title: CdSe Nanowire-Based Flexible Devices: Schottky Diodes, Metal-Semiconductor Field-Effect Transistors, and Inverters.
abstract: Novel CdSe nanowire (NW)-based flexible devices, including Schottky diodes, metal-semiconductor field-effect transistors (MESFETs), and inverters, have been fabricated and investigated. The turn-on voltage of a typical Schottky diode is about 0.7 V, and the rectification ratio is larger than 1 × 10(7). The threshold voltage, on/off current ratio, subthreshold swing, and peak transconductance of a typical MESFET are about -0.3 V, 4 × 10(5), 78 mV/dec, and 2.7 μS, respectively. The inverter, constructed with two MESFETs, exhibits clear inverting behavior with the gain to be about 28, 34, and 38, at the supply voltages (V(DD)) of 3, 5, and 7 V, respectively. The inverter also shows good dynamic behavior. The rising and falling times of the output signals are about 0.18 and 0.09 ms, respectively, under 1000 Hz square wave signals input. The performances of the flexible devices are stable and reliable under different bending conditions. Our work demonstrates these flexible NW-based Schottky diodes, MESFETs, and inverters are promising candidate components for future portable transparent nanoelectronic devices.
authors.affiliation: †State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China.
authors.forename: Weifeng
authors.initials: W
authors.lastname: Jin
authors.affiliation: †State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China.
authors.forename: Kun
authors.initials: K
authors.lastname: Zhang
authors.affiliation: †State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China.
authors.forename: Zhiwei
authors.initials: Z
authors.lastname: Gao
authors.affiliation: †State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China.
authors.forename: Yanping
authors.initials: Y
authors.lastname: Li
authors.affiliation: †State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China.
authors.forename: Li
authors.initials: L
authors.lastname: Yao
authors.affiliation: †State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China.
authors.forename: Yilun
authors.initials: Y
authors.lastname: Wang
authors.affiliation: †State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China.|‡Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.
authors.forename: Lun
authors.initials: L
authors.lastname: Dai
keywords: MESFETs; Schottky diodes; flexible; inverters; nanowires