In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device.
A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from -10 to +35 V. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R and potentially increase the RRAM density.
Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China.
He
H
Tian
Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China.
Haiming
H
Zhao
Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China.
Xue-Feng
XF
Wang
Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China.
Qian-Yi
QY
Xie
Department of Electrical Engineering and Stanford System X Alliance, Stanford University, Stanford, CA, 94305, USA.
Hong-Yu
HY
Chen
Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China.
Mohammad Ali
MA
Mohammad
Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China.
Cheng
C
Li
Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China.
Wen-Tian
WT
Mi
Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China.
Zhi
Z
Bie
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan.
Chao-Hui
CH
Yeh
Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China.
Yi
Y
Yang
Department of Electrical Engineering and Stanford System X Alliance, Stanford University, Stanford, CA, 94305, USA.
H-S Philip
HS
Wong
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan.
Po-Wen
PW
Chiu
Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China.
Tian-Ling
TL
Ren
bilayer graphene; gate controlled; in situ; resistive memory; switching windows