Stable n-type doping of graphene via high-molecular-weight ethylene amines.
We demonstrate a stable and strong n-type doping method to tune the electrical properties of graphene via vapor phase chemical doping with various high-molecular-weight ethylene amines. The resulting carrier concentration after doping with pentaethylenehexamine (PEHA) is as high as -1.01 × 10(13) cm(-2), which reduces the sheet resistance of graphene by up to ∼400% compared to pristine graphene. Our study suggests that the branched structure of the dopant molecules is another important factor that determines the actual doping degree of graphene.
Department of Chemistry, Seoul National University, Seoul 151-744, South Korea. byunghee@snu.ac.kr.
Insu
I
Jo
Youngsoo
Y
Kim
Joonhee
J
Moon
Subeom
S
Park
Jin San
JS
Moon
Won Bae
WB
Park
Jeong Soo
JS
Lee
Byung Hee
BH
Hong