Bridging the Gap between the Nanometer-Scale Bottom-Up and Micrometer-Scale Top-Down Approaches for Site-Defined InP/InAs Nanowires.
This work presents a method that bridges the gap between the nanometer-scale bottom-up and micrometer-scale top-down approaches for site-defined nanostructures, which has long been a significant challenge for applications that require low-cost and high-throughput manufacturing processes. We realized the bridging by controlling the seed indium nanoparticle position through a self-assembly process. Site-defined InP nanowires were then grown from the indium-nanoparticle array in the vapor-liquid-solid mode through a "seed and grow" process. The nanometer-scale indium particles do not always occupy the same locations within the micrometer-scale open window of an InP exposed substrate due to the scale difference. We developed a technique for aligning the nanometer-scale indium particles on the same side of the micrometer-scale window by structuring the surface of a misoriented InP (111)B substrate. Finally, we demonstrated that the developed method can be used to grow a uniform InP/InAs axial-heterostructure nanowire array. The ability to form a heterostructure nanowire array with this method makes it possible to tune the emission wavelength over a wide range by employing the quantum confinement effect and thus expand the application of this technology to optoelectronic devices. Successfully pairing a controllable bottom-up growth technique with a top-down substrate preparation technique greatly improves the potential for the mass-production and widespread adoption of this technology.
NTT Basic Research Laboratories, NTT Corporation , 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.|NTT Nanophotonics Center, NTT Corporation , 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
Guoqiang
G
Zhang
NTT Basic Research Laboratories, NTT Corporation , 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
Christophe
C
Rainville
NTT Basic Research Laboratories, NTT Corporation , 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
Adrian
A
Salmon
NTT Basic Research Laboratories, NTT Corporation , 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.|NTT Nanophotonics Center, NTT Corporation , 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
Masato
M
Takiguchi
NTT Basic Research Laboratories, NTT Corporation , 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.|NTT Nanophotonics Center, NTT Corporation , 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
Kouta
K
Tateno
NTT Basic Research Laboratories, NTT Corporation , 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
Hideki
H
Gotoh
InAs; InP; bottom-up; heterostructure; nanowire; photolithography; self-assembly; semiconductor