title: Silicon oxide nanowire growth mechanisms revealed by real-time electron microscopy.
abstract: Growth of one-dimensional materials is possible through numerous mechanisms that affect the nanowire structure and morphology. Here, we explain why a wide range of morphologies is observed when silicon oxide nanowires are grown on silicon substrates using liquid gallium catalyst droplets. We show that a gallium oxide overlayer is needed for nanowire nucleation at typical growth temperatures, and that it can decompose during growth and, hence, dramatically alter the nanowire morphology. Gallium oxide decomposition is attributed to etching caused by hydrogen that can be supplied by thermal dissociation of H2O (a common impurity). We show that H2O dissociation is catalyzed by silicon substrates at temperatures as low as 320 °C, identify the material supply pathways and processes that rate-limit nanowire growth under dry and wet atmospheres, and present a detailed growth model that explains contradictory results reported in prior studies. We also show that under wet atmospheres the Ga droplets can be mobile and promote nanowire growth as they traverse the silicon substrate.
authors.affiliation: Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno, Czech Republic and CEITEC BUT, Brno University of Technology, Technická 10, 61669 Brno, Czech Republic.
authors.forename: Miroslav
authors.initials: M
authors.lastname: Kolíbal
authors.affiliation: FEI Company, Vlastimila Pecha 1282/12, 627 00 Brno, Czech Republic. kolibal.m@fme.vutbr.cz.
authors.forename: Libor
authors.initials: L
authors.lastname: Novák
authors.affiliation: School of Mathematical and Physical Sciences, University of Technology, Sydney, Ultimo 2007, Australia.
authors.forename: Toby
authors.initials: T
authors.lastname: Shanley
authors.affiliation: School of Mathematical and Physical Sciences, University of Technology, Sydney, Ultimo 2007, Australia.
authors.forename: Milos
authors.initials: M
authors.lastname: Toth
authors.affiliation: Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno, Czech Republic and CEITEC BUT, Brno University of Technology, Technická 10, 61669 Brno, Czech Republic.
authors.forename: Tomáš
authors.initials: T
authors.lastname: Šikola