title: Enhanced Shubnikov-De Haas Oscillation in Nitrogen-Doped Graphene.
abstract: N-doped graphene displays many interesting properties compared with pristine graphene, which makes it a potential candidate in many applications. Here, we report that the Shubnikov-de Haas (SdH) oscillation effect in graphene can be enhanced by N-doping. We show that the amplitude of the SdH oscillation increases with N-doping and reaches around 5k Ω under a field of 14 T at 10 K for highly N-doped graphene, which is over 1 order of magnitude larger than the value found for pristine graphene devices with the same geometry. Moreover, in contrast to the well-established standard Lifshitz-Kosevich theory, the amplitude of the SdH oscillation decreases linearly with increasing temperature and persists up to a temperature of 150 K. Our results also show that the magnetoresistance (MR) in N-doped graphene increases with increasing temperature. Our results may be useful for the application of N-doped graphene in magnetic devices.
authors.affiliation: †School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China.
authors.forename: Han-Chun
authors.initials: HC
authors.lastname: Wu
authors.affiliation: ‡KSU-Aramco Center, King Saud University, Riyadh 11451, Saudi Arabia.
authors.forename: Mourad
authors.initials: M
authors.lastname: Abid
authors.affiliation: †School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China.
authors.forename: Ye-Cun
authors.initials: YC
authors.lastname: Wu
authors.affiliation: †School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China.|§CRANN, School of Physics, Trinity College, University of Dublin, Dublin 2, Ireland.
authors.forename: Cormac Ó
authors.initials: CÓ
authors.lastname: Coileáin
authors.affiliation: §CRANN, School of Physics, Trinity College, University of Dublin, Dublin 2, Ireland.
authors.forename: Askar
authors.initials: A
authors.lastname: Syrlybekov
authors.affiliation: †School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China.
authors.forename: Jun Feng
authors.initials: JF
authors.lastname: Han
authors.affiliation: †School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China.
authors.forename: Cheng Lin
authors.initials: CL
authors.lastname: Heng
authors.affiliation: ⊥Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.
authors.forename: Huajun
authors.initials: H
authors.lastname: Liu
authors.affiliation: ‡KSU-Aramco Center, King Saud University, Riyadh 11451, Saudi Arabia.
authors.forename: Mohamed
authors.initials: M
authors.lastname: Abid
authors.affiliation: §CRANN, School of Physics, Trinity College, University of Dublin, Dublin 2, Ireland.
authors.forename: Igor
authors.initials: I
authors.lastname: Shvets
keywords: N-doped graphene; Shubnikov−de Haas oscillation; magnetoresistance; substitutional doping; two-dimensional transport