title: Lithography-Free Fabrication of Core-Shell GaAs Nanowire Tunnel Diodes.
abstract: GaAs core-shell p-n junction tunnel diodes were demonstrated by combining vapor-liquid-solid growth with gallium oxide deposition by atomic layer deposition for electrical isolation. The characterization of an ensemble of core-shell structures was enabled by the use of a tungsten probe in a scanning electron microscope without the need for lithographic processing. Radial tunneling transport was observed, exhibiting negative differential resistance behavior with peak-to-valley current ratios of up to 3.1. Peak current densities of up to 2.1 kA/cm(2) point the way to applications in core-shell photovoltaics and tunnel field effect transistors.
authors.affiliation: Department of Physics, Simon Fraser University, Burnaby, BC V5A-1S6, Canada.
authors.forename: A
authors.initials: A
authors.lastname: Darbandi
authors.affiliation: Department of Physics, Simon Fraser University, Burnaby, BC V5A-1S6, Canada.
authors.forename: K L
authors.initials: KL
authors.lastname: Kavanagh
authors.affiliation: Department of Physics, Simon Fraser University, Burnaby, BC V5A-1S6, Canada.
authors.forename: S P
authors.initials: SP
authors.lastname: Watkins
keywords: GaAs; core−shell; metalorganic vapor phase epitaxy; nanowire; tunnel diodes