title: Large Enhancement of Carrier Transport in Solution-Processed Field-Effect Transistors by Fluorinated Dielectric Engineering.
abstract: The universal role of high-k fluorinated dielectrics in assisting the carrier transport in transistors for a broad range of printable semiconductors is explored. These results present general rules for how to design dielectric materials and achieve devices with a high carrier concentration, low disorder, reliable operation, and robust properties.
authors.affiliation: Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu Seoul, 100-715, Republic of Korea.
authors.forename: Dongyoon
authors.initials: D
authors.lastname: Khim
authors.affiliation: Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu Seoul, 100-715, Republic of Korea.
authors.forename: Yong
authors.initials: Y
authors.lastname: Xu
authors.affiliation: Department of Graphic Arts Information Engineering, College of Engineering Pukyung National University, 365 Sinseon-ro, Nam-gu Busan, 48547, Republic of Korea.
authors.forename: Kang-Jun
authors.initials: KJ
authors.lastname: Baeg
authors.affiliation: Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu Gwangju, 61005, Republic of Korea.
authors.forename: Minji
authors.initials: M
authors.lastname: Kang
authors.affiliation: Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu Seoul, 100-715, Republic of Korea.
authors.forename: Won-Tae
authors.initials: WT
authors.lastname: Park
authors.affiliation: Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu Gwangju, 61005, Republic of Korea.
authors.forename: Seung-Hoon
authors.initials: SH
authors.lastname: Lee
authors.affiliation: Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu Gwangju, 61005, Republic of Korea.
authors.forename: In-Bok
authors.initials: IB
authors.lastname: Kim
authors.affiliation: Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu Gwangju, 61005, Republic of Korea.
authors.forename: Juhwan
authors.initials: J
authors.lastname: Kim
authors.affiliation: Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu Gwangju, 61005, Republic of Korea.
authors.forename: Dong-Yu
authors.initials: DY
authors.lastname: Kim
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies Guangdong Province Key Laboratory of Display Material and Technology School of Microelectronics, Shunde International Joint Research Institute (SYSU-CMU JRI), Sun Yat-sen University, Guangzhou, 510275, P. R. China.
authors.forename: Chuan
authors.initials: C
authors.lastname: Liu
authors.affiliation: Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu Seoul, 100-715, Republic of Korea.
authors.forename: Yong-Young
authors.initials: YY
authors.lastname: Noh
keywords: ambipolar transport; conjugated polymers; fluorinated high-k polymer dielectrics; organic field-effect transistors