title: Characterization of silicon-germanium epitaxial layer by photoluminescence intensity and reflectance measurement techniques.
abstract: Si(1-x)Ge(x) epitaxial layers with various Ge fractions sample were characterized by photoluminescence intensity method at room temperature. Photoluminescence intensity was affected by minority carrier lifetime, defect density, and surface condition. PL intensity profile showed misfit dislocation on epitaxial layer for 15%, 21%, 24%, and 26%, since dislocations were one of minority carrier lifetime degradation parameters. It clearly showed misfit dislocation profiles, cross-hatch, and PL intensity was low at dislocation region.
authors.forename: Dohyun
authors.initials: D
authors.lastname: Back
authors.forename: Jaehyeong
authors.initials: J
authors.lastname: Lee
mesh_terms: D005857:Germanium / Q000737:chemistry*; D049449:Luminescence; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D005857:Germanium; D012825:Silicon