title: Germanium wrap-around photodetectors on Silicon photonics.
abstract: We present a novel waveguide coupling scheme where a germanium diode grown via rapid melt growth is wrapped around a silicon waveguide. A 4 fF PIN photodiode is demonstrated with 0.95 A/W responsivity at 1550 nm, 6 nA dark current, and nearly 9 GHz bandwidth. Devices with shorter intrinsic region exhibit higher bandwidth (30 GHz) and slightly lower responsivity (0.7 A/W). An NPN phototransistor is also demonstrated using the same design with 14 GHz f(T).
authors.forename: Ryan
authors.initials: R
authors.lastname: Going
authors.forename: Tae Joon
authors.initials: TJ
authors.lastname: Seok
authors.forename: Jodi
authors.initials: J
authors.lastname: Loo
authors.forename: Kyle
authors.initials: K
authors.lastname: Hsu
authors.forename: Ming C
authors.initials: MC
authors.lastname: Wu