Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM.
We present results from an imaging study of filamentary conduction in silicon suboxide resistive RAM devices. We used a conductive atomic force microscope to etch through devices while measuring current, allowing us to produce tomograms of conductive filaments. To our knowledge this is the first report of such measurements in an intrinsic resistance switching material.
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK. m.buckwell@ee.ucl.ac.uk t.kenyon@ucl.ac.uk.
Mark
M
Buckwell
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK. m.buckwell@ee.ucl.ac.uk t.kenyon@ucl.ac.uk.
Luca
L
Montesi
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK. m.buckwell@ee.ucl.ac.uk t.kenyon@ucl.ac.uk.
Stephen
S
Hudziak
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK. m.buckwell@ee.ucl.ac.uk t.kenyon@ucl.ac.uk.
Adnan
A
Mehonic
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK. m.buckwell@ee.ucl.ac.uk t.kenyon@ucl.ac.uk.
Anthony J
AJ
Kenyon