Tuning Band Alignment Using Interface Dipoles at the Pt/Anatase TiO₂ Interface.
The Schottky barrier heights at the Pt/TiO2 (001) junctions are modulated over 0.8 eV by inserting <1 nm of LaAlO3. The large electric field in the LaAlO3 is stabilized by preserving the continuity of in-plane lattice symmetry at the oxide interface. These results greatly expand the application of dipole engineering to versatile polycrystalline metal/binary oxide functional interfaces.
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA, 94025, USA.|Department of Advanced Materials Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.
Takashi
T
Tachikawa
Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization, Oho, Tsukuba, Ibaraki, 305-0801, Japan.
Makoto
M
Minohara
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA, 94025, USA.
Yasuyuki
Y
Hikita
School of Physics, University of Bristol, H. H. Wills Physics Laboratory, Tyndall Avenue, Bristol, BS8 1TL, UK.
Christopher
C
Bell
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA, 94025, USA.|Department of Applied Physics, Geballe Laboratory for Advanced Materials, Stanford University, 476 Lomita Mall, Stanford University, Stanford, CA, 94305, USA.
Harold Y
HY
Hwang
LaAlO3; TiO2; band alignments; interface dipoles; transition metal oxides