title: Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride.
abstract: MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS2 toward that of bulk semiconductor, lowering the barrier height of the formed junction. Herein, we introduce hexagonal boron nitride (h-BN) into MoS2/GaAs heterostructure to suppress the static charge transfer, and the obtained MoS2/h-BN/GaAs solar cell exhibits an improved power conversion efficiency of 5.42%. More importantly, the sandwiched h-BN makes the Fermi level tuning of MoS2 more effective. By employing chemical doping and electrical gating into the solar cell device, PCE of 9.03% is achieved, which is the highest among all the reported monolayer transition metal dichalcogenide based solar cells.
authors.affiliation: Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China.|State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, 310027, China.
authors.forename: Shisheng
authors.initials: S
authors.lastname: Lin
authors.affiliation: Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China.
authors.forename: Xiaoqiang
authors.initials: X
authors.lastname: Li
authors.affiliation: Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Wang
authors.affiliation: Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China.
authors.forename: Zhijuan
authors.initials: Z
authors.lastname: Xu
authors.affiliation: Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China.
authors.forename: Shengjiao
authors.initials: S
authors.lastname: Zhang
authors.affiliation: Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China.
authors.forename: Huikai
authors.initials: H
authors.lastname: Zhong
authors.affiliation: Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China.
authors.forename: Zhiqian
authors.initials: Z
authors.lastname: Wu
authors.affiliation: Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China.
authors.forename: Wenli
authors.initials: W
authors.lastname: Xu
authors.affiliation: Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China.|State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, 310027, China.
authors.forename: Hongsheng
authors.initials: H
authors.lastname: Chen