title: Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET.
abstract: Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred mega-Hertz.
authors.affiliation: Univ. Grenoble Alpes, INAC-SPSMS , F-38000 Grenoble, France.|CEA, INAC-SPSMS , F-38000 Grenoble, France.
authors.forename: B
authors.initials: B
authors.lastname: Voisin
authors.affiliation: Univ. Grenoble Alpes, INAC-SPSMS , F-38000 Grenoble, France.|CEA, INAC-SPSMS , F-38000 Grenoble, France.
authors.forename: R
authors.initials: R
authors.lastname: Maurand
authors.affiliation: CEA, LETI , MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France.
authors.forename: S
authors.initials: S
authors.lastname: Barraud
authors.affiliation: CEA, LETI , MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France.
authors.forename: M
authors.initials: M
authors.lastname: Vinet
authors.affiliation: Univ. Grenoble Alpes, INAC-SPSMS , F-38000 Grenoble, France.|CEA, INAC-SPSMS , F-38000 Grenoble, France.
authors.forename: X
authors.initials: X
authors.lastname: Jehl
authors.affiliation: Univ. Grenoble Alpes, INAC-SPSMS , F-38000 Grenoble, France.|CEA, INAC-SPSMS , F-38000 Grenoble, France.
authors.forename: M
authors.initials: M
authors.lastname: Sanquer
authors.affiliation: Univ. Grenoble Alpes, INAC-SPSMS , F-38000 Grenoble, France.|CEA, INAC-SPSMS , F-38000 Grenoble, France.
authors.forename: J
authors.initials: J
authors.lastname: Renard
authors.affiliation: Univ. Grenoble Alpes, INAC-SPSMS , F-38000 Grenoble, France.|CEA, INAC-SPSMS , F-38000 Grenoble, France.
authors.forename: S
authors.initials: S
authors.lastname: De Franceschi
keywords: Landé g-factor; MOSFET; Quantum dot; hole transport; silicon; spin qubits