title: Realizing chemical codoping in TiO2.
abstract: We demonstrate experimentally a chemical codoping approach that would simultaneously narrow the band gap and control the band edge positions of TiO2 semiconductors. It is shown that a sequential doping scheme with nitrogen (N) leading the way, followed by phosphorus (P), is crucial for the incorporation of both N and P into the anion sites. Various characterization techniques confirm the formation of the N-P bonds, and as a consequence of chemical codoping, the band gap of TiO2 is reduced from 3.2 eV to 1.8 eV. The realization of chemical codoping could be an important step forward in improving the general performance of electronic and optoelectronic materials and devices.
authors.affiliation: School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China.
authors.forename: Fang
authors.initials: F
authors.lastname: Wang
authors.forename: Yi-Yang
authors.initials: YY
authors.lastname: Sun
authors.forename: John B
authors.initials: JB
authors.lastname: Hatch
authors.forename: Hui
authors.initials: H
authors.lastname: Xing
authors.forename: Xuechen
authors.initials: X
authors.lastname: Zhu
authors.forename: Hongwang
authors.initials: H
authors.lastname: Zhang
authors.forename: Xiaohong
authors.initials: X
authors.lastname: Xu
authors.forename: Hong
authors.initials: H
authors.lastname: Luo
authors.forename: S
authors.initials: S
authors.lastname: Perera
authors.forename: Shengbai
authors.initials: S
authors.lastname: Zhang
authors.forename: Hao
authors.initials: H
authors.lastname: Zeng