title: Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing.
abstract: Ion-induced damage and intermixing was evaluated in InGaN/GaN multi-quantum wells (MQWs) using 35 keV N(+) implantation at room temperature. In situ ion channeling measurements show that damage builds up with a similar trend for In and Ga atoms, with a high threshold for amorphization. The extended defects induced during the implantation, basal and prismatic stacking faults, are uniformly distributed across the quantum well structure. Despite the extremely high fluences used (up to 4 × 10(16) cm(-2)), the InGaN MQWs exhibit a high stability against ion beam mixing.
authors.affiliation: Instituto Superior Técnico, Universidade de Lisboa, Campus Tecnológico e Nuclear, Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal. Departamento de Física Aplicada y Centro de Microanálisis of Materiales, Universidad Autónoma de Madrid, E-28049 Madrid, Spain.
authors.forename: A
authors.initials: A
authors.lastname: Redondo-Cubero
authors.forename: K
authors.initials: K
authors.lastname: Lorenz
authors.forename: E
authors.initials: E
authors.lastname: Wendler
authors.forename: S
authors.initials: S
authors.lastname: Magalhães
authors.forename: E
authors.initials: E
authors.lastname: Alves
authors.forename: D
authors.initials: D
authors.lastname: Carvalho
authors.forename: T
authors.initials: T
authors.lastname: Ben
authors.forename: F M
authors.initials: FM
authors.lastname: Morales
authors.forename: R
authors.initials: R
authors.lastname: García
authors.forename: K P
authors.initials: KP
authors.lastname: O'Donnell
authors.forename: C
authors.initials: C
authors.lastname: Wetzel