title: Tailoring the Two Dimensional Electron Gas at Polar ABO3/SrTiO3 Interfaces for Oxide Electronics.
abstract: The 2D electron gas at the polar/non-polar oxide interface has become an important platform for several novel oxide electronic devices. In this paper, the transport properties of a wide range of polar perovskite oxide ABO3/SrTiO3 (STO) interfaces, where ABO3 includes LaAlO3, PrAlO3, NdAlO3, NdGaO3 and LaGaO3 in both crystalline and amorphous forms, were investigated. A robust 4 unit cell (uc) critical thickness for metal insulator transition was observed for crystalline polar layer/STO interface while the critical thickness for amorphous ones was strongly dependent on the B site atom and its oxygen affinity. For the crystalline interfaces, a sharp transition to the metallic state (i.e. polarization catastrophe induced 2D electron gas only) occurs at a growth temperature of 515 °C which corresponds to a critical relative crystallinity of ~70 ± 10% of the LaAlO3 overlayer. This temperature is generally lower than the metal silicide formation temperature and thus offers a route to integrate oxide heterojunction based devices on silicon.
authors: NUSNNI-Nanocore, National University of Singapore, Singapore 117411, Singapore.|National University of Singapore Graduate School for Integrative Sciences and Engineering (NGS), 28 Medical Drive, Singapore 117456.
authors: Changjian
authors: C
authors: Li
authors: NUSNNI-Nanocore, National University of Singapore, Singapore 117411, Singapore.|Department of Physics, National University of Singapore, Singapore 117542, Singapore.
authors: Zhiqi
authors: Z
authors: Liu
authors: NUSNNI-Nanocore, National University of Singapore, Singapore 117411, Singapore.
authors: Weiming
authors: W
authors: Lü
authors: NUSNNI-Nanocore, National University of Singapore, Singapore 117411, Singapore.|Department of Physics, National University of Singapore, Singapore 117542, Singapore.
authors: Xiao Renshaw
authors: XR
authors: Wang
authors: NUSNNI-Nanocore, National University of Singapore, Singapore 117411, Singapore.|Department of Physics, National University of Singapore, Singapore 117542, Singapore.
authors: Anil
authors: A
authors: Annadi
authors: NUSNNI-Nanocore, National University of Singapore, Singapore 117411, Singapore.
authors: Zhen
authors: Z
authors: Huang
authors: NUSNNI-Nanocore, National University of Singapore, Singapore 117411, Singapore.|Department of Physics, National University of Singapore, Singapore 117542, Singapore.
authors: Shengwei
authors: S
authors: Zeng
authors: NUSNNI-Nanocore, National University of Singapore, Singapore 117411, Singapore.|Department of Physics, National University of Singapore, Singapore 117542, Singapore.
authors: Ariando
authors: NUSNNI-Nanocore, National University of Singapore, Singapore 117411, Singapore.|National University of Singapore Graduate School for Integrative Sciences and Engineering (NGS), 28 Medical Drive, Singapore 117456.|Department of Physics, National University of Singapore, Singapore 117542, Singapore.|Department of Electrical and Computer Engineering, National University of Singapore 117556, Singapore.|Department of Materials Science &Engineering, National University of Singapore 117575, Singapore.
authors: T
authors: T
authors: Venkatesan