title: Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acid.
abstract: Chemical doping of graphene is a key process for the modulation of its electronic properties and the design and fabrication of graphene-based nanoelectronic devices. Here, we study the adsorption of diluted concentrations of nitric acid (HNO3) onto monolayer graphene/4H-SiC (0001) to induce a variation of the graphene work function (WF). Raman spectroscopy indicates an increase in the defect density subsequent to the doping. Moreover, ultraviolet photoemission spectroscopy (UPS) was utilized to quantify the WF shift. UPS data show that the WF of the graphene layer decreased from 4.3 eV (pristine) down to 3.8 eV (30% HNO3) and then increased to 4.4 eV at 100% HNO3 concentration. These observations were confirmed using density functional theory (DFT) calculations. This straightforward process allows a large WF modulation, rendering the molecularly modified graphene/4H-SiC(0001) a highly suitable electron or hole injection electrode.
authors.affiliation: GeePs, CNRS UMR8507, CentraleSupelec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. Department of Materials Science and Engineering, Izmir Kâtip Çelebi University Cigli Main Campus, 35620, IZMIR, Turkey.
authors.forename: Fethullah
authors.initials: F
authors.lastname: Günes
authors.forename: Hakim
authors.initials: H
authors.lastname: Arezki
authors.forename: Debora
authors.initials: D
authors.lastname: Pierucci
authors.forename: David
authors.initials: D
authors.lastname: Alamarguy
authors.forename: José
authors.initials: J
authors.lastname: Alvarez
authors.forename: Jean-Paul
authors.initials: JP
authors.lastname: Kleider
authors.forename: Yannick J
authors.initials: YJ
authors.lastname: Dappe
authors.forename: Abdelkarim
authors.initials: A
authors.lastname: Ouerghi
authors.forename: Mohamed
authors.initials: M
authors.lastname: Boutchich