title: Circular test structure for the determination of piezoelectric constants of ScxAl1-xN thin films applying Laser Doppler Vibrometry and FEM simulations.
abstract: Piezoelectric scandium aluminium nitride (ScxAl1-xN) thin films offer a large potential for the application in micro electromechanical systems, as advantageous properties of pure AlN thin films are maintained, but combined with an increased piezoelectric actuation and sensing potential. ScxAl1-xN thin films withx= 27% have been prepared by DC reactive magnetron sputtering to find optimized deposition parameters to maximize the piezoelectric constantsd33andd31. For the accurate and simultaneous measurement of these constants Laser Doppler Vibrometry has been applied and compared to finite element (FEM) simulations. The electrode design has been optimized to rotational symmetric structures enabling a 180° phase shifted excitation, so that a straight-forward comparison of experimental displacement curves with those obtained from FEM is feasible.
authors.affiliation: Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse 7, 1040 Vienna, Austria.
authors.forename: P M
authors.initials: PM
authors.lastname: Mayrhofer
authors.affiliation: Institute of Materials Science and Technology, Vienna University of Technology, Karlsplatz 13, 1040 Vienna, Austria.
authors.forename: H
authors.initials: H
authors.lastname: Euchner
authors.affiliation: Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse 7, 1040 Vienna, Austria.
authors.forename: A
authors.initials: A
authors.lastname: Bittner
authors.affiliation: Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse 7, 1040 Vienna, Austria.
authors.forename: U
authors.initials: U
authors.lastname: Schmid
keywords: AlN; Aluminum nitride; Interferometry; Piezoelectric thin film; ScAlN; Vibrometry