title: Enhanced stability of black phosphorus field-effect transistors with SiO₂ passivation.
abstract: Few-layer black phosphorus (BP) has attracted much attention due to its high mobility and suitable band gap for potential applic5ations in optoelectronics and flexible devices. However, its instability under ambient conditions limits its practical applications. Our investigations indicate that by passivation of the mechanically exfoliated BP flakes with a SiO2 layer, the fabricated BP field-effect transistors (FETs) exhibit greatly enhanced environmental stability. Compared to the unpassivated BP devices, which show a fast drop of on/off current ratio by a factor of 10 after one week of ambient exposure, the SiO2-passivated BP devices display a high retained on/off current ratio of over 600 after one week of exposure, just a little lower than the initial value of 810. Our investigations provide an effective route to passivate the few-layer BPs for enhancement of their environmental stability.
authors.affiliation: Department of Physics, Beihang University, Beijing 100191, People's Republic of China. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, People's Republic of China.
authors.forename: Bensong
authors.initials: B
authors.lastname: Wan
authors.forename: Bingchao
authors.initials: B
authors.lastname: Yang
authors.forename: Yue
authors.initials: Y
authors.lastname: Wang
authors.forename: Junying
authors.initials: J
authors.lastname: Zhang
authors.forename: Zhongming
authors.initials: Z
authors.lastname: Zeng
authors.forename: Zhongyuan
authors.initials: Z
authors.lastname: Liu
authors.forename: Wenhong
authors.initials: W
authors.lastname: Wang