title: Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors.
abstract: Controlled device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by modest doping and charge compensation. Through fleeting chemical vapor treatments of aligned poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine] (PCDTPT) thin films as the charge transport layer in the FET channel, the FET properties are tailored by controlling doping concentration of the PCDTPT adjacent to metal electrodes.
authors.affiliation: Center for Polymers and Organic Solids, University of California Santa Barbara, Santa Barbara, CA, 93106, USA.
authors.forename: Byoung Hoon
authors.initials: BH
authors.lastname: Lee
authors.affiliation: Center for Polymers and Organic Solids, University of California Santa Barbara, Santa Barbara, CA, 93106, USA.
authors.forename: Guillermo C
authors.initials: GC
authors.lastname: Bazan
authors.affiliation: Center for Polymers and Organic Solids, University of California Santa Barbara, Santa Barbara, CA, 93106, USA.
authors.forename: Alan J
authors.initials: AJ
authors.lastname: Heeger
keywords: contact resistance; linear mobility; organic electronics; polymer field-effect transistors; threshold voltage