title: Grain Size and Interface Dependence of Bias Stress Stability of n-Type Organic Field Effect Transistors.
abstract: The effect of grain size and interface dependence of bias stress stability of C60-based n-type organic field effect transistors (OFETs) has been studied. It has been realized that, with increasing grain size of C60, the bias stress induced threshold voltage shift can be controlled and this effect is mainly attributed to the mechanism of charge trapping at grain boundaries. It is further studied that the growth of C60 on the surface of parylene at elevated substrate temperature leads to the creation of radicals at the interface between the active layer and the gate dielectric. These radicals help to improve the bias stress stability of C60-based n-type OFETs. For achieving the bias stress stability, we have presented a procedure of creation of radicals at the interface between C60 and parylene in single gate OFETs instead of dual gate OFETs.
authors.affiliation: Institute of Semiconductor and Solid State Physics, Johannes Kepler University , A-4040 Linz, Austria.|National Centre for Physics , Quaid-e-Azam University Campus, 440000 Islamabad, Pakistan.
authors.forename: Rizwan
authors.initials: R
authors.lastname: Ahmed
authors.affiliation: Institute of Semiconductor and Solid State Physics, Johannes Kepler University , A-4040 Linz, Austria.|Institute of Solid State Physics, University of Bremen , D-28359 Bremen, Germany.
authors.forename: Clemens
authors.initials: C
authors.lastname: Simbrunner
authors.affiliation: National Centre for Physics , Quaid-e-Azam University Campus, 440000 Islamabad, Pakistan.
authors.forename: M A
authors.initials: MA
authors.lastname: Baig
authors.affiliation: Institute of Semiconductor and Solid State Physics, Johannes Kepler University , A-4040 Linz, Austria.
authors.forename: H
authors.initials: H
authors.lastname: Sitter
keywords: C60; bias stress; charge trapping in semiconductor and dielectric interface; grain boundaries; n-type OFETs stability; parylene; threshold voltage shift