title: Large scale fabrication of well-aligned CdS/p-Si shell/core nanowire arrays for photodetectors using solution methods.
abstract: We report a facile approach for the preparation of the vertically aligned, large scale CdS/p-Si shell/core nanowire heterojunction arrays based on successive ionic layer adsorption and reaction deposition. The results indicate that the rectifying characteristics of CdS/Si shell/core nanowire arrays can be tailored by changing the number of SILAR cycles, and the CdS/Si shell-core nanowire heterojunctions have good photo-sensitivity (the ratio of photocurrent to dark current could reach 14.96 at -1 V reverse bias) under AM 1.5 (1 Sun) illumination. Furthermore, the electron transport mechanism across the CdS/Si nano-heterojunctions is also discussed in detail. This reported CdS/p-Si shell/core nanowire structure offers a generic approach for the integration of new functional materials for photo-electronics applications.
authors.affiliation: College of Physics & Electrics Engineering, Henan Normal University, Henan Key Laboratory of Photovoltaic Materials, Xinxiang 453007, China. jiangyurong@whut.edu.cn xiacongxin@htu.cn.
authors.forename: Yurong
authors.initials: Y
authors.lastname: Jiang
authors.forename: Chen
authors.initials: C
authors.lastname: Li
authors.forename: Weiwei
authors.initials: W
authors.lastname: Cao
authors.forename: Yanrong
authors.initials: Y
authors.lastname: Jiang
authors.forename: Shuying
authors.initials: S
authors.lastname: Shang
authors.forename: Congxin
authors.initials: C
authors.lastname: Xia