title: Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors.
abstract: Low-frequency current fluctuations are monitored and the mechanism of electric noise investigated in layered 2H-type α-molybdenum ditelluride transistors. The charge transport mechanism of electric noise in atomically thin transition-metal dichalcogenides is studied under different environments; the development of a new sensing functionality may be stimulated.
authors.affiliation: Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan.
authors.forename: Yen-Fu
authors.initials: YF
authors.lastname: Lin
authors.affiliation: Department of Energy and Materials Engineering, Dongguk University, Seoul, 100-715, Korea.
authors.forename: Yong
authors.initials: Y
authors.lastname: Xu
authors.affiliation: Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan.
authors.forename: Che-Yi
authors.initials: CY
authors.lastname: Lin
authors.affiliation: Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan.
authors.forename: Yuen-Wuu
authors.initials: YW
authors.lastname: Suen
authors.affiliation: WPI Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan.
authors.forename: Mahito
authors.initials: M
authors.lastname: Yamamoto
authors.affiliation: WPI Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan.
authors.forename: Shu
authors.initials: S
authors.lastname: Nakaharai
authors.affiliation: Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan.
authors.forename: Keiji
authors.initials: K
authors.lastname: Ueno
authors.affiliation: WPI Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan.
authors.forename: Kazuhito
authors.initials: K
authors.lastname: Tsukagoshi
keywords: MoTe2; low-frequency noise; nanoscale electronics; random telegraph signals; transition metal dichalcogenides