title: p-type doping of MgZnO films and their applications in optoelectronic devices.
abstract: A lithium and nitrogen codoping method has been employed to prepare p-type MgZnO films, and p-MgZnO/i-ZnO/n-ZnO structured light-emitting devices (LEDs) and photodetectors have been fabricated. The LEDs can work continuously for about 97 h under the injection of a 20 mA continuous current, which is the best value ever reported for ZnO-based LEDs. The performance of the photodetectors degrades little after several running cycles. The above results reveal the applicability of the p-MgZnO films in optoelectronic devices.
authors.forename: C X
authors.initials: CX
authors.lastname: Shan
authors.forename: J S
authors.initials: JS
authors.lastname: Liu
authors.forename: Y J
authors.initials: YJ
authors.lastname: Lu
authors.forename: B H
authors.initials: BH
authors.lastname: Li
authors.forename: Francis C C
authors.initials: FC
authors.lastname: Ling
authors.forename: D Z
authors.initials: DZ
authors.lastname: Shen