title: Post-thinning using Ar ion-milling system for transmission electron microscopy specimens prepared by focused ion beam system.
abstract: We investigate Ar ion-milling rates and Ga-ion induced damage on sample surfaces of Si and GaAs single crystals prepared by focused ion beam (FIB) method for transmission electron microscopy observation. The convergent beam electron diffraction technique with Bloch simulation is used to measure the thickness of the Ar-ion milled samples to calculate the milling rates of Si and GaAs single crystals. The measurement shows that an amorphous layer is formed on the sample surface and can be removed by further Ar-ion milling. In addition, the local symmetry breaking induced by FIB is investigated using quantitative symmetry measurement. The FIBed-GaAs sample shows local symmetry breaking after FIB milling, although the FIBed-Si sample has no considerable symmetry breaking.
authors.affiliation: Advanced Process and Materials R&D Group, Incheon Regional Division, Korea Institute of Industrial Technology, Incheon, Republic of Korea.
authors.forename: Min-Hee
authors.initials: MH
authors.lastname: Lee
authors.affiliation: Advanced Process and Materials R&D Group, Incheon Regional Division, Korea Institute of Industrial Technology, Incheon, Republic of Korea.
authors.forename: Kyou-Hyun
authors.initials: KH
authors.lastname: Kim
keywords: Ar ion-milling rate; convergent beam electron diffraction (CBED); focused ion beam (FIB); symmetry quantification; transmission electron microscopy (TEM)