In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy.
Rhenium disulfide (ReS2) is a semiconducting layered transition metal dichalcogenide that exhibits a stable distorted 1T phase. The reduced symmetry of this system leads to in-plane anisotropy in various material properties. Here, we demonstrate the strong anisotropy in the Raman scattering response for linearly polarized excitation. Polarized Raman scattering is shown to permit a determination of the crystallographic orientation of ReS2 through comparison with direct structural analysis by scanning transmission electron microscopy (STEM). Analysis of the frequency difference of appropriate Raman modes is also shown to provide a means of precisely determining layer thickness up to four layers.
Daniel A
DA
Chenet
Burak
B
Aslan
Pinshane Y
PY
Huang
Chris
C
Fan
Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign , Urbana, Illinois 61801, United States.
Arend M
AM
van der Zande
Department of Applied Physics, Stanford University , Stanford, California 94305, United States.|SLAC National Accelerator Laboratory , 2575 Sand Hill Road, Menlo Park, California 94025, United States.
Tony F
TF
Heinz
James C
JC
Hone
2-D material; ReS2; Rhenium disulfide; STEM; anisotropic; polarized Raman spectroscopy; transition metal dichalcogenide