title: Polarization dependent photocurrent in the Bi2Te3 topological insulator film for multifunctional photodetection.
abstract: Three dimensional Z2 Topological insulator (TI) is an unconventional phase of quantum matter possessing insulating bulk state as well as time-reversal symmetry-protected Dirac-like surface state, which is demonstrated by extensive experiments based on surface sensitive detection techniques. This intriguing gapless surface state is theoretically predicted to exhibit many exotic phenomena when interacting with light, and some of them have been observed. Herein, we report the first experimental observation of novel polarization dependent photocurrent of photodetectors based on the TI Bi2Te3 film under irradiation of linearly polarized light. This photocurrent is linearly dependent on both the light intensity and the applied bias voltage. To pursue the physical origin of the polarization dependent photocurrent, we establish the basic TI surface state model to treat the light irradiation as a perturbation, and we adopt the Boltzmann equation to calculate the photocurrent. It turns out that the theoretical results are in nice qualitative agreement with the experiment. These findings show that the polycrystalline TI Bi2Te3 film working as a multifunctional photodetector can not only detect the light intensity, but also measure the polarization state of the incident light, which is remarkably different from conventional photodetectors that usually only detect the light intensity.
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Physics &Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
authors.forename: J D
authors.initials: JD
authors.lastname: Yao
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Physics &Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
authors.forename: J M
authors.initials: JM
authors.lastname: Shao
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Physics &Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
authors.forename: S W
authors.initials: SW
authors.lastname: Li
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Physics &Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
authors.forename: D H
authors.initials: DH
authors.lastname: Bao
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Physics &Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
authors.forename: G W
authors.initials: GW
authors.lastname: Yang