title: Enhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene.
abstract: Resistive random access memory (ReRAM) devices have been extensively investigated resulting in significant enhancement of switching properties. However fluctuations in switching parameters are still critical weak points which cause serious failures during 'reading' and 'writing' operations of ReRAM devices. It is believed that such fluctuations may be originated by random creation and rupture of conducting filaments inside ReRAM oxides. Here, we introduce defective monolayer graphene between an oxide film and an electrode to induce confined current path distribution inside the oxide film, and thus control the creation and rupture of conducting filaments. The ReRAM device with an atomically thin interlayer of defective monolayer graphene reveals much reduced fluctuations in switching parameters compared to a conventional one. Our results demonstrate that defective monolayer graphene paves the way to reliable ReRAM devices operating under confined current path distribution.
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul, 143-701, Korea.
authors.forename: Keundong
authors.initials: K
authors.lastname: Lee
authors.affiliation: 1] Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul, 143-701, Korea [2] Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea.
authors.forename: Inrok
authors.initials: I
authors.lastname: Hwang
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul, 143-701, Korea.
authors.forename: Sangik
authors.initials: S
authors.lastname: Lee
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul, 143-701, Korea.
authors.forename: Sungtaek
authors.initials: S
authors.lastname: Oh
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul, 143-701, Korea.
authors.forename: Dukhyun
authors.initials: D
authors.lastname: Lee
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul, 143-701, Korea.
authors.forename: Cheol Kyeom
authors.initials: CK
authors.lastname: Kim
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul, 143-701, Korea.
authors.forename: Yoonseung
authors.initials: Y
authors.lastname: Nam
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul, 143-701, Korea.
authors.forename: Sahwan
authors.initials: S
authors.lastname: Hong
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul, 143-701, Korea.
authors.forename: Chansoo
authors.initials: C
authors.lastname: Yoon
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul, 143-701, Korea.
authors.forename: Robert B
authors.initials: RB
authors.lastname: Morgan
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul, 143-701, Korea.
authors.forename: Hakseong
authors.initials: H
authors.lastname: Kim
authors.affiliation: Department of Physics, Sejong University, Seoul, 121-742, Korea.
authors.forename: Sunae
authors.initials: S
authors.lastname: Seo
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi-do, 466-712, Korea.
authors.forename: David H
authors.initials: DH
authors.lastname: Seo
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul, 143-701, Korea.
authors.forename: Sangwook
authors.initials: S
authors.lastname: Lee
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul, 143-701, Korea.
authors.forename: Bae Ho
authors.initials: BH
authors.lastname: Park