title: Epitaxial growth of a single-crystal hybridized boron nitride and graphene layer on a wide-band gap semiconductor.
abstract: Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral structure, a heterogeneous 2D structure, has been fabricated on single-crystal metals or metal foils by chemical vapor deposition (CVD). However, once fabricated on metals, the h-BN/graphene lateral structures require an additional transfer process for device applications, as reported for CVD graphene grown on metal foils. Here, we demonstrate that a single-crystal h-BN/graphene lateral structure can be epitaxially grown on a wide-gap semiconductor, SiC(0001). First, a single-crystal h-BN layer with the same orientation as bulk SiC was grown on a Si-terminated SiC substrate at 850 °C using borazine molecules. Second, when heated above 1150 °C in vacuum, the h-BN layer was partially removed and, subsequently, replaced with graphene domains. Interestingly, these graphene domains possess the same orientation as the h-BN layer, resulting in a single-crystal h-BN/graphene lateral structure on a whole sample area. For temperatures above 1600 °C, the single-crystal h-BN layer was completely replaced by the single-crystal graphene layer. The crystalline structure, electronic band structure, and atomic structure of the h-BN/graphene lateral structure were studied by using low energy electron diffraction, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy, respectively. The h-BN/graphene lateral structure fabricated on a wide-gap semiconductor substrate can be directly applied to devices without a further transfer process, as reported for epitaxial graphene on a SiC substrate.
authors.affiliation: †Department of Physics, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Ha-Chul
authors.initials: HC
authors.lastname: Shin
authors.affiliation: §School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Yamujin
authors.initials: Y
authors.lastname: Jang
authors.affiliation: §School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Tae-Hoon
authors.initials: TH
authors.lastname: Kim
authors.affiliation: †Department of Physics, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Jun-Hae
authors.initials: JH
authors.lastname: Lee
authors.affiliation: †Department of Physics, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Dong-Hwa
authors.initials: DH
authors.lastname: Oh
authors.affiliation: †Department of Physics, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Sung Joon
authors.initials: SJ
authors.lastname: Ahn
authors.affiliation: ∥SAINT, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Jae Hyun
authors.initials: JH
authors.lastname: Lee
authors.affiliation: †Department of Physics, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Youngkwon
authors.initials: Y
authors.lastname: Moon
authors.affiliation: †Department of Physics, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Ji-Hoon
authors.initials: JH
authors.lastname: Park
authors.affiliation: ⊥Fuel Cell Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Republic of Korea.
authors.forename: Sung Jong
authors.initials: SJ
authors.lastname: Yoo
authors.affiliation: †Department of Physics, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Chong-Yun
authors.initials: CY
authors.lastname: Park
authors.affiliation: §School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea.|∥SAINT, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Dongmok
authors.initials: D
authors.lastname: Whang
authors.affiliation: §School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Cheol-Woong
authors.initials: CW
authors.lastname: Yang
authors.affiliation: †Department of Physics, Sungkyunkwan University, Suwon 440-746, Republic of Korea.|∥SAINT, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Joung Real
authors.initials: JR
authors.lastname: Ahn