title: Direct Growth of Single- and Few-Layer MoS2 on h-BN with Preferred Relative Rotation Angles.
abstract: Monolayer molybdenum disulfide (MoS2) is a promising two-dimensional direct-bandgap semiconductor with potential applications in atomically thin and flexible electronics. An attractive insulating substrate or mate for MoS2 (and related materials such as graphene) is hexagonal boron nitride (h-BN). Stacked heterostructures of MoS2 and h-BN have been produced by manual transfer methods, but a more efficient and scalable assembly method is needed. Here we demonstrate the direct growth of single- and few-layer MoS2 on h-BN by chemical vapor deposition (CVD) method, which is scalable with suitably structured substrates. The growth mechanisms for single-layer and few-layer samples are found to be distinct, and for single-layer samples low relative rotation angles (<5°) between the MoS2 and h-BN lattices prevail. Moreover, MoS2 directly grown on h-BN maintains its intrinsic 1.89 eV bandgap. Our CVD synthesis method presents an important advancement toward controllable and scalable MoS2-based electronic devices.
authors: Department of Physics, University of California , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.|Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Aiming
authors: A
authors: Yan
authors: Department of Physics, University of California , Berkeley, California 94720, United States.|Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Jairo
authors: J
authors: Velasco
authors: Department of Physics, University of California , Berkeley, California 94720, United States.
authors: Salman
authors: S
authors: Kahn
authors: National Institute for Materials Science , 1-1 Namiki, Tsukuba, 305-0044, Japan.
authors: Kenji
authors: K
authors: Watanabe
authors: National Institute for Materials Science , 1-1 Namiki, Tsukuba, 305-0044, Japan.
authors: Takashi
authors: T
authors: Taniguchi
authors: Department of Physics, University of California , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.|Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Feng
authors: F
authors: Wang
authors: Department of Physics, University of California , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.|Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Michael F
authors: MF
authors: Crommie
authors: Department of Physics, University of California , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.|Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Alex
authors: A
authors: Zettl
keywords: Molybdenum disulfide; chemical vapor deposition; heterostructure; hexagonal boron nitride; screw-dislocation driven growth; transition metal dichalcogenides