title: Epitaxial B-Graphene: Large-Scale Growth and Atomic Structure.
abstract: Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an efficient method based on chemical vapor deposition for large scale growth of boron-doped graphene (B-graphene) on Ni(111) and Co(0001) substrates using carborane molecules as the precursor. It is shown that up to 19 at. % of boron can be embedded in the graphene matrix and that a planar C-B sp(2) network is formed. It is resistant to air exposure and widely retains the electronic structure of graphene on metals. The large-scale and local structure of this material has been explored depending on boron content and substrate. By resolving individual impurities with scanning tunneling microscopy we have demonstrated the possibility for preferential substitution of carbon with boron in one of the graphene sublattices (unbalanced sublattice doping) at low doping level on the Ni(111) substrate. At high boron content the honeycomb lattice of B-graphene is strongly distorted, and therefore, it demonstrates no unballanced sublattice doping.
authors.affiliation: †Saint Petersburg State University, 198504 St. Petersburg, Russia.
authors.forename: Dmitry Yu
authors.initials: DY
authors.lastname: Usachov
authors.affiliation: †Saint Petersburg State University, 198504 St. Petersburg, Russia.|‡II Physikalisches Institut, Universität zu Köln, Zülpicher Strasse 77, 50937 Köln, Germany.|§IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany.
authors.forename: Alexander V
authors.initials: AV
authors.lastname: Fedorov
authors.affiliation: †Saint Petersburg State University, 198504 St. Petersburg, Russia.
authors.forename: Anatoly E
authors.initials: AE
authors.lastname: Petukhov
authors.affiliation: †Saint Petersburg State University, 198504 St. Petersburg, Russia.
authors.forename: Oleg Yu
authors.initials: OY
authors.lastname: Vilkov
authors.affiliation: †Saint Petersburg State University, 198504 St. Petersburg, Russia.
authors.forename: Artem G
authors.initials: AG
authors.lastname: Rybkin
authors.affiliation: ⊥Donostia International Physics Center (DIPC), Departamento de Fisica de Materiales and CFM-MPC UPV/EHU, 20080 San Sebastian, Spain.|∥Tomsk State University, Lenina Av., 36, 634050 Tomsk, Russia.
authors.forename: Mikhail M
authors.initials: MM
authors.lastname: Otrokov
authors.affiliation: ⊥Donostia International Physics Center (DIPC), Departamento de Fisica de Materiales and CFM-MPC UPV/EHU, 20080 San Sebastian, Spain.
authors.forename: Andrés
authors.initials: A
authors.lastname: Arnau
authors.affiliation: ⊥Donostia International Physics Center (DIPC), Departamento de Fisica de Materiales and CFM-MPC UPV/EHU, 20080 San Sebastian, Spain.|∥Tomsk State University, Lenina Av., 36, 634050 Tomsk, Russia.
authors.forename: Evgueni V
authors.initials: EV
authors.lastname: Chulkov
authors.affiliation: #M.V. Lomonosov Moscow State University, Leniskie Gory 1/3 199991 Moscow, Russia.
authors.forename: Lada V
authors.initials: LV
authors.lastname: Yashina
authors.affiliation: ∇Institute for Research in Fundamental Sciences (IPM), P.O. Box 19395-5531, Tehran, Iran.
authors.forename: Mani
authors.initials: M
authors.lastname: Farjam
authors.affiliation: †Saint Petersburg State University, 198504 St. Petersburg, Russia.
authors.forename: Vera K
authors.initials: VK
authors.lastname: Adamchuk
authors.affiliation: †Saint Petersburg State University, 198504 St. Petersburg, Russia.|⊗Institute of Solid State Physics, Dresden University of Technology, D-01062 Dresden, Germany.
authors.forename: Boris V
authors.initials: BV
authors.lastname: Senkovskiy
authors.affiliation: ⊗Institute of Solid State Physics, Dresden University of Technology, D-01062 Dresden, Germany.
authors.forename: Clemens
authors.initials: C
authors.lastname: Laubschat
authors.affiliation: †Saint Petersburg State University, 198504 St. Petersburg, Russia.|⊥Donostia International Physics Center (DIPC), Departamento de Fisica de Materiales and CFM-MPC UPV/EHU, 20080 San Sebastian, Spain.|⊗Institute of Solid State Physics, Dresden University of Technology, D-01062 Dresden, Germany.|¶IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Spain.
authors.forename: Denis V
authors.initials: DV
authors.lastname: Vyalikh
keywords: boron; doping; electronic structure; graphene; photoemission spectroscopy; tunneling microscopy