title: Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes.
abstract: The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by the polarization of the ferroelectric poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] thin layer. FeFET devices exhibit both typical output property and obvious bistable operation. The hysteretic transfer characteristic was attributed to the electrical polarization of the ferroelectric layer which could be switched by a high enough gate voltage. FeFET devices demonstrated good memory performance and were expected to be used in both low power integrated circuit and flexible electronics.
authors.affiliation: Department of Materials Science, Fudan University, Shanghai, 200433, People's Republic of China, caoronggen@fudan.edu.cn.
authors.forename: Ronggen
authors.initials: R
authors.lastname: Cao
authors.forename: Gaoshan
authors.initials: G
authors.lastname: Huang
authors.forename: Zengfeng
authors.initials: Z
authors.lastname: Di
authors.forename: Guodong
authors.initials: G
authors.lastname: Zhu
authors.forename: Yongfeng
authors.initials: Y
authors.lastname: Mei