title: BN-Enabled Epitaxy of Pb(1-x)Sn(x)Se Nanoplates on SiO₂/Si for High-Performance Mid-Infrared Detection.
abstract: By designing a few-layer boron nitried (BN) buffer layer, topological crystalline insulator Pb(1-x)Sn(x)Se nanoplates are directly grown on SiO2/Si, which shows high compatibility with current Si-based integrated circuit technology. Back-gated field-effect transistors of Pb(1-x)Sn(x)Se nanoplates exhibit a room-temperature carrier mobility of 0.73-4.90 cm(2) V(-1) s(-1), comparable to layered materials and molecular crystals, and high-efficiency mid-IR detection (1.9-2.0 μm).
authors: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors: Qisheng
authors: Q
authors: Wang
authors: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors: Yao
authors: Y
authors: Wen
authors: School of Physics, Peking University, Beijing, 100871, P. R. China.
authors: Fengrui
authors: F
authors: Yao
authors: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors: Yun
authors: Y
authors: Huang
authors: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors: Zhenxing
authors: Z
authors: Wang
authors: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors: Molin
authors: M
authors: Li
authors: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors: Xueying
authors: X
authors: Zhan
authors: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors: Kai
authors: K
authors: Xu
authors: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors: Fengmei
authors: F
authors: Wang
authors: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors: Feng
authors: F
authors: Wang
authors: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors: Jie
authors: J
authors: Li
authors: School of Physics, Peking University, Beijing, 100871, P. R. China.
authors: Kaihui
authors: K
authors: Liu
authors: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors: Chao
authors: C
authors: Jiang
authors: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese Academy of Science, Beijing, 100083, P. R. China.
authors: Fengqi
authors: F
authors: Liu
authors: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors: Jun
authors: J
authors: He
keywords: Pb1-xSnxSe nanoplates; epitaxial growth; few-layer BN; functional substrates; mid-infrared detection