title: Low-Dimensional Topological Crystalline Insulators.
abstract: Topological crystalline insulators (TCIs) are recently discovered topological phase with robust surface states residing on high-symmetry crystal surfaces. Different from conventional topological insulators (TIs), protection of surface states on TCIs comes from point-group symmetry instead of time-reversal symmetry in TIs. The distinct properties of TCIs make them promising candidates for the use in novel spintronics, low-dissipation quantum computation, tunable pressure sensor, mid-infrared detector, and thermoelectric conversion. However, similar to the situation in TIs, the surface states are always suppressed by bulk carriers, impeding the exploitation of topology-induced quantum phenomenon. One effective way to solve this problem is to grow low-dimensional TCIs which possess large surface-to-volume ratio, and thus profoundly increase the carrier contribution from topological surface states. Indeed, through persistent effort, researchers have obtained unique quantum transport phenomenon, originating from topological surface states, based on controllable growth of low-dimensional TCIs. This article gives a comprehensive review on the recent progress of controllable synthesis and topological surface transport of low-dimensional TCIs. The possible future direction about low-dimensional TCIs is also briefly discussed at the end of this paper.
authors.affiliation: National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors.forename: Qisheng
authors.initials: Q
authors.lastname: Wang
authors.affiliation: National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors.forename: Feng
authors.initials: F
authors.lastname: Wang
authors.affiliation: National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors.forename: Jie
authors.initials: J
authors.lastname: Li
authors.affiliation: National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors.forename: Zhenxing
authors.initials: Z
authors.lastname: Wang
authors.affiliation: National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors.forename: Xueying
authors.initials: X
authors.lastname: Zhan
authors.affiliation: National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors.forename: Jun
authors.initials: J
authors.lastname: He
keywords: insulators; low-dimensional TCIs; topological crystalline insulators; topological surface transport; tunable spintronic devices; van der Waals epitaxy