title: Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure.
abstract: Diode-like volatile resistive switching as well as nonvolatile resistive switching behaviors in a Cu/ZrO₂/TiO₂/Ti stack are investigated. Depending on the current compliance during the electroforming process, either volatile resistive switching or nonvolatile resistive switching is observed. With a lower current compliance (<10 μA), the Cu/ZrO₂/TiO₂/Ti device exhibits diode-like volatile resistive switching with a rectifying ratio over 10(6). The permanent transition from volatile to nonvolatile resistive switching can be obtained by applying a higher current compliance of 100 μA. Furthermore, by using different reset voltages, the Cu/ZrO₂/TiO₂/Ti device exhibits multilevel memory characteristics with high uniformity. The coexistence of nonvolatile multilevel memory and diode-like volatile resistive switching behaviors in the same Cu/ZrO₂/TiO₂/Ti device opens areas of applications in high-density storage, logic circuits, neural networks, and passive crossbar memory selectors.
authors.affiliation: Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, People's Republic of China. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China.
authors.forename: Yingtao
authors.initials: Y
authors.lastname: Li
authors.forename: Peng
authors.initials: P
authors.lastname: Yuan
authors.forename: Liping
authors.initials: L
authors.lastname: Fu
authors.forename: Rongrong
authors.initials: R
authors.lastname: Li
authors.forename: Xiaoping
authors.initials: X
authors.lastname: Gao
authors.forename: Chunlan
authors.initials: C
authors.lastname: Tao
mesh_terms: D003300:Copper / Q000737:chemistry; D017097:Electric Impedance; D004563:Electrochemistry; D004566:Electrodes; D036103:Nanotechnology; D014025:Titanium / Q000737:chemistry*; D015040:Zirconium / Q000737:chemistry*
chemical_list: C009495:titanium dioxide; D003300:Copper; D015040:Zirconium; D014025:Titanium; C028541:zirconium oxide