title: Annealing Dependence of Solution-Processed Ultra-Thin ZrOx Films for Gate Dielectric Applications.
abstract: Ultra-thin ZrOx thin films on Si substrates were prepared by sol-gel technique and processed with different methods (baked on hot plate at 150 °C, annealed at 500 °C in furnace, and photo-annealed under UV light). The decomposition of the organic groups and the formation of Zr-O bonding in the ZrOx thin films were confirmed by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. It is found that the ZrOx thin film annealed under UV light shows decent characteristics, including an ultra-small surface roughness, a low leakage current density of 10(-9) A/cm2 at 1 MV/cm, a large breakdown electric field of 9.5 MV/cm, and a large areal capacitance of 775 nF/cm2.
authors.forename: G X
authors.initials: GX
authors.lastname: Liu
authors.forename: A
authors.initials: A
authors.lastname: Liu
authors.forename: Y
authors.initials: Y
authors.lastname: Meng
authors.forename: F K
authors.initials: FK
authors.lastname: Shan
authors.forename: B C
authors.initials: BC
authors.lastname: Shin
authors.forename: W J
authors.initials: WJ
authors.lastname: Lee
authors.forename: C R
authors.initials: CR
authors.lastname: Cho