title: Remote p-type Doping in GaSb/InAs Core-shell Nanowires.
abstract: By performing first-principles calculation, we investigated the electronic properties of remotely p-type doping GaSb nanowire by a Zn-doped InAs shell. The results show that for bare zinc-blende (ZB) [111] GaSb/InAs core-shell nanowire the Zn p-type doped InAs shell donates free holes to the non-doped GaSb core nanowire without activation energy, significantly increasing the hole density and mobility of nanowire. For Zn doping in bare ZB [110] GaSb/InAs core-shell nanowire the hole states are compensated by surface states. We also studied the behaviors of remote p-type doing in two-dimensional (2D) GaSb/InAs heterogeneous slabs, and confirmed that the orientation of nanowire side facet is a key factor for achieving high efficient remote p-type doping.
authors.affiliation: Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China.
authors.forename: Feng
authors.initials: F
authors.lastname: Ning
authors.affiliation: Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China.
authors.forename: Li-Ming
authors.initials: LM
authors.lastname: Tang
authors.affiliation: Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China.
authors.forename: Yong
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China.
authors.forename: Ke-Qiu
authors.initials: KQ
authors.lastname: Chen