title: Transport Gap Opening and High On-Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries.
abstract: Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on-off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on-off ratio of 10(4) by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of ∼0.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on-off current ratios using graphene on cubic-SiC.
authors: School of Physics, Beijing Institute of Technology , Beijing 100081, People's Republic of China.
authors: Han-Chun
authors: HC
authors: Wu
authors: CRANN, School of Physics, Trinity College Dublin , Dublin 2, Ireland.|Institute of Solid State Physics, Russian Academy of Sciences , Chernogolovka, Moscow District 142432, Russian Federation.
authors: Alexander N
authors: AN
authors: Chaika
authors: Department of Physics, National Taiwan University , Taipei 10617, Taiwan.
authors: Tsung-Wei
authors: TW
authors: Huang
authors: CRANN, School of Physics, Trinity College Dublin , Dublin 2, Ireland.
authors: Askar
authors: A
authors: Syrlybekov
authors: KSU-Aramco Center, King Saud University , Riyadh 11451, Saudi Arabia.
authors: Mourad
authors: M
authors: Abid
authors: Institute of Solid State Physics, Russian Academy of Sciences , Chernogolovka, Moscow District 142432, Russian Federation.|HASYLAB at DESY , D-22607 Hamburg, Germany.|Institut für Theoretische Physik, Universität Hamburg , Jungiusstrasse 9, D-20355 Hamburg, Germany.
authors: Victor Yu
authors: VY
authors: Aristov
authors: HASYLAB at DESY , D-22607 Hamburg, Germany.
authors: Olga V
authors: OV
authors: Molodtsova
authors: HASYLAB at DESY , D-22607 Hamburg, Germany.
authors: Sergey V
authors: SV
authors: Babenkov
authors: Helmholtz-Zentrum Berlin für Materialien und Energie , D-12489 Berlin, Germany.|Freie Universität Berlin , D-14195 Berlin, Germany.
authors: D
authors: D
authors: Marchenko
authors: Helmholtz-Zentrum Berlin für Materialien und Energie , D-12489 Berlin, Germany.
authors: Jaime
authors: J
authors: Sánchez-Barriga
authors: Helmholtz-Zentrum Berlin für Materialien und Energie , D-12489 Berlin, Germany.
authors: Partha Sarathi
authors: PS
authors: Mandal
authors: Helmholtz-Zentrum Berlin für Materialien und Energie , D-12489 Berlin, Germany.
authors: Andrei Yu
authors: AY
authors: Varykhalov
authors: MAX-lab, Lund University , Box 118, 22100 Lund, Sweden.
authors: Yuran
authors: Y
authors: Niu
authors: CRANN, School of Physics, Trinity College Dublin , Dublin 2, Ireland.
authors: Barry E
authors: BE
authors: Murphy
authors: CRANN, School of Physics, Trinity College Dublin , Dublin 2, Ireland.
authors: Sergey A
authors: SA
authors: Krasnikov
authors: CRANN, School of Physics, Trinity College Dublin , Dublin 2, Ireland.
authors: Olaf
authors: O
authors: Lübben
authors: CRANN, School of Physics, Trinity College Dublin , Dublin 2, Ireland.
authors: Jing Jing
authors: JJ
authors: Wang
authors: Institute of Plasma Physics, Chinese Academy of Sciences , Hefei 230031, People's Republic of China.
authors: Huajun
authors: H
authors: Liu
authors: Electronic Engineering Institute , Hefei 230037, People's Republic of China.
authors: Li
authors: L
authors: Yang
authors: CRANN, School of Physics, Trinity College Dublin , Dublin 2, Ireland.
authors: Hongzhou
authors: H
authors: Zhang
authors: KSU-Aramco Center, King Saud University , Riyadh 11451, Saudi Arabia.
authors: Mohamed
authors: M
authors: Abid
authors: Saudi Aramco Materials Performance Unit TSD, Research & Development Center, Dharhan 31311, Saudi Arabia.
authors: Yahya T
authors: YT
authors: Janabi
authors: Institute of Solid State Physics, Russian Academy of Sciences , Chernogolovka, Moscow District 142432, Russian Federation.
authors: Sergei N
authors: SN
authors: Molotkov
authors: Department of Physics, National Taiwan University , Taipei 10617, Taiwan.
authors: Ching-Ray
authors: CR
authors: Chang
authors: CRANN, School of Physics, Trinity College Dublin , Dublin 2, Ireland.
authors: Igor
authors: I
authors: Shvets
keywords: ARPES; nanodomain boundary; scanning tunneling microscopy; transport gap; trilayer graphene