title: Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III-V photonics platform on silicon using a laboratory X-ray diffraction setup.
abstract: This study is carried out in the context of III-V semiconductor monolithic integration on silicon for optoelectronic device applications. X-ray diffraction is combined with atomic force microscopy and scanning transmission electron microscopy for structural characterization of GaP nanolayers grown on Si. GaP has been chosen as the interfacial layer, owing to its low lattice mismatch with Si. But, microtwins and antiphase boundaries are still difficult to avoid in this system. Absolute quantification of the microtwin volume fraction is used for optimization of the growth procedure in order to eliminate these defects. Lateral correlation lengths associated with mean antiphase boundary distances are then evaluated. Finally, optimized growth conditions lead to the annihilation of antiphase domains within the first 10 nm.
authors.affiliation: UMR FOTON, CNRS, INSA Rennes, Rennes, F35708, France.
authors.forename: Yan
authors.initials: Y
authors.lastname: Ping Wang
authors.affiliation: UMR FOTON, CNRS, INSA Rennes, Rennes, F35708, France.
authors.forename: Antoine
authors.initials: A
authors.lastname: Letoublon
authors.affiliation: Universite Grenoble Alpes, Institu NEEL, Grenoble, F-38000, France ; CNRS, Institut NEEL, Grenoble, F-38042, France.
authors.forename: Tra
authors.initials: T
authors.lastname: Nguyen Thanh
authors.affiliation: Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis, 91460, France.
authors.forename: Mounib
authors.initials: M
authors.lastname: Bahri
authors.affiliation: Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis, 91460, France.
authors.forename: Ludovic
authors.initials: L
authors.lastname: Largeau
authors.affiliation: Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis, 91460, France.
authors.forename: Gilles
authors.initials: G
authors.lastname: Patriarche
authors.affiliation: UMR FOTON, CNRS, INSA Rennes, Rennes, F35708, France.
authors.forename: Charles
authors.initials: C
authors.lastname: Cornet
authors.affiliation: UMR FOTON, CNRS, INSA Rennes, Rennes, F35708, France.
authors.forename: Nicolas
authors.initials: N
authors.lastname: Bertru
authors.affiliation: UMR FOTON, CNRS, INSA Rennes, Rennes, F35708, France.
authors.forename: Alain
authors.initials: A
authors.lastname: Le Corre
authors.affiliation: UMR FOTON, CNRS, INSA Rennes, Rennes, F35708, France.
authors.forename: Olivier
authors.initials: O
authors.lastname: Durand
keywords: GaP/Si nanolayers; antiphase defects; laboratory X-ray diffraction; microtwins; semiconductors