title: Highly linear ring modulator from hybrid silicon and lithium niobate.
abstract: We present a highly linear ring modulator from the bonding of ion-sliced x-cut lithium niobate onto a silicon ring resonator. The third order intermodulation distortion spurious free dynamic range is measured to be 98.1 dB Hz(2/3) and 87.6 dB Hz(2/3) at 1 GHz and 10 GHz, respectively. The linearity is comparable to a reference lithium niobate Mach-Zehnder interferometer modulator operating at quadrature and over an order of magnitude greater than silicon ring modulators based on plasma dispersion effect. Compact modulators for analog optical links that exploit the second order susceptibility of lithium niobate on the silicon platform are envisioned.
authors.forename: Li
authors.initials: L
authors.lastname: Chen
authors.forename: Jiahong
authors.initials: J
authors.lastname: Chen
authors.forename: Jonathan
authors.initials: J
authors.lastname: Nagy
authors.forename: Ronald M
authors.initials: RM
authors.lastname: Reano