title: Effect of Ta addition of co-sputtered amorphous tantalum indium zinc oxide thin film transistors with bias stability.
abstract: In this work, we have fabricated thin film transistors (TFTs) using amorphous tantalum indium zinc oxide (a-TaInZnO) channels by the co-sputtering process. The effects of incorporating tantalum on the InZnO material were investigated using Hall-effect measurement results, and electrical characteristics. We also found that the carrier densities of thin films and the transistor on-off currents were greatly influenced by the composition of tantalum addition. Ta ions have strong affinity to oxygen and so suppress the formation of free electron carriers inthin films; they play an important role in enhancing the electrical characteristic due to their high oxygen bonding ability. The electrical characteristics of the optimized TFTs shows a field effect mobility of 3.67 cm2 V(-1) s(-1), a threshold voltage of 1.28 V, an on/off ratio of 1.1 x 10(8), and a subthreshold swing of 480 mV/dec. Under gate bias stress conditions, the TaInZnO TFTs showed lower shift in threshold voltage shifts.
authors.forename: Dae-Ho
authors.initials: DH
authors.lastname: Son
authors.forename: Dae-Hwan
authors.initials: DH
authors.lastname: Kim
authors.forename: Si-Nae
authors.initials: SN
authors.lastname: Park
authors.forename: Shi-Joon
authors.initials: SJ
authors.lastname: Sung
authors.forename: Jin-Kyu
authors.initials: JK
authors.lastname: Kang