title: High-power passively mode-locked laser at 1062.4  nm based on Nd:LaGGG disordered crystal.
abstract: A diode-pumped passively continuous-wave mode-locked Nd:(La(x)Gd(1-x))3Ga5O12 (Nd:LaGGG) laser at 1062.4 nm with a semiconductor saturable absorber mirror was demonstrated for the first time, to the best of our knowledge. Pulses with duration of 12.78 ps were produced at a repetition rate of 59.8 MHz. A maximum average mode-locked output power of 3.18 W was obtained at the absorbed pumped power of 10.12 W, corresponding to a slope efficiency of 35.7% and a peak power of 4.2 kW. As far as we know, this is the highest power obtained in the passively mode-locking operation with Nd3+-doped disordered garnet crystals.
authors.forename: Xiancui
authors.initials: X
authors.lastname: Su
authors.forename: Ruwei
authors.initials: R
authors.lastname: Zhao
authors.forename: Baitao
authors.initials: B
authors.lastname: Zhang
authors.forename: Zhitai
authors.initials: Z
authors.lastname: Jia
authors.forename: Jia
authors.initials: J
authors.lastname: Hou
authors.forename: Jingliang
authors.initials: J
authors.lastname: He