title: Contact-enhanced transparent silver nanowire network for all solution-based top-contact metal-oxide thin-film transistors.
abstract: In this paper, we investigate contact-enhanced transparent silver nanowire (Ag NW) network for solution-processed metal-oxide thin-film transistors (TFTs). Mechanical roll pressing was applied to a bar-coated Ag NW film to enhance the inter-nanowire connectivity. As a result, the sheet resistance of the Ag NW film was decreased from 119.5 ψ/square to 92.4 ψ/square, and more stable and enhanced TFT characteristics were achieved when the roll-pressed Ag NW was employed as source/drain electrodes. In addition, a non-acidic wet etching method was developed to pattern the Ag NW electrodes to construct top-contact geometry indium-gallium-zinc oxide TFTs. From the results, it is believed that the mechanical roll pressing and non-acidic wet etching method may be utilized in realizing all solution-based transparent metal-oxide TFTs.
authors.forename: Yong-Hoon
authors.initials: YH
authors.lastname: Kim
authors.forename: Tae-Hyoung
authors.initials: TH
authors.lastname: Kim
authors.forename: Yeji
authors.initials: Y
authors.lastname: Lee
authors.forename: Jong-Woong
authors.initials: JW
authors.lastname: Kim
authors.forename: Jaekyun
authors.initials: J
authors.lastname: Kim
authors.forename: Sung Kyu
authors.initials: SK
authors.lastname: Park