title: Optical emission generated from silicon under dual-wavelength femtosecond double-pulse laser irradiation.
abstract: In femtosecond double-pulse laser-induced breakdown spectroscopy, collinear double-pulse performance is investigated experimentally using various laser wavelength combinations of 800 nm and 400 nm Ti: sapphire lasers. The induced plasma emission line collected by BK7 lenses is the Si (I) at 390.55 nm. The double-pulse time separation ranges from -300 ps to 300 ps. The line intensity is dependent on the time separation of the dual-wavelength femtosecond double-pulse, and its behavior is unlike that of single-wavelength femtosecond double-pulses. Optical emission intensity can be enhanced by selecting appropriate time separation between sub-pulses. This result is particularly advantageous in the context of femtosecond laser-induced breakdown spectroscopy.
authors.forename: Anmin
authors.initials: A
authors.lastname: Chen
authors.forename: Ying
authors.initials: Y
authors.lastname: Wang
authors.forename: Laizhi
authors.initials: L
authors.lastname: Sui
authors.forename: Suyu
authors.initials: S
authors.lastname: Li
authors.forename: Shuchang
authors.initials: S
authors.lastname: Li
authors.forename: Dunli
authors.initials: D
authors.lastname: Liu
authors.forename: Yuanfei
authors.initials: Y
authors.lastname: Jiang
authors.forename: Mingxing
authors.initials: M
authors.lastname: Jin