title: Observation of tunable electrical bandgap in large-area twisted bilayer graphene synthesized by chemical vapor deposition.
abstract: Although there are already many efforts to investigate the electronic structures of twisted bilayer graphene, a definitive conclusion has not yet been reached. In particular, it is still a controversial issue whether a tunable electrical (or transport) bandgap exists in twisted bilayer graphene film until now. Herein, for the first time, it has been demonstrated that a tunable electrical bandgap can be opened in the twisted bilayer graphene by the combination effect of twist and vertical electrical fields. In addition, we have also developed a facile chemical vapor deposition method to synthesize large-area twisted bilayer graphene by introducing decaborane as the cocatalyst for decomposing methane molecules. The growth mechanism is demonstrated to be a defined-seeding and self-limiting process. This work is expected to be beneficial to the fundamental understanding of both the growth mechanism for bilayer graphene on Cu foil and more significantly, the electronic structures of twisted bilayer graphene.
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China.
authors.forename: Jing-Bo
authors.initials: JB
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China.
authors.forename: Ping-Jian
authors.initials: PJ
authors.lastname: Li
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China.
authors.forename: Yuan-Fu
authors.initials: YF
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China.
authors.forename: Ze-Gao
authors.initials: ZG
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China.
authors.forename: Fei
authors.initials: F
authors.lastname: Qi
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China.
authors.forename: Jia-Rui
authors.initials: JR
authors.lastname: He
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China.
authors.forename: Bin-Jie
authors.initials: BJ
authors.lastname: Zheng
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China.
authors.forename: Jin-Hao
authors.initials: JH
authors.lastname: Zhou
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China.
authors.forename: Wan-Li
authors.initials: WL
authors.lastname: Zhang
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
authors.forename: Lin
authors.initials: L
authors.lastname: Gu
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China.
authors.forename: Yan-Rong
authors.initials: YR
authors.lastname: Li