title: Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage.
abstract: Here, a single-device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch gate for field effect transistor (FET) on a flexible substrate. A high performance flexible RRAM with a three-layered structure is fabricated by utilizing solution-processed MoS2 nanosheets sandwiched between poly(methyl methacrylate) polymer layers. Gate coupling with the pentacene-based transistor can be controlled by the RRAM memory state to produce a nonprogrammed state (inactive) and a programmed state (active) with a well-defined memory window. Compared to the reference flash memory device based on the MoS2 floating gate, the hybrid device presents robust access speed and retention ability. Furthermore, the hybrid RRAM-gated FET is used to build an integrated logic circuit and a wide logic window in inverter logic is achieved. The controllable, well-defined memory window, long retention time, and fast access speed of this novel hybrid device may open up new possibilities of realizing fully functional nonvolatile memory for high-performance flexible electronics.
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China.
authors.forename: Su-Ting
authors.initials: ST
authors.lastname: Han
authors.affiliation: Institute for Advanced Study, Shenzhen University, Shenzhen, Guangdong, 508060, P. R. China.|State Key Laboratory of Millimeter Waves, City University of Hong Kong, Hong Kong SAR, China.
authors.forename: Ye
authors.initials: Y
authors.lastname: Zhou
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore.
authors.forename: Bo
authors.initials: B
authors.lastname: Chen
authors.affiliation: School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China.
authors.forename: Chundong
authors.initials: C
authors.lastname: Wang
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China.
authors.forename: Li
authors.initials: L
authors.lastname: Zhou
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Yan
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China.
authors.forename: Jiaqing
authors.initials: J
authors.lastname: Zhuang
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China.
authors.forename: Qijun
authors.initials: Q
authors.lastname: Sun
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore.
authors.forename: Hua
authors.initials: H
authors.lastname: Zhang
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China.|State Key Laboratory of Millimeter Waves, City University of Hong Kong, Hong Kong SAR, China.
authors.forename: V A L
authors.initials: VA
authors.lastname: Roy
keywords: flash memories; flexible electronics; molybdenum disulphide; nonvolatile data storage; resistive switching random access memory