title: Efficiency of GaInAs thermophotovoltaic cells: the effects of incident radiation, light trapping and recombinations.
abstract: The radiative limit model, based on the black body theory extended to semiconductors and the flow equilibrium in the cell, has been adapted for Ga(x)In(1-x)As thermophotovoltaic devices. The impact of the thermal emitter temperature and the incident power density on the performance of cells for different Ga/In ratios has been investigated. The effects of the thickness of the cell and of light trapping have been investigated as well. A theoretical maximum efficiency of 24.2% has been calculated for a dislocation-free 5-μm-thick cell with a 0.43 eV bandgap illuminated by a source at 1800 K. The model also takes into account Auger recombinations and threading dislocations-related Shockley-Read-Hall recombinations.
authors.forename: Pamela
authors.initials: P
authors.lastname: Jurczak
authors.forename: Arthur
authors.initials: A
authors.lastname: Onno
authors.forename: Kimberly
authors.initials: K
authors.lastname: Sablon
authors.forename: Huiyun
authors.initials: H
authors.lastname: Liu