title: Bistable electrical switching and nonvolatile memory effect in carbon nanotube-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) composite films.
abstract: The electrical conductance switching behavior and nonvolatile memory effects in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)
  PSS and single-wall carbon nanotubes (SWCNTs) composite thin films have been investigated. The effect of doping level on electrical conductance switching behavior of an indium tin oxide/
  PSS + SWCNTs/aluminum (ITO/PEDOT:PSS + SWCNTs/Al) sandwich structure has been reported. The ITO/(PEDOT:PSS + SWCNTs)/Al devices show current bistability. Moreover, the ON/OFF state current ratio is in an extent of 10(2)-10(4). The OFF state current increased with the decreasing SWCNTs content in the composite film, and the ON/OFF state current ratio of the device increases with the increase in SWCNTs content of the composite film. Thus, by varying the doping level of SWCNTs in
  PSS composite thin films, the electrical conductance switching behavior of ITO/PEDOT:PSS + SWCNTs/Al can be modulated in a controlled manner.
authors.affiliation: HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China. wendianzhong@hlju.edu.cn.
authors.forename: Yanmei
authors.initials: Y
authors.lastname: Sun
authors.forename: Lei
authors.initials: L
authors.lastname: Li
authors.forename: Dianzhong
authors.initials: D
authors.lastname: Wen
authors.forename: Xuduo
authors.initials: X
authors.lastname: Bai
authors.forename: Gang
authors.initials: G
authors.lastname: Li