title: Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p-n homojunctions by electrospinning.
abstract: La-doped p-type ZnO nanofibers were successfully synthesized by electrospinning, followed by calcination. The microstructure and morphology of the La-doped ZnO nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The field effect curve of individual nanofibers confirms that the resulting La-doped ZnO fibers are p-type semiconductors. The doping mechanism is discussed. Furthermore, crossed p-n homojunction nanofibers were also prepared based on electrospun La-doped p-type ZnO and n-type pure ZnO fibers. The current-voltage curve shows the typical rectifying characteristic of a p-n homojunction device. The turn-on voltage appears at about 2.5 V under the forward bias and the reverse current is impassable.
authors.affiliation: College of Physics & Collaborative Innovation Center for Low-Dimensional Nanomaterials and Optoelectronic Devices, Qingdao University, Qingdao 266071, China. yunze.long@163.com hongdi_zhang@163.com.
authors.forename: H D
authors.initials: HD
authors.lastname: Zhang
authors.forename: M
authors.initials: M
authors.lastname: Yu
authors.forename: J C
authors.initials: JC
authors.lastname: Zhang
authors.forename: C H
authors.initials: CH
authors.lastname: Sheng
authors.forename: X
authors.initials: X
authors.lastname: Yan
authors.forename: W P
authors.initials: WP
authors.lastname: Han
authors.forename: Y C
authors.initials: YC
authors.lastname: Liu
authors.forename: S
authors.initials: S
authors.lastname: Chen
authors.forename: G Z
authors.initials: GZ
authors.lastname: Shen
authors.forename: Y Z
authors.initials: YZ
authors.lastname: Long