title: Electronic and Chemical Properties of Donor, Acceptor Centers in Graphene.
abstract: Chemical doping is one of the most suitable ways of tuning the electronic properties of graphene and a promising candidate for a band gap opening. In this work we report a reliable and tunable method for preparation of high-quality boron and nitrogen co-doped graphene on silicon carbide substrate. We combine experimental (dAFM, STM, XPS, NEXAFS) and theoretical (total energy DFT and simulated STM) studies to analyze the structural, chemical, and electronic properties of the single-atom substitutional dopants in graphene. We show that chemical identification of boron and nitrogen substitutional defects can be achieved in the STM channel due to the quantum interference effect, arising due to the specific electronic structure of nitrogen dopant sites. Chemical reactivity of single boron and nitrogen dopants is analyzed using force-distance spectroscopy by means of dAFM.
authors.affiliation: Institute of Physics, Academy of Sciences of the Czech Republic , Cukrovarnická 10, CZ 16200, Prague, Czech Republic.|Faculty of Mathematics and Physics, Charles University , V Holešovičkách 2, Praha 8, Czech Republic.
authors.forename: Mykola
authors.initials: M
authors.lastname: Telychko
authors.affiliation: Institute of Physics, Academy of Sciences of the Czech Republic , Cukrovarnická 10, CZ 16200, Prague, Czech Republic.
authors.forename: Pingo
authors.initials: P
authors.lastname: Mutombo
authors.affiliation: Max Planck Institute for Solid State Research , Heisenberg Strasse 1, 70569 Stuttgart, Germany.
authors.forename: Pablo
authors.initials: P
authors.lastname: Merino
authors.affiliation: Institute of Physics, Academy of Sciences of the Czech Republic , Cukrovarnická 10, CZ 16200, Prague, Czech Republic.
authors.forename: Prokop
authors.initials: P
authors.lastname: Hapala
authors.affiliation: Institute of Physics, Academy of Sciences of the Czech Republic , Cukrovarnická 10, CZ 16200, Prague, Czech Republic.
authors.forename: Martin
authors.initials: M
authors.lastname: Ondráček
authors.affiliation: Peter Grünberg Institut (PGI-3) , Forschungszentrum Jülich, 52425 Jülich, Germany.|Jülich-Aachen Research Alliance (JARA) ; Fundamentals of Future Information Technology, 52425 Jülich, Germany.
authors.forename: François C
authors.initials: FC
authors.lastname: Bocquet
authors.affiliation: Peter Grünberg Institut (PGI-3) , Forschungszentrum Jülich, 52425 Jülich, Germany.|Jülich-Aachen Research Alliance (JARA) ; Fundamentals of Future Information Technology, 52425 Jülich, Germany.
authors.forename: Jessica
authors.initials: J
authors.lastname: Sforzini
authors.affiliation: Institute of Physics, Academy of Sciences of the Czech Republic , Cukrovarnická 10, CZ 16200, Prague, Czech Republic.
authors.forename: Oleksandr
authors.initials: O
authors.lastname: Stetsovych
authors.affiliation: Institute of Physics, Academy of Sciences of the Czech Republic , Na Slovance 2, 10, CZ 18228, Prague, Czech Republic.
authors.forename: Martin
authors.initials: M
authors.lastname: Vondráček
authors.affiliation: Institute of Physics, Academy of Sciences of the Czech Republic , Cukrovarnická 10, CZ 16200, Prague, Czech Republic.
authors.forename: Pavel
authors.initials: P
authors.lastname: Jelínek
authors.affiliation: Institute of Physics, Academy of Sciences of the Czech Republic , Cukrovarnická 10, CZ 16200, Prague, Czech Republic.
authors.forename: Martin
authors.initials: M
authors.lastname: Švec
keywords: boron; chemical reactivity; doping; graphene; nitrogen