a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths.
The realization of ultra-low power Si-based resistive switching memory technology will be a milestone in the development of next generation non-volatile memory. Here we show that a high performance and ultra-low power resistive random access memory (RRAM) based on an Al/a-SiNx:H/p(+)-Si structure can be achieved by tuning the Si dangling bond conduction paths. We reveal the intrinsic relationship between the Si dangling bonds and the N/Si ratio x for the a-SiNx:H films, which ensures that the programming current can be reduced to less than 1 μA by increasing the value of x. Theoretically calculated current-voltage (I-V) curves combined with the temperature dependence of the I-V characteristics confirm that, for the low-resistance state (LRS), the Si dangling bond conduction paths obey the trap-assisted tunneling model. In the high-resistance state (HRS), conduction is dominated by either hopping or Poole-Frenkel (P-F) processes. Our introduction of hydrogen in the a-SiNx:H layer provides a new way to control the Si dangling bond conduction paths, and thus opens up a research field for ultra-low power Si-based RRAM.
School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.|Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing, 210093, China.
Xiaofan
X
Jiang
School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.|Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing, 210093, China.
Zhongyuan
Z
Ma
School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.|Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing, 210093, China.
Jun
J
Xu
School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.|Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing, 210093, China.
Kunji
K
Chen
School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.|Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing, 210093, China.
Ling
L
Xu
School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.|Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing, 210093, China.
Wei
W
Li
School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.|Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing, 210093, China.
Xinfan
X
Huang
Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
Duan
D
Feng