title: All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS2 /Graphene Heterostructures.
abstract: A facile all-chemical vapor deposition approach is designed, which allows both sequentially grown Gr and monolayer MoS2 in the same growth process, thus allowing the direct construction of MoS2 /Gr vertical heterostructures on Au foils. A weak n-doping effect and an intrinsic bandgap of MoS2 are obtained from MoS2 /Gr/Au via scanning tunneling microscopy and spectroscopy characterization. The exciton binding energy is accurately deduced by combining photoluminescence measurements.
authors.affiliation: Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China.|Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
authors.forename: Jianping
authors.initials: J
authors.lastname: Shi
authors.affiliation: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.|National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
authors.forename: Mengxi
authors.initials: M
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China.
authors.forename: Jinxiu
authors.initials: J
authors.lastname: Wen
authors.affiliation: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China.
authors.forename: Xibiao
authors.initials: X
authors.lastname: Ren
authors.affiliation: Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China.|Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
authors.forename: Xiebo
authors.initials: X
authors.lastname: Zhou
authors.affiliation: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
authors.forename: Qingqing
authors.initials: Q
authors.lastname: Ji
authors.affiliation: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
authors.forename: Donglin
authors.initials: D
authors.lastname: Ma
authors.affiliation: Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China.|Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China.
authors.forename: Chuanhong
authors.initials: C
authors.lastname: Jin
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China.
authors.forename: Huanjun
authors.initials: H
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China.
authors.forename: Shaozhi
authors.initials: S
authors.lastname: Deng
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China.
authors.forename: Ningsheng
authors.initials: N
authors.lastname: Xu
authors.affiliation: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
authors.forename: Zhongfan
authors.initials: Z
authors.lastname: Liu
authors.affiliation: Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China.|Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
authors.forename: Yanfeng
authors.initials: Y
authors.lastname: Zhang
mesh_terms: D060326:Chemistry Techniques, Synthetic; D004220:Disulfides / Q000737:chemistry*; D006046:Gold / Q000737:chemistry; D006108:Graphite / Q000737:chemistry*; D008958:Models, Molecular; D008968:Molecular Conformation; D008982:Molybdenum / Q000737:chemistry*; D013696:Temperature; D014835:Volatilization
chemical_list: D004220:Disulfides; D006046:Gold; D006108:Graphite; D008982:Molybdenum; C082964:molybdenum disulfide
keywords: exciton binding energies; graphene heterostructures; intrinsic bandgaps; quasi-freestanding MoS2; scanning tunneling microscopy