Structural and Chemical Dynamics of Pyridinic-Nitrogen Defects in Graphene.
High density and controllable nitrogen doping in graphene is a critical issue to realize high performance graphene-based devices. In this paper, we demonstrate an efficient method to selectively produce graphitic-N and pyridinic-N defects in graphene by using the mixture plasma of ozone and nitrogen. The atomic structure, electronic structure, and dynamic behavior of these nitrogen defects are systematically studied at the atomic level by using a scanning transmission electron microscopy. The pyridinic-N exhibits higher chemical activity and tends to trap a series of transition metal atoms (Mg, Al, Ca, Ti, Cr, Mn, and Fe) as individual atoms.
National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565, Japan.
Yung-Chang
YC
Lin
Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
Po-Yuan
PY
Teng
Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
Chao-Hui
CH
Yeh
National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565, Japan.
Masanori
M
Koshino
Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
Po-Wen
PW
Chiu
National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565, Japan.
Kazu
K
Suenaga
EELS; chemical dynamics; graphene; graphitic-nitrogen; pyridinic-nitrogen