title: Resistive switching properties of epitaxial BaTiO(3-δ) thin films tuned by after-growth oxygen cooling pressure.
abstract: BaTiO3-δ, i.e. oxygen-deficient barium titanate (BaTiO3), thin films grown on GdScO3(110) substrates with SrRuO3 conductive electrodes by pulsed laser deposition are studied by X-ray diffraction and conductive AFM to characterize their structure and nanoscale electronic properties. Bias- and time-dependent resistive switching measurements reveal a strong dependence on the oxygen vacancy concentration, which can be tuned by after-growth oxygen cooling conditions of thin films. The results indicate that the resistive switching properties of BaTiO3-δ can be enhanced by controlling oxygen deficiency and provide new insight for potential non-volatile resistive random-access memory (RRAM) applications.
authors.affiliation: School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia. jan.seidel@unsw.edu.au.
authors.forename: Yooun
authors.initials: Y
authors.lastname: Heo
authors.forename: Daisuke
authors.initials: D
authors.lastname: Kan
authors.forename: Yuichi
authors.initials: Y
authors.lastname: Shimakawa
authors.forename: Jan
authors.initials: J
authors.lastname: Seidel