title: Wide gamut white light emitting diodes using quantum dot-silicone film protected by an atomic layer deposited TiO2 barrier.
abstract: Wide gamut light emitting diodes using quantum dot-silicone film protected by atomic layer deposited TiO2 film were demonstrated. The core/shell QDs with multi-emission peaks were synthesised by a one-pot approach, in which the emission wavelength and colour composition were in situ adjusted during the synthetic process.
authors: Department of Materials Science & Engineering, National Tsing Hua University, No. 101, Sec. 2, Guangfu Rd., Hsinchu City 300, Taiwan. chenhs@mx.nthu.edu.tw.
authors: Guan-Hong
authors: GH
authors: Chen
authors: Chang-Wei
authors: CW
authors: Yeh
authors: Ming-Hua
authors: MH
authors: Yeh
authors: Shih-Jung
authors: SJ
authors: Ho
authors: Hsueh-Shih
authors: HS
authors: Chen