title: Seamless lamination of a concave-convex architecture with single-layer graphene.
abstract: Graphene has been used as an electrode and channel material in electronic devices because of its superior physical properties. Recently, electronic devices have changed from a planar to a complicated three-dimensional (3D) geometry to overcome the limitations of planar devices. The evolution of electronic devices requires that graphene be adaptable to a 3D substrate. Here, we demonstrate that chemical-vapor-deposited single-layer graphene can be transferred onto a silicon dioxide substrate with a 3D geometry, such as a concave-convex architecture. A variety of silicon dioxide concave-convex architectures were uniformly and seamlessly laminated with graphene using a thermal treatment. The planar graphene was stretched to cover the concave-convex architecture, and the resulting strain on the curved graphene was spatially resolved by confocal Raman spectroscopy; molecular dynamic simulations were also conducted and supported the observations. Changes in electrical resistivity caused by the spatially varying strain induced as the graphene-silicon dioxide laminate varies dimensionally from 2D to 3D were measured by using a four-point probe. The resistivity measurements suggest that the electrical resistivity can be systematically controlled by the 3D geometry of the graphene-silicon dioxide laminate. This 3D graphene-insulator laminate will broaden the range of graphene applications beyond planar structures to 3D materials.
authors.affiliation: Department of Physics and SAINT, Sungkyunkwan University, Suwon 440-746, Republic of Korea. jrahn@skku.edu.
authors.forename: Ji-Hoon
authors.initials: JH
authors.lastname: Park
authors.affiliation: Department of Physics, Kyonggi University, Suwon 443-760, Republic of Korea. shju@kgu.ac.kr.
authors.forename: Taekyung
authors.initials: T
authors.lastname: Lim
authors.affiliation: Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea.
authors.forename: Jaeyoon
authors.initials: J
authors.lastname: Baik
authors.affiliation: Department of Physics, Kyonggi University, Suwon 443-760, Republic of Korea. shju@kgu.ac.kr.
authors.forename: Keumyoung
authors.initials: K
authors.lastname: Seo
authors.affiliation: Department of Physics and SAINT, Sungkyunkwan University, Suwon 440-746, Republic of Korea. jrahn@skku.edu.
authors.forename: Youngkwon
authors.initials: Y
authors.lastname: Moon
authors.affiliation: Interdisciplinary School of Green Energy, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Noejung
authors.initials: N
authors.lastname: Park
authors.affiliation: Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea.
authors.forename: Hyun-Joon
authors.initials: HJ
authors.lastname: Shin
authors.affiliation: School of Nano-Bioscience and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea. skkwak@unist.ac.kr.
authors.forename: Sang Kyu
authors.initials: SK
authors.lastname: Kwak
authors.affiliation: Department of Physics, Kyonggi University, Suwon 443-760, Republic of Korea. shju@kgu.ac.kr.
authors.forename: Sanghyun
authors.initials: S
authors.lastname: Ju
authors.affiliation: Department of Physics and SAINT, Sungkyunkwan University, Suwon 440-746, Republic of Korea. jrahn@skku.edu.
authors.forename: Joung Real
authors.initials: JR
authors.lastname: Ahn