title: Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon.
abstract: A germanium-on-insulator (GOI) p-i-n photodetector, monolithically integrated on a silicon (Si) substrate, is demonstrated. GOI is formed by lateral-overgrowth (LAT-OVG) of Ge on silicon dioxide (SiO(2)) through windows etched in SiO(2) on Si. The photodetector shows excellent diode characteristics with high on/off ratio (6 × 10(4)), low dark current, and flat reverse current-voltage (I-V) characteristics. Enhanced light absorption up to 1550 nm is observed due to the residual biaxial tensile strain induced during the epitaxial growth of Ge caused by cooling after the deposition. This truly Si-compatible Ge photodetector using monolithic integration enables new opportunities for high-performance GOI based photonic devices on Si platform.
authors.forename: Ju Hyung
authors.initials: JH
authors.lastname: Nam
authors.forename: Farzaneh
authors.initials: F
authors.lastname: Afshinmanesh
authors.forename: Donguk
authors.initials: D
authors.lastname: Nam
authors.forename: Woo Shik
authors.initials: WS
authors.lastname: Jung
authors.forename: Theodore I
authors.initials: TI
authors.lastname: Kamins
authors.forename: Mark L
authors.initials: ML
authors.lastname: Brongersma
authors.forename: Krishna C
authors.initials: KC
authors.lastname: Saraswat