title: Large-Scale Precise Printing of Ultrathin Sol-Gel Oxide Dielectrics for Directly Patterned Solution-Processed Metal Oxide Transistor Arrays.
abstract: Ultrathin and dense metal oxide gate di-electric layers are reported by a simple printing of AlOx and HfOx sol-gel precursors. Large-area printed indium gallium zinc oxide (IGZO) thin-film transistor arrays, which exhibit mobilities >5 cm(2) V(-1) s(-1) and gate leakage current of 10(-9) A cm(-2) at a very low operation voltage of 2 V, are demonstrated by continuous simple bar-coated processes.
authors.affiliation: School of Materials Science and Engineering and Research Institute for Solar and Sustainable Energies, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju, 500-512, Republic of Korea.
authors.forename: Won-June
authors.initials: WJ
authors.lastname: Lee
authors.affiliation: Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul, 100-715, Republic of Korea.
authors.forename: Won-Tae
authors.initials: WT
authors.lastname: Park
authors.affiliation: School of Materials Science and Engineering and Research Institute for Solar and Sustainable Energies, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju, 500-512, Republic of Korea.
authors.forename: Sungjun
authors.initials: S
authors.lastname: Park
authors.affiliation: School of Materials Science and Engineering and Research Institute for Solar and Sustainable Energies, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju, 500-512, Republic of Korea.
authors.forename: Sujin
authors.initials: S
authors.lastname: Sung
authors.affiliation: Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul, 100-715, Republic of Korea.
authors.forename: Yong-Young
authors.initials: YY
authors.lastname: Noh
authors.affiliation: School of Materials Science and Engineering and Research Institute for Solar and Sustainable Energies, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju, 500-512, Republic of Korea.
authors.forename: Myung-Han
authors.initials: MH
authors.lastname: Yoon
keywords: bar coating; direct patterning; gate dielectrics; sol-gel metal oxides; thin-film transistors