title: Effects of ZnO seed layer annealing temperature on the properties of n-ZnO NWs/Al(2)O(3)/p-Si heterojunction.
abstract: Effects of ZnO seed layer annealing temperature on the characteristics of the n-ZnO nanowires/Al(2)O(3)/p-Si heterojunction are investigated. Well-aligned ZnO nanowires (NWs) are grown through a simple hydrothermal method. Both the insertion of Al(2)O(3) buffer layer and the annealing treatment of ZnO seed layer are advantageous for the growth of ZnO NWs. This leads to a relatively high rectification ratio of up to 7.8 × 10(3) at ± 4.0 V in ZnO NWs/Al(2)O(3)/p-Si heterojunction photodetectors. The photoelectrical property of n-ZnO/p-Si photodetectors with an enhanced UV/dark current ratio as high as 30 under a reverse bias of 4.0 V is obtained.
authors.forename: Yu-Zhu
authors.initials: YZ
authors.lastname: Gu
authors.forename: Hong-Liang
authors.initials: HL
authors.lastname: Lu
authors.forename: Yuan
authors.initials: Y
authors.lastname: Zhang
authors.forename: Peng-Fei
authors.initials: PF
authors.lastname: Wang
authors.forename: Shi-Jin
authors.initials: SJ
authors.lastname: Ding
authors.forename: David Wei
authors.initials: DW
authors.lastname: Zhang