title: Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate.
abstract: We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, GaBi, TlAs, and TlSb are found to support a topological phase over a wide range of strains, in addition to BBi, TlN, and TlBi which can be driven into the nontrivial phase via strain. A large band gap of 134 meV is identified in hydrogenated 2 BL film of InBi. One and two BL films of GaBi and 2 BL films of InBi and TlAs on Si(111) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of GaBi. Persistence of the nontrivial phase upon hydrogenations in the III-V thin films suggests that these films are suitable for growing on various substrates.
authors.affiliation: Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan.
authors.forename: Liang-Zi
authors.initials: LZ
authors.lastname: Yao
authors.affiliation: Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan.
authors.forename: Christian P
authors.initials: CP
authors.lastname: Crisostomo
authors.affiliation: Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan.
authors.forename: Chun-Chen
authors.initials: CC
authors.lastname: Yeh
authors.affiliation: Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan.
authors.forename: Shu-Ming
authors.initials: SM
authors.lastname: Lai
authors.affiliation: Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan.
authors.forename: Zhi-Quan
authors.initials: ZQ
authors.lastname: Huang
authors.affiliation: Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan.
authors.forename: Chia-Hsiu
authors.initials: CH
authors.lastname: Hsu
authors.affiliation: Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan.
authors.forename: Feng-Chuan
authors.initials: FC
authors.lastname: Chuang
authors.affiliation: Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546.|Department of Physics, National University of Singapore, Singapore 117542.
authors.forename: Hsin
authors.initials: H
authors.lastname: Lin
authors.affiliation: Department of Physics, Northeastern University, Boston, Massachusetts 02115, USA.
authors.forename: Arun
authors.initials: A
authors.lastname: Bansil