title: Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite.
abstract: The monolithic integration of InAs(1-x)Sb(x) semiconductor nanowires on graphitic substrates holds enormous promise for cost-effective, high-performance, and flexible devices in optoelectronics and high-speed electronics. However, the growth of InAs(1-x)Sb(x) nanowires with high aspect ratio essential for device applications is extremely challenging due to Sb-induced suppression of axial growth and enhancement in radial growth. We report the realization of high quality, vertically aligned, nontapered and ultrahigh aspect ratio InAs(1-x)Sb(x) nanowires with Sb composition (xSb(%)) up to ∼12% grown by indium-droplet assisted molecular beam epitaxy on graphite substrate. Low temperature photoluminescence measurements show that the InAs(1-x)Sb(x) nanowires exhibit bright band-to-band related emission with a distinct redshift as a function of Sb composition providing further confirmation of successful Sb incorporation in as-grown nanowires. This study reveals that the graphite substrate is a more favorable platform for InAs(1-x)Sb(x) nanowires that could lead to hybrid heterostructures possessing potential device applications in optoelectronics.
authors.affiliation: †Physics Department, Lancaster University, Lancaster LA1 4YB, U.K.
authors.forename: E A
authors.initials: EA
authors.lastname: Anyebe
authors.affiliation: ‡Department of Physics, Warwick University, Coventry CV4 7AL, U.K.
authors.forename: A M
authors.initials: AM
authors.lastname: Sanchez
authors.affiliation: ‡Department of Physics, Warwick University, Coventry CV4 7AL, U.K.
authors.forename: S
authors.initials: S
authors.lastname: Hindmarsh
authors.affiliation: §National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, People's Republic of China.
authors.forename: X
authors.initials: X
authors.lastname: Chen
authors.affiliation: §National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, People's Republic of China.
authors.forename: J
authors.initials: J
authors.lastname: Shao
authors.affiliation: ∥Stephenson Institute for Renewable Energy and Department of Physics, University of Liverpool, Liverpool L69 7ZF, U.K.
authors.forename: M K
authors.initials: MK
authors.lastname: Rajpalke
authors.affiliation: ∥Stephenson Institute for Renewable Energy and Department of Physics, University of Liverpool, Liverpool L69 7ZF, U.K.
authors.forename: T D
authors.initials: TD
authors.lastname: Veal
authors.affiliation: †Physics Department, Lancaster University, Lancaster LA1 4YB, U.K.
authors.forename: B J
authors.initials: BJ
authors.lastname: Robinson
authors.affiliation: †Physics Department, Lancaster University, Lancaster LA1 4YB, U.K.
authors.forename: O
authors.initials: O
authors.lastname: Kolosov
authors.affiliation: ⊥Oxford Instruments, Tubney Woods, Abingdon OX13 5QX, U.K.
authors.forename: F
authors.initials: F
authors.lastname: Anderson
authors.affiliation: ⊥Oxford Instruments, Tubney Woods, Abingdon OX13 5QX, U.K.
authors.forename: R
authors.initials: R
authors.lastname: Sundaram
authors.affiliation: #Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.
authors.forename: Z M
authors.initials: ZM
authors.lastname: Wang
authors.affiliation: †Physics Department, Lancaster University, Lancaster LA1 4YB, U.K.
authors.forename: V
authors.initials: V
authors.lastname: Falko
authors.affiliation: †Physics Department, Lancaster University, Lancaster LA1 4YB, U.K.
authors.forename: Q
authors.initials: Q
authors.lastname: Zhuang
keywords: InAsSb; aspect ratio; graphene; graphite; molecular beam epitaxy; nanowire; self-catalyzed; van der Waals