title: Performance Enhancement of ZITO Thin-Film Transistors via Graphene Bridge Layer by Sol-Gel Combustion Process.
abstract: In this article, we reported the stacked structure zinc-indium-tin oxide (ZITO) thin-film transistors (TFTs) with graphene nanosheets (GNSs) prepared by solution process. GNSs were used as bridge layer between dual-ZITO layers. The transmission of stacked ZITO/GNSs/ZITO films are more than 80% in the visible region and the resistivity of ZITO films with GNSs bridge layer decreased from 502.9 to 13.4 Ω cm. The solution-processed TFT devices with GNSs bridge layer exhibited a desirable characteristic with a subthreshold slope of 0.25 V/dec and current on-off ratio of 1 × 10(7), and the saturation filed effect mobility is improved to 45.9 cm(2)V(-1)s(-1), which exceeds the mobility values of the pristine ZITO TFTs by one order. These results demonstrate the solution-processed ZITO/GNSs/ZITO TFTs maybe make a further step to achieve high-performance TFTs and show the potential for next-generation applications.
authors.affiliation: Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University , Shanghai 200072, China.
authors.forename: Jianhua
authors.initials: J
authors.lastname: Zhang
authors.affiliation: Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University , Shanghai 200072, China.
authors.forename: Panpan
authors.initials: P
authors.lastname: Dong
authors.affiliation: Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University , Shanghai 200072, China.
authors.forename: Yana
authors.initials: Y
authors.lastname: Gao
authors.affiliation: Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University , Shanghai 200072, China.
authors.forename: Chenhang
authors.initials: C
authors.lastname: Sheng
authors.affiliation: Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University , Shanghai 200072, China.
authors.forename: Xifeng
authors.initials: X
authors.lastname: Li
keywords: ZITO; bridge layer; graphene; sol−gel; thin film transistors