Determination of recombination coefficients for nanocrystalline silicon embedded in hydrogenated amorphous silicon.
The spectroscopic pump-probe reflectance method was used to investigate recombination dynamics in samples of nanocrystalline silicon embedded in a matrix of hydrogenated amorphous silicon. We found that the dynamics can be described by a rate equation including linear and quadratic terms corresponding to recombination processes associated with impurities and impurity-assisted Auger ionization, respectively. We determined the values of the recombination coefficients using the initial concentrations method. We report the coefficients of 1.5×10(11) s(-1) and 1.1×10(-10) cm(3) s(-1) for the impurity-assisted recombination and Auger ionization, respectively.
Wei
W
He
Ammar
A
Zakar
Thomas
T
Roger
Igor V
IV
Yurkevich
Andre
A
Kaplan