title: Site-Specific Substitutional Boron Doping of Semiconducting Armchair Graphene Nanoribbons.
abstract: A fundamental requirement for the development of advanced electronic device architectures based on graphene nanoribbon (GNR) technology is the ability to modulate the band structure and charge carrier concentration by substituting specific carbon atoms in the hexagonal graphene lattice with p- or n-type dopant heteroatoms. Here we report the atomically precise introduction of group III dopant atoms into bottom-up fabricated semiconducting armchair GNRs (AGNRs). Trigonal-planar B atoms along the backbone of the GNR share an empty p-orbital with the extended π-band for dopant functionality. Scanning tunneling microscopy (STM) topography reveals a characteristic modulation of the local density of states along the backbone of the GNR that is superimposable with the expected position and concentration of dopant B atoms. First-principles calculations support the experimental findings and provide additional insight into the band structure of B-doped 7-AGNRs.
authors.forename: Ryan R
authors.initials: RR
authors.lastname: Cloke
authors.forename: Tomas
authors.initials: T
authors.lastname: Marangoni
authors.forename: Giang D
authors.initials: GD
authors.lastname: Nguyen
authors.forename: Trinity
authors.initials: T
authors.lastname: Joshi
authors.forename: Daniel J
authors.initials: DJ
authors.lastname: Rizzo
authors.forename: Christopher
authors.initials: C
authors.lastname: Bronner
authors.forename: Ting
authors.initials: T
authors.lastname: Cao
authors.affiliation: §Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
authors.forename: Steven G
authors.initials: SG
authors.lastname: Louie
authors.affiliation: §Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.|⊥Kavli Energy NanoSciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
authors.forename: Michael F
authors.initials: MF
authors.lastname: Crommie
authors.affiliation: §Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.|⊥Kavli Energy NanoSciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
authors.forename: Felix R
authors.initials: FR
authors.lastname: Fischer
mesh_terms: D001896:Boron Compounds / Q000737:chemistry*; D018360:Crystallography, X-Ray; D006108:Graphite / Q000737:chemistry*; D008958:Models, Molecular; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D012666:Semiconductors
chemical_list: D001896:Boron Compounds; D006108:Graphite