Manganese Doping of Monolayer MoS2: The Substrate Is Critical.
Substitutional doping of transition metal dichalcogenides (TMDs) may provide routes to achieving tunable p-n junctions, bandgaps, chemical sensitivity, and magnetism in these materials. In this study, we demonstrate in situ doping of monolayer molybdenum disulfide (MoS2) with manganese (Mn) via vapor phase deposition techniques. Successful incorporation of Mn in MoS2 leads to modifications of the band structure as evidenced by photoluminescence and X-ray photoelectron spectroscopy, but this is heavily dependent on the choice of substrate. We show that inert substrates (i.e., graphene) permit the incorporation of several percent Mn in MoS2, while substrates with reactive surface terminations (i.e., SiO2 and sapphire) preclude Mn incorporation and merely lead to defective MoS2. The results presented here demonstrate that tailoring the substrate surface could be the most significant factor in substitutional doping of TMDs with non-TMD elements.
Kehao
K
Zhang
Simin
S
Feng
Junjie
J
Wang
Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States.
Angelica
A
Azcatl
Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States.
Ning
N
Lu
Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States.
Rafik
R
Addou
Nan
N
Wang
Chanjing
C
Zhou
Materials Characterization Laboratory, The Pennsylvania State University , University Park, Pennsylvania 16802, United States.
Jordan
J
Lerach
Materials Characterization Laboratory, The Pennsylvania State University , University Park, Pennsylvania 16802, United States.
Vincent
V
Bojan
Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States.
Moon J
MJ
Kim
Long-Qing
LQ
Chen
Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States.
Robert M
RM
Wallace
Mauricio
M
Terrones
Jun
J
Zhu
Joshua A
JA
Robinson
Transition metal dichalcogenide; in situ doping; manganese; molybdenum disulfide; two-dimensional heterostructure