title: Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures.
abstract: Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here we report an extremely large local magnetoresistance of ∼2,000% at 400 K and a non-local magnetoresistance of >90,000% in an applied magnetic field of 9 T at 300 K in few-layer graphene/boron-nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen-Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene-based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications.
authors.affiliation: Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore.|Department of Electrical and Computer Engineering, and NUSNNI-Nanocore, National University of Singapore, Singapore 117576, Singapore.
authors.forename: Kalon
authors.initials: K
authors.lastname: Gopinadhan
authors.affiliation: Department of Electrical and Computer Engineering, and NUSNNI-Nanocore, National University of Singapore, Singapore 117576, Singapore.
authors.forename: Young Jun
authors.initials: YJ
authors.lastname: Shin
authors.affiliation: Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M12 9PL, UK.
authors.forename: Rashid
authors.initials: R
authors.lastname: Jalil
authors.affiliation: Department of Electrical and Computer Engineering, and NUSNNI-Nanocore, National University of Singapore, Singapore 117576, Singapore.|Department of Physics, National University of Singapore, Singapore 117542, Singapore.
authors.forename: Thirumalai
authors.initials: T
authors.lastname: Venkatesan
authors.affiliation: Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M12 9PL, UK.
authors.forename: Andre K
authors.initials: AK
authors.lastname: Geim
authors.affiliation: Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore.|Department of Physics, National University of Singapore, Singapore 117542, Singapore.
authors.forename: Antonio H Castro
authors.initials: AHC
authors.lastname: Neto
authors.affiliation: Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore.|Department of Electrical and Computer Engineering, and NUSNNI-Nanocore, National University of Singapore, Singapore 117576, Singapore.
authors.forename: Hyunsoo
authors.initials: H
authors.lastname: Yang