title: 1310 nm hybrid InP/InGaAsP on silicon distributed feedback laser with high side-mode suppression ratio.
abstract: We report on the design, fabrication and performance of a hetero-integrated III-V on silicon distributed feedback lasers (DFB) at 1310 nm based on direct bonding and adiabatic coupling. The continuous wave (CW) regime is achieved up to 55 °C as well as mode-hop-free operation with side-mode suppression ratio (SMSR) above 55 dB. At room temperature, the current threshold is 36 mA and the maximum coupled power in the silicon waveguide is 22 mW.
authors.forename: Helene
authors.initials: H
authors.lastname: Duprez
authors.forename: Antoine
authors.initials: A
authors.lastname: Descos
authors.forename: Thomas
authors.initials: T
authors.lastname: Ferrotti
authors.forename: Corrado
authors.initials: C
authors.lastname: Sciancalepore
authors.forename: Christophe
authors.initials: C
authors.lastname: Jany
authors.forename: Karim
authors.initials: K
authors.lastname: Hassan
authors.forename: Christian
authors.initials: C
authors.lastname: Seassal
authors.forename: Sylvie
authors.initials: S
authors.lastname: Menezo
authors.forename: Badhise
authors.initials: B
authors.lastname: Ben Bakir