title: Effect of Structural Relaxation on the Electronic Structure of Graphene on Hexagonal Boron Nitride.
abstract: We performed calculations of electronic, optical, and transport properties of graphene on hexagonal boron nitride with realistic moiré patterns. The latter are produced by structural relaxation using a fully atomistic model. This relaxation turns out to be crucially important for electronic properties. We describe experimentally observed features such as additional Dirac points and the "Hofstadter butterfly" structure of energy levels in a magnetic field. We find that the electronic structure is sensitive to many-body renormalization of the local energy gap.
authors.affiliation: Institute for Molecules and Materials, Radboud University, Heyendaalseweg 135, 6525AJ Nijmegen, The Netherlands.
authors.forename: G J
authors.initials: GJ
authors.lastname: Slotman
authors.affiliation: Institute for Molecules and Materials, Radboud University, Heyendaalseweg 135, 6525AJ Nijmegen, The Netherlands.
authors.forename: M M
authors.initials: MM
authors.lastname: van Wijk
authors.affiliation: Department of Applied Physics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, NL-9747AG Groningen, The Netherlands.
authors.forename: Pei-Liang
authors.initials: PL
authors.lastname: Zhao
authors.affiliation: Institute for Molecules and Materials, Radboud University, Heyendaalseweg 135, 6525AJ Nijmegen, The Netherlands.
authors.forename: A
authors.initials: A
authors.lastname: Fasolino
authors.affiliation: Institute for Molecules and Materials, Radboud University, Heyendaalseweg 135, 6525AJ Nijmegen, The Netherlands.
authors.forename: M I
authors.initials: MI
authors.lastname: Katsnelson
authors.affiliation: Institute for Molecules and Materials, Radboud University, Heyendaalseweg 135, 6525AJ Nijmegen, The Netherlands.
authors.forename: Shengjun
authors.initials: S
authors.lastname: Yuan