title: Tracking the Effect of Adatom Electronegativity on Systematically Modified AlGaN/GaN Schottky Interfaces.
abstract: The influence of surface modifications on the Schottky barrier height for gallium nitride semiconductor devices is frequently underestimated or neglected in investigations thereof. We show that a strong dependency of Schottky barrier heights for nickel/aluminum-gallium nitride (0001) contacts on the surface terminations exists: a linear correlation of increasing barrier height with increasing electronegativity of superficial adatoms is observed. The negatively charged adatoms compete with the present nitrogen over the available gallium (or aluminum) orbital to form an electrically improved surface termination. The resulting modification of the surface dipoles and hence polarization of the surface termination causes observed band bending. Our findings suggest that the greatest Schottky barrier heights are achieved by increasing the concentration of the most polarized fluorine-gallium (-aluminum) bonds at the surface. An increase in barrier height from 0.7 to 1.1 eV after a 15% fluorine termination is obtained with ideality factors of 1.10 ± 0.05. The presence of surface dipoles that are changing the surface energy is proven by the sessile drop method as the electronegativity difference and polarization influences the contact angle. The extracted decrease in the Lifshitz-van-der-Waals component from 48.8 to 40.4 mJ/m(2) with increasing electronegativity and concentration of surface adatoms confirms the presence of increasing surface dipoles: as the polarizability of equally charged anions decreases with increasing electronegativity, the diiodomethane contact angles increase significantly from 14° up to 39° after the 15% fluorine termination. Therefore, a linear correlation between increasing anion electronegativity of the (Al)GaN termination and total surface energy within a 95% confidence interval is obtained. Furthermore, our results reveal a generally strong Lewis basicity of (Al)GaN surfaces explaining the high chemical inertness of the surfaces.
authors.affiliation: Infineon Technologies Austria AG , Siemensstr. 2-5, 9500 Villach, Austria.|Institute of Chemistry and CINSaT, University of Kassel , Heinrich-Plett-Str. 40, 34132 Kassel, Germany.
authors.forename: Maria
authors.initials: M
authors.lastname: Reiner
authors.affiliation: Institute of Chemistry and CINSaT, University of Kassel , Heinrich-Plett-Str. 40, 34132 Kassel, Germany.
authors.forename: Rudolf
authors.initials: R
authors.lastname: Pietschnig
authors.affiliation: Infineon Technologies Austria AG , Siemensstr. 2-5, 9500 Villach, Austria.
authors.forename: Clemens
authors.initials: C
authors.lastname: Ostermaier
keywords: AlGaN; Schottky barrier height; adatoms; contact angle; interface dipole; surface energy; surfaces modification