title: 2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits.
abstract: The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W"-shaped quantum well, also allowing for laser integration on the same platform.
authors.forename: Ruijun
authors.initials: R
authors.lastname: Wang
authors.forename: Stephan
authors.initials: S
authors.lastname: Sprengel
authors.forename: Muhammad
authors.initials: M
authors.lastname: Muneeb
authors.forename: Gerhard
authors.initials: G
authors.lastname: Boehm
authors.forename: Roel
authors.initials: R
authors.lastname: Baets
authors.forename: Markus-Christian
authors.initials: MC
authors.lastname: Amann
authors.forename: Gunther
authors.initials: G
authors.lastname: Roelkens