title: Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2.
abstract: The controlled synthesis of large-area, atomically thin molybdenum ditelluride (MoTe2) crystals is crucial for its various applications based on the attractive properties of this emerging material. In this work, we developed a chemical vapor deposition synthesis to produce large-area, uniform, and highly crystalline few-layer 2H and 1T' MoTe2 films. It was found that these two different phases of MoTe2 can be grown depending on the choice of Mo precursor. Because of the highly crystalline structure, the as-grown few-layer 2H MoTe2 films display electronic properties that are comparable to those of mechanically exfoliated MoTe2 flakes. Our growth method paves the way for the large-scale application of MoTe2 in high-performance nanoelectronics and optoelectronics.
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
authors: Lin
authors: L
authors: Zhou
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.|State Key Laboratory of Heavy Oil Processing, China University of Petroleum , Beijing 102249, China.
authors: Kai
authors: K
authors: Xu
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
authors: Ahmad
authors: A
authors: Zubair
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
authors: Albert D
authors: AD
authors: Liao
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
authors: Wenjing
authors: W
authors: Fang
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.|School of Physics and Electronics, State Key Laboratory of Powder Metallurgy, Central South University , Changsha 410083, China.
authors: Fangping
authors: F
authors: Ouyang
authors: Material Sciences and Engineering, National Tsing-Hua University , Hsinchu 30013, Taiwan.
authors: Yi-Hsien
authors: YH
authors: Lee
authors: Department of Chemistry, Graduate School of Science and Engineering, Saitama University , Saitama 338-8570, Japan.
authors: Keiji
authors: K
authors: Ueno
authors: Department of Physics, Tohoku University , Sendai 980-8578, Japan.
authors: Riichiro
authors: R
authors: Saito
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
authors: Tomás
authors: T
authors: Palacios
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
authors: Jing
authors: J
authors: Kong
authors: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.|Department of Physics, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
authors: Mildred S
authors: MS
authors: Dresselhaus