title: Suspended graphene devices with local gate control on an insulating substrate.
abstract: We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The devices are built on a bare high-resistivity silicon substrate. At temperatures of 77 K and below, we observe the field-effect modulation of the graphene resistivity by a voltage applied to the gate. This fabrication approach enables new experiments involving graphene-based superconducting qubits and nano-electromechanical resonators. The method is applicable to other two-dimensional materials.
authors.affiliation: Institute for Quantum Computing, Department of Physics and Astronomy, and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
authors.forename: Florian R
authors.initials: FR
authors.lastname: Ong
authors.forename: Zheng
authors.initials: Z
authors.lastname: Cui
authors.forename: Muhammet A
authors.initials: MA
authors.lastname: Yurtalan
authors.forename: Cameron
authors.initials: C
authors.lastname: Vojvodin
authors.forename: Michał
authors.initials: M
authors.lastname: Papaj
authors.forename: Jean-Luc F X
authors.initials: JL
authors.lastname: Orgiazzi
authors.forename: Chunqing
authors.initials: C
authors.lastname: Deng
authors.forename: Mustafa
authors.initials: M
authors.lastname: Bal
authors.forename: Adrian
authors.initials: A
authors.lastname: Lupascu