title: InGaN/GaN nanowires grown on SiO(2) and light emitting diodes with low turn on voltages.
abstract: GaN nanowires and InGaN disk heterostructures are grown on an amorphous SiO2layer by a plasma-assisted molecular beam epitaxy. Structural studies using scanning electron microscopy and high-resolution transmission electron microscopy reveal that the nanowires grow vertically without any extended defect similarly to nanowires grown on Si. The as-grown nanowires have an intermediate region consisting of Ga, O, and Si rather than SiNx at the interface between the nanowires and SiO2. The measured photoluminescence shows a variation of peak wavelengths ranging from 580 nm to 635 nm because of non-uniform indium incorporation. The nanowires grown on SiO2are successfully transferred to a flexible polyimide sheet by Au-welding and epitaxial lift-off processes. The light-emitting diodes fabricated with the transferred nanowires are characterized by a turn-on voltage of approximately 4 V. The smaller turn-on voltage in contrast to those of conventional nanowire light-emitting diodes is due to the absence of an intermediate layer, which is removed during an epitaxial lift-off process. The measured electroluminescence shows peak wavelengths of 610-616 nm with linewidths of 116-123 nm.
authors.forename: Youngseo
authors.initials: Y
authors.lastname: Park
authors.forename: Shafat
authors.initials: S
authors.lastname: Jahangir
authors.forename: Yongjun
authors.initials: Y
authors.lastname: Park
authors.forename: Pallab
authors.initials: P
authors.lastname: Bhattacharya
authors.forename: Junseok
authors.initials: J
authors.lastname: Heo