Investigation of the Interaction between Perovskite Films with Moisture via in Situ Electrical Resistance Measurement.
Organometal halide perovskites have recently emerged as outstanding semiconductors for solid-state optoelectronic devices. Their sensitivity to moisture is one of the biggest barriers to commercialization. In order to identify the effect of moisture in the degradation process, here we combined the in situ electrical resistance measurement with time-resolved X-ray diffraction analysis to investigate the interaction of CH3NH3PbI(3-x)Cl(x) perovskite films with moisture. Upon short-time exposure, the resistance of the perovskite films decreased and it could be fully recovered, which were ascribed to a mere chemisorption of water molecules, followed by the reversible hydration into CH3NH3PbI(3-x)Cl(x)·H2O. Upon long-time exposure, however, the resistance became irreversible due to the decomposition into PbI2. The results demonstrated the formation of monohydrated intermediate phase when the perovskites interacted with moisture. The role of moisture in accelerating the thermal degradation at 85 °C was also demonstrated. Furthermore, our study suggested that the perovskite films with fewer defects may be more inherently resistant to moisture.
Wuhan National Laboratory for Optoelectronics, and ‡School of Optical and Electronic Information, Huazhong University of Science and Technology , 1037 Luoyu Rd., 430074 Wuhan, China.
Long
L
Hu
Wuhan National Laboratory for Optoelectronics, and ‡School of Optical and Electronic Information, Huazhong University of Science and Technology , 1037 Luoyu Rd., 430074 Wuhan, China.
Gang
G
Shao
Wuhan National Laboratory for Optoelectronics, and ‡School of Optical and Electronic Information, Huazhong University of Science and Technology , 1037 Luoyu Rd., 430074 Wuhan, China.
Tao
T
Jiang
Wuhan National Laboratory for Optoelectronics, and ‡School of Optical and Electronic Information, Huazhong University of Science and Technology , 1037 Luoyu Rd., 430074 Wuhan, China.
Dengbing
D
Li
Wuhan National Laboratory for Optoelectronics, and ‡School of Optical and Electronic Information, Huazhong University of Science and Technology , 1037 Luoyu Rd., 430074 Wuhan, China.
Xinlin
X
Lv
Wuhan National Laboratory for Optoelectronics, and ‡School of Optical and Electronic Information, Huazhong University of Science and Technology , 1037 Luoyu Rd., 430074 Wuhan, China.
Hongya
H
Wang
Wuhan National Laboratory for Optoelectronics, and ‡School of Optical and Electronic Information, Huazhong University of Science and Technology , 1037 Luoyu Rd., 430074 Wuhan, China.
Xinsheng
X
Liu
Wuhan National Laboratory for Optoelectronics, and ‡School of Optical and Electronic Information, Huazhong University of Science and Technology , 1037 Luoyu Rd., 430074 Wuhan, China.
Haisheng
H
Song
Wuhan National Laboratory for Optoelectronics, and ‡School of Optical and Electronic Information, Huazhong University of Science and Technology , 1037 Luoyu Rd., 430074 Wuhan, China.
Jiang
J
Tang
Wuhan National Laboratory for Optoelectronics, and ‡School of Optical and Electronic Information, Huazhong University of Science and Technology , 1037 Luoyu Rd., 430074 Wuhan, China.
Huan
H
Liu
degradation; electrical resistance; hydration; moisture; perovskite films