title: Spectroscopic XPEEM of highly conductive SI-doped GaN wires.
abstract: Using soft X-ray photoelectron emission microscopy (XPEEM), complemented by scanning Auger microscopy (SAM) and scanning capacitance microscopy, we have quantitatively studied the incorporation of silicon and band bending at the surface (m-facet) of an individual, highly conductive Si-doped GaN micro-wires (Tchoulfian et al., Applied Physics Letters 102 (12), 2013). Electrically active n-dopants Si atoms in Ga interstitial sites are detected as nitride bonding states in the high-resolution Si2p core level spectra, and represent only a small fraction (<10%) of the overall Si surface concentration measured by SAM. The derived carrier concentration of 2×10(21) at cm(-3) is in reasonable agreement with electrical measurements. A consistent surface band bending of ~1 eV is directly evidenced by surface photo-voltage measurements. Such an approach combining different surface-sensitive microscopies is of interest for studying other heavily doped semiconducting wires.
authors.affiliation: Univ. Grenoble Alpes, F-38000 Grenoble, France; CEA, LETI, MINATEC Campus, F-38054 Grenoble, France. Electronic address: olivier.renault@cea.fr.
authors.forename: O
authors.initials: O
authors.lastname: Renault
authors.affiliation: Univ. Grenoble Alpes, F-38000 Grenoble, France; CEA, LETI, MINATEC Campus, F-38054 Grenoble, France.
authors.forename: J
authors.initials: J
authors.lastname: Morin
authors.affiliation: Univ. Grenoble Alpes, F-38000 Grenoble, France; CEA, LETI, MINATEC Campus, F-38054 Grenoble, France; CNRS, Inst. NEEL, F-38042 Grenoble, France.
authors.forename: P
authors.initials: P
authors.lastname: Tchoulfian
authors.affiliation: Univ. Grenoble Alpes, F-38000 Grenoble, France; CEA, LETI, MINATEC Campus, F-38054 Grenoble, France.
authors.forename: N
authors.initials: N
authors.lastname: Chevalier
authors.affiliation: Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich, Germany.
authors.forename: V
authors.initials: V
authors.lastname: Feyer
authors.affiliation: Univ. Grenoble Alpes, F-38000 Grenoble, France; CNRS, Inst. NEEL, F-38042 Grenoble, France; Institut Universitaire de France, F-75005 Paris, France.
authors.forename: J
authors.initials: J
authors.lastname: Pernot
authors.affiliation: Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich, Germany.
authors.forename: C M
authors.initials: CM
authors.lastname: Schneider