title: Silicon nanocrystal growth under irradiation of electron beam.
abstract: In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm. In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.
authors.affiliation: Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025 (China).
authors.forename: Wei-Qi
authors.initials: WQ
authors.lastname: Huang
authors.affiliation: State Key Laboratory of Environmental Geochemistry Institute of Geochemistry, Chinese Academy of Science Institute of Geochemistry, Guiyang 550003 (China).
authors.forename: Shi-Rong
authors.initials: SR
authors.lastname: Liu
authors.affiliation: Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433 (China).
authors.forename: Zhong-Mei
authors.initials: ZM
authors.lastname: Huang
authors.affiliation: Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025 (China).
authors.forename: Tai-Ge
authors.initials: TG
authors.lastname: Dong
authors.affiliation: Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025 (China).
authors.forename: Gang
authors.initials: G
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Environmental Geochemistry Institute of Geochemistry, Chinese Academy of Science Institute of Geochemistry, Guiyang 550003 (China).
authors.forename: Cao-Jian
authors.initials: CJ
authors.lastname: Qin