title: Raman shift and electrical properties of MoS2 bilayer on boron nitride substrate.
abstract: We have fabricated a bilayer molybdenum disulphide (MoS2) transistor on boron nitride (BN) substrate and performed Raman spectroscopy and electrical measurements with this device. The characteristic Raman peaks show an upshift about 2.5 cm(-1) with the layer lying on BN, and a narrower line width in comparison with those on a SiO2 substrate. The device has a maximum drain current larger than 1 μA and a high current on/off ratio of greater than 10(8). In the temperature range of 100 K-293 K, the two terminal gate effect mobility and the carrier density do not change significantly with temperature. Results of the Raman and electrical measurements reveal that BN is a suitable substrate for atomic layer electrical devices.
authors.affiliation: School of Electronic and Electrical Engineering and Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Lijun
authors.initials: L
authors.lastname: Li
authors.forename: Inyeal
authors.initials: I
authors.lastname: Lee
authors.forename: Dongsuk
authors.initials: D
authors.lastname: Lim
authors.forename: Moonshik
authors.initials: M
authors.lastname: Kang
authors.forename: Gil-Ho
authors.initials: GH
authors.lastname: Kim
authors.forename: Nobuyuki
authors.initials: N
authors.lastname: Aoki
authors.forename: Yuichi
authors.initials: Y
authors.lastname: Ochiai
authors.forename: Kenji
authors.initials: K
authors.lastname: Watanabe
authors.forename: Takashi
authors.initials: T
authors.lastname: Taniguchi