title: Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory Applications.
abstract: In this work, high-performance top-gated nanowire molecular flash memory has been fabricated with redox-active molecules. Different molecules with one and two redox centers have been tested. The flash memory has clean solid/molecule and dielectric interfaces, due to the pristine molecular self-assembly and the nanowire device self-alignment fabrication process. The memory cells exhibit discrete charged states at small gate voltages. Such multi-bit memory in one cell is favorable for high-density storage. These memory devices exhibit fast speed, low power, long memory retention, and exceptionally good endurance (>10(9) cycles). The excellent characteristics are derived from the intrinsic charge-storage properties of the protected redox-active molecules. Such multi-bit molecular flash memory is very attractive for high-endurance and high-density on-chip memory applications in future portable electronics.
authors.affiliation: Department of Electrical and Computer Engineering, George Mason University , Fairfax, Virginia 22030, United States.|Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States.
authors.forename: Hao
authors.initials: H
authors.lastname: Zhu
authors.affiliation: Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States.
authors.forename: Sujitra J
authors.initials: SJ
authors.lastname: Pookpanratana
authors.affiliation: Materials Science and Engineering Division, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States.
authors.forename: John E
authors.initials: JE
authors.lastname: Bonevich
authors.affiliation: Department of Chemistry, Purdue University , West Lafayette, Indiana 47907, United States.
authors.forename: Sean N
authors.initials: SN
authors.lastname: Natoli
authors.affiliation: Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States.
authors.forename: Christina A
authors.initials: CA
authors.lastname: Hacker
authors.affiliation: Department of Chemistry, Purdue University , West Lafayette, Indiana 47907, United States.
authors.forename: Tong
authors.initials: T
authors.lastname: Ren
authors.affiliation: Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States.
authors.forename: John S
authors.initials: JS
authors.lastname: Suehle
authors.affiliation: Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States.
authors.forename: Curt A
authors.initials: CA
authors.lastname: Richter
authors.affiliation: Department of Electrical and Computer Engineering, George Mason University , Fairfax, Virginia 22030, United States.
authors.forename: Qiliang
authors.initials: Q
authors.lastname: Li
keywords: Si nanowire FETs; endurance; flash memory; multi-bit memory; redox-active molecules