title: High-modulation efficiency operation of GaInAsP/InP membrane distributed feedback laser on Si substrate.
abstract: The direct modulation characteristics of a membrane distributed feedback (DFB) laser on a silicon substrate were investigated. Enhancement of the optical confinement factor in the membrane structure facilitates the fabrication of a strongly index-coupled (κ(I) = 1500 cm(-1)) DFB laser with the cavity length of 80 µm and a threshold current of 270 µA. Small-signal modulation measurements yielded a -3dB bandwidth of 9.5 GHz at 1.03-mA bias current, with modulation efficiency of 9.9 GHz/mA(1/2), which is, to the best of our knowledge, the highest value among those reported for DFB lasers.
authors.forename: Daisuke
authors.initials: D
authors.lastname: Inoue
authors.forename: Takuo
authors.initials: T
authors.lastname: Hiratani
authors.forename: Kai
authors.initials: K
authors.lastname: Fukuda
authors.forename: Takahiro
authors.initials: T
authors.lastname: Tomiyasu
authors.forename: Tomohiro
authors.initials: T
authors.lastname: Amemiya
authors.forename: Nobuhiko
authors.initials: N
authors.lastname: Nishiyama
authors.forename: Shigehisa
authors.initials: S
authors.lastname: Arai