title: Mid-infrared passively switched pulsed dual wavelength Ho(3+)-doped fluoride fiber laser at 3 μm and 2 μm.
abstract: Cascade transitions of rare earth ions involved in infrared host fiber provide the potential to generate dual or multiple wavelength lasing at mid-infrared region. In addition, the fast development of saturable absorber (SA) towards the long wavelengths motivates the realization of passively switched mid-infrared pulsed lasers. In this work, by combing the above two techniques, a new phenomenon of passively Q-switched ~3 μm and gain-switched ~2 μm pulses in a shared cavity was demonstrated with a Ho(3+)-doped fluoride fiber and a specifically designed semiconductor saturable absorber (SESAM) as the SA. The repetition rate of ~2 μm pulses can be tuned between half and same as that of ~3 μm pulses by changing the pump power. The proposed method here will add new capabilities and more flexibility for generating mid-infrared multiple wavelength pulses simultaneously that has important potential applications for laser surgery, material processing, laser radar, and free-space communications, and other areas.
authors.affiliation: 1] State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China [2] Institute of Photonic and Technology (AIPT), Aston University, Birmingham, UK [3] Jiangsu Key Laboratory of Medical Optics, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou 215163, China.
authors.forename: Jianfeng
authors.initials: J
authors.lastname: Li
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China.
authors.forename: Hongyu
authors.initials: H
authors.lastname: Luo
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China.
authors.forename: Lele
authors.initials: L
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China.
authors.forename: Yong
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Institute of Photonic and Technology (AIPT), Aston University, Birmingham, UK.
authors.forename: Zhijun
authors.initials: Z
authors.lastname: Yan
authors.affiliation: Institute of Photonic and Technology (AIPT), Aston University, Birmingham, UK.
authors.forename: Kaiming
authors.initials: K
authors.lastname: Zhou
authors.affiliation: Institute of Photonic and Technology (AIPT), Aston University, Birmingham, UK.
authors.forename: Lin
authors.initials: L
authors.lastname: Zhang
authors.affiliation: Institute of Photonic and Technology (AIPT), Aston University, Birmingham, UK.
authors.forename: Sergei K
authors.initials: SK
authors.lastname: Turistsyn