Stretchable Si Logic Devices with Graphene Interconnects.
Stretchable integrated circuits consisting of ultrathin Si transistors connected by multilayer graphene are demonstrated. Graphene interconnects act as an effective countervailing component to maintain the electrical performance of Si integrated circuits against external strain. Concentration of the applied strain on the graphene interconnect parts can stably protect the Si active devices against applied strains over 10%.
School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, South Korea.
Wonho
W
Lee
School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, South Korea.
Houk
H
Jang
Department of Nanomechanics, Nano-Convergence Mechanical Systems Research Division, Korea Institute of Machinery & Materials (KIMM), 156 Gajungbuk-ro, Yuseong-gu, Daejeon, 305-343, South Korea.
Bongkyun
B
Jang
Department of Nanomechanics, Nano-Convergence Mechanical Systems Research Division, Korea Institute of Machinery & Materials (KIMM), 156 Gajungbuk-ro, Yuseong-gu, Daejeon, 305-343, South Korea.
Jae-Hyun
JH
Kim
School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, South Korea.
Jong-Hyun
JH
Ahn
graphene interconnects; single crystals, Si nanomembranes; stretchable devices, logic circuits; stretchable transistors; transfer printing