title: Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.
abstract: Nanowire-based ferroelectric-complementary metal-oxide-semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 10(5) times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.
authors.affiliation: Department of Physics, Sungkyunkwan University, Suwon 440-746, Republic of Korea. djkang@skku.edu.
authors.forename: Ngoc Huynh
authors.initials: NH
authors.lastname: Van
authors.forename: Jae-Hyun
authors.initials: JH
authors.lastname: Lee
authors.forename: Dongmok
authors.initials: D
authors.lastname: Whang
authors.forename: Dae Joon
authors.initials: DJ
authors.lastname: Kang