title: Atom probe tomography of a Ti-Si-Al-C-N coating grown on a cemented carbide substrate.
abstract: The elemental distribution within a Ti-Si-Al-C-N coating grown by physical vapour deposition on a Cr-doped WC-Co cemented carbide substrate has been investigated by atom probe tomography. Special attention was paid to the coating/substrate interface region. The results indicated a diffusion of substrate binder phase elements into the Ti-N adhesion layer. The composition of this layer, and the Ti-Al-N interlayer present between the adhesion layer and the main Ti-Si-Al-C-N layer, appeared to be sub-stoichiometric. The analysis of the interlayer showed the presence of internal surfaces, possibly grain boundaries, depleted in Al. The composition of the main Ti-Al-Si-C-N layer varied periodically in the growth direction; layers enriched in Ti appeared with a periodicity of around 30 nm. Laser pulsing resulted in a good mass resolution that made it possible to distinguish between N(+) and Si(2+) at 14 Da.
authors.affiliation: Department of Applied Physics, Chalmers University of Technology, SE 412 96 Göteborg, Sweden.
authors.forename: M
authors.initials: M
authors.lastname: Thuvander
authors.affiliation: Department of Applied Physics, Chalmers University of Technology, SE 412 96 Göteborg, Sweden.
authors.forename: G
authors.initials: G
authors.lastname: Östberg
authors.affiliation: Sandvik Coromant, SE 126 80 Stockholm, Sweden.
authors.forename: M
authors.initials: M
authors.lastname: Ahlgren
authors.affiliation: Department of Applied Physics, Chalmers University of Technology, SE 412 96 Göteborg, Sweden. Electronic address: lklfalk@chalmers.se.
authors.forename: L K L
authors.initials: LK
authors.lastname: Falk
keywords: Atom probe tomography; Cemented carbide cutting tools; Diffusion; Nitrides; Physical vapour deposition