title: A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors.
abstract: We designed a nickel-assisted process to obtain graphene with sheet resistance as low as 80 Ω square(-1) from silicon carbide films on Si wafers with highly enhanced surface area. The silicon carbide film acts as both a template and source of graphitic carbon, while, simultaneously, the nickel induces porosity on the surface of the film by forming silicides during the annealing process which are subsequently removed. As stand-alone electrodes in supercapacitors, these transfer-free graphene-on-chip samples show a typical double-layer supercapacitive behaviour with gravimetric capacitance of up to 65 F g(-1). This work is the first attempt to produce graphene with high surface area from silicon carbide thin films for energy storage at the wafer-level and may open numerous opportunities for on-chip integrated energy storage applications.
authors.affiliation: Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD, Australia.
authors.forename: Mohsin
authors.initials: M
authors.lastname: Ahmed
authors.forename: Mohamad
authors.initials: M
authors.lastname: Khawaja
authors.forename: Marco
authors.initials: M
authors.lastname: Notarianni
authors.forename: Bei
authors.initials: B
authors.lastname: Wang
authors.forename: Dayle
authors.initials: D
authors.lastname: Goding
authors.forename: Bharati
authors.initials: B
authors.lastname: Gupta
authors.forename: John J
authors.initials: JJ
authors.lastname: Boeckl
authors.forename: Arash
authors.initials: A
authors.lastname: Takshi
authors.forename: Nunzio
authors.initials: N
authors.lastname: Motta
authors.forename: Stephen E
authors.initials: SE
authors.lastname: Saddow
authors.forename: Francesca
authors.initials: F
authors.lastname: Iacopi