title: Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires.
abstract: Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help of droplet-engineering, we observe a significant narrowing of the diameter distribution of the final nanowire array with respect to the size distribution of the initial Ga droplets. Considering that the droplet serves as a nonequilibrium reservoir of a group III metal, we develop a model that demonstrates a self-equilibration effect on the droplet size in self-catalyzed III-V nanowires. This effect leads to arrays of nanowires with a high degree of uniformity regardless of the initial conditions, while the stationary diameter can be further finely tuned by varying the spacing of the array pitch on patterned Si substrates.
authors.affiliation: †St. Petersburg Academic University, Khlopina 8/3, 194021, St. Petersburg, Russia.|‡Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St. Petersburg, Russia.|§ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia.
authors.forename: V G
authors.initials: VG
authors.lastname: Dubrovskii
authors.affiliation: ∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.|⊥Sino-European School of Technology, Shanghai University, 99 Shangda Road, Shanghai, 200444, People's Republic of China.
authors.forename: T
authors.initials: T
authors.lastname: Xu
authors.affiliation: ∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.
authors.forename: A Díaz
authors.initials: AD
authors.lastname: Álvarez
authors.affiliation: ∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.|#CNRS-Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), Université de Toulouse, 7 avenue du colonel Roche, 31400 Toulouse, France.
authors.forename: S R
authors.initials: SR
authors.lastname: Plissard
authors.affiliation: ∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.|∇Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia.
authors.forename: P
authors.initials: P
authors.lastname: Caroff
authors.affiliation: ○CNRS-Laboratoire de Photonique et de Nanostructures (LPN), Route de Nozay, 91460 Marcoussis, France.
authors.forename: F
authors.initials: F
authors.lastname: Glas
authors.affiliation: ∥Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France.
authors.forename: B
authors.initials: B
authors.lastname: Grandidier
keywords: III−V nanowires; focusing effect; growth kinetics; self-catalyzed growth; silicon integration; size distribution