title: Maskless inverted pyramid texturization of silicon.
abstract: We discovered a technical solution of such outstanding importance that it can trigger new approaches in silicon wet etching processing and, in particular, photovoltaic cell manufacturing. The so called inverted pyramid arrays, outperforming conventional pyramid textures and black silicon because of their superior light-trapping and structure characteristics, can currently only be achieved using more complex techniques involving lithography, laser processing, etc. Importantly, our data demonstrate a feasibility of inverted pyramidal texturization of silicon by maskless Cu-nanoparticles assisted etching in Cu(NO3)2 / HF / H2O2 / H2O solutions and as such may have significant impacts on communities of fellow researchers and industrialists.
authors.affiliation: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Wang
authors.affiliation: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Lixia
authors.initials: L
authors.lastname: Yang
authors.affiliation: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Yaoping
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Zengxia
authors.initials: Z
authors.lastname: Mei
authors.affiliation: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Chen
authors.affiliation: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Junqiang
authors.initials: J
authors.lastname: Li
authors.affiliation: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Huili
authors.initials: H
authors.lastname: Liang
authors.affiliation: Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, PO Box 1048 Blindern, Oslo, NO-0316, Norway.
authors.forename: Andrej
authors.initials: A
authors.lastname: Kuznetsov
authors.affiliation: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Du
authors.initials: D
authors.lastname: Xiaolong