Power Dissipation and Electrical Breakdown in Black Phosphorus.
We report operating temperatures and heating coefficients measured in a multilayer black phosphorus device as a function of injected electrical power. By combining micro-Raman spectroscopy and electrical transport measurements, we have observed a linear temperature increase up to 600 K at a power dissipation rate of 0.896 K μm(3)/mW. By further increasing the bias voltage, we determined the threshold power and temperature for electrical breakdown and analyzed the fracture in the black phosphorus layer that caused the device failure by means of scanning electron microscopy and atomic force microscopy. The results will benefit the research and development of electronics and optoelectronics based on novel two-dimensional materials.
IBM Research, Yorktown Heights, New York 10598, United States.
Michael
M
Engel
IBM Research, Yorktown Heights, New York 10598, United States.|IBM Research, Rio de Janeiro, RJ 22290-240, Brazil.
Mathias
M
Steiner
IBM Research, Yorktown Heights, New York 10598, United States.
Shu-Jen
SJ
Han
IBM Research, Yorktown Heights, New York 10598, United States.
Phaedon
P
Avouris
Black phosphorus; nanoelectronics; optical spectroscopy; power dissipation