title: Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction.
abstract: Laser-assisted phosphorus doping is demonstrated on ultrathin transition-metal dichalcogenides (TMDCs) including n-type MoS2 and p-type WSe2 . Temporal and spatial control of the doping is achieved by varying the laser irradiation power and time, demonstrating wide tunability and high site selectivity with high stability. The laser-assisted doping method may enable a new avenue for functionalizing TMDCs for customized nanodevice applications.
authors.affiliation: Laser Thermal Lab, Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA.
authors.forename: Eunpa
authors.initials: E
authors.lastname: Kim
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
authors.forename: Changhyun
authors.initials: C
authors.lastname: Ko
authors.affiliation: School of Mechanical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors.forename: Kyunghoon
authors.initials: K
authors.lastname: Kim
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
authors.forename: Yabin
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
authors.forename: Joonki
authors.initials: J
authors.lastname: Suh
authors.affiliation: Laser Thermal Lab, Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA.
authors.forename: Sang-Gil
authors.initials: SG
authors.lastname: Ryu
authors.affiliation: School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
authors.forename: Kedi
authors.initials: K
authors.lastname: Wu
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.|School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.|Research Center for Light Emitting Diodes (LED), Zhejiang Normal University, Jinhua, 321004, P. R. China.
authors.forename: Xiuqing
authors.initials: X
authors.lastname: Meng
authors.affiliation: School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
authors.forename: Aslihan
authors.initials: A
authors.lastname: Suslu
authors.affiliation: School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
authors.forename: Sefaattin
authors.initials: S
authors.lastname: Tongay
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.|Division of Materials Sciences and Engineering, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Junqiao
authors.initials: J
authors.lastname: Wu
authors.affiliation: Laser Thermal Lab, Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA.
authors.forename: Costas P
authors.initials: CP
authors.lastname: Grigoropoulos
keywords: 2D materials; field-effect transistors; laser-assisted doping; site selective; transition metal dichalcogenide