title: Polarization-sensitive broadband photodetector using a black phosphorus vertical p-n junction.
abstract: The ability to detect light over a broad spectral range is central to practical optoelectronic applications and has been successfully demonstrated with photodetectors of two-dimensional layered crystals such as graphene and MoS2. However, polarization sensitivity within such a photodetector remains elusive. Here, we demonstrate a broadband photodetector using a layered black phosphorus transistor that is polarization-sensitive over a bandwidth from ∼400 nm to 3,750 nm. The polarization sensitivity is due to the strong intrinsic linear dichroism, which arises from the in-plane optical anisotropy of this material. In this transistor geometry, a perpendicular built-in electric field induced by gating can spatially separate the photogenerated electrons and holes in the channel, effectively reducing their recombination rate and thus enhancing the performance for linear dichroism photodetection. The use of anisotropic layered black phosphorus in polarization-sensitive photodetection might provide new functionalities in novel optical and optoelectronic device applications.
authors.affiliation: 1] Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA [2] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
authors.forename: Hongtao
authors.initials: H
authors.lastname: Yuan
authors.affiliation: Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.
authors.forename: Xiaoge
authors.initials: X
authors.lastname: Liu
authors.affiliation: Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.
authors.forename: Farzaneh
authors.initials: F
authors.lastname: Afshinmanesh
authors.affiliation: Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.
authors.forename: Wei
authors.initials: W
authors.lastname: Li
authors.affiliation: Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.
authors.forename: Gang
authors.initials: G
authors.lastname: Xu
authors.affiliation: Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.
authors.forename: Jie
authors.initials: J
authors.lastname: Sun
authors.affiliation: Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.
authors.forename: Biao
authors.initials: B
authors.lastname: Lian
authors.affiliation: Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.
authors.forename: Alberto G
authors.identifier: 0000000336285311
authors.initials: AG
authors.lastname: Curto
authors.affiliation: 1] Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China [2] Key Laboratory of Strongly-coupled Quantum Matter Physics, Chinese Academy of Sciences, Hefei, Anhui 230026, China.
authors.forename: Guojun
authors.initials: G
authors.lastname: Ye
authors.affiliation: 1] Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA [2] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
authors.forename: Yasuyuki
authors.initials: Y
authors.lastname: Hikita
authors.affiliation: 1] Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA [2] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
authors.forename: Zhixun
authors.initials: Z
authors.lastname: Shen
authors.affiliation: 1] Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA [2] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
authors.forename: Shou-Cheng
authors.initials: SC
authors.lastname: Zhang
authors.affiliation: 1] Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China [2] Key Laboratory of Strongly-coupled Quantum Matter Physics, Chinese Academy of Sciences, Hefei, Anhui 230026, China [3] High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, Anhui 230031, China [4] Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Xianhui
authors.initials: X
authors.lastname: Chen
authors.affiliation: 1] Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA [2] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
authors.forename: Mark
authors.initials: M
authors.lastname: Brongersma
authors.affiliation: 1] Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA [2] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
authors.forename: Harold Y
authors.initials: HY
authors.lastname: Hwang
authors.affiliation: 1] Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA [2] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
authors.forename: Yi
authors.initials: Y
authors.lastname: Cui