title: Study of low resistivity and high work function ITO films prepared by oxygen flow rates and N2O plasma treatment for amorphous/crystalline silicon heterojunction solar cells.
abstract: Pulsed DC magnetron sputtered indium tin oxide (ITO) films deposited on glass substrates with lowest resistivity of 2.62 x 10(-4) Ω x cm and high transmittance of about 89% in the visible wavelength region. We report the enhancement of ITO work function (Φ(ITO)) by the variation of oxygen (O2) flow rate and N2O surface plasma treatment. The Φ(ITO) increased from 4.43 to 4.56 eV with the increase in O2 flow rate from 0 to 4 sccm while surface treatment of N2O plasma further enhanced the ITO work function to 4.65 eV. The crystallinity of the ITO films improved with increasing O2 flow rate, as revealed by XRD analysis. The ITO work function was increased by the interfacial dipole resulting from the surface rich in O- ions and by the dipole moment formed at the ITO surface during N2O plasma treatment. The ITO films with high work functions can be used to modify the front barrier height in heterojunction with intrinsic thin layer (HIT) solar cells.
authors.forename: Shahzada Qamar
authors.initials: SQ
authors.lastname: Hussain
authors.forename: Woong-Kyo
authors.initials: WK
authors.lastname: Oh
authors.forename: Sunbo
authors.initials: S
authors.lastname: Kim
authors.forename: Shihyun
authors.initials: S
authors.lastname: Ahn
authors.forename: Anh Huy Tuan
authors.initials: AH
authors.lastname: Le
authors.forename: Hyeongsik
authors.initials: H
authors.lastname: Park
authors.forename: Youngseok
authors.initials: Y
authors.lastname: Lee
authors.forename: Vinh Ai
authors.initials: VA
authors.lastname: Dao
authors.forename: S
authors.initials: S
authors.lastname: Velumani
authors.forename: Junsin
authors.initials: J
authors.lastname: Yi