Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities.
Owing to its relativistic low-energy charge carriers, the interaction between graphene and various impurities leads to a wealth of new physics and degrees of freedom to control electronic devices. In particular, the behavior of graphene's charge carriers in response to potentials from charged Coulomb impurities is predicted to differ significantly from that of most materials. Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) can provide detailed information on both the spatial and energy dependence of graphene's electronic structure in the presence of a charged impurity. The design of a hybrid impurity-graphene device, fabricated using controlled deposition of impurities onto a back-gated graphene surface, has enabled several novel methods for controllably tuning graphene's electronic properties. Electrostatic gating enables control of the charge carrier density in graphene and the ability to reversibly tune the charge and/or molecular states of an impurity. This paper outlines the process of fabricating a gate-tunable graphene device decorated with individual Coulomb impurities for combined STM/STS studies. These studies provide valuable insights into the underlying physics, as well as signposts for designing hybrid graphene devices.
Department of Physics, University of California at Berkeley; Department of Chemistry, University of California at Berkeley.
Han Sae
HS
Jung
Department of Physics, University of California at Berkeley.
Hsin-Zon
HZ
Tsai
Department of Physics, University of California at Berkeley.
Dillon
D
Wong
Department of Physics, University of California at Berkeley.
Chad
C
Germany
Department of Physics, University of California at Berkeley.
Salman
S
Kahn
Department of Physics, University of California at Berkeley; Department of Chemical and Biomolecular Engineering, University of California at Berkeley.
Youngkyou
Y
Kim
Department of Physics, University of California at Berkeley.
Andrew S
AS
Aikawa
Department of Physics, University of California at Berkeley.
Dhruv K
DK
Desai
Department of Physics, University of California at Berkeley.
Griffin F
GF
Rodgers
Department of Physics, University of California at Berkeley.
Aaron J
AJ
Bradley
Department of Physics, University of California at Berkeley.
Jairo
J
Velasco
National Institute for Materials Science (Japan).
Kenji
K
Watanabe
National Institute for Materials Science (Japan).
Takashi
T
Taniguchi
Department of Physics, University of California at Berkeley; Materials Sciences Division, Lawrence Berkeley National Laboratory; Kavli Energy NanoSciences Institute, University of California at Berkeley and Lawrence Berkeley National Laboratory.
Feng
F
Wang
Department of Physics, University of California at Berkeley; Materials Sciences Division, Lawrence Berkeley National Laboratory; Kavli Energy NanoSciences Institute, University of California at Berkeley and Lawrence Berkeley National Laboratory.
Alex
A
Zettl
Department of Physics, University of California at Berkeley; Materials Sciences Division, Lawrence Berkeley National Laboratory; Kavli Energy NanoSciences Institute, University of California at Berkeley and Lawrence Berkeley National Laboratory; crommie@berkeley.edu.
Michael F
MF
Crommie
D004581:Electronics; D006108:Graphite / Q000737:chemistry*; D016252:Microscopy, Scanning Tunneling / Q000295:instrumentation* / Q000379:methods; D010825:Physics; D055672:Static Electricity
D006108:Graphite