title: Bandgap Tuning of Silicon Quantum Dots by Surface Functionalization with Conjugated Organic Groups.
abstract: The quantum confinement and enhanced optical properties of silicon quantum dots (SiQDs) make them attractive as an inexpensive and nontoxic material for a variety of applications such as light emitting technologies (lighting, displays, sensors) and photovoltaics. However, experimental demonstration of these properties and practical application into optoelectronic devices have been limited as SiQDs are generally passivated with covalently bound insulating alkyl chains that limit charge transport. In this work, we show that strategically designed triphenylamine-based surface ligands covalently bonded to the SiQD surface using conjugated vinyl connectivity results in a 70 nm red-shifted photoluminescence relative to their decyl-capped control counterparts. This suggests that electron density from the SiQD is delocalized into the surface ligands to effectively create a larger hybrid QD with possible macroscopic charge transport properties.
authors.affiliation: †Department of Chemistry and Geochemistry, ‡Department of Physics, §Materials Science Program, ∥Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401, United States.
authors.forename: Tianlei
authors.initials: T
authors.lastname: Zhou
authors.affiliation: †Department of Chemistry and Geochemistry, ‡Department of Physics, §Materials Science Program, ∥Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401, United States.
authors.forename: Ryan T
authors.initials: RT
authors.lastname: Anderson
authors.affiliation: †Department of Chemistry and Geochemistry, ‡Department of Physics, §Materials Science Program, ∥Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401, United States.
authors.forename: Huashan
authors.initials: H
authors.lastname: Li
authors.affiliation: †Department of Chemistry and Geochemistry, ‡Department of Physics, §Materials Science Program, ∥Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401, United States.
authors.forename: Jacob
authors.initials: J
authors.lastname: Bell
authors.affiliation: †Department of Chemistry and Geochemistry, ‡Department of Physics, §Materials Science Program, ∥Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401, United States.
authors.forename: Yongan
authors.initials: Y
authors.lastname: Yang
authors.affiliation: †Department of Chemistry and Geochemistry, ‡Department of Physics, §Materials Science Program, ∥Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401, United States.
authors.forename: Brian P
authors.initials: BP
authors.lastname: Gorman
authors.affiliation: †Department of Chemistry and Geochemistry, ‡Department of Physics, §Materials Science Program, ∥Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401, United States.
authors.forename: Svitlana
authors.initials: S
authors.lastname: Pylypenko
authors.affiliation: †Department of Chemistry and Geochemistry, ‡Department of Physics, §Materials Science Program, ∥Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401, United States.
authors.forename: Mark T
authors.initials: MT
authors.lastname: Lusk
authors.affiliation: †Department of Chemistry and Geochemistry, ‡Department of Physics, §Materials Science Program, ∥Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401, United States.
authors.forename: Alan
authors.initials: A
authors.lastname: Sellinger
keywords: CT state; Si quantum dots; band gap tuning; hydrosilylation; type-II energy level aligned interface