title: Gigahertz Quantized Charge Pumping in Bottom-Gate-Defined InAs Nanowire Quantum Dots.
abstract: Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge pumping, that is, the controlled transport of individual electrons through an InAs NW quantum dot (QD) device at frequencies up to 1.3 GHz. The QD is induced electrostatically in the NW by a series of local bottom gates in a state of the art device geometry. A periodic modulation of a single gate is enough to obtain a dc current proportional to the frequency of the modulation. The dc bias, the modulation amplitude and the gate voltages on the local gates can be used to control the number of charges conveyed per cycle. Charge pumping in InAs NWs is relevant not only in metrology as a current standard, but also opens up the opportunity to investigate a variety of exotic states of matter, for example, Majorana modes, by single electron spectroscopy and correlation experiments.
authors.affiliation: †Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.
authors.forename: S
authors.initials: S
authors.lastname: d'Hollosy
authors.affiliation: †Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.
authors.forename: M
authors.initials: M
authors.lastname: Jung
authors.affiliation: †Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.
authors.forename: A
authors.initials: A
authors.lastname: Baumgartner
authors.affiliation: ‡Laboratory for Micro- and Nanotechnology, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland.
authors.forename: V A
authors.initials: VA
authors.lastname: Guzenko
authors.affiliation: §Center for Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen, Denmark.
authors.forename: M H
authors.initials: MH
authors.lastname: Madsen
authors.affiliation: §Center for Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen, Denmark.
authors.forename: J
authors.initials: J
authors.lastname: Nygård
authors.affiliation: †Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.
authors.forename: C
authors.initials: C
authors.lastname: Schönenberger
keywords: bottom gates; charge pumping; nanowires; nonequilibrium dynamics; radio frequency