title: Electron-Hole Confinement Symmetry in Silicon Quantum Dots.
abstract: We report electrical transport measurements on a gate-defined ambipolar quantum dot in intrinsic silicon. The ambipolarity allows its operation as either an electron or a hole quantum dot of which we change the dot occupancy by 20 charge carriers in each regime. Electron-hole confinement symmetry is evidenced by the extracted gate capacitances and charging energies. The results demonstrate that ambipolar quantum dots offer great potential for spin-based quantum information processing, since confined electrons and holes can be compared and manipulated in the same crystalline environment.
authors.affiliation: NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands.
authors.forename: Filipp
authors.initials: F
authors.lastname: Mueller
authors.affiliation: NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands.
authors.forename: Georgios
authors.initials: G
authors.lastname: Konstantaras
authors.affiliation: NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands.
authors.forename: Paul C
authors.initials: PC
authors.lastname: Spruijtenburg
authors.affiliation: NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands.
authors.forename: Wilfred G
authors.initials: WG
authors.lastname: van der Wiel
authors.affiliation: NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands.
authors.forename: Floris A
authors.initials: FA
authors.lastname: Zwanenburg
keywords: MOSFET; ambipolar transport; quantum dots; quantum information processing; silicon; spin qubits