title: Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation.
abstract: We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages (Vd). The low-field characteristics of these devices indicate that the electron mobility is likely limited by scattering from charged impurities. The current-voltage characteristics exhibit variable range hopping at low Vd and evidence of velocity saturation at higher Vd. This work confirms the excellent potential of MoS2 as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action.
authors.affiliation: †Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260-1900, United States.
authors.forename: G
authors.initials: G
authors.lastname: He
authors.affiliation: †Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260-1900, United States.
authors.forename: K
authors.initials: K
authors.lastname: Ghosh
authors.affiliation: †Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260-1900, United States.
authors.forename: U
authors.initials: U
authors.lastname: Singisetti
authors.affiliation: †Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260-1900, United States.
authors.forename: H
authors.initials: H
authors.lastname: Ramamoorthy
authors.affiliation: ‡Department of Physics, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, Thailand.
authors.forename: R
authors.initials: R
authors.lastname: Somphonsane
authors.affiliation: †Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260-1900, United States.
authors.forename: G
authors.initials: G
authors.lastname: Bohra
authors.affiliation: §Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
authors.forename: M
authors.initials: M
authors.lastname: Matsunaga
authors.affiliation: §Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
authors.forename: A
authors.initials: A
authors.lastname: Higuchi
authors.affiliation: §Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
authors.forename: N
authors.initials: N
authors.lastname: Aoki
authors.affiliation: ∥Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States.
authors.forename: S
authors.initials: S
authors.lastname: Najmaei
authors.affiliation: ∥Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States.
authors.forename: Y
authors.initials: Y
authors.lastname: Gong
authors.affiliation: ∥Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States.
authors.forename: X
authors.initials: X
authors.lastname: Zhang
authors.affiliation: ∥Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States.
authors.forename: R
authors.initials: R
authors.lastname: Vajtai
authors.affiliation: ∥Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States.
authors.forename: P M
authors.initials: PM
authors.lastname: Ajayan
authors.affiliation: †Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260-1900, United States.
authors.forename: J P
authors.initials: JP
authors.lastname: Bird
mesh_terms: D003460:Crystallization; D004220:Disulfides / Q000737:chemistry*; D004553:Electric Conductivity; D004867:Equipment Design; D008958:Models, Molecular; D008982:Molybdenum / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D004220:Disulfides; D008982:Molybdenum; C082964:molybdenum disulfide
keywords: 2D transistors; Molybdenum disulfide; high-field transport; transition metal dichalcogenides; velocity saturation