Inverted Quantum-Dot Light Emitting Diode Using Solution Processed p-Type WOx Doped PEDOT:PSS and Li Doped ZnO Charge Generation Layer.
Quantum dots (QDs) are a promising material for emissive display with low-cost manufacturing and excellent color purity. In this study, we report colloidal quantum-dot light emitting diodes (QLEDs) with an inverted architecture with a solution processed charge generation layer (CGL) of p-type polymer (tungsten oxide doped poly(ethylenedioxythiophene)/polystyrenesulfonate,
PSS:WOx) and n-type metal oxide (lithium doped zinc oxide, LZO). The effective charge generation in solution processed p-n junction was confirmed by capacitance-voltage (C-V) and current density-electric field characteristics. It is also demonstrated that the performances of CGL based QLEDs are very similar when various substrates with different work functions are used.
Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University , Dongdaemoon-ku, Seoul 130-701, Korea.
Hyo-Min
HM
Kim
Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University , Dongdaemoon-ku, Seoul 130-701, Korea.
Jeonggi
J
Kim
Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University , Dongdaemoon-ku, Seoul 130-701, Korea.
Jieun
J
Lee
Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University , Dongdaemoon-ku, Seoul 130-701, Korea.
Jin
J
Jang
charge generation layer; internal quantum efficiency; quantum dot; quantum-dot light emitting diodes; solution process