title: Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper.
abstract: Graphene research has prospered impressively in the past few years, and promising applications such as high-frequency transistors, magnetic field sensors, and flexible optoelectronics are just waiting for a scalable and cost-efficient fabrication technology to produce high-mobility graphene. Although significant progress has been made in chemical vapor deposition (CVD) and epitaxial growth of graphene, the carrier mobility obtained with these techniques is still significantly lower than what is achieved using exfoliated graphene. We show that the quality of CVD-grown graphene depends critically on the used transfer process, and we report on an advanced transfer technique that allows both reusing the copper substrate of the CVD growth and making devices with mobilities as high as 350,000 cm(2) V(-1) s(-1), thus rivaling exfoliated graphene.
authors.affiliation: JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany.
authors.forename: Luca
authors.initials: L
authors.lastname: Banszerus
authors.affiliation: JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany.
authors.forename: Michael
authors.initials: M
authors.lastname: Schmitz
authors.affiliation: JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany. ; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany.
authors.forename: Stephan
authors.initials: S
authors.lastname: Engels
authors.affiliation: JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany. ; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany.
authors.forename: Jan
authors.initials: J
authors.lastname: Dauber
authors.affiliation: JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany.
authors.forename: Martin
authors.initials: M
authors.lastname: Oellers
authors.affiliation: JARA-Institute for Quantum Information, RWTH Aachen University, 52056 Aachen, Germany.
authors.forename: Federica
authors.initials: F
authors.lastname: Haupt
authors.affiliation: National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
authors.forename: Kenji
authors.initials: K
authors.lastname: Watanabe
authors.affiliation: National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Taniguchi
authors.affiliation: JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany.
authors.forename: Bernd
authors.initials: B
authors.lastname: Beschoten
authors.affiliation: JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany. ; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany.
authors.forename: Christoph
authors.initials: C
authors.lastname: Stampfer
keywords: Chemical vapor deposition (CVD); High carrier mobility; Quantum Transport; graphene; nanoelectronics