title: GaSb-based mid infrared photonic crystal surface emitting lasers.
abstract: We demonstrated for the first time above room temperature (RT) GaSb-based mid-infrared photonic crystal surface emitting lasers (PCSELs). The lasers, under optical pumping, emitted at λ(lasing)~2.3μm, had a temperature insensitive line width of 0.3nm, and a threshold power density (P(th)) ~0.3KW/cm2 at RT. Type-I InGaAsSb quantum wells were used as the active region, and the photonic crystal, a square lattice, was fabricated on the surface to provide optical feedback for laser operation and light coupling for surface emission. The PCSELs were operated at temperatures up to 350K with a small wavelength shift rate of 0.21 nm/K. The PCSELs with different air hole depth were studied. The effect of the etched depth on the laser performance was also investigated using numerical simulation based on the coupled-wave theory. Both the laser wavelength and the threshold power decrease as the depth of the PC becomes larger. The calculated results agree well with the experimental findings.
authors.forename: Chien Hung
authors.initials: CH
authors.lastname: Pan
authors.forename: Chien Hung
authors.initials: CH
authors.lastname: Lin
authors.forename: Ting Yuan
authors.initials: TY
authors.lastname: Chang
authors.forename: Tien Chang
authors.initials: TC
authors.lastname: Lu
authors.forename: Chien Ping
authors.initials: CP
authors.lastname: Lee