title: Surface Decoration on Polymeric Gate Dielectrics for Flexible Organic Field-Effect Transistors via Hydroxylation and Subsequent Monolayer Self-Assembly.
abstract: A simple photochemical reaction based on confined photocatalytic oxidation (CPO) treatment and hydrolysis was employed to efficiently convert C-H bonds into C-OH groups on polymeric material surfaces, followed by investigation of monolayer self-assembly decoration on polymeric dielectrics via chemical bonding for the organic field-effect transistors (OFETs) applications. This method is a low temperature process and has negligible etching effect on polymeric dielectric layers. Various types of self-assembled monolayers have been tested and successfully attached onto the hydroxylated polymeric dielectric surfaces through chemical bonding, ensuring the stability of decorated functional films during the subsequent device fabrication consisting of solution processing of the polymer active layer. With the surface decoration of functional groups, both n-type and p-type polymers exhibit enhanced carrier mobilities in the unipolar OFETs. In addition, enhanced and balanced mobilities are obtained in the ambipolar OFETs with the blend of polymer semiconductors. The anchored self-assembled monolayers on the dielectric surfaces dramatically preclude the solvent effect, thus enabling an improvement of carrier mobility up to 2 orders of magnitude. Our study opens a way of targeted modifications of polymeric surfaces and related applications in organic electronics.
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong , Tat Chee Avenue, Kowloon, Hong Kong SAR.
authors.forename: Yan
authors.initials: Y
authors.lastname: Yan
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong , Tat Chee Avenue, Kowloon, Hong Kong SAR.
authors.forename: Long-Biao
authors.initials: LB
authors.lastname: Huang
authors.affiliation: Institute for Advanced Study, Shenzhen University , Shenzhen, Guangdong 508060, People's Republic of China.
authors.forename: Ye
authors.initials: Y
authors.lastname: Zhou
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong , Tat Chee Avenue, Kowloon, Hong Kong SAR.
authors.forename: Su-Ting
authors.initials: ST
authors.lastname: Han
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong , Tat Chee Avenue, Kowloon, Hong Kong SAR.
authors.forename: Li
authors.initials: L
authors.lastname: Zhou
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong , Tat Chee Avenue, Kowloon, Hong Kong SAR.
authors.forename: Qijun
authors.initials: Q
authors.lastname: Sun
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong , Tat Chee Avenue, Kowloon, Hong Kong SAR.
authors.forename: Jiaqing
authors.initials: J
authors.lastname: Zhuang
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong , Tat Chee Avenue, Kowloon, Hong Kong SAR.|Guangzhou Institute of Advanced Technology, Chinese Academy of Sciences , Guangzhou 511458, People's Republic of China.
authors.forename: Haiyan
authors.initials: H
authors.lastname: Peng
authors.affiliation: Department of Chemistry, Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong.
authors.forename: He
authors.initials: H
authors.lastname: Yan
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong , Tat Chee Avenue, Kowloon, Hong Kong SAR.
authors.forename: V A L
authors.initials: VA
authors.lastname: Roy
keywords: SAMs; ambipolar; field-effect transistors; hydroxylation; solution process