Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics.
Recently, growing interest in implantable bionics and biochemical sensors spurred the research for developing non-conventional electronics with excellent device characteristics at low operation voltages and prolonged device stability under physiological conditions. Herein, we report high-performance aqueous electrolyte-gated thin-film transistors using a sol-gel amorphous metal oxide semiconductor and aqueous electrolyte dielectrics based on small ionic salts. The proper selection of channel material (i.e., indium-gallium-zinc-oxide) and precautious passivation of non-channel areas enabled the development of simple but highly stable metal oxide transistors manifested by low operation voltages within 0.5 V, high transconductance of ~1.0 mS, large current on-off ratios over 10(7), and fast inverter responses up to several hundred hertz without device degradation even in physiologically-relevant ionic solutions. In conjunction with excellent transistor characteristics, investigation of the electrochemical nature of the metal oxide-electrolyte interface may contribute to the development of a viable bio-electronic platform directly interfacing with biological entities in vivo.
School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea.
Sungjun
S
Park
School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea.
SeYeong
S
Lee
1] School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea [2] Research Institute for Solar and Sustainable Energies, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea.
Chang-Hyun
CH
Kim
School of Mechatronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea.
Ilseop
I
Lee
School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea.
Won-June
WJ
Lee
School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea.
Sohee
S
Kim
School of Mechatronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea.
Byung-Geun
BG
Lee
School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea.
Jae-Hyung
JH
Jang
1] School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea [2] Research Institute for Solar and Sustainable Energies, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea.
Myung-Han
MH
Yoon