title: Growth and characterization of SiGeSn quantum well photodiodes.
abstract: We report on the fabrication and electro-optical characterization of SiGeSn multi-quantum well PIN diodes. Two types of PIN diodes, in which two and four quantum wells with well and barrier thicknesses of 10 nm each are sandwiched between B- and Sb-doped Ge-regions, were fabricated as single-mesa devices, using a low-temperature fabrication process. We discuss measurements of the diode characteristics, optical responsivity and room-temperature electroluminescence and compare with theoretical predictions from band structure calculations.
authors.forename: Inga A
authors.initials: IA
authors.lastname: Fischer
authors.forename: Torsten
authors.initials: T
authors.lastname: Wendav
authors.forename: Lion
authors.initials: L
authors.lastname: Augel
authors.forename: Songchai
authors.initials: S
authors.lastname: Jitpakdeebodin
authors.forename: Filipe
authors.initials: F
authors.lastname: Oliveira
authors.forename: Alessandro
authors.initials: A
authors.lastname: Benedetti
authors.forename: Stefan
authors.initials: S
authors.lastname: Stefanov
authors.forename: Stefano
authors.initials: S
authors.lastname: Chiussi
authors.forename: Giovanni
authors.initials: G
authors.lastname: Capellini
authors.forename: Kurt
authors.initials: K
authors.lastname: Busch
authors.forename: Jörg
authors.initials: J
authors.lastname: Schulze