title: Self-Correcting Process for High Quality Patterning by Atomic Layer Deposition.
abstract: Nanoscale patterning of materials is widely used in a variety of device applications. Area selective atomic layer deposition (ALD) has shown promise for deposition of patterned structures with subnanometer thickness control. However, the current process is limited in its ability to achieve good selectivity for thicker films formed at higher number of ALD cycles. In this report, we demonstrate a strategy for achieving selective film deposition via a self-correcting process on patterned Cu/SiO2 substrates. We employ the intrinsically selective adsorption of octadecylphosphonic acid self-assembled monolayers on Cu over SiO2 surfaces to selectively create a resist layer only on Cu. ALD is then performed on the patterns to deposit a dielectric film. A mild etchant is subsequently used to selectively remove any residual dielectric film deposited on the Cu surface while leaving the dielectric film on SiO2 unaffected. The selectivity achieved after this treatment, measured by compositional analysis, is found to be 10 times greater than for conventional area selective ALD.
authors.affiliation: Department of Materials Science and Engineering and ‡Department of Chemical Engineering, Stanford University , Stanford, California 94305-5025, United States.
authors.forename: Fatemeh Sadat
authors.initials: FS
authors.lastname: Minaye Hashemi
authors.affiliation: Department of Materials Science and Engineering and ‡Department of Chemical Engineering, Stanford University , Stanford, California 94305-5025, United States.
authors.forename: Chaiya
authors.initials: C
authors.lastname: Prasittichai
authors.affiliation: Department of Materials Science and Engineering and ‡Department of Chemical Engineering, Stanford University , Stanford, California 94305-5025, United States.
authors.forename: Stacey F
authors.initials: SF
authors.lastname: Bent
keywords: Al2O3; area selective ALD; etching; self-assembled monolayers