title: Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.
abstract: Controllable axial switching of polarity in GaAs nanowires with minimal tapering and perfect twin-free ZB structure based on the fundamental understanding of nanowire growth and kinking mechanism is presented. The polarity of the bottom segment is confirmed to be (111)A by atomically resolved scanning transmission electron microscopy.
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 2601, Australia.
authors.forename: Xiaoming
authors.initials: X
authors.lastname: Yuan
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 2601, Australia.
authors.forename: Philippe
authors.initials: P
authors.lastname: Caroff
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 2601, Australia.
authors.forename: Jennifer
authors.initials: J
authors.lastname: Wong-Leung
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 2601, Australia.
authors.forename: Lan
authors.initials: L
authors.lastname: Fu
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 2601, Australia.
authors.forename: Hark Hoe
authors.initials: HH
authors.lastname: Tan
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 2601, Australia.
authors.forename: Chennupati
authors.initials: C
authors.lastname: Jagadish
keywords: GaAs; growth mechanisms; nanowires; polarity; surface energy