Investigation of Antifouling Properties of Surfaces Featuring Zwitterionic α-Aminophosphonic Acid Moieties.
Zwitterionic thin films containing α-amino phosphonic acid moieties were successfully introduced on silicon surfaces and their antifouling properties were investigated. Initially, the substrates were modified with a hybrid polymer, composed of poly(methylsilsesquioxane) (PMSSQ) and poly(4-vinyl benzaldehyde) (PStCHO). Next, a Kabachnik-Fields post-polymerization modification (sur-KF-PMR) of the functionalized aldehyde surfaces was conducted with different amines and dialkyl phosphonates. After subsequent deprotection reaction of dialkyl phosphonates, the obtained zwitterionic surfaces were characterized by various techniques and we found excellent antifouling properties of the resulting films.
Institute for Technical and Macromolecular Chemistry, University of Hamburg, Bundesstr. 45, D-20146, Hamburg, Germany.
Natalie
N
Wagner
Institute of Biochemistry, Pharmaceutical Biology and Microbiology, University of Hamburg, Bundesstr. 45, D-20146, Hamburg, Germany.
Phyllis
P
Zimmermann
Institute of Biochemistry, Pharmaceutical Biology and Microbiology, University of Hamburg, Bundesstr. 45, D-20146, Hamburg, Germany.
Peter
P
Heisig
Institute of Pharmacy, University of Hamburg, Bundesstr. 45, D-20146, Hamburg, Germany.
Franziska
F
Klitsche
Institute of Pharmacy, University of Hamburg, Bundesstr. 45, D-20146, Hamburg, Germany.
Wolfgang
W
Maison
Institute for Technical and Macromolecular Chemistry, University of Hamburg, Bundesstr. 45, D-20146, Hamburg, Germany. theato@chemie.uni-hamburg.de.
Patrick
P
Theato
D017646:Organosilicon Compounds / Q000737:chemistry*; D010757:Phosphorous Acids / Q000737:chemistry*; D011108:Polymers / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D013212:Staphylococcus epidermidis / Q000254:growth & development*
D017646:Organosilicon Compounds; D010757:Phosphorous Acids; D011108:Polymers; C532869:polymethylsilsesquioxane; D012825:Silicon
antifouling properties; zwitterionic thin film