title: High-density waveguide superlattices with low crosstalk.
abstract: Silicon photonics holds great promise for low-cost large-scale photonic integration. In its future development, integration density will play an ever-increasing role in a way similar to that witnessed in integrated circuits. Waveguides are perhaps the most ubiquitous component in silicon photonics. As such, the density of waveguide elements is expected to have a crucial influence on the integration density of a silicon photonic chip. A solution to high-density waveguide integration with minimal impact on other performance metrics such as crosstalk remains a vital issue in many applications. Here, we propose a waveguide superlattice and demonstrate advanced superlattice design concepts such as interlacing-recombination that enable high-density waveguide integration at a half-wavelength pitch with low crosstalk. Such waveguide superlattices can potentially lead to significant reduction in on-chip estate for waveguide elements and salient enhancement of performance for important applications, opening up possibilities for half-wavelength-pitch optical-phased arrays and ultra-dense space-division multiplexing.
authors.affiliation: Department of Electrical and Computer Engineering, Rutgers University, Piscataway, New Jersey 08854, USA.
authors.forename: Weiwei
authors.initials: W
authors.lastname: Song
authors.affiliation: Department of Electrical and Computer Engineering, Rutgers University, Piscataway, New Jersey 08854, USA.
authors.forename: Robert
authors.initials: R
authors.lastname: Gatdula
authors.affiliation: Department of Electrical and Computer Engineering, Rutgers University, Piscataway, New Jersey 08854, USA.
authors.forename: Siamak
authors.initials: S
authors.lastname: Abbaslou
authors.affiliation: Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA.
authors.forename: Ming
authors.initials: M
authors.lastname: Lu
authors.affiliation: Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA.
authors.forename: Aaron
authors.initials: A
authors.lastname: Stein
authors.affiliation: 1] Department of Electrical and Computer Engineering, Rutgers University, Piscataway, New Jersey 08854, USA [2] Institute for Advanced Materials, Devices, and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854, USA.
authors.forename: Warren Y-C
authors.initials: WY
authors.lastname: Lai
authors.affiliation: Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: J
authors.initials: J
authors.lastname: Provine
authors.affiliation: Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: R Fabian W
authors.initials: RF
authors.lastname: Pease
authors.affiliation: School of Optics/CREOL, University of Central Florida, Orlando, Florida 32816-2700, USA.
authors.forename: Demetrios N
authors.initials: DN
authors.lastname: Christodoulides
authors.affiliation: 1] Department of Electrical and Computer Engineering, Rutgers University, Piscataway, New Jersey 08854, USA [2] Institute for Advanced Materials, Devices, and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854, USA [3] National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Jiang