title: Passive Q-switching with GaAs or Bi-doped GaAs saturable absorber in Tm:LuAG laser operating at 2μm wavelength.
abstract: We report the first demonstration of a diode pumped passively Q-switched Tm:LuAG laser near 2μm wavelength with Bi-doped or undoped GaAs wafer as saturable absorber. For Bi-doped GaAs saturable absorber, stable Q-switched pulses with duration of 63.3ns under a repetition rate of 132.7 kHz and pulse energy of 5.51μJ are generated. In comparison to the passively Q-switched laser with undoped GaAs saturable absorber, the laser with Bi-doped GaAs can produce shorter pulses and higher peak power at almost the same incident pump power. The results suggest that Bi-doped GaAs can be an attractive candidate of saturable absorber for Q-switched laser near 2μm wavelength.
authors.forename: Lin
authors.initials: L
authors.lastname: Wu
authors.forename: Dechun
authors.initials: D
authors.lastname: Li
authors.forename: Shengzhi
authors.initials: S
authors.lastname: Zhao
authors.forename: Kejian
authors.initials: K
authors.lastname: Yang
authors.forename: Xiangyang
authors.initials: X
authors.lastname: Li
authors.forename: Reng
authors.initials: R
authors.lastname: Wang
authors.forename: Ji
authors.initials: J
authors.lastname: Liu