Controlled MoS₂ layer etching using CF₄ plasma.
A few-layered molybdenum disulfide (MoS2) thin film grown by plasma enhanced chemical vapor deposition was etched using a CF4 inductively coupled plasma, and the possibility of controlling the MoS2 layer thickness to a monolayer of MoS2 over a large area substrate was investigated. In addition, damage and contamination of the remaining MoS2 layer surface after etching and a possible method for film recovery was also investigated. The results from Raman spectroscopy and atomic force microscopy showed that one monolayer of MoS2 was etched by exposure to a CF4 plasma for 20 s after an initial incubation time of 20 s, i.e., the number of MoS2 layers could be controlled by exposure to the CF4 plasma for a certain processing time. However, XPS data showed that exposure to CF4 plasma induced a certain amount of damage and contamination by fluorine of the remaining MoS2 surface. After exposure to a H2S plasma for more than 10 min, the damage and fluorine contamination of the etched MoS2 surface could be effectively removed.
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Soebu-ro, Jangan-gu, Suwon, Gyeong gi-do, 440-746, Korea.
Min Hwan
MH
Jeon
Chisung
C
Ahn
HyeongU
H
Kim
Kyong Nam
KN
Kim
Tai Zhe
TZ
LiN
Hongyi
H
Qin
Yeongseok
Y
Kim
Sehan
S
Lee
Taesung
T
Kim
Geun Young
GY
Yeom