title: Quantum Anomalous Hall Effect in Graphene-based Heterostructure.
abstract: Quantum anomalous Hall (QAH) effect, with potential applications in low-power-consumption electronics, is predicted in the heterostructure of graphene on the (001) surface of a real antiferromagnetic insulator RbMnCl3, based on density-functional theory and Wannier function methods. Due to the interactions from the substrate, a much large exchange field (about 280 meV) and an enhanced Rashba spin-orbit coupling are induced in graphene, leading to a topologically nontrivial QAH gap opened in the system. The avenues of enhancing the nontrivial gap are also proposed, from which nearly a gap one order large is achieved. Our work demonstrates that this graphene-based heterostructure is an appropriate candidate to be employed to experimentally observe the QAH effect and explore the promising applications.
authors.affiliation: State Key Laboratory of Surface Physics and Key Laboratory for Computational Physical Sciences (MOE) &Department of Physics, Fudan University, Shanghai 200433, China.
authors.forename: Jiayong
authors.initials: J
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Surface Physics and Key Laboratory for Computational Physical Sciences (MOE) &Department of Physics, Fudan University, Shanghai 200433, China.
authors.forename: Bao
authors.initials: B
authors.lastname: Zhao
authors.affiliation: School of Physics, Beijing Institute of Technology, Beijing 100081, China.
authors.forename: Yugui
authors.initials: Y
authors.lastname: Yao
authors.affiliation: 1] State Key Laboratory of Surface Physics and Key Laboratory for Computational Physical Sciences (MOE) &Department of Physics, Fudan University, Shanghai 200433, China [2] Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai, 200433, China.
authors.forename: Zhongqin
authors.initials: Z
authors.lastname: Yang