title: Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot.
abstract: Standard semiconductor fabrication techniques are used to fabricate a quantum dot (QD) made of WS2, where Coulomb oscillations were found. The full-width-at-half-maximum of the Coulomb peaks increases linearly with temperature while the height of the peaks remains almost independent of temperature, which is consistent with standard semiconductor QD theory. Unlike graphene etched QDs, where Coulomb peaks belonging to the same QD can have different temperature dependences, these results indicate the absence of the disordered confining potential. This difference in the potential-forming mechanism between graphene etched QDs and WS2 QDs may be the reason for the larger potential fluctuation found in graphene QDs.
authors.affiliation: Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei, Anhui 230026, China.|Synergetic Innovation Center of Quantum Information &Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
authors.forename: Xiang-Xiang
authors.initials: XX
authors.lastname: Song
authors.affiliation: Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei, Anhui 230026, China.|Synergetic Innovation Center of Quantum Information &Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
authors.forename: Zhuo-Zhi
authors.initials: ZZ
authors.lastname: Zhang
authors.affiliation: Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei, Anhui 230026, China.|Synergetic Innovation Center of Quantum Information &Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
authors.forename: Jie
authors.initials: J
authors.lastname: You
authors.affiliation: Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei, Anhui 230026, China.|Synergetic Innovation Center of Quantum Information &Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
authors.forename: Di
authors.initials: D
authors.lastname: Liu
authors.affiliation: Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei, Anhui 230026, China.|Synergetic Innovation Center of Quantum Information &Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
authors.forename: Hai-Ou
authors.initials: HO
authors.lastname: Li
authors.affiliation: Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei, Anhui 230026, China.|Synergetic Innovation Center of Quantum Information &Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
authors.forename: Gang
authors.initials: G
authors.lastname: Cao
authors.affiliation: Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei, Anhui 230026, China.|Synergetic Innovation Center of Quantum Information &Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
authors.forename: Ming
authors.initials: M
authors.lastname: Xiao
authors.affiliation: Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei, Anhui 230026, China.|Synergetic Innovation Center of Quantum Information &Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
authors.forename: Guo-Ping
authors.initials: GP
authors.lastname: Guo