title: Designing the shape evolution of SnSe2 nanosheets and their optoelectronic properties.
abstract: Layered chalcogenide materials (LCMs) are emerging materials in recent years for their great potential in applications of electronics and optoelectronics. As a member of LCMs, SnSe2, an n-type semiconductor with a band gap of ∼1.0 eV, is of great value to explore. In this paper, we develop a facile CVD method, for the first time, to synthesize diverse shaped SnSe2 and square SnSe nanosheets (NSs) on SiO2/Si substrates. To the best of our knowledge, the thickness of as-grown SnSe2 is among the thinnest ones synthesized by CVD methods on various substrates. What's more, photodetectors are fabricated to investigate the optoelectronic properties of SnSe2. The on/off ratio of photoswitches reaches 100 under the illumination of an 800 nm laser. This work will pave a new pathway to synthesize LCM nanostructures, shed light on the shape evolution during the growth process and expand the candidates for high performance optoelectronic devices.
authors.affiliation: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, 100190, Beijing, P. R. China. hej@nanoctr.cn.
authors.forename: Yun
authors.initials: Y
authors.lastname: Huang
authors.forename: Kai
authors.initials: K
authors.lastname: Xu
authors.forename: Zhenxing
authors.initials: Z
authors.lastname: Wang
authors.forename: Tofik Ahmed
authors.initials: TA
authors.lastname: Shifa
authors.forename: Qisheng
authors.initials: Q
authors.lastname: Wang
authors.forename: Feng
authors.initials: F
authors.lastname: Wang
authors.forename: Chao
authors.initials: C
authors.lastname: Jiang
authors.forename: Jun
authors.initials: J
authors.lastname: He