title: Cu mesh for flexible transparent conductive electrodes.
abstract: Copper electrodes with a micromesh/nanomesh structure were fabricated on a polyimide substrate using UV lithography and wet etching to produce flexible transparent conducting electrodes (TCEs). Well-defined mesh electrodes were realized through the use of high-quality Cu thin films. The films were fabricated using radio-frequency (RF) sputtering with a single-crystal Cu target--a simple but innovative approach that overcame the low oxidation resistance of ordinary Cu. Hybrid Cu mesh electrodes were fabricated by adding a capping layer of either ZnO or Al-doped ZnO. The sheet resistance and the transmittance of the electrode with an Al-doped ZnO capping layer were 6.197 ohm/sq and 90.657%, respectively, and the figure of merit was 60.502 × 10(-3)/ohm, which remained relatively unchanged after thermal annealing at 200 °C and 1,000 cycles of bending. This fabrication technique enables the mass production of large-area flexible TCEs, and the stability and high performance of Cu mesh hybrid electrodes in harsh environments suggests they have strong potential for application in smart displays and solar cells.
authors.affiliation: Department of Cogno-Mechatronics Engineering, Pusan National University, Miryang, 627-706 (Republic of Korea).
authors.forename: Won-Kyung
authors.initials: WK
authors.lastname: Kim
authors.affiliation: Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742 (United States).
authors.forename: Seunghun
authors.initials: S
authors.lastname: Lee
authors.affiliation: Department of Nanofusion Engineering, Pusan National University, Busan, 609-735 (Republic of Korea).
authors.forename: Duck
authors.initials: D
authors.lastname: Hee Lee
authors.affiliation: Department of Cogno-Mechatronics Engineering, Pusan National University, Miryang, 627-706 (Republic of Korea).|Department of Nanofusion Engineering, Pusan National University, Busan, 609-735 (Republic of Korea).
authors.forename: In
authors.initials: I
authors.lastname: Hee Park
authors.affiliation: Busan Center, Korea Basic Science Institute, Busan, 618-230 (Republic of Korea).
authors.forename: Jong
authors.initials: J
authors.lastname: Seong Bae
authors.affiliation: KAIST Analysis Center for Research Advancement, Daejeon, 305-701 (Republic of Korea).
authors.forename: Tae
authors.initials: T
authors.lastname: Woo Lee
authors.affiliation: Division of General Studies, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 689-798 (Republic of Korea).
authors.forename: Ji-Young
authors.initials: JY
authors.lastname: Kim
authors.affiliation: Department of Cogno-Mechatronics Engineering, Pusan National University, Miryang, 627-706 (Republic of Korea).
authors.forename: Ji
authors.initials: J
authors.lastname: Hun Park
authors.affiliation: Frontier in Extreme Physics, Korea Research Institute of Standards and Science, Daejeon, 305-340, (Republic of Korea).
authors.forename: Yong
authors.initials: Y
authors.lastname: Chan Cho
authors.affiliation: Division of General Studies, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 689-798 (Republic of Korea).
authors.forename: Chae
authors.initials: C
authors.lastname: Ryong Cho
authors.affiliation: Department of Cogno-Mechatronics Engineering, Pusan National University, Miryang, 627-706 (Republic of Korea).
authors.forename: Se-Young
authors.initials: SY
authors.lastname: Jeong