title: Ultraviolet photoconductive devices with an n-GaN nanorod-graphene hybrid structure synthesized by metal-organic chemical vapor deposition.
abstract: The superior photoconductive behavior of a simple, cost-effective n-GaN nanorod (NR)-graphene hybrid device structure is demonstrated for the first time. The proposed hybrid structure was synthesized on a Si (111) substrate using the high-quality graphene transfer method and the relatively low-temperature metal-organic chemical vapor deposition (MOCVD) process with a high V/III ratio to protect the graphene layer from thermal damage during the growth of n-GaN nanorods. Defect-free n-GaN NRs were grown on a highly ordered graphene monolayer on Si without forming any metal-catalyst or droplet seeds. The prominent existence of the undamaged monolayer graphene even after the growth of highly dense n-GaN NRs, as determined using Raman spectroscopy and high-resolution transmission electron microscopy (HR-TEM), facilitated the excellent transport of the generated charge carriers through the photoconductive channel. The highly matched n-GaN NR-graphene hybrid structure exhibited enhancement in the photocurrent along with increased sensitivity and photoresponsivity, which were attributed to the extremely low carrier trap density in the photoconductive channel.
authors.affiliation: Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Engineering College, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Baekje-daero 567, Jeonju 561-756, Republic of Korea.
authors.forename: San
authors.initials: S
authors.lastname: Kang
authors.affiliation: Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Engineering College, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Baekje-daero 567, Jeonju 561-756, Republic of Korea.
authors.forename: Arjun
authors.initials: A
authors.lastname: Mandal
authors.affiliation: School of Materials Science and Engineering, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan 689-798, Republic of Korea.
authors.forename: Jae Hwan
authors.initials: JH
authors.lastname: Chu
authors.affiliation: Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Engineering College, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Baekje-daero 567, Jeonju 561-756, Republic of Korea.
authors.forename: Ji-Hyeon
authors.initials: JH
authors.lastname: Park
authors.affiliation: School of Materials Science and Engineering, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan 689-798, Republic of Korea.
authors.forename: Soon-Yong
authors.initials: SY
authors.lastname: Kwon
authors.affiliation: Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Engineering College, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Baekje-daero 567, Jeonju 561-756, Republic of Korea.
authors.forename: Cheul-Ro
authors.initials: CR
authors.lastname: Lee