title: Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging.
abstract: Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full-field X-ray microdiffraction imaging using synchrotron radiation is employed to investigate the long-range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods.
authors.affiliation: Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Germany.
authors.forename: Z J
authors.initials: ZJ
authors.lastname: Li
authors.affiliation: Crystallography, University of Freiburg, Germany.
authors.forename: A N
authors.initials: AN
authors.lastname: Danilewsky
authors.affiliation: Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Germany.
authors.forename: L
authors.initials: L
authors.lastname: Helfen
authors.affiliation: Institute of Condensed Matter Physics, Masaryk University, Czech Republic.
authors.forename: P
authors.initials: P
authors.lastname: Mikulik
authors.affiliation: Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Germany.
authors.forename: D
authors.initials: D
authors.lastname: Haenschke
authors.affiliation: Crystallography, University of Freiburg, Germany.
authors.forename: J
authors.initials: J
authors.lastname: Wittge
authors.affiliation: School of Electronic Engineering, Dublin City University, Ireland.
authors.forename: D
authors.initials: D
authors.lastname: Allen
authors.affiliation: School of Electronic Engineering, Dublin City University, Ireland.
authors.forename: P
authors.initials: P
authors.lastname: McNally
authors.affiliation: Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Germany.
authors.forename: T
authors.initials: T
authors.lastname: Baumbach
keywords: XMDI; defect; nanoindentation; silicon; strain