title: Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS2/CuI P-I-N Photodiode Application.
abstract: A seedless hydrothermal method is developed to grow high density and vertically aligned ZnO micro/nanowire arrays with low defect density on metal films under the saturated nutrition solution. In particular, the mechanism of seedless method is discussed here. A buffer layer can be confirmed by transmission electron microscopy (TEM), which may release the elastic strain between ZnO and substrate to achieve this highly mismatched heteroepitaxial structures. Based on ZnO micro/nanowire arrays with excellent wettability surface, we prepared ZnO-FeS2-CuI p-i-n photodiode by all-solution processed method with the high rectifying ratio of 197 at ± 1 V. Under AM 1.5 condition, the Jsc of 0.5 mA/cm(2), on-off current ratio of 371 and fast photoresponse at zero bias voltage were obtained. This good performance comes from excellent collection ability of photogenerated electrons and holes due to the increased depletion layer width for p-i-n structure. Finally, the high responsivity around 900 nm shows the potential as near infrared photodetectors applications.
authors.affiliation: 1] Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry; International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China [2] Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
authors.forename: Zhi
authors.initials: Z
authors.lastname: Yang
authors.affiliation: Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry; International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China.
authors.forename: Minqiang
authors.initials: M
authors.lastname: Wang
authors.affiliation: 1] Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore [2] Energy Research Institute, Interdisciplinary Graduate School, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.
authors.forename: Sudhanshu
authors.initials: S
authors.lastname: Shukla
authors.affiliation: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
authors.forename: Yue
authors.initials: Y
authors.lastname: Zhu
authors.affiliation: Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry; International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China.
authors.forename: Jianping
authors.initials: J
authors.lastname: Deng
authors.affiliation: Energy Research Institute, Interdisciplinary Graduate School, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.
authors.forename: Hu
authors.initials: H
authors.lastname: Ge
authors.affiliation: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
authors.forename: Xingzhi
authors.initials: X
authors.lastname: Wang
authors.affiliation: 1] Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore [2] NOVITAS, Nanoelectronics Center of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore.
authors.forename: Qihua
authors.initials: Q
authors.lastname: Xiong