title: Band tail-induced photoluminescence broadening in heavily In-doped n-type ZnO nanowires.
abstract: We have demonstrated that photoluminescence (PL) is a non-damaging and powerful tool for the characterization of heavily-doped semiconductor nanostructures such as n-ZnO nanowires. The PL shows a redshift and a Gaussian-shaped low-energy wing, indicating a broadening mechanism governed by the impurity band. The electron concentration can be estimated from the PL linewidth.
authors.affiliation: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China. hphe@zju.edu.cn.
authors.forename: H P
authors.initials: HP
authors.lastname: He
authors.forename: Z
authors.initials: Z
authors.lastname: Wang
authors.forename: H F
authors.initials: HF
authors.lastname: Duan
authors.forename: Z Z
authors.initials: ZZ
authors.lastname: Ye