title: Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer.
abstract: Two-dimensional van der Waals (2D vdWs) materials are a class of new materials that can provide important resources for future electronics and materials sciences due to their unique physical properties. Among 2D vdWs materials, black phosphorus (BP) has exhibited significant potential for use in electronic and optoelectronic applications because of its allotropic properties, high mobility, and direct and narrow band gap. Here, we demonstrate a few-layered BP-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. Experiments showed that our BP-based ferroelectric transistors operate satisfactorily at room temperature in ambient air and exhibit a clear memory window. Unlike conventional ambipolar BP transistors, our ferroelectric transistors showed only p-type characteristics due to the carbon-fluorine (C-F) dipole effect of the P(VDF-TrFE) layer, as well as the highest linear mobility value of 1159 cm(2) V(-1) s(-1) with a 10(3) on/off current ratio. For more advanced memory applications beyond unit memory devices, we implemented two memory inverter circuits, a resistive-load inverter circuit and a complementary inverter circuit, combined with an n-type molybdenum disulfide (MoS2) nanosheet. Our memory inverter circuits displayed a clear memory window of 15 V and memory output voltage efficiency of 95%.
authors.affiliation: Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST) , Seoul 136-791, Korea.
authors.forename: Young Tack
authors.initials: YT
authors.lastname: Lee
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
authors.forename: Hyeokjae
authors.initials: H
authors.lastname: Kwon
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
authors.forename: Jin Sung
authors.initials: JS
authors.lastname: Kim
authors.affiliation: Materials and Life Science Research Division, Korea Institute of Science and Technology (KIST) , Seoul 136-791, Korea.
authors.forename: Hong-Hee
authors.initials: HH
authors.lastname: Kim
authors.affiliation: Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST) , Seoul 136-791, Korea.
authors.forename: Yun Jae
authors.initials: YJ
authors.lastname: Lee
authors.affiliation: Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST) , Seoul 136-791, Korea.
authors.forename: Jung Ah
authors.initials: JA
authors.lastname: Lim
authors.affiliation: Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST) , Seoul 136-791, Korea.
authors.forename: Yong-Won
authors.initials: YW
authors.lastname: Song
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
authors.forename: Yeonjin
authors.initials: Y
authors.lastname: Yi
authors.affiliation: Materials and Life Science Research Division, Korea Institute of Science and Technology (KIST) , Seoul 136-791, Korea.|Department of Nanomaterials and Nano Science, Korea University of Science and Technology (KUST) , Daejun 305-350, Korea.
authors.forename: Won-Kook
authors.initials: WK
authors.lastname: Choi
authors.affiliation: Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST) , Seoul 136-791, Korea.|Department of Nanomaterials and Nano Science, Korea University of Science and Technology (KUST) , Daejun 305-350, Korea.
authors.forename: Do Kyung
authors.initials: DK
authors.lastname: Hwang
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
authors.forename: Seongil
authors.initials: S
authors.lastname: Im
keywords: 2D nanosheet transistor; MoS2; P(VDF-TrFE); black phosphorus (BP); dual-gate transistor; ferroelectric memory CMOS