title: Interface engineering: broadband light and low temperature gas detection abilities using a nano-heterojunction device.
abstract: Herein, we have designed a nano-heterojunction device using interface defects and band bending effects, which can have broadband light detection (from 365-940 nm) and low operating temperature (50 °C) gas detection abilities. The broadband light detection mechanism occurs because of the defects and band bending between the heterojunction interface. We have demonstrated this mechanism using CoSi2/SnO2, CoSi2/TiO2, Ge/SnO2 and Ge/TiO2 nano-heterojunction devices, and all these devices show broadband light detection ability. Furthermore, the nano-heterojunction of the nano-device has a local Joule-heating effect. For gas detection, the results show that the nano-heterojunction device presents a high detection ability. The reset time and sensitivity of the nano-heterojunction device are an order faster and larger than Schottky-contacted devices (previous works), which is due to the local Joule-heating effect between the interface of the nano-heterojunction. Based on the abovementioned idea, we can design diverse nano-devices for widespread use.
authors.affiliation: Department of Physics, Tamkang University, Tamsui, New Taipei City, 25137, Taiwan. phyeh331@mail.tku.edu.tw.
authors.forename: Chien-Min
authors.initials: CM
authors.lastname: Chang
authors.forename: Ching-Han
authors.initials: CH
authors.lastname: Hsu
authors.forename: Yi-Wei
authors.initials: YW
authors.lastname: Liu
authors.forename: Tzu-Chiao
authors.initials: TC
authors.lastname: Chien
authors.forename: Chun-Han
authors.initials: CH
authors.lastname: Sung
authors.forename: Ping-Hung
authors.initials: PH
authors.lastname: Yeh