title: Active graphene-silicon hybrid diode for terahertz waves.
abstract: Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.
authors.affiliation: 1] Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University and the Key Laboratory of Optoelectronics Information and Technology (Ministry of Education), Tianjin 300072, China [2] School of Electrical and Computer Engineering, Oklahoma State University, Stillwater, Oklahoma 74078, USA.
authors.forename: Quan
authors.initials: Q
authors.lastname: Li
authors.affiliation: Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University and the Key Laboratory of Optoelectronics Information and Technology (Ministry of Education), Tianjin 300072, China.
authors.forename: Zhen
authors.initials: Z
authors.lastname: Tian
authors.affiliation: Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University and the Key Laboratory of Optoelectronics Information and Technology (Ministry of Education), Tianjin 300072, China.
authors.forename: Xueqian
authors.initials: X
authors.lastname: Zhang
authors.affiliation: Division of Physics and Applied Physics, Center for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
authors.forename: Ranjan
authors.initials: R
authors.lastname: Singh
authors.affiliation: Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University and the Key Laboratory of Optoelectronics Information and Technology (Ministry of Education), Tianjin 300072, China.
authors.forename: Liangliang
authors.initials: L
authors.lastname: Du
authors.affiliation: Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University and the Key Laboratory of Optoelectronics Information and Technology (Ministry of Education), Tianjin 300072, China.
authors.forename: Jianqiang
authors.initials: J
authors.lastname: Gu
authors.affiliation: Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University and the Key Laboratory of Optoelectronics Information and Technology (Ministry of Education), Tianjin 300072, China.
authors.forename: Jiaguang
authors.initials: J
authors.lastname: Han
authors.affiliation: 1] Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University and the Key Laboratory of Optoelectronics Information and Technology (Ministry of Education), Tianjin 300072, China [2] School of Electrical and Computer Engineering, Oklahoma State University, Stillwater, Oklahoma 74078, USA.
authors.forename: Weili
authors.initials: W
authors.lastname: Zhang