title: Micro/Nano gas sensors: a new strategy towards in-situ wafer-level fabrication of high-performance gas sensing chips.
abstract: Nano-structured gas sensing materials, in particular nanoparticles, nanotubes, and nanowires, enable high sensitivity at a ppb level for gas sensors. For practical applications, it is highly desirable to be able to manufacture such gas sensors in batch and at low cost. We present here a strategy of in-situ wafer-level fabrication of the high-performance micro/nano gas sensing chips by naturally integrating microhotplatform (MHP) with nanopore array (NPA). By introducing colloidal crystal template, a wafer-level ordered homogenous SnO2 NPA is synthesized in-situ on a 4-inch MHP wafer, able to produce thousands of gas sensing units in one batch. The integration of micromachining process and nanofabrication process endues micro/nano gas sensing chips at low cost, high throughput, and with high sensitivity (down to ~20 ppb), fast response time (down to ~1 s), and low power consumption (down to ~30 mW). The proposed strategy of integrating MHP with NPA represents a versatile approach for in-situ wafer-level fabrication of high-performance micro/nano gas sensors for real industrial applications.
authors.affiliation: 1] Science and Technology on Micro-system Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China [2] California Institute of Technology, Pasadena, California 91125, USA.
authors.forename: Lei
authors.initials: L
authors.lastname: Xu
authors.affiliation: Key Lab of Materials Physics, Anhui Key lab of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, Anhui, China.
authors.forename: Zhengfei
authors.initials: Z
authors.lastname: Dai
authors.affiliation: Key Lab of Materials Physics, Anhui Key lab of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, Anhui, China.
authors.forename: Guotao
authors.initials: G
authors.lastname: Duan
authors.affiliation: Science and Technology on Micro-system Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
authors.forename: Lianfeng
authors.initials: L
authors.lastname: Guo
authors.affiliation: Science and Technology on Micro-system Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
authors.forename: Yi
authors.initials: Y
authors.lastname: Wang
authors.affiliation: Science and Technology on Micro-system Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
authors.forename: Hong
authors.initials: H
authors.lastname: Zhou
authors.affiliation: Science and Technology on Micro-system Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
authors.forename: Yanxiang
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Key Lab of Materials Physics, Anhui Key lab of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, Anhui, China.
authors.forename: Weiping
authors.initials: W
authors.lastname: Cai
authors.affiliation: Science and Technology on Micro-system Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
authors.forename: Yuelin
authors.initials: Y
authors.lastname: Wang
authors.affiliation: Science and Technology on Micro-system Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
authors.forename: Tie
authors.initials: T
authors.lastname: Li