title: Piezotronic Effect in Polarity-Controlled GaN Nanowires.
abstract: Using high-quality and polarity-controlled GaN nanowires (NWs), we studied the piezotronic effect in crystal orientation defined wurtzite structures. By applying a normal compressive force on c-plane GaN NWs with an atomic force microscopy tip, the Schottky barrier between the Pt tip and GaN can be effectively tuned by the piezotronic effect. In contrast, the normal compressive force cannot change the electron transport characteristics in m-plane GaN NWs whose piezoelectric polarization axis is turned in the transverse direction. This observation provided solid evidence for clarifying the difference between the piezotronic effect and the piezoresistive effect. We further demonstrated a high sensitivity of the m-plane GaN piezotronic transistor to collect the transverse force. The integration of c-plane GaN and m-plane GaN indicates an overall response to an external force in any direction.
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Science , Beijing 100083, China.
authors.forename: Zhenfu
authors.initials: Z
authors.lastname: Zhao
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Science , Beijing 100083, China.
authors.forename: Xiong
authors.initials: X
authors.lastname: Pu
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Science , Beijing 100083, China.
authors.forename: Changbao
authors.initials: C
authors.lastname: Han
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Science , Beijing 100083, China.
authors.forename: Chunhua
authors.initials: C
authors.lastname: Du
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Science , Beijing 100083, China.
authors.forename: Linxuan
authors.initials: L
authors.lastname: Li
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Science , Beijing 100083, China.
authors.forename: Chunyan
authors.initials: C
authors.lastname: Jiang
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Science , Beijing 100083, China.
authors.forename: Weiguo
authors.initials: W
authors.lastname: Hu
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Science , Beijing 100083, China.|School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0245, United States.
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang
keywords: GaN; piezotronic effect; polarity