title: Structural and electrical properties of catalyst-free Si-doped InAs nanowires formed on Si(111).
abstract: We report structural and electrical properties of catalyst-free Si-doped InAs nanowires (NWs) formed on Si(111) substrates. The average diameter of Si-doped InAs NWs was almost similar to that of undoped NWs with a slight increase in height. In the previous works, the shape and size of InAs NWs formed on metallic catalysts or patterned structures were significantly changed by introducing dopants. Even though the external shape and size of the Si-doped NWs in this work were not changed, crystal structures inside the NWs were significantly changed. For the undoped InAs NWs, both zincblende (ZB) and wurzite (WZ) structures were observed in transmission-electron microscope images, where the portion of WZ structure was estimated to be more than 30%. However, only ZB was observed with an increase in stacking fault (SF) for the Si-doped NWs. The undoped and Si-doped InAs NWs were used as channels of four-point electrical measurements with Al/Ni electrodes to investigate electrical properties. The resistivity calculated from the current-voltage curve of a Si-doped InAs NW showed 1.32 × 10(-3) Ωcm, which was dramatically decreased from 10.14 × 10(-3) Ωcm for the undoped InAs NW. A relatively low resistivity of catalyst-free Si-doped InAs NWs was achieved without significant change in structural dimensions.
authors.affiliation: Division of Advanced Materials Engineering &Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, Republic of Korea.
authors.forename: Dong Woo
authors.initials: DW
authors.lastname: Park
authors.affiliation: Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-338, Republic of Korea.
authors.forename: Seong Gi
authors.initials: SG
authors.lastname: Jeon
authors.affiliation: Division of Advanced Materials Engineering &Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, Republic of Korea.
authors.forename: Cheul-Ro
authors.initials: CR
authors.lastname: Lee
authors.affiliation: Materials Genome Center, Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea.
authors.forename: Sang Jun
authors.initials: SJ
authors.lastname: Lee
authors.affiliation: Materials Genome Center, Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea.
authors.forename: Jae Yong
authors.initials: JY
authors.lastname: Song
authors.affiliation: Materials Genome Center, Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea.
authors.forename: Jun Oh
authors.initials: JO
authors.lastname: Kim
authors.affiliation: Materials Genome Center, Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea.
authors.forename: Sam Kyu
authors.initials: SK
authors.lastname: Noh
authors.affiliation: School of Nano Engineering, Inje University, Gimhae 621-749, Republic of Korea.
authors.forename: Jae-Young
authors.initials: JY
authors.lastname: Leem
authors.affiliation: Division of Advanced Materials Engineering &Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, Republic of Korea.
authors.forename: Jin Soo
authors.initials: JS
authors.lastname: Kim