title: Strain induced piezoelectric effect in black phosphorus and MoS2 van der Waals heterostructure.
abstract: The structural, electronic, transport and optical properties of black phosphorus/MoS2 (BP/MoS2) van der Waals (vdw) heterostructure are investigated by using first principles calculations. The band gap of BP/MoS2 bilayer decreases with the applied normal compressive strain and a semiconductor-to-metal transition is observed when the applied strain is more than 0.85 Å. BP/MoS2 bilayer also exhibits modulation of its carrier effective mass and carrier concentration by the applied compressive strain, suggesting that mobility engineering and good piezoelectric effect can be realized in BP/MoS2 heterostructure. Because the type-II band alignment can facilitate the separation of photo-excited electrons and holes, and it can benefit from the great absorption coefficient in ultra-violet region, the BP/MoS2 shows great potential to be a very efficient ultra-violet photodetector.
authors.affiliation: State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Le
authors.initials: L
authors.lastname: Huang
authors.affiliation: State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Li
authors.affiliation: State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Zhongming
authors.initials: Z
authors.lastname: Wei
authors.affiliation: State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Jingbo
authors.initials: J
authors.lastname: Li