title: Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases.
abstract: A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm(3) along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range.
authors.affiliation: §Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
authors.forename: Biaolin
authors.initials: B
authors.lastname: Peng
authors.affiliation: ∥Department of Manufacturing and Materials, Cranfield University, Cranfield, Bedfordshire MK43 0AL, United Kingdom.|⊥State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, Hubei, P. R. China.
authors.forename: Qi
authors.initials: Q
authors.lastname: Zhang
authors.affiliation: §Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
authors.forename: Xing
authors.initials: X
authors.lastname: Li
authors.affiliation: §Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
authors.forename: Tieyu
authors.initials: T
authors.lastname: Sun
authors.affiliation: #State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China.
authors.forename: Huiqing
authors.initials: H
authors.lastname: Fan
authors.forename: Shanming
authors.initials: S
authors.lastname: Ke
authors.forename: Mao
authors.initials: M
authors.lastname: Ye
authors.affiliation: §Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Wang
authors.affiliation: §Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Lu
authors.forename: Hanben
authors.initials: H
authors.lastname: Niu
authors.forename: Xierong
authors.initials: X
authors.lastname: Zeng
authors.affiliation: §Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
authors.forename: Haitao
authors.initials: H
authors.lastname: Huang
keywords: antiferroelectric; energy storage; relaxor; sol−gel; textured