title: Semiconductor-Insulator-Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure.
abstract: We propose a semiconductor-insulator-semiconductor (SIS) heterojunction diode consisting of monolayer (1-L) MoS2, hexagonal boron nitride (h-BN), and epitaxial p-GaN that can be applied to high-performance nanoscale optoelectronics. The layered materials of 1-L MoS2 and h-BN, grown by chemical vapor deposition, were vertically stacked by a wet-transfer method on a p-GaN layer. The final structure was verified by confocal photoluminescence and Raman spectroscopy. Current-voltage (I-V) measurements were conducted to compare the device performance with that of a more classical p-n structure. In both structures (the p-n and SIS heterojunction diode), clear current-rectifying characteristics were observed. In particular, a current and threshold voltage were obtained for the SIS structure that was higher compared to that of the p-n structure. This indicated that tunneling is the predominant carrier transport mechanism. In addition, the photoresponse of the SIS structure induced by the illumination of visible light was observed by photocurrent measurements.
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Laboratoire de Nanotechnologie et d'Instrumentation Optique, Institut Charles Delaunay, CNRS-UMR 6281, Université de Technologie de Troyes , BP 2060, 10010 Troyes, France.
authors.forename: Hyun
authors.initials: H
authors.lastname: Jeong
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Seungho
authors.initials: S
authors.lastname: Bang
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Hye Min
authors.initials: HM
authors.lastname: Oh
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Hyeon Jun
authors.initials: HJ
authors.lastname: Jeong
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Sung-Jin
authors.initials: SJ
authors.lastname: An
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Gang Hee
authors.initials: GH
authors.lastname: Han
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Hyun
authors.initials: H
authors.lastname: Kim
authors.affiliation: Department of Energy and Materials Engineering, Dongguk University , Seoul 100-715, Republic of Korea.
authors.forename: Ki Kang
authors.initials: KK
authors.lastname: Kim
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Jin Cheol
authors.initials: JC
authors.lastname: Park
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Young Hee
authors.initials: YH
authors.lastname: Lee
authors.affiliation: Laboratoire de Nanotechnologie et d'Instrumentation Optique, Institut Charles Delaunay, CNRS-UMR 6281, Université de Technologie de Troyes , BP 2060, 10010 Troyes, France.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Gilles
authors.initials: G
authors.lastname: Lerondel
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Mun Seok
authors.initials: MS
authors.lastname: Jeong
keywords: GaN; carrier tunneling; h-BN; monolayer MoS2; semiconductor−insulator−semiconductor diode