title: Room Temperature Oxide Deposition Approach to Fully Transparent, All-Oxide Thin-Film Transistors.
abstract: A room temperature cathodic arc deposition technique is used to produce high-mobility ZnO thin films for low voltage thin-film transistors (TFTs) and digital logic inverters. All-oxide, fully transparent devices are fabricated on alkali-free glass and flexible polyimide foil, exhibiting high performance. This provides a practical materials platform for the low-temperature fabrication of all-oxide TFTs on virtually any substrate.
authors.affiliation: Electrical Engineering and Computer Sciences Department, University of California, Berkeley, CA, 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Thomas
authors.initials: T
authors.lastname: Rembert
authors.affiliation: Electrical Engineering and Computer Sciences Department, University of California, Berkeley, CA, 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Corsin
authors.initials: C
authors.lastname: Battaglia
authors.affiliation: Plasma Applications Group, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: André
authors.initials: A
authors.lastname: Anders
authors.affiliation: Electrical Engineering and Computer Sciences Department, University of California, Berkeley, CA, 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Ali
authors.initials: A
authors.lastname: Javey
keywords: flexible electronics; metal oxides; thin-film transistors; transparent electronics