title: WS₂ saturable absorber for dissipative soliton mode locking at 1.06 and 1.55 µm.
abstract: Transition-metal dichalcogenides, such as tungsten disulfide (WS2) and molybdenium disulfide (MoS2), are highly anisotropic layered materials and have attracted growing interest from basic research to practical applications due to their exotic physical property that may complement graphene and other semiconductor materials. WS2 nanosheets are found to exhibit broadband nonlinear saturable absorption property, and saturable absorbers (SAs) are fabricated by depositing WS2 nanosheets on side-polished fibers. Attributing to the weak evanescent field and long interaction length, the WS2 nanosheets are not exposed to large optical intensity, which allows the SA to work at the high-power regime. The SAs are used to mode lock erbium- and ytterbium-doped fiber lasers with normal dispersion, producing trains of dissipative soliton at 1.55 and 1.06 µm respectively. Simulations show that the bandgap of WS2 nanosheets decreases from 1.18 to 0.02 and 0.65 eV by introducing W and S defects respectively, which may contribute to the broadband saturable absorption property of the WS2.
authors.forename: Dong
authors.initials: D
authors.lastname: Mao
authors.forename: Shengli
authors.initials: S
authors.lastname: Zhang
authors.forename: Yadong
authors.initials: Y
authors.lastname: Wang
authors.forename: Xuetao
authors.initials: X
authors.lastname: Gan
authors.forename: Wending
authors.initials: W
authors.lastname: Zhang
authors.forename: Ting
authors.initials: T
authors.lastname: Mei
authors.forename: Yonggang
authors.initials: Y
authors.lastname: Wang
authors.forename: Yishan
authors.initials: Y
authors.lastname: Wang
authors.forename: Haibo
authors.initials: H
authors.lastname: Zeng
authors.forename: Jianlin
authors.initials: J
authors.lastname: Zhao