, Taiwan.
Raman
R
Sankar
¶Solon High School, 33600 Inwood Dr, Solon, Ohio 44139, United States.
Zachary A
ZA
Bogorad
Fang-Cheng
FC
Chou
⊥Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
Yit-Tsong
YT
Chen
†Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio 44106, United States.
Xuan P A
XP
Gao
2D material; FET; Hall effect; InSe; mobility; thin film