title: Flexography-Printed In2 O3 Semiconductor Layers for High-Mobility Thin-Film Transistors on Flexible Plastic Substrate.
abstract: Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (≈8 cm(2) V(-1) s(-1) ) nanocrystalline In2 O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2 O3 semiconductor layers from precursor-solution is performed on a Al2 O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ≈0 V for enhancement-mode operation.
authors.affiliation: VTT Technical Research Centre of Finland Ltd, Tietotie 3, FI-02150, Espoo, Finland.
authors.forename: Jaakko
authors.initials: J
authors.lastname: Leppäniemi
authors.affiliation: VTT Technical Research Centre of Finland Ltd, Kaitoväylä 1, FI-90570, Oulu, Finland.
authors.forename: Olli-Heikki
authors.initials: OH
authors.lastname: Huttunen
authors.affiliation: VTT Technical Research Centre of Finland Ltd, Tietotie 3, FI-02150, Espoo, Finland.
authors.forename: Himadri
authors.initials: H
authors.lastname: Majumdar
authors.affiliation: VTT Technical Research Centre of Finland Ltd, Tietotie 3, FI-02150, Espoo, Finland.
authors.forename: Ari
authors.initials: A
authors.lastname: Alastalo
mesh_terms: D007204:Indium / Q000737:chemistry*; D007281:Ink; D055595:Mechanical Phenomena; D010969:Plastics / Q000737:chemistry*; D011327:Printing / Q000295:instrumentation*; D013696:Temperature; D014173:Transistors, Electronic
chemical_list: D010969:Plastics; D007204:Indium; C047711:indium oxide
keywords: flexographic printing; metal oxides; post-contact-annealing; printed electronics; thin-film transistors