title: Controlled Synthesis of ZrS2 Monolayer and Few Layers on Hexagonal Boron Nitride.
abstract: Group IVB transition metal (Zr and Hf) dichalcogenide (TMD) monolayers can have higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMD monolayers. Here we report the synthesis of hexagonal ZrS2 monolayer and few layers on hexagonal boron nitride (BN) using ZrCl4 and S as precursors. The domain size of ZrS2 hexagons is around 1-3 μm. The number of layers of ZrS2 was controlled by tuning the evaporation temperature of ZrCl4. The stacking angle between ZrS2 and BN characterized by transmission electron microscopy shows a preferred stacking angle of near 0°. Field-effect transistors (FETs) fabricated on ZrS2 flakes showed n-type transport behavior with an estimated mobility of 0.1-1.1 cm(2) V(-1) s(-1).
authors.affiliation: †CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
authors.forename: Mei
authors.initials: M
authors.lastname: Zhang
authors.affiliation: †CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.|‡Department of Applied Physics, Chongqing University, Chongqing 401331, P. R. China.
authors.forename: Yiming
authors.initials: Y
authors.lastname: Zhu
authors.affiliation: †CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
authors.forename: Xinsheng
authors.initials: X
authors.lastname: Wang
authors.affiliation: †CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.|§Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China.
authors.forename: Qingliang
authors.initials: Q
authors.lastname: Feng
authors.affiliation: †CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
authors.forename: Shanlin
authors.initials: S
authors.lastname: Qiao
authors.affiliation: †CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
authors.forename: Wen
authors.initials: W
authors.lastname: Wen
authors.affiliation: †CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
authors.forename: Yanfeng
authors.initials: Y
authors.lastname: Chen
authors.affiliation: †CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
authors.forename: Menghua
authors.initials: M
authors.lastname: Cui
authors.affiliation: §Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China.
authors.forename: Jin
authors.initials: J
authors.lastname: Zhang
authors.affiliation: ‡Department of Applied Physics, Chongqing University, Chongqing 401331, P. R. China.
authors.forename: Congzhong
authors.initials: C
authors.lastname: Cai
authors.affiliation: †CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
authors.forename: Liming
authors.initials: L
authors.lastname: Xie