title: High Stability Pentacene Transistors Using Polymeric Dielectric Surface Modifier.
abstract: 1,6-bis(trichlorosilyl)hexane (C6Cl), polystyrene (PS), and cross-linked polystyrene (CPS) were investigated as gate dielectric modified layers for high performance organic transistors. The influence of the surface energy, roughness and morphology on the charge transport of the organic thin-film transistors (OTFTs) was investigated. The surface energy and roughness both affect the grain size of the pentacene films which will control the charge carrier mobility of the devices. Pentacene thin-film transistors fabricated on the CPS modified dielectric layers exhibited charge carrier mobility as high as 1.11 cm2 V-1 s-1. The bias stress stability for the CPS devices shows that the drain current only decays 1% after 1530 s and the mobility never decreases until 13530 s.
authors.forename: Xiaohong
authors.initials: X
authors.lastname: Wang
authors.forename: Guangqing
authors.initials: G
authors.lastname: Lin
authors.forename: Peng
authors.initials: P
authors.lastname: Li
authors.forename: Guoqiang
authors.initials: G
authors.lastname: Lv
authors.forename: Longzhen
authors.initials: L
authors.lastname: Qiu
authors.forename: Yunsheng
authors.initials: Y
authors.lastname: Ding
mesh_terms: D003432:Cross-Linking Reagents / Q000737:chemistry; D017097:Electric Impedance; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008839:Microelectrodes; D053758:Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure; D009279:Naphthacenes / Q000737:chemistry*; D010316:Particle Size; D011137:Polystyrenes / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D003432:Cross-Linking Reagents; D009279:Naphthacenes; D011137:Polystyrenes; C523499:pentacene