title: Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors.
abstract: Atomically thin molybdenum disulfide (MoS2) is a promising two-dimensional semiconductor for high-performance flexible electronics, sensors, transducers, and energy conversion. Here, piezoresistive strain sensing with flexible MoS2 field-effect transistors (FETs) made from highly uniform large-area films is demonstrated. The origin of the piezoresistivity in MoS2 is the strain-induced band gap change, which is confirmed by optical reflection spectroscopy. In addition, the sensitivity to strain can be tuned by more than 1 order of magnitude by adjusting the Fermi level via gate biasing.
authors.affiliation: †School of Materials Science and Engineering and ‡School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
authors.forename: Meng-Yen
authors.initials: MY
authors.lastname: Tsai
authors.affiliation: †School of Materials Science and Engineering and ‡School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
authors.forename: Alexey
authors.initials: A
authors.lastname: Tarasov
authors.affiliation: †School of Materials Science and Engineering and ‡School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
authors.forename: Zohreh R
authors.initials: ZR
authors.lastname: Hesabi
authors.affiliation: †School of Materials Science and Engineering and ‡School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
authors.forename: Hossein
authors.initials: H
authors.lastname: Taghinejad
authors.affiliation: †School of Materials Science and Engineering and ‡School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
authors.forename: Philip M
authors.initials: PM
authors.lastname: Campbell
authors.affiliation: †School of Materials Science and Engineering and ‡School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
authors.forename: Corey A
authors.initials: CA
authors.lastname: Joiner
authors.affiliation: †School of Materials Science and Engineering and ‡School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
authors.forename: Ali
authors.initials: A
authors.lastname: Adibi
authors.affiliation: †School of Materials Science and Engineering and ‡School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
authors.forename: Eric M
authors.initials: EM
authors.lastname: Vogel
keywords: TMDC; field-effect transistor; flexible electronics; gauge factor; piezoresistive strain sensing; transition metal dichalcogenide; wafer-scale MoS2