title: InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption.
abstract: Self-assembled InGaN quantum dots (QDs) were grown by metal-organic chemical vapour deposition with growth interruption at low V/III ratio and low growth temperature on sapphire substrates. The effects of the interruption time on the morphological and optical properties of InGaN QDs were studied. The results show that the growth interruption can modify the dimension and distribution of InGaN QDs, and cause the QD emission wavelength to blue shift with increasing interruption time. A density of InGaN QDs of about 4.5 × 10(10) cm(-2) with an average lateral size of 11.5 nm and an average height of 1.6 nm can be obtained by using a growth interruption time of 60 s.
authors.affiliation: Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Ta Hsueh Road, Hsinchu 30050, Taiwan, Republic of China.
authors.forename: H H
authors.initials: HH
authors.lastname: Yao
authors.forename: T C
authors.initials: TC
authors.lastname: Lu
authors.forename: G S
authors.initials: GS
authors.lastname: Huang
authors.forename: C Y
authors.initials: CY
authors.lastname: Chen
authors.forename: W D
authors.initials: WD
authors.lastname: Liang
authors.forename: H C
authors.initials: HC
authors.lastname: Kuo
authors.forename: S C
authors.initials: SC
authors.lastname: Wang