title: Low threshold Er(x)Yb(Y)(2-x)SiO(5) nanowire waveguide amplifier.
abstract: The 1.53 μm gain characteristics of ErxYb(Y)2-xSiO5nanowire and film material waveguide amplifiers have been investigated considering the upconversion effect by solving rate equations and propagation equations. The gains of ErxYb(Y)2-xSiO5nanowire waveguides have a significant enhancement compared with those of film material waveguides due to low propagation loss and long photoluminescence lifetime. The cooperative upconversion (CUC) effect plays a significant role in the simulation. The maximum 27 dB/mm gain for a 1 mm length ErxYb(Y)2-xSiO5nanowire waveguide was obtained without CUC, and only about 2 dB/mm gain was obtained with CUC. However, the low thresholds of 10.7 and 0.7 mW, respectively, for the ErxY2-xSiO5and ErxYb2-xSiO5nanowire waveguides amplifiers were observed with CUC by analyzing the relation between optical gain and the Er/Yb/Y concentration, waveguide length, waveguide cross section area, energy-level lifetime, and pumping power coefficients. The low threshold is two to three orders of magnitude lower than the threshold used in thin film experiments.
authors.forename: Xingjun
authors.initials: X
authors.lastname: Wang
authors.forename: Shengming
authors.initials: S
authors.lastname: Wang
authors.forename: Zhiping
authors.initials: Z
authors.lastname: Zhou