title: Enhanced performances of diode-pumped sapphire/Er³⁺:Yb³⁺:LuAl₃(BO₃)₄/sapphire micro-laser at 1.5-1.6 μm.
abstract: A sandwich-type sapphire/Er3+:Yb3+:LuAl3(BO3)4/sapphire micro-laser was fabricated by tightly pressing two sapphire crystals and a Er3+:Yb3+:LuAl3(BO3)4 microchip together, and directly depositing cavity mirrors onto the outside surfaces of the sapphire crystals. Pumped by a continuous-wave 976 nm diode laser, a 1543 nm laser with maximum output power of 1.17 W and slope efficiency of 33% with respect to incident pump power was realized in the sandwich-type micro-laser, whereas a laser with maximum output power of 0.46 W and slope efficiency of 17% was obtained in a monolithic Er3+:Yb3+:LuAl3(BO3)4 micro-laser. Furthermore, efficient 1521 nm continuous-wave and passively Q-switched pulse lasers were also demonstrated in the sandwich-type micro-laser.
authors.forename: Yujin
authors.initials: Y
authors.lastname: Chen
authors.forename: Yanfu
authors.initials: Y
authors.lastname: Lin
authors.forename: Jianhua
authors.initials: J
authors.lastname: Huang
authors.forename: Xinghong
authors.initials: X
authors.lastname: Gong
authors.forename: Zundu
authors.initials: Z
authors.lastname: Luo
authors.forename: Yidong
authors.initials: Y
authors.lastname: Huang