title: Functional ferroelectric tunnel junctions on silicon.
abstract: The quest for solid state non-volatility memory devices on silicon with high storage density, high speed, low power consumption has attracted intense research on new materials and novel device architectures. Although flash memory dominates in the non-volatile memory market currently, it has drawbacks, such as low operation speed, and limited cycle endurance, which prevents it from becoming the "universal memory". In this report, we demonstrate ferroelectric tunnel junctions (Pt/BaTiO3/La0.67Sr0.33MnO3) epitaxially grown on silicon substrates. X-ray diffraction spectra and high resolution transmission electron microscope images prove the high epitaxial quality of the single crystal perovskite films grown on silicon. Furthermore, the write speed, data retention and fatigue properties of the device compare favorably with flash memories. The results prove that the silicon-based ferroelectric tunnel junction is a very promising candidate for application in future non-volatile memories.
authors.affiliation: 1] Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore [2] NUSNNI-Nanocore, National University of Singapore, 117411, Singapore.
authors.forename: Rui
authors.initials: R
authors.lastname: Guo
authors.affiliation: Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA.
authors.forename: Zhe
authors.initials: Z
authors.lastname: Wang
authors.affiliation: 1] NUSNNI-Nanocore, National University of Singapore, 117411, Singapore [2] Department of Physics, National University of Singapore, 117542, Singapore.
authors.forename: Shengwei
authors.initials: S
authors.lastname: Zeng
authors.affiliation: 1] NUSNNI-Nanocore, National University of Singapore, 117411, Singapore [2] Department of Physics, National University of Singapore, 117542, Singapore.
authors.forename: Kun
authors.initials: K
authors.lastname: Han
authors.affiliation: Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore.
authors.forename: Lisen
authors.initials: L
authors.lastname: Huang
authors.affiliation: 1] Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA [2] Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA.
authors.forename: Darrell G
authors.initials: DG
authors.lastname: Schlom
authors.affiliation: 1] NUSNNI-Nanocore, National University of Singapore, 117411, Singapore [2] Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA [3] Department of Physics, National University of Singapore, 117542, Singapore [4] Department of Electrical and Computer Science Engineering, National University of Singapore, 117576, Singapore [5] School for Integrative Sciences and Engineering, National University of Singapore, 117456, Singapore.
authors.forename: T
authors.initials: T
authors.lastname: Venkatesan
authors.affiliation: 1] NUSNNI-Nanocore, National University of Singapore, 117411, Singapore [2] Department of Physics, National University of Singapore, 117542, Singapore.
authors.lastname: Ariando
authors.affiliation: Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore.
authors.forename: Jingsheng
authors.initials: J
authors.lastname: Chen