title: Tuning the Tunneling Rate and Dielectric Response of SAM-Based Junctions via a Single Polarizable Atom.
abstract: The dielectric response and electrical properties of junctions based on self-assembled monolayers (SAMs) of the form S(CH2)11X can be controlled by changing the polarizability of X (here X = H, F, Cl, Br, or I). A 1000-fold increase in the tunneling rate and a four-fold increase of the dielectric constant (ε r ) with increasing polarizability of X are found.
authors.affiliation: Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore.|Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore.
authors.forename: Dandan
authors.initials: D
authors.lastname: Wang
authors.affiliation: Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore.|Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore.
authors.forename: Davide
authors.initials: D
authors.lastname: Fracasso
authors.affiliation: Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore.
authors.forename: Argo
authors.initials: A
authors.lastname: Nurbawono
authors.affiliation: Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore.|Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore.
authors.forename: Harshini V
authors.initials: HV
authors.lastname: Annadata
authors.affiliation: Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore.|Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore.
authors.forename: C S Suchand
authors.initials: CS
authors.lastname: Sangeeth
authors.affiliation: Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore.|Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore.
authors.forename: Li
authors.initials: L
authors.lastname: Yuan
authors.affiliation: Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore.|Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore.
authors.forename: Christian A
authors.initials: CA
authors.lastname: Nijhuis
keywords: EGaIn; dielectric response; molecular electronics; self-assembled monolayers; tunneling junctions