title: High conductivity organic thin films for spintronics: the interface resistance bottleneck.
abstract: Highly electrochemically doped poly(2,5-bis(3-dodecyl-2-yl)-thieno[3,2-b]thiophene (pBTTT) thin films exhibiting remarkably high conductivities values reaching 3000-5000 Ω(-1) cm(-1) are investigated. Experimental evidence of delocalized transport properties of this material at the onset of metallicity makes it an ideal candidate for spin valve device integration. Nevertheless, the interface resistance between the polymer and metallic electrodes is orders of magnitudes larger than the expected spin resistance of the active channel. This prevents the collection of a spin current. This finding can explain the lack of success in making lateral organic spin valves reported in the literature, especially the related absence of spin signals in non-local spin valve and Hanle current measurements in organic thin films.
authors.affiliation: Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), Université de Strasbourg, UMR 7504 CNRS-UdS, 23 rue du Loess, 67034 Strasbourg, France.
authors.forename: S
authors.initials: S
authors.lastname: Zanettini
authors.forename: G
authors.initials: G
authors.lastname: Chaumy
authors.forename: P
authors.initials: P
authors.lastname: Chávez
authors.forename: N
authors.initials: N
authors.lastname: Leclerc
authors.forename: C
authors.initials: C
authors.lastname: Etrillard
authors.forename: B
authors.initials: B
authors.lastname: Leconte
authors.forename: F
authors.initials: F
authors.lastname: Chevrier
authors.forename: J-F
authors.initials: JF
authors.lastname: Dayen
authors.forename: B
authors.initials: B
authors.lastname: Doudin