title: Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography.
abstract: Graphene nanostructures are attracting a great deal of interest because of newly emerging properties originating from quantum confinement effects. We report on using interferometric lithography to fabricate uniform, chip-scale, semiconducting graphene nanomesh (GNM) with sub-10 nm neck widths (smallest edge-to-edge distance between two nanoholes). This approach is based on fast, low-cost, and high-yield lithographic technologies and demonstrates the feasibility of cost-effective development of large-scale semiconducting graphene sheets and devices. The GNM is estimated to have a room temperature energy bandgap of ~30 meV. Raman studies showed that the G band of the GNM experiences a blue shift and broadening compared to pristine graphene, a change which was attributed to quantum confinement and localization effects. A single-layer GNM field effect transistor exhibited promising drive current of ~3.9 μA/μm and ON/OFF current ratios of ~35 at room temperature. The ON/OFF current ratio of the GNM-device displayed distinct temperature dependence with about 24-fold enhancement at 77 K.
authors.affiliation: Center for High Technology Materials, University of New Mexico, NM 87106, USA.
authors.forename: Alireza
authors.initials: A
authors.lastname: Kazemi
authors.affiliation: Center for High Technology Materials, University of New Mexico, NM 87106, USA.
authors.forename: Xiang
authors.initials: X
authors.lastname: He
authors.affiliation: 1] Center for High Technology Materials, University of New Mexico, NM 87106, USA [2] Department of Mechanical Engineering, University of New Mexico, NM 87131, USA.
authors.forename: Seyedhamidreza
authors.initials: S
authors.lastname: Alaie
authors.affiliation: Center for High Technology Materials, University of New Mexico, NM 87106, USA.
authors.forename: Javad
authors.initials: J
authors.lastname: Ghasemi
authors.affiliation: 1] Center for High Technology Materials, University of New Mexico, NM 87106, USA [2] Nanoscience and Microsystems Engineering, University of New Mexico, NM 87131, USA.
authors.forename: Noel Mayur
authors.initials: NM
authors.lastname: Dawson
authors.affiliation: Center for High Technology Materials, University of New Mexico, NM 87106, USA.
authors.forename: Francesca
authors.initials: F
authors.lastname: Cavallo
authors.affiliation: Center for High Technology Materials, University of New Mexico, NM 87106, USA.
authors.forename: Terefe G
authors.initials: TG
authors.lastname: Habteyes
authors.affiliation: Center for High Technology Materials, University of New Mexico, NM 87106, USA.
authors.forename: Steven R J
authors.initials: SR
authors.lastname: Brueck
authors.affiliation: Center for High Technology Materials, University of New Mexico, NM 87106, USA.
authors.forename: Sanjay
authors.initials: S
authors.lastname: Krishna