Single-pass UV generation at 222.5 nm based on high-power GaN external cavity diode laser.
We demonstrate a compact system for single-pass frequency doubling of high-power GaN diode laser radiation. The deep UV laser light at 222.5 nm is generated in a β-BaB2O4 (BBO) crystal. A high-power GaN external cavity diode laser (ECDL) system in Littrow configuration with narrowband emission at 445 nm is used as pump source. At a pump power of 680 mW, a maximum UV power of 16 μW in continuous-wave operation at 222.5 nm is achieved. This concept enables a compact diode laser-based system emitting in the deep ultraviolet spectral range.
N
N
Ruhnke
A
A
Müller
B
B
Eppich
R
R
Güther
M
M
Maiwald
B
B
Sumpf
G
G
Erbert
G
G
Tränkle