Resistive Switching Behavior in Organic-Inorganic Hybrid CH3 NH3 PbI3-x Clx Perovskite for Resistive Random Access Memory Devices.
The CH3 NH3 PbI3- x Clx organic-inorganic hybrid perovskite material demonstrates remarkable resistive switching behavior, which can be applicable in resistive random access memory devices. The simply designed Au/CH3 NH3 PbI3- x Clx /FTO structure is fabricated by a low-temperature, solution-processable method, which exhibits remarkable bipolar resistive switching and nonvolatile properties.
Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 143-747, South Korea.|Nanomaterials Centre, School of Chemical Engineering and AIBN, The University of Queensland, St Lucia, Brisbane, QLD, 4072, Australia.
Eun Ji
EJ
Yoo
Nanomaterials Centre, School of Chemical Engineering and AIBN, The University of Queensland, St Lucia, Brisbane, QLD, 4072, Australia.
Miaoqiang
M
Lyu
Nanomaterials Centre, School of Chemical Engineering and AIBN, The University of Queensland, St Lucia, Brisbane, QLD, 4072, Australia.
Jung-Ho
JH
Yun
Department of Physics, Myong Ji University, Yongin-si, 449-728, South Korea.
Chi Jung
CJ
Kang
Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 143-747, South Korea.
Young Jin
YJ
Choi
Nanomaterials Centre, School of Chemical Engineering and AIBN, The University of Queensland, St Lucia, Brisbane, QLD, 4072, Australia.
Lianzhou
L
Wang
nonvolatile memory; organic-inorganic hybrid perovskites; resistive switching