title: Semiconducting Graphene from Highly Ordered Substrate Interactions.
abstract: While numerous methods have been proposed to produce semiconducting graphene, a significant band gap has never been demonstrated. The reason is that, regardless of the theoretical gap formation mechanism, subnanometer disorder prevents the required symmetry breaking necessary to make graphene semiconducting. In this work, we show for the first time that semiconducting graphene can be made by epitaxial growth. Using improved growth methods, we show by direct band measurements that a band gap greater than 0.5 eV can be produced in the first graphene layer grown on the SiC(0001) surface. This work demonstrates that order, a property that remains lacking in other graphene systems, is key to producing electronically viable semiconducting graphene.
authors.affiliation: The Georgia Institute of Technology, Atlanta, Georgia 30332-0430, USA.
authors.forename: M S
authors.initials: MS
authors.lastname: Nevius
authors.affiliation: The Georgia Institute of Technology, Atlanta, Georgia 30332-0430, USA.
authors.forename: M
authors.initials: M
authors.lastname: Conrad
authors.affiliation: The Georgia Institute of Technology, Atlanta, Georgia 30332-0430, USA.
authors.forename: F
authors.initials: F
authors.lastname: Wang
authors.affiliation: Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR 8502, F-91405 Orsay Cedex, France.|Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, 91192 Gif sur Yvette, France.
authors.forename: A
authors.initials: A
authors.lastname: Celis
authors.affiliation: UR1 CNRS/Synchrotron SOLEIL, Saint-Aubin, 91192 Gif sur Yvette, France.
authors.forename: M N
authors.initials: MN
authors.lastname: Nair
authors.affiliation: UR1 CNRS/Synchrotron SOLEIL, Saint-Aubin, 91192 Gif sur Yvette, France.
authors.forename: A
authors.initials: A
authors.lastname: Taleb-Ibrahimi
authors.affiliation: Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR 8502, F-91405 Orsay Cedex, France.|Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, 91192 Gif sur Yvette, France.
authors.forename: A
authors.initials: A
authors.lastname: Tejeda
authors.affiliation: The Georgia Institute of Technology, Atlanta, Georgia 30332-0430, USA.
authors.forename: E H
authors.initials: EH
authors.lastname: Conrad