title: Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires.
abstract: Si nanowire (Si-NW) based thin-film transistors (TFTs) have been considered as a promising candidate for next-generation flexible and wearable electronics as well as sensor applications with high performance. Here, we have fabricated ambipolar Schottky-barrier (SB) TFTs consisting of a parallel array of Si-NWs and performed an in-depth study related to their electrical performance and operation mechanism through several electrical parameters extracted from the channel length scaling based method. Especially, the newly suggested current-voltage (I-V) contour map clearly elucidates the unique operation mechanism of the ambipolar SB-TFTs, governed by Schottky-junction between NiSi2 and Si-NW. Further, it reveals for the first-time in SB based FETs the important internal electrostatic coupling between the channel and externally applied voltages. This work provides helpful information for the realization of practical circuits with ambipolar SB-TFTs that can be transferred to different substrate technologies and applications.
authors.affiliation: †Namlab gGmbH, Nöthnitzer Strasse 64, 01187 Dresden, Germany.|‡Center for Advancing Electronics Dresden (CfAED), §Institute for Materials Science and Max Bergmann Center of Biomaterials, and ∥Chair for Nanoelectronic Materials, TU Dresden, 01062 Dresden, Germany.
authors.forename: Dae-Young
authors.initials: DY
authors.lastname: Jeon
authors.affiliation: †Namlab gGmbH, Nöthnitzer Strasse 64, 01187 Dresden, Germany.|‡Center for Advancing Electronics Dresden (CfAED), §Institute for Materials Science and Max Bergmann Center of Biomaterials, and ∥Chair for Nanoelectronic Materials, TU Dresden, 01062 Dresden, Germany.
authors.forename: Sebastian
authors.initials: S
authors.lastname: Pregl
authors.affiliation: †Namlab gGmbH, Nöthnitzer Strasse 64, 01187 Dresden, Germany.|‡Center for Advancing Electronics Dresden (CfAED), §Institute for Materials Science and Max Bergmann Center of Biomaterials, and ∥Chair for Nanoelectronic Materials, TU Dresden, 01062 Dresden, Germany.
authors.forename: So Jeong
authors.initials: SJ
authors.lastname: Park
authors.forename: Larysa
authors.initials: L
authors.lastname: Baraban
authors.affiliation: ‡Center for Advancing Electronics Dresden (CfAED), §Institute for Materials Science and Max Bergmann Center of Biomaterials, and ∥Chair for Nanoelectronic Materials, TU Dresden, 01062 Dresden, Germany.
authors.forename: Gianaurelio
authors.initials: G
authors.lastname: Cuniberti
authors.affiliation: †Namlab gGmbH, Nöthnitzer Strasse 64, 01187 Dresden, Germany.|‡Center for Advancing Electronics Dresden (CfAED), §Institute for Materials Science and Max Bergmann Center of Biomaterials, and ∥Chair for Nanoelectronic Materials, TU Dresden, 01062 Dresden, Germany.
authors.forename: Thomas
authors.initials: T
authors.lastname: Mikolajick
authors.affiliation: †Namlab gGmbH, Nöthnitzer Strasse 64, 01187 Dresden, Germany.|‡Center for Advancing Electronics Dresden (CfAED), §Institute for Materials Science and Max Bergmann Center of Biomaterials, and ∥Chair for Nanoelectronic Materials, TU Dresden, 01062 Dresden, Germany.
authors.forename: Walter M
authors.initials: WM
authors.lastname: Weber
keywords: Schottky barrier; Si nanowire; channel length scaling; current−voltage contour map; thin-film transistors