title: Deep ultraviolet laser direct write for patterning sol-gel InGaZnO semiconducting micro/nanowires and improving field-effect mobility.
abstract: Deep-UV (DUV) laser was used to directly write indium-gallium-zinc-oxide (IGZO) precursor solution and form micro and nanoscale patterns. The directional DUV laser beam avoids the substrate heating and suppresses the diffraction effect. A IGZO precursor solution was also developed to fulfill the requirements for direct photopatterning and for achieving semi-conducting properties with thermal annealing at moderate temperature. The DUV-induced crosslinking of the starting material allows direct write of semi-conducting channels in thin-film transistors but also it improves the field-effect mobility and surface roughness. Material analysis has been carried out by XPS, FTIR, spectroscopic ellipsometry and AFM and the effect of DUV on the final material structure is discussed. The DUV irradiation step results in photolysis and a partial condensation of the inorganic network that freezes the sol-gel layer in a homogeneous distribution, lowering possibilities of thermally induced reorganization at the atomic scale. Laser irradiation allows high-resolution photopatterning and high-enough field-effect mobility, which enables the easy fabrication of oxide nanowires for applications in solar cell, display, flexible electronics, and biomedical sensors.
authors.affiliation: Department of Photonics and Institute of Electro-Optics, National Chiao Tung University, 1001 Ta Hsueh Rd., 300 HsinChu, Taiwan.
authors.forename: Hung-Cheng
authors.initials: HC
authors.lastname: Lin
authors.affiliation: Institut de Science des Matériaux de Mulhouse (IS2M), CNRS - UMR 7361, Université de Haute Alsace, 15 rue Jean Starcky, Mulhouse, France.
authors.forename: Fabrice
authors.initials: F
authors.lastname: Stehlin
authors.affiliation: Institut de Science des Matériaux de Mulhouse (IS2M), CNRS - UMR 7361, Université de Haute Alsace, 15 rue Jean Starcky, Mulhouse, France.
authors.forename: Olivier
authors.initials: O
authors.lastname: Soppera
authors.affiliation: Department of Photonics and Institute of Electro-Optics, National Chiao Tung University, 1001 Ta Hsueh Rd., 300 HsinChu, Taiwan.
authors.forename: Hsiao-Wen
authors.initials: HW
authors.lastname: Zan
authors.affiliation: Department of Photonics and Institute of Electro-Optics, National Chiao Tung University, 1001 Ta Hsueh Rd., 300 HsinChu, Taiwan.
authors.forename: Chang-Hung
authors.initials: CH
authors.lastname: Li
authors.affiliation: Institut de Science des Matériaux de Mulhouse (IS2M), CNRS - UMR 7361, Université de Haute Alsace, 15 rue Jean Starcky, Mulhouse, France.
authors.forename: Fernand
authors.initials: F
authors.lastname: Wieder
authors.affiliation: Institut de Science des Matériaux de Mulhouse (IS2M), CNRS - UMR 7361, Université de Haute Alsace, 15 rue Jean Starcky, Mulhouse, France.
authors.forename: Arnaud
authors.initials: A
authors.lastname: Ponche
authors.affiliation: Institut de Science des Matériaux de Mulhouse (IS2M), CNRS - UMR 7361, Université de Haute Alsace, 15 rue Jean Starcky, Mulhouse, France.
authors.forename: Dominique
authors.initials: D
authors.lastname: Berling
authors.affiliation: Department of Photonics and Institute of Electro-Optics, National Chiao Tung University, 1001 Ta Hsueh Rd., 300 HsinChu, Taiwan.
authors.forename: Bo-Hung
authors.initials: BH
authors.lastname: Yeh
authors.affiliation: Department of Photonics and Institute of Electro-Optics, National Chiao Tung University, 1001 Ta Hsueh Rd., 300 HsinChu, Taiwan.
authors.forename: Kuan-Hsun
authors.initials: KH
authors.lastname: Wang