title: In Situ Fabrication of Nano Transistors by Selective Deposition of a Gate Dielectric around Carbon Nanotubes.
abstract: The CNT-SiO2 core-shell structure is particularly appealing because the insulating SiO2 layer wraps around the CNTs, functioning as a gate dielectric. However, it is still a challenge to expose both end-caps of the structure for enabling them to serve as electrodes, which additionally requires complicated postprocesses. Here, we present a unique CNTs-SiO2 core-shell structure where both ends are uncovered with SiO2 in a "peeled-wire" structure. In this structure, SiO2 particles partially encapsulate the CNTs during the synthesis, resulting in both end-caps of the nanotube being self-exposed and electrically conductive. The field-effect transistor build-up with this structure exhibits p-type characteristics with a linear conductance behavior on Id-Vd output performance. This approach for making self-formed electrodes in the CNT-SiO2 core-shell structure provides a simple and efficient way for applying them to future nanodevices in terms of process simplicity and cost effectiveness.
authors.affiliation: Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208, United States.
authors.forename: Jae-Hyeok
authors.initials: JH
authors.lastname: Lee
authors.affiliation: Non-Ferrous Materials Group, Korea Institute of Industrial Technology (KITECH) , 137-41 Gwahakdanji-ro, Gangneung-si 25440, Republic of Korea.
authors.forename: Young K
authors.initials: YK
authors.lastname: Jeong
authors.affiliation: Department of Chemistry, Physics, and Engineering Studies, Chicago State University , 9501 South King Drive, Chicago, Illinois 60628, United States.
authors.forename: John A
authors.initials: JA
authors.lastname: Peters
authors.affiliation: Department of Molecular Science and Technology, Ajou University , Suwon 443-749, Republic of Korea.
authors.forename: Gwang-Hyeon
authors.initials: GH
authors.lastname: Nam
authors.affiliation: Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208, United States.
authors.forename: Sunghwan
authors.initials: S
authors.lastname: Jin
authors.affiliation: Department of Molecular Science and Technology, Ajou University , Suwon 443-749, Republic of Korea.
authors.forename: Jae-Ho
authors.initials: JH
authors.lastname: Kim
keywords: carbon nanotube; core−shell structure; dielectric layer; field-effect transistor; nanostructures; self-exposed end-caps