title: Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament.
abstract: The filament in aAu/Ta2 O5 /Au system is analyzed and determined to be a nanoscaled TaO2-x filament. A shrunken anode localizes the filament formation and the defect boundary leads to faster accumulation of oxygen vacancies. The defect changes the switching domination between electron transport and oxygen-vacancy migration. The migration of oxygen vacancies limits the filament dynamics, indicating the crucial role played by oxygen defects.
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 30010, Taiwan.
authors.forename: Jui-Yuan
authors.initials: JY
authors.lastname: Chen
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 30010, Taiwan.
authors.forename: Chun-Wei
authors.initials: CW
authors.lastname: Huang
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 30010, Taiwan.
authors.forename: Chung-Hua
authors.initials: CH
authors.lastname: Chiu
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 30010, Taiwan.
authors.forename: Yu-Ting
authors.initials: YT
authors.lastname: Huang
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 30010, Taiwan.
authors.forename: Wen-Wei
authors.initials: WW
authors.lastname: Wu
keywords: in situ TEM; memristors; nanofilaments; resistive switching; valence change memories (VCM)