title: Hydrothermally Grown In-doped ZnO Nanorods on p-GaN Films for Color-tunable Heterojunction Light-emitting-diodes.
abstract: The incorporation of doping elements in ZnO nanostructures plays an important role in adjusting the optical and electrical properties in optoelectronic devices. In the present study, we fabricated 1-D ZnO nanorods (NRs) doped with different In contents (0% ~ 5%) on p-GaN films using a facile hydrothermal method, and investigated the effect of the In doping on the morphology and electronic structure of the NRs and the electrical and optical performances of the n-ZnO NRs/p-GaN heterojunction light emitting diodes (LEDs). As the In content increased, the size (diameter and length) of the NRs increased, and the electrical performance of the LEDs improved. From the electroluminescence (EL) spectra, it was found that the broad green-yellow-orange emission band significantly increased with increasing In content due to the increased defect states (oxygen vacancies) in the ZnO NRs, and consequently, the superposition of the emission bands centered at 415 nm and 570 nm led to the generation of white-light. These results suggest that In doping is an effective way to tailor the morphology and the optical, electronic, and electrical properties of ZnO NRs, as well as the EL emission property of heterojunction LEDs.
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea.
authors.forename: Geun Chul
authors.initials: GC
authors.lastname: Park
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea.
authors.forename: Soo Min
authors.initials: SM
authors.lastname: Hwang
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea.
authors.forename: Seung Muk
authors.initials: SM
authors.lastname: Lee
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea.
authors.forename: Jun Hyuk
authors.initials: JH
authors.lastname: Choi
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea.
authors.forename: Keun Man
authors.initials: KM
authors.lastname: Song
authors.affiliation: Department of Nanomaterials Engineering, Chungnam National University, Daejeon 305-764, Korea.
authors.forename: Hyun You
authors.initials: HY
authors.lastname: Kim
authors.affiliation: Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764, Korea.
authors.forename: Hyun-Suk
authors.initials: HS
authors.lastname: Kim
authors.affiliation: HeeSung Material Ltd. 113-9, Yongin, Gyeonggi, 449-884, Korea.
authors.forename: Sung-Jin
authors.initials: SJ
authors.lastname: Eum
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea.
authors.forename: Seung-Boo
authors.initials: SB
authors.lastname: Jung
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea.
authors.forename: Jun Hyung
authors.initials: JH
authors.lastname: Lim
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea.
authors.forename: Jinho
authors.initials: J
authors.lastname: Joo