Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application.
In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto silicon (Si) substrates via different synthesized temperatures by using plasma enhanced chemical vapor deposition (PECVD) system. The effects of different synthesized temperatures on the crystal structure, surface morphologies and optical properties have been investigated. The X-ray diffraction (XRD) patterns indicated that the intensity of (0002) diffraction peak became stronger with increasing synthesized temperature until 400 (o)C. The diffraction intensity of (0002) peak gradually became weaker accompanying with appearance of (10-10) diffraction peak as the synthesized temperature up to excess of 400 (o)C. The RT photoluminescence (PL) spectra exhibited a strong near-band-edge (NBE) emission observed at around 375 nm and a negligible deep-level (DL) emission located at around 575 nm under high c-axis ZnO thin films. Field emission scanning electron microscopy (FE-SEM) images revealed the homogeneous surface and with small grain size distribution. The ZnO thin films have also been synthesized onto glass substrates under the same parameters for measuring the transmittance. For the purpose of ultraviolet (UV) photodetector application, the interdigitated platinum (Pt) thin film (thickness ~100 nm) fabricated via conventional optical lithography process and radio frequency (RF) magnetron sputtering. In order to reach Ohmic contact, the device was annealed in argon circumstances at 450 (o)C by rapid thermal annealing (RTA) system for 10 min. After the systematic measurements, the current-voltage (I-V) curve of photo and dark current and time-dependent photocurrent response results exhibited a good responsivity and reliability, indicating that the high c-axis ZnO thin film is a suitable sensing layer for UV photodetector application.
Institute of Manufacturing Technology and Department of Mechanical Engineering, National Taipei University of Technology (TAIPEI TECH).
Chung-Hua
CH
Chao
Institute of Manufacturing Technology and Department of Mechanical Engineering, National Taipei University of Technology (TAIPEI TECH); dhwei@ntut.edu.tw.
Da-Hua
DH
Wei
D004566:Electrodes; D005898:Glass / Q000737:chemistry; D008855:Microscopy, Electron, Scanning; D055620:Optical Phenomena; D058626:Plasma Gases; D010984:Platinum / Q000737:chemistry; D015203:Reproducibility of Results; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D013696:Temperature; D014466:Ultraviolet Rays; D014835:Volatilization; D014961:X-Ray Diffraction; D015034:Zinc Oxide / Q000737:chemistry*
D058626:Plasma Gases; D010984:Platinum; D015034:Zinc Oxide; D012825:Silicon