title: Conductive-bridging random access memory: challenges and opportunity for 3D architecture.
abstract: The performances of conductive-bridging random access memory (CBRAM) have been reviewed for different switching materials such as chalcogenides, oxides, and bilayers in different structures. The structure consists of an inert electrode and one oxidized electrode of copper (Cu) or silver (Ag). The switching mechanism is the formation/dissolution of a metallic filament in the switching materials under external bias. However, the growth dynamics of the metallic filament in different switching materials are still debated. All CBRAM devices are switching under an operation current of 0.1 μA to 1 mA, and an operation voltage of ±2 V is also needed. The device can reach a low current of 5 pA; however, current compliance-dependent reliability is a challenging issue. Although a chalcogenide-based material has opportunity to have better endurance as compared to an oxide-based material, data retention and integration with the complementary metal-oxide-semiconductor (CMOS) process are also issues. Devices with bilayer switching materials show better resistive switching characteristics as compared to those with a single switching layer, especially a program/erase endurance of >10(5) cycles with a high speed of few nanoseconds. Multi-level cell operation is possible, but the stability of the high resistance state is also an important reliability concern. These devices show a good data retention of >10(5) s at >85°C. However, more study is needed to achieve a 10-year guarantee of data retention for non-volatile memory application. The crossbar memory is benefited for high density with low power operation. Some CBRAM devices as a chip have been reported for proto-typical production. This review shows that operation current should be optimized for few microamperes with a maintaining speed of few nanoseconds, which will have challenges and also opportunities for three-dimensional (3D) architecture.
authors.affiliation: Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333 Taiwan.
authors.forename: Debanjan
authors.initials: D
authors.lastname: Jana
authors.affiliation: Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333 Taiwan.
authors.forename: Sourav
authors.initials: S
authors.lastname: Roy
authors.affiliation: Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333 Taiwan.
authors.forename: Rajeswar
authors.initials: R
authors.lastname: Panja
authors.affiliation: Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333 Taiwan.
authors.forename: Mrinmoy
authors.initials: M
authors.lastname: Dutta
authors.affiliation: Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333 Taiwan.
authors.forename: Sheikh Ziaur
authors.initials: SZ
authors.lastname: Rahaman
authors.affiliation: Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333 Taiwan ; Department of Electronics and Communication Engineering, National Institute of Technology, Durgapur, 713 209 India.
authors.forename: Rajat
authors.initials: R
authors.lastname: Mahapatra
authors.affiliation: Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan 333 Taiwan.
authors.forename: Siddheswar
authors.initials: S
authors.lastname: Maikap
keywords: Bilayer; CBRAM; Chalcogenide; Conductive bridge; Memory; Resistive switching; Solid electrolyte; Three-dimensional (3D)