title: Governing Rule for Dynamic Formation of Grain Boundaries in Grown Graphene.
abstract: Grains and grain boundaries (GBs) in graphene are vital for the control of its properties; however, engineering or controlling them by growth remains a great challenge. Here we discover that the dynamic formation of GBs within chemical vapor deposited polygonal graphene flakes is described by a geometric rule. A GB is formed to be symmetrically tilted and a continuous straight line, and the key parameters including end point, direction of GB line, and misorientation angles between adjacent graphene grains can be determined solely by the geometries of the polygonal graphene flakes. We also show the growth control over the length of straight graphene GB lines and demonstrate the capability of parallel fabrication of field-effect transistor devices across predicted GBs in a straightforward manner. This work constitutes a significant step forward in engineering grains and GBs in graphene.
authors.affiliation: †Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, People's Republic of China.
authors.forename: Wei
authors.initials: W
authors.lastname: Guo
authors.affiliation: †Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, People's Republic of China.
authors.forename: Bin
authors.initials: B
authors.lastname: Wu
authors.affiliation: †Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, People's Republic of China.
authors.forename: Yongtao
authors.initials: Y
authors.lastname: Li
authors.affiliation: †Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, People's Republic of China.
authors.forename: Lifeng
authors.initials: L
authors.lastname: Wang
authors.affiliation: †Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, People's Republic of China.
authors.forename: Jisi
authors.initials: J
authors.lastname: Chen
authors.affiliation: §Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, People's Republic of China.
authors.forename: Bingyan
authors.initials: B
authors.lastname: Chen
authors.affiliation: §Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, People's Republic of China.
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Zhang
authors.affiliation: §Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, People's Republic of China.
authors.forename: Lianmao
authors.initials: L
authors.lastname: Peng
authors.forename: Shuai
authors.initials: S
authors.lastname: Wang
authors.affiliation: †Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, People's Republic of China.
authors.forename: Yunqi
authors.initials: Y
authors.lastname: Liu
keywords: anisotropic etching; chemical vapor deposition; dynamic formation; grain boundaries; graphene