title: Submonolayer Uniformity of Type II InAs/GaInSb W-shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-infrared Spectral Range.
abstract: The spatial uniformity of GaSb- and InAs substrate-based structures containing type II quantum wells was probed by means of large-scale photoluminescence (PL) mapping realized utilizing a Fourier transform infrared spectrometer. The active region was designed and grown in a form of a W-shaped structure with InAs and GaInSb layers for confinement of electrons and holes, respectively. The PL spectra were recorded over the entire 2-in. wafers, and the parameters extracted from each spectrum, such as PL peak energy position, its linewidth and integrated intensity, were collected in a form of two-dimensional spatial maps. Throughout the analysis of these maps, the wafers' homogeneity and precision of the growth procedure were investigated. A very small variation of PL peak energy over the wafer indicates InAs quantum well width fluctuation of only a fraction of a monolayer and hence extraordinary thickness accuracy, a conclusion further supported by high uniformity of both the emission intensity and PL linewidth.
authors.affiliation: Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Technology, St. Wybrzeże Wyspiańskiego 27, Wrocław, 50-370, Poland. mateusz.dyksik@pwr.edu.pl.
authors.forename: Mateusz
authors.initials: M
authors.lastname: Dyksik
authors.affiliation: Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Technology, St. Wybrzeże Wyspiańskiego 27, Wrocław, 50-370, Poland.
authors.forename: Marcin
authors.initials: M
authors.lastname: Motyka
authors.affiliation: Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Technology, St. Wybrzeże Wyspiańskiego 27, Wrocław, 50-370, Poland.
authors.forename: Grzegorz
authors.initials: G
authors.lastname: Sęk
authors.affiliation: Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Technology, St. Wybrzeże Wyspiańskiego 27, Wrocław, 50-370, Poland.
authors.forename: Jan
authors.initials: J
authors.lastname: Misiewicz
authors.affiliation: Technische Physik, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, University of Würzburg, Am Hubland, Würzburg, 97074, Germany.
authors.forename: Matthias
authors.initials: M
authors.lastname: Dallner
authors.affiliation: Technische Physik, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, University of Würzburg, Am Hubland, Würzburg, 97074, Germany.
authors.forename: Robert
authors.initials: R
authors.lastname: Weih
authors.affiliation: Technische Physik, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, University of Würzburg, Am Hubland, Würzburg, 97074, Germany.
authors.forename: Martin
authors.initials: M
authors.lastname: Kamp
authors.affiliation: Technische Physik, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, University of Würzburg, Am Hubland, Würzburg, 97074, Germany.|School of Physics and Astronomy, University of St. Andrews, North Haugh, St. Andrews, KY16 9SS, UK.
authors.forename: Sven
authors.initials: S
authors.lastname: Höfling
keywords: Fourier transform spectroscopy; Interband cascade lasers; Mid-infrared; Spatially resolved photoluminescence; Type II quantum wells