title: Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains.
abstract: A monolayer hexagonal boron nitride (h-BN) film with controllable domain morphology and domain size (varying from less than 1 μm to more than 100 μm) with uniform crystalline orientation was successfully synthesized by chemical vapor deposition (CVD). The key for this extremely large single crystalline domain size of a h-BN monolayer is a decrease in the density of nucleation seeds by increasing the hydrogen gas flow during the h-BN growth. Moreover, the well-defined shape of h-BN flakes can be selectively grown by controlling Cu-annealing time under argon atmosphere prior to h-BN growth, which provides the h-BN shape varies in triangular, trapezoidal, hexagonal and complex shapes. The uniform crystalline orientation of h-BN from different nucleation seeds can be easily confirmed by polarized optical microscopy (POM) with a liquid crystal coating. Furthermore, seamlessly merged h-BN flakes without structural domain boundaries were evidence by a selective hydrogen etching after a full coverage of a h-BN film was achieved. This seamless large-area and atomic monolayer of single crystalline h-BN film can offer as an ideal and practical template of graphene-based devices or alternative two-dimensional materials for industrial applications with scalability.
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 440-746, Korea.
authors.forename: Qinke
authors.initials: Q
authors.lastname: Wu
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon, 440-746, Korea.
authors.forename: Ji-Hoon
authors.initials: JH
authors.lastname: Park
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 440-746, Korea.
authors.forename: Sangwoo
authors.initials: S
authors.lastname: Park
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 440-746, Korea.
authors.forename: Seong Jun
authors.initials: SJ
authors.lastname: Jung
authors.affiliation: Nano Electronics Lab., Samsung Advanced Institute of Technology (SAIT), Suwon, 443-803, Korea.
authors.forename: Hwansoo
authors.initials: H
authors.lastname: Suh
authors.affiliation: Interdisciplinary School of Green Energy and Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 689-798, Korea.
authors.forename: Noejung
authors.initials: N
authors.lastname: Park
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 440-746, Korea.|Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University (SKKU), Suwon, 440-746, Korea.
authors.forename: Winadda
authors.initials: W
authors.lastname: Wongwiriyapan
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 440-746, Korea.|Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University (SKKU), Suwon, 440-746, Korea.|College of Information and Communication, Sungkyunkwan University (SKKU), Suwon, 440-746, Korea.
authors.forename: Sungjoo
authors.initials: S
authors.lastname: Lee
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon, 440-746, Korea.
authors.forename: Young Hee
authors.initials: YH
authors.lastname: Lee
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 440-746, Korea.|Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon, 440-746, Korea.|Department of Physics, Sungkyunkwan University (SKKU), Suwon, 440-746, Korea.
authors.forename: Young Jae
authors.initials: YJ
authors.lastname: Song