title: Optical constants of In(x)Ga(1-x)N (0 ≤ x ≤ 0.73) in the visible and near-infrared wavelength regimes.
abstract: Complex refractive indices of In(x)Ga(1-x)N epitaxial layers have been determined from analysis of data obtained by spectroscopic ellipsometry. The measurements were made in the wavelength range of 400-1687 nm. The samples were grown by plasma-assisted molecular beam epitaxy on (001) silicon substrate and are of the wurtzite crystalline form. A comparison of the fundamental absorption edge derived from analysis of measured data and the measured photoluminescence peak emission energy indicates a Stokes shift present in the alloys.
authors.forename: Arnab
authors.initials: A
authors.lastname: Hazari
authors.forename: Aniruddha
authors.initials: A
authors.lastname: Bhattacharya
authors.forename: Thomas
authors.initials: T
authors.lastname: Frost
authors.forename: Songrui
authors.initials: S
authors.lastname: Zhao
authors.forename: Md Zunaid
authors.initials: MZ
authors.lastname: Baten
authors.forename: Zetian
authors.initials: Z
authors.lastname: Mi
authors.forename: Pallab
authors.initials: P
authors.lastname: Bhattacharya