title: Investigation of germanium quantum-well light sources.
abstract: In this paper, we report a broad investigation of the optical properties of germanium (Ge) quantum-well devices. Our simulations show a significant increase of carrier density in the Ge quantum wells. Photoluminescence (PL) measurements show the enhanced direct-bandgap radiative recombination rates due to the carrier density increase in the Ge quantum wells. Electroluminescence (EL) measurements show the temperature-dependent properties of our Ge quantum-well devices, which are in good agreement with our theoretical models. We also demonstrate the PL measurements of Ge quantum-well microdisks using tapered-fiber collection method and quantify the optical loss of the Ge quantum-well structure from the measured PL spectra for the first time.
authors.forename: Edward T
authors.initials: ET
authors.lastname: Fei
authors.forename: Xiaochi
authors.initials: X
authors.lastname: Chen
authors.forename: Kai
authors.initials: K
authors.lastname: Zang
authors.forename: Yijie
authors.initials: Y
authors.lastname: Huo
authors.forename: Gary
authors.initials: G
authors.lastname: Shambat
authors.forename: Gerald
authors.initials: G
authors.lastname: Miller
authors.forename: Xi
authors.initials: X
authors.lastname: Liu
authors.forename: Raj
authors.initials: R
authors.lastname: Dutt
authors.forename: Theodore I
authors.initials: TI
authors.lastname: Kamins
authors.forename: Jelena
authors.initials: J
authors.lastname: Vuckovic
authors.forename: James S
authors.initials: JS
authors.lastname: Harris