title: Silver nanowires decorated with silver nanoparticles for low-haze flexible transparent conductive films.
abstract: Silver nanowires have attracted much attention for use in flexible transparent conductive films (TCFs) due to their low sheet resistance and flexibility. However, the haze was too high for replacing indium-tin-oxide in high-quality display devices. Herein, we report flexible TCFs, which were prepared using a scalable bar-coating method, with a low sheet resistance (24.1 Ω/sq at 96.4% transmittance) and a haze (1.04%) that is comparable to that of indium-tin-oxide TCFs. To decrease the haze and maintain a low sheet resistance, small diameter silver nanowires (~20 nm) were functionalized with low-temperature surface-sintering silver nanoparticles (~5 nm) using bifunctional cysteamine. The silver nanowire-nanoparticle ink stability was excellent. The sheet resistance of the TCFs was decreased by 29.5% (from 34.2 to 24.1 Ω/sq) due to the functionalization at a low curing temperature of 85 °C. The TCFs were highly flexible and maintained their stability for more than 2 months and 10,000 bending cycles after coating with a protective layer.
authors.affiliation: School of Mechanical Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Mini Mol
authors.initials: MM
authors.lastname: Menamparambath
authors.affiliation: Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: C Muhammed
authors.initials: CM
authors.lastname: Ajmal
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803, Republic of Korea.
authors.forename: Kwang Hee
authors.initials: KH
authors.lastname: Kim
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803, Republic of Korea.
authors.forename: Daejin
authors.initials: D
authors.lastname: Yang
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803, Republic of Korea.
authors.forename: Jongwook
authors.initials: J
authors.lastname: Roh
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803, Republic of Korea.
authors.forename: Hyeon Cheol
authors.initials: HC
authors.lastname: Park
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803, Republic of Korea.
authors.forename: Chan
authors.initials: C
authors.lastname: Kwak
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803, Republic of Korea.|School of Advanced Materials Science &Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Jae-Young
authors.initials: JY
authors.lastname: Choi
authors.affiliation: School of Mechanical Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea.|Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Seunghyun
authors.initials: S
authors.lastname: Baik