title: Excellent nonlinearity of a selection device based on anti-series connected Zener diodes for ultrahigh-density bipolar RRAM arrays.
abstract: A crossbar array is usually used for the high-density application of a resistive random access memory (RRAM) device. However, the cross-talk interference limits the increase in the integration density. In this paper, anti-series connected Zener diodes as a selection device are proposed for bipolar RRAM arrays. Simulation results show that, by using the anti-series connected Zener diodes as a selection device, the readout margin is sufficiently improved compared to that obtained without a selection device or with anti-parallel connected diodes as the selection device. The maximum size of the crossbar arrays with anti-series connected Zener diodes as a selection device over 1 TB is estimated by theoretical simulation. In addition, the feasibility of using the anti-series connected Zener diodes as a selection device for bipolar RRAM is demonstrated experimentally. These results indicate that anti-series connected Zener diodes as a selection device opens up great opportunities to realize ultrahigh-density bipolar RRAM arrays.
authors.affiliation: Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730 000, People's Republic of China.
authors.forename: Yingtao
authors.initials: Y
authors.lastname: Li
authors.forename: Rongrong
authors.initials: R
authors.lastname: Li
authors.forename: Liping
authors.initials: L
authors.lastname: Fu
authors.forename: Xiaoping
authors.initials: X
authors.lastname: Gao
authors.forename: Yang
authors.initials: Y
authors.lastname: Wang
authors.forename: Chunlan
authors.initials: C
authors.lastname: Tao