title: Enhanced Performance of Polymeric Bulk Heterojunction Solar Cells via Molecular Doping with TFSA.
abstract: Organic solar cells based on bis(trifluoromethanesulfonyl)amide (TFSA, [CF3SO2]2NH) bulk doped poly[N-9''-hepta-decanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole) (PCDTBT):C71-butyric acid methyl ester (PC71BM) were fabricated to study the effect of molecular doping. By adding TFSA (0.2-0.8 wt %, TFSA to PCDTBT) in the conventional PCDTBT:PC71BM blends, we found that the hole mobility was increased with the reduced series resistance in photovoltaic devices. The p-doping effect of TFSA was confirmed by photoemission spectroscopy that the Fermi level of doped PCDTBT shifts downward to the HOMO level and it results in a larger internal electrical field at the donor/acceptor interface for more efficient charge transfer. Moreover, the doping effect was also confirmed by charge modulated electroabsorption spectroscopy (CMEAS), showing that there are additional polaron signals in the sub-bandgap region in the doped thin films. With decreased series resistance, the open-circuit voltage (Voc) was increased from 0.85 to 0.91 V and the fill factor (FF) was improved from 60.7% to 67.3%, resulting in a largely enhanced power conversion efficiency (PCE) from 5.39% to 6.46%. Our finding suggests the molecular doping by TFSA can be a facile approach to improve the electrical properties of organic materials for future development of organic photovoltaic devices (OPVs).
authors.affiliation: †Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong SAR, P. R. China.
authors.forename: Yubin
authors.initials: Y
authors.lastname: Xiao
authors.affiliation: †Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong SAR, P. R. China.
authors.forename: Han
authors.initials: H
authors.lastname: Wang
authors.affiliation: †Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong SAR, P. R. China.
authors.forename: Shuang
authors.initials: S
authors.lastname: Zhou
authors.affiliation: †Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong SAR, P. R. China.
authors.forename: Keyou
authors.initials: K
authors.lastname: Yan
authors.affiliation: ‡Department of Physics and Materials Science, The City University of Hong Kong, Kowloon Tong, Hong Kong SAR, P. R. China.
authors.forename: Zhiqiang
authors.initials: Z
authors.lastname: Guan
authors.affiliation: ‡Department of Physics and Materials Science, The City University of Hong Kong, Kowloon Tong, Hong Kong SAR, P. R. China.
authors.forename: Sai-Wing
authors.initials: SW
authors.lastname: Tsang
authors.affiliation: †Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong SAR, P. R. China.
authors.forename: Jianbin
authors.initials: J
authors.lastname: Xu
keywords: Fermi level; TFSA doping; carrier mobility; charge transfer; polymer solar cells