title: Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening.
abstract: In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO2multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications.
authors.affiliation: 1] College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003 China [2] Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, China [3] Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0407, USA.
authors.forename: Wei
authors.initials: W
authors.lastname: Li
authors.affiliation: 1] College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003 China [2] Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, China.
authors.forename: Shaolei
authors.initials: S
authors.lastname: Wang
authors.affiliation: 1] College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003 China [2] Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, China.
authors.forename: Mingyue
authors.initials: M
authors.lastname: Hu
authors.affiliation: 1] College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003 China [2] Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, China.
authors.forename: Sufeng
authors.initials: S
authors.lastname: He
authors.affiliation: 1] College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003 China [2] Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, China.
authors.forename: Pengpeng
authors.initials: P
authors.lastname: Ge
authors.affiliation: 1] College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003 China [2] Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, China.
authors.forename: Jing
authors.initials: J
authors.lastname: Wang
authors.affiliation: 1] College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003 China [2] Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, China.
authors.forename: Yan Yan
authors.initials: YY
authors.lastname: Guo
authors.affiliation: Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0407, USA.
authors.forename: Liu
authors.initials: L
authors.lastname: Zhaowei