title: Three-Dimensional Quantum Confinement of Charge Carriers in Self-Organized AlGaN Nanowires: A Viable Route to Electrically Injected Deep Ultraviolet Lasers.
abstract: We report on the molecular beam epitaxial growth and structural characterization of self-organized AlGaN nanowire arrays on Si substrate with high luminescence efficiency emission in the deep ultraviolet (UV) wavelength range. It is found that, with increasing Al concentration, atomic-scale compositional modulations can be realized, leading to three-dimensional quantum confinement of charge carriers. By further exploiting the Anderson localization of light, we have demonstrated, for the first time, electrically injected AlGaN lasers in the deep UV band operating at room temperature. The laser operates at ∼289 nm and exhibits a threshold of 300 A/cm(2), which is significantly smaller compared to the previously reported electrically injected AlGaN multiple quantum well lasers.
authors.affiliation: Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: S
authors.initials: S
authors.lastname: Zhao
authors.affiliation: Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University , 1280 Main Street West, Hamilton, Ontario L8S 4M1, Canada.
authors.forename: S Y
authors.initials: SY
authors.lastname: Woo
authors.affiliation: Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University , 1280 Main Street West, Hamilton, Ontario L8S 4M1, Canada.
authors.forename: M
authors.initials: M
authors.lastname: Bugnet
authors.affiliation: Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: X
authors.initials: X
authors.lastname: Liu
authors.affiliation: Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: J
authors.initials: J
authors.lastname: Kang
authors.affiliation: Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University , 1280 Main Street West, Hamilton, Ontario L8S 4M1, Canada.
authors.forename: G A
authors.initials: GA
authors.lastname: Botton
authors.affiliation: Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: Z
authors.initials: Z
authors.lastname: Mi
keywords: Anderson localization; GaN; LED; laser; nanowire; quantum dot; ultraviolet