title: Effects of Laser Annealing Parameters on Optical and Electrical Properties of ITO/Metallic Glass Alloy Bi-layer Films.
abstract: AgAlMg (AAM) films with three different atomic percentage compositions are prepared, namely, Ag12Al62Mg26 (denoted as A1AM), Ag22Al46Mg32 (denoted as A2AM), and Ag36Al25Mg39 (denoted as A3AM). In addition, the AAM films are deposited with four different thicknesses, i.e., 3, 6, 9, and 12 nm. The indium-tin oxide thickness is assigned a constant value of 30 nm in every case. The results show that the optical transmittance of the AAM/IAAM films improves (i.e., increases) with a reducing AAM film thickness, while the electrical resistivity improves (i.e., reduces) with an increasing film thickness. It is shown that the IA2AM film with an AMM thickness of 9 nm yields the optimal compromise between the optical transmittance and the electrical resistivity. The as-deposited IAAM films are found to have optical transmittance and electric resistivity values of 65 % and 90 Ω/□, respectively. The IA2AM films are annealed using a near-infrared laser at different pulse energies with a wavelength of 1064 nm and repetition rates ranging from 100 ~ 400 kHz. For both films, the optical and electrical properties are enhanced as the pulse energy increases to a certain critical value due to a transition from an amorphous microstructure to a crystalline structure. Given a repetition rate of 400 kHz and a pulse energy of 1.03 μJ, the optical transmittance and sheet resistance of the IAAM film are found to be 80 % and 15 Ω/□, respectively. The corresponding value of the Haacke figure of merit changed from 0.15 × 10(-3) to 7.16 × 10(-3) Ω(-1) due to the optimal laser annealing conditions.
authors.affiliation: Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology, 1, Hseuhfu Road, Pingtung, 912, Taiwan, HKLin@mail.npust.edu.tw.
authors.forename: H K
authors.initials: HK
authors.lastname: Lin
authors.forename: K C
authors.initials: KC
authors.lastname: Cheng
authors.forename: J C
authors.initials: JC
authors.lastname: Huang