title: Bias assisted scanning probe microscopy direct write lithography enables local oxygen enrichment of lanthanum cuprates thin films.
abstract: Scanning probe bias techniques have been used as a method to locally dope thin epitaxial films of La(2)CuO(4) (LCO) fabricated by pulsed laser deposition. The local electrochemical oxidation of LCO very efficiently introduces interstitial oxygen defects in the thin film. Details on the influence of the tip voltage bias and environmental conditions on the surface morphology have been investigated. The results show that a local uptake of oxygen occurs in the oxidized films.
authors.affiliation: National Research Council CNR-SPIN, University of Roma 'Tor Vergata', Rome I-00133, Italy. NAST Center, University of Roma 'Tor Vergata', Rome I-00133, Italy.
authors.forename: Francesco
authors.initials: F
authors.lastname: Lavini
authors.forename: Nan
authors.initials: N
authors.lastname: Yang
authors.forename: Rama K
authors.initials: RK
authors.lastname: Vasudevan
authors.forename: E
authors.initials: E
authors.lastname: Strelcov
authors.forename: S
authors.initials: S
authors.lastname: Jesse
authors.forename: M B
authors.initials: MB
authors.lastname: Okatan
authors.forename: I
authors.initials: I
authors.lastname: Kravchenko
authors.forename: Daniele
authors.initials: D
authors.lastname: Di Castro
authors.forename: Sergei V
authors.initials: SV
authors.lastname: Kalinin
authors.forename: Giuseppe
authors.initials: G
authors.lastname: Balestrino
authors.forename: Carmela
authors.initials: C
authors.lastname: Aruta
authors.forename: Vittorio
authors.initials: V
authors.lastname: Foglietti