title: Physical model for high indium content InGaN/GaN self-assembled quantum dot ridge-waveguide lasers emitting at red wavelengths (λ ~ 630 nm).
abstract: We present a physical model for recently demonstrated high indium content self-assembled In0.4Ga0.6N/GaN quantum dot (QD)-based ridge-waveguide lasers emitting at red wavelengths. The strain distribution in the QD is calculated using linear elastic theory with the application of shrink-fit boundary condition at the InGaN/GaN material interface, and the electronic states are evaluated using a single-band effective mass Hamiltonian. A Schrödinger-Poisson self-consistent solver is used to describe the effect of charge screening under current injection. Our theoretical result shows a good match to the measured Hakki-Paoli gain spectrum. Combining the calculated gain spectrum and cavity properties, we have developed a device-level simulation to successfully explain the electrical and optical characteristics of this specific laser. Possible solutions to improving the device performance have been explored.
authors.forename: Guan-Lin
authors.initials: GL
authors.lastname: Su
authors.forename: Thomas
authors.initials: T
authors.lastname: Frost
authors.forename: Pallab
authors.initials: P
authors.lastname: Bhattacharya
authors.forename: John M
authors.initials: JM
authors.lastname: Dallesasse