title: Thermal crosstalk in 3-dimensional RRAM crossbar array.
abstract: High density 3-dimensional (3D) crossbar resistive random access memory (RRAM) is one of the major focus of the new age technologies. To compete with the ultra-high density NAND and NOR memories, understanding of reliability mechanisms and scaling potential of 3D RRAM crossbar array is needed. Thermal crosstalk is one of the most critical effects that should be considered in 3D crossbar array application. The Joule heat generated inside the RRAM device will determine the switching behavior itself, and for dense memory arrays, the temperature surrounding may lead to a consequent resistance degradation of neighboring devices. In this work, thermal crosstalk effect and scaling potential under thermal effect in 3D RRAM crossbar array are systematically investigated. It is revealed that the reset process is dominated by transient thermal effect in 3D RRAM array. More importantly, thermal crosstalk phenomena could deteriorate device retention performance and even lead to data storage state failure from LRS (low resistance state) to HRS (high resistance state) of the disturbed RRAM cell. In addition, the resistance state degradation will be more serious with continuously scaling down the feature size. Possible methods for alleviating thermal crosstalk effect while further advancing the scaling potential are also provided and verified by numerical simulation.
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China.|Lab of Nanofabrication and Novel Devices Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China.|School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 China.
authors: Pengxiao
authors: P
authors: Sun
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China.|Lab of Nanofabrication and Novel Devices Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China.
authors: Nianduan
authors: N
authors: Lu
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China.|Lab of Nanofabrication and Novel Devices Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China.
authors: Ling
authors: L
authors: Li
authors: School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 China.
authors: Yingtao
authors: Y
authors: Li
authors: School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071 China.
authors: Hong
authors: H
authors: Wang
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China.|Lab of Nanofabrication and Novel Devices Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China.
authors: Hangbing
authors: H
authors: Lv
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China.|Lab of Nanofabrication and Novel Devices Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China.
authors: Qi
authors: Q
authors: Liu
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China.|Lab of Nanofabrication and Novel Devices Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China.
authors: Shibing
authors: S
authors: Long
authors: School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 China.
authors: Su
authors: S
authors: Liu
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China.|Lab of Nanofabrication and Novel Devices Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China.
authors: Ming
authors: M
authors: Liu