title: Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams.
abstract: Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain.
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, South Korea.
authors.forename: Min-Woo
authors.initials: MW
authors.lastname: Kim
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, South Korea.
authors.forename: Wan-Gil
authors.initials: WG
authors.lastname: Jung
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, South Korea.
authors.lastname: Hyun-Cho
authors.affiliation: Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 561-180, South Korea.
authors.forename: Tae-Sung
authors.initials: TS
authors.lastname: Bae
authors.affiliation: Department of Chemistry, Chung-Ang University, 84 Heukseok-ro, Dongjak-gu, Seoul 156-756, South Korea.
authors.forename: Sung-Jin
authors.initials: SJ
authors.lastname: Chang
authors.affiliation: School of Electrical Engineering and Computer Science, Department of Electronics, Yeungnam University, Gyeongsangbuk-do 712-749, South Korea.
authors.forename: Ja-Soon
authors.initials: JS
authors.lastname: Jang
authors.affiliation: Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 561-180, South Korea.
authors.forename: Woong-Ki
authors.initials: WK
authors.lastname: Hong
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, South Korea.
authors.forename: Bong-Joong
authors.initials: BJ
authors.lastname: Kim