title: Fabrication Characteristics of Silicon Nanowires via the Electrochemical Electroless Etching Method.
abstract: A silicon nanowire structure was fabricated using the electrochemical electroless etching method, involving electroless plating and the electrochemical etching process. The reflection of the absorption layer with the nanowires' structure was about 5%, which is better than a bulk-type solar cell (10%).
authors.forename: ByeongSu
authors.initials: B
authors.lastname: Kang
authors.forename: Chae Hwan
authors.initials: CH
authors.lastname: Jeong
authors.forename: Changheon
authors.initials: C
authors.lastname: Kim
authors.forename: Min-Young
authors.initials: MY
authors.lastname: Kim
authors.forename: Bum Ho
authors.initials: BH
authors.lastname: Choi
authors.forename: Moo Sung
authors.initials: MS
authors.lastname: Lee
authors.forename: Ho-Sung
authors.initials: HS
authors.lastname: Kim