title: High-Performance Sensors Based on Resistance Fluctuations of Single-Layer-Graphene Transistors.
abstract: One of the most interesting predicted applications of graphene-monolayer-based devices is as high-quality sensors. In this article, we show, through systematic experiments, a chemical vapor sensor based on the measurement of low-frequency resistance fluctuations of single-layer-graphene field-effect-transistor devices. The sensor has extremely high sensitivity, very high specificity, high fidelity, and fast response times. The performance of the device using this scheme of measurement (which uses resistance fluctuations as the detection parameter) is more than 2 orders of magnitude better than a detection scheme in which changes in the average value of the resistance is monitored. We propose a number-density-fluctuation-based model to explain the superior characteristics of a noise-measurement-based detection scheme presented in this article.
authors: Department of Physics, Indian Institute of Science , Bangalore, Karnataka, India 560012.
authors: Kazi Rafsanjani
authors: KR
authors: Amin
authors: Department of Physics, Indian Institute of Science , Bangalore, Karnataka, India 560012.
authors: Aveek
authors: A
authors: Bid
keywords: field-effect transistor; graphene; noise; number-density fluctuation; resistance fluctuations; sensor