title: Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric.
abstract: Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this system, the enhanced capacitance of the hybrid structure can be understood by the formation of a space charge layer at the graphene/Al2O3 interface. The electrical properties of the interface can be further explained by the electrical double layer (EDL) model dominated by the diffuse layer.
authors.affiliation: Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Yuseong P. O. Box 107, Daejeon 305-600, Republic of Korea.|Department of Physics, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 440-746, Republic of Korea.
authors.forename: Bok
authors.initials: B
authors.lastname: Ki Min
authors.affiliation: Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616-5294, USA.
authors.forename: Seong K
authors.initials: SK
authors.lastname: Kim
authors.affiliation: Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Yuseong P. O. Box 107, Daejeon 305-600, Republic of Korea.
authors.forename: Seong
authors.initials: S
authors.lastname: Jun Kim
authors.affiliation: Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Yuseong P. O. Box 107, Daejeon 305-600, Republic of Korea.
authors.forename: Sung
authors.initials: S
authors.lastname: Ho Kim
authors.affiliation: Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Yuseong P. O. Box 107, Daejeon 305-600, Republic of Korea.
authors.forename: Min-A
authors.initials: MA
authors.lastname: Kang
authors.affiliation: Department of Physics, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 440-746, Republic of Korea.
authors.forename: Chong-Yun
authors.initials: CY
authors.lastname: Park
authors.affiliation: Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Yuseong P. O. Box 107, Daejeon 305-600, Republic of Korea.
authors.forename: Wooseok
authors.initials: W
authors.lastname: Song
authors.affiliation: Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Yuseong P. O. Box 107, Daejeon 305-600, Republic of Korea.
authors.forename: Sung
authors.initials: S
authors.lastname: Myung
authors.affiliation: Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Yuseong P. O. Box 107, Daejeon 305-600, Republic of Korea.
authors.forename: Jongsun
authors.initials: J
authors.lastname: Lim
authors.affiliation: Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Yuseong P. O. Box 107, Daejeon 305-600, Republic of Korea.
authors.forename: Ki-Seok
authors.initials: KS
authors.lastname: An