title: Electrolyte-gated graphene Schottky barrier transistors.
abstract: A new device architecture for flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene-organic-semiconductor-metal heterostructures and ion gel gate dielectrics is demonstrated. The devices show well-behaved p- and n-type characteristics under low-voltage operation (<1 V), yielding high current densities (>100 mA cm(-2) ) and on/off current ratios (>10(3) ).
authors: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, South Korea.
authors: Beom Joon
authors: BJ
authors: Kim
authors: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, South Korea.|Department of Physics, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors: Euyheon
authors: E
authors: Hwang
authors: Department of Chemical Engineering, Soongsil University, Seoul, 156-743, South Korea.
authors: Moon Sung
authors: MS
authors: Kang
authors: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, South Korea.|School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors: Jeong Ho
authors: JH
authors: Cho
keywords: Schottky barrier transistors; graphene; ion gels; low-voltage operations; organic semiconductors