title: Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering.
abstract: Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)2Se3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi2Se3.
authors.forename: Nikesh
authors.initials: N
authors.lastname: Koirala
authors.forename: Matthew
authors.initials: M
authors.lastname: Brahlek
authors.forename: Maryam
authors.initials: M
authors.lastname: Salehi
authors.affiliation: Department of Physics and Astronomy, The Johns Hopkins University , Baltimore, Maryland 21218, United States.
authors.forename: Liang
authors.initials: L
authors.lastname: Wu
authors.forename: Jixia
authors.initials: J
authors.lastname: Dai
authors.affiliation: Department of Physics, University of Colorado , Boulder, Colorado 80309, United States.
authors.forename: Justin
authors.initials: J
authors.lastname: Waugh
authors.affiliation: Department of Physics, University of Colorado , Boulder, Colorado 80309, United States.
authors.forename: Thomas
authors.initials: T
authors.lastname: Nummy
authors.affiliation: Condensed Matter Physics and Materials Science, Brookhaven National Lab , Upton, New York 11973, United States.
authors.forename: Myung-Geun
authors.initials: MG
authors.lastname: Han
authors.forename: Jisoo
authors.initials: J
authors.lastname: Moon
authors.affiliation: Condensed Matter Physics and Materials Science, Brookhaven National Lab , Upton, New York 11973, United States.
authors.forename: Yimei
authors.initials: Y
authors.lastname: Zhu
authors.affiliation: Department of Physics, University of Colorado , Boulder, Colorado 80309, United States.
authors.forename: Daniel
authors.initials: D
authors.lastname: Dessau
authors.forename: Weida
authors.initials: W
authors.lastname: Wu
authors.affiliation: Department of Physics and Astronomy, The Johns Hopkins University , Baltimore, Maryland 21218, United States.
authors.forename: N Peter
authors.initials: NP
authors.lastname: Armitage
authors.forename: Seongshik
authors.initials: S
authors.lastname: Oh
keywords: Topological insulator; heterostructure; molecular beam epitaxy; quantum Hall effect; thin films