title: Temperature-Dependent Three-Dimensional Anisotropy of the Magnetoresistance in WTe_{2}.
abstract: Extremely large magnetoresistance (XMR) was recently discovered in WTe_{2}, triggering extensive research on this material regarding the XMR origin. Since WTe_{2} is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe_{2}: (1) WTe_{2} is electronically 3D with a mass anisotropy as low as 2, as revealed by the 3D scaling behavior of the resistance R(H,θ)=R(ϵ_{θ}H) with ϵ_{θ}=(cos^{2}θ+γ^{-2}sin^{2}θ)^{1/2}, θ being the magnetic field angle with respect to the c axis of the crystal and γ being the mass anisotropy and (2) the mass anisotropy γ varies with temperature and follows the magnetoresistance behavior of the Fermi liquid state. Our results not only provide a general scaling approach for the anisotropic magnetoresistance but also are crucial for correctly understanding the electronic properties of WTe_{2}, including the origin of the remarkable "turn-on" behavior in the resistance versus temperature curve, which has been widely observed in many materials and assumed to be a metal-insulator transition.
authors.affiliation: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.|Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA.
authors.forename: L R
authors.initials: LR
authors.lastname: Thoutam
authors.affiliation: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: Y L
authors.initials: YL
authors.lastname: Wang
authors.affiliation: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.|Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA.
authors.forename: Z L
authors.initials: ZL
authors.lastname: Xiao
authors.affiliation: Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: S
authors.initials: S
authors.lastname: Das
authors.affiliation: Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: A
authors.initials: A
authors.lastname: Luican-Mayer
authors.affiliation: Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: R
authors.initials: R
authors.lastname: Divan
authors.affiliation: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.|Departments of Physics, Electrical and Mechanical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, USA.
authors.forename: G W
authors.initials: GW
authors.lastname: Crabtree
authors.affiliation: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: W K
authors.initials: WK
authors.lastname: Kwok