title: Electric field modification of magnetism in Au/La2/3Ba1/3MnO3/Pt device.
abstract: The La2/3Ba1/3MnO3 film is deposited in a CMOS-compatible Pt/Ti/SiO2/Si substrate with the oxygen pressure of 10 Pa for investigating magnetoelectric effect. Bipolar resistive switching effect with excellent endurance and retention is observed in this Au/La2/3Ba1/3MnO3/Pt device. Through this effect, a significant nonvolatile change of magnetization is obtained in this device as well. The change of magnetization can be understood by the break and repair of the -Mn(3+)-O(2-)-Mn(4+)- chains induced by the electric field through the oxygen vacancies migration. The resistance and magnetization of the Au/La2/3Ba1/3MnO3/Pt device can be simultaneously manipulated by the electric field, which makes it to be a promising candidate for the multifunctional memory devices.
authors.affiliation: 1] Jiangsu Key Laboratory for Nano Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China.
authors.forename: Y Q
authors.initials: YQ
authors.lastname: Xiong
authors.affiliation: 1] Jiangsu Key Laboratory for Nano Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China.
authors.forename: W P
authors.initials: WP
authors.lastname: Zhou
authors.affiliation: 1] Jiangsu Key Laboratory for Nano Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China.
authors.forename: Q
authors.initials: Q
authors.lastname: Li
authors.affiliation: 1] Jiangsu Key Laboratory for Nano Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China.
authors.forename: Q Q
authors.initials: QQ
authors.lastname: Cao
authors.affiliation: Jiangsu Key Laboratory for Nano Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China.
authors.forename: T
authors.initials: T
authors.lastname: Tang
authors.affiliation: 1] Jiangsu Key Laboratory for Nano Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China.
authors.forename: D H
authors.initials: DH
authors.lastname: Wang
authors.affiliation: 1] Jiangsu Key Laboratory for Nano Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China.
authors.forename: Y W
authors.initials: YW
authors.lastname: Du