title: Tuning nanosecond transient absorption in a-Ge₂₅As₁₀Se₆₅ thin films via background illumination.
abstract: In this Letter, we report for the first time, to the best of our knowledge, continuous-wave laser background illumination (BGI) as a simple and yet useful tool to tune nanosecond transient absorption (TA) in a-Ge25As10Se65 thin films. In our experiments, we observed remarkable blueshift in TA as a function of the BGI intensity. Strikingly, relaxations of TA in background-illuminated samples are much faster than the as-prepared samples. This observation provides new insights into the bond-breaking mechanism. Further, decay time constants of TA are wavelength dependent, which signifies that excited carriers have a longer lifetime in deep traps than in shallow traps.
authors.forename: Pritam
authors.initials: P
authors.lastname: Khan
authors.forename: Rajesh Kumar
authors.initials: RK
authors.lastname: Yadav
authors.forename: Arinjoy
authors.initials: A
authors.lastname: Bhattacharya
authors.forename: Abin
authors.initials: A
authors.lastname: Joshy
authors.forename: J
authors.initials: J
authors.lastname: Aneesh
authors.forename: K V
authors.initials: KV
authors.lastname: Adarsh