title: Mobile metallic domain walls in an all-in-all-out magnetic insulator.
abstract: Magnetic domain walls are boundaries between regions with different configurations of the same magnetic order. In a magnetic insulator, where the magnetic order is tied to its bulk insulating property, it has been postulated that electrical properties are drastically different along the domain walls, where the order is inevitably disturbed. Here we report the discovery of highly conductive magnetic domain walls in a magnetic insulator, Nd2Ir2O7, that has an unusual all-in-all-out magnetic order, via transport and spatially resolved microwave impedance microscopy. The domain walls have a virtually temperature-independent sheet resistance of ~1 kilohm per square, show smooth morphology with no preferred orientation, are free from pinning by disorders, and have strong thermal and magnetic field responses that agree with expectations for all-in-all-out magnetic order.
authors.affiliation: Geballe Laboratory for Advanced Materials (GLAM), Stanford University, Stanford, CA, USA. Department of Applied Physics, Stanford University, Stanford, CA, USA.
authors.forename: Eric Yue
authors.initials: EY
authors.lastname: Ma
authors.affiliation: Geballe Laboratory for Advanced Materials (GLAM), Stanford University, Stanford, CA, USA.
authors.forename: Yong-Tao
authors.initials: YT
authors.lastname: Cui
authors.affiliation: Department of Applied Physics, University of Tokyo, Tokyo, Japan. RIKEN Center for Emergent Matter Science (CEMS), Saitama, Japan.
authors.forename: Kentaro
authors.initials: K
authors.lastname: Ueda
authors.affiliation: Geballe Laboratory for Advanced Materials (GLAM), Stanford University, Stanford, CA, USA. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Shanghai, China.
authors.forename: Shujie
authors.initials: S
authors.lastname: Tang
authors.affiliation: Center for Advancing Materials Performance from the Nanoscale (CAMP-Nano), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, China.
authors.forename: Kai
authors.initials: K
authors.lastname: Chen
authors.affiliation: Advanced Light Source (ALS), Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
authors.forename: Nobumichi
authors.initials: N
authors.lastname: Tamura
authors.affiliation: Geballe Laboratory for Advanced Materials (GLAM), Stanford University, Stanford, CA, USA.
authors.forename: Phillip M
authors.initials: PM
authors.lastname: Wu
authors.affiliation: Department of Applied Physics, University of Tokyo, Tokyo, Japan. RIKEN Center for Emergent Matter Science (CEMS), Saitama, Japan.
authors.forename: Jun
authors.initials: J
authors.lastname: Fujioka
authors.affiliation: Department of Applied Physics, University of Tokyo, Tokyo, Japan. RIKEN Center for Emergent Matter Science (CEMS), Saitama, Japan. tokura@riken.jp zxshen@stanford.edu.
authors.forename: Yoshinori
authors.initials: Y
authors.lastname: Tokura
authors.affiliation: Geballe Laboratory for Advanced Materials (GLAM), Stanford University, Stanford, CA, USA. Department of Applied Physics, Stanford University, Stanford, CA, USA. tokura@riken.jp zxshen@stanford.edu.
authors.forename: Zhi-Xun
authors.initials: ZX
authors.lastname: Shen