title: Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping.
abstract: As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.
authors.affiliation: School of Electrical Engineering & Telecommunications, University of New South Wales; a.rossi@unsw.edu.au.
authors.forename: Alessandro
authors.initials: A
authors.lastname: Rossi
authors.affiliation: QCD Labs, COMP Centre of Excellence, Department of Applied Physics, Aalto University.
authors.forename: Tuomo
authors.initials: T
authors.lastname: Tanttu
authors.affiliation: School of Electrical Engineering & Telecommunications, University of New South Wales.
authors.forename: Fay E
authors.initials: FE
authors.lastname: Hudson
authors.affiliation: School of Electrical Engineering & Telecommunications, University of New South Wales.
authors.forename: Yuxin
authors.initials: Y
authors.lastname: Sun
authors.affiliation: QCD Labs, COMP Centre of Excellence, Department of Applied Physics, Aalto University.
authors.forename: Mikko
authors.initials: M
authors.lastname: Möttönen
authors.affiliation: School of Electrical Engineering & Telecommunications, University of New South Wales.
authors.forename: Andrew S
authors.initials: AS
authors.lastname: Dzurak
mesh_terms: D000535:Aluminum / Q000737:chemistry*; D000537:Aluminum Oxide / Q000737:chemistry*; D004583:Electrons; D004867:Equipment Design; D045663:Quantum Dots / Q000737:chemistry*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D055672:Static Electricity
chemical_list: D012822:Silicon Dioxide; D000535:Aluminum; D000537:Aluminum Oxide; D012825:Silicon