title: Capacitance-Voltage Characteristics of Thin-film Transistors Fabricated with Solution-Processed Semiconducting Carbon Nanotube Networks.
abstract: We report the capacitance-voltage (C-V) measurements on thin-film transistors (TFTs) using solution-processed semiconducting carbon nanotube networks with different densities and channel lengths. From the measured C-V characteristics, gate capacitance and field-effect mobility (up to ~50 cm(2) V(-1) s(-1)) of the TFTs were evaluated with better precision compared with the results obtained from calculated gate capacitance. The C-V characteristics measured under different frequencies further enabled the extraction and analysis of the interface trap density at the nanotube-dielectric layer interface, which was found to increase significantly as the network density increases. The results presented here indicate that C-V measurement is a powerful tool to assess the electrical performance and to investigate the carrier transport mechanism of TFTs based on carbon nanotubes.
authors.affiliation: Department of Electrical and Computing Engineering, Michigan State University, East Lansing, MI, 48824, USA.
authors.forename: Le
authors.initials: L
authors.lastname: Cai
authors.forename: Suoming
authors.initials: S
authors.lastname: Zhang
authors.forename: Jinshui
authors.initials: J
authors.lastname: Miao
authors.forename: Qinqin
authors.initials: Q
authors.lastname: Wei
authors.forename: Chuan
authors.initials: C
authors.lastname: Wang