Fabrication of Straight Silicon Nanowires and Their Conductive Properties.
Straight Si nanowires (Si NWs) with tens to hundreds of micrometers in length and 40-200 nm in diameter are achieved by annealing a Si substrate coated with metallic Fe. The influences of annealing gas and temperature on the formation of Si NWs are investigated. It is found that the annealing gas has significant impacts on the microstructure of the NWs. By increasing the hydrogen ratio in the forming gas, straight and crystal Si NWs with thin oxide shells are obtained. Both the conductive properties along and perpendicular to the NW are investigated by conductive atomic force microscopy (CAFM) on single NWs. The conductance perpendicular to the NW is too poor to be detected, while a weak conductance can be measured along the NW. The results indicate that the measured resistance mainly comes from the contact(s), and the Si NWs exhibit typical semiconductive conductance themselves, which should have potential applications in nanoelectronics.
State Key Laboratory of Surface Physics and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai, 200433, China.
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S
Wu
Y M
YM
Shao
T X
TX
Nie
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L
Xu
Z M
ZM
Jiang
X J
XJ
Yang