title: Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes.
abstract: The current LED lighting technology relies on the use of a driver to convert alternating current (AC) to low-voltage direct current (DC) power, a resistive p-GaN contact layer to inject positive charge carriers (holes) for blue light emission, and rare-earth doped phosphors to down-convert blue photons into green/red light, which have been identified as some of the major factors limiting the device efficiency, light quality, and cost. Here, we show that multiple-active region phosphor-free InGaN nanowire white LEDs connected through a polarization engineered tunnel junction can fundamentally address the afore-described challenges. Such a p-GaN contact-free LED offers the benefit of carrier regeneration, leading to enhanced light intensity and reduced efficiency droop. Moreover, through the monolithic integration of p-GaN up and p-GaN down nanowire LED structures on the same substrate, we have demonstrated, for the first time, AC operated LEDs on a Si platform, which can operate efficiently in both polarities (positive and negative) of applied voltage.
authors.affiliation: Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: S M
authors.initials: SM
authors.lastname: Sadaf
authors.affiliation: Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: Y-H
authors.initials: YH
authors.lastname: Ra
authors.affiliation: Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: H P T
authors.initials: HP
authors.lastname: Nguyen
authors.affiliation: Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: M
authors.initials: M
authors.lastname: Djavid
authors.affiliation: Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: Z
authors.initials: Z
authors.lastname: Mi
keywords: AC LED; GaN; Nanowire; light emitting diode; quantum dot; tunnel junction