title: An Ultrahigh-Resolution Digital Image Sensor with Pixel Size of 50 nm by Vertical Nanorod Arrays.
abstract: The pixel size limit of existing digital image sensors is successfully overcome by using vertically aligned semiconducting nanorods as the 3D photosensing pixels. On this basis, an unprecedentedly high-resolution digital image sensor with a pixel size of 50 nm and a resolution of 90 nm is fabricated. The ultrahigh-resolution digital image sensor can heavily impact the field of visual information.
authors.affiliation: Department of Metallurgical and Materials Engineering, Center for Materials for Information Technology (MINT), The University of Alabama, Tuscaloosa, AL, 35487, USA.
authors.forename: Chengming
authors.initials: C
authors.lastname: Jiang
authors.affiliation: Department of Metallurgical and Materials Engineering, Center for Materials for Information Technology (MINT), The University of Alabama, Tuscaloosa, AL, 35487, USA.
authors.forename: Jinhui
authors.initials: J
authors.lastname: Song
keywords: 3D nanoconfinement; 3D vertical array pixels; nanorod image sensors; photon-effect transistors; ultrahigh-resolution image sensors