title: Ultra-low voltage and ultra-low power consumption nonvolatile operation of a three-terminal atomic switch.
abstract: Nonvolatile three-terminal operation, with a very small range of bias sweeping (-80 to 250 mV), a high on/off ratio of up to six orders of magnitude, and a very small gate leakage current (<1 pA), is demonstrated using an Ag (gate)/Ta2 O5 (ionic transfer layer)/Pt (source), Pt (drain) three-terminal atomic switch structure.
authors: World Premier International (WPI) Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan.|Japan Science and Technology Agency, CREST, Chiyoda, Tokyo, 102-0075, Japan.|School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China.
authors: Qi
authors: Q
authors: Wang
authors: World Premier International (WPI) Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan.|Japan Science and Technology Agency, CREST, Chiyoda, Tokyo, 102-0075, Japan.
authors: Yaomi
authors: Y
authors: Itoh
authors: World Premier International (WPI) Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan.|Japan Science and Technology Agency, CREST, Chiyoda, Tokyo, 102-0075, Japan.
authors: Tohru
authors: T
authors: Tsuruoka
authors: World Premier International (WPI) Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan.
authors: Masakazu
authors: M
authors: Aono
authors: World Premier International (WPI) Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan.|Japan Science and Technology Agency, CREST, Chiyoda, Tokyo, 102-0075, Japan.|Faculty of Science and Engineering, Waseda University, 3-4-1 Ookubo, Shinjuku-ku, Tokyo, 169-8555, Japan.
authors: Tsuyoshi
authors: T
authors: Hasegawa
keywords: ReRAM; atomic switches; low voltage; redox; three terminal