title: Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2).
abstract: The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO(2) has remained elusive. Here we report its measurement enabled by epitaxial VO(2) and atomic layer deposited high-κ dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to ∼5×10(13)  cm(-2) which are trongly localized, as shown by their low, thermally activated mobility (∼1×10(-3)  cm(2)/V s at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto)electronics of VO(2).
authors.affiliation: IBM Research-Almaden, San Jose, California 95120, USA.|ESAT Department, KU Leuven, Leuven BE-3001, Belgium.|IMEC, Kapeldreef 75, Leuven BE-3001, Belgium.
authors.forename: K
authors.initials: K
authors.lastname: Martens
authors.affiliation: IBM Research-Almaden, San Jose, California 95120, USA.
authors.forename: J W
authors.initials: JW
authors.lastname: Jeong
authors.affiliation: IBM Research-Almaden, San Jose, California 95120, USA.
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authors.lastname: Aetukuri
authors.affiliation: IBM Research-Almaden, San Jose, California 95120, USA.
authors.forename: C
authors.initials: C
authors.lastname: Rettner
authors.affiliation: Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors.forename: N
authors.initials: N
authors.lastname: Shukla
authors.affiliation: Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors.forename: E
authors.initials: E
authors.lastname: Freeman
authors.affiliation: Physics Department, University of Antwerp, Groenenborgerlaan 171 BE-2020, Antwerp BE-2020, Belgium.
authors.forename: D N
authors.initials: DN
authors.lastname: Esfahani
authors.affiliation: Physics Department, University of Antwerp, Groenenborgerlaan 171 BE-2020, Antwerp BE-2020, Belgium.
authors.forename: F M
authors.initials: FM
authors.lastname: Peeters
authors.affiliation: IBM Research-Almaden, San Jose, California 95120, USA.
authors.forename: T
authors.initials: T
authors.lastname: Topuria
authors.affiliation: IBM Research-Almaden, San Jose, California 95120, USA.
authors.forename: P M
authors.initials: PM
authors.lastname: Rice
authors.affiliation: Department of Physics and Astronomy, KU Leuven, Leuven BE-3001, Belgium.
authors.forename: A
authors.initials: A
authors.lastname: Volodin
authors.affiliation: IMEC, Kapeldreef 75, Leuven BE-3001, Belgium.
authors.forename: B
authors.initials: B
authors.lastname: Douhard
authors.affiliation: IMEC, Kapeldreef 75, Leuven BE-3001, Belgium.|Department of Physics and Astronomy, KU Leuven, Leuven BE-3001, Belgium.
authors.forename: W
authors.initials: W
authors.lastname: Vandervorst
authors.affiliation: IBM Research-Almaden, San Jose, California 95120, USA.
authors.forename: M G
authors.initials: MG
authors.lastname: Samant
authors.affiliation: Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors.forename: S
authors.initials: S
authors.lastname: Datta
authors.affiliation: IBM Research-Almaden, San Jose, California 95120, USA.
authors.forename: S S P
authors.initials: SS
authors.lastname: Parkin