title: High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.
abstract: Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (∼38) and small static power (picowatts), paving the way for low power electronic system in 2D materials.
authors.affiliation: †Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Lili
authors.initials: L
authors.lastname: Yu
authors.affiliation: †Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Ahmad
authors.initials: A
authors.lastname: Zubair
authors.affiliation: ‡Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.
authors.forename: Elton J G
authors.initials: EJ
authors.lastname: Santos
authors.affiliation: †Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Xu
authors.initials: X
authors.lastname: Zhang
authors.affiliation: †Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Yuxuan
authors.initials: Y
authors.lastname: Lin
authors.affiliation: †Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Yuhao
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: †Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Tomás
authors.initials: T
authors.lastname: Palacios
mesh_terms: D004867:Equipment Design; D008670:Metals / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D018036:Selenium Compounds / Q000737:chemistry*; D012666:Semiconductors; D017973:Tungsten Compounds / Q000737:chemistry*
chemical_list: D008670:Metals; D010087:Oxides; D018036:Selenium Compounds; D017973:Tungsten Compounds
keywords: CMOS electronics; Transition metal dichalcogenides; air stable doping; complementary logic; integrated circuits; low power electronics