title: Rapid and Nondestructive Identification of Polytypism and Stacking Sequences in Few-Layer Molybdenum Diselenide by Raman Spectroscopy.
abstract: Various combinations of interlayer shear modes emerge in few-layer molybdenum diselenide grown by chemical vapor deposition depending on the stacking configuration of the sample. Raman measurements may also reveal polytypism and stacking faults, as supported by first principles calculations and high-resolution transmission electron microscopy. Thus, Raman spectroscopy is an important tool in probing stacking-dependent properties in few-layer 2D materials.
authors.affiliation: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
authors.forename: Xin
authors.initials: X
authors.lastname: Lu
authors.affiliation: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
authors.forename: M Iqbal Bakti
authors.initials: MIB
authors.lastname: Utama
authors.affiliation: Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, 37235, USA.|Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
authors.forename: Junhao
authors.initials: J
authors.lastname: Lin
authors.affiliation: Department of Physics, Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117546, Singapore.|Institute of High Performance Computing, Singapore, 138632, Singapore.
authors.forename: Xin
authors.initials: X
authors.lastname: Luo
authors.affiliation: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
authors.forename: Yanyuan
authors.initials: Y
authors.lastname: Zhao
authors.affiliation: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
authors.forename: Jun
authors.initials: J
authors.lastname: Zhang
authors.affiliation: Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, 37235, USA.|Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
authors.forename: Sokrates T
authors.initials: ST
authors.lastname: Pantelides
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
authors.forename: Wu
authors.initials: W
authors.lastname: Zhou
authors.affiliation: Department of Physics, Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117546, Singapore.|Institute of High Performance Computing, Singapore, 138632, Singapore.
authors.forename: Su Ying
authors.initials: SY
authors.lastname: Quek
authors.affiliation: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.|NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
authors.forename: Qihua
authors.initials: Q
authors.lastname: Xiong
keywords: few layer MoSe2; interlayer shear mode; molybdenum diselenide; polytypism; stacking