Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components.
N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0.51Zn0.49O active components, which has been reliably achieved by fluorine doping via radio-frequency plasma assisted molecular beam epitaxial growth. Fluorine dopants were demonstrated to be effective donors in Mg0.51Zn0.49O single crystal film having a solar-blind 4.43 eV bandgap, with an average concentration of 1.0 × 10(19) F/cm(3).The dramatically increased carrier concentration (2.85 × 10(17) cm(-3) vs ~10(14) cm(-3)) and decreased resistivity (129 Ω · cm vs ~10(6) Ω cm) indicate that the electrical properties of semi-insulating Mg0.51Zn0.49O film can be delicately regulated by F doping. Interestingly, two donor levels (17 meV and 74 meV) associated with F were revealed by temperature-dependent Hall measurements. A Schottky type metal-semiconductor-metal ultraviolet photodetector manifests a remarkably enhanced photocurrent, two orders of magnitude higher than that of the undoped counterpart. The responsivity is greatly enhanced from 0.34 mA/W to 52 mA/W under 10 V bias. The detectivity increases from 1.89 × 10(9) cm Hz(1/2)/W to 3.58 × 10(10) cm Hz(1/2)/W under 10 V bias at room temperature.These results exhibit F doping serves as a promising pathway for improving the performance of high-Mg-content MgxZn1-xO-based devices.
Key Laboratory for Renewable Energy, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China.
Lishu
L
Liu
Key Laboratory for Renewable Energy, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China.
Zengxia
Z
Mei
Key Laboratory for Renewable Energy, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China.
Yaonan
Y
Hou
Key Laboratory for Renewable Energy, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China.
Huili
H
Liang
Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo, Norway.
Alexander
A
Azarov
Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo, Norway.
Vishnukanthan
V
Venkatachalapathy
Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo, Norway.
Andrej
A
Kuznetsov
Key Laboratory for Renewable Energy, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China.
Xiaolong
X
Du