title: Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition.
abstract: In this work, we have demonstrated the synthesis of high-quality monolayered α-In2Se3 using physical vapor deposition method under atmospheric pressure. The quality of the In2Se3 atomic layers has been confirmed by complementary characterization technologies such as Raman/photoluminescence spectroscopies and atomic force microscope. The atomically resolved images have been obtained by the annular dark-field scanning transmission electron microscope. The field-effect transistors have been fabricated using the atomically layered In2Se3 and exhibit p-type semiconducting behaviors with the mobility up to 2.5 cm(2)/ Vs. The In2Se3 layers also show a good photoresponsivity of 340A/W, as well as 6 ms response time for the rise and 12 ms for the fall. These results make In2Se3 atomic layers a promising candidate for the optoelectronic and photosensitive device applications.
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore.
authors.forename: Jiadong
authors.initials: J
authors.lastname: Zhou
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore.
authors.forename: Qingsheng
authors.initials: Q
authors.lastname: Zeng
authors.affiliation: State Key Laboratory of Silicon Materials, and School of Material Science & Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China.
authors.forename: Danhui
authors.initials: D
authors.lastname: Lv
authors.affiliation: Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University , 637371, Singapore.
authors.forename: Linfeng
authors.initials: L
authors.lastname: Sun
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore.
authors.forename: Lin
authors.initials: L
authors.lastname: Niu
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore.
authors.forename: Wei
authors.initials: W
authors.lastname: Fu
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore.
authors.forename: Fucai
authors.initials: F
authors.lastname: Liu
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore.|Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University , 637371, Singapore.
authors.forename: Zexiang
authors.initials: Z
authors.lastname: Shen
authors.affiliation: State Key Laboratory of Silicon Materials, and School of Material Science & Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China.
authors.forename: Chuanhong
authors.initials: C
authors.lastname: Jin
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore.|NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University , 639798, Singapore.
authors.forename: Zheng
authors.initials: Z
authors.lastname: Liu
keywords: 2D materials; In2Se3 monolayer; PVD; high mobility