title: AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers.
abstract: We report on the design, fabrication and analysis of vertical-cavity surface-emitting transistor-lasers (T-VCSELs) based on the homogeneous integration of an InGaAs/GaAs VCSEL and an AlGaAs/GaAs pnp-heterojunction bipolar transistor (HBT). Epitaxial regrowth confinement, modulation doping, intracavity contacting and non-conducting mirrors are used to ensure a low-loss structure, and a variety of design variations are investigated for a proper internal biasing and current injection to ensure a wide operating range. Optimized devices show mW-range output power, mA-range base threshold current and high-temperature operation to at least 60°C with the transistor in its active mode of operation for base currents well beyond threshold. Current confinement schemes based on pnp-blocking layers or a buried tunnel junction are investigated as well as asymmetric current injection for reduced extrinsic resistances.
authors.forename: Y
authors.initials: Y
authors.lastname: Xiang
authors.forename: C
authors.initials: C
authors.lastname: Reuterskiöld-Hedlund
authors.forename: X
authors.initials: X
authors.lastname: Yu
authors.forename: C
authors.initials: C
authors.lastname: Yang
authors.forename: T
authors.initials: T
authors.lastname: Zabel
authors.forename: M
authors.initials: M
authors.lastname: Hammar
authors.forename: M N
authors.initials: MN
authors.lastname: Akram