title: Electric field induced reversible 180° magnetization switching through tuning of interfacial exchange bias along magnetic easy-axis in multiferroic laminates.
abstract: E-field control of interfacial exchange coupling and deterministic switching of magnetization have been demonstrated in two sets of ferromagnetic(FM)/antiferromagnetic(AFM)/ferroelectric(FE) multiferroic heterostructures, including NiFe/NiCoO/glass/PZN-PT (011) and NiFe/FeMn/glass/PZN-PT (011). We designed this experiment to achieve exchange bias tuning along the magnetic easy axis, which is critical for realizing reversible 180° magnetization deterministic switching at zero or small magnetic bias. Strong exchange coupling were established across AFM-FM interfaces, which plays an important role in voltage control of magnetization switching. Through the competition between the E-field induced uniaxial anisotropy in ferromagnetic layer and unidirectional anisotropy in antiferromagnetic layer, the exchange bias was significantly shifted by up to |∆Hex|/Hex = 8% in NiFe/FeMn/glass/PZN-PT (011) and 13% in NiFe/NiCoO/glass/PZN-PT (011). In addition, the square shape of the hysteresis loop, as well as a strong shape tunability of |∆Hex|/Hc = 67.5 ~ 125% in NiFe/FeMn/glass/PZN-PT and 30 ~ 38% in NiFe/NiCoO/glass/PZN-PT were achieved, which lead to a near 180° magnetization switching. Electrical tuning of interfacial exchange coupling in FM/AFM/FE systems paves a new way for realizing magnetoelectric random access memories and other memory technologies.
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China.
authors.forename: Xu
authors.initials: X
authors.lastname: Xue
authors.affiliation: Energy Systems Division, Argonne National Laboratory, Lemont, IL, 60439, USA.
authors.forename: Ziyao
authors.initials: Z
authors.lastname: Zhou
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China.
authors.forename: Bin
authors.initials: B
authors.lastname: Peng
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China.
authors.forename: Mingmin
authors.initials: M
authors.lastname: Zhu
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China.
authors.forename: Yijun
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Ren
authors.affiliation: Beijing Education Examinations Authority, Beijing 100083, China.
authors.forename: Tao
authors.initials: T
authors.lastname: Ren
authors.affiliation: School of Information and Electronics, Beijing Institute of Technology, Beijing 100871, China.
authors.forename: Xi
authors.initials: X
authors.lastname: Yang
authors.affiliation: Electrical and Computer Engineering Department, Northeastern University, Boston, MA 02115, USA.
authors.forename: Tianxiang
authors.initials: T
authors.lastname: Nan
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China.|Electrical and Computer Engineering Department, Northeastern University, Boston, MA 02115, USA.
authors.forename: Nian X
authors.initials: NX
authors.lastname: Sun
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China.|Collaborative Inovation Center of High-End Manufacturing Equipment, Xi'an Jiaotong University, Xi'an, 710049, China.
authors.forename: Ming
authors.initials: M
authors.lastname: Liu