title: Random pinning changes the melting scenario of a two-dimensional core-softened potential system.
abstract: In experiments two-dimensional systems are realized mainly on solid substrates, which introduce quenched disorder due to some inherent defects. The defects of substrates influence the melting scenario of the systems and have to be taken into account in the interpretation of experimental results. We present the results of molecular dynamics simulations of a two-dimensional system with a core-softened potential in which a small fraction of the particles is pinned, inducing quenched disorder. Ppotentials of this type are widely used for the qualitative description of systems with waterlike anomalies. In our previous publications it was shown that the system demonstrates an anomalous melting scenario: at low densities the system melts through two continuous transitions in accordance with the Kosterlitz-Thouless-Halperin-Nelson-Young (KTHNY) theory with an intermediate hexatic phase, while at high densities the conventional first-order melting transition takes place. We find that the well-known disorder-induced widening of the hexatic phase occurs at low densities, while in the high-density part of the phase diagram random pinning transforms the first-order melting into two transitions: a continuous KTHNY-like solid-hexatic transition and a first-order hexatic-isotropic liquid transition.
authors.affiliation: Institute for High Pressure Physics RAS, Kaluzhskoe shosse 14, 142190 Troitsk, Moscow, Russia.
authors.forename: E N
authors.initials: EN
authors.lastname: Tsiok
authors.affiliation: Institute for High Pressure Physics RAS, Kaluzhskoe shosse 14, 142190 Troitsk, Moscow, Russia.
authors.forename: D E
authors.initials: DE
authors.lastname: Dudalov
authors.affiliation: Institute for High Pressure Physics RAS, Kaluzhskoe shosse 14, 142190 Troitsk, Moscow, Russia.|Moscow Institute of Physics and Technology, 141700 Moscow, Russia.
authors.forename: Yu D
authors.initials: YD
authors.lastname: Fomin
authors.affiliation: Institute for High Pressure Physics RAS, Kaluzhskoe shosse 14, 142190 Troitsk, Moscow, Russia.|Moscow Institute of Physics and Technology, 141700 Moscow, Russia.
authors.forename: V N
authors.initials: VN
authors.lastname: Ryzhov