title: Investigation of optical bistability in a double In(x)Ga(1-x)N/GaN quantum-dot nanostructure via inter-dot tunneling effect.
abstract: In this paper, our aim is to control optical bistability (OB) and optical multistability (OM) in a five-level system designed in a double quantum dot (QD) nanostructure. In a realistic example, this atomic system is created in two semiconductor QDs (In(x)Ga(1-x)N/GaN), owning transfer of carriers via tunneling effect. OB behavior is controlled not only by the inter-dot tunneling effect but also by variation of probe detuning and intensity of the control field. It is demonstrated that voltage-controlled detuning can significantly affect the behavior of OB and OM; therefore, the OM converts to OB by probe detuning and intensity of the control field.
authors.forename: A
authors.initials: A
authors.lastname: Soltani
authors.forename: R
authors.initials: R
authors.lastname: Nasehi
authors.forename: S H
authors.initials: SH
authors.lastname: Asadpour
authors.forename: M
authors.initials: M
authors.lastname: Mahmoudi
authors.forename: H Rahimpour
authors.initials: HR
authors.lastname: Soleimani