title: Magnetically modulated laser-induced resistance effect observed in Metal-Oxide-Semiconductor structure of Cr/SiO(2)/Si.
abstract: In this study, we report our finding of laser-induced resistance effect in metal-oxide-semiconductor (MOS) structure of Cr/SiO(2)/Si. Under the irradiation of a laser beam, the effect shows a large linear resistance change ratio of 92% with a spatial sensitivity of 0.79 MΩ/mm. In particular, by the application of an external magnetic field perpendicular to the Cr film, the resistance change ratio is increased to 110%. This effect is attributed to the Lorentz force acting on the photo-generated carriers in the inversion layer of MOS structures. The work suggests an approach for the development of new type magnetically modulated photoelectric devices.
authors.forename: Xin
authors.initials: X
authors.lastname: Xie
authors.forename: Shuai
authors.initials: S
authors.lastname: Liu
authors.forename: Meizhen
authors.initials: M
authors.lastname: Huang
authors.forename: Hui
authors.initials: H
authors.lastname: Wang