title: Scalable, full-colour and controllable chromotropic plasmonic printing.
abstract: Plasmonic colour printing has drawn wide attention as a promising candidate for the next-generation colour-printing technology. However, an efficient approach to realize full colour and scalable fabrication is still lacking, which prevents plasmonic colour printing from practical applications. Here we present a scalable and full-colour plasmonic printing approach by combining conjugate twin-phase modulation with a plasmonic broadband absorber. More importantly, our approach also demonstrates controllable chromotropic capability, that is, the ability of reversible colour transformations. This chromotropic capability affords enormous potentials in building functionalized prints for anticounterfeiting, special label, and high-density data encryption storage. With such excellent performances in functional colour applications, this colour-printing approach could pave the way for plasmonic colour printing in real-world commercial utilization.
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.|School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China.
authors.forename: Jiancai
authors.identifier: http://orcid.org/0000-0001-8818-6089
authors.initials: J
authors.lastname: Xue
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.|School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China.
authors.forename: Zhang-Kai
authors.initials: ZK
authors.lastname: Zhou
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.|School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China.
authors.forename: Zhiqiang
authors.initials: Z
authors.lastname: Wei
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.|School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China.
authors.forename: Rongbin
authors.initials: R
authors.lastname: Su
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.|School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China.
authors.forename: Juan
authors.initials: J
authors.lastname: Lai
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.|School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China.
authors.forename: Juntao
authors.initials: J
authors.lastname: Li
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.|School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China.
authors.forename: Chao
authors.initials: C
authors.lastname: Li
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.|School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China.
authors.forename: Tengwei
authors.initials: T
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.|School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China.
authors.forename: Xue-Hua
authors.initials: XH
authors.lastname: Wang