title: Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)2Te3.
abstract: Magnetically doped topological insulators, possessing an energy gap created at the Dirac point through time-reversal-symmetry breaking, are predicted to exhibit exotic phenomena including the quantized anomalous Hall effect and a dissipationless transport, which facilitate the development of low-power-consumption devices using electron spins. Although several candidates of magnetically doped topological insulators were demonstrated to show long-range magnetic order, the realization of the quantized anomalous Hall effect is so far restricted to the Cr-doped (Sb,Bi)2Te3 system at extremely low temperature; however, the microscopic origin of its ferromagnetism is poorly understood. Here we present an element-resolved study for Cr-doped (Sb,Bi)2Te3 using X-ray magnetic circular dichroism to unambiguously show that the long-range magnetic order is mediated by the p-hole carriers of the host lattice, and the interaction between the Sb(Te) p and Cr d states is crucial. Our results are important for material engineering in realizing the quantized anomalous Hall effect at higher temperatures.
authors.affiliation: State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China.|CAS-Shanghai Science Research Center, 239 Zhang Heng Road, Shanghai 201203, China.
authors.forename: Mao
authors.initials: M
authors.lastname: Ye
authors.affiliation: State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China.|CAS-Shanghai Science Research Center, 239 Zhang Heng Road, Shanghai 201203, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Li
authors.affiliation: Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan.
authors.forename: Siyuan
authors.initials: S
authors.lastname: Zhu
authors.affiliation: Condensed Matter Science Division, Quantum Beam Science Center, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan.
authors.forename: Yukiharu
authors.initials: Y
authors.lastname: Takeda
authors.affiliation: Condensed Matter Science Division, Quantum Beam Science Center, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan.
authors.forename: Yuji
authors.initials: Y
authors.lastname: Saitoh
authors.affiliation: School of physical science and technology, ShanghaiTech University, 319 Yueyang Road, Shanghai 200031, China.
authors.forename: Jiajia
authors.initials: J
authors.lastname: Wang
authors.affiliation: Department of Physics, State Key Laboratory of Surface Physics, and Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China.
authors.forename: Hong
authors.initials: H
authors.lastname: Pan
authors.affiliation: Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan.
authors.forename: Munisa
authors.initials: M
authors.lastname: Nurmamat
authors.affiliation: Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan.
authors.forename: Kazuki
authors.initials: K
authors.lastname: Sumida
authors.affiliation: Department of Physics, State Key Laboratory of Surface Physics, and Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China.
authors.forename: Fuhao
authors.initials: F
authors.lastname: Ji
authors.affiliation: Department of Physics, State Key Laboratory of Surface Physics, and Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China.
authors.forename: Zhen
authors.initials: Z
authors.lastname: Liu
authors.affiliation: State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China.
authors.forename: Haifeng
authors.initials: H
authors.lastname: Yang
authors.affiliation: State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China.
authors.forename: Zhengtai
authors.initials: Z
authors.lastname: Liu
authors.affiliation: State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China.|CAS-Shanghai Science Research Center, 239 Zhang Heng Road, Shanghai 201203, China.
authors.forename: Dawei
authors.initials: D
authors.lastname: Shen
authors.affiliation: Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan.
authors.forename: Akio
authors.initials: A
authors.lastname: Kimura
authors.affiliation: State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China.|CAS-Shanghai Science Research Center, 239 Zhang Heng Road, Shanghai 201203, China.|School of physical science and technology, ShanghaiTech University, 319 Yueyang Road, Shanghai 200031, China.
authors.forename: Shan
authors.initials: S
authors.lastname: Qiao
authors.affiliation: State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China.|CAS-Shanghai Science Research Center, 239 Zhang Heng Road, Shanghai 201203, China.|School of physical science and technology, ShanghaiTech University, 319 Yueyang Road, Shanghai 200031, China.
authors.forename: Xiaoming
authors.initials: X
authors.lastname: Xie