Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer.
Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.
Department of Materials Science and Engineering, National Taiwan University, Taipei, 106, Taiwan.
Po-Hsun
PH
Ho
Department of Physics, National Taiwan Normal University, Taipei, 116, Taiwan.|Department of Physics, National Sun Yat-sen University, Kaohsiung, 804, Taiwan.
Chun-Hsiang
CH
Chen
Department of Physics, National Taiwan University, Taipei, 106, Taiwan.|Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 106, Taiwan.
Fu-Yu
FY
Shih
Department of Materials Science and Engineering, National Taiwan University, Taipei, 106, Taiwan.
Yih-Ren
YR
Chang
Department of Materials Science and Engineering, National Taiwan University, Taipei, 106, Taiwan.
Shao-Sian
SS
Li
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 106, Taiwan.
Wei-Hua
WH
Wang
Department of Physics, National Sun Yat-sen University, Kaohsiung, 804, Taiwan.
Min-Chuan
MC
Shih
Department of Physics, National Sun Yat-sen University, Kaohsiung, 804, Taiwan.
Wei-Ting
WT
Chen
Department of Physics, National Taiwan Normal University, Taipei, 116, Taiwan.
Ya-Ping
YP
Chiu
Department of Materials Science and Engineering, National Taiwan University, Taipei, 106, Taiwan.
Min-Ken
MK
Li
Department of Materials Science and Engineering, National Taiwan University, Taipei, 106, Taiwan.|Department of Physics, National Taiwan University, Taipei, 106, Taiwan.
Yi-Siang
YS
Shih
Department of Materials Science and Engineering, National Taiwan University, Taipei, 106, Taiwan.|Taiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology, Taipei, 106, Taiwan.
Chun-Wei
CW
Chen
band gap opening; charge transfer; graphene heterostructures; ultrastrong photoinduced doping