title: Detection of highly conductive surface electron states in topological crystalline insulators Pb(1-x)SnxSe using laser terahertz radiation.
abstract: We suggest a method for detection of highly conductive surface electron states including topological ones. The method is based on measurements of the photoelectromagnetic effect using terahertz laser pulses. In contrast to conventional transport measurements, the method is not sensitive to the bulk conductivity. The method is demonstrated on an example of topological crystalline insulators Pb(1-x)SnxSe. It is shown that highly conductive surface electron states are present in Pb(1-x)SnxSe both in the inverse and direct electron energy spectrum.
authors.affiliation: Physics Department, M.V. Lomonosov Moscow State University, Moscow 119991, Russia.
authors.forename: S G
authors.initials: SG
authors.lastname: Egorova
authors.affiliation: Physics Department, M.V. Lomonosov Moscow State University, Moscow 119991, Russia.
authors.forename: V I
authors.initials: VI
authors.lastname: Chernichkin
authors.affiliation: Chemistry Department, M.V. Lomonosov Moscow State University, Moscow 119991, Russia.
authors.forename: L I
authors.initials: LI
authors.lastname: Ryabova
authors.affiliation: Physics Department, M.V. Lomonosov Moscow State University, Moscow 119991, Russia.
authors.forename: E P
authors.initials: EP
authors.lastname: Skipetrov
authors.affiliation: Chemistry Department, M.V. Lomonosov Moscow State University, Moscow 119991, Russia.
authors.forename: L V
authors.initials: LV
authors.lastname: Yashina
authors.affiliation: Faculty of Physics, University of Regensburg, Regensburg D-93040, Germany.
authors.forename: S N
authors.initials: SN
authors.lastname: Danilov
authors.affiliation: Faculty of Physics, University of Regensburg, Regensburg D-93040, Germany.
authors.forename: S D
authors.initials: SD
authors.lastname: Ganichev
authors.affiliation: 1] Physics Department, M.V. Lomonosov Moscow State University, Moscow 119991, Russia [2] P.N. Lebedev Physical Institute of RAS, Moscow 119991, Russia.
authors.forename: D R
authors.initials: DR
authors.lastname: Khokhlov