title: Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy.
abstract: Precise measurement and characterization of electrostatic potential structures and the concomitant electric fields at nanodimensions are essential to understand and control the properties of modern materials and devices. However, directly observing and measuring such local electric field information is still a major challenge in microscopy. Here, differential phase contrast imaging in scanning transmission electron microscopy with segmented type detector is used to image a p-n junction in a GaAs compound semiconductor. Differential phase contrast imaging is able to both clearly visualize and quantify the projected, built-in electric field in the p-n junction. The technique is further shown capable of sensitively detecting the electric field variations due to dopant concentration steps within both p-type and n-type regions. Through live differential phase contrast imaging, this technique can potentially be used to image the electromagnetic field structure of new materials and devices even under working conditions.
authors.affiliation: 1] Institute of Engineering Innovation, School of Engineering, The University of Tokyo, Yayoi 2-11-16, Bunkyo-ku, Tokyo 113-8656, Japan [2] Japan Science and Technology Agency, PRESTO, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan.
authors.forename: Naoya
authors.initials: N
authors.lastname: Shibata
authors.affiliation: School of Physics and Astronomy, Monash University, Victoria 3800, Australia.
authors.forename: Scott D
authors.initials: SD
authors.lastname: Findlay
authors.affiliation: Furukawa Electric Ltd., 2-4-3 Okano, Nishi-ku, Yokohama, 220-0073, Japan.
authors.forename: Hirokazu
authors.initials: H
authors.lastname: Sasaki
authors.affiliation: Institute of Engineering Innovation, School of Engineering, The University of Tokyo, Yayoi 2-11-16, Bunkyo-ku, Tokyo 113-8656, Japan.
authors.forename: Takao
authors.initials: T
authors.lastname: Matsumoto
authors.affiliation: JEOL Ltd., 1-2-3 Musashino, Akishima, Tokyo 196-8558, Japan.
authors.forename: Hidetaka
authors.initials: H
authors.lastname: Sawada
authors.affiliation: JEOL Ltd., 1-2-3 Musashino, Akishima, Tokyo 196-8558, Japan.
authors.forename: Yuji
authors.initials: Y
authors.lastname: Kohno
authors.affiliation: Furukawa Electric Ltd., 2-4-3 Okano, Nishi-ku, Yokohama, 220-0073, Japan.
authors.forename: Shinya
authors.initials: S
authors.lastname: Otomo
authors.affiliation: Furukawa Electric Ltd., 2-4-3 Okano, Nishi-ku, Yokohama, 220-0073, Japan.
authors.forename: Ryuichiro
authors.initials: R
authors.lastname: Minato
authors.affiliation: 1] Institute of Engineering Innovation, School of Engineering, The University of Tokyo, Yayoi 2-11-16, Bunkyo-ku, Tokyo 113-8656, Japan [2] Nanostructures Research Laboratory, Japan Fine Ceramic Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan.
authors.forename: Yuichi
authors.initials: Y
authors.lastname: Ikuhara