title: All-carbon based graphene field effect transistor with graphitic electrodes fabricated by e-beam direct writing on PMMA.
abstract: A so called all-carbon based graphene field effect transistor (GFET) in which the electrodes are composed of graphite-like nano-sheets instead of metals in the traditional devices is fabricated by one-step e-beam direct writing (EBDW). It is also found that the graphite-like nano-sheets in electrodes are perpendicular to the channel graphene, which is confirmed by the transmission electron microscopy (HRTEM). The one-step fabrication of the carbonaceous electrodes is more convenient and lower-cost comparing to the preparation of traditional metal electrodes and can be applied to many other nano-electronic devices.
authors.affiliation: College of Science, National University of Defense Technology, Changsha 410073, P. R. China.
authors.forename: Wei
authors.initials: W
authors.lastname: Chen
authors.affiliation: College of Science, National University of Defense Technology, Changsha 410073, P. R. China.
authors.forename: Yayun
authors.initials: Y
authors.lastname: Yu
authors.affiliation: College of Science, National University of Defense Technology, Changsha 410073, P. R. China.
authors.forename: Xiaoming
authors.initials: X
authors.lastname: Zheng
authors.affiliation: 1] College of Science, National University of Defense Technology, Changsha 410073, P. R. China [2] State Key Laboratory of high Performance Computing, National University of Defense Technology, Changsha 410073, P. R. China.
authors.forename: Shiqiao
authors.initials: S
authors.lastname: Qin
authors.affiliation: College of Science, National University of Defense Technology, Changsha 410073, P. R. China.
authors.forename: Fei
authors.initials: F
authors.lastname: Wang
authors.affiliation: College of Science, National University of Defense Technology, Changsha 410073, P. R. China.
authors.forename: Jingyue
authors.initials: J
authors.lastname: Fang
authors.affiliation: College of Science, National University of Defense Technology, Changsha 410073, P. R. China.
authors.forename: Guang
authors.initials: G
authors.lastname: Wang
authors.affiliation: Department of Physics, Nanchang University, Nanchang 330031, P. R. China.
authors.forename: Chaocheng
authors.initials: C
authors.lastname: Wang
authors.affiliation: 1] College of Science, National University of Defense Technology, Changsha 410073, P. R. China [2] Department of Physics, Nanchang University, Nanchang 330031, P. R. China.
authors.forename: Li
authors.initials: L
authors.lastname: Wang
authors.affiliation: College of Science, National University of Defense Technology, Changsha 410073, P. R. China.
authors.forename: Gang
authors.initials: G
authors.lastname: Peng
authors.affiliation: 1] College of Science, National University of Defense Technology, Changsha 410073, P. R. China [2] State Key Laboratory of high Performance Computing, National University of Defense Technology, Changsha 410073, P. R. China.
authors.forename: Xue-Ao
authors.initials: XA
authors.lastname: Zhang