title: Magnetic In x Ga 1 - x N nanowires at room temperature using Cu dopant and annealing.
abstract: Single-crystal, Cu-doped In x Ga1 - x N nanowires were grown on GaN/Al2O3 substrates via a vapor-liquid-solid (VLS) mechanism using Ni/Au bi-catalysts. The typical diameter of the Cu:In x Ga1 - x N nanowires was 80 to 150 nm, with a typical length of hundreds of micrometers. The as-grown nanowires exhibited diamagnetism. After annealing, the nanowires exhibited ferromagnetism with saturation magnetic moments higher than 0.8 μB (1 μB × 10(-24) Am(2)) per Cu atom at room temperature by the measurements using a superconducting quantum interference device (SQUID) magnetometer. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L 2,3-edges indicated that the doped Cu had a local magnetic moment and that its electronic configuration was mainly 3d (9). It possessed a small trivalent component, and thus, the n-type behavior of electrical property is measured at room temperature.
authors.affiliation: Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749, Republic of Korea, younhopark@yonsei.ac.kr.
authors.forename: Youn Ho
authors.initials: YH
authors.lastname: Park
authors.forename: Ryong
authors.initials: R
authors.lastname: Ha
authors.forename: Tea-Eon
authors.initials: TE
authors.lastname: Park
authors.forename: Sung Wook
authors.initials: SW
authors.lastname: Kim
authors.forename: Dongjea
authors.initials: D
authors.lastname: Seo
authors.forename: Heon-Jin
authors.initials: HJ
authors.lastname: Choi