A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment.
The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge. In this paper, we report on a simple rapid thermal treatment (RTT) method for the fast and direct growth of high-quality, large-scale monolayer graphene on a SiO2/Si substrate from solid carbon sources. The stack structure of a solid carbon layer/copper film/SiO2 is adopted in the RTT process. The inserted copper film does not only act as an active catalyst for the carbon precursor but also serves as a "filter" that prevents premature carbon dissolution, and thus, contributes to graphene growth on SiO2/Si. The produced graphene exhibits a high carrier mobility of up to 3000 cm(2) V(-1) s(-1) at room temperature and standard half-integer quantum oscillations. Our work provides a promising simple transfer-free approach using solid carbon sources to obtain high-quality graphene for practical applications.
Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China. phwang@ust.hk.
Zefei
Z
Wu
Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou, China. rhuang@hstc.edu.cn.
Yanqing
Y
Guo
Department of Engineering, University of Cambridge, Cambridge, UK.
Yuzheng
Y
Guo
Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou, China. rhuang@hstc.edu.cn and Department of Engineering, University of Cambridge, Cambridge, UK.
Rui
R
Huang
Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China. phwang@ust.hk.
Shuigang
S
Xu
Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou, China. rhuang@hstc.edu.cn.
Jie
J
Song
Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China. phwang@ust.hk.
Huanhuan
H
Lu
Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou, China. rhuang@hstc.edu.cn.
Zhenxu
Z
Lin
Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China. phwang@ust.hk.
Yu
Y
Han
Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou, China. rhuang@hstc.edu.cn.
Hongliang
H
Li
Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China. phwang@ust.hk.
Tianyi
T
Han
Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China. phwang@ust.hk.
Jiangxiazi
J
Lin
Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China. phwang@ust.hk.
Yingying
Y
Wu
Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China. phwang@ust.hk.
Gen
G
Long
Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China. phwang@ust.hk.
Yuan
Y
Cai
Department of Materials Science and Engineering, South University of Science and Technology of China, Shenzhen, China.
Chun
C
Cheng
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
Dangsheng
D
Su
Department of Engineering, University of Cambridge, Cambridge, UK.
John
J
Robertson
Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China. phwang@ust.hk.
Ning
N
Wang