title: Band Bending Inversion in Bi2Se3 Nanostructures.
abstract: Shubnikov-de Haas oscillations were studied under high magnetic field in Bi2Se3 nanostructures grown by chemical vapor transport, for different bulk carrier densities ranging from 3 × 10(19) cm(-3) to 6 × 10(17) cm(-3). The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density as a result of a competition between bulk and interface doping. These results highlight the need to control electrical doping both in the bulk and at interfaces in order to study only topological surface states.
authors.affiliation: IFW-Dresden , Institute for Solid State Research, PF 270116, D-01171 Dresden, Germany.
authors.forename: Louis
authors.initials: L
authors.lastname: Veyrat
authors.affiliation: Laboratoire National des Champs Magnétiques Intenses (LNCMI-EMFL), UPR 3228, CNRS-UJF-UPS-INSA, 143 Avenue de Rangueil, 31400 Toulouse, France.|Foundation for Research and Technology, IESL, PO Box 1385, 71110 Heraklion, Crete, Greece.|Department of Physics, University of Crete , 70013 Crete, Greece.
authors.forename: Fabrice
authors.initials: F
authors.lastname: Iacovella
authors.affiliation: IFW-Dresden , Institute for Solid State Research, PF 270116, D-01171 Dresden, Germany.
authors.forename: Joseph
authors.initials: J
authors.lastname: Dufouleur
authors.affiliation: IFW-Dresden , Institute for Solid State Research, PF 270116, D-01171 Dresden, Germany.
authors.forename: Christian
authors.initials: C
authors.lastname: Nowka
authors.affiliation: IFW-Dresden , Institute for Solid State Research, PF 270116, D-01171 Dresden, Germany.
authors.forename: Hannes
authors.initials: H
authors.lastname: Funke
authors.affiliation: IFW-Dresden , Institute for Solid State Research, PF 270116, D-01171 Dresden, Germany.
authors.forename: Ming
authors.initials: M
authors.lastname: Yang
authors.affiliation: Laboratoire National des Champs Magnétiques Intenses (LNCMI-EMFL), UPR 3228, CNRS-UJF-UPS-INSA, 143 Avenue de Rangueil, 31400 Toulouse, France.
authors.forename: Walter
authors.initials: W
authors.lastname: Escoffier
authors.affiliation: Laboratoire National des Champs Magnétiques Intenses (LNCMI-EMFL), UPR 3228, CNRS-UJF-UPS-INSA, 143 Avenue de Rangueil, 31400 Toulouse, France.
authors.forename: Michel
authors.initials: M
authors.lastname: Goiran
authors.affiliation: IFW-Dresden , Institute for Solid State Research, PF 270116, D-01171 Dresden, Germany.
authors.forename: Barbara
authors.initials: B
authors.lastname: Eichler
authors.affiliation: IFW-Dresden , Institute for Solid State Research, PF 270116, D-01171 Dresden, Germany.
authors.forename: Oliver G
authors.initials: OG
authors.lastname: Schmidt
authors.affiliation: IFW-Dresden , Institute for Solid State Research, PF 270116, D-01171 Dresden, Germany.
authors.forename: Bernd
authors.initials: B
authors.lastname: Büchner
authors.affiliation: IFW-Dresden , Institute for Solid State Research, PF 270116, D-01171 Dresden, Germany.
authors.forename: Silke
authors.initials: S
authors.lastname: Hampel
authors.affiliation: IFW-Dresden , Institute for Solid State Research, PF 270116, D-01171 Dresden, Germany.|CNRS-Laboratoire de Photonique et Nanostructures , 91460 Marcoussis, France.
authors.forename: Romain
authors.initials: R
authors.lastname: Giraud
keywords: Shubnikov-de Haas oscillations; band bending; bismuth selenide; chemical vapor transport; topological insulators