title: Double-Patterned Sidewall Directed Self-Assembly and Pattern Transfer of Sub-10 nm PTMSS-b-PMOST.
abstract: The directed self-assembly (DSA) of two sub-20 nm pitch silicon-containing block copolymers (BCPs) was accomplished using a double-patterned sidewall scheme in which each lithographic prepatterned feature produced two regions for pattern registration. In doing so, the critical dimension of the lithographic prepatterns was relaxed by a factor of 2 compared to previously reported schemes for DSA. The key to enabling the double-patterned sidewall scheme is the exploitation of the oxidized sidewalls of cross-linked polystyrene formed during the pattern transfer of the resist via reactive ion etching. This results in shallow trenches with two guiding interfaces per prepatterned feature. Electron loss spectroscopy was used to study and confirm the guiding mechanism of the double-patterned sidewalls, and pattern transfer of the BCPs into a silicon substrate was achieved using reactive ion etching. The line edge roughness, width roughness, and placement error are near the target required for bit-patterned media applications, and the technique is also compatible with the needs of the semiconductor industry for high-volume manufacturing.
authors.affiliation: †HGST, a Western Digital Company, 3403 Yerba Buena Rd., San Jose, California 95135, United States.
authors.forename: Julia
authors.initials: J
authors.lastname: Cushen
authors.affiliation: †HGST, a Western Digital Company, 3403 Yerba Buena Rd., San Jose, California 95135, United States.
authors.forename: Lei
authors.initials: L
authors.lastname: Wan
authors.affiliation: ‡The University of Texas at Austin, McKetta Department of Chemical Engineering, 200 E Dean Keeton St. Stop C0400, Austin, Texas 78712, United States.
authors.forename: Gregory
authors.initials: G
authors.lastname: Blachut
authors.affiliation: §The University of Texas at Austin, Department of Chemistry, 105 E. 24th St. Stop A5300, Austin, Texas 78712, United States.
authors.forename: Michael J
authors.initials: MJ
authors.lastname: Maher
authors.affiliation: †HGST, a Western Digital Company, 3403 Yerba Buena Rd., San Jose, California 95135, United States.
authors.forename: Thomas R
authors.initials: TR
authors.lastname: Albrecht
authors.affiliation: ‡The University of Texas at Austin, McKetta Department of Chemical Engineering, 200 E Dean Keeton St. Stop C0400, Austin, Texas 78712, United States.
authors.forename: Christopher J
authors.initials: CJ
authors.lastname: Ellison
authors.affiliation: ‡The University of Texas at Austin, McKetta Department of Chemical Engineering, 200 E Dean Keeton St. Stop C0400, Austin, Texas 78712, United States.|§The University of Texas at Austin, Department of Chemistry, 105 E. 24th St. Stop A5300, Austin, Texas 78712, United States.
authors.forename: C Grant
authors.initials: CG
authors.lastname: Willson
authors.affiliation: †HGST, a Western Digital Company, 3403 Yerba Buena Rd., San Jose, California 95135, United States.
authors.forename: Ricardo
authors.initials: R
authors.lastname: Ruiz
keywords: block copolymer; chemical contrast patterns; density multiplication; directed self-assembly; sidewall-guiding; silicon-containing; top coat