title: Quantitative operando visualization of the energy band depth profile in solar cells.
abstract: The energy band alignment in solar cell devices is critically important because it largely governs elementary photovoltaic processes, such as the generation, separation, transport, recombination and collection of charge carriers. Despite the expenditure of considerable effort, the measurement of energy band depth profiles across multiple layers has been extremely challenging, especially for operando devices. Here we present direct visualization of the surface potential depth profile over the cross-sections of operando organic photovoltaic devices using scanning Kelvin probe microscopy. The convolution effect due to finite tip size and cantilever beam crosstalk has previously prohibited quantitative interpretation of scanning Kelvin probe microscopy-measured surface potential depth profiles. We develop a bias voltage-compensation method to address this critical problem and obtain quantitatively accurate measurements of the open-circuit voltage, built-in potential and electrode potential difference.
authors.affiliation: i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.|Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information &Quantum Physics, University of Science and Technology of China, Hefei 230026, China.
authors.forename: Qi
authors.initials: Q
authors.lastname: Chen
authors.affiliation: i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
authors.forename: Lin
authors.initials: L
authors.lastname: Mao
authors.affiliation: i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.|Advanced Opto-electronic Materials Lab of Soochow University, Department of Polymer Science and Engineering, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, China.
authors.forename: Yaowen
authors.initials: Y
authors.lastname: Li
authors.affiliation: Division of Nanobiomedicine, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
authors.forename: Tao
authors.initials: T
authors.lastname: Kong
authors.affiliation: Division of Printed Electronics, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
authors.forename: Na
authors.initials: N
authors.lastname: Wu
authors.affiliation: Division of Printed Electronics, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
authors.forename: Changqi
authors.initials: C
authors.lastname: Ma
authors.affiliation: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
authors.forename: Sai
authors.initials: S
authors.lastname: Bai
authors.affiliation: State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
authors.forename: Yizheng
authors.initials: Y
authors.lastname: Jin
authors.affiliation: i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
authors.forename: Dan
authors.initials: D
authors.lastname: Wu
authors.affiliation: i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Lu
authors.affiliation: Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information &Quantum Physics, University of Science and Technology of China, Hefei 230026, China.
authors.forename: Bing
authors.initials: B
authors.lastname: Wang
authors.affiliation: i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
authors.forename: Liwei
authors.initials: L
authors.lastname: Chen