title: Selective p- and n-Doping of Colloidal PbSe Nanowires To Construct Electronic and Optoelectronic Devices.
abstract: We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead. By employing a patternable poly(methyl)methacrylate blocking layer, we define pn junctions in the nanowires along their length. We demonstrate integrated complementary metal-oxide semiconductor inverters in axially doped nanowires that have gains of 15 and a near full signal swing. We also show that these pn junction PbSe nanowire arrays form fast switching photodiodes with photocurrents that can be optimized in a gated-diode structure. Doping of the colloidal nanowires is compatible with device fabrication on flexible plastic substrates, promising a low-cost, solution-based route to high-performance nanowire devices.
authors.affiliation: ∥Department of Materials Science and Engineering, Korea University, Seoul 136-713, Republic of Korea.
authors.forename: Soong Ju
authors.initials: SJ
authors.lastname: Oh
authors.forename: Chawit
authors.initials: C
authors.lastname: Uswachoke
authors.forename: Tianshuo
authors.initials: T
authors.lastname: Zhao
authors.forename: Ji-Hyuk
authors.initials: JH
authors.lastname: Choi
authors.forename: Benjamin T
authors.initials: BT
authors.lastname: Diroll
authors.forename: Christopher B
authors.initials: CB
authors.lastname: Murray
authors.forename: Cherie R
authors.initials: CR
authors.lastname: Kagan
keywords: CMOS inverter; PbSe; colloidal nanowires; photodiode; pn junction; selective doping