title: Scalability of carbon-nanotube-based thin film transistors for flexible electronic devices manufactured using an all roll-to-roll gravure printing system.
abstract: To demonstrate that roll-to-roll (R2R) gravure printing is a suitable advanced manufacturing method for flexible thin film transistor (TFT)-based electronic circuits, three different nanomaterial-based inks (silver nanoparticles, BaTiO3 nanoparticles and single-walled carbon nanotubes (SWNTs)) were selected and optimized to enable the realization of fully printed SWNT-based TFTs (SWNT-TFTs) on 150-m-long rolls of 0.25-m-wide poly(ethylene terephthalate) (PET). SWNT-TFTs with 5 different channel lengths, namely, 30, 80, 130, 180, and 230 μm, were fabricated using a printing speed of 8 m/min. These SWNT-TFTs were characterized, and the obtained electrical parameters were related to major mechanical factors such as web tension, registration accuracy, impression roll pressure and printing speed to determine whether these mechanical factors were the sources of the observed device-to-device variations. By utilizing the electrical parameters from the SWNT-TFTs, a Monte Carlo simulation for a 1-bit adder circuit, as a reference, was conducted to demonstrate that functional circuits with reasonable complexity can indeed be manufactured using R2R gravure printing. The simulation results suggest that circuits with complexity, similar to the full adder circuit, can be printed with a 76% circuit yield if threshold voltage (Vth) variations of less than 30% can be maintained.
authors.affiliation: Department of Printed Electronics Engineering, Sunchon National University, Sunchon 540-742, Korea.
authors.forename: Hyunmo
authors.initials: H
authors.lastname: Koo
authors.affiliation: Regional Innovation Center for Printed Electronics, Sunchon National University, Sunchon 540-742, Korea.
authors.forename: Wookyu
authors.initials: W
authors.lastname: Lee
authors.affiliation: Department of Printed Electronics Engineering, Sunchon National University, Sunchon 540-742, Korea.
authors.forename: Younchang
authors.initials: Y
authors.lastname: Choi
authors.affiliation: Department of Printed Electronics Engineering, Sunchon National University, Sunchon 540-742, Korea.
authors.forename: Junfeng
authors.initials: J
authors.lastname: Sun
authors.affiliation: Regional Innovation Center for Printed Electronics, Sunchon National University, Sunchon 540-742, Korea.
authors.forename: Jina
authors.initials: J
authors.lastname: Bak
authors.affiliation: Department of Printed Electronics Engineering, Sunchon National University, Sunchon 540-742, Korea.
authors.forename: Jinsoo
authors.initials: J
authors.lastname: Noh
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley CA 9472033, USA.
authors.forename: Vivek
authors.initials: V
authors.lastname: Subramanian
authors.affiliation: Materials and Structure Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan.
authors.forename: Yasuo
authors.initials: Y
authors.lastname: Azuma
authors.affiliation: Materials and Structure Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan.
authors.forename: Yutaka
authors.initials: Y
authors.lastname: Majima
authors.affiliation: Department of Printed Electronics Engineering, Sunchon National University, Sunchon 540-742, Korea.|Regional Innovation Center for Printed Electronics, Sunchon National University, Sunchon 540-742, Korea.
authors.forename: Gyoujin
authors.initials: G
authors.lastname: Cho