title: Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection.
abstract: Extreme sensitivity of room-temperature photoelectric effect for terahertz (THz) detection is demonstrated by generating extra carriers in an electromagnetic induced well located at the semiconductor, using a wrapped metal-semiconductor-metal configuration. The excellent performance achieved with THz detectors shows great potential to open avenues for THz detection.
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, P. R. China.|Key Laboratory of Space Active Opto-Electronics Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, P. R. China.
authors.forename: Zhiming
authors.initials: Z
authors.lastname: Huang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, P. R. China.
authors.forename: Wei
authors.initials: W
authors.lastname: Zhou
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, P. R. China.
authors.forename: Jinchao
authors.initials: J
authors.lastname: Tong
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, P. R. China.
authors.forename: Jingguo
authors.initials: J
authors.lastname: Huang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, P. R. China.
authors.forename: Cheng
authors.initials: C
authors.lastname: Ouyang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, P. R. China.
authors.forename: Yue
authors.initials: Y
authors.lastname: Qu
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, P. R. China.
authors.forename: Jing
authors.initials: J
authors.lastname: Wu
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, P. R. China.
authors.forename: Yanqing
authors.initials: Y
authors.lastname: Gao
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, P. R. China.
authors.forename: Junhao
authors.initials: J
authors.lastname: Chu
keywords: electromagnetic induced wells; photoelectric effect; terahertz detection