title: Ferroelectric Tunnel Junction for Dense Cross-Point Arrays.
abstract: Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memristor has restrictions to minimize the operating current level due to their resistive switching mechanism. This study demonstrates suitable characteristics of a ferroelectric tunnel junction (FTJ) for the memristor of the CPA structure using an electrostatic model. From the FTJ of the Au/p-type Pr0.98Ca0.02MnO3 (4 nm)/BaTiO3 (4.3 nm)/n-type Ca0.98Pr0.02MnO3 (3 nm)/Pt(111) structure, which has a higher and thicker potential barrier, a good memristive effect for the CPA structure with a high nonlinear current-voltage curve and low current operation, was obtained by Δ Fowler-Nordheim tunneling with effectively blocked direct tunneling and thermionic emission. The FTJ demonstrated reduced sneak current and the possible for high nonlinearity.
authors.affiliation: Department of Materials Science and Engineering, Yonsei University , Seodaemun-Ku, Seoul 120-749, Korea.
authors.forename: Hong-Sub
authors.initials: HS
authors.lastname: Lee
authors.affiliation: Department of Materials Science and Engineering, Yonsei University , Seodaemun-Ku, Seoul 120-749, Korea.
authors.forename: Wooje
authors.initials: W
authors.lastname: Han
authors.affiliation: Department of Materials Science and Engineering, Yonsei University , Seodaemun-Ku, Seoul 120-749, Korea.
authors.forename: Hee-Yoon
authors.initials: HY
authors.lastname: Chung
authors.affiliation: Laboratoire de Physique des Solides, CNRS-UMR 8502 Université Paris-Sud , Orsay 91405, France.|IFIBA-Conicet and Departamento de Física, FCEN, Universidad de Buenos Aires, Ciudad Universitaria Pabellón I , (1428) Buenos Aires, Argentina.
authors.forename: Marcelo
authors.initials: M
authors.lastname: Rozenberg
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 689-798, Korea.
authors.forename: Kangsik
authors.initials: K
authors.lastname: Kim
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 689-798, Korea.
authors.forename: Zonghoon
authors.initials: Z
authors.lastname: Lee
authors.affiliation: Department of Advanced Materials Science and Engineering and SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University , Suwon, Kyunggi-do 440-746, Republic of Korea.
authors.forename: Geun Young
authors.initials: GY
authors.lastname: Yeom
authors.affiliation: Department of Materials Science and Engineering, Yonsei University , Seodaemun-Ku, Seoul 120-749, Korea.
authors.forename: Hyung-Ho
authors.initials: HH
authors.lastname: Park
keywords: cross point array structure; ferroelectric tunnel junction; memristor; perovskite manganite family; sneak current