title: Structural defect-dependent resistive  switching in Cu-O/Si studied by Kelvin probe  force microscopy and conductive atomic  force microscopy.
abstract: In this study, we show structural defect-dependent presence or absence of resistive switching in Cu-O films. We use Kelvin probe force microscopy and conductive atomic force microscopy to show the presence of resistive switching. In addition, local current mapping provides direct evidence on the formation of nanoscale filament. These findings match well with the existing theoretical model on resistive switching. In particular, understanding the role of structural defects in resistive switching can be considered as critically important to take a step forward for designing advanced nanoscale memory devices.
authors.forename: Mohit
authors.initials: M
authors.lastname: Kumar
authors.forename: Tapobrata
authors.initials: T
authors.lastname: Som