title: Performance enhancement of planar heterojunction perovskite solar cells by n-doping of the electron transporting layer.
abstract: Herein we report a simple n-doping method to enhance the performance of perovskite solar cells with a planar heterojunction structure. Devices with an n-doped PCBM electron transporting layer exhibit a power conversion efficiency of 13.8% with a remarkably enhanced short-circuit current of 22.0 mA cm(-2) as compared to the devices with an un-doped PCBM layer.
authors.affiliation: Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea. whjpoly@snu.ac.kr.
authors.forename: Shin Sung
authors.initials: SS
authors.lastname: Kim
authors.affiliation: Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea. whjpoly@snu.ac.kr.
authors.forename: Seunghwan
authors.initials: S
authors.lastname: Bae
authors.affiliation: Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea. whjpoly@snu.ac.kr.
authors.forename: Won Ho
authors.initials: WH
authors.lastname: Jo