title: Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier.
abstract: Phase-change memory (PCM) is an important class of data storage, yet lowering the programming current of individual devices is known to be a significant challenge. Here we improve the energy-efficiency of PCM by placing a graphene layer at the interface between the phase-change material, Ge2Sb2Te5 (GST), and the bottom electrode (W) heater. Graphene-PCM (G-PCM) devices have ∼40% lower RESET current compared to control devices without the graphene. This is attributed to the graphene as an added interfacial thermal resistance which helps confine the generated heat inside the active PCM volume. The G-PCM achieves programming up to 10(5) cycles, and the graphene could further enhance the PCM endurance by limiting atomic migration or material segregation at the bottom electrode interface.
authors: Chiyui
authors: C
authors: Ahn
authors: Scott W
authors: SW
authors: Fong
authors: Samsung Advanced Institute of Technology (SAIT) , Suwon, 443-803, South Korea.
authors: Yongsung
authors: Y
authors: Kim
authors: Seunghyun
authors: S
authors: Lee
authors: Aditya
authors: A
authors: Sood
authors: Christopher M
authors: CM
authors: Neumann
authors: Mehdi
authors: M
authors: Asheghi
authors: Kenneth E
authors: KE
authors: Goodson
authors: Eric
authors: E
authors: Pop
authors: H-S Philip
authors: HS
authors: Wong
keywords: Graphene; Joule heating; phase-change memory; reset current; thermal boundary resistance