title: Dielectric relaxation, resonance and scaling behaviors in Sr3Co2Fe24O41 hexaferrite.
abstract: The dielectric properties of Z-type hexaferrite Sr3Co2Fe24O41 (SCFO) have been investigated as a function of temperature from 153 to 503 K between 1 and 2 GHz. The dielectric responses of SCFO are found to be frequency dependent and thermally activated. The relaxation-type dielectric behavior is observed to be dominating in the low frequency region and resonance-type dielectric behavior is found to be dominating above 10(8) Hz. This frequency dependence of dielectric behavior is explained by the damped harmonic oscillator model with temperature dependent coefficients. The imaginary part of impedance (Z″) and modulus (M″) spectra show that there is a distribution of relaxation times. The scaling behaviors of Z″ and M″ spectra further suggest that the distribution of relaxation times is temperature independent at low frequencies. The dielectric loss spectra at different temperatures have not shown a scaling behavior above 10(8) Hz. A comparison between the Z″ and the M″ spectra indicates that the short-range charges motion dominates at low temperatures and the long-range charges motion dominates at high temperatures. The above results indicate that the dielectric dispersion mechanism in SCFO is temperature independent at low frequencies and temperature dependent at high frequencies due to the domination of resonance behavior.
authors: Jiangsu Key Laboratory of Thin Films, College of Physics, Optoelectronics and Energy, Soochow University, Suzhou 215006, P. R. China.
authors: Rujun
authors: R
authors: Tang
authors: Jiangsu Key Laboratory of Thin Films, College of Physics, Optoelectronics and Energy, Soochow University, Suzhou 215006, P. R. China.
authors: Chen
authors: C
authors: Jiang
authors: Testing and Analysis Center, Soochow University, Suzhou 215006, P. R. China.
authors: Wenhu
authors: W
authors: Qian
authors: Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843-3128, USA.
authors: Jie
authors: J
authors: Jian
authors: School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China.
authors: Xin
authors: X
authors: Zhang
authors: Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843-3128, USA.
authors: Haiyan
authors: H
authors: Wang
authors: Jiangsu Key Laboratory of Thin Films, College of Physics, Optoelectronics and Energy, Soochow University, Suzhou 215006, P. R. China.|College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, P. R. China.
authors: Hao
authors: H
authors: Yang