title: Tunable Magnetism and Half-Metallicity in Hole-Doped Monolayer GaSe.
abstract: We find, through first-principles calculations, that hole doping induces a ferromagnetic phase transition in monolayer GaSe. Upon increasing hole density, the average spin magnetic moment per carrier increases and reaches a plateau near 1.0 μB per carrier in a range of 3×10(13)/cm(2)-1×10(14)/cm(2), with the system in a half-metal state before the moment starts to descend abruptly. The predicted itinerant magnetism originates from an exchange splitting of electronic states at the top of the valence band, where the density of states exhibits a sharp van Hove singularity in this quasi-two-dimensional system.
authors.affiliation: Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA and Material Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA.
authors.forename: Ting
authors.initials: T
authors.lastname: Cao
authors.affiliation: Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA and Material Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA.
authors.forename: Zhenglu
authors.initials: Z
authors.lastname: Li
authors.affiliation: Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA and Material Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA.
authors.forename: Steven G
authors.initials: SG
authors.lastname: Louie