title: Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO.
abstract: Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with a hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in the free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field-effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.
authors.affiliation: Department of Chemistry, Hanyang University, Seoul 133-791, Korea. smm@hanyang.ac.kr.
authors.forename: Kyung Sun
authors.initials: KS
authors.lastname: Park
authors.affiliation: Department of Chemistry, Hanyang University, Seoul 133-791, Korea. smm@hanyang.ac.kr.
authors.forename: Sejoon
authors.initials: S
authors.lastname: Kim
authors.affiliation: Department of Chemistry, Hanyang University, Seoul 133-791, Korea. smm@hanyang.ac.kr.
authors.forename: Hongbum
authors.initials: H
authors.lastname: Kim
authors.affiliation: Department of Chemistry, Hanyang University, Seoul 133-791, Korea. smm@hanyang.ac.kr.
authors.forename: Deokhyeon
authors.initials: D
authors.lastname: Kwon
authors.affiliation: Department of Chemistry, Hanyang University, Seoul 133-791, Korea. smm@hanyang.ac.kr.
authors.forename: Yong-Eun Koo
authors.initials: YE
authors.lastname: Lee
authors.affiliation: Department of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea. semicon@yonsei.ac.kr.
authors.forename: Sung-Wook
authors.initials: SW
authors.lastname: Min
authors.affiliation: Department of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea. semicon@yonsei.ac.kr.
authors.forename: Seongil
authors.initials: S
authors.lastname: Im
authors.affiliation: Department of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea. semicon@yonsei.ac.kr.
authors.forename: Hyoung Joon
authors.initials: HJ
authors.lastname: Choi
authors.affiliation: Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Seulky
authors.initials: S
authors.lastname: Lim
authors.affiliation: Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Hyunjung
authors.initials: H
authors.lastname: Shin
authors.affiliation: Department of Chemical Engineering, Hanyang University, Seoul 133-791, Korea.
authors.forename: Sang Man
authors.initials: SM
authors.lastname: Koo
authors.affiliation: Department of Chemistry, Hanyang University, Seoul 133-791, Korea. smm@hanyang.ac.kr.
authors.forename: Myung Mo
authors.initials: MM
authors.lastname: Sung