title: Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures.
abstract: Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2-WSe2-graphene and WSe2-MoS2-graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.
authors.affiliation: Department of Materials Science and Engineering and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors.forename: Yu-Chuan
authors.identifier: 0000000349585073
authors.initials: YC
authors.lastname: Lin
authors.affiliation: Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors.forename: Ram Krishna
authors.initials: RK
authors.lastname: Ghosh
authors.affiliation: Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA.
authors.forename: Rafik
authors.initials: R
authors.lastname: Addou
authors.affiliation: Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA.
authors.forename: Ning
authors.initials: N
authors.lastname: Lu
authors.affiliation: Department of Materials Science and Engineering and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors.forename: Sarah M
authors.initials: SM
authors.lastname: Eichfeld
authors.affiliation: Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA.
authors.forename: Hui
authors.initials: H
authors.lastname: Zhu
authors.affiliation: Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
authors.forename: Ming-Yang
authors.initials: MY
authors.lastname: Li
authors.affiliation: Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA.
authors.forename: Xin
authors.initials: X
authors.lastname: Peng
authors.affiliation: Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA.
authors.forename: Moon J
authors.initials: MJ
authors.lastname: Kim
authors.affiliation: Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia.
authors.forename: Lain-Jong
authors.initials: LJ
authors.lastname: Li
authors.affiliation: Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA.
authors.forename: Robert M
authors.initials: RM
authors.lastname: Wallace
authors.affiliation: Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors.forename: Suman
authors.initials: S
authors.lastname: Datta
authors.affiliation: Department of Materials Science and Engineering and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors.forename: Joshua A
authors.initials: JA
authors.lastname: Robinson