Terahertz detectors arrays based on orderly aligned InN nanowires.
Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a "transfer-printing" method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series.
State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-Sen University, Guangdong Guangzhou 510275, China.|School of Mobile Information Engineering, Sun Yat-Sen University, Guangdong Guangzhou 510275, China.
Xuechen
X
Chen
State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Sichuan Mianyang 621010, China.
Huiqiang
H
Liu
State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-Sen University, Guangdong Guangzhou 510275, China.
Qiuguo
Q
Li
State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-Sen University, Guangdong Guangzhou 510275, China.
Hao
H
Chen
State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Sichuan Mianyang 621010, China.
Rufang
R
Peng
State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-Sen University, Guangdong Guangzhou 510275, China.
Sheng
S
Chu
Institute of Electrical Engineering, Chinese Academy of Engineering Physics, Mianyang 621423, China.
Binbin
B
Cheng