Theoretical Prediction of Carrier Mobility in Few-Layer BC2N.
An ideal semiconducting material should simultaneously hold a considerable direct band gap and a high carrier mobility. A 2D planar compound consisting of zigzag chains of C-C and B-N atoms, denoted as BC2N, would be a good candidate. It has a direct band gap of 2 eV, which can be further tuned by changing the layer number. At the same time, our first-principles calculations show that few-layer BC2N possesses a high carrier mobility. The carrier mobility of around one million sqaure centimeters per volt-second is obtained at its three-layer. As our study demonstrated, few-layer BC2N has potential applications in nanoelectronics and optoelectronics.
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, No. 222 South Tianshui Road, Lanzhou, Gansu 730000, China.
Jiafeng
J
Xie
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, No. 222 South Tianshui Road, Lanzhou, Gansu 730000, China.
Z Y
ZY
Zhang
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, No. 222 South Tianshui Road, Lanzhou, Gansu 730000, China.
D Z
DZ
Yang
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, No. 222 South Tianshui Road, Lanzhou, Gansu 730000, China.
D S
DS
Xue
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, No. 222 South Tianshui Road, Lanzhou, Gansu 730000, China.
M S
MS
Si
device application; direct bandgap semiconductor; few-layer BC2N; first-principles; high carrier mobility