title: Blue inorganic light emitting diode on flexible polyimide substrate using laser lift-off process.
abstract: The fabrication process for the blue GaN inorganic light emitting diode (ILED) on flexible polyimide (PI) substrate by laser lift off (LLO) method was demonstrated. The GaN epi-structure was grown on patterned sapphire wafer. GaN samples were temporary bonded with polyimide substrate by flexible silver epoxy. Separation of the whole GaN LED film from GaN/sapphire wafer was accomplished using a single KrF excimer (248 nm) laser pulse directed through the transparent sapphire wafer. Device fabrication was carried out on both rigid silicon and flexible polyimide substrate, and I-V performance for both devices was measured. The optimized LLO process for the whole GaN LED film transfer would be applicable in flexible LED applications without compromising electrical properties.
authors.forename: Nilesh
authors.initials: N
authors.lastname: Barange
authors.forename: Young Dong
authors.initials: YD
authors.lastname: Kim
authors.forename: Hyungduk
authors.initials: H
authors.lastname: Ko
authors.forename: Joon-Suh
authors.initials: JS
authors.lastname: Park
authors.forename: Byoungnam
authors.initials: B
authors.lastname: Park
authors.forename: Doo-Hyun
authors.initials: DH
authors.lastname: Ko
authors.forename: Ii Ki
authors.initials: IK
authors.lastname: Han
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry; D005708:Gallium / Q000737:chemistry; D007094:Imides / Q000737:chemistry*; D007834:Lasers; D008027:Light; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry*; D012666:Semiconductors; D013499:Surface Properties
chemical_list: D007094:Imides; C473348:gallium nitride; D005708:Gallium; D000537:Aluminum Oxide