title: MoS2 Heterojunctions by Thickness Modulation.
abstract: In this work, we report lateral heterojunction formation in as-exfoliated MoS2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. The work presents experimental and theoretical understanding of the band alignment and photoresponse of thickness modulated MoS2 junctions with important implications for exploring novel optoelectronic devices.
authors.affiliation: 1] Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720 [2] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 [3] Berkeley Sensor and Actuator Center, University of California, Berkeley, CA, 94720.
authors.forename: Mahmut
authors.initials: M
authors.lastname: Tosun
authors.affiliation: 1] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 [2] Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720.
authors.forename: Deyi
authors.initials: D
authors.lastname: Fu
authors.affiliation: 1] Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720 [2] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 [3] Berkeley Sensor and Actuator Center, University of California, Berkeley, CA, 94720.
authors.forename: Sujay B
authors.initials: SB
authors.lastname: Desai
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720.
authors.forename: Changhyun
authors.initials: C
authors.lastname: Ko
authors.affiliation: 1] Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720 [2] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 [3] Berkeley Sensor and Actuator Center, University of California, Berkeley, CA, 94720.
authors.forename: Jeong Seuk
authors.initials: JS
authors.lastname: Kang
authors.affiliation: 1] Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720 [2] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 [3] Berkeley Sensor and Actuator Center, University of California, Berkeley, CA, 94720.
authors.forename: Der-Hsien
authors.initials: DH
authors.lastname: Lien
authors.affiliation: 1] Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720 [2] Berkeley Sensor and Actuator Center, University of California, Berkeley, CA, 94720.
authors.forename: Mohammad
authors.initials: M
authors.lastname: Najmzadeh
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720.
authors.forename: Sefaattin
authors.initials: S
authors.lastname: Tongay
authors.affiliation: 1] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 [2] Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720.
authors.forename: Junqiao
authors.initials: J
authors.lastname: Wu
authors.affiliation: 1] Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720 [2] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 [3] Berkeley Sensor and Actuator Center, University of California, Berkeley, CA, 94720.
authors.forename: Ali
authors.initials: A
authors.lastname: Javey