A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement.
The appearance of ferroelectric (FE) and anti-ferroelectric (AFE) properties in HfO2-based thin films is highly intriguing in terms of both the scientific context and practical application in various electronic and energy-related devices. Interestingly, these materials showed a "wake-up effect", which refers to the increase in remanent polarization with increasing electric field cycling number before the occurrence of the fatigue effect. In this work, the wake-up effect from Hf0.5Zr0.5O2 was carefully examined by the pulse-switching experiment. In the pristine state, the Hf0.5Zr0.5O2 film mostly showed FE-like behavior with a small contribution from AFE-like distortion, which could be ascribed to the involvement of the AFE phase. The field cycling of only 100 cycles almost completely transformed the AFE phase into the FE phase by depinning the pinned domains. The influence of field cycling on the interfacial layer was also examined through the pulse-switching experiments.
Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea. cheolsh@snu.ac.kr.
Han Joon
HJ
Kim
Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea. cheolsh@snu.ac.kr.
Min Hyuk
MH
Park
Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea. cheolsh@snu.ac.kr.
Yu Jin
YJ
Kim
Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea. cheolsh@snu.ac.kr.
Young Hwan
YH
Lee
Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea. cheolsh@snu.ac.kr.
Taehwan
T
Moon
Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea. cheolsh@snu.ac.kr.
Keum Do
KD
Kim
Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea. cheolsh@snu.ac.kr.
Seung Dam
SD
Hyun
Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea. cheolsh@snu.ac.kr.
Cheol Seong
CS
Hwang