title: Co2Fe6B2/MgO-based perpendicular spin-transfer-torque magnetic-tunnel-junction spin-valve without [Co/Pt] n lower synthetic-antiferromagnetic layer.
abstract: We design a Co2Fe6B2/MgO-based p-MTJ spin-valve without a [Co/Pt] n lower synthetic-antiferromagnetic (SyAF) layer to greatly reduce the 12-inch wafer fabrication cost of the p-MTJ spin-valve. This spin-valve achieve a tunneling magnetoresistance (TMR) of 158% and an exchange field (H ex) of 1.4 kOe at an ex situ annealing temperature of >350 °C, which ensures writing error immunity. In particular, the TMR ratio strongly depends on the body-center-cubic capping-layer nanoscale thickness (t bcc), i.e., the TMR ratio peaks at t bcc = 0.6 nm.
authors.affiliation: MRAM Center, Department of Electronics, Hanyang University, Seoul, 133-791, Korea.
authors.forename: Seung-Eun
authors.initials: SE
authors.lastname: Lee
authors.forename: Tae-Hun
authors.initials: TH
authors.lastname: Shim
authors.forename: Jea-Gun
authors.initials: JG
authors.lastname: Park