title: Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio.
abstract: High-quality channel layer is required for next-generation flexible electronic devices. Graphene is a good candidate due to its high carrier mobility and unique ambipolar transport characteristics but typically shows a low on/off ratio caused by gapless band structure. Popularly investigated organic semiconductors, such as pentacene, suffer from poor carrier mobility. Here, we propose a graphene/pentacene channel layer with high-k ion-gel gate dielectric. The graphene/pentacene device shows both high on/off ratio and carrier mobility as well as excellent mechanical flexibility. Most importantly, it reveals ambipolar behaviors and related negative differential resistance, which are controlled by external bias. Therefore, our graphene/pentacene barristor with ion-gel gate dielectric can offer various flexible device applications with high performances.
authors.forename: Gwangtaek
authors.initials: G
authors.lastname: Oh
authors.forename: Jin-Soo
authors.initials: JS
authors.lastname: Kim
authors.forename: Ji Hoon
authors.initials: JH
authors.lastname: Jeon
authors.forename: EunA
authors.initials: E
authors.lastname: Won
authors.forename: Jong Wan
authors.initials: JW
authors.lastname: Son
authors.forename: Duk Hyun
authors.initials: DH
authors.lastname: Lee
authors.forename: Cheol Kyeom
authors.initials: CK
authors.lastname: Kim
authors.affiliation: ‡Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747, Korea.
authors.forename: Jingon
authors.initials: J
authors.lastname: Jang
authors.affiliation: ‡Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747, Korea.
authors.forename: Takhee
authors.initials: T
authors.lastname: Lee
authors.forename: Bae Ho
authors.initials: BH
authors.lastname: Park
keywords: flexible and ambipolar transistor; graphene/pentacene barristor; high mobility and on/off ratio; ion-gel gate dielectric; negative differential resistance