title: Impact of doping on the carrier dynamics in graphene.
abstract: We present a microscopic study on the impact of doping on the carrier dynamics in graphene, in particular focusing on its influence on the technologically relevant carrier multiplication in realistic, doped graphene samples. Treating the time- and momentum-resolved carrier-light, carrier-carrier, and carrier-phonon interactions on the same microscopic footing, the appearance of Auger-induced carrier multiplication up to a Fermi level of 300 meV is revealed. Furthermore, we show that doping favors the so-called hot carrier multiplication occurring within one band. Our results are directly compared to recent time-resolved ARPES measurements and exhibit an excellent agreement on the temporal evolution of the hot carrier multiplication for n- and p-doped graphene. The gained insights shed light on the ultrafast carrier dynamics in realistic, doped graphene samples.
authors.affiliation: Institut für Theoretische Physik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany.
authors.forename: Faris
authors.initials: F
authors.lastname: Kadi
authors.affiliation: Institut für Theoretische Physik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany.
authors.forename: Torben
authors.initials: T
authors.lastname: Winzer
authors.affiliation: Institut für Theoretische Physik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany.
authors.forename: Andreas
authors.initials: A
authors.lastname: Knorr
authors.affiliation: Chalmers University of Technology, Department of Applied Physics, SE-412 96 Gothenburg, Sweden.
authors.forename: Ermin
authors.initials: E
authors.lastname: Malic