title: Carrier density distribution in silicon nanowires investigated by scanning thermal microscopy and Kelvin probe force microscopy.
abstract: The use of scanning thermal microscopy (SThM) and Kelvin probe force microscopy (KPFM) to investigate silicon nanowires (SiNWs) is presented. SThM allows imaging of temperature distribution at the nanoscale, while KPFM images the potential distribution with AFM-related ultra-high spatial resolution. Both techniques are therefore suitable for imaging the resistance distribution. We show results of experimental examination of dual channel n-type SiNWs with channel width of 100 nm, while the channel was open and current was flowing through the SiNW. To investigate the carrier distribution in the SiNWs we performed SThM and KPFM scans. The SThM results showed non-symmetrical temperature distribution along the SiNWs with temperature maximum shifted towards the contact of higher potential. These results corresponded to those expressed by the distribution of potential gradient along the SiNWs, obtained using the KPFM method. Consequently, non-uniform distribution of resistance was shown, being a result of non-uniform carrier density distribution in the structure and showing the pinch-off effect. Last but not least, the results were also compared with results of finite-element method modeling.
authors.affiliation: Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland. Electronic address: Grzegorz.Wielgoszewski@pwr.edu.pl.
authors.forename: Grzegorz
authors.initials: G
authors.lastname: Wielgoszewski
authors.affiliation: Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland. Electronic address: Piotr.Paletko@pwr.edu.pl.
authors.forename: Piotr
authors.initials: P
authors.lastname: Pałetko
authors.affiliation: Instytut Technologii Elektronowej - ITE Warsaw, Division of Silicon Microsystem and Nanostructure Technology, al. Lotników 32/46, PL-02668 Warsaw, Poland.
authors.forename: Daniel
authors.initials: D
authors.lastname: Tomaszewski
authors.affiliation: Instytut Technologii Elektronowej - ITE Warsaw, Division of Silicon Microsystem and Nanostructure Technology, al. Lotników 32/46, PL-02668 Warsaw, Poland.
authors.forename: Michał
authors.initials: M
authors.lastname: Zaborowski
authors.affiliation: Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland.
authors.forename: Grzegorz
authors.initials: G
authors.lastname: Jóźwiak
authors.affiliation: Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland.
authors.forename: Daniel
authors.initials: D
authors.lastname: Kopiec
authors.affiliation: Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland.
authors.forename: Teodor
authors.initials: T
authors.lastname: Gotszalk
authors.affiliation: Instytut Technologii Elektronowej - ITE Warsaw, Division of Silicon Microsystem and Nanostructure Technology, al. Lotników 32/46, PL-02668 Warsaw, Poland.
authors.forename: Piotr
authors.initials: P
authors.lastname: Grabiec
keywords: Carrier density distribution; Kelvin probe force microscopy; Pinch-off effect; Scanning thermal microscopy; Silicon nanowires