title: High-Mobility Sm-Doped Bi2 Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling.
abstract: High-mobility (Smx Bi1-x )2 Se3 topological insulators (with x = 0.05) show a Curie temperature of about 52 K, and the carrier concentration and Fermi wave vector can be manipulated by intentional Te introduction with no significant influence on the Curie temperature. The origin of the ferromagnetism is attributed to the trivalent Sm dopant, as confirmed by X-ray magnetic circular dichroism and first-principles calculations. The carrier concentration is on the order of 10(19) cm(-3) and the mobility can reach about 7200 cm(2) V(-1) s(-1) with pronounced Shubnikov-de Haas oscillations.
authors.affiliation: Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China.|Department of Physics, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Taishi
authors.initials: T
authors.lastname: Chen
authors.affiliation: Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China.|School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, P. R. China.|Department of Electronics, University of York, York, YO10 5DD, UK.
authors.forename: Wenqing
authors.initials: W
authors.lastname: Liu
authors.affiliation: Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng, 224051, P. R. China.
authors.forename: Fubao
authors.initials: F
authors.lastname: Zheng
authors.affiliation: Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China.|School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Ming
authors.initials: M
authors.lastname: Gao
authors.affiliation: Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China.|Department of Physics, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Xingchen
authors.initials: X
authors.lastname: Pan
authors.affiliation: Diamond Light Source, Didcot, OX11 0DE, UK.
authors.forename: Gerrit
authors.initials: G
authors.lastname: van der Laan
authors.affiliation: Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China.|School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Xuefeng
authors.initials: X
authors.lastname: Wang
authors.affiliation: Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng, 224051, P. R. China.
authors.forename: Qinfang
authors.initials: Q
authors.lastname: Zhang
authors.affiliation: Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China.|Department of Physics, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Fengqi
authors.initials: F
authors.lastname: Song
authors.affiliation: Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China.|Department of Physics, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Baigeng
authors.initials: B
authors.lastname: Wang
authors.affiliation: Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng, 224051, P. R. China.
authors.forename: Baolin
authors.initials: B
authors.lastname: Wang
authors.affiliation: Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China.|School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, P. R. China.|Department of Electronics, University of York, York, YO10 5DD, UK.
authors.forename: Yongbing
authors.initials: Y
authors.lastname: Xu
authors.affiliation: Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China.|Department of Physics, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Guanghou
authors.initials: G
authors.lastname: Wang
authors.affiliation: Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China.|School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Rong
authors.initials: R
authors.lastname: Zhang
keywords: X-ray magnetic circular dichroism (XMCD); dilute magnetic semiconductors; ferromagnetism; magnetic doping; topological insulators