title: Low-Dimensional Structure Vacuum-Ultraviolet-Sensitive (λ < 200 nm) Photodetector with Fast-Response Speed Based on High-Quality AlN Micro/Nanowire.
abstract: A low-dimensional-structure vacuum-ultraviolet-sensitive photodetector based on high-quality aluminum nitride (AlN) micro-/nanowires is reported. This work, for the first time, demonstrates that a semiconductor nanostructure can be applied in vacuum-ultraviolet (VUV) photon detection and opens a way for developing diminutive, power-saving, and low-cost VUV materials and sensors that can be potentially applied in geospace sciences and solar-terrestrial physics.
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, 510275, P. R. China.
authors.forename: Wei
authors.initials: W
authors.lastname: Zheng
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, 510275, P. R. China.
authors.forename: Feng
authors.initials: F
authors.lastname: Huang
authors.affiliation: Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China.
authors.forename: Ruisheng
authors.initials: R
authors.lastname: Zheng
authors.affiliation: Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China.
authors.forename: Honglei
authors.initials: H
authors.lastname: Wu
keywords: AlN micro/nanowire; fast responses; low-dimensional photodetectors; vacuum-ultraviolet detection