title: Enhanced ultraviolet-visible light responses of phototransistors based on single and a few ZrS₃ nanobelts.
abstract: Phototransistors based on single and three ZrS3 nanobelts were fabricated on SiO2/Si wafers by photolithography and the lift-off technique, respectively, and their light-induced electric properties were investigated in detail. Both the devices demonstrate a remarkable photoresponse from ultraviolet to near infrared light. The photoswitch current ratio (PCR) of the single-nanobelt phototransistor is 13 under the illumination of 405 nm light with an optical power of 10.5 mW cm(-2) at a bias of 5 V, while the PCR of the three-nanobelt device is 210 under the illumination of 405 nm light with an optical power of 5.57 mW cm(-2) at a bias of 1 V. On comparison of the photoresponses under the same conditions, the latter is found to be superior to the former, and both the devices show a much better photoresponse than the reported flexible ZrS3-nanobelt-film photodetector.
authors.affiliation: School of Chemistry and Chemical Engineering, Key Laboratory of Mesoscopic Chemistry of MOE, Nanjing University, Nanjing, 210093, P. R. China. wuxingca@nju.edu.cn.
authors.forename: You-Rong
authors.initials: YR
authors.lastname: Tao
authors.forename: Jia-Jing
authors.initials: JJ
authors.lastname: Wu
authors.forename: Xing-Cai
authors.initials: XC
authors.lastname: Wu