title: Evidence for two-dimensional Ising superconductivity in gated MoS₂.
abstract: The Zeeman effect, which is usually detrimental to superconductivity, can be strongly protective when an effective Zeeman field from intrinsic spin-orbit coupling locks the spins of Cooper pairs in a direction orthogonal to an external magnetic field. We performed magnetotransport experiments with ionic-gated molybdenum disulfide transistors, in which gating prepared individual superconducting states with different carrier dopings, and measured an in-plane critical field B(c2) far beyond the Pauli paramagnetic limit, consistent with Zeeman-protected superconductivity. The gating-enhanced B(c2) is more than an order of magnitude larger than it is in the bulk superconducting phases, where the effective Zeeman field is weakened by interlayer coupling. Our study provides experimental evidence of an Ising superconductor, in which spins of the pairing electrons are strongly pinned by an effective Zeeman field.
authors.affiliation: Device Physics of Complex Materials, Zernike Institute for Advanced Materials, Nijenborgh 4, 9747 AG, Groningen, Netherlands.
authors.forename: J M
authors.initials: JM
authors.lastname: Lu
authors.affiliation: Device Physics of Complex Materials, Zernike Institute for Advanced Materials, Nijenborgh 4, 9747 AG, Groningen, Netherlands.
authors.forename: O
authors.initials: O
authors.lastname: Zheliuk
authors.affiliation: High Field Magnet Laboratory, European Magnetic Field Laboratory (HFML-EMFL), and Institute of Molecules and Materials, Radboud University, Toernooiveld 7, 6525 ED Nijmegen, Netherlands.
authors.forename: I
authors.initials: I
authors.lastname: Leermakers
authors.affiliation: Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
authors.forename: N F Q
authors.initials: NF
authors.lastname: Yuan
authors.affiliation: High Field Magnet Laboratory, European Magnetic Field Laboratory (HFML-EMFL), and Institute of Molecules and Materials, Radboud University, Toernooiveld 7, 6525 ED Nijmegen, Netherlands.
authors.forename: U
authors.initials: U
authors.lastname: Zeitler
authors.affiliation: Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
authors.forename: K T
authors.initials: KT
authors.lastname: Law
authors.affiliation: Device Physics of Complex Materials, Zernike Institute for Advanced Materials, Nijenborgh 4, 9747 AG, Groningen, Netherlands. j.ye@rug.nl.
authors.forename: J T
authors.initials: JT
authors.lastname: Ye