title: Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory.
abstract: Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices.
authors.affiliation: Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
authors.forename: Minji
authors.initials: M
authors.lastname: Kang
authors.affiliation: Department of Physics, Blackett Laboratory, Imperial College London, London, SW7 2AZ, UK.
authors.forename: Dongyoon
authors.initials: D
authors.lastname: Khim
authors.affiliation: Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715, Republic of Korea.
authors.forename: Won-Tae
authors.initials: WT
authors.lastname: Park
authors.affiliation: Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
authors.forename: Jihong
authors.initials: J
authors.lastname: Kim
authors.affiliation: Department of Chemical Engineering and Materials Science, University of California, Irvine, Irvine, California 92697, United States.
authors.forename: Juhwan
authors.initials: J
authors.lastname: Kim
authors.affiliation: Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715, Republic of Korea.
authors.forename: Yong-Young
authors.initials: YY
authors.lastname: Noh
authors.affiliation: Nanocarbon Materials Research Group, Korea Electrotechnology Research Institute (KERI) 12 Bulmosan-ro 10Beon-gil, Seongsan-gu, Changwon, Gyeongsangnam-do 642-120, Republic of Korea.
authors.forename: Kang-Jun
authors.initials: KJ
authors.lastname: Baeg
authors.affiliation: Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
authors.forename: Dong-Yu
authors.initials: DY
authors.lastname: Kim