A Vanadium Dioxide Metamaterial Disengaged from Insulator-to-Metal Transition.
We report that vanadium dioxide films patterned with λ/100000 nanogaps exhibit an anomalous transition behavior at millimeter wavelengths. Most of the hybrid structure's switching actions occur well below the insulator to metal transition temperature, starting from 25 °C, so that the hysteresis curves completely separate themselves from their bare film counterparts. It is found that thermally excited intrinsic carriers are responsible for this behavior by introducing enough loss in the context of the radically modified electromagnetic environment in the vicinity of the nanogaps. This phenomenon newly extends the versatility of insulator to metal transition devices to encompass their semiconductor properties.
Department of Physics and Astronomy and Center for Atom Scale Electromagnetism, Seoul National University , Seoul 151-747, Republic of Korea.
Young-Gyun
YG
Jeong
Photonic Systems Laboratory, School of EECS, Seoul National University , Seoul 151-744, Republic of Korea.
Sanghoon
S
Han
Department of Physics and Astronomy and Center for Atom Scale Electromagnetism, Seoul National University , Seoul 151-747, Republic of Korea.
Jiyeah
J
Rhie
Department of Physics and Astronomy and Center for Atom Scale Electromagnetism, Seoul National University , Seoul 151-747, Republic of Korea.
Ji-Soo
JS
Kyoung
Department of Physics and Astronomy and Center for Atom Scale Electromagnetism, Seoul National University , Seoul 151-747, Republic of Korea.
Jae-Wook
JW
Choi
Photonic Systems Laboratory, School of EECS, Seoul National University , Seoul 151-744, Republic of Korea.
Namkyoo
N
Park
Department of Physics and Astronomy, Department of Biophysics and Chemical Biology, and Institute of Applied Physics, Seoul National University , Seoul 151-747, Republic of Korea.
Seunghun
S
Hong
Creative Research Center of Metal-Insulator Transition, Electronics and Telecommunications Research Institute , Daejeon 305-700, Republic of Korea.
Bong-Jun
BJ
Kim
Creative Research Center of Metal-Insulator Transition, Electronics and Telecommunications Research Institute , Daejeon 305-700, Republic of Korea.|School of Advanced Device Technology, University of Science and Technology , Daejeon 305-333, Republic of Korea.
Hyun-Tak
HT
Kim
Department of Physics and Astronomy and Center for Atom Scale Electromagnetism, Seoul National University , Seoul 151-747, Republic of Korea.
Dai-Sik
DS
Kim
Boltzmann tail; Vanadium dioxide; insulator to metal transition; lithography; nano antenna; nanogap; terahertz spectroscopy; transition device