title: Quantum dot semiconductor disk laser at 1.3  μm.
abstract: We present a semiconductor disk laser (SDL) emitting at the wavelength of 1.3 μm. The active region of the SDL comprises InAs quantum dots (QDs) that are embedded into InGaAs quantum wells (QWs). An output power over 200 mW is obtained at 15°C, which represents the highest output power reported from QD-based SDLs in this wavelength range. The results demonstrate the feasibility of QD-based gain media for fabricating SDLs emitting at 1.3 μm.
authors.forename: Antti
authors.initials: A
authors.lastname: Rantamäki
authors.forename: Grigorii S
authors.initials: GS
authors.lastname: Sokolovskii
authors.forename: Sergey A
authors.initials: SA
authors.lastname: Blokhin
authors.forename: Vladislav V
authors.initials: VV
authors.lastname: Dudelev
authors.forename: Ksenia K
authors.initials: KK
authors.lastname: Soboleva
authors.forename: Mikhail A
authors.initials: MA
authors.lastname: Bobrov
authors.forename: Alexander G
authors.initials: AG
authors.lastname: Kuzmenkov
authors.forename: Alexey P
authors.initials: AP
authors.lastname: Vasil'ev
authors.forename: Andrey G
authors.initials: AG
authors.lastname: Gladyshev
authors.forename: Nikolai A
authors.initials: NA
authors.lastname: Maleev
authors.forename: Victor M
authors.initials: VM
authors.lastname: Ustinov
authors.forename: Oleg
authors.initials: O
authors.lastname: Okhotnikov