title: Spin Coherence and Dephasing of Localized Electrons in Monolayer MoS₂.
abstract: We report a systematic study of coherent spin precession and spin dephasing in electron-doped monolayer MoS2. Using time-resolved Kerr rotation spectroscopy and applied in-plane magnetic fields, a nanosecond time scale Larmor spin precession signal commensurate with g-factor |g0| ≃ 1.86 is observed in several different MoS2 samples grown by chemical vapor deposition. The dephasing rate of this oscillatory signal increases linearly with magnetic field, suggesting that the coherence arises from a subensemble of localized electron spins having an inhomogeneously broadened distribution of g-factors, g0 + Δg. In contrast to g0, Δg is sample-dependent and ranges from 0.042 to 0.115.
authors.affiliation: National High Magnetic Field Laboratory , Los Alamos, New Mexico 87545, United States.
authors.forename: Luyi
authors.initials: L
authors.lastname: Yang
authors.affiliation: Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States.
authors.forename: Weibing
authors.initials: W
authors.lastname: Chen
authors.affiliation: Materials Science and Technology Division, Naval Research Laboratory , Washington, D.C. 20375, United States.
authors.forename: Kathleen M
authors.initials: KM
authors.lastname: McCreary
authors.affiliation: Materials Science and Technology Division, Naval Research Laboratory , Washington, D.C. 20375, United States.
authors.forename: Berend T
authors.initials: BT
authors.lastname: Jonker
authors.affiliation: Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States.
authors.forename: Jun
authors.initials: J
authors.lastname: Lou
authors.affiliation: National High Magnetic Field Laboratory , Los Alamos, New Mexico 87545, United States.
authors.forename: Scott A
authors.initials: SA
authors.lastname: Crooker
keywords: 2D Semiconductor; dichalcogenide; monolayer MoS2; spin coherence