title: Scaling of anomalous Hall effects in facing-target reactively sputtered Fe4N films.
abstract: The anomalous Hall effect (AHE) in the reactively sputtered epitaxial and polycrystalline γ'-Fe4N films is investigated systematically. The Hall resistivity is positive over the entire temperature range. The magnetization, carrier density and grain boundary scattering have a major impact on the AHE scaling law. The scaling exponent γ in the conventional scaling of ρAH ∝ ρ(γ)(xx) is larger than 2 in both the epitaxial and polycrystalline γ'-Fe4N films. Although γ > 2 has been found in heterogeneous systems due to the effects of the surface and interface scattering on AHE, γ > 2 is not expected in homogenous epitaxial systems. We demonstrated that γ > 2 results from residual resistivity (ρxx0) in γ'-Fe4N films. Furthermore, the side-jump and intrinsic mechanisms are dominant in both epitaxial and polycrystalline samples according to the proper scaling relation.
authors.affiliation: Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Faculty of Science, Tianjin University, Tianjin 300072, China. miwenbo@tju.edu.cn.
authors.forename: Y
authors.initials: Y
authors.lastname: Zhang
authors.forename: W B
authors.initials: WB
authors.lastname: Mi
authors.forename: X C
authors.initials: XC
authors.lastname: Wang
authors.forename: X X
authors.initials: XX
authors.lastname: Zhang