title: Quantum Hall conductance of graphene  combined with charge-trap memory  operation.
abstract: The combination of quantum Hall conductance and charge-trap memory operation was qualitatively examined using a graphene field-effect transistor. The characteristics of two terminal quantum Hall conductance appeared clearly on the background of a huge conductance hysteresis during a gate-voltage sweep for a device using monolayer graphene as a channel,hexagonal boron-nitride flakes as a tunneling dielectric and defective silicon oxide as the charge storage node. Even though there was a giant shift of the charge neutrality point, the deviation of quantized resistance value at the state of filling factor 2 was less than 1.6% from half of the von Klitzing constant. At high Landau level indices, the behaviors of quantum conductance oscillation between the increasing and the decreasing electron densities were identical in spite ofa huge memory window exceeding 100 V. Our results indicate that the two physical phenomena, two-terminal quantum Hall conductance and charge-trap memory operation, can be integrated into one device without affecting each other.
authors.forename: Haeyong
authors.initials: H
authors.lastname: Kang
authors.forename: Yoojoo
authors.initials: Y
authors.lastname: Yun
authors.forename: Jeongmin
authors.initials: J
authors.lastname: Park
authors.forename: Joonggyu
authors.initials: J
authors.lastname: Kim
authors.forename: Thuy Kieu
authors.initials: TK
authors.lastname: Truong
authors.forename: Jeong-Gyun
authors.initials: JG
authors.lastname: Kim
authors.forename: Nahee
authors.initials: N
authors.lastname: Park
authors.forename: Hoyeol
authors.initials: H
authors.lastname: Yun
authors.forename: Sang Wook
authors.initials: SW
authors.lastname: Lee
authors.forename: Young Hee
authors.initials: YH
authors.lastname: Lee
authors.forename: Dongseok
authors.initials: D
authors.lastname: Suh