title: Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation.
abstract: A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2 , and multilayered samples are less susceptible than monolayer ones.
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Jingli
authors.initials: J
authors.lastname: Wang
authors.affiliation: WPI Center for Materials Nanoarchitechtonics and International Center for Young Scientist, National Institute for Materials Science, Tsukuba, Ibaraki, 305-0044, Japan.
authors.forename: Songlin
authors.initials: S
authors.lastname: Li
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Xuming
authors.initials: X
authors.lastname: Zou
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR, 999077, China.
authors.forename: Johnny
authors.initials: J
authors.lastname: Ho
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Liao
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Xiangheng
authors.initials: X
authors.lastname: Xiao
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Changzhong
authors.initials: C
authors.lastname: Jiang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
authors.forename: Weida
authors.initials: W
authors.lastname: Hu
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
authors.forename: Jianlu
authors.initials: J
authors.lastname: Wang
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Jinchai
authors.initials: J
authors.lastname: Li
keywords: MoS2 transistors; scattering; thickness dependence; top gated, ozone pretreatments, transistors