title: Tm:KLu(WO(4))(2) microchip laser Q-switched by a graphene-based saturable absorber.
abstract: We report on the first Tm-doped double tungstate microchip laser Q-switched with graphene using a Tm:KLu(WO4)2crystal cut along the Ngdielectric axis. This laser generates a maximum average output power of 310 mW with a slope efficiency of 13%. At a repetition rate of 190 kHz the shortest pulses with 285 ns duration and 1.6 µJ energy are achieved.
authors.forename: Josep Maria
authors.initials: JM
authors.lastname: Serres
authors.forename: Pavel
authors.initials: P
authors.lastname: Loiko
authors.forename: Xavier
authors.initials: X
authors.lastname: Mateos
authors.forename: Konstantin
authors.initials: K
authors.lastname: Yumashev
authors.forename: Uwe
authors.initials: U
authors.lastname: Griebner
authors.forename: Valentin
authors.initials: V
authors.lastname: Petrov
authors.forename: Magdalena
authors.initials: M
authors.lastname: Aguiló
authors.forename: Francesc
authors.initials: F
authors.lastname: Díaz
mesh_terms: D065638:Absorption, Radiation; D006108:Graphite / Q000737:chemistry*; D007834:Lasers; D008027:Light; D008187:Lutetium / Q000737:chemistry*; D055095:Optics and Photonics / Q000295:instrumentation*; D013932:Thulium / Q000737:chemistry*; D017973:Tungsten Compounds / Q000737:chemistry*
chemical_list: D017973:Tungsten Compounds; D008187:Lutetium; D006108:Graphite; D013932:Thulium