title: Creating New VLS Silicon Nanowire Contact Geometries by Controlling Catalyst Migration.
abstract: The formation of self-assembled contacts between vapor-liquid-solid grown silicon nanowires and flat silicon surfaces was imaged in situ using electron microscopy. By measuring the structural evolution of the contact formation process, we demonstrate how different contact geometries are created by adjusting the balance between silicon deposition and Au migration. We show that electromigration provides an efficient way of controlling the contact. The results point to novel device geometries achieved by direct nanowire growth on devices.
authors.affiliation: Department of Micro- and Nanotechnology, Technical University of Denmark , DK-2800 Kgs. Lyngby, Denmark.
authors.forename: Sardar B
authors.initials: SB
authors.lastname: Alam
authors.affiliation: Department of Engineering, University of Cambridge , Cambridge CB2 1TN, United Kingdom.|IBM T.J. Watson Research Center , Yorktown Heights, New York 10598, United States.
authors.forename: Federico
authors.initials: F
authors.lastname: Panciera
authors.affiliation: Department of Micro- and Nanotechnology, Technical University of Denmark , DK-2800 Kgs. Lyngby, Denmark.|Center for Individual Nanoparticle Functionality, Technical University of Denmark , DK-2800 Kgs. Lyngby, Denmark.
authors.forename: Ole
authors.initials: O
authors.lastname: Hansen
authors.affiliation: Department of Micro- and Nanotechnology, Technical University of Denmark , DK-2800 Kgs. Lyngby, Denmark.
authors.forename: Kristian
authors.initials: K
authors.lastname: Mølhave
authors.affiliation: IBM T.J. Watson Research Center , Yorktown Heights, New York 10598, United States.
authors.forename: Frances M
authors.initials: FM
authors.lastname: Ross
keywords: CVD; Nanowire integration; Si nanowire growth; TEM; cantilever; in situ manipulation