title: Mechanically Durable and Highly Stretchable Transistors Employing Carbon Nanotube Semiconductor and Electrodes.
abstract: Mechanically durable stretchable trans-istors are fabricated using carbon nanotube electrical components and tough thermoplastic elastomers. After an initial conditioning step, the electrical characteristics remain constant with strain. The strain-dependent characteristics are similar in orthogonal stretching directions. Devices can be impacted with a hammer and punctured with a needle while remaining functional and stretchable.
authors.affiliation: Materials Science and Engineering Department, Stanford University, 496 Lomita Mall, Stanford, CA, 94305-4034, USA.
authors.forename: Alex
authors.initials: A
authors.lastname: Chortos
authors.affiliation: Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA.
authors.forename: Ghada I
authors.initials: GI
authors.lastname: Koleilat
authors.affiliation: Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA.
authors.forename: Raphael
authors.initials: R
authors.lastname: Pfattner
authors.affiliation: Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA.
authors.forename: Desheng
authors.initials: D
authors.lastname: Kong
authors.affiliation: Materials Physics and Chemistry, University of Science and Technology, Beijing, Haidian, Beijing, 100083, P. R. China.
authors.forename: Pei
authors.initials: P
authors.lastname: Lin
authors.affiliation: Electrical Engineering Department, Stanford University, 350 Serra Mall, Stanford, CA, 94305, USA.
authors.forename: Roda
authors.initials: R
authors.lastname: Nur
authors.affiliation: Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA.
authors.forename: Ting
authors.initials: T
authors.lastname: Lei
authors.affiliation: Materials Science and Engineering Department, Stanford University, 496 Lomita Mall, Stanford, CA, 94305-4034, USA.
authors.forename: Huiliang
authors.initials: H
authors.lastname: Wang
authors.affiliation: Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA.
authors.forename: Nan
authors.initials: N
authors.lastname: Liu
authors.affiliation: Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA.|Department of Physics, National Taiwan University, Taipei, 10617, Taiwan, P. R. China.
authors.forename: Ying-Chih
authors.initials: YC
authors.lastname: Lai
authors.affiliation: Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA.|Department of Chemistry, Chung-Ang University, 221 Heukseok-dong, Dongjak-gu, Seoul, 156-756, South Korea.
authors.forename: Myung-Gil
authors.initials: MG
authors.lastname: Kim
authors.affiliation: Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA.|Samsung Advanced Institute of Technology, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, South Korea.
authors.forename: Jong Won
authors.initials: JW
authors.lastname: Chung
authors.affiliation: Samsung Advanced Institute of Technology, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, South Korea.
authors.forename: Sangyoon
authors.initials: S
authors.lastname: Lee
authors.affiliation: Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA.
authors.forename: Zhenan
authors.initials: Z
authors.lastname: Bao
keywords: carbon nanotubes; stretchable electronics; stretchable transistor