title: In-Plane Si Nanowire Growth Mechanism in Absence of External Si Flux.
abstract: We report on a new mechanism of nanowire formation: during Au deposition on Si(110) substrates, Au-Si droplets grow, move spontaneously, and fabricate a Si nanowire behind them in the absence of Si external flux. Nanowires are formed by Si dissolved from the substrate at the advancing front of the droplets and transported backward to the crystallization front. The droplet shape is determined by the Si etching anisotropy. The nanowire formation can be tuned by changing experimental parameters like substrate temperature and Au deposition rate.
authors.affiliation: Aix Marseille Université, CNRS, CINaM UMR 7325, 13288 Marseille, France.
authors.forename: Stefano
authors.initials: S
authors.lastname: Curiotto
authors.affiliation: Aix Marseille Université, CNRS, CINaM UMR 7325, 13288 Marseille, France.
authors.forename: Frédéric
authors.initials: F
authors.lastname: Leroy
authors.affiliation: Aix Marseille Université, CNRS, CINaM UMR 7325, 13288 Marseille, France.
authors.forename: Fabien
authors.initials: F
authors.lastname: Cheynis
authors.affiliation: Aix Marseille Université, CNRS, CINaM UMR 7325, 13288 Marseille, France.
authors.forename: Pierre
authors.initials: P
authors.lastname: Müller
keywords: Au−Si; In-plane nanowires; LEEM; Si(110); moving droplets