title: A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency.
abstract: Cu2ZnSnS4 thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5-1.5 μm) were synthesized using co-electrodeposited Cu-Zn-Sn-S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%.
authors.affiliation: Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China. lsun@ee.ecnu.edu.cn.
authors.forename: Jiahua
authors.initials: J
authors.lastname: Tao
authors.forename: Kezhi
authors.initials: K
authors.lastname: Zhang
authors.forename: Chuanjun
authors.initials: C
authors.lastname: Zhang
authors.forename: Leilei
authors.initials: L
authors.lastname: Chen
authors.forename: Huiyi
authors.initials: H
authors.lastname: Cao
authors.forename: Junfeng
authors.initials: J
authors.lastname: Liu
authors.forename: Jinchun
authors.initials: J
authors.lastname: Jiang
authors.forename: Lin
authors.initials: L
authors.lastname: Sun
authors.forename: Pingxiong
authors.initials: P
authors.lastname: Yang
authors.forename: Junhao
authors.initials: J
authors.lastname: Chu