title: A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics.
abstract: This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.
authors.affiliation: School of Electronic Science and Technology, Faculty of Electronic Information and Electronic Engineering, Dalian University of Technology, Dalian 116024, China. mailhhy@163.com.|Institute of New Electron Devices, Hangzhou Dianzi University, Hangzhou 310018, China. mailhhy@163.com.
authors.forename: Haiyun
authors.initials: H
authors.lastname: Huang
authors.affiliation: School of Electronic Science and Technology, Faculty of Electronic Information and Electronic Engineering, Dalian University of Technology, Dalian 116024, China. dwang121@dlut.edu.cn.
authors.forename: Dejun
authors.initials: D
authors.lastname: Wang
authors.affiliation: College of Electronic Science & Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China. yuex@njupt.edu.cn.
authors.forename: Yue
authors.initials: Y
authors.lastname: Xu
keywords: Hall offset; dynamic offset cancellation technique; monolithic Hall sensor; sensitivity and linearity