title: Aligned Growth of Hexagonal Boron Nitride Monolayer on Germanium.
abstract: A hexagonal boron nitride monolayer with aligned orientations is grown on reusable semiconducting germanium. The number of primary orientations of the h-BN domains depends on the symmetry of the underlying crystal face, and Ge (110) gives rise to only two opposite orientations. The structures and electrical properties of grain boundaries between h-BN domains with opposite orientations are also systematically analyzed.
authors: State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Educationand Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
authors: Jun
authors: J
authors: Yin
authors: State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Educationand Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
authors: Xiaofei
authors: X
authors: Liu
authors: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
authors: Wanglin
authors: W
authors: Lu
authors: State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Educationand Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
authors: Jidong
authors: J
authors: Li
authors: Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
authors: Yuanzhi
authors: Y
authors: Cao
authors: State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Educationand Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
authors: Yao
authors: Y
authors: Li
authors: State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Educationand Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
authors: Ying
authors: Y
authors: Xu
authors: State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Educationand Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
authors: Xuemei
authors: X
authors: Li
authors: Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
authors: Jun
authors: J
authors: Zhou
authors: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
authors: Chuanhong
authors: C
authors: Jin
authors: State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Educationand Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
authors: Wanlin
authors: W
authors: Guo
keywords: aligned growth; boron nitride; germanium; grain boundaries; hexagonal boron nitride; monolayers