Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications.
Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9-1.1 spectral interval. Use of QWD media in a GaAs solar cell resulted in a photocurrent increment of 3.7 mA cm(-2) for the terrestrial spectrum and by 4.1 mA cm(-2) for the space spectrum. Diode lasers based on QWD emitting around 1.1 μm revealed high saturated gain and low transparency current density of about 15 cm(-1) and 37 A cm(-2) per layer, respectively.
Ioffe Physical-Techical Institute, 26 Politekhnicheskay, St Petersburg 194021, Russia. St Petersburg Academic University, 8/3 Kholpina Str, St Petersburg 194021, Russia. Solar Dots Ltd, 26 Politekhnicheskay, St Petersburg 194021, Russia.
S A
SA
Mintairov
N A
NA
Kalyuzhnyy
V M
VM
Lantratov
M V
MV
Maximov
A M
AM
Nadtochiy
Sergei
S
Rouvimov
A E
AE
Zhukov