Semi-Transparent ZnO-CuI/CuSCN Photodiode Detector with Narrow-Band UV Photoresponse.
The ZnO homogeneous pn junction photodiode is quite difficult to fabricate due to the absence of stable p-type ZnO. So exploring reliable p-type materials is necessary to build a heterogeneous pn junction with n-type ZnO. Herein, we develop a simple and low-cost solution-processed method to obtain inorganic p-type CuI/CuSCN composite film with compact morphology, high conductivity, and low surface state. The improved performance of CuI/CuSCN composite film can be confirmed based on high-rectification ratio, responsivity, and open voltage of ZnO-CuI/CuSCN photodiode UV detectors. Moreover, photodiodes with novel top electrodes are investigated. Compared with commonly used Au and graphene/Ag nanowire (NWs) electrode, poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (
PSS) electrode prepared by Meyer rod-coating technique opens one route to obtain a semitransparent photodiode. The photodiode with
PSS as the top electrode under reverse illumination has the highest photocurrent density due to higher UV transmittance of
PSS transparent electrode compared with ITO glass. The low-energy consumption, and high responsivity, UV to visible rejection ratio and air stability make this ZnO-CuI/CuSCN photodiode quite promising in the UV-A detection field.
Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry; International Center for Dielectric Research (ICDR), Xi'an Jiaotong University , Xi'an 710049, China.
Zhi
Z
Yang
Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry; International Center for Dielectric Research (ICDR), Xi'an Jiaotong University , Xi'an 710049, China.
Minqiang
M
Wang
Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry; International Center for Dielectric Research (ICDR), Xi'an Jiaotong University , Xi'an 710049, China.
Jijun
J
Ding
Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry; International Center for Dielectric Research (ICDR), Xi'an Jiaotong University , Xi'an 710049, China.
Zhongwang
Z
Sun
Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry; International Center for Dielectric Research (ICDR), Xi'an Jiaotong University , Xi'an 710049, China.
Le
L
Li
Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry; International Center for Dielectric Research (ICDR), Xi'an Jiaotong University , Xi'an 710049, China.
Jin
J
Huang
Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry; International Center for Dielectric Research (ICDR), Xi'an Jiaotong University , Xi'an 710049, China.
Jing
J
Liu
State Key Laboratory of Manufacturing Systems Engineering, Xi'an Jiaotong University , Xi'an 710049, China.
Jinyou
J
Shao
PEDOT:PSS electrode; ZnO UV detectors; inorganic p-type films; photodiode; semitransparent