title: Strain in a silicon-on-insulator nanostructure revealed by 3D x-ray Bragg ptychography.
abstract: Progresses in the design of well-defined electronic band structure and dedicated functionalities rely on the high control of complex architectural device nano-scaled structures. This includes the challenging accurate description of strain fields in crystalline structures, which requires non invasive and three-dimensional (3D) imaging methods. Here, we demonstrate in details how x-ray Bragg ptychography can be used to quantify in 3D a displacement field in a lithographically patterned silicon-on-insulator structure. The image of the crystalline properties, which results from the phase retrieval of a coherent intensity data set, is obtained from a well-controlled optimized process, for which all steps are detailed. These results confirm the promising perspectives of 3D Bragg ptychography for the investigation of complex nano-structured crystals in material science.
authors.affiliation: Aix-Marseille Université, CNRS, Centrale Marseille, Institut Fresnel UMR7249, 13013 Marseille, France.
authors.forename: V
authors.initials: V
authors.lastname: Chamard
authors.affiliation: Aix-Marseille Université, CNRS, Centrale Marseille, Institut Fresnel UMR7249, 13013 Marseille, France.
authors.forename: M
authors.initials: M
authors.lastname: Allain
authors.affiliation: 1] Aix-Marseille Université, CNRS, Centrale Marseille, Institut Fresnel UMR7249, 13013 Marseille, France [2] Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope, France.
authors.forename: P
authors.initials: P
authors.lastname: Godard
authors.affiliation: Laboratoire de Photonique et de Nanostructures, CNRS, 91460 Marcoussis, France.
authors.forename: A
authors.initials: A
authors.lastname: Talneau
authors.affiliation: Laboratoire de Photonique et de Nanostructures, CNRS, 91460 Marcoussis, France.
authors.forename: G
authors.initials: G
authors.lastname: Patriarche
authors.affiliation: 1] European Synchrotron Radiation Facility, BP220, 38043 Grenoble, France [2] Department of Analytical Chemistry, Ghent University, Krijgslaan 281, S12, 9000 Ghent, 9000 Ghent.
authors.forename: M
authors.initials: M
authors.lastname: Burghammer