title: Continuous wave terahertz radiation from antennas fabricated on C¹²-irradiated semi-insulating GaAs.
abstract: We demonstrate continuous wave (CW) terahertz generation from antennas fabricated on C12-irradiated semi-insulating (SI) GaAs substrates. The dark current drawn by the antennas fabricated on irradiated substrates is ∼3 to 4 orders of magnitude lower compared to antennas fabricated on un-irradiated substrates, while the photocurrents decrease by only ∼1.5 orders of magnitude. This can be attributed to the strong reduction of the carrier lifetime that is 2.5 orders of magnitude, with values around τ(rec)=0.2  ps. Reduced thermal heating allows for higher bias voltages to the irradiated antenna devices resulting in higher CW terahertz power, just slightly lower than that of low-temperature grown GaAs (LT GaAs)at similar excitation conditions.
authors.forename: Prathmesh
authors.initials: P
authors.lastname: Deshmukh
authors.forename: M
authors.initials: M
authors.lastname: Mendez-Aller
authors.forename: Abhishek
authors.initials: A
authors.lastname: Singh
authors.forename: Sanjoy
authors.initials: S
authors.lastname: Pal
authors.forename: S S
authors.initials: SS
authors.lastname: Prabhu
authors.forename: Vandana
authors.initials: V
authors.lastname: Nanal
authors.forename: R G
authors.initials: RG
authors.lastname: Pillay
authors.forename: G H
authors.initials: GH
authors.lastname: Döhler
authors.forename: S
authors.initials: S
authors.lastname: Preu