title: Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.
abstract: Semiconducting two-dimensional transition metal dichalcogenides are emerging as top candidates for post-silicon electronics. While most of them exhibit isotropic behaviour, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here we present atomically thin rhenium disulfide (ReS2) flakes with unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated monolayer and few-layer ReS2 field-effect transistors, which exhibit competitive performance with large current on/off ratios (∼10(7)) and low subthreshold swings (100 mV per decade). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known two-dimensional semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS2 anisotropic field-effect transistors, suggesting the promising implementation of large-scale two-dimensional logic circuits. Our results underscore the unique properties of two-dimensional semiconducting materials with low crystal symmetry for future electronic applications.
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Erfu
authors.initials: E
authors.lastname: Liu
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Yajun
authors.initials: Y
authors.lastname: Fu
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Yaojia
authors.initials: Y
authors.lastname: Wang
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Yanqing
authors.initials: Y
authors.lastname: Feng
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Huimei
authors.initials: H
authors.lastname: Liu
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Xiangang
authors.initials: X
authors.lastname: Wan
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Zhou
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Baigeng
authors.initials: B
authors.lastname: Wang
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Lubin
authors.initials: L
authors.lastname: Shao
authors.affiliation: Graduate School of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan.
authors.forename: Ching-Hwa
authors.initials: CH
authors.lastname: Ho
authors.affiliation: Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan.
authors.forename: Ying-Sheng
authors.identifier: http://orcid.org/0000-0002-4099-0673
authors.initials: YS
authors.lastname: Huang
authors.affiliation: Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China.
authors.forename: Zhengyi
authors.initials: Z
authors.lastname: Cao
authors.affiliation: Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China.
authors.forename: Laiguo
authors.initials: L
authors.lastname: Wang
authors.affiliation: Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China.
authors.forename: Aidong
authors.initials: A
authors.lastname: Li
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Junwen
authors.initials: J
authors.lastname: Zeng
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Fengqi
authors.initials: F
authors.lastname: Song
authors.affiliation: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
authors.forename: Xinran
authors.initials: X
authors.lastname: Wang
authors.affiliation: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
authors.forename: Yi
authors.initials: Y
authors.lastname: Shi
authors.affiliation: Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.|Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
authors.forename: Hongtao
authors.initials: H
authors.lastname: Yuan
authors.affiliation: Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.|Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
authors.forename: Harold Y
authors.initials: HY
authors.lastname: Hwang
authors.affiliation: Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.|Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
authors.forename: Yi
authors.initials: Y
authors.lastname: Cui
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Feng
authors.identifier: http://orcid.org/0000-0002-0962-5424
authors.initials: F
authors.lastname: Miao
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Dingyu
authors.initials: D
authors.lastname: Xing