title: Atomic-scale luminescence measurement and theoretical analysis unveiling electron energy dissipation at a p-type GaAs(110) surface.
abstract: Luminescence of p-type GaAs was induced by electron injection from the tip of a scanning tunnelling microscope into a GaAs(110) surface. Atomically-resolved photon maps revealed a significant reduction in luminescence intensity at surface electronic states localized near Ga atoms. Theoretical analysis based on first principles calculations and a rate equation approach was performed to describe the perspective of electron energy dissipation at the surface. Our study reveals that non-radiative recombination through the surface states (SS) is a dominant process for the electron energy dissipation at the surface, which is suggestive of the fast scattering of injected electrons into the SS.
authors: SISL RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
authors: Hiroshi
authors: H
authors: Imada
authors: Kuniyuki
authors: K
authors: Miwa
authors: Jaehoon
authors: J
authors: Jung
authors: Tomoko K
authors: TK
authors: Shimizu
authors: Naoki
authors: N
authors: Yamamoto
authors: Yousoo
authors: Y
authors: Kim