title: Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques.
abstract: High quality single crystalline zinc gallate (ZnGa2O4) nanowires (NWs) were grown using a combination of chemical vapor deposition and atomic layer deposition techniques. Morphological, structural and optical investigations revealed the formation of Ga2O3-ZnO core-shell NWs and their conversion into ZnGa2O4 NWs after annealing via a solid state reaction. This material conversion was systematically confirmed for single NWs by various measurement techniques including scanning and transmission electron microscopy, Raman spectroscopy and voltage-dependent cathodoluminescence. Moreover, a model system based on the obtained results has been provided explaining the formation mechanism of the ZnGa2O4 NWs.
authors.affiliation: Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi-110016, India.
authors.forename: Sudheer
authors.initials: S
authors.lastname: Kumar
authors.forename: G
authors.initials: G
authors.lastname: Sarau
authors.forename: C
authors.initials: C
authors.lastname: Tessarek
authors.forename: M
authors.initials: M
authors.lastname: Göbelt
authors.forename: S
authors.initials: S
authors.lastname: Christiansen
authors.forename: R
authors.initials: R
authors.lastname: Singh