title: Comparative Study on Statistical-Variation Tolerance Between Complementary Crossbar and Twin Crossbar of Binary Nano-scale Memristors for Pattern Recognition.
abstract: This paper performs a comparative study on the statistical-variation tolerance between two crossbar architectures which are the complementary and twin architectures. In this comparative study, 10 greyscale images and 26 black-and-white alphabet characters are tested using the circuit simulator to compare the recognition rate with varying statistical variation and correlation parameters.As with the simulation results of 10 greyscale image recognitions, the twin crossbar shows better recognition rate by 4 % on average than the complementary one, when the inter-array correlation = 1 and intra-array correlation = 0. When the inter-array correlation = 1 and intra-array correlation = 1, the twin architecture can recognize better by 5.6 % on average than the complementary one.Similarly, when the inter-array correlation = 1 and intra-array correlation = 0, the twin architecture can recognize 26 alphabet characters better by 4.5 % on average than the complementary one. When the inter-array correlation = 1 and intra-array correlation = 1, the twin architecture is better by 6 % on average than the complementary one. By summary, we can conclude that the twin crossbar is more robust than the complementary one under the same amounts of statistical variation and correlation.
authors.affiliation: School of Electrical Engineering, Kookmin University, 77, Jeongneung-ro, Seongbuk-gu, Seoul, 136-702, South Korea. sontn@kookmin.ac.kr.
authors.forename: Son Ngoc
authors.initials: SN
authors.lastname: Truong
authors.affiliation: School of Electrical Engineering, Kookmin University, 77, Jeongneung-ro, Seongbuk-gu, Seoul, 136-702, South Korea. sshaking@kookmin.ac.kr.
authors.forename: SangHak
authors.initials: S
authors.lastname: Shin
authors.affiliation: School of Electrical Engineering, Kookmin University, 77, Jeongneung-ro, Seongbuk-gu, Seoul, 136-702, South Korea. sangdon@kookmin.ac.kr.
authors.forename: Sang-Don
authors.initials: SD
authors.lastname: Byeon
authors.affiliation: School of Electrical Engineering, Kookmin University, 77, Jeongneung-ro, Seongbuk-gu, Seoul, 136-702, South Korea. gkdma2140@kookmin.ac.kr.
authors.forename: JaeSang
authors.initials: J
authors.lastname: Song
authors.affiliation: School of Electrical Engineering, Kookmin University, 77, Jeongneung-ro, Seongbuk-gu, Seoul, 136-702, South Korea. tyche@kookmin.ac.kr.
authors.forename: Hyun-Sun
authors.initials: HS
authors.lastname: Mo
authors.affiliation: School of Electrical Engineering, Kookmin University, 77, Jeongneung-ro, Seongbuk-gu, Seoul, 136-702, South Korea. mks@kookmin.ac.kr.
authors.forename: Kyeong-Sik
authors.initials: KS
authors.lastname: Min
keywords: Binary memristors; Complementary crossbar; Memristor array; Pattern recognition; Statistical-variation tolerance; Twin crossbar