title: Defect-enhanced void filling and novel filled phases of open-structure skutterudites.
abstract: We report the design of novel filled CoSb3 skutterudite phases based on a combination of filling and Sb-substituted Ga/In defects. Ga/In doped skutterudite phases with Li-, Nd-, and Sm-fillings can be formed via this strategy, which can have relatively wider ranges of carrier concentration than other conventional filled skutterudite phases.
authors.affiliation: State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, No. 1295 Dingxi Road, Shanghai 200050, China. lilyxi2006@mail.sic.ac.cn.
authors.forename: Lili
authors.initials: L
authors.lastname: Xi
authors.forename: Yuting
authors.initials: Y
authors.lastname: Qiu
authors.forename: Xun
authors.initials: X
authors.lastname: Shi
authors.forename: Wenqing
authors.initials: W
authors.lastname: Zhang
authors.forename: Lidong
authors.initials: L
authors.lastname: Chen
authors.forename: David J
authors.initials: DJ
authors.lastname: Singh
authors.forename: Jihui
authors.initials: J
authors.lastname: Yang