title: Electronics with Correlated Oxides: SrVO(3)/SrTiO(3) as a Mott Transistor.
abstract: We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO(3) on a SrTiO(3) substrate are insulating: the thin film geometry lifts the orbital degeneracy, which in turn triggers a first-order Mott-Hubbard transition. Two layers of SrVO(3) are just at the verge of a Mott-Hubbard transition and hence ideally suited for technological applications of the Mott-Hubbard transition: the heterostructure is highly sensitive to strain, electric field, and temperature. A gate voltage can also switch between metal (ON) and insulator (OFF), so that a transistor with ideal ON-OFF switching properties is realized.
authors.affiliation: Institute of Solid State Physics, Vienna University of Technology, A-1040 Vienna, Austria.
authors.forename: Zhicheng
authors.initials: Z
authors.lastname: Zhong
authors.affiliation: Institute of Solid State Physics, Vienna University of Technology, A-1040 Vienna, Austria.
authors.forename: Markus
authors.initials: M
authors.lastname: Wallerberger
authors.affiliation: Institute of Solid State Physics, Vienna University of Technology, A-1040 Vienna, Austria.
authors.forename: Jan M
authors.initials: JM
authors.lastname: Tomczak
authors.affiliation: Institute of Solid State Physics, Vienna University of Technology, A-1040 Vienna, Austria.
authors.forename: Ciro
authors.initials: C
authors.lastname: Taranto
authors.affiliation: Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.
authors.forename: Nicolaus
authors.initials: N
authors.lastname: Parragh
authors.affiliation: Institute of Solid State Physics, Vienna University of Technology, A-1040 Vienna, Austria.
authors.forename: Alessandro
authors.initials: A
authors.lastname: Toschi
authors.affiliation: Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.
authors.forename: Giorgio
authors.initials: G
authors.lastname: Sangiovanni
authors.affiliation: Institute of Solid State Physics, Vienna University of Technology, A-1040 Vienna, Austria.
authors.forename: Karsten
authors.initials: K
authors.lastname: Held