Carrier Transport in Heterojunction Nanocrystals Under Strain.
We present a theory for carrier transport in semiconducting nanoscale heterostructures that emphasizes the effects of strain at the interface between two different crystal structures. An exactly solvable model shows that the interface region, or junction, acts as a scattering potential that facilitates charge separation. As a case study, we model a type-II CdS/ZnSe heterostructure. After advancing a theory similar to that employed in model molecular conductance calculations, we calculate the electron and hole photocurrents and conductances, including nonlinear effects, through the junction at steady state.
Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0215, United States.
Mark C
MC
Sweeney
Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0215, United States.
Joel D
JD
Eaves
bandgap; heterojunctions; segmented nanostructures; strain-field