title: Improving Memory Performances by Adjusting the Symmetry and Polarity of O-Fluoroazobenzene-Based Molecules.
abstract: Three O-fluoroazobenzene-based molecules were chosen as memory-active molecules: FAZO-1 with a D-A2-D symmetric structure, FAZO-2 with an A1-A2-A1 symmetric structure, and FAZO-3 with a D-A2-A1 asymmetric structure. Both FAZO-1 and FAZO-2 had a lower molecular polarity, whereas FAZO-3 had a higher polarity. The fabricated indium-tin oxide (ITO)/FAZO-1/Al (Au) and ITO/FAZO-2/Al (Au) memory devices both exhibited volatile static random access memory (SRAM) behavior, whereas the ITO/FAZO-3/Al (Au) device showed nonvolatile ternary write-once-read-many-times (WORM) behavior. It should be noted that the reproducibility of these devices was considerably high, which is significant for practical application in memory devices. In addition, the different memory performances of the three active materials were determined to be attributable to the stability of electric-field-induced charge-transfer complexes. Therefore, the switching memory behavior could be tuned by adjusting the molecular polarity.
authors.affiliation: College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China.
authors.forename: Quan
authors.initials: Q
authors.lastname: Liu
authors.affiliation: Functional Nano & Soft Materials Laboratory (FUNSOM) and, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China.
authors.forename: Huilong
authors.initials: H
authors.lastname: Dong
authors.affiliation: Functional Nano & Soft Materials Laboratory (FUNSOM) and, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China.
authors.forename: Youyong
authors.initials: Y
authors.lastname: Li
authors.affiliation: College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China.
authors.forename: Hua
authors.initials: H
authors.lastname: Li
authors.affiliation: College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China.
authors.forename: Dongyun
authors.initials: D
authors.lastname: Chen
authors.affiliation: College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China.
authors.forename: Lihua
authors.initials: L
authors.lastname: Wang
authors.affiliation: College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China. xuqingfeng@suda.edu.cn.
authors.forename: Qingfeng
authors.initials: Q
authors.lastname: Xu
authors.affiliation: College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China. lujm@suda.edu.cn.
authors.forename: Jianmei
authors.initials: J
authors.lastname: Lu
keywords: azo compounds; charge transfer; donor-acceptor systems; molecular devices; polarity