title: White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids.
abstract: Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.
authors.forename: Ming-Lun
authors.initials: ML
authors.lastname: Lee
authors.forename: Yu-Hsiang
authors.initials: YH
authors.lastname: Yeh
authors.forename: Shang-Ju
authors.initials: SJ
authors.lastname: Tu
authors.forename: P C
authors.initials: PC
authors.lastname: Chen
authors.forename: Wei-Chih
authors.initials: WC
authors.lastname: Lai
authors.forename: Jinn-Kong
authors.initials: JK
authors.lastname: Sheu