title: Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire.
abstract: We compare and discuss the two most commonly used electrical characterization techniques for nanowires (NWs). In a novel single-NW device, we combine Hall effect and back-gated and top-gated field effect measurements and quantify the carrier concentrations in a series of sulfur-doped InP NWs. The carrier concentrations from Hall effect and field effect measurements are found to correlate well when using the analysis methods described in this work. This shows that NWs can be accurately characterized with available electrical methods, an important result toward better understanding of semiconductor NW doping.
authors.affiliation: Division of Solid State Physics, Lund University , P.O. Box 118, SE-22100 Lund, Sweden.
authors.forename: Olof
authors.initials: O
authors.lastname: Hultin
authors.affiliation: Division of Solid State Physics, Lund University , P.O. Box 118, SE-22100 Lund, Sweden.
authors.forename: Gaute
authors.initials: G
authors.lastname: Otnes
authors.affiliation: Division of Solid State Physics, Lund University , P.O. Box 118, SE-22100 Lund, Sweden.
authors.forename: Magnus T
authors.initials: MT
authors.lastname: Borgström
authors.affiliation: Sol Voltaics AB , Scheelevägen 22, SE-22363 Lund, Sweden.
authors.forename: Mikael
authors.initials: M
authors.lastname: Björk
authors.affiliation: Division of Solid State Physics, Lund University , P.O. Box 118, SE-22100 Lund, Sweden.
authors.forename: Lars
authors.initials: L
authors.lastname: Samuelson
authors.affiliation: Division of Solid State Physics, Lund University , P.O. Box 118, SE-22100 Lund, Sweden.
authors.forename: Kristian
authors.initials: K
authors.lastname: Storm
keywords: Hall effect; Nanowire; doping; electrical characterization; field effect