title: Interaction-Driven Metal-Insulator Transition in Strained Graphene.
abstract: The question of whether electron-electron interactions can drive a metal to insulator transition in graphene under realistic experimental conditions is addressed. Using three representative methods to calculate the effective long-range Coulomb interaction between π electrons in graphene and solving for the ground state using quantum Monte Carlo methods, we argue that, without strain, graphene remains metallic and changing the substrate from SiO_{2} to suspended samples hardly makes any difference. In contrast, applying a rather large-but experimentally realistic-uniform and isotropic strain of about 15% seems to be a promising route to making graphene an antiferromagnetic Mott insulator.
authors.affiliation: Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore.|Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore.
authors.forename: Ho-Kin
authors.initials: HK
authors.lastname: Tang
authors.affiliation: Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore.|Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore.
authors.forename: E
authors.initials: E
authors.lastname: Laksono
authors.affiliation: Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore.|Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore.
authors.forename: J N B
authors.initials: JN
authors.lastname: Rodrigues
authors.affiliation: Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore.|School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
authors.forename: P
authors.initials: P
authors.lastname: Sengupta
authors.affiliation: Institut für Theoretische Physik und Astrophysik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.
authors.forename: F F
authors.initials: FF
authors.lastname: Assaad
authors.affiliation: Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore.|Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore.|Yale-NUS College, 16 College Avenue West, Singapore 138527, Singapore.
authors.forename: S
authors.initials: S
authors.lastname: Adam