title: In-plane tunnelling field-effect transistor integrated on Silicon.
abstract: Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volatility via charge-effects and giant magneto-resistance. On the other hand, there has been a numerous demonstrations of the so-called magnetoelectric effect (coupling between ferroelectric and ferromagnetic order) using nearly-perfect heterostructures. However, the scrutiny of the ingredients that lead to magnetoelectric coupling, namely magnetic moment and a conducting channel, does not necessarily require structural perfection. In this work, we circumvent the stringent requirements for epilayers while preserving the magnetoelectric functionality in a silicon-integrated device. Additionally, we have identified an in-plane tunnelling mechanism which responds to a vertical electric field. This genuine electroresistance effect is distinct from known resistive-switching or tunnel electro resistance.
authors.affiliation: Max Planck Institute of Microstructure Physics, Weinberg 2, Halle (Saale), D-06120, Germany.|Department of Physics, University of Warwick, Coventry CV 4 7AL, United Kingdom.|ICN2-Institut Català de Nanociència i Nanotecnologia, Campus Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain.
authors.forename: Ignasi
authors.initials: I
authors.lastname: Fina
authors.affiliation: Department of Physics, University of Warwick, Coventry CV 4 7AL, United Kingdom.
authors.forename: Geanina
authors.initials: G
authors.lastname: Apachitei
authors.affiliation: Max Planck Institute of Microstructure Physics, Weinberg 2, Halle (Saale), D-06120, Germany.
authors.forename: Daniele
authors.initials: D
authors.lastname: Preziosi
authors.affiliation: Max Planck Institute of Microstructure Physics, Weinberg 2, Halle (Saale), D-06120, Germany.
authors.forename: Hakan
authors.initials: H
authors.lastname: Deniz
authors.affiliation: Department of Condensed Matter Physics, Faculty of Mathematics and, Physics, Charles University, CZ-121 16 Prague 2, Czech Republic.
authors.forename: Dominik
authors.initials: D
authors.lastname: Kriegner
authors.affiliation: Department of Spintronics and Nanoelectronics, Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic.
authors.forename: Xavier
authors.initials: X
authors.lastname: Marti
authors.affiliation: Department of Physics, University of Warwick, Coventry CV 4 7AL, United Kingdom.
authors.forename: Marin
authors.initials: M
authors.lastname: Alexe