title: Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties.
abstract: New layered anisotropic infrared semiconductors, black arsenic-phosphorus (b-AsP), with highly tunable chemical compositions and electronic and optical properties are introduced. Transport and infrared absorption studies demonstrate the semiconducting nature of b-AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into the long-wavelength infrared regime and cannot be readily reached by other layered materials.
authors.affiliation: Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
authors.forename: Bilu
authors.initials: B
authors.lastname: Liu
authors.affiliation: Department of Chemistry, Technische Universität München, Lichtenbergstraße 4, Garching b, München, 485748, Germany.
authors.forename: Marianne
authors.initials: M
authors.lastname: Köpf
authors.affiliation: Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
authors.forename: Ahmad N
authors.initials: AN
authors.lastname: Abbas
authors.affiliation: Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA.
authors.forename: Xiaomu
authors.initials: X
authors.lastname: Wang
authors.affiliation: Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA.
authors.forename: Qiushi
authors.initials: Q
authors.lastname: Guo
authors.affiliation: Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA.
authors.forename: Yichen
authors.initials: Y
authors.lastname: Jia
authors.affiliation: Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA.
authors.forename: Fengnian
authors.initials: F
authors.lastname: Xia
authors.affiliation: Institut für Anorganische Chemie, Universität Regensburg, Universitätsstraße 31, Regensburg, 93040, Germany.
authors.forename: Richard
authors.initials: R
authors.lastname: Weihrich
authors.affiliation: Institut für Anorganische Chemie, Universität Regensburg, Universitätsstraße 31, Regensburg, 93040, Germany.
authors.forename: Frederik
authors.initials: F
authors.lastname: Bachhuber
authors.affiliation: Institut für Anorganische Chemie, Universität Regensburg, Universitätsstraße 31, Regensburg, 93040, Germany.
authors.forename: Florian
authors.initials: F
authors.lastname: Pielnhofer
authors.affiliation: Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
authors.forename: Han
authors.initials: H
authors.lastname: Wang
authors.affiliation: Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
authors.forename: Rohan
authors.initials: R
authors.lastname: Dhall
authors.affiliation: Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
authors.forename: Stephen B
authors.initials: SB
authors.lastname: Cronin
authors.affiliation: Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
authors.forename: Mingyuan
authors.initials: M
authors.lastname: Ge
authors.affiliation: Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
authors.forename: Xin
authors.initials: X
authors.lastname: Fang
authors.affiliation: Department of Chemistry, Technische Universität München, Lichtenbergstraße 4, Garching b, München, 485748, Germany.
authors.forename: Tom
authors.initials: T
authors.lastname: Nilges
authors.affiliation: Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
authors.forename: Chongwu
authors.initials: C
authors.lastname: Zhou
keywords: anisotropic; band gaps; black arsenic; black phosphorus; infrared semiconductors; layered materials