title: The effect of sulfur on the electrical properties of S and N co-doped ZnO thin films: experiment and first-principles calculations.
abstract: P-type sulphur-nitrogen (S-N) co-doped ZnO thin films are deposited and the effect of sulphur on the electrical properties is discussed. First-principles calculations indicate that the structure is most stable when the S atom is close to the N atom in the (0002) plane, implying that dual-doped ZnO is relatively feasible to approach. The partial density of states of S-N co-doped ZnO shows that the S impurity plays a vital role in forming the p-type conductivity.
authors.affiliation: Zhejiang University, School of Materials Science and Engineering, Hangzhou, Zhejiang, China. zlp1@zju.edu.cn.
authors.forename: Wenzhe
authors.initials: W
authors.lastname: Niu
authors.forename: Hongbin
authors.initials: H
authors.lastname: Xu
authors.forename: Yanmin
authors.initials: Y
authors.lastname: Guo
authors.forename: Yaguang
authors.initials: Y
authors.lastname: Li
authors.forename: Zhizhen
authors.initials: Z
authors.lastname: Ye
authors.forename: Liping
authors.initials: L
authors.lastname: Zhu