title: Ultrasensitive and Broadband MoS₂ Photodetector Driven by Ferroelectrics.
abstract: A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved. The detectivity and responsitivity are up to 2.2 × 10(12) Jones and 2570 A W(-1), respectively, at 635 nm with ZERO gate bias. E(g) of MoS2 is tuned by the ultrahigh electrostatic field from the ferroelectric polarization. The photoresponse wavelengths of the photodetector are extended into the near-infrared (0.85-1.55 μm).
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.|School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, 411105, China.
authors.forename: Xudong
authors.initials: X
authors.lastname: Wang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Wang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.
authors.forename: Jianlu
authors.initials: J
authors.lastname: Wang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.
authors.forename: Weida
authors.initials: W
authors.lastname: Hu
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.
authors.forename: Xiaohao
authors.initials: X
authors.lastname: Zhou
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.
authors.forename: Nan
authors.initials: N
authors.lastname: Guo
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.
authors.forename: Hai
authors.initials: H
authors.lastname: Huang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.
authors.forename: Shuo
authors.initials: S
authors.lastname: Sun
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.
authors.forename: Hong
authors.initials: H
authors.lastname: Shen
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.
authors.forename: Tie
authors.initials: T
authors.lastname: Lin
authors.affiliation: School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, 411105, China.
authors.forename: Minghua
authors.initials: M
authors.lastname: Tang
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Liao
authors.affiliation: Department of Microelectronics, Fudan University, 220 Handan Road, Shanghai, 200433, China.
authors.forename: Anquan
authors.initials: A
authors.lastname: Jiang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.
authors.forename: Jinglan
authors.initials: J
authors.lastname: Sun
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.
authors.forename: Xiangjian
authors.initials: X
authors.lastname: Meng
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.
authors.forename: Xiaoshuang
authors.initials: X
authors.lastname: Chen
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Lu
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.
authors.forename: Junhao
authors.initials: J
authors.lastname: Chu
keywords: 2D materials, MoS2 transistors; ferroelectrics; photodetectors; photoresponsitivity