title: Investigation of Photovoltaic Properties of Single Core-Shell GaN/InGaN Wires.
abstract: We report the investigation of the photovoltaic properties of core-shell GaN/InGaN wires. The radial structure is grown on m-plane {11̅00} facets of self-assembled c̅-axis GaN wires elaborated by metal-organic vapor phase epitaxy (MOVPE) on sapphire substrates. The conversion efficiency of wires with radial shell composed of thick In0.1Ga0.9N layers and of 30× In0.18Ga0.82N/GaN quantum wells are compared. We also investigate the impact of the contact nature and layout on the carrier collection and photovoltaic performances. The contact optimization results in an improved conversion efficiency of 0.33% and a fill factor of 83% under 1 sun (AM1.5G) on single wires with a quantum well-based active region. Photocurrent spectroscopy demonstrates that the response ascribed to the absorption of InGaN/GaN quantum wells appears at wavelengths shorter than 440 nm.
authors.affiliation: Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405 Orsay, France.|Université Grenoble Alpes , 38000 Grenoble, France.|CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group, 38000 Grenoble, France.
authors.forename: A
authors.initials: A
authors.lastname: Messanvi
authors.affiliation: Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405 Orsay, France.
authors.forename: H
authors.initials: H
authors.lastname: Zhang
authors.affiliation: Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405 Orsay, France.
authors.forename: V
authors.initials: V
authors.lastname: Neplokh
authors.affiliation: Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405 Orsay, France.
authors.forename: F H
authors.initials: FH
authors.lastname: Julien
authors.affiliation: Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405 Orsay, France.
authors.forename: F
authors.initials: F
authors.lastname: Bayle
authors.affiliation: LPICM, Ecole Polytechnique, CNRS, 91128 Palaiseau, France.
authors.forename: M
authors.initials: M
authors.lastname: Foldyna
authors.affiliation: Université Grenoble Alpes , 38000 Grenoble, France.|CNRS, Inst. NEEL, 38042 Grenoble, France.
authors.forename: C
authors.initials: C
authors.lastname: Bougerol
authors.affiliation: Université Grenoble Alpes , 38000 Grenoble, France.|CEA, INAC-SPINTEC, 38000 Grenoble, France.
authors.forename: E
authors.initials: E
authors.lastname: Gautier
authors.affiliation: ITMO University , 197101 St. Petersburg, Russia.
authors.forename: A
authors.initials: A
authors.lastname: Babichev
authors.affiliation: Université Grenoble Alpes , 38000 Grenoble, France.|CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group, 38000 Grenoble, France.
authors.forename: C
authors.initials: C
authors.lastname: Durand
authors.affiliation: Université Grenoble Alpes , 38000 Grenoble, France.|CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group, 38000 Grenoble, France.
authors.forename: J
authors.initials: J
authors.lastname: Eymery
authors.affiliation: Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405 Orsay, France.
authors.forename: M
authors.initials: M
authors.lastname: Tchernycheva
keywords: EBIC; InGaN/GaN MQWs; MOVPE; photocurrent spectroscopy; photovoltaics; wires