title: Edge state magnetism in zigzag-interfaced graphene via spin susceptibility measurements.
abstract: Development of graphene spintronic devices relies on transforming it into a material with a spin order. Attempts to make graphene magnetic by introducing zigzag edge states have failed due to energetically unstable structure of torn zigzag edges. Here, we report on the formation of nanoridges, i.e., stable crystallographically oriented fluorine monoatomic chains, and provide experimental evidence for strongly coupled magnetic states at the graphene-fluorographene interfaces. From the first principle calculations, the spins at the localized edge states are ferromagnetically ordered within each of the zigzag interface whereas the spin interaction across a nanoridge is antiferromagnetic. Magnetic susceptibility data agree with this physical picture and exhibit behaviour typical of quantum spin-ladder system with ferromagnetic legs and antiferromagnetic rungs. The exchange coupling constant along the rungs is measured to be 450 K. The coupling is strong enough to consider graphene with fluorine nanoridges as a candidate for a room temperature spintronics material.
authors: Lappeenranta University of Technology, FI-53851 Lappeenranta, Finland.|Ioffe Physical Technical Institute, Polytechnicheskaya 26, 194021 St. Petersburg, Russia.
authors: T L
authors: TL
authors: Makarova
authors: Ioffe Physical Technical Institute, Polytechnicheskaya 26, 194021 St. Petersburg, Russia.
authors: A L
authors: AL
authors: Shelankov
authors: Ioffe Physical Technical Institute, Polytechnicheskaya 26, 194021 St. Petersburg, Russia.
authors: A A
authors: AA
authors: Zyrianova
authors: Ioffe Physical Technical Institute, Polytechnicheskaya 26, 194021 St. Petersburg, Russia.
authors: A I
authors: AI
authors: Veinger
authors: Ioffe Physical Technical Institute, Polytechnicheskaya 26, 194021 St. Petersburg, Russia.
authors: T V
authors: TV
authors: Tisnek
authors: Lappeenranta University of Technology, FI-53851 Lappeenranta, Finland.
authors: E
authors: E
authors: Lähderanta
authors: Ben-Gurion University of the Negev, 84105, Beer-Sheva, Israel.
authors: A I
authors: AI
authors: Shames
authors: Nikolaev Institute of Inorganic Chemistry SB RAS, 630060, Novosibirsk, Russia.
authors: A V
authors: AV
authors: Okotrub
authors: Nikolaev Institute of Inorganic Chemistry SB RAS, 630060, Novosibirsk, Russia.
authors: L G
authors: LG
authors: Bulusheva
authors: Nikolaev Institute of Inorganic Chemistry SB RAS, 630060, Novosibirsk, Russia.
authors: G N
authors: GN
authors: Chekhova
authors: Nikolaev Institute of Inorganic Chemistry SB RAS, 630060, Novosibirsk, Russia.
authors: D V
authors: DV
authors: Pinakov
authors: Nikolaev Institute of Inorganic Chemistry SB RAS, 630060, Novosibirsk, Russia.
authors: I P
authors: IP
authors: Asanov
authors: Vinča Institute of Nuclear Sciences, P.O. Box 522, RS-11001 Belgrade, Serbia.
authors: Ž
authors: Ž
authors: Šljivančanin