title: Light-trapping in photon enhanced thermionic emitters.
abstract: A series of photonic crystal structures are optimized for a photon enhanced thermionic emitter. With realistic parameter values to describe a p-type GaAs device we find an efficiency above 10%. The light-trapping structures increases the performance by 2% over an optimal bilayer anti-reflective coating. We find a device efficiency very close to the case of a Lambertian absorber, but below its maximum performance. To prevent an efficiency below 10% the vacuum gap must be dimensioned according to the concentration factor of the solar irradiance.
authors.forename: Jerónimo
authors.initials: J
authors.lastname: Buencuerpo
authors.forename: José M
authors.initials: JM
authors.lastname: Llorens
authors.forename: Pierfrancesco
authors.initials: P
authors.lastname: Zilio
authors.forename: Waseem
authors.initials: W
authors.lastname: Raja
authors.forename: Joao
authors.initials: J
authors.lastname: Cunha
authors.forename: Alessandro
authors.initials: A
authors.lastname: Alabastri
authors.forename: Remo Proietti
authors.initials: RP
authors.lastname: Zaccaria
authors.forename: Antonio
authors.initials: A
authors.lastname: Martí
authors.forename: Thijs
authors.initials: T
authors.lastname: Versloot