title: Passively Q-switched mode-locking of Tm:YAP laser based on Cr:ZnS saturable absorber.
abstract: Using a Cr:ZnS wafer as the saturable absorber, diode-pumped passively Q-switched mode-locking of a Tm:YAP laser at 1976 nm has been realized for the first time, to the best of our knowledge, and nearly 100% modulation depth of Q-switched mode-locking was achieved. The width of the mode-locked pulse was estimated to be about 980 ps with a repetition rate of 350 MHz within a roughly 300-ns-long Q-switched pulse envelope. A maximum output power of 940 mW was obtained, corresponding to the Q-switched pulse energy of 0.55 mJ. The emission wavelength evolution between the continuous-wave and Q-switched mode-locked operations was presented and discussed. The experimental results indicate that the Cr:ZnS absorber is a promising saturable absorber for passively Q-switched mode-locking operation around 2 μm.
authors.forename: Zhaowei
authors.initials: Z
authors.lastname: Wang
authors.forename: Baitao
authors.initials: B
authors.lastname: Zhang
authors.forename: Jingliang
authors.initials: J
authors.lastname: He
authors.forename: Kejian
authors.initials: K
authors.lastname: Yang
authors.forename: Kezhen
authors.initials: K
authors.lastname: Han
authors.forename: Jian
authors.initials: J
authors.lastname: Ning
authors.forename: Jia
authors.initials: J
authors.lastname: Hou
authors.forename: Fei
authors.initials: F
authors.lastname: Lou
mesh_terms: D065638:Absorption, Radiation; D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D053844:Lasers, Solid-State; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*