title: Dislocation scatterings in p-type Si(1-x)Ge(x) under weak electric field.
abstract: We present a theoretical model which describes hole mobility degradation by charged dislocations in p-type Si(1-x)Ge(x). The complete analytical expression of the dislocation mobility is calculated from the momentum relaxation time of hole carriers under weak electric field. The obtained dislocation mobility shows a T(3/2)/λ relation and is proportional to the germanium density x. We also suggest a criterion for negating scatterings by dislocations in terms of the controllable parameters such as acceptor dopant density, dislocation density, temperature, and Ge density x, etc.
authors.affiliation: Compound Device Laboratory, Samsung Advanced Institute of Technology, Gyeonggi-Do 446-712, Korea. Department of Applied Physics, Korea University, Sejong 2511, Sejong 339-700, Korea.
authors.forename: Ji-Hyun
authors.initials: JH
authors.lastname: Hur
authors.forename: Sanghun
authors.initials: S
authors.lastname: Jeon