title: Writing and erasing mechanisms of stable nonvolatile memory devices based on SnO2 nanoparticle/polystyrene nanocomposites.
abstract: X-ray photoelectron spectroscopy spectra and transmission electron microscopy images showed that SnO2 nanoparticles were randomly distributed in the polystyrene (PS) layer. Capacitance-voltage (C-V) measurements on the Al/SnO, nanoparticles embedded in PS layer/p-Si devices at 300 K showed a clockwise hysteresis with a large flatband voltage shift due to the existence of SnO2 nanoparticles. Capacitance-time measurements showed that the devices exhibited excellent memory retention characteristics at ambient conditions. The writing and the erasing mechanisms for the Al/SnO, nanoparticles embedded in PS layer/p-Si devices are described on the basis of the C-V results and energy band diagrams.
authors.forename: Dong Yeol
authors.initials: DY
authors.lastname: Yun
authors.forename: Hun Min
authors.initials: HM
authors.lastname: Park
authors.forename: Tae Whan
authors.initials: TW
authors.lastname: Kim
mesh_terms: D046529:Microscopy, Electron, Transmission; D053761:Nanocomposites; D053758:Nanoparticles; D056951:Photoelectron Spectroscopy; D011137:Polystyrenes / Q000737:chemistry*; D017971:Tin Compounds / Q000737:chemistry*; D014835:Volatilization
chemical_list: D011137:Polystyrenes; D017971:Tin Compounds; C045358:stannic oxide