title: Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS₂ thin film.
abstract: Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS2 thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS2 layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n-Si solar cell.
authors.affiliation: Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan. matsuda@iae.kyoto-u.ac.jp.
authors.forename: Yuka
authors.initials: Y
authors.lastname: Tsuboi
authors.forename: Feijiu
authors.initials: F
authors.lastname: Wang
authors.forename: Daichi
authors.initials: D
authors.lastname: Kozawa
authors.forename: Kazuma
authors.initials: K
authors.lastname: Funahashi
authors.forename: Shinichiro
authors.initials: S
authors.lastname: Mouri
authors.forename: Yuhei
authors.initials: Y
authors.lastname: Miyauchi
authors.forename: Taishi
authors.initials: T
authors.lastname: Takenobu
authors.forename: Kazunari
authors.initials: K
authors.lastname: Matsuda