title: Facile Routes To Improve Performance of Solution-Processed Amorphous Metal Oxide Thin Film Transistors by Water Vapor Annealing.
abstract: Here, we report on a simple and high-rate oxidization method for producing solution-based compound mixtures of indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO) metal-oxide semiconductors (MOS) for thin-film transistor (TFT) applications. One of the issues for solution-based MOS fabrication is how to sufficiently oxidize the precursor in order to achieve high performance. As the oxidation rate of solution processing is lower than vacuum-based deposition such as sputtering, devices using solution-processed MOS exhibit relatively poorer performance. Therefore, we propose a method to prepare the metal-oxide precursor upon exposure to saturated water vapor in a closed volume for increasing the oxidization efficiency without requiring additional oxidizing agent. We found that the hydroxide rate of the MOS film exposed to water vapor is lower than when unexposed (≤18%). Hence, we successfully fabricated oxide TFTs with high electron mobility (27.9 cm(2)/V·s) and established a rapid process (annealing at 400 °C for 5 min) that is much shorter than the conventional as-deposited long-duration annealing (at 400 °C for 1 h) whose corresponding mobility is even lower (19.2 cm(2)/V·s).
authors.affiliation: †Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3 ga, Jung-gu, Seoul 100-715, South Korea.
authors.forename: Won-Tae
authors.initials: WT
authors.lastname: Park
authors.affiliation: ‡Advanced Materials Research Institute, Samsung Fine Chemicals Co., Ltd., Suwon, Gyeongi 443-803, South Korea.
authors.forename: Inyoung
authors.initials: I
authors.lastname: Son
authors.affiliation: §Division of Physics and Semiconductor Science, Dongguk University, 26 Pil-dong, 3 ga, Jung-gu, Seoul 100-715, South Korea.
authors.forename: Hyun-Woo
authors.initials: HW
authors.lastname: Park
authors.affiliation: §Division of Physics and Semiconductor Science, Dongguk University, 26 Pil-dong, 3 ga, Jung-gu, Seoul 100-715, South Korea.
authors.forename: Kwun-Bum
authors.initials: KB
authors.lastname: Chung
authors.affiliation: †Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3 ga, Jung-gu, Seoul 100-715, South Korea.
authors.forename: Yong
authors.initials: Y
authors.lastname: Xu
authors.affiliation: ‡Advanced Materials Research Institute, Samsung Fine Chemicals Co., Ltd., Suwon, Gyeongi 443-803, South Korea.
authors.forename: Taegweon
authors.initials: T
authors.lastname: Lee
authors.affiliation: †Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3 ga, Jung-gu, Seoul 100-715, South Korea.
authors.forename: Yong-Young
authors.initials: YY
authors.lastname: Noh
keywords: indium gallium zinc oxide; indium zinc oxide; metal oxide semiconductor; solution process; thin-film transistor; water vapor annealing