title: Lateral graphene p-n junctions formed by the graphene/MoS₂ hybrid interface.
abstract: Graphene/two-dimensional (2D) semiconductor heterostructures have been demonstrated to possess many advantages for electronic and optoelectronic devices. However, there are few reports about the utilization of a 2D semiconductor monolayer to tune the properties of graphene. Here, we report the fabrication and characterization of graphene p-n junctions based on graphene/MoS2 hybrid interfaces. Monolayered graphene across the monolayered MoS2 boundary is divided into n-type regions on the MoS2 and p-type regions on the SiO2 substrate. Such van der Waals heterostructure based graphene p-n junctions show good photoelectric properties. The photocurrent modulation of such devices by a single back gate is also demonstrated for the first time, which shows that the graphene on and off MoS2 regions have different responses to the gate voltage. Our results suggest that the atomic thin hybrid structure can remarkably extend the device applications.
authors.affiliation: State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, P.R. China. liaozm@pku.edu.cn.
authors.forename: Jie
authors.initials: J
authors.lastname: Meng
authors.forename: Hua-Ding
authors.initials: HD
authors.lastname: Song
authors.forename: Cai-Zhen
authors.initials: CZ
authors.lastname: Li
authors.forename: Yibo
authors.initials: Y
authors.lastname: Jin
authors.forename: Lei
authors.initials: L
authors.lastname: Tang
authors.forename: Dameng
authors.initials: D
authors.lastname: Liu
authors.forename: Zhi-Min
authors.initials: ZM
authors.lastname: Liao
authors.forename: Faxian
authors.initials: F
authors.lastname: Xiu
authors.forename: Da-Peng
authors.initials: DP
authors.lastname: Yu