title: A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2.
abstract: A MoSe2 p-n diode with a van der Waals homojunction is demonstrated by stacking undoped (n-type) and Nb-doped (p-type) semiconducting MoSe2 synthesized by chemical vapor transport for Nb substitutional doping. The p-n diode reveals an ideality factor of ≈1.0 and a high external quantum efficiency (≈52%), which increases in response to light intensity due to the negligible recombination rate at the clean homojunction interface.
authors: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 440-746, South Korea.|Department of Energy Science, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors: Youngjo
authors: Y
authors: Jin
authors: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 440-746, South Korea.|Department of Energy Science, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors: Dong Hoon
authors: DH
authors: Keum
authors: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 440-746, South Korea.|Department of Energy Science, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors: Sung-Jin
authors: SJ
authors: An
authors: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 440-746, South Korea.|Department of Energy Science, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors: Joonggyu
authors: J
authors: Kim
authors: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 440-746, South Korea.
authors: Hyun Seok
authors: HS
authors: Lee
authors: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 440-746, South Korea.|Department of Energy Science, Sungkyunkwan University, Suwon, 440-746, South Korea.|Department of Physics, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors: Young Hee
authors: YH
authors: Lee
keywords: elemental doping; p-n diodes; p-type MoSe2; transition metal dichalcogenides; van der Waals homojunction