title: Broadband tunable InAs/InP quantum dot external-cavity laser emitting around 1.55 μm.
abstract: We report a broadband tunable external-cavity laser based on InAs/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. It is found that high AsH₃ flow during the interruption after QD deposition greatly promotes QD ripening, which improves the optical gain of QD active medium in lower energy states. Combined with anti-reflection/high-reflection facet coatings, a broadly tunable InAs/InP QD external-cavity laser was realized with a tuning range of 140.4 nm across wavelengths from 1436.6 nm to 1577 nm at a maximum output power of 6 mW.
authors.forename: F
authors.initials: F
authors.lastname: Gao
authors.forename: S
authors.initials: S
authors.lastname: Luo
authors.forename: H M
authors.initials: HM
authors.lastname: Ji
authors.forename: X G
authors.initials: XG
authors.lastname: Yang
authors.forename: P
authors.initials: P
authors.lastname: Liang
authors.forename: T
authors.initials: T
authors.lastname: Yang