title: Fluorinated CYTOP passivation effects on the electrical reliability of multilayer MoS₂ field-effect transistors.
abstract: We demonstrated highly stable multilayer molybdenum disulfide (MoS2) field-effect transistors (FETs) with negligible hysteresis gap (ΔV(HYS) ∼ 0.15 V) via a multiple annealing scheme, followed by systematic investigation for long-term air stability with time (∼50 days) of MoS2 FETs with (or without) CYTOP encapsulation. The extracted lifetime of the device with CYTOP passivation in air was dramatically improved from 7 to 377 days, and even for the short-term bias stability, the experimental threshold voltage shift, outstandingly well-matched with the stretched exponential function, indicates that the device without passivation has approximately 25% larger the barrier distribution (ΔE(B) = k(B)T(o)) than that of a device with passivation. This work suggests that CYTOP encapsulation can be an efficient method to isolate external gas (O2 and H2O) effects on the electrical performance of FETs, especially with low-dimensional active materials like MoS2.
authors.affiliation: Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-742, Korea.
authors.forename: Jeongkyun
authors.initials: J
authors.lastname: Roh
authors.forename: In-Tak
authors.initials: IT
authors.lastname: Cho
authors.forename: Hyeonwoo
authors.initials: H
authors.lastname: Shin
authors.forename: Geun Woo
authors.initials: GW
authors.lastname: Baek
authors.forename: Byung Hee
authors.initials: BH
authors.lastname: Hong
authors.forename: Jong-Ho
authors.initials: JH
authors.lastname: Lee
authors.forename: Sung Hun
authors.initials: SH
authors.lastname: Jin
authors.forename: Changhee
authors.initials: C
authors.lastname: Lee