title: MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation.
abstract: By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can be controlled by the aluminization parameters. The influence of growth conditions on the morphologies of AlN NWs is carefully investigated. Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms. The films are proved to be Al-polar different from the N-polar AlN NWs, which can explain the absence of newly formed NWs. Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films.
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People's Republic of China. eyx11@mails.tsinghua.edu.cn.
authors.forename: Yanxiong
authors.initials: Y
authors.lastname: E
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People's Republic of China. zbhao@tsinghua.edu.cn.
authors.forename: Zhibiao
authors.initials: Z
authors.lastname: Hao
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People's Republic of China. yjd13@mails.tsinghua.edu.cn.
authors.forename: Jiadong
authors.initials: J
authors.lastname: Yu
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People's Republic of China. wu_c08@163.com.
authors.forename: Chao
authors.initials: C
authors.lastname: Wu
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People's Republic of China. liurunze2yy@163.com.
authors.forename: Runze
authors.initials: R
authors.lastname: Liu
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People's Republic of China. wanglai@tsinghua.edu.cn.
authors.forename: Lai
authors.initials: L
authors.lastname: Wang
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People's Republic of China. bxiong@tsinghua.edu.cn.
authors.forename: Bing
authors.initials: B
authors.lastname: Xiong
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People's Republic of China. wangjian@tsinghua.edu.cn.
authors.forename: Jian
authors.initials: J
authors.lastname: Wang
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People's Republic of China. yjhan@tsinghua.edu.cn.
authors.forename: Yanjun
authors.initials: Y
authors.lastname: Han
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People's Republic of China. czsun@tsinghua.edu.cn.
authors.forename: Changzheng
authors.initials: C
authors.lastname: Sun
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People's Republic of China. luoy@tsinghua.edu.cn.
authors.forename: Yi
authors.initials: Y
authors.lastname: Luo
keywords: AlN nanowires; Crystal polarity; Molecular beam epitaxy; Nucleation