title: Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics.
abstract: We report on the first terahertz (THz) emitter based on femtosecond-laser-ablated gallium arsenide (GaAs), demonstrating a 65% enhancement in THz emission at high optical power compared to the nonablated device. Counter-intuitively, the ablated device shows significantly lower photocurrent and carrier mobility. We understand this behavior in terms of n-doping, shorter carrier lifetime, and enhanced photoabsorption arising from the ablation process. Our results show that laser ablation allows for efficient and cost-effective optoelectronic THz devices via the manipulation of fundamental properties of materials.
authors.forename: Julien
authors.initials: J
authors.lastname: Madéo
authors.forename: Athanasios
authors.initials: A
authors.lastname: Margiolakis
authors.forename: Zhen-Yu
authors.initials: ZY
authors.lastname: Zhao
authors.forename: Peter J
authors.initials: PJ
authors.lastname: Hale
authors.forename: Michael K L
authors.initials: MK
authors.lastname: Man
authors.forename: Quan-Zhong
authors.initials: QZ
authors.lastname: Zhao
authors.forename: Wei
authors.initials: W
authors.lastname: Peng
authors.forename: Wang-Zhou
authors.initials: WZ
authors.lastname: Shi
authors.forename: Keshav M
authors.initials: KM
authors.lastname: Dani