Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction.
The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, we present here an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect. Our proof-of-principle devices show multifunctional properties with diode rectifying factors of up to 10(4), while under light exposure they exhibit photoresponse with a measured external quantum efficiency of ∼11%. As for their photovoltaic properties, we found open circuit voltages of up to 0.6 V and optical-to-electrical power conversion efficiency of 0.7%. The extended catalogue of known organic semiconductors and two-dimensional materials offer the prospect for tailoring the properties and the performance of the resulting devices, making organic-2D p-n junctions promising candidates for future technological applications.
CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country, Spain.
Saül
S
Vélez
David
D
Ciudad
Joshua
J
Island
Michele
M
Buscema
Oihana
O
Txoperena
Subir
S
Parui
Gary A
GA
Steele
Fèlix
F
Casanova
Herre S J
HS
van der Zant
Andres
A
Castellanos-Gomez
Luis E
LE
Hueso