title: Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer.
abstract: The electronic coupling in vertically aligned InAs/GaAs quantum dot (QD) pairs is investigated by photoluminescence (PL) measurements. A thin Al0.5Ga0.5As barrier greatly changes the energy transfer process and the optical performance of the QD pairs. As a result, the QD PL intensity ratio shows different dependence on the intensity and wavelength of the excitation laser. Time-resolved PL measurements give a carrier tunneling time of 380 ps from the seed layer QDs to the top layer QDs while it elongates to 780 ps after inserting the thin Al0.5Ga0.5As barrier. These results provide useful information for fabrication and investigation of artificial QD molecules for implementing quantum computation applications.
authors.affiliation: College of Physics Science & Technology, Hebei University, Baoding, 071002, People's Republic of China.
authors.forename: Yao
authors.initials: Y
authors.lastname: Liu
authors.forename: Baolai
authors.initials: B
authors.lastname: Liang
authors.forename: Qinglin
authors.initials: Q
authors.lastname: Guo
authors.forename: Shufang
authors.initials: S
authors.lastname: Wang
authors.forename: Guangsheng
authors.initials: G
authors.lastname: Fu
authors.forename: Nian
authors.initials: N
authors.lastname: Fu
authors.forename: Zhiming M
authors.initials: ZM
authors.lastname: Wang
authors.forename: Yuriy I
authors.initials: YI
authors.lastname: Mazur
authors.forename: Gregory J
authors.initials: GJ
authors.lastname: Salamo