title: Effects of Interface Layers and Domain Walls on the Ferroelectric-Resistive Switching Behavior of Au/BiFeO3/La0.6Sr0.4MnO3 Heterostructures.
abstract: The electric field effects on the electric and magnetic properties in multiferroic heterostructures are important for not only understanding the mechanisms of certain novel physical phenomena occurring at heterointerfaces but also offering a route for promising spintronic applications. Using the Au/BiFeO3/La0.6Sr0.4MnO3 (Au/BFO/LSMO) multiferroic heterostructure as a model system, we investigated the ferroelectric-resistive switching (RS) behaviors of the heterostructure. Via the manipulation of the BFO ferroelectric polarizations, the nonvolatile tristate of RS is observed, which is closely related to the Au/BFO and BFO/LSMO interface layers and the highly conducting BFO domain walls (DWs). More interestingly, according to the magnetic field dependence of the RS behavior, the negative magnetoresistance effect of the third resistance state, corresponding to the abnormal current peak in current-pulse voltage hysteresis near the electric coercive field, is also observed at room temperature, which mainly arises from the possible oxygen vacancy accumulation and Fe ion valence variation in the DWs.
authors.affiliation: Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.
authors.forename: Lei
authors.initials: L
authors.lastname: Feng
authors.affiliation: Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.
authors.forename: Shengwei
authors.initials: S
authors.lastname: Yang
authors.affiliation: Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.
authors.forename: Yue
authors.initials: Y
authors.lastname: Lin
authors.affiliation: Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.
authors.forename: Dalong
authors.initials: D
authors.lastname: Zhang
authors.affiliation: Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.
authors.forename: Weichuan
authors.initials: W
authors.lastname: Huang
authors.affiliation: Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.
authors.forename: Wenbo
authors.initials: W
authors.lastname: Zhao
authors.affiliation: Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.
authors.forename: Yuewei
authors.initials: Y
authors.lastname: Yin
authors.affiliation: Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.
authors.forename: Sining
authors.initials: S
authors.lastname: Dong
authors.affiliation: Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China , Hefei 230026, P. R. China.|Collaborative Innovation Center of Advanced Microstructures , Nanjing 210093, P. R. China.
authors.forename: Xiaoguang
authors.initials: X
authors.lastname: Li
keywords: domain walls; ferroelectric heterostructures; interface layer; ion interdiffusion; resistive switching