Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiOx/TiN.
The decidedly unusual co-occurrence of bipolar, complementary, and unipolar resistive switching (BRS, CRS, and URS, respectively) behavior under the same high set current compliance (set-CC) is discussed on the basis of filament geometry in a Pt/SiOx/TiN stack. Set-CC-dependent scaling behavior with relations Ireset ~ R0(-α) and Vreset ~ R0(-β) differentiates BRS under low set-CC from other switching behaviors under high set-CC due to a low α and β involving a narrow filamentary path. Because such co-occurrence is observed only in the case of a high α and β involving a wide filamentary path, such a path can be classified into three different geometries according to switching behavior in detail. From the cyclic switching and a model simulation, we conclude that the reset of BRS originates from a narrower filamentary path near the top electrode than that of CRS due to the randomness of field-driven migration even under the same set-CC. Also, we conclude that URS originates from much narrower inversed conical filamentary path. Therefore, filament-geometry-dependent electric field and/or thermal effects can precisely describe the entire switching behaviors in this experiment.
Department of Physics, Yonsei University, Seoul 120-749, Korea.
Dong-Hyeok
DH
Lim
Department of Physics, Yonsei University, Seoul 120-749, Korea.
Ga-Yeon
GY
Kim
Department of Physics, Yonsei University, Seoul 120-749, Korea.
Jin-Ho
JH
Song
Department of Physics, Yonsei University, Seoul 120-749, Korea.
Kwang-Sik
KS
Jeong
Department of Material Science and Engineering, Yonsei University, Seoul 120-749, Korea.
Dae-Hong
DH
Ko
Department of Physics, Yonsei University, Seoul 120-749, Korea.
Mann-Ho
MH
Cho