title: Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy.
abstract: Lateral WS2-MoS2 heterostructures are synthesized by a shortcut one-step growth recipe with low-cost and soluble salts. The 2D spatial distributions of the built-in potential and the related electric field of the lateral WS2-MoS2 heterostructure are quantitatively analyzed by scanning Kelvin probe force microscopy revealing the fundamental attributes of the lateral heterostructure devices.
authors.affiliation: Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, 999077, P. R. China.
authors.forename: Kun
authors.initials: K
authors.lastname: Chen
authors.affiliation: Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, 999077, P. R. China.
authors.forename: Xi
authors.initials: X
authors.lastname: Wan
authors.affiliation: Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, China.
authors.forename: Weiguang
authors.initials: W
authors.lastname: Xie
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies and Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University, Guangzhou, 510275, China.
authors.forename: Jinxiu
authors.initials: J
authors.lastname: Wen
authors.affiliation: Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, 999077, P. R. China.
authors.forename: Zhiwen
authors.initials: Z
authors.lastname: Kang
authors.affiliation: Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China.
authors.forename: Xiaoliang
authors.initials: X
authors.lastname: Zeng
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies and Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University, Guangzhou, 510275, China.
authors.forename: Huanjun
authors.initials: H
authors.lastname: Chen
authors.affiliation: Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, 999077, P. R. China.
authors.forename: Jianbin
authors.initials: J
authors.lastname: Xu
keywords: SKPFM; built-in electric fields; built-in potential; depletion-layer width; heterostructures