title: Microwave-assisted solution-liquid-solid growth of Ge1-xSnx nanowires with high tin content.
abstract: A microwave assisted growth procedure for the first bottom-up synthesis of germanium tin alloy (Ge1-xSnx) nanowires with constant diameter along their axis was developed. Ge1-xSnx nanowires with mean diameters of 190 ± 30 nm and a homogeneous distribution of 12.4 ± 0.7% Sn in Ge have been synthesized.
authors.affiliation: Vienna University of Technology, Institute of Materials Chemistry, Getreidemarkt 9/BC/02, 1060 Vienna, Austria. sven.barth@tuwien.ac.at.
authors.forename: Sven
authors.initials: S
authors.lastname: Barth
authors.forename: Michael S
authors.initials: MS
authors.lastname: Seifner
authors.forename: Johannes
authors.initials: J
authors.lastname: Bernardi