title: Perovskite-fullerene hybrid materials suppress hysteresis in planar diodes.
abstract: Solution-processed planar perovskite devices are highly desirable in a wide variety of optoelectronic applications; however, they are prone to hysteresis and current instabilities. Here we report the first perovskite-PCBM hybrid solid with significantly reduced hysteresis and recombination loss achieved in a single step. This new material displays an efficient electrically coupled microstructure: PCBM is homogeneously distributed throughout the film at perovskite grain boundaries. The PCBM passivates the key PbI3(-) antisite defects during the perovskite self-assembly, as revealed by theory and experiment. Photoluminescence transient spectroscopy proves that the PCBM phase promotes electron extraction. We showcase this mixed material in planar solar cells that feature low hysteresis and enhanced photovoltage. Using conductive AFM studies, we reveal the memristive properties of perovskite films. We close by positing that PCBM, by tying up both halide-rich antisites and unincorporated halides, reduces electric field-induced anion migration that may give rise to hysteresis and unstable diode behaviour.
authors.affiliation: Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
authors.forename: Jixian
authors.initials: J
authors.lastname: Xu
authors.affiliation: Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
authors.forename: Andrei
authors.initials: A
authors.lastname: Buin
authors.affiliation: Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
authors.forename: Alexander H
authors.initials: AH
authors.lastname: Ip
authors.affiliation: Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
authors.forename: Wei
authors.initials: W
authors.lastname: Li
authors.affiliation: Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
authors.forename: Oleksandr
authors.initials: O
authors.lastname: Voznyy
authors.affiliation: Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
authors.forename: Riccardo
authors.identifier: 0000000210699973
authors.initials: R
authors.lastname: Comin
authors.affiliation: Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
authors.forename: Mingjian
authors.initials: M
authors.lastname: Yuan
authors.affiliation: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831, USA.
authors.forename: Seokmin
authors.initials: S
authors.lastname: Jeon
authors.affiliation: Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
authors.forename: Zhijun
authors.initials: Z
authors.lastname: Ning
authors.affiliation: Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
authors.forename: Jeffrey J
authors.initials: JJ
authors.lastname: McDowell
authors.affiliation: Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
authors.forename: Pongsakorn
authors.initials: P
authors.lastname: Kanjanaboos
authors.affiliation: Department of Physics and Atmospheric Science, Dalhousie University, Room 319, Dunn Building, Halifax, Nova Scotia B3H 4R2, Canada.
authors.forename: Jon-Paul
authors.initials: JP
authors.lastname: Sun
authors.affiliation: Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
authors.forename: Xinzheng
authors.initials: X
authors.lastname: Lan
authors.affiliation: Department of Chemistry and Nano Science, Ewha Womans University, 52, Ewhayeodae-gil, Seodaemun-gu, Seoul 120-750, Korea.
authors.forename: Li Na
authors.initials: LN
authors.lastname: Quan
authors.affiliation: Department of Chemistry and Nano Science, Ewha Womans University, 52, Ewhayeodae-gil, Seodaemun-gu, Seoul 120-750, Korea.
authors.forename: Dong Ha
authors.identifier: 0000000304440479
authors.initials: DH
authors.lastname: Kim
authors.affiliation: Department of Physics and Atmospheric Science, Dalhousie University, Room 319, Dunn Building, Halifax, Nova Scotia B3H 4R2, Canada.
authors.forename: Ian G
authors.initials: IG
authors.lastname: Hill
authors.affiliation: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831, USA.
authors.forename: Peter
authors.initials: P
authors.lastname: Maksymovych
authors.affiliation: Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
authors.forename: Edward H
authors.initials: EH
authors.lastname: Sargent