title: 750 nm 1.5 W frequency-doubled semiconductor disk laser with a 44 nm tuning range.
abstract: We demonstrate 1.5 W of output power at the wavelength of 750 nm by intracavity frequency doubling a wafer-fused semiconductor disk laser diode-pumped at 980 nm. An optical-to-optical efficiency of 8.3% was achieved using a bismuth borate crystal. The wavelength of the doubled emission could be tuned from 720 to 764 nm with an intracavity birefringent plate. The beam quality parameter M2of the laser output was measured to be below 1.5 at all pump powers. The laser is a promising tool for biomedical applications that can take advantage of the large penetration depth of light in tissue in the 700-800 nm spectral range.
authors.forename: Esa J
authors.initials: EJ
authors.lastname: Saarinen
authors.forename: Jari
authors.initials: J
authors.lastname: Lyytikäinen
authors.forename: Sanna
authors.initials: S
authors.lastname: Ranta
authors.forename: Antti
authors.initials: A
authors.lastname: Rantamäki
authors.forename: Alexei
authors.initials: A
authors.lastname: Sirbu
authors.forename: Vladimir
authors.initials: V
authors.lastname: Iakovlev
authors.forename: Eli
authors.initials: E
authors.lastname: Kapon
authors.forename: Oleg G
authors.initials: OG
authors.lastname: Okhotnikov
mesh_terms: D007834:Lasers; D055620:Optical Phenomena; D012666:Semiconductors