title: Crown Graphene Nanomeshes: Highly Stable Chelation-Doped Semiconducting Materials.
abstract: Graphene nanomeshes (GNMs) formed by the creation of pore superlattices in graphene are a possible route to graphene-based electronics due to their semiconducting properties, including the emergence of fractional electronvolt band gaps. The utility of GNMs would be markedly increased if a scheme to stably and controllably dope them was developed. In this work, a chemically motivated approach to GNM doping based on selective pore-perimeter passivation and subsequent ion chelation is proposed. It is shown by first-principles calculations that ion chelation leads to stable doping of the passivated GNMs-both n- and p-doping are achieved within a rigid-band picture. Such chelated or "crown" GNM structures are stable, high mobility semiconducting materials possessing intrinsic doping-concentration control; these can serve as building blocks for edge-free graphene nanoelectronics including GNM-based complementary metal oxide semiconductor (CMOS)-type logic switches.
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.|Egypt Nanotechnology Research Center, Cairo University, Giza, Egypt.
authors.forename: Ahmed A
authors.initials: AA
authors.lastname: Maarouf
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors.forename: Razvan A
authors.initials: RA
authors.lastname: Nistor
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors.forename: Ali
authors.initials: A
authors.lastname: Afzali-Ardakani
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors.forename: Marcelo A
authors.initials: MA
authors.lastname: Kuroda
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors.forename: Dennis M
authors.initials: DM
authors.lastname: Newns
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.
authors.forename: Glenn J
authors.initials: GJ
authors.lastname: Martyna