title: Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature.
abstract: We investigated single-layer graphene on SiC(0001) by atomic force and tunneling current microscopy, to separate the topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomic force maps is very low, in accord with theoretical simulations. We also observed that characteristic electron scattering effects on graphene edges and defects are not accompanied by any out-of-plane relaxations of carbon atoms.
authors.affiliation: Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-16200 Prague, Czech Republic ; Charles University, Faculty of Mathematics and Physics, V Holešovičkách 2, Praha 8, Czech Republic.
authors.forename: Mykola
authors.initials: M
authors.lastname: Telychko
authors.affiliation: Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-16200 Prague, Czech Republic ; Department of Physical Electronics, Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Břehová 7, CZ-11519 Prague, Czech Republic.
authors.forename: Jan
authors.initials: J
authors.lastname: Berger
authors.affiliation: Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-16200 Prague, Czech Republic.
authors.forename: Zsolt
authors.initials: Z
authors.lastname: Majzik
authors.affiliation: Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-16200 Prague, Czech Republic.
authors.forename: Pavel
authors.initials: P
authors.lastname: Jelínek
authors.affiliation: Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-16200 Prague, Czech Republic.
authors.forename: Martin
authors.initials: M
authors.lastname: Švec
keywords: AFM; STM; SiC; electron scattering; graphene