Heteroepitaxial Junction in Au-ZnSe Nanostructure: Experiment versus First-Principle Simulation.
Composing together the experimental as well as the simulated results, we demonstrate here the atomic placements and the electronic structure at the epitaxial junction of a solution-processed heteronanostructure Au-ZnSe. Despite the large lattice mismatch (∼32%) between fcc Au and zinc-blende structured ZnSe, the heterostructures are formed via coincidence site epitaxy, which appears periodically because of the arrangements of their proper unit cell placements at the junction. This reduces the interface energy and drives the formation of such heteronanostructures. Details of the physical processes involved in the formation of these nanostructures have been discussed in this letter, and epitaxy at the heterojunction is strongly supported by HRTEM measurement and DFT calculation. This material has the possibility of plasmon-exciton coupling and therefore might be a futuristic material for utilizations in catalysis, nanoelectronics, and other related applications.
†Department of Materials Science, ‡Centre for Advanced Materials, Indian Association for the Cultivation of Science, Kolkata 700032, India.
Riya
R
Bose
†Department of Materials Science, ‡Centre for Advanced Materials, Indian Association for the Cultivation of Science, Kolkata 700032, India.
A H M Abdul
AH
Wasey
†Department of Materials Science, ‡Centre for Advanced Materials, Indian Association for the Cultivation of Science, Kolkata 700032, India.
Gour P
GP
Das
†Department of Materials Science, ‡Centre for Advanced Materials, Indian Association for the Cultivation of Science, Kolkata 700032, India.
Narayan
N
Pradhan
Au-ZnSe; coincidence site epitaxy; heterojunction; heteronanostructures; interface electronic structure