title: The effect of substrate and external strain on electronic structures of stanene film.
abstract: From first-principles calculations, the effects of h-BN and AlN substrates on the topological nontrivial properties of stanene are studied with different strains. We find that the quantum spin Hall phase can be induced in stanene film on a h-BN substrate under a tensile strain of between 6.0% and 9.3% with a stable state confirmed by the phonon spectrum, while for stanene on 5 × 5 h-BN, the quantum spin Hall phase can be preserved without strain. However, for stanene on a AlN substrate, the quantum spin Hall phase cannot be found under compressive or tensile strains less than 10%, while for 2 × 2 stanene on 3 × 3 AlN, the compressive strain needed to induce the quantum spin Hall phase is just 2%. These theoretical results will be helpful in understanding the effect of substrate and strain on stanene and in further realizing the quantum spin Hall effect in stanene on semiconductor substrates.
authors.affiliation: Institute of Condensed Matter Physics, Linyi University, Shandong 276000, China. chenli@lyu.edu.cn.
authors.forename: Dongchao
authors.initials: D
authors.lastname: Wang
authors.forename: Li
authors.initials: L
authors.lastname: Chen
authors.forename: Xiaoli
authors.initials: X
authors.lastname: Wang
authors.forename: Guangliang
authors.initials: G
authors.lastname: Cui
authors.forename: Pinhua
authors.initials: P
authors.lastname: Zhang