title: Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si.
abstract: Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.
authors.affiliation: Department of Optics and Photonics, National Central University, Chung-Li, 320, Taiwan.
authors.forename: Jui-Wei
authors.initials: JW
authors.lastname: Hus
authors.affiliation: Department of Optics and Photonics, National Central University, Chung-Li, 320, Taiwan.
authors.forename: Chien-Chia
authors.initials: CC
authors.lastname: Chen
authors.affiliation: Department of Optics and Photonics, National Central University, Chung-Li, 320, Taiwan.
authors.forename: Ming-Jui
authors.initials: MJ
authors.lastname: Lee
authors.affiliation: Department of Electrical Engineering, National Central University, Chung-Li, 320, Taiwan.
authors.forename: Hsueh-Hsing
authors.initials: HH
authors.lastname: Liu
authors.affiliation: Department of Electrical Engineering, National Central University, Chung-Li, 320, Taiwan.
authors.forename: Jen-Inn
authors.initials: JI
authors.lastname: Chyi
authors.affiliation: Department of Materials Science and Engineering, National Cheng Kung University, Tainan, 701, Taiwan.
authors.forename: Michael R S
authors.initials: MR
authors.lastname: Huang
authors.affiliation: Department of Materials Science and Engineering, National Cheng Kung University, Tainan, 701, Taiwan.
authors.forename: Chuan-Pu
authors.initials: CP
authors.lastname: Liu
authors.affiliation: Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 106, Taiwan.
authors.forename: Tzu-Chiao
authors.initials: TC
authors.lastname: Wei
authors.affiliation: Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
authors.forename: Jr-Hau
authors.initials: JH
authors.lastname: He
authors.affiliation: Department of Optics and Photonics, National Central University, Chung-Li, 320, Taiwan.
authors.forename: Kun-Yu
authors.initials: KY
authors.lastname: Lai
mesh_terms: D055615:Electrical Equipment and Supplies; D005708:Gallium / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*
chemical_list: C473348:gallium nitride; D005708:Gallium; D012825:Silicon
keywords: GaN; Si substrate; nano-heteroepitaxy; quantum well; semipolar