title: Formation of Nanocomposites by Oxidizing Annealing of SiO x and SiO x <Er,F> Films: Ellipsometry and FTIR Analysis.
abstract: The structural-phase transformations induced by air annealing of SiO x and SiO x  < Er,F > films were studied by the combined use of infrared spectroscopy and ellipsometry. The films were prepared using vacuum evaporation of SiO powder and co-evaporation of SiO and ErF3 powders. The annealing took place at moderate temperatures (750 and 1000 °C). It was found that the micro- and macrostructure of the annealed films is similar to the structure of the Si-SiO x nanocomposites obtained by annealing SiO x in vacuum or inert atmosphere and subjected to post-annealing in oxidizing atmosphere. This proves that the phase separation in the non-stoichiometric SiO x films proceeds much faster than their oxidation. The results of the work point at a possibility to simplify the annealing technology by replacing the two-step annealing with one-step in the oxygen-containing environment while maintaining the positive effects. The differences in the structure of the nanocomposites obtained by annealing the SiO x and SiO x  < Er,F > films are explained by the action of Er centers as the promoters for SiO x disproportionation, as well as the enhanced action of F on the processes of disorder-to-order transition and crystallization in amorphous silicon.
authors.affiliation: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, Prospect Nauky, 03028 Kyiv, Ukraine.
authors.forename: Mykola V
authors.initials: MV
authors.lastname: Sopinskyy
authors.affiliation: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, Prospect Nauky, 03028 Kyiv, Ukraine.
authors.forename: Natalya A
authors.initials: NA
authors.lastname: Vlasenko
authors.affiliation: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, Prospect Nauky, 03028 Kyiv, Ukraine.
authors.forename: Igor P
authors.initials: IP
authors.lastname: Lisovskyy
authors.affiliation: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, Prospect Nauky, 03028 Kyiv, Ukraine.
authors.forename: Sergii O
authors.initials: SO
authors.lastname: Zlobin
authors.affiliation: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, Prospect Nauky, 03028 Kyiv, Ukraine.
authors.forename: Zinoviia F
authors.initials: ZF
authors.lastname: Tsybrii
authors.affiliation: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, Prospect Nauky, 03028 Kyiv, Ukraine.
authors.forename: Lyudmyla I
authors.initials: LI
authors.lastname: Veligura
keywords: Ellipsometry; ErF3; Erbium; Fluorine; Infrared spectroscopy; Nanocomposite; SiOx; Silicon nanoparticles; Silicon oxide films