An investigation of new infrared nonlinear optical material: BaCdSnSe4, and three new related centrosymmetric compounds: Ba2SnSe4, Mg2GeSe4, and Ba2Ge2S6.
A series of new metal chalcongenides, BaCdSnSe4 (1), Ba2SnSe4 (2), Mg2GeSe4 (3), and Ba2Ge2S6 (4), were successfully synthesized for the first time. Among them, compounds 2 and 4 were prepared by a molten flux method with Zn as the flux. In their structures, all of them have MQ4 (M = Sn, Ge; Q = S, Se) units. For compound 1, the CdSe4 and SnSe4 groups are connected to form CdSnSe6 layers and these layers are linked together by the Ba atoms. Compounds 2 and 3 are composed of isolated MSe4 (M = Sn, Ge) units and charge-balanced by the Ba or Mg atoms, respectively, while compound 4 has infinite ∞(GeS3)n chains, which is different from the structures of the other three compounds that only have isolated MSe4 (M = Sn, Ge) units. The measured IR and Raman data of the title compounds show wide infrared transmission ranges. The experimental band gaps of compounds 1, 2, 3 and were determined to be 1.79, 1.90, and 2.02 eV, respectively. Band structures were also calculated and indicate that their tetrahedral units, such as [SnSe4], [GeS4] and [GeSe4], determine the energy band gaps of the title compounds, respectively. As for compound 1, based on fundamental light at 2.09 μm, the experimental second harmonic generation (SHG) response is about 1.6 times that of the benchmark AgGaS2, which is also consistent with the calculated value. Based on the above results, compound 1 has promising applications in the IR field as a NLO material.
Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, 40-1 South Beijing Road, Urumqi 830011, China. slpan@ms.xjb.ac.cn.
Kui
K
Wu
Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, 40-1 South Beijing Road, Urumqi 830011, China. slpan@ms.xjb.ac.cn and University of Chinese Academy of Sciences, Beijing 100049, China.
Xin
X
Su
Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, 40-1 South Beijing Road, Urumqi 830011, China. slpan@ms.xjb.ac.cn.
Zhihua
Z
Yang
Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, 40-1 South Beijing Road, Urumqi 830011, China. slpan@ms.xjb.ac.cn.
Shilie
S
Pan