title: Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced Properties.
abstract: We have successfully fabricated and characterized highly uniform nanopatterned graphene (NPG). Thin anodized aluminum oxide nanomask was prepared by facile self-assembly technique without using polymer buffer layer, which was utilized as a direct-contact template for oxygen plasma etch to produce near-periodic, small-neck-width NPG. The NPG exhibits a homogeneous mesh structure with an average neck width as small as ~11 nm. The highly uniform 11-nm neck width creates a quantum confinement in NPG, which has led to a record bandgap opening of ~200 meV in graphene for the given level of neck width. Electronic characterization of single-layer NPG field-effect transistors (FETs) was performed, which demonstrated a high on-off switching ratio. We found that the NPG allows for experimental confirmation of the relationship between electrical conductance and bandgap. This work also demonstrates that our direct-contact, self-assembled mask lithography is a pathway for low-cost, high-throughput, large-scale nanomanufacturing of graphene nanodevices.
authors.affiliation: Materials Science and Engineering, University of California, San Diego, La Jolla, CA, 92093, USA.
authors.forename: Duyoung
authors.initials: D
authors.lastname: Choi
authors.forename: Cihan
authors.initials: C
authors.lastname: Kuru
authors.forename: Youngjin
authors.initials: Y
authors.lastname: Kim
authors.forename: Gunwoo
authors.initials: G
authors.lastname: Kim
authors.forename: Taekyoung
authors.initials: T
authors.lastname: Kim
authors.forename: Renkun
authors.initials: R
authors.lastname: Chen
authors.forename: Sungho
authors.initials: S
authors.lastname: Jin