title: Intersubband Transition in GaN/InGaN Multiple Quantum Wells.
abstract: Utilizing the growth temperature controlled epitaxy, high quality GaN/In0.15Ga0.85N multiple quantum wells designed for intersubband transition (ISBT) as novel candidates in III-nitride infrared device applications have been experimentally realized for the first time. Photo-absorption originated from the ISBT has been successfully observed at infrared regime covering the 3-5 μm atmosphere window, where the central absorption wavelength is modulated by adjusting the quantum well width. With increasing the quantum well thickness, the ISBT center wave length blue shifts at thickness less than 2.8 nm and then redshifts with further increase of the well thickness. The non-monotonic trend is most likely due to the polarization induced asymmetric shape of the quantum wells.
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: G
authors.initials: G
authors.lastname: Chen
authors.affiliation: 1] State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China [2] Collaborative Innovation Center of Quantum Matter, Beijing, China.
authors.forename: X Q
authors.initials: XQ
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: X
authors.initials: X
authors.lastname: Rong
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: P
authors.initials: P
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: F J
authors.initials: FJ
authors.lastname: Xu
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: N
authors.initials: N
authors.lastname: Tang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Z X
authors.initials: ZX
authors.lastname: Qin
authors.affiliation: Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083, China.
authors.forename: Y H
authors.initials: YH
authors.lastname: Chen
authors.affiliation: 1] State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China [2] Collaborative Innovation Center of Quantum Matter, Beijing, China.
authors.forename: B
authors.initials: B
authors.lastname: Shen