title: Radio Frequency Transistors and Circuits Based on CVD MoS2.
abstract: We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS2 field-effect transistors (FETs). Initial DC characterizations of fabricated MoS2 FETs yielded current densities exceeding 200 μA/μm and maximum transconductance of 38 μS/μm. A contact resistance corrected low-field mobility of 55 cm(2)/(V s) was achieved. Radio frequency FETs were fabricated in the ground-signal-ground (GSG) layout, and standard de-embedding techniques were applied. Operating at the peak transconductance, we obtain short-circuit current-gain intrinsic cutoff frequency, fT, of 6.7 GHz and maximum intrinsic oscillation frequency, fmax, of 5.3 GHz for a device with a gate length of 250 nm. The MoS2 device afforded an extrinsic voltage gain Av of 6 dB at 100 MHz with voltage amplification until 3 GHz. With the as-measured frequency performance of CVD MoS2, we provide the first demonstration of a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of -15 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS2 may be suitable for industrial-scale electronic applications.
authors.affiliation: †Microelectronics Research Center and ‡Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712, United States.
authors.forename: Atresh
authors.initials: A
authors.lastname: Sanne
authors.affiliation: †Microelectronics Research Center and ‡Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712, United States.
authors.forename: Rudresh
authors.initials: R
authors.lastname: Ghosh
authors.affiliation: †Microelectronics Research Center and ‡Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712, United States.
authors.forename: Amritesh
authors.initials: A
authors.lastname: Rai
authors.affiliation: †Microelectronics Research Center and ‡Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712, United States.
authors.forename: Maruthi Nagavalli
authors.initials: MN
authors.lastname: Yogeesh
authors.affiliation: †Microelectronics Research Center and ‡Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712, United States.
authors.forename: Seung Heon
authors.initials: SH
authors.lastname: Shin
authors.affiliation: †Microelectronics Research Center and ‡Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712, United States.
authors.forename: Ankit
authors.initials: A
authors.lastname: Sharma
authors.forename: Karalee
authors.initials: K
authors.lastname: Jarvis
authors.affiliation: §Applied Novel Devices Inc., Austin, Texas 78717, United States.
authors.forename: Leo
authors.initials: L
authors.lastname: Mathew
authors.affiliation: §Applied Novel Devices Inc., Austin, Texas 78717, United States.
authors.forename: Rajesh
authors.initials: R
authors.lastname: Rao
authors.affiliation: †Microelectronics Research Center and ‡Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712, United States.
authors.forename: Deji
authors.initials: D
authors.lastname: Akinwande
authors.affiliation: †Microelectronics Research Center and ‡Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712, United States.
authors.forename: Sanjay
authors.initials: S
authors.lastname: Banerjee
keywords: CVD; MoS2; circuits; field-effect transistor; high-k; radio frequency