Ultrasensitive Thin-Film-Based Alx Ga1-x N Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential.
Alx Ga1-x N thin-film-based piezotronic strain sensors with ultrahigh strain sensitivity are fabricated through alloying of AlN with GaN. The strain sensitivity of the ternary compound Alx Ga1-x N is higher than those of the individual binary compounds GaN and AlN. Such a high performance can be attributed to the piezoelectric constant enhancement via intercalation of Al atoms into the GaN matrix, the effect of residual strain, and a suppressed screening effect.
Department of Materials Science and Engineering, National Cheng Kung University, Tainan City, 70101, Taiwan.
Chao-Hung
CH
Wang
Department of Optics and Photonics, National Central University, Jhongli City, Taoyuan County, 32001, Taiwan.
Kun-Yu
KY
Lai
Department of Materials Science and Engineering, National Cheng Kung University, Tainan City, 70101, Taiwan.
Yi-Chang
YC
Li
Department of Materials Science and Engineering, National Cheng Kung University, Tainan City, 70101, Taiwan.
Yen-Chih
YC
Chen
Department of Materials Science and Engineering, National Cheng Kung University, Tainan City, 70101, Taiwan.|Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan City, 70101, Taiwan.
Chuan-Pu
CP
Liu
alloying; changes of Schottky barrier height; piezotronic strain sensors; strain sensitivity