Temperature Tunable Self-Doping in Stable Diradicaloid Thin-Film Devices.
FDT and FDT-Br diradicaloids with stable coexisting close-shell and open-shell forms exhibit unconventional self-doping behavior in solid-state electronic devices that is temperature (T) tunable and reversible. The doping is strengthened by the increased T, leading to the absence of off-states (I(off)) in the transistors.
Center for Polymers and Organic Solids, University of California, Santa Barbara, CA, 93106, USA.|School of Chemistry and Environment, Beihang University, Beijing, 100191, P. R. China.
Yuan
Y
Zhang
Center for Polymers and Organic Solids, University of California, Santa Barbara, CA, 93106, USA.|Tohoku University WPI-AIMR and CNSI Joint Center, University of California, Santa Barbara, CA, 93106, USA.
Yonghao
Y
Zheng
National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
Huiqiong
H
Zhou
Department of Chemistry and Biochemistry, California State University Northridge, Northridge, CA, 91330, USA.|Beijing Computational Science Research Center, Beijing, 10084, P. R. China.
Mao-Sheng
MS
Miao
Center for Polymers and Organic Solids, University of California, Santa Barbara, CA, 93106, USA.
Fred
F
Wudl
Center for Polymers and Organic Solids, University of California, Santa Barbara, CA, 93106, USA.
Thuc-Quyen
TQ
Nguyen
diradicaloid; electrical conductivity; self-doping; thermal activation