title: Trilayer Tunnel Selectors for Memristor Memory Cells.
abstract: An integrated memory cell with a mem-ristor and a trilayer crested barrier selector, showing repeatable nonlinear current-voltage switching loops is presented. The fully atomic-layer-deposited TaN1+x /Ta2 O5 /TaN1+x crested barrier selector yields a large nonlinearity (>10(4) ), high endurance (>10(8) ), low variability, and low temperature dependence.
authors.affiliation: Hewlett Packard Laboratories, Palo Alto, CA, 94304, USA.
authors.forename: Byung Joon
authors.initials: BJ
authors.lastname: Choi
authors.affiliation: Hewlett Packard Laboratories, Palo Alto, CA, 94304, USA.
authors.forename: Jiaming
authors.initials: J
authors.lastname: Zhang
authors.affiliation: Hewlett Packard Laboratories, Palo Alto, CA, 94304, USA.
authors.forename: Kate
authors.initials: K
authors.lastname: Norris
authors.affiliation: Hewlett Packard Laboratories, Palo Alto, CA, 94304, USA.
authors.forename: Gary
authors.initials: G
authors.lastname: Gibson
authors.affiliation: Hewlett Packard Laboratories, Palo Alto, CA, 94304, USA.
authors.forename: Kyung Min
authors.initials: KM
authors.lastname: Kim
authors.affiliation: Hewlett Packard Laboratories, Palo Alto, CA, 94304, USA.
authors.forename: Warren
authors.initials: W
authors.lastname: Jackson
authors.affiliation: Hewlett Packard Laboratories, Palo Alto, CA, 94304, USA.
authors.forename: Min-Xian Max
authors.initials: MX
authors.lastname: Zhang
authors.affiliation: Hewlett Packard Laboratories, Palo Alto, CA, 94304, USA.
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Li
authors.affiliation: Hewlett Packard Laboratories, Palo Alto, CA, 94304, USA.
authors.forename: J Joshua
authors.initials: JJ
authors.lastname: Yang
authors.affiliation: Hewlett Packard Laboratories, Palo Alto, CA, 94304, USA.
authors.forename: R Stanley
authors.initials: RS
authors.lastname: Williams
keywords: RRAM; crested barriers; memory cells; memristor; tunneling