title: Localized-surface-plasmon-enhanced multifunction silicon nanomembrane Schottky diodes based on Au nanoparticles.
abstract: Au nanoparticle (NP)-modified Si nanomembrane (Si NM) Schottky barrier diodes (SBDs) were fabricated by using a transfer-printing method to create pedestals using only one photomask on a flexible substrate. The transfer using the pedestals afforded a yield of >95% with no significant cracks. The plasmonic Au NPs can facilitate the improvement of the incident optical absorption. The Au NP-modified Si NM SBD exhibited enhanced photoresponse characteristics with an external quantum efficiency (η(EQE)) of 34%, a photosensitivity (P) of 27 at a voltage bias of -5 V, a light intensity of 1.2 W cm(-2), and a responsivity (R(ph)) of 0.21 A W(-1). Additionally, the mechanical bending characteristics of the device were observed while a compressive strain up to 0.62% was applied to the diode. The results suggest that the Au NP-modified Si NM SBD has great potential for use in multifunction devices as a strain sensor and photosensor.
authors.affiliation: Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul 136-713, Korea.
authors.forename: Hyeon Jun
authors.initials: HJ
authors.lastname: Ha
authors.forename: Byung Hyun
authors.initials: BH
authors.lastname: Kang
authors.forename: Seung-Won
authors.initials: SW
authors.lastname: Yeom
authors.forename: Junsu
authors.initials: J
authors.lastname: Park
authors.forename: Yun-Hi
authors.initials: YH
authors.lastname: Lee
authors.forename: Byeong-Kwon
authors.initials: BK
authors.lastname: Ju