title: Electrical Instability Induced by Electron Trapping in Low-Bandgap Donor-Acceptor Polymer Field-Effect Transistors.
abstract: The mechanism of electrical instability and the double slope of p-type organic field-effect transistors (OFETs) fabricated from low-bandgap donor-acceptor copolymers are resolved. Those polymers enable electron conduction in the device, which leads to electron trapping and consequent formation of -SiO(-). This causes a turn-on voltage shift, hole-mobility increase, and double-slope occurrence. These findings tremendously impact the molecular design and device engineering of OFETs.
authors.affiliation: Center for Polymer and Organic Solids, Mitsubishi Chemical Center for Advanced Materials, University of California, Santa Barbara, CA, 93106, USA.
authors.forename: Hung
authors.initials: H
authors.lastname: Phan
authors.affiliation: Center for Polymer and Organic Solids, Mitsubishi Chemical Center for Advanced Materials, University of California, Santa Barbara, CA, 93106, USA.
authors.forename: Ming
authors.initials: M
authors.lastname: Wang
authors.affiliation: Center for Polymer and Organic Solids, Mitsubishi Chemical Center for Advanced Materials, University of California, Santa Barbara, CA, 93106, USA.
authors.forename: Guillermo C
authors.initials: GC
authors.lastname: Bazan
authors.affiliation: Center for Polymer and Organic Solids, Mitsubishi Chemical Center for Advanced Materials, University of California, Santa Barbara, CA, 93106, USA.
authors.forename: Thuc-Quyen
authors.initials: TQ
authors.lastname: Nguyen
keywords: donor-acceptor; double slopes; electron trapping; polymer field-effect transistors; stability