title: Magnetotransport Properties of Cd3As2 Nanostructures.
abstract: Three-dimensional (3D) topological Dirac semimetal has a linear energy dispersion in 3D momentum space, and it can be viewed as an analogue of graphene. Extensive efforts have been devoted to the understanding of bulk materials, but yet it remains a challenge to explore the intriguing physics in low-dimensional Dirac semimetals. Here, we report on the synthesis of Cd3As2 nanowires and nanobelts and a systematic investigation of their magnetotransport properties. Temperature-dependent ambipolar behavior is evidently demonstrated, suggesting the presence of finite-size of bandgap in nanowires. Cd3As2 nanobelts, however, exhibit metallic characteristics with a high carrier mobility exceeding 32,000 cm(2) V(-1) s(-1) and pronounced anomalous double-period Shubnikov-de Haas (SdH) oscillations. Unlike the bulk counterpart, the Cd3As2 nanobelts reveal the possibility of unusual change of the Fermi sphere owing to the suppression of the dimensionality. More importantly, their SdH oscillations can be effectively tuned by the gate voltage. The successful synthesis of Cd3As2 nanostructures and their rich physics open up exciting nanoelectronic applications of 3D Dirac semimetals.
authors: State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.|Collaborative Innovation Center of Advanced Microstructures, Fudan University , Shanghai 200433, China.
authors: Enze
authors: E
authors: Zhang
authors: State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.|Collaborative Innovation Center of Advanced Microstructures, Fudan University , Shanghai 200433, China.
authors: Yanwen
authors: Y
authors: Liu
authors: State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.|Collaborative Innovation Center of Advanced Microstructures, Fudan University , Shanghai 200433, China.
authors: Weiyi
authors: W
authors: Wang
authors: State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.|Collaborative Innovation Center of Advanced Microstructures, Fudan University , Shanghai 200433, China.
authors: Cheng
authors: C
authors: Zhang
authors: State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University , Shanghai 200433, China.
authors: Peng
authors: P
authors: Zhou
authors: Materials Engineering, The University of Queensland , Brisbane, QLD QLD 4072, Australia.
authors: Zhi-Gang
authors: ZG
authors: Chen
authors: Materials Engineering, The University of Queensland , Brisbane, QLD QLD 4072, Australia.|Centre for Microscopy and Microanalysis, The University of Queensland , Brisbane, QLD 4072, Australia.
authors: Jin
authors: J
authors: Zou
authors: State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.|Collaborative Innovation Center of Advanced Microstructures, Fudan University , Shanghai 200433, China.
authors: Faxian
authors: F
authors: Xiu
keywords: Shubnikov-de Haas oscillations; ambipolar effect; gate tunability; nanobelt; nanowire