title: Increasing single mode power of 1.3-μm VCSELs by output coupling optimization.
abstract: We report on the single mode emission power enhancement of 1.3-μm VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of 6.8-mW at room temperature and 2.8-mW at 80°C, with more than 30 dB single mode suppression ratio, have been obtained.
authors.forename: A
authors.initials: A
authors.lastname: Mereuta
authors.forename: A
authors.initials: A
authors.lastname: Caliman
authors.forename: A
authors.initials: A
authors.lastname: Sirbu
authors.forename: V
authors.initials: V
authors.lastname: Iakovlev
authors.forename: Z
authors.initials: Z
authors.lastname: Mickovic
authors.forename: G
authors.initials: G
authors.lastname: Suruceanu
authors.forename: E
authors.initials: E
authors.lastname: Kapon