Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers.
Chemical vapor deposition (CVD) is a scalable method able to synthesize MoS2 and WS2 monolayers. In this work, we reduced the synthesis temperature by 200 °C only by introducing tellurium (Te) into the CVD process. The as-synthesized MoS2 and WS2 monolayers show high phase purity and crystallinity. The optical and electrical performance of these materials is comparable to those synthesized at higher temperatures. We believe this work will accelerate the industrial synthesis of these semiconducting monolayers.
Yongji
Y
Gong
Zhong
Z
Lin
Gonglan
G
Ye
Gang
G
Shi
Simin
S
Feng
Yu
Y
Lei
Ana Laura
AL
Elías
Nestor
N
Perea-Lopez
Robert
R
Vajtai
Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Johnson-Rowland Science Center , 110 Eighth Street, Troy, New York 12180, United States.
Humberto
H
Terrones
School of Materials Science and Engineering, School of Electrical and Electronic Engineering, Nanyang Technological University , Singapore 639798, Singapore.
Zheng
Z
Liu
Mauricio
M
Terrones
Pulickel M
PM
Ajayan
chemical vapor deposition; molybdenum disulfide; transition metal dichalcogenides; tungsten disulfide; two-dimensional materials