title: Electrical contacts to two-dimensional semiconductors.
abstract: The performance of electronic and optoelectronic devices based on two-dimensional layered crystals, including graphene, semiconductors of the transition metal dichalcogenide family such as molybdenum disulphide (MoS2) and tungsten diselenide (WSe2), as well as other emerging two-dimensional semiconductors such as atomically thin black phosphorus, is significantly affected by the electrical contacts that connect these materials with external circuitry. Here, we present a comprehensive treatment of the physics of such interfaces at the contact region and discuss recent progress towards realizing optimal contacts for two-dimensional materials. We also discuss the requirements that must be fulfilled to realize efficient spin injection in transition metal dichalcogenides.
authors.affiliation: Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
authors.forename: Adrien
authors.initials: A
authors.lastname: Allain
authors.affiliation: Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA.
authors.forename: Jiahao
authors.initials: J
authors.lastname: Kang
authors.affiliation: Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA.
authors.forename: Kaustav
authors.initials: K
authors.lastname: Banerjee
authors.affiliation: Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
authors.forename: Andras
authors.initials: A
authors.lastname: Kis