title: A reliable extraction method for source and drain series resistances in silicon nanowire metal-oxide-semiconductor field-effect-transistors (MOSFETs) based on radio-frequency analysis.
abstract: This paper presents a new extraction method for source and drain (S/D) series resistances of silicon nanowire (SNW) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on small-signal radio-frequency (RF) analysis. The proposed method can be applied to the extraction of S/D series resistances for SNW MOSFETs with finite off-state channel resistance as well as gate bias-dependent on-state resistive components realized by 3-dimensional (3-D) device simulation. The series resistances as a function of frequency and gate voltage are presented and compared with the results obtained by an existing method with infinite off-state channel resistance model. The accuracy of the newly proposed parameter extraction method has been successfully verified by Z22- and Y-parameters up to 100 GHz operation frequency.
authors.forename: Jae Hwa
authors.initials: JH
authors.lastname: Hwa
authors.forename: Young Jun
authors.initials: YJ
authors.lastname: Yoon
authors.forename: Hwan Gi
authors.initials: HG
authors.lastname: Lee
authors.forename: Gwan Min
authors.initials: GM
authors.lastname: Yoo
authors.forename: Eou-Sik
authors.initials: ES
authors.lastname: Cho
authors.forename: Seongjae
authors.initials: S
authors.lastname: Cho
authors.forename: Jung-Hee
authors.initials: JH
authors.lastname: Lee
authors.forename: In Man
authors.initials: IM
authors.lastname: Kang