title: Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes.
abstract: We report on the demonstration of substrate-free nanowire/polydimethylsiloxane (PDMS) membrane light-emitting diodes (LEDs). Metal-organic vapour-phase epitaxy (MOVPE)-grown InGaN/GaN core-shell nanowires were encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was spin-coated and the membrane was manually peeled from the sapphire substrate, flipped upside down onto a steel holder, and transparent indium tin oxide (ITO) contact to n-GaN was deposited. The fabricated LEDs demonstrate rectifying diode characteristics. For the electroluminescence (EL) measurements, the samples were manually bonded using silver paint. The EL spectra measured at different applied voltages demonstrate a blue shift with the current increase. This shift is explained by the current injection into the InGaN areas of the active region with different average indium content.
authors.affiliation: Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405, Orsay, France. vladimir.neplokh@u-psud.fr.
authors.forename: Vladimir
authors.initials: V
authors.lastname: Neplokh
authors.affiliation: Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405, Orsay, France.|Univ. Grenoble Alpes, 38000, Grenoble, France.|CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group, 38000, Grenoble, France.
authors.forename: Agnes
authors.initials: A
authors.lastname: Messanvi
authors.affiliation: Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405, Orsay, France.
authors.forename: Hezhi
authors.initials: H
authors.lastname: Zhang
authors.affiliation: Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405, Orsay, France.
authors.forename: Francois H
authors.initials: FH
authors.lastname: Julien
authors.affiliation: ITMO University, 197101, Saint Petersburg, Russia.|Ioffe Institute, Polytechnicheskaya 26, 194021, St. Petersburg, Russia.
authors.forename: Andrey
authors.initials: A
authors.lastname: Babichev
authors.affiliation: Univ. Grenoble Alpes, 38000, Grenoble, France.|CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group, 38000, Grenoble, France.
authors.forename: Joel
authors.initials: J
authors.lastname: Eymery
authors.affiliation: Univ. Grenoble Alpes, 38000, Grenoble, France.|CEA, INAC-SP2M, "Nanophysique et semiconducteurs" group, 38000, Grenoble, France.
authors.forename: Christophe
authors.initials: C
authors.lastname: Durand
authors.affiliation: Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11, 91405, Orsay, France.
authors.forename: Maria
authors.initials: M
authors.lastname: Tchernycheva
keywords: Light-emitting diodes; Nanowire; Substrate-free devices Gallium nitride