title: Analysis of frequency response of high power MUTC photodiodes based on photocurrent-dependent equivalent circuit model.
abstract: A back-illuminated mesa-structure InGaAs/InP modified uni-traveling-carrier photodiode (MUTC-PD) is fabricated and its frequency response is investigated. A bandwidth of 40 GHz and a saturation photocurrent up to 33 mA are demonstrated. A photocurrent-dependent equivalent circuit model is proposed to analyze the frequency response of the high power MUTC-PDs. The influences of the space-charge screening, self-induced electric field and over-shoot effects are discussed in detail based on the model. Fitted curves obtained from the simple equivalent circuit model are found to be in good agreement with the data measured under different bias voltages and photocurrents.
authors.forename: Jin
authors.initials: J
authors.lastname: Li
authors.forename: Bing
authors.initials: B
authors.lastname: Xiong
authors.forename: Changzheng
authors.initials: C
authors.lastname: Sun
authors.forename: Di
authors.initials: D
authors.lastname: Miao
authors.forename: Yi
authors.initials: Y
authors.lastname: Luo