title: Atomic Level Distributed Strain within Graphene Divacancies from Bond Rotations.
abstract: Vacancy defects play an important role in influencing the properties of graphene, and understanding their detailed atomic structure is crucial for developing accurate models to predict their impact. Divacancies (DVs) are one of the most common defects in graphene and can take three different structural forms through various sequences of bond rotations to minimize the energy. Using aberration-corrected transmission electron microscopy with monochromation of the electron source, we resolve the position of C atoms in graphene and measure the C-C bond lengths within the three DVs, enabling a map of bond strain to be generated. We show that bond rotations reduce the maximum single bond strain reached within a DV and help distribute the strain over a larger number of bonds to minimize the peak magnitude.
authors.affiliation: Department of Materials, University of Oxford , Parks Road, Oxford OX1 3PH, United Kingdom.
authors.forename: Qu
authors.initials: Q
authors.lastname: Chen
authors.affiliation: Department of Materials, University of Oxford , Parks Road, Oxford OX1 3PH, United Kingdom.
authors.forename: Alex W
authors.initials: AW
authors.lastname: Robertson
authors.affiliation: Department of Materials, University of Oxford , Parks Road, Oxford OX1 3PH, United Kingdom.
authors.forename: Kuang
authors.initials: K
authors.lastname: He
authors.affiliation: Department of Materials, University of Oxford , Parks Road, Oxford OX1 3PH, United Kingdom.
authors.forename: Chuncheng
authors.initials: C
authors.lastname: Gong
authors.affiliation: Department of Materials Science and Engineering, Seoul National University , Seoul 151-742, Korea.
authors.forename: Euijoon
authors.initials: E
authors.lastname: Yoon
authors.affiliation: Department of Materials Science and Engineering, Seoul National University , Seoul 151-742, Korea.
authors.forename: Gun-Do
authors.initials: GD
authors.lastname: Lee
authors.affiliation: Department of Materials, University of Oxford , Parks Road, Oxford OX1 3PH, United Kingdom.
authors.forename: Jamie H
authors.initials: JH
authors.lastname: Warner
keywords: DFT; TEM; aberration correction; defects; divacancy; graphene