title: Two-dimensional molybdenum disulphide nanosheet-covered metal nanoparticle array as a floating gate in multi-functional flash memories.
abstract: Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 10(4) s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure.
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China. val.roy@cityu.edu.hk.
authors.forename: Su-Ting
authors.initials: ST
authors.lastname: Han
authors.forename: Ye
authors.initials: Y
authors.lastname: Zhou
authors.forename: Bo
authors.initials: B
authors.lastname: Chen
authors.forename: Li
authors.initials: L
authors.lastname: Zhou
authors.forename: Yan
authors.initials: Y
authors.lastname: Yan
authors.forename: Hua
authors.initials: H
authors.lastname: Zhang
authors.forename: V A L
authors.initials: VA
authors.lastname: Roy