title: Enhanced Reduction of Graphene Oxide on Recyclable Cu Foils to Fabricate Graphene Films with Superior Thermal Conductivity.
abstract: Large-area freestanding graphene films are facilely fabricated by reducing graphene oxide films on recyclable Cu foils in H2-containing atmosphere at high temperature. Cu might act as efficient catalysts for considerably improved reduction of graphene oxide according to the SEM, EDS, XRD, XPS, Raman and TGA results. Comparing to the graphene films with ~30 μm thickness reduced without Cu substrate at 900 °C, the thermal conductivity and electrical conductivity of graphene films reduced on Cu foils are enhanced about 140% to 902 Wm(-1)K(-1) and 3.6 × 10(4) S/m, respectively. Moreover, the graphene films demonstrate superior thermal conductivity of ~1219 Wm(-1)K(-1) as decreasing the thickness of films to ~10 μm. The graphene films also exhibit excellent mechanical properties and flexibility.
authors.affiliation: Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China.|Shenzhen High Density Electronic Packaging and Device Assembly Key Laboratory Shenzhen, 518055, China.
authors.forename: Sheng-Yun
authors.initials: SY
authors.lastname: Huang
authors.affiliation: Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China.|Shenzhen High Density Electronic Packaging and Device Assembly Key Laboratory Shenzhen, 518055, China.
authors.forename: Bo
authors.initials: B
authors.lastname: Zhao
authors.affiliation: Department of Mechanical Engineering, Hong Kong University of Science and Technology, Hong Kong, China.
authors.forename: Kai
authors.initials: K
authors.lastname: Zhang
authors.affiliation: Department of Mechanical Engineering, Hong Kong University of Science and Technology, Hong Kong, China.
authors.forename: Matthew M F
authors.initials: MM
authors.lastname: Yuen
authors.affiliation: Department of Electronics Engineering, The Chinese University of Hong Kong, Hong Kong, China.
authors.forename: Jian-Bin
authors.initials: JB
authors.lastname: Xu
authors.affiliation: Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China.|Shenzhen High Density Electronic Packaging and Device Assembly Key Laboratory Shenzhen, 518055, China.
authors.forename: Xian-Zhu
authors.initials: XZ
authors.lastname: Fu
authors.affiliation: Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China.|Shenzhen High Density Electronic Packaging and Device Assembly Key Laboratory Shenzhen, 518055, China.
authors.forename: Rong
authors.initials: R
authors.lastname: Sun
authors.affiliation: Department of Electronics Engineering, The Chinese University of Hong Kong, Hong Kong, China.|School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States.
authors.forename: Ching-Ping
authors.initials: CP
authors.lastname: Wong