title: MoS2 Surface Structure Tailoring via Carbonaceous Promoter.
abstract: Atomically thin semiconducting transition-metal dichalcogenides have been attracting lots of attentions, particularly, molybdenum disulfide (MoS2) monolayers show promising applications in field effect transistors, optoelectronics and valleytronics. However, the controlled synthesis of highly crystalline MoS2 remain a challenge especially the systematic approach to manipulate its structure and morphology. Herein, we report a method for controlled synthesis of highly crystalline MoS2 by using chemical vapor deposition method with carbonaceous materials as growth promoter. A uniform and highly crystalline MoS2 monolayer with the grain size close to 40 μm was achieved. Furthermore, we extend the method to the manipulation of MoS2 morphology, flower-shape vertical grown MoS2 layers were obtained on growth promoting substrates. This simple approach allows an easy access of highly crystalline MoS2 layers with morphology tuned in a controllable manner. Moreover, the flower-shape MoS2 grown on graphene oxide film used as an anode material for lithium-ion batteries showed excellent electrochemical performance.
authors.affiliation: Pillar of Engineering Product Development, Singapore University of Technology and Design, Singapore 487372.
authors.forename: Yumeng
authors.initials: Y
authors.lastname: Shi
authors.affiliation: Nanyang Technological University, School of Materials Science and Engineering, 50 Nanyang Avenue, Singapore 639798.
authors.forename: Henan
authors.initials: H
authors.lastname: Li
authors.affiliation: Pillar of Engineering Product Development, Singapore University of Technology and Design, Singapore 487372.
authors.forename: Jen It
authors.initials: JI
authors.lastname: Wong
authors.affiliation: State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029.
authors.forename: Xiaoting
authors.initials: X
authors.lastname: Zhang
authors.affiliation: Pillar of Engineering Product Development, Singapore University of Technology and Design, Singapore 487372.
authors.forename: Ye
authors.initials: Y
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029.
authors.forename: Huaihe
authors.initials: H
authors.lastname: Song
authors.affiliation: Pillar of Engineering Product Development, Singapore University of Technology and Design, Singapore 487372.
authors.forename: Hui Ying
authors.initials: HY
authors.lastname: Yang