title: Landau levels and magneto-transport property of monolayer phosphorene.
abstract: We investigate theoretically the Landau levels (LLs) and magneto-transport properties of phosphorene under a perpendicular magnetic field within the framework of the effective k·p Hamiltonian and tight-binding (TB) model. At low field regime, we find that the LLs linearly depend both on the LL index n and magnetic field B, which is similar with that of conventional semiconductor two-dimensional electron gas. The Landau splittings of conduction and valence band are different and the wavefunctions corresponding to the LLs are strongly anisotropic due to the different anisotropic effective masses. An analytical expression for the LLs in low energy regime is obtained via solving the decoupled Hamiltonian, which agrees well with the numerical calculations. At high magnetic regime, a self-similar Hofstadter butterfly (HB) spectrum is obtained by using the TB model. The HB spectrum is consistent with the LL fan calculated from the effective k·p theory in a wide regime of magnetic fields. We find the LLs of phosphorene nanoribbon depend strongly on the ribbon orientation due to the anisotropic hopping parameters. The Hall and the longitudinal conductances (resistances) clearly reveal the structure of LLs.
authors.affiliation: SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.|Department of Physics and Key Laboratory for Low-Dimensional Structures and Quantum Manipulation (Ministry of Education), Hunan Normal University, Changsha 410081, China.
authors.forename: X Y
authors.initials: XY
authors.lastname: Zhou
authors.affiliation: SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
authors.forename: R
authors.initials: R
authors.lastname: Zhang
authors.affiliation: SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
authors.forename: J P
authors.initials: JP
authors.lastname: Sun
authors.affiliation: SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
authors.forename: Y L
authors.initials: YL
authors.lastname: Zou
authors.affiliation: SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
authors.forename: D
authors.initials: D
authors.lastname: Zhang
authors.affiliation: SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
authors.forename: W K
authors.initials: WK
authors.lastname: Lou
authors.affiliation: Department of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410004, China.
authors.forename: F
authors.initials: F
authors.lastname: Cheng
authors.affiliation: Department of Physics and Key Laboratory for Low-Dimensional Structures and Quantum Manipulation (Ministry of Education), Hunan Normal University, Changsha 410081, China.
authors.forename: G H
authors.initials: GH
authors.lastname: Zhou
authors.affiliation: Department of Physics, Zhejiang Normal University, Jinhua 321004, China.
authors.forename: F
authors.initials: F
authors.lastname: Zhai
authors.affiliation: SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
authors.forename: Kai
authors.initials: K
authors.lastname: Chang