title: GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures.
abstract: A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)/quantum dot (QD) active element is reported and is assessed with regard to the resolution obtainable in an optical coherence tomography system. We report on the appearance of strong emission from higher order optical transition from the QW in a hybrid QW/QD structure. This additional emission broadening method contributes significantly to obtaining a 3-dB linewidth of 290 nm centered at 1200 nm, with 2.4 mW at room temperature.
authors: Department of Electronic and Electrical Engineering, University of Sheffield, North Campus, Broad Lane, Sheffield, S3 7HQ, UK, siming.chen@ucl.ac.uk.
authors: Siming
authors: S
authors: Chen
authors: Wei
authors: W
authors: Li
authors: Ziyang
authors: Z
authors: Zhang
authors: David
authors: D
authors: Childs
authors: Kejia
authors: K
authors: Zhou
authors: Jonathan
authors: J
authors: Orchard
authors: Ken
authors: K
authors: Kennedy
authors: Maxime
authors: M
authors: Hugues
authors: Edmund
authors: E
authors: Clarke
authors: Ian
authors: I
authors: Ross
authors: Osamu
authors: O
authors: Wada
authors: Richard
authors: R
authors: Hogg