title: Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack.
abstract: Magnetic skyrmions are localized and topologically protected spin configurations, which are of both fundamental and applied interests for future electronics. In this work, we propose a voltage-gated skyrmion transistor within the well-established framework of micromagnetics. Its operating conditions and processes have been theoretically investigated and demonstrated, in which the gate voltage can be used to switch on/off a circuit. Our results provide the first time guidelines for practical realization of hybrid skyrmionic-electronic devices.
authors.affiliation: Department of Physics, University of Hong Kong, Hong Kong, China.
authors.forename: Xichao
authors.initials: X
authors.lastname: Zhang
authors.affiliation: 1] Department of Physics, University of Hong Kong, Hong Kong, China [2] Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Zhou
authors.affiliation: Department of Applied Physics, University of Tokyo, Hongo 7-3-1, Tokyo 113-8656, Japan.
authors.forename: Motohiko
authors.initials: M
authors.lastname: Ezawa
authors.affiliation: 1] College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, China [2] Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology &Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
authors.forename: G P
authors.initials: GP
authors.lastname: Zhao
authors.affiliation: Fert Beijing Institute, Beihang University, Beijing, China.
authors.forename: Weisheng
authors.initials: W
authors.lastname: Zhao