title: Growth of Silicon Nanosheets Under Diffusion-Limited Aggregation Environments.
abstract: The two-dimensional (2D) growth of cubic-structured (silicon) Si nanosheets (SiNSs) was investigated. Freestanding, single-crystalline SiNSs with a thickness of 5-20 nm were grown on various Si substrates under an atmospheric chemical vapor deposition process. Systematic investigation indicated that a diffusion-limited aggregation (DLA) environment that leads to dendritic growth in <110> directions at the initial stage is essential for 2D growth. The kinetic aspects under DLA environments that ascribe to the dendritic and 2D growth were discussed. Under the more dilute conditions made by addition of Ar to the flow of H2, the SiNSs grew epitaxially on the substrates with periodic arrangement at a specific angle depending on the orientation of the substrate. It reveals that SiNSs always grew two dimensionally with exposing (111) surfaces. That is thermodynamically favorable.
authors.affiliation: Department of Materials Science and Engineering, Yonsei University, 120-749, Seoul, South Korea.
authors.forename: Jaejun
authors.initials: J
authors.lastname: Lee
authors.affiliation: Department of Materials Science and Engineering, Yonsei University, 120-749, Seoul, South Korea.
authors.forename: Sung Wook
authors.initials: SW
authors.lastname: Kim
authors.affiliation: Department of Materials Science and Engineering, Yonsei University, 120-749, Seoul, South Korea.
authors.forename: Ilsoo
authors.initials: I
authors.lastname: Kim
authors.affiliation: Department of Materials Science and Engineering, Yonsei University, 120-749, Seoul, South Korea.
authors.forename: Dongjea
authors.initials: D
authors.lastname: Seo
authors.affiliation: Department of Materials Science and Engineering, Yonsei University, 120-749, Seoul, South Korea. hjc@yonsei.ac.kr.
authors.forename: Heon-Jin
authors.initials: HJ
authors.lastname: Choi
keywords: CVD; Diffusion-limited aggregation; Epitaxial growth; Silicon nanosheets