title: Ambipolar light-emitting organic single-crystal transistors with a grating resonator.
abstract: Electrically driven organic lasers are among the best lasing devices due to their rich variety of emission colors as well as other advantages, including printability, flexibility, and stretchability. However, electrically driven lasing in organic materials has not yet been demonstrated because of serious luminescent efficiency roll-off under high current density. Recently, we found that the organic ambipolar single-crystal transistor is an excellent candidate for lasing devices because it exhibits less efficient roll-off, high current density, and high luminescent efficiency. Although a single-mode resonator combined with light-emitting transistors (LETs) is necessary for electrically driven lasing devices, the fragility of organic crystals has strictly limited the fabrication of resonators, and LETs with optical cavities have never been fabricated until now. To achieve this goal, we improved the soft ultraviolet-nanoimprint lithography method and demonstrated electroluminescence from a single-crystal LET with a grating resonator, which is a crucial milestone for future organic lasers.
authors.affiliation: Department of Applied Physics, Graduate School of Advanced Science and Engineering, Waseda University, Tokyo 169-8555, Japan.
authors.forename: Kenichi
authors.initials: K
authors.lastname: Maruyama
authors.affiliation: Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan.
authors.forename: Kosuke
authors.initials: K
authors.lastname: Sawabe
authors.affiliation: Department of Applied Physics, Graduate School of Advanced Science and Engineering, Waseda University, Tokyo 169-8555, Japan.
authors.forename: Tomo
authors.initials: T
authors.lastname: Sakanoue
authors.affiliation: Department of Applied Physics, Graduate School of Advanced Science and Engineering, Waseda University, Tokyo 169-8555, Japan.
authors.forename: Jinpeng
authors.initials: J
authors.lastname: Li
authors.affiliation: Department of Applied Physics, Graduate School of Advanced Science and Engineering, Waseda University, Tokyo 169-8555, Japan.
authors.forename: Wataru
authors.initials: W
authors.lastname: Takahashi
authors.affiliation: Faculty of Materials Science and Engineering Kyoto Institute of Technology, Kyoto 606-8585, Japan.
authors.forename: Shu
authors.initials: S
authors.lastname: Hotta
authors.affiliation: Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan, RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan.
authors.forename: Yoshihiro
authors.initials: Y
authors.lastname: Iwasa
authors.affiliation: Department of Applied Physics, Graduate School of Advanced Science and Engineering, Waseda University, Tokyo 169-8555, Japan.
authors.forename: Taishi
authors.initials: T
authors.lastname: Takenobu