Enhanced Resonant Tunneling in Symmetric 2D Semiconductor Vertical Heterostructure Transistors.
Tunneling transistors with negative differential resistance have widespread appeal for both digital and analog electronics. However, most attempts to demonstrate resonant tunneling devices, including graphene-insulator-graphene structures, have resulted in low peak-to-valley ratios, limiting their application. We theoretically demonstrate that vertical heterostructures consisting of two identical monolayer 2D transition-metal dichalcogenide semiconductor electrodes and a hexagonal boron nitride barrier result in a peak-to-valley ratio several orders of magnitude higher than the best that can be achieved using graphene electrodes. The peak-to-valley ratio is large even at coherence lengths on the order of a few nanometers, making these devices appealing for nanoscale electronics.
†School of Materials Science and Engineering and ‡Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
Philip M
PM
Campbell
†School of Materials Science and Engineering and ‡Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
Alexey
A
Tarasov
†School of Materials Science and Engineering and ‡Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
Corey A
CA
Joiner
†School of Materials Science and Engineering and ‡Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
William J
WJ
Ready
†School of Materials Science and Engineering and ‡Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
Eric M
EM
Vogel
2D materials; graphene; heterostructures; molybdenum disulfide; negative differential resistance; resonance; tunneling