title: Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays.
abstract: One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 μm provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 × 10(8) cm · Hz(1/2)/W for the SWIR band at 77 K and operates at temperatures as high as 220 K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.
authors.affiliation: 1] Korea Photonics Technology and Institute, Gwangju 550-779, Republic of Korea [2] Department of Applied Physics, Kyung Hee University, Yongin 446-701, Republic of Korea.
authors.forename: Hyun Wook
authors.initials: HW
authors.lastname: Shin
authors.affiliation: Korea Research Institute of Standards and Science, Daejeon, 305-340, Republic of Korea.
authors.forename: Sang Jun
authors.initials: SJ
authors.lastname: Lee
authors.affiliation: Korea Photonics Technology and Institute, Gwangju 550-779, Republic of Korea.
authors.forename: Doo Gun
authors.initials: DG
authors.lastname: Kim
authors.affiliation: Korea Research Institute of Standards and Science, Daejeon, 305-340, Republic of Korea.
authors.forename: Myung-Ho
authors.initials: MH
authors.lastname: Bae
authors.affiliation: Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757, Republic of Korea.
authors.forename: Jaeyeong
authors.initials: J
authors.lastname: Heo
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science &Technology, Ulsan 689-805, Republic of Korea.
authors.forename: Kyoung Jin
authors.initials: KJ
authors.lastname: Choi
authors.affiliation: Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
authors.forename: Won Jun
authors.initials: WJ
authors.lastname: Choi
authors.affiliation: Department of Applied Physics, Kyung Hee University, Yongin 446-701, Republic of Korea.
authors.forename: Jeong-woo
authors.initials: JW
authors.lastname: Choe
authors.affiliation: Department of Physics, Yeungnam University, Gyeongsan, Gyeongbuk 712-749, Republic of Korea.
authors.forename: Jae Cheol
authors.initials: JC
authors.lastname: Shin