Electronic properties of epitaxial silicene on diboride thin films.
The Si counterpart of graphene—silicene—has partially similar but also unique electronic properties that relate to the presence of an extended π electronic system, the flexible crystal structure and the large spin-orbit coupling. Driven by predictions for exceptional electronic properties like the presence of massless charge carriers, the occurrence of the quantum Hall effect and perfect spin-filtering in free-standing, unreconstructed silicene, the recent experimental realization of largely sp(2)-hybridized, Si honeycomb lattices grown on a number of metallic substrates provided the opportunity for the systematic study of the electronic properties of epitaxial silicene phases. Following a discussion of theoretical predictions for free-standing silicene, we review properties of (√3 × √3)-reconstructed, epitaxial silicene phases but with the emphasis on the extensively studied case of silicene on ZrB2(0 0 0 1) thin films. As the experimental results show, the structural and electronic properties are highly interlinked and leave their fingerprint on the chemical states of individual Si atoms as revealed in core-level photoelectron spectra as well as in the valence electronic structure and low-energy interband transitions. With the critical role of substrates and of the chemical stability of epitaxial silicene highlighted, finally, benefits and challenges for any future silicene-based nanoelectronics are being put into perspective.
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1, Asahidai, Nomi, Ishikawa 923-1292, Japan.
Rainer
R
Friedlein
Yukiko
Y
Yamada-Takamura