title: Electronic Biosensors Based on III-Nitride Semiconductors.
abstract: We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.
authors.affiliation: Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695; email: ivanisevic@ncsu.edu.
authors.forename: Ronny
authors.initials: R
authors.lastname: Kirste
authors.forename: Nathaniel
authors.initials: N
authors.lastname: Rohrbaugh
authors.forename: Isaac
authors.initials: I
authors.lastname: Bryan
authors.forename: Zachary
authors.initials: Z
authors.lastname: Bryan
authors.forename: Ramon
authors.initials: R
authors.lastname: Collazo
authors.forename: Albena
authors.initials: A
authors.lastname: Ivanisevic
mesh_terms: D017607:Aluminum Compounds / Q000737:chemistry*; D015374:Biosensing Techniques; D004581:Electronics; D005708:Gallium / Q000737:chemistry*; D006801:Humans; D012666:Semiconductors
chemical_list: D017607:Aluminum Compounds; C513700:aluminum gallium nitride; D005708:Gallium
keywords: biosensors; field-effect transistors; nitrides; semiconductors; surfaces