title: Bad-Metal Behavior Reveals Mott Quantum Criticality in Doped Hubbard Models.
abstract: Bad-metal (BM) behavior featuring linear temperature dependence of the resistivity extending to well above the Mott-Ioffe-Regel (MIR) limit is often viewed as one of the key unresolved signatures of strong correlation. Here we associate the BM behavior with the Mott quantum criticality by examining a fully frustrated Hubbard model where all long-range magnetic orders are suppressed, and the Mott problem can be rigorously solved through dynamical mean-field theory. We show that for the doped Mott insulator regime, the coexistence dome and the associated first-order Mott metal-insulator transition are confined to extremely low temperatures, while clear signatures of Mott quantum criticality emerge across much of the phase diagram. Remarkable scaling behavior is identified for the entire family of resistivity curves, with a quantum critical region covering the entire BM regime, providing not only insight, but also quantitative understanding around the MIR limit, in agreement with the available experiments.
authors.affiliation: Scientific Computing Laboratory, Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia.
authors.forename: J
authors.initials: J
authors.lastname: Vučičević
authors.affiliation: Scientific Computing Laboratory, Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia.
authors.forename: D
authors.initials: D
authors.lastname: Tanasković
authors.affiliation: Laboratoire de Physique des Solides, CNRS-UMR8502, Université de Paris-Sud, Orsay 91405, France and Departamento de Física, FCEN, Universidad de Buenos Aires, Ciudad Universitaria Pabellón I, (1428) Buenos Aires, Argentina.
authors.forename: M J
authors.initials: MJ
authors.lastname: Rozenberg
authors.affiliation: Department of Physics and National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32306, USA.
authors.forename: V
authors.initials: V
authors.lastname: Dobrosavljević