title: Partial Dislocations in Graphene and Their Atomic Level Migration Dynamics.
abstract: We demonstrate the formation of partial dislocations in graphene at elevated temperatures of ≥500 °C with single atom resolution aberration corrected transmission electron microscopy. The partial dislocations spatially redistribute strain in the lattice, providing an energetically more favorable configuration to the perfect dislocation. Low-energy migration paths mediated by partial dislocation formation have been observed, providing insights into the atomistic dynamics of graphene during annealing. These results are important for understanding the high temperature plasticity of graphene and partial dislocation behavior in related crystal systems, such as diamond cubic materials.
authors: Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
authors: Alex W
authors: AW
authors: Robertson
authors: Department of Materials Science and Engineering, Seoul National University , Seoul, Korea.
authors: Gun-Do
authors: GD
authors: Lee
authors: Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
authors: Kuang
authors: K
authors: He
authors: Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
authors: Ye
authors: Y
authors: Fan
authors: Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
authors: Christopher S
authors: CS
authors: Allen
authors: Department of Materials Science and Engineering, Seoul National University , Seoul, Korea.
authors: Sungwoo
authors: S
authors: Lee
authors: Energy Materials Laboratory, Korean Institute of Energy Research , 152 Gajeong-ro, Yuseong-gu, Daejeon 305-343, Korea.
authors: Heeyeon
authors: H
authors: Kim
authors: Department of Materials Science and Engineering, Seoul National University , Seoul, Korea.
authors: Euijoon
authors: E
authors: Yoon
authors: Materials Science Division, Lawrence Berkeley National Lab , Berkeley, California 94720, United States.
authors: Haimei
authors: H
authors: Zheng
authors: Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
authors: Angus I
authors: AI
authors: Kirkland
authors: Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
authors: Jamie H
authors: JH
authors: Warner
keywords: Graphene; TEM; defects; dislocations