title: Ultrasensitive Photodetectors Based on Island-Structured CH3NH3PbI3 Thin Films.
abstract: CH3NH3PbI3 perovskite-based optoelectronics have attracted intense research interests recently because of their easy fabrication process and high power conversion efficiency. Herein, we report a novel photodetector based on unique CH3NH3PbI3 perovskite films with island-structured morphology. The light-induced electronic properties of the photodetectors were investigated and compared to those devices based on conventional compact CH3NH3PbI3 films. The island-structured CH3NH3PbI3 photodetectors exhibited a rapid response speed (<50 ms), good stability at a temperature of up to 100 °C, a large photocurrent to dark current ratio (Ilight/Idark > 1 × 10(4) under an incident light of ∼6.59 mW/cm(2), and Ilight/Idark > 1 × 10(2) under low incident light ∼0.018 mW/cm(2)), and excellent reproducibility. Especially, the performance of the island-structured devices markedly exceed that of the conventional compact CH3NH3PbI3 thin-film devices. These excellent performances render the island-structured device to be potentially applicable for a wide range of optoelectronics.
authors.affiliation: School of Materials and Engineering, Tongji University , Shanghai 201804, China.|Key Laboratory of Advanced Civil Engineering Materials, Tongji University, Ministry of Education , Shanghai 201804, China.
authors.forename: Yin
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: School of Materials and Engineering, Tongji University , Shanghai 201804, China.
authors.forename: Juan
authors.initials: J
authors.lastname: Du
authors.affiliation: School of Materials and Engineering, Tongji University , Shanghai 201804, China.
authors.forename: Xiaohan
authors.initials: X
authors.lastname: Wu
authors.affiliation: School of Materials and Engineering, Tongji University , Shanghai 201804, China.
authors.forename: Guoqian
authors.initials: G
authors.lastname: Zhang
authors.affiliation: School of Materials and Engineering, Tongji University , Shanghai 201804, China.
authors.forename: Yingli
authors.initials: Y
authors.lastname: Chu
authors.affiliation: School of Materials and Engineering, Tongji University , Shanghai 201804, China.
authors.forename: Dapeng
authors.initials: D
authors.lastname: Liu
authors.affiliation: School of Environmental Science and Engineering, Shanghai Jiao Tong University , Shanghai 200240, China.
authors.forename: Yixin
authors.initials: Y
authors.lastname: Zhao
authors.affiliation: Department of Materials Science, Fudan University , Shanghai 200433, China.
authors.forename: Ziqi
authors.initials: Z
authors.lastname: Liang
authors.affiliation: School of Materials and Engineering, Tongji University , Shanghai 201804, China.|Key Laboratory of Advanced Civil Engineering Materials, Tongji University, Ministry of Education , Shanghai 201804, China.
authors.forename: Jia
authors.initials: J
authors.lastname: Huang
keywords: CH3NH3PbI3 perovskites; high sensitivity; island-structured thin film, sensor; photodetector