title: Electromechanical coupling and design considerations in single-layer MoS2 suspended-channel transistors and resonators.
abstract: We report on the analysis of electromechanical coupling effects in suspended doubly-clamped single-layer MoS2 structures, and the designs of suspended-channel field-effect transistors (FETs) and vibrating-channel nanoelectromechanical resonators. In DC gating scenario, signal transduction processes including electrostatic actuation, deflection, straining on bandgap, mobility, carrier density and their intricate cross-interactions, have been analyzed considering strain-enhanced mobility (by up to 4 times), to determine the transfer characteristics. In AC gating scenario and resonant operations (using 100 MHz and 1 GHz devices as relevant targets), we demonstrate that the vibrating-channel MoS2 devices can offer enhanced signals (than the zero-bandgap graphene counterparts), thanks to the resonant straining effects on electron transport of the semiconducting channel. We also show dependence of signal intensity and signal-to-background ratio (SBR) on device geometries and scaling effects, with SBR enhancement by a factor of ∼8 for resonance signal, which provide guidelines toward designing future devices with desirable parameters.
authors.affiliation: Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106, USA. philip.feng@case.edu.
authors.forename: Rui
authors.initials: R
authors.lastname: Yang
authors.forename: Arnob
authors.initials: A
authors.lastname: Islam
authors.forename: Philip X-L
authors.initials: PX
authors.lastname: Feng