title: Doping-Induced Universal Conductance Fluctuations in GaN Nanowires.
abstract: The transport properties of Ge-doped single GaN nanowires are investigated, which exhibit a weak localization effect as well as universal conductance fluctuations at low temperatures. By analyzing these quantum interference effects, the electron phase coherence length was determined. Its temperature dependence indicates that in the case of highly doped nanowires electron-electron scattering is the dominant dephasing mechanism, while for the slightly doped nanowires dephasing originates from Nyquist-scattering. The change of the dominant scattering mechanism is attributed to a modification of the carrier confinement caused by the Ge-doping. The results demonstrate that the phase coherence length can be tuned by the donor concentration making Ge-doped GaN nanowires an ideal model system for studying the influence of impurities on quantum-interference effects in mesoscopic and nanoscale systems.
authors.affiliation: Institute of Experimental Physics I, Justus-Liebig University , Heinrich-Buff-Ring 16, D-35392 Giessen, Germany.|Institute of Physical Chemistry, Justus-Liebig University , Heinrich-Buff-Ring 17, D-35392 Giessen, Germany.
authors.forename: Matthias T
authors.initials: MT
authors.lastname: Elm
authors.affiliation: Institute of Experimental Physics I, Justus-Liebig University , Heinrich-Buff-Ring 16, D-35392 Giessen, Germany.
authors.forename: Patrick
authors.initials: P
authors.lastname: Uredat
authors.affiliation: Institute of Physical Chemistry, Justus-Liebig University , Heinrich-Buff-Ring 17, D-35392 Giessen, Germany.
authors.forename: Jan
authors.initials: J
authors.lastname: Binder
authors.affiliation: Institute of Experimental Physics I, Justus-Liebig University , Heinrich-Buff-Ring 16, D-35392 Giessen, Germany.
authors.forename: Lars
authors.initials: L
authors.lastname: Ostheim
authors.affiliation: Institute of Experimental Physics I, Justus-Liebig University , Heinrich-Buff-Ring 16, D-35392 Giessen, Germany.
authors.forename: Markus
authors.initials: M
authors.lastname: Schäfer
authors.affiliation: Institute of Experimental Physics I, Justus-Liebig University , Heinrich-Buff-Ring 16, D-35392 Giessen, Germany.
authors.forename: Pascal
authors.initials: P
authors.lastname: Hille
authors.affiliation: Institute of Experimental Physics I, Justus-Liebig University , Heinrich-Buff-Ring 16, D-35392 Giessen, Germany.
authors.forename: Jan
authors.initials: J
authors.lastname: Müßener
authors.affiliation: Institute of Experimental Physics I, Justus-Liebig University , Heinrich-Buff-Ring 16, D-35392 Giessen, Germany.
authors.forename: Jörg
authors.initials: J
authors.lastname: Schörmann
authors.affiliation: Institute of Experimental Physics I, Justus-Liebig University , Heinrich-Buff-Ring 16, D-35392 Giessen, Germany.
authors.forename: Martin
authors.initials: M
authors.lastname: Eickhoff
authors.affiliation: Institute of Experimental Physics I, Justus-Liebig University , Heinrich-Buff-Ring 16, D-35392 Giessen, Germany.
authors.forename: Peter J
authors.initials: PJ
authors.lastname: Klar
keywords: GaN; Ge-doping; nanowires; phase coherence length; universal conductance fluctuations; weak localization