title: Free-Space Nanometer Wiring via Nanotip Manipulation.
abstract: Relentless efforts in semiconductor technology have driven nanometer-scale miniaturization of transistors, diodes, and interconnections in electronic chips. Free-space writing enables interconnections of stacked modules separated by an arbitrary distance, leading to ultimate integration of electronics. We have developed a free-space method for nanometer-scale wiring on the basis of manipulating a metallic nanotip while applying a bias voltage without radiative heating, lithography, etching, or electrodeposition. The method is capable of fabricating wires with widths as low as 1-6 nm and lengths exceeding 200 nm with a breakdown current density of 8 TA/m(2). Structural evolution and conduction during wire formation were analyzed by direct atomistic visualization using in situ high-resolution transmission electron microscopy.
authors: Division of Materials Science, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan.
authors: Tokushi
authors: T
authors: Kizuka
authors: Division of Materials Science, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan.
authors: Shin
authors: S
authors: Ashida