title: Single-Layer ReS₂: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy.
abstract: Rhenium disulfide (ReS2) and diselenide (ReSe2), the group 7 transition metal dichalcogenides (TMDs), are known to have a layered atomic structure showing an in-plane motif of diamond-shaped-chains (DS-chains) arranged in parallel. Using a combination of transmission electron microscopy and transport measurements, we demonstrate here the direct correlation of electron transport anisotropy in single-layered ReS2 with the atomic orientation of the DS-chains, as also supported by our density functional theory calculations. We further show that the direction of conducting channels in ReS2 and ReSe2 can be controlled by electron beam irradiation at elevated temperatures and follows the strain induced to the sample. Furthermore, high chalcogen deficiency can induce a structural transformation to a nonstoichiometric phase, which is again strongly direction-dependent. This tunable in-plane transport behavior opens up great avenues for creating nanoelectronic circuits in 2D materials.
authors.affiliation: National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan.
authors.forename: Yung-Chang
authors.initials: YC
authors.lastname: Lin
authors.forename: Hannu-Pekka
authors.initials: HP
authors.lastname: Komsa
authors.affiliation: Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
authors.forename: Chao-Hui
authors.initials: CH
authors.lastname: Yeh
authors.affiliation: Department of Physics, Åbo Akademi , FI-20500 Turku, Finland.
authors.forename: Torbjörn
authors.initials: T
authors.lastname: Björkman
authors.forename: Zheng-Yong
authors.initials: ZY
authors.lastname: Liang
authors.forename: Ching-Hwa
authors.initials: CH
authors.lastname: Ho
authors.forename: Ying-Sheng
authors.initials: YS
authors.lastname: Huang
authors.affiliation: Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
authors.forename: Po-Wen
authors.initials: PW
authors.lastname: Chiu
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research , 01328 Dresden, Germany.
authors.forename: Arkady V
authors.initials: AV
authors.lastname: Krasheninnikov
authors.affiliation: National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan.
authors.forename: Kazu
authors.initials: K
authors.lastname: Suenaga
keywords: ReS2; ReSe2; anisotropic; electrical transport; scanning transmission electron microscopy; transition metal dichalcogenides