title: Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes.
abstract: Fabrication and electrical and optical characterization of 4H-SiC Schottky UV photodetectors with nickel silicide interdigitated contacts is reported. Dark capacitance and current measurements as a function of applied voltage over the temperature range 20 °C - 120 °C are presented. The results show consistent performance among devices. Their leakage current density, at the highest investigated temperature (120 °C), is in the range of nA/cm(2) at high internal electric field. Properties such as barrier height and ideality factor are also computed as a function of temperature. The responsivities of the diodes as functions of applied voltage were measured using a UV spectrophotometer in the wavelength range 200 nm - 380 nm and compared with theoretically calculated values. The devices had a mean peak responsivity of 0.093 A/W at 270 nm and -15 V reverse bias.
authors.forename: G
authors.initials: G
authors.lastname: Lioliou
authors.forename: M C
authors.initials: MC
authors.lastname: Mazzillo
authors.forename: A
authors.initials: A
authors.lastname: Sciuto
authors.forename: A M
authors.initials: AM
authors.lastname: Barnett