Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor.
The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single-crystal substrate, (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT). In this configuration, the intrinsic properties of graphene were preserved with the use of an hBN flake, and the influence of the polarization field from PMN-PT could be distinguished. During a wide-range gate-voltage (VG) sweep, a sharp inversion of the spontaneous polarization affected the graphene channel conductance asymmetrically as well as an antihysteretic behavior. Additionally, a transition from antihysteresis to normal ferroelectric hysteresis occurred, depending on the V(G) sweep range relative to the ferroelectric coercive field. We developed a model to interpret the complex coupling among antihysteresis, current saturation, and sudden conductance variation in relation with the ferroelectric switching and the polarization-assisted charge trapping, which can be generalized to explain the combination of 2D structured materials with ferroelectrics.
Nahee
N
Park
Haeyong
H
Kang
Jeongmin
J
Park
Yourack
Y
Lee
Yoojoo
Y
Yun
IBULE Photonics Co. Ltd. , 145 Gaetbeol-ro, Yeonsu-gu, Incheon 406-840, Republic of Korea.
Jeong-Ho
JH
Lee
IBULE Photonics Co. Ltd. , 145 Gaetbeol-ro, Yeonsu-gu, Incheon 406-840, Republic of Korea.
Sang-Goo
SG
Lee
Young Hee
YH
Lee
Dongseok
D
Suh
PMN-PT; antihysteresis; ferroelectric memory; ferroelectric single-crystal; graphene transistor