title: Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates.
abstract: We report the study on formation and thermal annealing of InAs quantum dots grown by droplet epitaxy on GaAs (111)A surface. By following the changes in RHEED pattern, we found that InAs quantum dots arsenized at low temperature are lattice matched with GaAs substrate, becoming almost fully relaxed when substrate temperature is increased. Morphological characterizations performed by atomic force microscopy show that annealing process is able to change density and aspect ratio of InAs quantum dots and also to narrow size distribution.
authors.affiliation: L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, via Cozzi 55, Milano, I-20125, Italy, sergio.bietti@mater.unimib.it.
authors.forename: Sergio
authors.initials: S
authors.lastname: Bietti
authors.forename: Luca
authors.initials: L
authors.lastname: Esposito
authors.forename: Alexey
authors.initials: A
authors.lastname: Fedorov
authors.forename: Andrea
authors.initials: A
authors.lastname: Ballabio
authors.forename: Andrea
authors.initials: A
authors.lastname: Martinelli
authors.forename: Stefano
authors.initials: S
authors.lastname: Sanguinetti