Effects of Ta Addition Through Co-Sputtering on the Electrical Characteristics of Indium Tin Oxide Thin Film Transistors.
We have investigated the effects of adding (Ta) ions to InSnO thin films by co-sputtering on the performance of InSnO thin film transistors (TFTs). TaInSnO TFTs exhibited significantly lower off currents and higher on/off current ratios. Ta ions, owing to their strong affinity to oxygen suppress the formation of free electron carriers in thin films; and hence, play an important role in enhancing the electrical characteristics of the TFTs. The optimized TaInSnO TFTs showed high on/off ratios and low subthreshold swings.
Si-Nae
SN
Park
Dae-Ho
DH
Son
Shi-Joon
SJ
Sung
Jin-Kyu
JK
Kang
Dae-Hwan
DH
Kim