title: Voltage and Dopant Concentration Measurements of Semiconductors using a Band-Pass Toroidal Energy Analyzer Inside a Scanning Electron Microscope.
abstract: This paper presents experimental results obtained from a scanning electron microscope (SEM) second-order focusing toroidal electron energy analyzer attachment. The results demonstrate that the analyzer can be used to obtain high signal-to-noise voltage and dopant concentration measurements on semiconductors in the presence of different electric field conditions at the sample. The experimentally calculated relative error of measurement typically varies from 31 to 63, corresponding to secondary electron (SE) signal mean shifts of 9-18 mV. The millivolt accuracy of these results is over one order of magnitude better than earlier quantitative dopant concentration measurements made by a retarding field analyzer.
authors.affiliation: Department of Electrical and Computer Engineering,Centre for Integrated Circuit Failure Analysis and Reliability (CICFAR),National University of Singapore,Singapore.
authors.forename: Avinash
authors.initials: A
authors.lastname: Srinivasan
authors.affiliation: Department of Electrical and Computer Engineering,Centre for Integrated Circuit Failure Analysis and Reliability (CICFAR),National University of Singapore,Singapore.
authors.forename: Anjam
authors.initials: A
authors.lastname: Khursheed
keywords: dopant concentration; energy filtered SE signals; surface microfields; toroidal energy analyzer; voltage measurement