title: Electrically pumped lasing from Ge Fabry-Perot resonators on Si.
abstract: Room temperature lasing from electrically pumped n-type doped Ge edge emitting devices has been observed. The edge emitter is formed by cleaving Si-Ge waveguide heterodiodes, providing optical feedback through a Fabry-Perot resonator. The electroluminescence spectra of the devices showed optical bleaching and intensity gain for wavelengths between 1660 nm and 1700 nm. This fits the theoretically predicted behavior for the n-type Ge material system. With further pulsed electrical injection of 500 kA/cm2it was possible to reach the lasing threshold for such edge emitters. Different lengths and widths of devices have been investigated in order to maintain best gain-absorption ratios.
authors.forename: Roman
authors.initials: R
authors.lastname: Koerner
authors.forename: Michael
authors.initials: M
authors.lastname: Oehme
authors.forename: Martin
authors.initials: M
authors.lastname: Gollhofer
authors.forename: Marc
authors.initials: M
authors.lastname: Schmid
authors.forename: Konrad
authors.initials: K
authors.lastname: Kostecki
authors.forename: Stefan
authors.initials: S
authors.lastname: Bechler
authors.forename: Daniel
authors.initials: D
authors.lastname: Widmann
authors.forename: Erich
authors.initials: E
authors.lastname: Kasper
authors.forename: Joerg
authors.initials: J
authors.lastname: Schulze