title: Homoepitaxial SrTiO3(111) Film with High Dielectric Performance and Atomically Well-Defined Surface.
abstract: The six-fold symmetry possessed by the (111) surfaces of perovskite oxides allows the epitaxial growth of novel quantum materials such as topological insulators. The dielectric SrTiO3(111) thin film is an ideal buffer layer, providing the readily tunability of charge density in gate-controlled structures. But the high-quality film growth is challenging due to its strong surface polarity as well as the difficulty of obtaining the chemical stoichiometry. Here we show that the layer-by-layer growth of homoepitaxial SrTiO3(111) thin films can be achieved in molecular beam epitaxy method by keeping the growing surface reconstructed. And the cation stoichiometry is optimized precisely with the reflective high energy electron diffraction as the feedback signal that changes sensitively to the variation of metal concentration during growth. With atomically well-defined surfaces, the SrTiO3(111) films show high dielectric performance with the charge density modulated in the range of 2 × 10(13)/cm(2) with the back gate voltage lower than 0.2 V. Methods of further broadening the range are also discussed.
authors.affiliation: 1] College of Physics, Optoelectronics and Energy &Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China [2] Beijing National Laboratory for Condensed Matter Physics &Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Liang
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics &Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Wentao
authors.initials: W
authors.lastname: Li
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics &Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Shuyuan
authors.initials: S
authors.lastname: Zhang
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics &Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Chaojing
authors.initials: C
authors.lastname: Lin
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics &Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Chao
authors.initials: C
authors.lastname: Li
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics &Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Yao
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics &Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Yongqing
authors.initials: Y
authors.lastname: Li
authors.affiliation: 1] College of Physics, Optoelectronics and Energy &Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China [2] College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China.
authors.forename: Hao
authors.initials: H
authors.lastname: Yang
authors.affiliation: 1] Beijing National Laboratory for Condensed Matter Physics &Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [2] Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.
authors.forename: Jiandong
authors.initials: J
authors.lastname: Guo