title: Chemical Visualization of a GaN p-n junction by XPS.
abstract: We report on an operando XPS investigation of a GaN diode, by recording the Ga2p3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation enables probing photoresponse of the device.
authors.affiliation: Nanotechnology Research Center, Department of Electrical and Electronics Engineering and Department of Physics, Bilkent University, 06800, Ankara, Turkey.
authors.forename: Deniz
authors.initials: D
authors.lastname: Caliskan
authors.affiliation: Department of Chemistry, Bilkent University, 06800 Ankara, Turkey.
authors.forename: Hikmet
authors.initials: H
authors.lastname: Sezen
authors.affiliation: Nanotechnology Research Center, Department of Electrical and Electronics Engineering and Department of Physics, Bilkent University, 06800, Ankara, Turkey.
authors.forename: Ekmel
authors.initials: E
authors.lastname: Ozbay
authors.affiliation: Department of Chemistry, Bilkent University, 06800 Ankara, Turkey.
authors.forename: Sefik
authors.initials: S
authors.lastname: Suzer