title: Finger-gate manipulated quantum transport in Dirac materials.
abstract: We investigate the quantum transport properties of multichannel nanoribbons made of materials described by the Dirac equation, under an in-plane magnetic field. In the low energy regime, positive and negative finger-gate potentials allow the electrons to make intra-subband transitions via hole-like or electron-like quasibound states (QBS), respectively, resulting in dips in the conductance. In the high energy regime, double dip structures in the conductance are found, attributed to spin-flip or spin-nonflip inter-subband transitions through the QBSs. Inverting the finger-gate polarity offers the possibility to manipulate the spin polarized electronic transport to achieve a controlled spin-switch.
authors.affiliation: Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan, Republic of China.
authors.forename: Ioannis
authors.initials: I
authors.lastname: Kleftogiannis
authors.forename: Chi-Shung
authors.initials: CS
authors.lastname: Tang
authors.forename: Shun-Jen
authors.initials: SJ
authors.lastname: Cheng