title: InAsP quantum dot lasers grown by MOVPE.
abstract: We report on InAsP quantum dot lasers grown by MOVPE for 730-780 nm wavelength emission and compare performance with InP dot samples grown under similar conditions and with similar structures. 1-4 mm long, uncoated facet InAsP dot lasers emit between 760 and 775 nm and 2 mm long lasers with uncoated facets have threshold current density of 260 Acm(-2), compared with 150 Acm(-2) for InP quantum dot samples, which emit at shorter wavelengths, 715-725 nm. Pulsed lasing is demonstrated for InAsP dots up to 380 K with up to 200 mW output power. Measured absorption spectra indicate the addition of Arsenic to the dots has shifted the available transitions to longer wavelengths but also results in a much larger degree of spectral broadening. These spectra and transmission electron microscopy images indicate that the InAsP dots have a much larger degree of inhomogeneous broadening due to dot size variation, both from layer to layer and within a layer.
authors.forename: Ivan
authors.initials: I
authors.lastname: Karomi
authors.forename: Peter M
authors.initials: PM
authors.lastname: Smowton
authors.forename: Samuel
authors.initials: S
authors.lastname: Shutts
authors.forename: Andrey B
authors.initials: AB
authors.lastname: Krysa
authors.forename: Richard
authors.initials: R
authors.lastname: Beanland