title: High mobility flexible graphene field-effect transistors and ambipolar radio-frequency circuits.
abstract: Field-effect transistors (GFETs) were fabricated on mechanically flexible substrates using chemical vapor deposition grown graphene. High current density (nearly 200 μA μm(-1)) with saturation, almost perfect ambipolar electron-hole behavior, high transconductance (120 μS μm(-1)) and good stability over 381 days were obtained. The average carrier mobility for holes (electrons) is 13,540 cm(2) V(-1) s(-1) (12,300 cm(2) V(-1) s(-1)) with the highest value over 24,000 cm(2) V(-1) s(-1) (20,000 cm(2) V(-1) s(-1)) obtained in flexible GFETs. Ambipolar radio-frequency circuits, frequency doubler, were constructed based on the high performed flexible GFET, which show record high output power spectra purity (∼97%) and high conversion gain of -13.6 dB. Bending measurements show the flexible GFETs are able to work under modest strain. These results show that flexible GFETs are a very promising option for future flexible radio-frequency electronics.
authors.affiliation: Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, P. R. China. liangxl@pku.edu.cn.
authors.forename: Yiran
authors.initials: Y
authors.lastname: Liang
authors.forename: Xuelei
authors.initials: X
authors.lastname: Liang
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Zhang
authors.forename: Wei
authors.initials: W
authors.lastname: Li
authors.forename: Xiaoye
authors.initials: X
authors.lastname: Huo
authors.forename: Lianmao
authors.initials: L
authors.lastname: Peng