title: Resistive switching and polarization reversal of hydrothermal-method-grown undoped zinc oxide nanorods by using scanning probe microscopy techniques.
abstract: This paper reports the localized electrical, polarization reversal, and piezoelectric properties of the individual hexagonal ZnO nanorods, which are grown via the hydrothermal method and textured with [0001] orientation. The studies are conducted with conductive atomic force microscopy (c-AFM) and piezoresponse force microscopy (PFM) techniques. The correlation between the resistance switching and polarization reversal is discussed. The c-AFM results show that there is less variation on the set or reset voltage in nanorod samples, compared to that of the ZnO thin film. With increasing aspect ratio of the nanorods, both set and reset voltages are decreased. The nanorods with low aspect ratio show unipolar resistance switching, whereas both unipolar and bipolar resistance switching are observed when the aspect ratio is larger than 0.26. The PFM results further show the ferroelectric-like property in the nanorods. Comparing with that of the ZnO thin film, the enhanced piezoresponse in the nanorods can be attributed to the size effect. In addition, the piezoresponse force spectroscopy (PFS) experiments are conducted in ambient air, synthetic air, and argon gas. It shows that the depolarization field in the nanorod may be due to the moisture in the environment; moreover, the increased piezoresponse may relate to the absence of oxygen in the environment. It is also shown that the piezoelectric responses increase nonlinearly with the aspect ratio of the nanorods. By comparing the piezoresponse hysteresis loops obtained from the nanorod samples of as-grown, air-annealed and vacuum-annealed, it is found that the oxygen vacancies are the origin of the polarization reversal in ZnO nanorods. Finally, the tradeoff between the electrical and ferroelectric-like properties is also observed.
authors.affiliation: †Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore, 117576.
authors.forename: Juanxiu
authors.initials: J
authors.lastname: Xiao
authors.affiliation: ‡Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117576.
authors.forename: Wei Li
authors.initials: WL
authors.lastname: Ong
authors.affiliation: ∇Engineering Science Programme, National University of Singapore, 4 Engineering Drive 3, Singapore, 117576.
authors.forename: Ziming
authors.initials: Z
authors.lastname: Guo
authors.affiliation: ‡Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117576.|∇Engineering Science Programme, National University of Singapore, 4 Engineering Drive 3, Singapore, 117576.
authors.forename: Ghim Wei
authors.initials: GW
authors.lastname: Ho
authors.affiliation: †Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore, 117576.
authors.forename: Kaiyang
authors.initials: K
authors.lastname: Zeng
keywords: PFM; ZnO nanorods; c-AFM; polarization reversal; resistance switching; size effect