title: Si Donor Incorporation in GaN Nanowires.
abstract: With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 μm in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10(2) to 10(-3) Ω·cm, and a carrier concentration from 10(17) to 10(20) cm(-3). Field effect transistor (FET) measurements combined with finite element simulation by NextNano(3) software have put in evidence the high mobility of carriers in the nonintentionally doped (NID) NWs.
authors.affiliation: Univ. Grenoble Alpes , F-38000 Grenoble, France.|CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group , F-38000 Grenoble, France.|CNRS, Inst. NEEL , F-38042 Grenoble, France.
authors.forename: Zhihua
authors.initials: Z
authors.lastname: Fang
authors.affiliation: CEA, INAC , MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, France.
authors.forename: Eric
authors.initials: E
authors.lastname: Robin
authors.affiliation: Materials Science Institute, University of Valencia , ES-46071 Valencia, Spain.
authors.forename: Elena
authors.initials: E
authors.lastname: Rozas-Jiménez
authors.affiliation: Materials Science Institute, University of Valencia , ES-46071 Valencia, Spain.
authors.forename: Ana
authors.initials: A
authors.lastname: Cros
authors.affiliation: Univ. Grenoble Alpes , F-38000 Grenoble, France.|CNRS, Inst. NEEL , F-38042 Grenoble, France.
authors.forename: Fabrice
authors.initials: F
authors.lastname: Donatini
authors.affiliation: CEA, INAC , MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, France.
authors.forename: Nicolas
authors.initials: N
authors.lastname: Mollard
authors.affiliation: Univ. Grenoble Alpes , F-38000 Grenoble, France.|CNRS, Inst. NEEL , F-38042 Grenoble, France.|Institut Universitaire de France , 103 boulevard Saint-Michel, F-75005 Paris, France.
authors.forename: Julien
authors.initials: J
authors.lastname: Pernot
authors.affiliation: Univ. Grenoble Alpes , F-38000 Grenoble, France.|CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group , F-38000 Grenoble, France.
authors.forename: Bruno
authors.initials: B
authors.lastname: Daudin
keywords: EDX; GaN; Si doping; electron mobility; field effect transistor; four probe resistivity; nanowires