Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping.
Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This is reproduced by band profile simulations, which reveal the reduction of the Stark shift in the quantum wells by Si doping. We demonstrate nanocathodoluminescence is a powerful technique to optimize doping in optoelectronic devices.
Department of Materials Science and Metallurgy, University of Cambridge , Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.
James T
JT
Griffiths
Department of Materials Science and Metallurgy, University of Cambridge , Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.
Siyuan
S
Zhang
Department of Materials Science and Metallurgy, University of Cambridge , Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.
Bertrand
B
Rouet-Leduc
Department of Materials Science and Metallurgy, University of Cambridge , Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.
Wai Yuen
WY
Fu
Department of Materials Science and Metallurgy, University of Cambridge , Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.
An
A
Bao
Department of Materials Science and Metallurgy, University of Cambridge , Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.|Plessey Semiconductors , Tamerton Road, Plymouth PL6 7BQ, United Kingdom.
Dandan
D
Zhu
Department of Materials Science and Metallurgy, University of Cambridge , Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.|Plessey Semiconductors , Tamerton Road, Plymouth PL6 7BQ, United Kingdom.
David J
DJ
Wallis
Experimental Techniques Centre, Brunel University , Uxbridge UB8 3PH, United Kingdom.
Ashley
A
Howkins
Experimental Techniques Centre, Brunel University , Uxbridge UB8 3PH, United Kingdom.
Ian
I
Boyd
Gatan U.K. , 25 Nuffield Way, Abingdon, Oxon OX14 1RL, United Kingdom.
David
D
Stowe
Department of Materials Science and Metallurgy, University of Cambridge , Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.
Menno J
MJ
Kappers
Department of Materials Science and Metallurgy, University of Cambridge , Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.
Colin J
CJ
Humphreys
Department of Materials Science and Metallurgy, University of Cambridge , Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.
Rachel A
RA
Oliver
InGaN optoelectronics; Nanocathodoluminescence; light emitting diodes; quantum confined Stark effect; scanning transmission electron microscopy; silicon doping