title: ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.
abstract: High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.
authors.affiliation: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China.
authors.forename: Qichang
authors.initials: Q
authors.lastname: Hu
authors.affiliation: State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, Fujian, 350002, People's Republic of China.
authors.forename: Yafeng
authors.initials: Y
authors.lastname: Li
authors.affiliation: 1] Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China [2] State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, Guangdong, 510275, People's Republic of China.
authors.forename: Feng
authors.initials: F
authors.lastname: Huang
authors.affiliation: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China.
authors.forename: Zhaojun
authors.initials: Z
authors.lastname: Zhang
authors.affiliation: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China.
authors.forename: Kai
authors.initials: K
authors.lastname: Ding
authors.affiliation: State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, Fujian, 350002, People's Republic of China.
authors.forename: Mingdeng
authors.initials: M
authors.lastname: Wei
authors.affiliation: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, People's Republic of China.
authors.forename: Zhang
authors.initials: Z
authors.lastname: Lin