Domain evolution with electric field and delineation of extrinsic contributions in (K, Na, Li)(Nb, Ta, Sb)O3single crystal.
Extrinsic contributions play an important role in the functionalities of ferroelectric materials, while domain structure evolution is crucial for understanding the extrinsic dielectric and piezoelectric responses. In this work, domain configuration changes with an electric field applied along [001]Cin the tetragonal (K, Na, Li)(Nb, Sb, Ta)O3single crystal were studied by means of polarizing light microscopy. Results show that parts of the spontaneous polarizations in the (001)Cplane are switched to [001]Cdirection, while others still stay in the (001)Cplane due to high induced internal stresses. Single domain state cannot be achieved even under a high electric field. After being poled along [001]C, the volume fraction of domains with polarzations in the (001)Cplane is still about 25.2%. The extrinsic contributions to the dielectric constant are 15.7% and 27.2% under theEfield of 1 kV/cm and under 2 kV/cm, respectively, estimated by the Rayleigh analysis.
Department of Physics, Condensed Matter Science and Technology Institute, Harbin Institute of Technology , Harbin 150080, China.
Junjun
J
Wang
Department of Physics, Condensed Matter Science and Technology Institute, Harbin Institute of Technology , Harbin 150080, China.
Limei
L
Zheng
Department of Physics, Condensed Matter Science and Technology Institute, Harbin Institute of Technology , Harbin 150080, China.
Bin
B
Yang
Department of Materials Science and Engineering, University of Science and Technology of China , Hefei 230026, China.
Zhenlin
Z
Luo
School of Civil Engineering, Harbin Institute of Technology , Harbin 150001, China.
Xiaoyan
X
Lu
Center for High Pressure Science and Technology Advanced Research , Shanghai 201203, China.
Gang
G
Liu
Department of Physics, Condensed Matter Science and Technology Institute, Harbin Institute of Technology , Harbin 150080, China.
Rui
R
Zhang
Department of Physics, Condensed Matter Science and Technology Institute, Harbin Institute of Technology , Harbin 150080, China.
Tianquan
T
Lv
Wenwu
W
Cao