title: Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.
abstract: Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.
authors.forename: Kun
authors.initials: K
authors.lastname: Zhang
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.
authors.forename: Huan-Huan
authors.initials: HH
authors.lastname: Li
authors.affiliation: Peter Grünberg Institute, Forschungszentrum Jülich, Wilhelm-Johnen-Straße, Jülich, 52428, Germany.
authors.forename: Peter
authors.initials: P
authors.lastname: Grünberg
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.
authors.forename: Qiang
authors.initials: Q
authors.lastname: Li
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.
authors.forename: Sheng-Tao
authors.initials: ST
authors.lastname: Ye
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.
authors.forename: Yu-Feng
authors.initials: YF
authors.lastname: Tian
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.
authors.forename: Shi-Shen
authors.initials: SS
authors.lastname: Yan
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.
authors.forename: Zhao-Jun
authors.initials: ZJ
authors.lastname: Lin
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.
authors.forename: Shi-Shou
authors.initials: SS
authors.lastname: Kang
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.
authors.forename: Yan-Xue
authors.initials: YX
authors.lastname: Chen
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.
authors.forename: Guo-Lei
authors.initials: GL
authors.lastname: Liu
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.
authors.forename: Liang-Mo
authors.initials: LM
authors.lastname: Mei