title: Electronic Properties of Bilayer Graphene Strongly Coupled to Interlayer Stacking and an External Electric Field.
abstract: Bilayer graphene (BLG) with a tunable band gap appears interesting as an alternative to graphene for practical applications; thus, its transport properties are being actively pursued. Using density functional theory and perturbation analysis, we investigated, under an external electric field, the electronic properties of BLG in various stackings relevant to recently observed complex structures. We established the first phase diagram summarizing the stacking-dependent gap openings of BLG for a given field. We further identified high-density midgap states, localized on grain boundaries, even under a strong field, which can considerably reduce the overall transport gap.
authors.affiliation: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: Changwon
authors.initials: C
authors.lastname: Park
authors.affiliation: Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, Korea.
authors.forename: Junga
authors.initials: J
authors.lastname: Ryou
authors.affiliation: Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, Korea.
authors.forename: Suklyun
authors.initials: S
authors.lastname: Hong
authors.affiliation: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: Bobby G
authors.initials: BG
authors.lastname: Sumpter
authors.affiliation: Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, Korea.
authors.forename: Gunn
authors.initials: G
authors.lastname: Kim
authors.affiliation: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: Mina
authors.initials: M
authors.lastname: Yoon