Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering.
Changes in the carrier mobility of tensile strained Si and SiGe nanowires (NWs) were examined using an electrical push-to-pull device (E-PTP, Hysitron). The changes were found to be closely related to the chemical structure at the surface, likely defect states. As tensile strain is increased, the resistivity of SiGe NWs deceases in a linear manner. However, the corresponding values for Si NWs increased with increasing tensile strain, which is closely related to broken bonds induced by defects at the NW surface. Broken bonds at the surface, which communicate with the defect state of Si are critically altered when Ge is incorporated in Si NW. In addition, the number of defects could be significantly decreased in Si NWs by incorporating a surface passivated Al2O3 layer, which removes broken bonds, resulting in a proportional decrease in the resistivity of Si NWs with increasing strain. Moreover, the presence of a passivation layer dramatically increases the extent of fracture strain in NWs, and a significant enhancement in mobility of about 2.6 times was observed for a tensile strain of 5.7%.
Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
J W
JW
Ma
Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
W J
WJ
Lee
Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
J M
JM
Bae
Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
K S
KS
Jeong
Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
S H
SH
Oh
Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
J H
JH
Kim
Nano Analysis Center, KIST , Seoul 130-650, Korea.
S-H
SH
Kim
Nano Analysis Center, KIST , Seoul 130-650, Korea.
J-H
JH
Seo
Nano Analysis Center, KIST , Seoul 130-650, Korea.
J-P
JP
Ahn
School of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 440-746, Korea.
H
H
Kim
Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
M-H
MH
Cho
Si; SiGe; nanowire; passivation; strain; surface defect