Dual Gate Black Phosphorus Field Effect Transistors on Glass for NOR Logic and Organic Light Emitting Diode Switching.
We have fabricated dual gate field effect transistors (FETs) with 12 nm-thin black phosphorus (BP) channel on glass substrate, where our BP FETs have a patterned-gate architecture with 30 nm-thick Al2O3 dielectrics on top and bottom of a BP channel. Top gate dielectric has simultaneously been used as device encapsulation layer, controlling the threshold voltage of FETs as well when FETs mainly operate under bottom gate bias. Bottom, top, and dual gate-controlling mobilities were estimated to be 277, 92, and 213 cm(2)/V s, respectively. Maximum ON-current was measured to be ∼5 μA at a drain voltage of -0.1 V but to be as high as ∼50 μA at -1 V, while ON/OFF current ratio appeared to be 3.6 × 10(3) V. As a result, our dual gate BP FETs demonstrate organic light emitting diode (OLED) switching for green and blue OLEDs, also demonstrating NOR logic functions by separately using top- and bottom-input.
Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea.
Jin Sung
JS
Kim
Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea.
Pyo Jin
PJ
Jeon
Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea.
Junyeong
J
Lee
Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea.
Kyunghee
K
Choi
Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea.
Hee Sung
HS
Lee
Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea.
Youngsuk
Y
Cho
Center for Optoelectronic Materials and Devices Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST) , Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791, Korea.
Young Tack
YT
Lee
Center for Optoelectronic Materials and Devices Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST) , Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791, Korea.
Do Kyung
DK
Hwang
Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea.
Seongil
S
Im
Black phosphorus; NOR logic; OLED switching; dual-gate FET; inverter