title: Giant Electroresistive Ferroelectric Diode on 2DEG.
abstract: Manipulation of electrons in a solid through transmitting, storing, and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal. Here, we demonstrate a giant electroresistive ferroelectric diode integrating a ferroelectric capacitor into two-dimensional electron gas (2DEG) at oxide interface. As a model system, we fabricate an epitaxial Au/Pb(Zr(0.2)Ti(0.8))O3/LaAlO3/SrTiO3 heterostructure, where 2DEG is formed at LaAlO3/SrTiO3 interface. This device functions as a two-terminal, non-volatile memory of 1 diode-1 resistor with a large I+/I- ratio (>10(8) at ± 6 V) and I(on)/I(off) ratio (>10(7)). This is attributed to not only Schottky barrier modulation at metal/ferroelectric interface by polarization reversal but also the field-effect metal-insulator transition of 2DEG. Moreover, using this heterostructure, we can demonstrate a memristive behavior for an artificial synapse memory, where the resistance can be continuously tuned by partial polarization switching, and the electrons are only unidirectionally transmitted. Beyond non-volatile memory and logic devices, our results will provide new opportunities to emerging electronic devices such as multifunctional nanoelectronics and neuromorphic electronics.
authors.affiliation: 1] Center for Electronic Materials, Korea Institute of Science and Technology Seoul 136-791, Republic of Korea [2] Department of Nanomaterials Science and Technology, Korea University of Science and Technology, Daejeon, 305-333, Republic of Korea.
authors.forename: Shin-Ik
authors.initials: SI
authors.lastname: Kim
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology Seoul 136-791, Republic of Korea.
authors.forename: Hyo
authors.initials: H
authors.lastname: Jin Gwon
authors.affiliation: Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 151-744, Republic of Korea.
authors.forename: Dai-Hong
authors.initials: DH
authors.lastname: Kim
authors.affiliation: 1] Center for Electronic Materials, Korea Institute of Science and Technology Seoul 136-791, Republic of Korea [2] Department of Nanomaterials Science and Technology, Korea University of Science and Technology, Daejeon, 305-333, Republic of Korea.
authors.forename: Seong
authors.initials: S
authors.lastname: Keun Kim
authors.affiliation: 1] Center for Electronic Materials, Korea Institute of Science and Technology Seoul 136-791, Republic of Korea [2] Department of Nanomaterials Science and Technology, Korea University of Science and Technology, Daejeon, 305-333, Republic of Korea.
authors.forename: Ji-Won
authors.initials: JW
authors.lastname: Choi
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology Seoul 136-791, Republic of Korea.
authors.forename: Seok-Jin
authors.initials: SJ
authors.lastname: Yoon
authors.affiliation: Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
authors.forename: Hye
authors.initials: H
authors.lastname: Jung Chang
authors.affiliation: 1] Center for Electronic Materials, Korea Institute of Science and Technology Seoul 136-791, Republic of Korea [2] KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 136-701, Republic of Korea.
authors.forename: Chong-Yun
authors.initials: CY
authors.lastname: Kang
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology Seoul 136-791, Republic of Korea.
authors.forename: Beomjin
authors.initials: B
authors.lastname: Kwon
authors.affiliation: Department of Electrical Engineering, Gachon University, Seongnam-Si, Gyeonggi-Do, 461-701, Republic of Korea.
authors.forename: Chung-Wung
authors.initials: CW
authors.lastname: Bark
authors.affiliation: Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 151-744, Republic of Korea.
authors.forename: Seong-Hyeon
authors.initials: SH
authors.lastname: Hong
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology Seoul 136-791, Republic of Korea.
authors.forename: Jin-Sang
authors.initials: JS
authors.lastname: Kim
authors.affiliation: 1] Center for Electronic Materials, Korea Institute of Science and Technology Seoul 136-791, Republic of Korea [2] Department of Nanomaterials Science and Technology, Korea University of Science and Technology, Daejeon, 305-333, Republic of Korea.
authors.forename: Seung-Hyub
authors.initials: SH
authors.lastname: Baek