title: Semiconducting Graphene on Silicon from First-Principles Calculations.
abstract: Graphene is a semimetal with zero band gap, which makes it impossible to turn electric conduction off below a certain limit. Transformation of graphene into a semiconductor has attracted wide attention. Owing to compatibility with Si technology, graphene adsorbed on a Si substrate is particularly attractive for future applications. However, to date there is little theoretical work on band gap engineering in graphene and its integration with Si technology. Employing first-principles calculations, we study the electronic properties of monolayer and bilayer graphene adsorbed on clean and hydrogen (H)-passivated Si (111)/Si (100) surfaces. Our calculation shows that the interaction between monolayer graphene and a H-passivated Si surface is weak, with the band gap remaining negligible. For bilayer graphene adsorbed onto a H-passivated Si surface, the band gap opens up to 108 meV owing to asymmetry introduction. In contrast, the interaction between graphene and a clean Si surface is strong, leading to formation of chemical bonds and a large band gap of 272 meV. Our results provide guidance for device designs based on integrating graphene with Si technology.
authors.affiliation: Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China.
authors.forename: Xuejie
authors.initials: X
authors.lastname: Dang
authors.affiliation: Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China.
authors.forename: Huilong
authors.initials: H
authors.lastname: Dong
authors.affiliation: Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China.
authors.forename: Lu
authors.initials: L
authors.lastname: Wang
authors.affiliation: Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China.
authors.forename: Yanfei
authors.initials: Y
authors.lastname: Zhao
authors.affiliation: Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China.
authors.forename: Zhenyu
authors.initials: Z
authors.lastname: Guo
authors.affiliation: Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China.
authors.forename: Tingjun
authors.initials: T
authors.lastname: Hou
authors.affiliation: Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China.
authors.forename: Youyong
authors.initials: Y
authors.lastname: Li
authors.affiliation: Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China.
authors.forename: Shuit-Tong
authors.initials: ST
authors.lastname: Lee
keywords: band gap; graphene; graphene−Si interaction; silicon