title: Towards high mobility InSb nanowire devices.
abstract: We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 K by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility, and after optimization obtain a field effect mobility of [Formula: see text] cm(2) V(-1) s(-1). We further demonstrate the reproducibility of these mobility values which are among the highest reported for nanowires. Our investigations indicate that the mobility is currently limited by adsorption of molecules to the nanowire surface and/or the substrate.
authors.affiliation: QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands.
authors.forename: Önder
authors.initials: Ö
authors.lastname: Gül
authors.forename: David J
authors.initials: DJ
authors.lastname: van Woerkom
authors.forename: Ilse van
authors.initials: Iv
authors.lastname: Weperen
authors.forename: Diana
authors.initials: D
authors.lastname: Car
authors.forename: Sébastien R
authors.initials: SR
authors.lastname: Plissard
authors.forename: Erik P A M
authors.initials: EP
authors.lastname: Bakkers
authors.forename: Leo P
authors.initials: LP
authors.lastname: Kouwenhoven