title: Crystallographic Wet Chemical Etching of Semipolar GaN (11-22) Grown on m-Plane Sapphire Substrates.
abstract: This paper reports the etch rates and etched surface morphology of semipolar GaN using a potassium hydroxide (KOH) solution. Semipolar (11-22) GaN could be etched easily using a KOH solution and the etch rate was higher than that of Ga-polar c-plane GaN (0001). The etch rate was anisotropic and the highest etch rate was measured to be approximately 116 nm/min for the (1011) plane and 62 nm/min for the (11-20) plane GaN using a 4 M KOH solution at 100 °C, resulting in specific surface features, such as inclined trigonal cells.
authors.forename: Jae-Kwan
authors.initials: JK
authors.lastname: Kim
authors.forename: Sung Nam
authors.initials: SN
authors.lastname: Lee
authors.forename: Keun-Man
authors.initials: KM
authors.lastname: Song
authors.forename: Jae-Sik
authors.initials: JS
authors.lastname: Yoon
authors.forename: Ji-Myon
authors.initials: JM
authors.lastname: Lee