title: Fluorescence Polarization Switching from a Single Silicon Vacancy Colour Centre in Diamond.
abstract: Single-photon emitters with stable and uniform photoluminescence properties are important for quantum technology. However, in many cases, colour centres in diamond exhibit spectral diffusion and photoluminescence intensity fluctuation. It is therefore essential to investigate the dynamics of colour centres at the single defect level in order to enable the on-demand manipulation and improved applications in quantum technology. Here we report the polarization switching, intensity jumps and spectral shifting observed on a negatively charged single silicon-vacancy colour centre in diamond. The observed phenomena elucidate the single emitter dynamics induced by photoionization of nearby electron donors in the diamond.
authors.affiliation: State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, P. R. China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, P. R. China.
authors.forename: Gengxu
authors.initials: G
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, P. R. China.
authors.forename: Youying
authors.initials: Y
authors.lastname: Rong
authors.affiliation: Institute for Quantum Optics, University Ulm, Albert-Einstein-Allee 11, 89081 Ulm, Germany.
authors.forename: Liam Paul
authors.initials: LP
authors.lastname: McGuinness
authors.affiliation: Institute for Quantum Optics, University Ulm, Albert-Einstein-Allee 11, 89081 Ulm, Germany.
authors.forename: Fedor
authors.initials: F
authors.lastname: Jelezko
authors.affiliation: School of Fundamental Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan.
authors.forename: Syuto
authors.initials: S
authors.lastname: Tamura
authors.affiliation: School of Fundamental Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Tanii
authors.affiliation: National Institute for Materials Science, 1-1 Namiki, 304-0044 Tsukuba, Japan.
authors.forename: Tokuyuki
authors.initials: T
authors.lastname: Teraji
authors.affiliation: Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan.
authors.forename: Shinobu
authors.initials: S
authors.lastname: Onoda
authors.affiliation: Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan.
authors.forename: Takeshi
authors.initials: T
authors.lastname: Ohshima
authors.affiliation: Research Centre for Knowledge Communities, University of Tsukuba, 1-2 Kasuga, Tsukuba, Ibaraki 305-8550, Japan.
authors.forename: Junichi
authors.initials: J
authors.lastname: Isoya
authors.affiliation: Centre for Innovative Integrated Electronic Systems (CIES), Tohoku University, 468-1 Aramaki Aza Aoba, Aoba-ku, Sendai, Miyagi, 980-0845, Japan.
authors.forename: Takahiro
authors.initials: T
authors.lastname: Shinada
authors.affiliation: State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, P. R. China.
authors.forename: E
authors.initials: E
authors.lastname: Wu
authors.affiliation: State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, P. R. China.
authors.forename: Heping
authors.initials: H
authors.lastname: Zeng