title: Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics.
abstract: High-performance piezoelectricity in monolayer semiconducting transition metal dichalcogenides is highly desirable for the development of nanosensors, piezotronics and photo-piezotransistors. Here we report the experimental study of the theoretically predicted piezoelectric effect in triangle monolayer MoS2 devices under isotropic mechanical deformation. The experimental observation indicates that the conductivity of MoS2 devices can be actively modulated by the piezoelectric charge polarization-induced built-in electric field under strain variation. These polarization charges alter the Schottky barrier height on both contacts, resulting in a barrier height increase with increasing compressive strain and decrease with increasing tensile strain. The underlying mechanism of strain-induced in-plane charge polarization is proposed and discussed using energy band diagrams. In addition, a new type of MoS2 strain/force sensor built using a monolayer MoS2 triangle is also demonstrated. Our results provide evidence for strain-gating monolayer MoS2 piezotronics, a promising avenue for achieving augmented functionalities in next-generation electronic and mechanical-electronic nanodevices.
authors.affiliation: School of Materials Science and Engineering, University of Science and Technology Beijing, Xueyuan Road 30, Beijing 100083, China.
authors.forename: Junjie
authors.initials: J
authors.lastname: Qi
authors.affiliation: 1] Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA [2] Institute of Physics, Academia Sinica, Taipei 115, Taiwan.
authors.forename: Yann-Wen
authors.initials: YW
authors.lastname: Lan
authors.affiliation: 1] California NanoSystems Institute (CNSI), University of California-Los Angeles, Los Angeles, California 90095, USA [2] WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba 305-0044, Japan.
authors.forename: Adam Z
authors.identifier: 0000000173129364
authors.initials: AZ
authors.lastname: Stieg
authors.affiliation: Department of Physics and Center for Nanotechnology, Chung Yuan Cristian University, Chungli 32023, Taiwan.
authors.forename: Jyun-Hong
authors.initials: JH
authors.lastname: Chen
authors.affiliation: Department of Physics and Center for Nanotechnology, Chung Yuan Cristian University, Chungli 32023, Taiwan.
authors.forename: Yuan-Liang
authors.initials: YL
authors.lastname: Zhong
authors.affiliation: Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Huwal 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Lain-Jong
authors.initials: LJ
authors.lastname: Li
authors.affiliation: Institute of Physics, Academia Sinica, Taipei 115, Taiwan.
authors.forename: Chii-Dong
authors.initials: CD
authors.lastname: Chen
authors.affiliation: School of Materials Science and Engineering, University of Science and Technology Beijing, Xueyuan Road 30, Beijing 100083, China.
authors.forename: Yue
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Kang L
authors.initials: KL
authors.lastname: Wang