title: Fabrication of 2D Heterojunction in Graphene via Low Energy N2(+) Irradiation.
abstract: Substitutional doping in graphene is locally induced with very low energy nitrogen ions. Irradiated and nonirradiated areas exhibit different charge carrier densities and are separated by a sharp boundary, stable up to 750 °C. The way towards lithographic control of the electronic properties of graphene by ion irradiation is paved, providing a proof of principle for the fabrication of 2D graphene-based heterojunctions.
authors.affiliation: Elettra-Sincrotrone Trieste S.C.p.A, S.S.14-km 163.5, Area Science Park Basovizza, 34149, Trieste, Italy.
authors.forename: Alessandro
authors.initials: A
authors.lastname: Sala
authors.affiliation: Department of Physics, University of Trieste, Via Valerio 2, 34127, Trieste, Italy.|Peter Grünberg Institute (PGI-6), Research Center Jülich, 52425, Jülich, Germany.
authors.forename: Giovanni
authors.initials: G
authors.lastname: Zamborlini
authors.affiliation: Elettra-Sincrotrone Trieste S.C.p.A, S.S.14-km 163.5, Area Science Park Basovizza, 34149, Trieste, Italy.
authors.forename: Tevfik Onur
authors.initials: TO
authors.lastname: Menteş
authors.affiliation: Elettra-Sincrotrone Trieste S.C.p.A, S.S.14-km 163.5, Area Science Park Basovizza, 34149, Trieste, Italy.
authors.forename: Andrea
authors.initials: A
authors.lastname: Locatelli
keywords: 2D circuits; graphene; heterojunctions; ion implantation; localized doping