title: Interaction at the silicon/transition metal oxide heterojunction interface and its effect on the photovoltaic performance.
abstract: The interfacial reaction and energy level alignment at the Si/transition metal oxide (TMO, including MoO3-x, V2O5-x, WO3-x) heterojunction are systematically investigated. We confirm that the interfacial reaction appears during the thermal deposition of TMO, with the reaction extent increasing from MoO3-x, to V2O5-x, and to WO3-x. The reaction causes the surface oxidation of silicon for faster electron/hole recombination, and the reduction of TMO for effective hole collection. The photovoltaic performance of the Si/TMO heterojunction devices is affected by the interface reaction. MoO3-x are the best hole selecting materials that induce least surface oxidation but strongest reduction. Compared with H-passivation, methyl group passivation is an effective way to reduce the interface reaction and improve the interfacial energy level alignment for better electron and hole collection.
authors.affiliation: Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, P. R. China. wgxie@email.jnu.edu.cn.
authors.forename: Zhimin
authors.initials: Z
authors.lastname: Liang
authors.forename: Mingze
authors.initials: M
authors.lastname: Su
authors.forename: Yangyang
authors.initials: Y
authors.lastname: Zhou
authors.forename: Li
authors.initials: L
authors.lastname: Gong
authors.forename: Chuanxi
authors.initials: C
authors.lastname: Zhao
authors.forename: Keqiu
authors.initials: K
authors.lastname: Chen
authors.forename: Fangyan
authors.initials: F
authors.lastname: Xie
authors.forename: Weihong
authors.initials: W
authors.lastname: Zhang
authors.forename: Jian
authors.initials: J
authors.lastname: Chen
authors.forename: Pengyi
authors.initials: P
authors.lastname: Liu
authors.forename: Weiguang
authors.initials: W
authors.lastname: Xie