Improvement of Gate Dielectric Integrity Using O2 Plasma Treatment Prior to Atomic Layer Deposition on Chemical Vapor Deposition Grown Graphene.
We report that oxygen plasma treatment of CVD-grown graphene can improve the integrity of an aluminum oxide layer deposited by atomic layer deposition. There is an optimum process window for treatment with O2 plasma which does not cause serious degradation in the quality of the graphene, but provides significant improvement in the gate dielectric integrity in relation to capacitance uniformity, leakage current, and dielectric breakdown voltage.
Onejae
O
Sul
Jaehoon
J
Bong
Alex
A
Yoon
Byung Jin
BJ
Cho
D000537:Aluminum Oxide / Q000737:chemistry; D055664:Electrochemical Techniques; D006108:Graphite / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry; D010100:Oxygen / Q000737:chemistry*; D058626:Plasma Gases / Q000737:chemistry*
D058626:Plasma Gases; D006108:Graphite; D000537:Aluminum Oxide; D010100:Oxygen