title: The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?
abstract: Influence of the energy relaxation of the channel electrons on the performance of AlGaN/GaN high-electron mobility transistors (HEMTs) has been investigated using self-consistent solution to the coupled Schrödinger equation and Poisson equation. The first quantized energy level in the inversion layer rises and the average channel electron density decreases when the channel electric field increases from 20 kV/cm to 120 kV/cm. This research also demonstrates that the energy relaxation of the channel electrons can lead to current collapse and suggests that the energy relaxation should be considered in modeling the performance of AlGaN/GaN HEMTs such as, the gate leakage current, threshold voltage, source-drain current, capacitance-voltage curve, etc.
authors.affiliation: School of Computer & Communication Engineering, University of Science & Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083, P. R. China.
authors.forename: Ling-Feng
authors.initials: LF
authors.lastname: Mao
authors.affiliation: School of Computer & Communication Engineering, University of Science & Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083, P. R. China.
authors.forename: Huan-Sheng
authors.initials: HS
authors.lastname: Ning
authors.affiliation: Institute of Microelectronics, Peking University, 100871, Beijing, P. R. China.
authors.forename: Jin-Yan
authors.initials: JY
authors.lastname: Wang
mesh_terms: D017607:Aluminum Compounds / Q000737:chemistry*; D004560:Electricity; D004581:Electronics / Q000295:instrumentation; D004583:Electrons; D005708:Gallium / Q000737:chemistry*; D006801:Humans; D014173:Transistors, Electronic
chemical_list: D017607:Aluminum Compounds; C513700:aluminum gallium nitride; D005708:Gallium