title: SiGe quantum dot crystals with periods down to 35 nm.
abstract: By combining extreme ultraviolet interference lithography with Si/Ge molecular beam epitaxy, densely packed quantum dot (QD) arrays with lateral periodicities down to 35 nm are realized. The QD arrays are featured by perfect alignment and remarkably narrow size distribution. Also, such small periodicities allow the creation of three-dimensional QD crystals by vertical stacking of Si/Ge layers using very thin Si spacer layers. Simulations show that the distances between adjacent QDs are small enough for coupling of the electron states in lateral as well as vertical directions.
authors.affiliation: Laboratory for Micro- and Nanotechnology, Paul Scherrer Institute, 5232 Villigen, Switzerland.
authors.forename: C
authors.initials: C
authors.lastname: Dais
authors.forename: G
authors.initials: G
authors.lastname: Mussler
authors.forename: T
authors.initials: T
authors.lastname: Fromherz
authors.forename: E
authors.initials: E
authors.lastname: Müller
authors.forename: H H
authors.initials: HH
authors.lastname: Solak
authors.forename: D
authors.initials: D
authors.lastname: Grützmacher