title: Laser ablation- and plasma etching-based patterning of graphene on silicon-on-insulator waveguides.
abstract: We present a new approach to remove monolayer graphene transferred on top of a silicon-on-insulator (SOI) photonic integrated chip. Femtosecond laser ablation is used for the first time to remove graphene from SOI waveguides, whereas oxygen plasma etching through a metal mask is employed to peel off graphene from the grating couplers attached to the waveguides. We show by means of Raman spectroscopy and atomic force microscopy that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method.
authors.forename: Jürgen
authors.initials: J
authors.lastname: Van Erps
authors.forename: Tymoteusz
authors.initials: T
authors.lastname: Ciuk
authors.forename: Iwona
authors.initials: I
authors.lastname: Pasternak
authors.forename: Aleksandra
authors.initials: A
authors.lastname: Krajewska
authors.forename: Wlodek
authors.initials: W
authors.lastname: Strupinski
authors.forename: Steven
authors.initials: S
authors.lastname: Van Put
authors.forename: Geert
authors.initials: G
authors.lastname: Van Steenberge
authors.forename: Kitty
authors.initials: K
authors.lastname: Baert
authors.forename: Herman
authors.initials: H
authors.lastname: Terryn
authors.forename: Hugo
authors.initials: H
authors.lastname: Thienpont
authors.forename: Nathalie
authors.initials: N
authors.lastname: Vermeulen