Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch.
The unique complementary switching behaviour of complementary resistive switches (CRSs) makes them very attractive for logic applications. The implementation of complete Boolean logic functions in a single CRS cell is certainly an extremely important step towards the commercialisation of related logic circuits, but it has not been accomplished to date. Here, we report two methods for the implementation of complete Boolean logic functions in a single CRS cell. The first method is based on the intrinsic switchable diode of a peculiar CRS cell that is composed of two anti-serial bipolar resistive switches with a rectifying high resistance state, while the second method is based directly on the complementary switching behaviour itself of any single CRS cell. The feasibilities of both methods have been theoretically predicted and then experimentally demonstrated on the basis of a Ta/Ta2O5/Pt/Ta2O5/Ta CRS cell. Therefore, these two methods-in particular the complementary switching behaviour itself-based method, which has natural immunity to the sneak-path issue of crossbar logic circuits-are believed to be capable of significantly advancing both our understanding and commercialization of related logic circuits. Moreover, peculiar CRS cells have been demonstrated to be feasible for tri-level storage, which can serve as an alternative method of realising ultra-high-density data storage.
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
Shuang
S
Gao
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
Fei
F
Zeng
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
Minjuan
M
Wang
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
Guangyue
G
Wang
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
Cheng
C
Song
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
Feng
F
Pan