title: Rogue waves lead to the instability in GaN semiconductors.
abstract: A new approach to understand the electron/hole interfaced plasma in GaN high electron mobility transistors (HEMTs). A quantum hydrodynamic model is constructed to include electrons/holes degenerate pressure, Bohm potential, and the exchange/correlation effect and then reduced to the nonlinear Schrödinger equation (NLSE). Numerical analysis of the latter predicts the rough (in)stability domains, which allow for the rogue waves to occur. Our results might give physical solution rather than the engineering one to the intrinsic problems in these high frequency/power transistors.
authors.affiliation: 1] Faculty of Engineering and Natural Sciences, International University of Sarajevo (IUS), 71210, Ilidža, Sarajevo, Bosnia and Herzegovina [2] Center for Theoretical Physics, The British University in Egypt (BUE), El-Shorouk City, Cairo 11837, Egypt.
authors.forename: M E
authors.initials: ME
authors.lastname: Yahia
authors.affiliation: Department of Mathematics, Faculty of Science, Damietta University, New Damietta, 34517, Egypt.
authors.forename: R E
authors.initials: RE
authors.lastname: Tolba
authors.affiliation: Department of Mathematics, Faculty of Science, Damietta University, New Damietta, 34517, Egypt.
authors.forename: N A
authors.initials: NA
authors.lastname: El-Bedwehy
authors.affiliation: Department of Physics, Faculty of Science, Damietta University, New Damietta 34517, Egypt.
authors.forename: S K
authors.initials: SK
authors.lastname: El-Labany
authors.affiliation: 1] Center for Theoretical Physics, The British University in Egypt (BUE), El-Shorouk City, Cairo 11837, Egypt [2] Department of Physics, Faculty of Science, Port Said University, Port Said 42521, Egypt.
authors.forename: W M
authors.initials: WM
authors.lastname: Moslem