title: Complementary metal-oxide-semiconductor compatible 1060 nm photodetector with ultrahigh gain under low bias.
abstract: Falling on the tail of the absorption spectrum of silicon, 1060 nm Si detectors often suffer from low responsivity unless an exceedingly thick absorption layer is used, a design that requires high operation voltage and high purity epitaxial or substrate material. We report an all-silicon 1060 nm detector with ultrahigh gain to allow for low operation voltage (<4  V) and thin (200 nm) effective absorption layer, using the recently discovered cycling excitation process. With 1% external quantum efficiency, a responsivity of 93 A/W was demonstrated in a p/n junction device compatible with the complementary metal-oxide-semiconductor process.
authors.forename: David
authors.initials: D
authors.lastname: Hall
authors.forename: Baoxia
authors.initials: B
authors.lastname: Li
authors.forename: Yu-Hsin
authors.initials: YH
authors.lastname: Liu
authors.forename: Lujiang
authors.initials: L
authors.lastname: Yan
authors.forename: Yu-Hwa
authors.initials: YH
authors.lastname: Lo