title: Highly spectrum-selective ultraviolet photodetector based on p-NiO/n-IGZO thin film heterojunction structure.
abstract: Ultraviolet photodetector with p-n heterojunction is fabricated by magnetron sputtering deposition of n-type indium gallium zinc oxide (n-IGZO) and p-type nickel oxide (p-NiO) thin films on ITO glass. The performance of the photodetector is largely affected by the conductivity of the p-NiO thin film, which can be controlled by varying the oxygen partial pressure during the deposition of the p-NiO thin film. A highly spectrum-selective ultraviolet photodetector has been achieved with the p-NiO layer with a high conductivity. The results can be explained in terms of the "optically-filtering" function of the NiO layer.
authors.forename: H K
authors.initials: HK
authors.lastname: Li
authors.forename: T P
authors.initials: TP
authors.lastname: Chen
authors.forename: S G
authors.initials: SG
authors.lastname: Hu
authors.forename: X D
authors.initials: XD
authors.lastname: Li
authors.forename: Y
authors.initials: Y
authors.lastname: Liu
authors.forename: P S
authors.initials: PS
authors.lastname: Lee
authors.forename: X P
authors.initials: XP
authors.lastname: Wang
authors.forename: H Y
authors.initials: HY
authors.lastname: Li
authors.forename: G Q
authors.initials: GQ
authors.lastname: Lo