title: Characterization of low temperature graphene synthesis in inductively coupled plasma chemical vapor deposition process with optical emission spectroscopy.
abstract: Low-temperature graphene was synthesized at 400 degrees C with inductively coupled plasma chemical vapor deposition (PECVD) process. The effects of plasma power and flow rate of various carbon containing precursors and hydrogen on graphene properties were investigated with optical emission spectroscopy (OES). Various radicals monitored by OES were correlated with graphene film properties such as sheet resistance, I(D)/I(G) ratio of Raman spectra and transparency. C2H2 was used as a main precursor and the increase of plasma power enhanced intensity of carbon (C2) radical OES intensity in plasma, reduced sheet resistance and increased transparency of graphene films. The reduced flow rate of C2H2 decreased sheet resistance and increased transparency of graphene films in the range of this study. H2 addition was found to increase sheet resistance, transparency and attributed to reduction of graphene grain and etching graphene layers. OES analysis showed that C2 radicals contribute to graphite networking and sheet resistance reduction. TEM and AFM were applied to provide credible information that graphene had been successfully grown at low temperature.
authors.forename: Yifei
authors.initials: Y
authors.lastname: Ma
authors.forename: Daekyoung
authors.initials: D
authors.lastname: Kim
authors.forename: Haegyu
authors.initials: H
authors.lastname: Jang
authors.forename: Sung Min
authors.initials: SM
authors.lastname: Cho
authors.forename: Heeyeop
authors.initials: H
authors.lastname: Chae
mesh_terms: D003080:Cold Temperature; D006108:Graphite / Q000138:chemical synthesis*; D018625:Microscopy, Atomic Force; D046529:Microscopy, Electron, Transmission; D058626:Plasma Gases; D013057:Spectrum Analysis / Q000379:methods*
chemical_list: D058626:Plasma Gases; D006108:Graphite