title: Electric Field Control of Spin Lifetimes in Nb-SrTiO_{3} by Spin-Orbit Fields.
abstract: We show electric field control of the spin accumulation at the interface of the oxide semiconductor Nb-SrTiO_{3} with Co/AlO_{x} spin injection contacts at room temperature. The in-plane spin lifetime τ_{∥}, as well as the ratio of the out-of-plane to in-plane spin lifetime τ_{⊥}/τ_{∥}, is manipulated by the built-in electric field at the semiconductor surface, without any additional gate contact. The origin of this manipulation is attributed to Rashba spin orbit fields (SOFs) at the Nb-SrTiO_{3} surface and shown to be consistent with theoretical model calculations based on SOF spin flip scattering. Additionally, the junction can be set in a high or low resistance state, leading to a nonvolatile control of τ_{⊥}/τ_{∥}, consistent with the manipulation of the Rashba SOF strength. Such room temperature electric field control over the spin state is essential for developing energy-efficient spintronic devices and shows promise for complex oxide based (spin) electronics.
authors.affiliation: Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, Netherlands.
authors.forename: A M
authors.initials: AM
authors.lastname: Kamerbeek
authors.affiliation: Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany.
authors.forename: P
authors.initials: P
authors.lastname: Högl
authors.affiliation: Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany.
authors.forename: J
authors.initials: J
authors.lastname: Fabian
authors.affiliation: Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, Netherlands.
authors.forename: T
authors.initials: T
authors.lastname: Banerjee