Quantum Hall resistance standard in graphene devices under relaxed experimental conditions.
The quantum Hall effect provides a universal standard for electrical resistance that is theoretically based on only the Planck constant h and the electron charge e. Currently, this standard is implemented in GaAs/AlGaAs, but graphene's electronic properties have given hope for a more practical device. Here, we demonstrate that the experimental conditions necessary for the operation of devices made of high-quality graphene grown by chemical vapour deposition on silicon carbide can be extended and significantly relaxed compared with those for state-of-the-art GaAs/AlGaAs devices. In particular, the Hall resistance can be accurately quantized to within 1 × 10(-9) over a 10 T wide range of magnetic flux density, down to 3.5 T, at a temperature of up to 10 K or with a current of up to 0.5 mA. This experimental simplification highlights the great potential of graphene in the development of user-friendly and versatile quantum standards that are compatible with broader industrial uses beyond those in national metrology institutes. Furthermore, the measured agreement of the quantized Hall resistance in graphene and GaAs/AlGaAs, with an ultimate uncertainty of 8.2 × 10(-11), supports the universality of the quantum Hall effect. This also provides evidence of the relation of the quantized Hall resistance with h and e, which is crucial for the new Système International d'unités to be based on fixing such fundamental constants of nature.
LNE - Laboratoire National de Métrologie et d'Essais, 29 avenue Roger Hennequin, Trappes 78197, France.
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http://orcid.org/0000-0001-6169-3128
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Ribeiro-Palau
LNE - Laboratoire National de Métrologie et d'Essais, 29 avenue Roger Hennequin, Trappes 78197, France.
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Lafont
LNE - Laboratoire National de Métrologie et d'Essais, 29 avenue Roger Hennequin, Trappes 78197, France.
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Brun-Picard
LPN - Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, Marcoussis 91460, France.
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Kazazis
CRHEA - Centre de Recherche sur l'Hétéroépitaxie et ses Applications, CNRS, Rue Bernard Grégory, Valbonne 06560, France.
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Michon
Aix Marseille Université, CNRS, CINaM UMR 7325, 13288 Marseille, France.
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Cheynis
L2C - Laboratoire Charles Coulomb, CNRS-Université de Montpellier, Place Eugène Bataillon, Montpellier 34095, France.
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Couturaud
L2C - Laboratoire Charles Coulomb, CNRS-Université de Montpellier, Place Eugène Bataillon, Montpellier 34095, France.
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Consejo
L2C - Laboratoire Charles Coulomb, CNRS-Université de Montpellier, Place Eugène Bataillon, Montpellier 34095, France.
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Jouault
LNE - Laboratoire National de Métrologie et d'Essais, 29 avenue Roger Hennequin, Trappes 78197, France.
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Poirier
LNE - Laboratoire National de Métrologie et d'Essais, 29 avenue Roger Hennequin, Trappes 78197, France.
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Schopfer