title: Lateral and Vertical Two-Dimensional Layered Topological Insulator Heterostructures.
abstract: The heterostructured configuration between two-dimensional (2D) semiconductor materials has enabled the engineering of the band gap and the design of novel devices. So far, the synthesis of single-component topological insulator (TI) 2D materials such as Bi2Se3, Bi2Te3, and Sb2Te3 has been achieved through vapor phase growth and molecular beam epitaxy; however, the spatial controlled fabrication of 2D lateral heterostructures in these systems has not been demonstrated yet. Here, we report an in situ two-step synthesis process to form TI lateral heterostructures. Scanning transmission electron microscopy and energy-dispersive X-ray mapping results show the successful spatial control of chemical composition in these as-prepared heterostructures. The edge-induced growth mechanism is revealed by the ex situ atomic force microscope measurements. Electrical transport studies demonstrate the existence of p-n junctions in Bi2Te3/Sb2Te3 heterostructures.
authors.forename: Yanbin
authors.initials: Y
authors.lastname: Li
authors.forename: Jinsong
authors.initials: J
authors.lastname: Zhang
authors.forename: Guangyuan
authors.initials: G
authors.lastname: Zheng
authors.forename: Yongming
authors.initials: Y
authors.lastname: Sun
authors.forename: Seung Sae
authors.initials: SS
authors.lastname: Hong
authors.forename: Feng
authors.initials: F
authors.lastname: Xiong
authors.forename: Shuang
authors.initials: S
authors.lastname: Wang
authors.forename: Hye Ryoung
authors.initials: HR
authors.lastname: Lee
authors.affiliation: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory , 2575 Sand Hill Road, Menlo Park, California 94025, United States.
authors.forename: Yi
authors.initials: Y
authors.lastname: Cui
keywords: electrical transport measurements; in situ synthesis method; lateral heterostructures; layered materials; topological insulator