title: High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal-Organic Chemical Vapor Deposition.
abstract: We report on the first demonstration of InAs1-xSbx nanowires grown by catalyst-free selective-area metal-organic chemical vapor deposition (SA-MOCVD). Antimony composition as high as 15 % is achieved, with strong photoluminescence at all compositions. The quality of the material is assessed by comparing the photoluminescence (PL) peak full-width at half-max (fwhm) of the nanowires to that of epitaxially grown InAsSb thin films on InAs. We find that the fwhm of the nanowires is only a few meV broader than epitaxial films, and a similar trend of relatively constant fwhm for increasing antimony composition is observed. Furthermore, the PL peak energy shows a strong dependence on temperature, suggesting wave-vector conserving transitions are responsible for the observed PL in spite of lattice mismatched growth on InAs substrate. This study shows that high-quality InAsSb nanowires can be grown by SA-MOCVD on lattice mismatched substrate, resulting in material suitable for infrared detectors and high-performance nanoelectronic devices.
authors.affiliation: Electrical Engineering Department, ‡Materials Science Department, and §California NanoSystems Institute, University of California at Los Angeles , Los Angeles, California 90095, United States.
authors.forename: Alan C
authors.initials: AC
authors.lastname: Farrell
authors.affiliation: Electrical Engineering Department, ‡Materials Science Department, and §California NanoSystems Institute, University of California at Los Angeles , Los Angeles, California 90095, United States.
authors.forename: Wook-Jae
authors.initials: WJ
authors.lastname: Lee
authors.affiliation: Electrical Engineering Department, ‡Materials Science Department, and §California NanoSystems Institute, University of California at Los Angeles , Los Angeles, California 90095, United States.
authors.forename: Pradeep
authors.initials: P
authors.lastname: Senanayake
authors.affiliation: Electrical Engineering Department, ‡Materials Science Department, and §California NanoSystems Institute, University of California at Los Angeles , Los Angeles, California 90095, United States.
authors.forename: Michael A
authors.initials: MA
authors.lastname: Haddad
authors.affiliation: Electrical Engineering Department, ‡Materials Science Department, and §California NanoSystems Institute, University of California at Los Angeles , Los Angeles, California 90095, United States.
authors.forename: Sergey V
authors.initials: SV
authors.lastname: Prikhodko
authors.affiliation: Electrical Engineering Department, ‡Materials Science Department, and §California NanoSystems Institute, University of California at Los Angeles , Los Angeles, California 90095, United States.
authors.forename: Diana L
authors.initials: DL
authors.lastname: Huffaker
keywords: InAsSb; Nanowires; catalyst-free; photoluminescence; selective-area epitaxy