title: Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory competing with multilevel NAND flash.
abstract: Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long-term reliability, and only an electronic switching mechanism, without an ionic-motion-related mechanism.
authors.affiliation: Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 151-744, Korea.
authors.forename: Jung Ho
authors.initials: JH
authors.lastname: Yoon
authors.affiliation: Hewlett-Packard Laboratories, Hewlett-Packard Company, Palo Alto, CA, 94304, USA.
authors.forename: Kyung Min
authors.initials: KM
authors.lastname: Kim
authors.affiliation: Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 151-744, Korea.
authors.forename: Seul Ji
authors.initials: SJ
authors.lastname: Song
authors.affiliation: Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 151-744, Korea.
authors.forename: Jun Yeong
authors.initials: JY
authors.lastname: Seok
authors.affiliation: Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 151-744, Korea.
authors.forename: Kyung Jean
authors.initials: KJ
authors.lastname: Yoon
authors.affiliation: Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 151-744, Korea.
authors.forename: Dae Eun
authors.initials: DE
authors.lastname: Kwon
authors.affiliation: Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 151-744, Korea.
authors.forename: Tae Hyung
authors.initials: TH
authors.lastname: Park
authors.affiliation: Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 151-744, Korea.
authors.forename: Young Jae
authors.initials: YJ
authors.lastname: Kwon
authors.affiliation: Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 151-744, Korea.
authors.forename: Xinglong
authors.initials: X
authors.lastname: Shao
authors.affiliation: Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 151-744, Korea.
authors.forename: Cheol Seong
authors.initials: CS
authors.lastname: Hwang
keywords: electroforming-free; multilevel switching; resistive switching memory; self-rectifying; uniformity