title: Graphene/h-BN/ZnO van der Waals tunneling heterostructure based ultraviolet photodetector.
abstract: We report a novel ultraviolet photodetector based on graphene/h-BN/ZnO van der Waals heterostructure. Graphene/ZnO heterostructure shows poor rectification behavior and almost no photoresponse. In comparison, graphene/h-BN/ZnO structure shows improved electrical rectified behavior and surprising high UV photoresponse (1350AW(-1)), which is two or three orders magnitude larger than reported GaN UV photodetector (0.2~20AW(-1)). Such high photoresponse mainly originates from the introduction of ultrathin two-dimensional (2D) insulating h-BN layer, which behaves as the tunneling layer for holes produced in ZnO and the blocking layer for holes in graphene. The graphene/h-BN/ZnO heterostructure should be a novel and representative 2D heterostructure for improving the performance of 2D materials/Semiconductor heterostructure based optoelectronic devices.
authors.forename: Zhiqian
authors.initials: Z
authors.lastname: Wu
authors.forename: Xiaoqiang
authors.initials: X
authors.lastname: Li
authors.forename: Huikai
authors.initials: H
authors.lastname: Zhong
authors.forename: Shengjiao
authors.initials: S
authors.lastname: Zhang
authors.forename: Peng
authors.initials: P
authors.lastname: Wang
authors.forename: Tae-ho
authors.initials: TH
authors.lastname: Kim
authors.forename: Sung Soo
authors.initials: SS
authors.lastname: Kwak
authors.forename: Cheng
authors.initials: C
authors.lastname: Liu
authors.forename: Hongsheng
authors.initials: H
authors.lastname: Chen
authors.forename: Sang-Woo
authors.initials: SW
authors.lastname: Kim
authors.forename: Shisheng
authors.initials: S
authors.lastname: Lin