title: High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift.
abstract: During the fast switching in Ge2Sb2Te5 phase change memory devices, both the amorphous and fcc crystalline phases remain metastable beyond the fcc and hexagonal transition temperatures respectively. In this work, the metastable electrical properties together with crystallization times and resistance drift behaviour of GST are studied using a high-speed, device-level characterization technique in the temperature range of 300 K to 675 K.
authors.affiliation: Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA. faruk.dirisaglik@uconn.edu gokirmak@engr.uconn.edu.
authors.forename: Faruk
authors.initials: F
authors.lastname: Dirisaglik
authors.forename: Gokhan
authors.initials: G
authors.lastname: Bakan
authors.forename: Zoila
authors.initials: Z
authors.lastname: Jurado
authors.forename: Sadid
authors.initials: S
authors.lastname: Muneer
authors.forename: Mustafa
authors.initials: M
authors.lastname: Akbulut
authors.forename: Jonathan
authors.initials: J
authors.lastname: Rarey
authors.forename: Lindsay
authors.initials: L
authors.lastname: Sullivan
authors.forename: Maren
authors.initials: M
authors.lastname: Wennberg
authors.forename: Adrienne
authors.initials: A
authors.lastname: King
authors.forename: Lingyi
authors.initials: L
authors.lastname: Zhang
authors.forename: Rebecca
authors.initials: R
authors.lastname: Nowak
authors.forename: Chung
authors.initials: C
authors.lastname: Lam
authors.forename: Helena
authors.initials: H
authors.lastname: Silva
authors.forename: Ali
authors.initials: A
authors.lastname: Gokirmak