title: Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors.
abstract: Metal contacts to atomically thin two-dimensional (2D) crystal based FETs play a decisive role in determining their operation and performance. However, the effects of contacts on the switching behavior, field-effect mobility, and current saturation of monolayer MoS2 FETs have not been well explored and, hence, is the focus of this work. The dependence of contact resistance on the drain current is revealed by four-terminal-measurements. Without high-κ dielectric boosting, an electron mobility of 44 cm(2)/(V·s) has been achieved in a monolayer MoS2 FET on SiO2 substrate at room temperature. Velocity saturation is identified as the main mechanism responsible for the current saturation in back-gated monolayer MoS2 FETs at relatively higher carrier densities. Furthermore, for the first time, electron saturation velocity of monolayer MoS2 is extracted at high-field condition.
authors.affiliation: Department of Electrical and Computer Engineering, University of California , Santa Barbara, California 93106, United States.
authors.forename: Wei
authors.initials: W
authors.lastname: Liu
authors.affiliation: Department of Electrical and Computer Engineering, University of California , Santa Barbara, California 93106, United States.
authors.forename: Deblina
authors.initials: D
authors.lastname: Sarkar
authors.affiliation: Department of Electrical and Computer Engineering, University of California , Santa Barbara, California 93106, United States.
authors.forename: Jiahao
authors.initials: J
authors.lastname: Kang
authors.affiliation: Department of Electrical and Computer Engineering, University of California , Santa Barbara, California 93106, United States.
authors.forename: Wei
authors.initials: W
authors.lastname: Cao
authors.affiliation: Department of Electrical and Computer Engineering, University of California , Santa Barbara, California 93106, United States.
authors.forename: Kaustav
authors.initials: K
authors.lastname: Banerjee
keywords: 2D semiconductor; Schottky barrier; contact; current saturation; field-effect transistor; molybdenum disulfide; transition metal dichalcogenides