Probing Spin Accumulation induced Magnetocapacitance in a Single Electron Transistor.
The interplay between spin and charge in solids is currently among the most discussed topics in condensed matter physics. Such interplay gives rise to magneto-electric coupling, which in the case of solids was named magneto-electric effect, as predicted by Curie on the basis of symmetry considerations. This effect enables the manipulation of magnetization using electrical field or, conversely, the manipulation of electrical polarization by magnetic field. The latter is known as the magnetocapacitance effect. Here, we show that non-equilibrium spin accumulation can induce tunnel magnetocapacitance through the formation of a tiny charge dipole. This dipole can effectively give rise to an additional serial capacitance, which represents an extra charging energy that the tunneling electrons would encounter. In the sequential tunneling regime, this extra energy can be understood as the energy required for a single spin to flip. A ferromagnetic single-electron-transistor with tunable magnetic configuration is utilized to demonstrate the proposed mechanism. It is found that the extra threshold energy is experienced only by electrons entering the islands, bringing about asymmetry in the measured Coulomb diamond. This asymmetry is an unambiguous evidence of spin accumulation induced tunnel magnetocapacitance, and the measured magnetocapacitance value is as high as 40%.
Department of Physics, National Taiwan University, Taipei 106, Taiwan.|Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 115, Taiwan.|Institute of Physics, Academia Sinica, Taipei 115, Taiwan.
Teik-Hui
TH
Lee
Institute of Physics, Academia Sinica, Taipei 115, Taiwan.
Chii-Dong
CD
Chen