title: Probing the nanoscale Schottky barrier of metal/semiconductor interfaces of Pt/CdSe/Pt nanodumbbells by conductive-probe atomic force microscopy.
abstract: The electrical nature of the nanoscale contact between metal nanodots and semiconductor rods has drawn significant interest because of potential applications for metal-semiconductor hybrid nanostructures in energy conversion or heterogeneous catalysis. Here, we studied the nanoscale electrical character of the Pt/CdSe junction in Pt/CdSe/Pt nanodumbbells on connected Au islands by conductive-probe atomic force microscopy under ultra-high vacuum. Current-voltage plots measured in contact mode revealed Schottky barrier heights of individual nanojunctions of 0.41 ± 0.02 eV. The measured value of the Schottky barrier is significantly lower than that of planar thin-film diodes because of a reduction in the barrier width and enhanced tunneling probability at the interface.
authors.affiliation: Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon 305-701, Korea. jeongypark@kaist.ac.kr.
authors.forename: Sangku
authors.initials: S
authors.lastname: Kwon
authors.forename: Seon Joo
authors.initials: SJ
authors.lastname: Lee
authors.forename: Sun Mi
authors.initials: SM
authors.lastname: Kim
authors.forename: Youngkeun
authors.initials: Y
authors.lastname: Lee
authors.forename: Hyunjoon
authors.initials: H
authors.lastname: Song
authors.forename: Jeong Young
authors.initials: JY
authors.lastname: Park