title: NANOELECTRONICS. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface.
abstract: Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.
authors.affiliation: Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia. Research Center for Applied Sciences, Academia Sinica, Taipei 10617, Taiwan.
authors.forename: Ming-Yang
authors.initials: MY
authors.lastname: Li
authors.affiliation: Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Yumeng
authors.initials: Y
authors.lastname: Shi
authors.affiliation: Research Center for Applied Sciences, Academia Sinica, Taipei 10617, Taiwan. Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
authors.forename: Chia-Chin
authors.initials: CC
authors.lastname: Cheng
authors.affiliation: Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan.
authors.forename: Li-Syuan
authors.initials: LS
authors.lastname: Lu
authors.affiliation: National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan.
authors.forename: Yung-Chang
authors.initials: YC
authors.lastname: Lin
authors.affiliation: Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Hao-Lin
authors.initials: HL
authors.lastname: Tang
authors.affiliation: Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Meng-Lin
authors.initials: ML
authors.lastname: Tsai
authors.affiliation: Research Center for Applied Sciences, Academia Sinica, Taipei 10617, Taiwan.
authors.forename: Chih-Wei
authors.initials: CW
authors.lastname: Chu
authors.affiliation: Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
authors.forename: Kung-Hwa
authors.initials: KH
authors.lastname: Wei
authors.affiliation: Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Jr-Hau
authors.initials: JH
authors.lastname: He
authors.affiliation: Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan. Taiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology, Taiwan.
authors.forename: Wen-Hao
authors.initials: WH
authors.lastname: Chang
authors.affiliation: National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan.
authors.forename: Kazu
authors.initials: K
authors.lastname: Suenaga
authors.affiliation: Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia. lance.li@kaust.edu.sa.
authors.forename: Lain-Jong
authors.initials: LJ
authors.lastname: Li