Method to evaluate afterpulsing probability in single-photon avalanche diodes.
We propose and demonstrate a new method for evaluating the afterpulsing effect in single-photon avalanche photodiodes (SPADs). By analyzing the statistical property of dark count rate, we can quantitatively characterize afterpulsing probability (APP) of a SPAD. In experiment, the temperature-dependent low dark count rate (DCR) distribution becomes non-Poissonian at lower temperature and has higher excess bias as the afterpulsing effect becomes significant. Our work provides a flexible way to examine APP in either single-device or circuit level.
Bo-Wei
BW
Tzou
Jau-Yang
JY
Wu
Yi-Shan
YS
Lee
Sheng-Di
SD
Lin