title: Recent Progress in Obtaining Semiconducting Single-Walled Carbon Nanotubes for Transistor Applications.
abstract: High purity semiconducting single-walled carbon nanotubes (s-SWCNTs) with a narrow diameter distribution are required for high-performance transistors. Achieving this goal is extremely challenging because the as-grown material contains mixtures of s-SWCNTs and metallic- (m-) SWCNTs with wide diameter distributions, typically inadequate for integrated circuits. Since 2000, numerous ex situ methods have been proposed to improve the purity of the s-SWCNTs. The majority of these techniques fail to maintain the quality and integrity of the s-SWCNTs with a few notable exceptions. Here, the progress in realizing high purity s-SWCNTs in as-grown and post-processed materials is highlighted. A comparison of transistor parameters (such as on/off ratio and field-effect mobility) obtained from test structures establishes the effectiveness of various methods and suggests opportunities for future improvements.
authors.affiliation: Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, OH, 45433, USA.|National Research Council, Washington, DC, 20001, USA.
authors.forename: Ahmad E
authors.initials: AE
authors.lastname: Islam
authors.affiliation: Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana, IL, 61801, USA.
authors.forename: John A
authors.initials: JA
authors.lastname: Rogers
authors.affiliation: Department of Electrical and Computer Engineering, Purdue University West Lafayette, IN, 47907, USA.
authors.forename: Muhammad A
authors.initials: MA
authors.lastname: Alam
keywords: carbon nanotubes; field-effect mobility; on/off ratios, semiconducting purity; transistor applications