Graphene Dynamic Synapse with Modulatable Plasticity.
The synaptic activities in the nervous system is the basis of memory and learning behaviors, and the concept of biological synapse has also spurred the development of neuromorphic engineering. In recent years, the hardware implementation of the biological synapse has been achieved based on CMOS circuits, resistive switching memory, and field effect transistors with ionic dielectrics. However, the artificial synapse with regulatable plasticity has never been realized of the device level. Here, an artificial dynamic synapse based on twisted bilayer graphene is demonstrated with tunable plasticity. Due to the ambipolar conductance of graphene, both behaviors of the excitatory synapse and the inhibitory synapse could be realized in a single device. Moreover, the synaptic plasticity could also be modulated by tuning the carrier density of graphene. Because the artificial synapse here could be regulated and inverted via changing the bottom gate voltage, the whole process of synapse development could be imitated. Hence, this work would offer a broad new vista for the 2D material electronics and guide the innovation of neuro-electronics fundamentally.
Institute of Microelectronics, Tsinghua University , Beijing 100084, China.|Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China.
He
H
Tian
Institute of Microelectronics, Tsinghua University , Beijing 100084, China.|Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China.
Wentian
W
Mi
Institute of Microelectronics, Tsinghua University , Beijing 100084, China.|Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China.
Xue-Feng
XF
Wang
Institute of Microelectronics, Tsinghua University , Beijing 100084, China.|Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China.
Haiming
H
Zhao
Institute of Microelectronics, Tsinghua University , Beijing 100084, China.|Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China.
Qian-Yi
QY
Xie
Institute of Microelectronics, Tsinghua University , Beijing 100084, China.|Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China.
Cheng
C
Li
Institute of Microelectronics, Tsinghua University , Beijing 100084, China.|Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China.
Yu-Xing
YX
Li
Institute of Microelectronics, Tsinghua University , Beijing 100084, China.|Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China.
Yi
Y
Yang
Institute of Microelectronics, Tsinghua University , Beijing 100084, China.|Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China.
Tian-Ling
TL
Ren
D006108:Graphite / Q000737:chemistry*
D006108:Graphite
artificial dynamic synapse; graphene; modulatable plasticity; nanoelectronics; neuromorphic device; spike-timing dependent plasticity