title: Efficient Direct Reduction of Graphene Oxide by Silicon Substrate.
abstract: Graphene has been studied for various applications due to its excellent properties. Graphene film fabrication from solutions of graphene oxide (GO) have attracted considerable attention because these procedures are suitable for mass production. GO, however, is an insulator, and therefore a reduction process is required to make the GO film conductive. These reduction procedures require chemical reducing agents or high temperature annealing. Herein, we report a novel direct and simple reduction procedure of GO by silicon, which is the most widely used material in the electronics industry. In this study, we also used silicon nanosheets (SiNSs) as reducing agents for GO. The reducing effect of silicon was confirmed by various characterization methods. Furthermore, the silicon wafer was also used as a reducing template to create a reduced GO (rGO) film on a silicon substrate. By this process, a pure rGO film can be formed without the impurities that normally come from chemical reducing agents. This is an easy and environmentally friendly method to prepare large scale graphene films on Si substrates.
authors.affiliation: Nano-Electro Mechanical Device Laboratory, School of Mechanical Engineering, Yonsei University, Seoul 120-749, South Korea.
authors.forename: Su Chan
authors.initials: SC
authors.lastname: Lee
authors.affiliation: 1] Nano-Electro Mechanical Device Laboratory, School of Mechanical Engineering, Yonsei University, Seoul 120-749, South Korea [2] Department of Dyestuff Technology, Institute of Chemical Technology, Matunga, Mumbai-400 019, India.
authors.forename: Surajit
authors.initials: S
authors.lastname: Some
authors.affiliation: Global E3 Institute and Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea.
authors.forename: Sung Wook
authors.initials: SW
authors.lastname: Kim
authors.affiliation: Nano-Electro Mechanical Device Laboratory, School of Mechanical Engineering, Yonsei University, Seoul 120-749, South Korea.
authors.forename: Sun Jun
authors.initials: SJ
authors.lastname: Kim
authors.affiliation: Nanobio Device Laboratory, School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, South Korea.
authors.forename: Jungmok
authors.initials: J
authors.lastname: Seo
authors.affiliation: Nano-Electro Mechanical Device Laboratory, School of Mechanical Engineering, Yonsei University, Seoul 120-749, South Korea.
authors.forename: Jooho
authors.initials: J
authors.lastname: Lee
authors.affiliation: Nanobio Device Laboratory, School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, South Korea.
authors.forename: Taeyoon
authors.initials: T
authors.lastname: Lee
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, South Korea.
authors.forename: Jong-Hyun
authors.initials: JH
authors.lastname: Ahn
authors.affiliation: Global E3 Institute and Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea.
authors.forename: Heon-Jin
authors.initials: HJ
authors.lastname: Choi
authors.affiliation: Nano-Electro Mechanical Device Laboratory, School of Mechanical Engineering, Yonsei University, Seoul 120-749, South Korea.
authors.forename: Seong Chan
authors.initials: SC
authors.lastname: Jun