title: A Fully Transparent Resistive Memory for Harsh Environments.
abstract: A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 10(4) sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.
authors.affiliation: Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: Po-Kang
authors.initials: PK
authors.lastname: Yang
authors.affiliation: Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
authors.forename: Chih-Hsiang
authors.initials: CH
authors.lastname: Ho
authors.affiliation: Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: Der-Hsien
authors.initials: DH
authors.lastname: Lien
authors.affiliation: Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: José Ramón
authors.initials: JR
authors.lastname: Durán Retamal
authors.affiliation: Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: Chen-Fang
authors.initials: CF
authors.lastname: Kang
authors.affiliation: Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, ROC.
authors.forename: Kuan-Ming
authors.initials: KM
authors.lastname: Chen
authors.affiliation: Institute of Photonics and Optoelectronics &Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan, ROC.
authors.forename: Teng-Han
authors.initials: TH
authors.lastname: Huang
authors.affiliation: Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, ROC.
authors.forename: Yueh-Chung
authors.initials: YC
authors.lastname: Yu
authors.affiliation: Institute of Photonics and Optoelectronics &Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan, ROC.
authors.forename: Chih-I
authors.initials: CI
authors.lastname: Wu
authors.affiliation: Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: Jr-Hau
authors.initials: JH
authors.lastname: He