title: High-Performance Monolayer WS2 Field-Effect Transistors on High-κ Dielectrics.
abstract: The combination of high-quality Al2 O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm(2) V(-1) s(-1) (337 cm(2) V(-1) s(-1) ) is reached at room temperature (low temperature) for monolayer WS2 . A theoretical model for electron transport is also developed.
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Cui
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Run
authors.initials: R
authors.lastname: Xin
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Zhihao
authors.initials: Z
authors.lastname: Yu
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Yiming
authors.initials: Y
authors.lastname: Pan
authors.affiliation: Institute of High Performance Computing, 1 Fusionopolis Way, 138632, Singapore.
authors.forename: Zhun-Yong
authors.initials: ZY
authors.lastname: Ong
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Xiaoxu
authors.initials: X
authors.lastname: Wei
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Junzhuan
authors.initials: J
authors.lastname: Wang
authors.affiliation: Department of Physics, Southeast University, Nanjing, 211189, China.
authors.forename: Haiyan
authors.initials: H
authors.lastname: Nan
authors.affiliation: Department of Physics, Southeast University, Nanjing, 211189, China.
authors.forename: Zhenhua
authors.initials: Z
authors.lastname: Ni
authors.affiliation: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute, Nanjing, 210017, China.
authors.forename: Yun
authors.initials: Y
authors.lastname: Wu
authors.affiliation: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute, Nanjing, 210017, China.
authors.forename: Tangsheng
authors.initials: T
authors.lastname: Chen
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Yi
authors.initials: Y
authors.lastname: Shi
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Baigeng
authors.initials: B
authors.lastname: Wang
authors.affiliation: Institute of High Performance Computing, 1 Fusionopolis Way, 138632, Singapore.
authors.forename: Gang
authors.initials: G
authors.lastname: Zhang
authors.affiliation: Institute of High Performance Computing, 1 Fusionopolis Way, 138632, Singapore.
authors.forename: Yong-Wei
authors.initials: YW
authors.lastname: Zhang
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Xinran
authors.initials: X
authors.lastname: Wang
keywords: interfaces; mobility; transition metal dichalcogenides; tungsten disulfide (WS2)