Properties of Schottky Barrier Diodes on (In(x)Ga(1-x))₂O₃ for 0.01 ≤ x ≤ 0.85 Determined by a Combinatorial Approach.
We investigated properties of an (In(x)Ga(1-x))2O3 thin film with laterally varying cation composition that was realized by a large-area offset pulsed laser deposition approach. Within a two inch diameter thin film, the composition varies between 0.01 ≤ x ≤ 0.85, and three crystallographic phases (cubic, hexagonal, and monoclinic) were identified. We observed a correlation between characteristic parameters of Schottky barrier diodes fabricated on the thin film and its chemical and structural material properties. The highest Schottky barriers and rectification of the diodes were found for low indium contents. The thermal stability of the diodes is also best for Ga-rich parts of the sample. Conversely, the series resistance is lowest for large In content. Overall, the (In(x)Ga(1-x))2O3 alloy is well-suited for potential applications such as solar-blind photodetectors with a tunable absorption edge.
Universität Leipzig , Institut für Experimentelle Physik II, Halbleiterphysik, Linnéstraße 5, 04103 Leipzig, Germany.
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von Wenckstern
Universität Leipzig , Institut für Experimentelle Physik II, Halbleiterphysik, Linnéstraße 5, 04103 Leipzig, Germany.
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Splith
Universität Leipzig , Institut für Experimentelle Physik II, Halbleiterphysik, Linnéstraße 5, 04103 Leipzig, Germany.
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Werner
Universität Leipzig , Institut für Experimentelle Physik II, Halbleiterphysik, Linnéstraße 5, 04103 Leipzig, Germany.
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Müller
Universität Leipzig , Institut für Experimentelle Physik II, Halbleiterphysik, Linnéstraße 5, 04103 Leipzig, Germany.
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Lorenz
Universität Leipzig , Institut für Experimentelle Physik II, Halbleiterphysik, Linnéstraße 5, 04103 Leipzig, Germany.
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Grundmann
D020650:Combinatorial Chemistry Techniques; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D010100:Oxygen / Q000737:chemistry*; D013696:Temperature
D007204:Indium; D005708:Gallium; D010100:Oxygen
Schottky diode; continuous composition spread; group III sesquioxide; phase separation; pulsed laser deposition; segmented target; solid solution