title: Full elastic strain and stress tensor measurements from individual dislocation cells in copper through-Si vias.
abstract: Nondestructive measurements of the full elastic strain and stress tensors from individual dislocation cells distributed along the full extent of a 50 µm-long polycrystalline copper via in Si is reported. Determining all of the components of these tensors from sub-micrometre regions within deformed metals presents considerable challenges. The primary issues are ensuring that different diffraction peaks originate from the same sample volume and that accurate determination is made of the peak positions from plastically deformed samples. For these measurements, three widely separated reflections were examined from selected, individual grains along the via. The lattice spacings and peak positions were measured for multiple dislocation cell interiors within each grain and the cell-interior peaks were sorted out using the measured included angles. A comprehensive uncertainty analysis using a Monte Carlo uncertainty algorithm provided uncertainties for the elastic strain tensor and stress tensor components.
authors.affiliation: Materials Science and Engineering Division, National Institute of Standards and Technology , 100 Bureau Drive, STOP 8553, Gaithersburg, Maryland 20899-8553, USA.
authors.forename: Lyle E
authors.initials: LE
authors.lastname: Levine
authors.affiliation: Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology , Gaithersburg, Maryland 20899-8120, USA.
authors.forename: Chukwudi
authors.initials: C
authors.lastname: Okoro
authors.affiliation: Advanced Photon Source, Argonne National Laboratory , Argonne, Illinois 60439-4800, USA.
authors.forename: Ruqing
authors.initials: R
authors.lastname: Xu
keywords: copper through-Si vias; full elastic strain; microelectronics; stress tensor measurement