title: Interface Passivation and Trap Reduction via a Solution-Based Method for Near-Zero Hysteresis Nanowire Field-Effect Transistors.
abstract: In this letter, we demonstrate a solution-based method for a one-step deposition and surface passivation of the as-grown silicon nanowires (Si NWs). Using N,N-dimethylformamide (DMF) as a mild oxidizing agent, the NWs' surface traps density was reduced by over 2 orders of magnitude from 1×10(13) cm(-2) in pristine NWs to 3.7×10(10) cm(-2) in DMF-treated NWs, leading to a dramatic hysteresis reduction in NW field-effect transistors (FETs) from up to 32 V to a near-zero hysteresis. The change of the polyphenylsilane NW shell stoichiometric composition was confirmed by X-ray photoelectron spectroscopy analysis showing a 35% increase in fully oxidized Si4+ species for DMF-treated NWs compared to dry NW powder. Additionally, a shell oxidation effect induced by DMF resulted is a more stable NW FET performance with steady transistor currents and only 1.5 V hysteresis after 1000 h of air exposure.
authors.forename: Marios
authors.initials: M
authors.lastname: Constantinou
authors.forename: Vlad
authors.initials: V
authors.lastname: Stolojan
authors.forename: Kiron Prabha
authors.initials: KP
authors.lastname: Rajeev
authors.forename: Steven
authors.initials: S
authors.lastname: Hinder
authors.forename: Brett
authors.initials: B
authors.lastname: Fisher
authors.affiliation: Department of Chemical Engineering, Texas Materials Institute and Center for Nano and Molecular Science and Technology, The University of Texas , Austin, Texas 78712-1062, United States.
authors.forename: Timothy D
authors.initials: TD
authors.lastname: Bogart
authors.affiliation: Department of Chemical Engineering, Texas Materials Institute and Center for Nano and Molecular Science and Technology, The University of Texas , Austin, Texas 78712-1062, United States.
authors.forename: Brian A
authors.initials: BA
authors.lastname: Korgel
authors.forename: Maxim
authors.initials: M
authors.lastname: Shkunov
keywords: DMF; XPS; field-effect transistor; hysteresis; interface passivation; interface trap reduction; nanowire interface; silicon nanowires