title: A quinoxaline based N-heteroacene interfacial layer for efficient hole-injection in quantum dot light-emitting diodes.
abstract: A series of N-heterocyclic quinoxaline derivatives was successfully synthesized and applied as hole transport layers in quantum dot light-emitting diodes (QLEDs). By inducing sp(2) N-atoms into the quinoxaline backbone, the electron affinity of the obtained material was enhanced, and its optical properties and bandgap became tunable. Quinoxaline based N-heteroacenes show a narrow bandgap, high thermal stability, and aligned film morphology. The resulting N-heteroacene polymer based QLED exhibits superior performance to poly(9-vinylcarbazole) based QLED. This study presents a strategy towards the design of novel N-rich molecules for the fabrication of QLEDs with improved performance.
authors.affiliation: Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371. zhaoyanli@ntu.edu.sg.
authors.forename: Linyi
authors.initials: L
authors.lastname: Bai
authors.forename: Xuyong
authors.initials: X
authors.lastname: Yang
authors.forename: Chung Yen
authors.initials: CY
authors.lastname: Ang
authors.forename: Kim Truc
authors.initials: KT
authors.lastname: Nguyen
authors.forename: Tao
authors.initials: T
authors.lastname: Ding
authors.forename: Purnandhu
authors.initials: P
authors.lastname: Bose
authors.forename: Qiang
authors.initials: Q
authors.lastname: Gao
authors.forename: Amal Kumar
authors.initials: AK
authors.lastname: Mandal
authors.forename: Xiao Wei
authors.initials: XW
authors.lastname: Sun
authors.forename: Hilmi Volkan
authors.initials: HV
authors.lastname: Demir
authors.forename: Yanli
authors.initials: Y
authors.lastname: Zhao