title: Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices.
abstract: By modification of the electrode-solid-electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta2 O5 /Pt is demonstrated, thus, bridging both mechanisms. The ECM operation is discussed in the light of Ta-cation mobility in TaOx . The crucial role of electrochemical processes and moisture in the resistive switching process is also highlighted.
authors.affiliation: Peter Grünberg Institute (Electronic Materials - PGI-7), Forschungszentrum Jülich, 52425, Jülich, Germany.
authors.forename: Michael
authors.initials: M
authors.lastname: Lübben
authors.affiliation: Institute of Nanoscience and Nanotechnology, NCSR Demokritos, 15310, Athens, Greece.
authors.forename: Panagiotis
authors.initials: P
authors.lastname: Karakolis
authors.affiliation: Institute of Nanoscience and Nanotechnology, NCSR Demokritos, 15310, Athens, Greece.
authors.forename: Vassilios
authors.initials: V
authors.lastname: Ioannou-Sougleridis
authors.affiliation: Institute of Nanoscience and Nanotechnology, NCSR Demokritos, 15310, Athens, Greece.
authors.forename: Pascal
authors.initials: P
authors.lastname: Normand
authors.affiliation: Institute of Nanoscience and Nanotechnology, NCSR Demokritos, 15310, Athens, Greece.
authors.forename: Panagiotis
authors.initials: P
authors.lastname: Dimitrakis
authors.affiliation: Peter Grünberg Institute (Electronic Materials - PGI-7), Forschungszentrum Jülich, 52425, Jülich, Germany.
authors.forename: Ilia
authors.initials: I
authors.lastname: Valov
keywords: electrochemical metallization memories; graphene; interfaces; redox-based resistive switching memories (ReRAM); valence change memories