Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes.
A facile method to facilitate epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was developed by using single-walled carbon nanotubes (SWCNTs). High-quality GaN was achieved on sapphire by simply coating the SWCNTs as an intermediate layer for stress and defect mitigation. SWCNTs maintained their integrity at high reaction temperature and led to suppression of edge dislocations and biaxial stress relaxation by up to 0.32 GPa in a GaN template layer. InGaN/GaN multi-quantum-well light-emitting diodes (LEDs) on this high-quality GaN template offered enhanced internal quantum efficiency and light output power with reduced efficiency droop. The method developed here has high potential to replace current ELO methods such as patterned sapphire substrates or buffer layers like SiO2 and SiNx.
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea. eksuh@jbnu.ac.kr.
Ah Hyun
AH
Park
Tae Hoon
TH
Seo
S
S
Chandramohan
Gun Hee
GH
Lee
Kyung Hyun
KH
Min
Seula
S
Lee
Myung Jong
MJ
Kim
Yong Gyoo
YG
Hwang
Eun-Kyung
EK
Suh