title: Nondestructive nanofabrication on Si(100) surface by tribochemistry-induced selective etching.
abstract: A tribochemistry-induced selective etching approach is proposed for the first time to produce silicon nanostructures without lattice damage. With a ~1 nm thick SiOx film as etching mask grown on Si(100) surface (Si(100)/SiOx) by wet-oxidation technique, nano-trenches can be produced through the removal of local SiOx mask by a SiO2 tip in humid air and the post-etching of the exposed Si in potassium hydroxide (KOH) solution. The material removal of SiOx mask and Si under low load is dominated by the tribochemical reaction at the interface between SiO2 tip and Si/SiOx sample, where the contact pressure is much lower than the critical pressure for initial yield of Si. High resolution transmission electron microscope (HRTEM) observation indicates that neither the material removal induced by tribochemical reaction nor the wet etching in KOH solution leads to lattice damage of the fabricated nanostructures. The proposed approach points out a new route in nondestructive nanofabrication.
authors.affiliation: Tribology Research Institute, Key Laboratory of Advanced Technologies of Materials (Ministry of Education), Southwest Jiaotong University, Chengdu 610031, Sichuan Province, P. R. China.
authors.forename: Jian
authors.initials: J
authors.lastname: Guo
authors.affiliation: Tribology Research Institute, Key Laboratory of Advanced Technologies of Materials (Ministry of Education), Southwest Jiaotong University, Chengdu 610031, Sichuan Province, P. R. China.
authors.forename: Bingjun
authors.initials: B
authors.lastname: Yu
authors.affiliation: Tribology Research Institute, Key Laboratory of Advanced Technologies of Materials (Ministry of Education), Southwest Jiaotong University, Chengdu 610031, Sichuan Province, P. R. China.
authors.forename: Lei
authors.initials: L
authors.lastname: Chen
authors.affiliation: Tribology Research Institute, Key Laboratory of Advanced Technologies of Materials (Ministry of Education), Southwest Jiaotong University, Chengdu 610031, Sichuan Province, P. R. China.
authors.forename: Linmao
authors.initials: L
authors.lastname: Qian