title: Far-field scattering model for wave propagation in random media.
abstract: A simple approximate model is developed for ultrasonic wave propagation in a random elastic medium. The model includes second order multiple scattering and is applicable in all frequency ranges including geometric. It is based on the far field approximation of the reference medium Green's function and simplifications of the mass operator in addition to those of the first smooth approximation. In this approximation, the dispersion equation for the perturbed wave number is obtained; its solution yields the dispersive ultrasonic velocity and attenuation coefficients. The approximate solution is general and is suitable for nonequiaxed grains with arbitrary elastic symmetry. For equiaxed cubic grains, the solution is compared with the existing second order models and with the Born approximation. The comparison shows that the obtained solution has smaller error than the Born approximation and shows reasonably well the onset of multiple scattering and the applicability limit of the Born approximation at high frequency. The perturbed wave number in the developed model does not depend explicitly on the crystallite elastic properties even for arbitrary crystallographic symmetry; it depends on two nondimensional scattering elastic parameters and the macroscopic ultrasonic velocity (those are dependent on the crystallite moduli). This provides an advantage for potential schemes for inversion from attenuation to material microstructure.
authors.affiliation: Department of Materials Science and Engineering, Edison Joining Technology Center, The Ohio State University, 1248 Arthur E. Adams Drive, Columbus, Ohio 43221, USA.
authors.forename: S I
authors.initials: SI
authors.lastname: Rokhlin
authors.affiliation: Department of Materials Science and Engineering, Edison Joining Technology Center, The Ohio State University, 1248 Arthur E. Adams Drive, Columbus, Ohio 43221, USA.
authors.forename: J
authors.initials: J
authors.lastname: Li
authors.affiliation: Department of Materials Science and Engineering, Edison Joining Technology Center, The Ohio State University, 1248 Arthur E. Adams Drive, Columbus, Ohio 43221, USA.
authors.forename: G
authors.initials: G
authors.lastname: Sha