title: Size confinement of Si nanocrystals in multinanolayer structures.
abstract: Si nanocrystals (NCs) are often prepared by thermal annealing of multiple stacks of alternating sub-stoichiometric SiOx and SiO2 nanolayers. It is frequently claimed that in these structures, the NC diameter can be predefined by the thickness of the SiOx layer, while the NC concentration is independently controlled by the stoichiometry parameter x. However, several detailed structural investigations report that the NC size confinement to within the thickness of the SiOx layer is not strictly obeyed. In this study we address these contradicting findings: based on cross-correlation between structural and optical characterization of NCs grown in a series of purposefully prepared samples of different stoichiometry and layer thickness, we develop a comprehensive understanding of NC formation by Si precipitation in multinanolayer structures. We argue that the narrow NC size distribution generally observed in these materials appears due to reduction of the Si diffusion range, imposed by the SiO2 spacer layer. Therefore, both the SiOx layer thickness and composition as well as the actual thickness of the SiO2 spacer play an essential role in the NC formation.
authors.affiliation: Van der Waals-Zeeman Institute, University of Amsterdam, 1098 XH Amsterdam, The Netherlands.
authors.forename: Rens
authors.initials: R
authors.lastname: Limpens
authors.affiliation: Van der Waals-Zeeman Institute, University of Amsterdam, 1098 XH Amsterdam, The Netherlands.
authors.forename: Arnon
authors.initials: A
authors.lastname: Lesage
authors.affiliation: Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan.
authors.forename: Minoru
authors.initials: M
authors.lastname: Fujii
authors.affiliation: Van der Waals-Zeeman Institute, University of Amsterdam, 1098 XH Amsterdam, The Netherlands.
authors.forename: Tom
authors.initials: T
authors.lastname: Gregorkiewicz