Time-Resolved In Situ Spectroscopy During Formation of the GaP/Si(100) Heterointerface.
Though III-V/Si(100) heterointerfaces are essential for future epitaxial high-performance devices, their atomic structure is an open historical question. Benchmarking of transient optical in situ spectroscopy during chemical vapor deposition to chemical analysis by X-ray photoelectron spectroscopy enables us to distinguish between formation of surfaces and of the heterointerface. A terrace-related optical anisotropy signal evolves during pulsed GaP nucleation on single-domain Si(100) surfaces. This dielectric anisotropy agrees well with the one calculated for buried GaP/Si(100) interfaces from differently thick GaP epilayers. X-ray photoelectron spectroscopy reveals a chemically shifted contribution of the P and Si emission lines, which quantitatively corresponds to one monolayer and establishes simultaneously with the nucleation-related optical in situ signal. We attribute that contribution to the existence of Si-P bonds at the buried heterointerface. During further pulsing and annealing in phosphorus ambient, dielectric anisotropies known from atomically well-ordered GaP(100) surfaces superimpose the nucleation-related optical in situ spectra.
†Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau, Germany.|‡Helmholtz-Zentrum Berlin, Institute for Solar Fuels, 14109 Berlin, Germany.|§Humboldt-Universität zu Berlin, Institut für Physik, 10099 Berlin, Germany.
Oliver
O
Supplie
†Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau, Germany.|‡Helmholtz-Zentrum Berlin, Institute for Solar Fuels, 14109 Berlin, Germany.|§Humboldt-Universität zu Berlin, Institut für Physik, 10099 Berlin, Germany.
Matthias M
MM
May
∥Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany.
Gabi
G
Steinbach
⊥Institute of Physics, Academy of Sciences of the Czech Republic, 162 00 Prague, Czech Republic.
Oleksandr
O
Romanyuk
¶Paul-Drude Institut für Festkörperelektronik, 10117 Berlin, Germany.
Frank
F
Grosse
†Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau, Germany.
Andreas
A
Nägelein
†Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau, Germany.
Peter
P
Kleinschmidt
†Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau, Germany.|‡Helmholtz-Zentrum Berlin, Institute for Solar Fuels, 14109 Berlin, Germany.
Sebastian
S
Brückner
†Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau, Germany.|‡Helmholtz-Zentrum Berlin, Institute for Solar Fuels, 14109 Berlin, Germany.
Thomas
T
Hannappel
Heterointerfaces; III−V on Silicon; MOCVD; optical in situ spectroscopy; photoelectron spectroscopy