title: Electrical level of defects in single-layer two-dimensional TiO2.
abstract: The remarkable properties of graphene and transition metal dichalcogenides (TMDCs) have attracted increasing attention on two-dimensional materials, but the gate oxide, one of the key components of two-dimensional electronic devices, has rarely reported. We found the single-layer oxide can be used as the two dimensional gate oxide in 2D electronic structure, such as TiO2. However, the electrical performance is seriously influenced by the defects existing in the single-layer oxide. In this paper, a nondestructive and noncontact solution based on spectroscopic ellipsometry has been used to detect the defect states and energy level of single-layer TiO2 films. By fitting the Lorentz oscillator model, the results indicate the exact position of defect energy levels depends on the estimated band gap and the charge state of the point defects of TiO2.
authors.affiliation: ASIC&System State Key Lab, School of Microelectronics, Fudan University, Shanghai 200433, China.
authors.forename: X F
authors.initials: XF
authors.lastname: Song
authors.affiliation: Department of Materials Science, Fudan University, Shanghai 200433, China.
authors.forename: L F
authors.initials: LF
authors.lastname: Hu
authors.affiliation: Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing and Department of Optical Science and Engineering, Fudan University, Shanghai, 200433, China.
authors.forename: D H
authors.initials: DH
authors.lastname: Li
authors.affiliation: ASIC&System State Key Lab, School of Microelectronics, Fudan University, Shanghai 200433, China.
authors.forename: L
authors.initials: L
authors.lastname: Chen
authors.affiliation: ASIC&System State Key Lab, School of Microelectronics, Fudan University, Shanghai 200433, China.
authors.forename: Q Q
authors.initials: QQ
authors.lastname: Sun
authors.affiliation: ASIC&System State Key Lab, School of Microelectronics, Fudan University, Shanghai 200433, China.
authors.forename: P
authors.initials: P
authors.lastname: Zhou
authors.affiliation: ASIC&System State Key Lab, School of Microelectronics, Fudan University, Shanghai 200433, China.
authors.forename: D W
authors.initials: DW
authors.lastname: Zhang