title: High responsivity SiGe heterojunction phototransistor on silicon photonics platform.
abstract: We report on a novel near infrared SiGe phototransistor fabricated by a standard silicon photonics foundry. The device is first investigated by simulations. The fabricated devices are characterized in terms of current-voltage characteristics at different optical power. Typical phototransistors exhibit 1.55µm record responsivity at low optical power exceeding 232A/W and 42A/W at 5V and 1V bias, respectively. A differential detection scheme is also proposed for the dark current cancellation to significantly increase the device sensitivity.
authors.forename: V
authors.initials: V
authors.lastname: Sorianello
authors.forename: G
authors.initials: G
authors.lastname: De Angelis
authors.forename: A
authors.initials: A
authors.lastname: De Iacovo
authors.forename: L
authors.initials: L
authors.lastname: Colace
authors.forename: S
authors.initials: S
authors.lastname: Faralli
authors.forename: M
authors.initials: M
authors.lastname: Romagnoli