title: Fast probe of local electronic states in nanostructures utilizing a single-lead quantum dot.
abstract: Transport measurements are powerful tools to probe electronic properties of solid-state materials. To access properties of local electronic states in nanostructures, such as local density of states, electronic distribution and so on, micro-probes utilizing artificial nanostructures have been invented to perform measurements in addition to those with conventional macroscopic electronic reservoirs. Here we demonstrate a new kind of micro-probe: a fast single-lead quantum dot probe, which utilizes a quantum dot coupled only to the target structure through a tunneling barrier and fast charge readout by RF reflectometry. The probe can directly access the local electronic states with wide bandwidth. The probe can also access more electronic states, not just those around the Fermi level, and the operations are robust against bias voltages and temperatures.
authors.affiliation: Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.|Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
authors.forename: Tomohiro
authors.initials: T
authors.lastname: Otsuka
authors.affiliation: Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
authors.forename: Shinichi
authors.initials: S
authors.lastname: Amaha
authors.affiliation: Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.|Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Nakajima
authors.affiliation: Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.|Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
authors.forename: Matthieu R
authors.initials: MR
authors.lastname: Delbecq
authors.affiliation: Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.|Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
authors.forename: Jun
authors.initials: J
authors.lastname: Yoneda
authors.affiliation: Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.|Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
authors.forename: Kenta
authors.initials: K
authors.lastname: Takeda
authors.affiliation: Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.|Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
authors.forename: Retsu
authors.initials: R
authors.lastname: Sugawara
authors.affiliation: Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.|Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
authors.forename: Giles
authors.initials: G
authors.lastname: Allison
authors.affiliation: Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany.
authors.forename: Arne
authors.initials: A
authors.lastname: Ludwig
authors.affiliation: Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany.
authors.forename: Andreas D
authors.initials: AD
authors.lastname: Wieck
authors.affiliation: Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.|Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.|Quantum-Phase Electronics Center, University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.|Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan.
authors.forename: Seigo
authors.initials: S
authors.lastname: Tarucha