title: Band Gap Engineering of In2TiO5 for H2 Production under Near-infrared Light.
abstract: In2TiO5, containing both early transition metal (d(0)) and p-block metal (d(10)), is a very promising candidate for possible application in H2 production because of its suitable edges of conduction and valence bands and the crystal structure, which is considered to favor mobility of charge carriers. Herein we report, for the first time, the synthesis of novel oxygen vacancies (OV), N-doped In2TiO5 (OV,N-In2TiO5) with controllable band gap. The resultant OV,N-In2TiO5 sample was prepared by a multistep sol-gel calcination process and studied as a near-infrared (NIR) light-driven photocatalyst for H2 production. OV and N-doping can effectively extend the photoresponse of In2TiO5 to the NIR region due to an interband springboard and the reduced band gap, thus leading to efficient NIR light photocatalytic H2 production activity with Pt as a cocatalyst.
authors: Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Department of Chemistry, Beijing Institute of Technology , Beijing 100081, People's Republic of China.
authors: Ding
authors: D
authors: Wei
authors: Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Department of Chemistry, Beijing Institute of Technology , Beijing 100081, People's Republic of China.
authors: Lihua
authors: L
authors: Yao
authors: Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Department of Chemistry, Beijing Institute of Technology , Beijing 100081, People's Republic of China.
authors: Song
authors: S
authors: Yang
authors: Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Department of Chemistry, Beijing Institute of Technology , Beijing 100081, People's Republic of China.
authors: Zhentao
authors: Z
authors: Cui
authors: Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Department of Chemistry, Beijing Institute of Technology , Beijing 100081, People's Republic of China.
authors: Bingxue
authors: B
authors: Wei
authors: Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Department of Chemistry, Beijing Institute of Technology , Beijing 100081, People's Republic of China.
authors: Minhua
authors: M
authors: Cao
authors: Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Department of Chemistry, Beijing Institute of Technology , Beijing 100081, People's Republic of China.
authors: Changwen
authors: C
authors: Hu
keywords: In2TiO5; near-infrared light; nitrogen doping; oxygen vacancies; photocatalysis