title: Hybrid Modulation-Doping of Solution-Processed Ultrathin Layers of ZnO Using Molecular Dopants.
abstract: An alternative doping approach that exploits the use of organic donor/acceptor molecules for the effective tuning of the free electron concentration in quasi-2D ZnO transistor channel layers is reported. The method relies on the deposition of molecular dopants/formulations directly onto the ultrathin ZnO channels. Through careful choice of materials combinations, electron transfer from the dopant molecule to ZnO and vice versa is demonstrated.
authors.affiliation: Department of Physics and Centre for Plastic Electronics, Imperial College London South Kensington, London, SW7 2AZ, UK.|Department of Materials Science, Nanomaterials for Optoelectronics Group, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058, Erlangen, Germany.|Institute for Physical Chemistry, University Heidelberg, 69120, Heidelberg, Germany.
authors.forename: Stefan P
authors.initials: SP
authors.lastname: Schießl
authors.affiliation: Department of Physics and Centre for Plastic Electronics, Imperial College London South Kensington, London, SW7 2AZ, UK.
authors.forename: Hendrik
authors.initials: H
authors.lastname: Faber
authors.affiliation: Department of Physics and Centre for Plastic Electronics, Imperial College London South Kensington, London, SW7 2AZ, UK.
authors.forename: Yen-Hung
authors.initials: YH
authors.lastname: Lin
authors.affiliation: Department of Physics and Centre for Plastic Electronics, Imperial College London South Kensington, London, SW7 2AZ, UK.
authors.forename: Stephan
authors.initials: S
authors.lastname: Rossbauer
authors.affiliation: Advanced Nanofabrication, Imaging and Characterization Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
authors.forename: Qingxiao
authors.initials: Q
authors.lastname: Wang
authors.affiliation: Materials Science and Engineering, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.
authors.forename: Kui
authors.initials: K
authors.lastname: Zhao
authors.affiliation: Materials Science and Engineering, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.
authors.forename: Aram
authors.initials: A
authors.lastname: Amassian
authors.affiliation: Department of Materials Science, Nanomaterials for Optoelectronics Group, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058, Erlangen, Germany.|Institute for Physical Chemistry, University Heidelberg, 69120, Heidelberg, Germany.
authors.forename: Jana
authors.initials: J
authors.lastname: Zaumseil
authors.affiliation: Department of Physics and Centre for Plastic Electronics, Imperial College London South Kensington, London, SW7 2AZ, UK.
authors.forename: Thomas D
authors.initials: TD
authors.lastname: Anthopoulos
keywords: doping; metal oxide semiconductors; modulation doping; molecular doping; organic semiconductors