title: Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells.
abstract: AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport. In this article, a step quantum well is proposed to attempt solving this problem, in which a novel spacer barrier layer is used to balance the internal electric field. As a result, a nearly flat band potential profile is obtained in the step barrier layers of the AlGaN/GaN step quantum wells and a bound-to-quasi-continuum (B-to-QC) type intersubband prototype device with detectable photocurrent at atmosphere window (3-5 μm) is achieved in such nitride semiconductors.
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: X
authors.initials: X
authors.lastname: Rong
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.|Collaborative Innovation Center of Quantum Matter, Beijing, China.
authors.forename: X Q
authors.initials: XQ
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: G
authors.initials: G
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: X T
authors.initials: XT
authors.lastname: Zheng
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: P
authors.initials: P
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: F J
authors.initials: FJ
authors.lastname: Xu
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Z X
authors.initials: ZX
authors.lastname: Qin
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: N
authors.initials: N
authors.lastname: Tang
authors.affiliation: Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083, China.
authors.forename: Y H
authors.initials: YH
authors.lastname: Chen
authors.affiliation: National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan.
authors.forename: L W
authors.initials: LW
authors.lastname: Sang
authors.affiliation: National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan.
authors.forename: M
authors.initials: M
authors.lastname: Sumiya
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: W K
authors.initials: WK
authors.lastname: Ge
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.|Collaborative Innovation Center of Quantum Matter, Beijing, China.
authors.forename: B
authors.initials: B
authors.lastname: Shen