title: Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction.
abstract: A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.
authors.affiliation: Department of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, Spain. eloi_marigo@silterra.com.
authors.forename: Eloi
authors.initials: E
authors.lastname: Marigó
authors.affiliation: Instituto de Microelectrónica de Barcelona (IMB-CNM-CSIC), Campus UAB, Barcelona 08193, Spain. marc.sansaperna@cea.fr.
authors.forename: Marc
authors.initials: M
authors.lastname: Sansa
authors.affiliation: Instituto de Microelectrónica de Barcelona (IMB-CNM-CSIC), Campus UAB, Barcelona 08193, Spain.
authors.forename: Francesc
authors.initials: F
authors.lastname: Pérez-Murano
authors.affiliation: Department of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, Spain. arantxa.uranga@uab.es.
authors.forename: Arantxa
authors.initials: A
authors.lastname: Uranga
authors.affiliation: Department of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, Spain. nuria.barniol@uab.es.
authors.forename: Núria
authors.initials: N
authors.lastname: Barniol
keywords: CMOS-NEMS; NEMS; mechanical resonators; piezoresistive transduction; polysilicon nanowires