title: Nonlinear diffraction in orientation-patterned semiconductors.
abstract: This work represents experimental demonstration of nonlinear diffraction in an orientation-patterned semiconducting material. By employing a new transverse geometry of interaction, three types of second-order nonlinear diffraction have been identified according to different configurations of quasi-phase matching conditions. Specifically, nonlinear Čerenkov diffraction is defined by the longitudinal quasi-phase matching condition, nonlinear Raman-Nath diffraction satisfies only the transverse quasi-phase matching condition, and nonlinear Bragg diffraction fulfils the full vectorial quasi-phase matching conditions. The study extends the concept of transverse nonlinear parametric interaction toward infrared frequency conversion in semiconductors. It also offers an effective nondestructive method to visualise and diagnose variations of second-order nonlinear coefficients inside semiconductors.
authors.forename: Pawel
authors.initials: P
authors.lastname: Karpinski
authors.forename: Xin
authors.initials: X
authors.lastname: Chen
authors.forename: Vladlen
authors.initials: V
authors.lastname: Shvedov
authors.forename: Cyril
authors.initials: C
authors.lastname: Hnatovsky
authors.forename: Arnaud
authors.initials: A
authors.lastname: Grisard
authors.forename: Eric
authors.initials: E
authors.lastname: Lallier
authors.forename: Barry
authors.initials: B
authors.lastname: Luther-Davies
authors.forename: Wieslaw
authors.initials: W
authors.lastname: Krolikowski
authors.forename: Yan
authors.initials: Y
authors.lastname: Sheng