title: Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells.
abstract: Three green light emitting InGaN/GaN multiple quantum well (MQW) structures with different In composition grown by metal-organic chemical vapor deposition are investigated by the X-ray diffraction and the temperature-dependent photoluminescence (PL) measurements. It is found that when the In composition increases in the InGaN/GaN MQWs, the PL spectral bandwidth may anomalously decrease with increasing temperature. The reduction of PL spectral bandwidth may be ascribed to the enhanced non-radiative recombination process which may lower the light emission efficiency of the localized luminescent centers with shallow localization energy in the high-In-content InGaN quantum wells and also cause a reduction of integrated PL intensity.
authors.forename: W
authors.initials: W
authors.lastname: Liu
authors.forename: D G
authors.initials: DG
authors.lastname: Zhao
authors.forename: D S
authors.initials: DS
authors.lastname: Jiang
authors.forename: P
authors.initials: P
authors.lastname: Chen
authors.forename: Z S
authors.initials: ZS
authors.lastname: Liu
authors.forename: J J
authors.initials: JJ
authors.lastname: Zhu
authors.forename: M
authors.initials: M
authors.lastname: Shi
authors.forename: D M
authors.initials: DM
authors.lastname: Zhao
authors.forename: X
authors.initials: X
authors.lastname: Li
authors.forename: J P
authors.initials: JP
authors.lastname: Liu
authors.forename: S M
authors.initials: SM
authors.lastname: Zhang
authors.forename: H
authors.initials: H
authors.lastname: Wang
authors.forename: H
authors.initials: H
authors.lastname: Yang
authors.forename: Y T
authors.initials: YT
authors.lastname: Zhang
authors.forename: G T
authors.initials: GT
authors.lastname: Du