title: Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening.
abstract: By combining a high-κ dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened, leading to an unprecedented room-temperature mobility of ≈150 cm(2) V(-1) s(-1) and room-temperature phonon-limited transport in a monolayer MoS2 transistor for the first time.
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Zhihao
authors.initials: Z
authors.lastname: Yu
authors.affiliation: Institute of High Performance Computing, 1 Fusionopolis Way, Singapore, 138632, Singapore.
authors.forename: Zhun-Yong
authors.initials: ZY
authors.lastname: Ong
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Yiming
authors.initials: Y
authors.lastname: Pan
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Cui
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Run
authors.initials: R
authors.lastname: Xin
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Yi
authors.initials: Y
authors.lastname: Shi
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Baigeng
authors.initials: B
authors.lastname: Wang
authors.affiliation: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute, Nanjing, 210016, P. R. China.
authors.forename: Yun
authors.initials: Y
authors.lastname: Wu
authors.affiliation: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute, Nanjing, 210016, P. R. China.
authors.forename: Tangsheng
authors.initials: T
authors.lastname: Chen
authors.affiliation: Institute of High Performance Computing, 1 Fusionopolis Way, Singapore, 138632, Singapore.
authors.forename: Yong-Wei
authors.initials: YW
authors.lastname: Zhang
authors.affiliation: Institute of High Performance Computing, 1 Fusionopolis Way, Singapore, 138632, Singapore.
authors.forename: Gang
authors.initials: G
authors.lastname: Zhang
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Xinran
authors.initials: X
authors.lastname: Wang
keywords: interface; mobility; molybdenum disulfide (MoS2); phonon transport