title: Impact of Random Dopant Fluctuations on the Electronic Properties of In(x)Ga(1-x)N/GaN Axial Nanowire Heterostructures.
abstract: We study the electronic properties of axial In(x)Ga(1-x)N/GaN nanowire heterostructures with randomly placed ionized donors. Our simulations are based on an eight-band k·p model and indicate large variations of both the ground state transition energy and the spatial distribution of the electron and hole charge density. We show that these variations are intrinsic to nanostructures containing ionized donors and that the presence of donors has important consequences for all nanowire-based light-emitting devices including single-photon emitters required for quantum computing and quantum cryptography.
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany.
authors.forename: Oliver
authors.initials: O
authors.lastname: Marquardt
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany.
authors.forename: Lutz
authors.initials: L
authors.lastname: Geelhaar
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany.
authors.forename: Oliver
authors.initials: O
authors.lastname: Brandt
keywords: InxGa1−xN; Nanowires; electronic structure; k·p formalism; random dopant fluctuations