title: Ultra-broadband and high-responsive photodetectors based on bismuth film at room temperature.
abstract: Bismuth (Bi) has undergone researches for dozens of years on account of its abundant physics including the remarkably high mobility, exceptional large positive magnetoresistance and the coexistence of an insulating interior as well as metallic surfaces. Very recently, two-dimensional topologically-protected surface states immune to nonmagnetic perturbation such as surface oxidation and impurity scattering were experimentally demonstrated through systematic magnetotransport measurements, e.g. weak antilocalization effect and angular dependent Shubnikov-de Haas oscillations. Such robust metallic surface states, which are efficient in carrier transportation, along with its small bulk gap (14 meV) make Bi favored for high-responsive broadband photodetection. Here, we for the first time demonstrate the stable ultra-broadband photoresponse from 370 nm to 1550 nm with good reproducibility at room temperature based on a Bi photodetector. The fabricated device's responsivity approaches 250 mA/W, accompanied with a rise time of 0.9 s and a decay time of 1.9 s. The photocurrent is linear dependent on the voltage and incident power, offering good tunability for multi-purpose applications. Thickness-dependent conductance and photocurrent reveal that the bulk is the optically active layer while the surface channel is responsible for carrier transportation. These findings pave an avenue to develop ultra-broadband Bi photodetectors for the next-generation multifunctional optoelectronic devices.
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Physics &Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
authors.forename: J D
authors.initials: JD
authors.lastname: Yao
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Physics &Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
authors.forename: J M
authors.initials: JM
authors.lastname: Shao
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Physics &Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
authors.forename: G W
authors.initials: GW
authors.lastname: Yang