Synthesis of large-area multilayer hexagonal boron nitride for high material performance.
Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young's modulus: 1.16 ± 0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼ 24,000 cm(2) V(-1) s(-1) at room temperature, higher than that (∼ 13,000 (2) V(-1) s(-1)) with exfoliated h-BN. By placing additional h-BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times.
Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), San101 Eunha-Ri, Bongdong-Eup, Wanju-Gun, Jeollabuk-Do 565-902, Korea.|Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
Soo Min
SM
Kim
Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
Allen
A
Hsu
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
Min Ho
MH
Park
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Korea.|Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon 440-746, Korea.
Sang Hoon
SH
Chae
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Korea.|Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon 440-746, Korea.
Seok Joon
SJ
Yun
Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), San101 Eunha-Ri, Bongdong-Eup, Wanju-Gun, Jeollabuk-Do 565-902, Korea.
Joo Song
JS
Lee
Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210-1142, USA.
Dae-Hyun
DH
Cho
Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
Wenjing
W
Fang
School of Mechanical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.|SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Korea.
Changgu
C
Lee
Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
Tomás
T
Palacios
Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.|Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
Mildred
M
Dresselhaus
Department of Energy and Materials Engineering, Dongguk University-Seoul, Seoul 100-715, Korea.
Ki Kang
KK
Kim
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Korea.|Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon 440-746, Korea.
Young Hee
YH
Lee
Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
Jing
J
Kong