title: Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor.
abstract: Owing to the scattering and trapping effects, the interfaces of dielectric/graphene or substrate/graphene can tailor the performance of field-effect transistor (FET). In this letter, the polymer of benzocyclobutene (BCB) was used as an amphibious buffer layer and located at between the layers of substrate and graphene and between the layers of dielectric and graphene. Interestingly, with the help of nonpolar and hydrophobic BCB buffer layer, the large-scale top-gated, chemical vapor deposited (CVD) graphene transistors was prepared on Si/SiO2 substrate, its cutoff frequency (fT) and the maximum cutoff frequency (fmax) of the graphene field-effect transistor (GFET) can be reached at 12 GHz and 11 GHz, respectively.
authors.forename: Yun
authors.initials: Y
authors.lastname: Wu
authors.forename: Jianjun
authors.initials: J
authors.lastname: Zou
authors.forename: Shuai
authors.initials: S
authors.lastname: Huo
authors.forename: Haiyan
authors.initials: H
authors.lastname: Lu
authors.forename: Yuecan
authors.initials: Y
authors.lastname: Kong
authors.forename: Tangshen
authors.initials: T
authors.lastname: Chen
authors.forename: Wei
authors.initials: W
authors.lastname: Wu
authors.forename: Jingxia
authors.initials: J
authors.lastname: Xu
mesh_terms: D000327:Adsorption; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006108:Graphite / Q000737:chemistry*; D053758:Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation; D011083:Polycyclic Compounds / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D011083:Polycyclic Compounds; C079040:benzocyclobutene; D006108:Graphite