title: Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiO(x) van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed.
abstract: Molybdenum disulfide (MoS2) nanosheet, one of two-dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors. With an apparent energy band gap, it certainly provides a high carrier mobility, superior subthreshold swing, and ON/OFF ratio in field-effect transistors (FETs). However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal-insulator-semiconductor (MIS) FETs, where the transport behavior of conducting carriers located at the insulator/MoS2 interface is unavoidably interfered by the interface traps and gate voltage. Moreover, thin MoS2 MISFETs have always shown large hysteresis with unpredictable negative threshold voltages. Here, we for the first time report MoS2-based metal semiconductor field-effect transistors (MESFETs) using NiOx Schottky electrode which makes van der Waals interface with MoS2. We thus expect that the maximum mobilities or carrier transport behavior of the Schottky devices may hardly be interfered by interface traps or an on-state gate field. Our MESFETs with a few and ∼10 layer MoS2 demonstrate intrinsic-like high mobilities of 500-1200 cm(2)/(V s) at a certain low threshold voltage between -1 and -2 V without much hysteresis. Moreover, they work as a high speed and highly sensitive phototransistor with 2 ms switching and ∼5000 A/W, respectively, supporting their high intrinsic mobility results.
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
authors.forename: Hee Sung
authors.initials: HS
authors.lastname: Lee
authors.affiliation: Center for Computational Studies of Advanced Electronic Material Properties, Yonsei University , Seoul 120-749, Korea.
authors.forename: Seung Su
authors.initials: SS
authors.lastname: Baik
authors.affiliation: Department of Physics, Kunsan National University , 558 daehak-ro, Gunsan, Jeonbuk 573-701, Korea.
authors.forename: Kimoon
authors.initials: K
authors.lastname: Lee
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
authors.forename: Sung-Wook
authors.initials: SW
authors.lastname: Min
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
authors.forename: Pyo Jin
authors.initials: PJ
authors.lastname: Jeon
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
authors.forename: Jin Sung
authors.initials: JS
authors.lastname: Kim
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
authors.forename: Kyujin
authors.initials: K
authors.lastname: Choi
authors.affiliation: Center for Computational Studies of Advanced Electronic Material Properties, Yonsei University , Seoul 120-749, Korea.
authors.forename: Hyoung Joon
authors.initials: HJ
authors.lastname: Choi
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
authors.forename: Jae Hoon
authors.initials: JH
authors.lastname: Kim
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
authors.forename: Seongil
authors.initials: S
authors.lastname: Im
keywords: 2D nanosheet MoS2; Hall measurement; MESFET; NiOx; Schottky junction; van der Waals interface