title: Investigation of temperature-dependent photoluminescence in multi-quantum wells.
abstract: Photoluminescence (PL) is a nondestructive and powerful method to investigate carrier recombination and transport characteristics in semiconductor materials. In this study, the temperature dependences of photoluminescence of GaAs-AlxGa1-xAs multi-quantum wells samples with and without p-n junction were measured under both resonant and non-resonant excitation modes. An obvious increase of photoluminescence(PL) intensity as the rising of temperature in low temperature range (T < 50 K), is observed only for GaAs-AlxGa1-xAs quantum wells sample with p-n junction under non-resonant excitation. The origin of the anomalous increase of integrated PL intensity proved to be associated with the enhancement of carrier drifting because of the increase of carrier mobility in the temperature range from 15 K to 100 K. For non-resonant excitation, carriers supplied from the barriers will influence the temperature dependence of integrated PL intensity of quantum wells, which makes the traditional methods to acquire photoluminescence characters from the temperature dependence of integrated PL intensity unavailable. For resonant excitation, carriers are generated only in the wells and the temperature dependence of integrated PL intensity is very suitable to analysis the photoluminescence characters of quantum wells.
authors.affiliation: Key Laboratory for Renewable Energy, Chinese Academy of Sciences, China.
authors.forename: Yutao
authors.initials: Y
authors.lastname: Fang
authors.affiliation: Key Laboratory for Renewable Energy, Chinese Academy of Sciences, China.
authors.forename: Lu
authors.initials: L
authors.lastname: Wang
authors.affiliation: Key Laboratory for Renewable Energy, Chinese Academy of Sciences, China.
authors.forename: Qingling
authors.initials: Q
authors.lastname: Sun
authors.affiliation: Key Laboratory for Renewable Energy, Chinese Academy of Sciences, China.
authors.forename: Taiping
authors.initials: T
authors.lastname: Lu
authors.affiliation: Key Laboratory for Renewable Energy, Chinese Academy of Sciences, China.
authors.forename: Zhen
authors.initials: Z
authors.lastname: Deng
authors.affiliation: Key Laboratory for Renewable Energy, Chinese Academy of Sciences, China.
authors.forename: Ziguang
authors.initials: Z
authors.lastname: Ma
authors.affiliation: Key Laboratory for Renewable Energy, Chinese Academy of Sciences, China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Jiang
authors.affiliation: Key Laboratory for Renewable Energy, Chinese Academy of Sciences, China.
authors.forename: Haiqiang
authors.initials: H
authors.lastname: Jia
authors.affiliation: Key Laboratory for Renewable Energy, Chinese Academy of Sciences, China.
authors.forename: Wenxin
authors.initials: W
authors.lastname: Wang
authors.affiliation: Key Laboratory for Renewable Energy, Chinese Academy of Sciences, China.
authors.forename: Junming
authors.initials: J
authors.lastname: Zhou
authors.affiliation: Key Laboratory for Renewable Energy, Chinese Academy of Sciences, China.
authors.forename: Hong
authors.initials: H
authors.lastname: Chen
mesh_terms: D049449:Luminescence; D008163:Luminescent Measurements; D010825:Physics / Q000379:methods; D011789:Quantum Theory; D012666:Semiconductors; D013696:Temperature