title: On the Extraction of Charge Carrier Mobility in High-Mobility Organic Transistors.
abstract: Transistor parameter extraction by the conventional transconductance method can lead to a mobility overestimate. Organic transistors undergoing major contact resistance experience a significant drop in mobility upon mild annealing. Before annealing, strong field-dependent contact resistance yields nonlinear transfer curves with locally high transconductances, resulting in a mobility overestimate. After annealing, a contact resistance below 200 Ω cm is achieved, which is stable over a wide V(G) range.
authors.affiliation: Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.|The Institute of Scientific and Industrial Research (ISIR), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan.
authors.forename: Takafumi
authors.initials: T
authors.lastname: Uemura
authors.affiliation: imec, Kapeldreef 75, B-3001, Leuven, Belgium.
authors.forename: Cedric
authors.initials: C
authors.lastname: Rolin
authors.affiliation: imec, Kapeldreef 75, B-3001, Leuven, Belgium.
authors.forename: Tung-Huei
authors.initials: TH
authors.lastname: Ke
authors.affiliation: imec, Kapeldreef 75, B-3001, Leuven, Belgium.
authors.forename: Pavlo
authors.initials: P
authors.lastname: Fesenko
authors.affiliation: imec, Kapeldreef 75, B-3001, Leuven, Belgium.
authors.forename: Jan
authors.initials: J
authors.lastname: Genoe
authors.affiliation: imec, Kapeldreef 75, B-3001, Leuven, Belgium.
authors.forename: Paul
authors.initials: P
authors.lastname: Heremans
authors.affiliation: Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.|The Institute of Scientific and Industrial Research (ISIR), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan.
authors.forename: Jun
authors.initials: J
authors.lastname: Takeya
keywords: carrier mobility; contact resistance; field-effect mobility; organic transistors