title: Rotation-misfit-free heteroepitaxial stacking and stitching growth of hexagonal transition-metal dichalcogenide monolayers by nucleation kinetics controls.
abstract: 2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits.
authors.affiliation: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, 790-784, Korea.|Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang, 790-784, Korea.
authors.forename: Hoseok
authors.initials: H
authors.lastname: Heo
authors.affiliation: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, 790-784, Korea.|Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang, 790-784, Korea.
authors.forename: Ji Ho
authors.initials: JH
authors.lastname: Sung
authors.affiliation: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, 790-784, Korea.|Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang, 790-784, Korea.
authors.forename: Gangtae
authors.initials: G
authors.lastname: Jin
authors.affiliation: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, 790-784, Korea.
authors.forename: Ji-Hoon
authors.initials: JH
authors.lastname: Ahn
authors.affiliation: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, 790-784, Korea.|Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang, 790-784, Korea.
authors.forename: Kyungwook
authors.initials: K
authors.lastname: Kim
authors.affiliation: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, 790-784, Korea.
authors.forename: Myoung-Jae
authors.initials: MJ
authors.lastname: Lee
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Korea.
authors.forename: Soonyoung
authors.initials: S
authors.lastname: Cha
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Korea.
authors.forename: Hyunyong
authors.initials: H
authors.lastname: Choi
authors.affiliation: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, 790-784, Korea.|Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang, 790-784, Korea.|Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang, 790-784, Korea.
authors.forename: Moon-Ho
authors.initials: MH
authors.lastname: Jo
keywords: 2D materials; heterostructures; hexagonal transition-metal dichalcogenides; monolayer semiconductors; superlattices