title: Towards a new class of heavy ion doped magnetic semiconductors for room temperature applications.
abstract: The article presents, using Bi doped ZnO, an example of a heavy ion doped oxide semiconductor, highlighting a novel p-symmetry interaction of the electronic states to stabilize ferromagnetism. The study includes both ab initio theory and experiments, which yield clear evidence for above room temperature ferromagnetism. ZnBi(x)O(1-x) thin films are grown using the pulsed laser deposition technique. The room temperature ferromagnetism finds its origin in the holes introduced by the Bi doping and the p-p coupling between Bi and the host atoms. A sizeable magnetic moment is measured by means of x-ray magnetic circular dichroism at the O K-edge, probing directly the spin polarization of the O(2p) states. This result is in agreement with the theoretical predictions and inductive magnetometry measurements. Ab initio calculations of the electronic and magnetic structure of ZnBi(x)O(1-x) at various doping levels allow to trace the origin of the ferromagnetic character of this material. It appears, that the spin-orbit energy of the heavy ion Bi stabilizes the ferromagnetic phase. Thus, ZnBi(x)O(1-x) doped with a heavy non-ferromagnetic element, such as Bi, is a credible example of a candidate material for a new class of compounds for spintronics applications, based on the spin polarization of the p states.
authors.affiliation: Quantum Functional Semiconductor Research Center (QSRC), Dongguk University, 26 Phildong 3ga, Chung gu, Seoul, 100-715, Republic of Korea.
authors.forename: Juwon
authors.initials: J
authors.lastname: Lee
authors.affiliation: Quantum Functional Semiconductor Research Center (QSRC), Dongguk University, 26 Phildong 3ga, Chung gu, Seoul, 100-715, Republic of Korea.|Nano Information Technology Academy, Dongguk University, 26 Phildong 3ga, Chung gu, Seoul 100-715, Republic of Korea.
authors.forename: Nagarajan Ganapathi
authors.initials: NG
authors.lastname: Subramaniam
authors.affiliation: Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, PL-02-668, Poland.
authors.forename: Iwona Agnieszka
authors.initials: IA
authors.lastname: Kowalik
authors.affiliation: Department of Physics and Astronomy, Uppsala University, Box 520, Uppsala, SE-751 21, Sweden.
authors.forename: Jawad
authors.initials: J
authors.lastname: Nisar
authors.affiliation: Quantum Functional Semiconductor Research Center (QSRC), Dongguk University, 26 Phildong 3ga, Chung gu, Seoul, 100-715, Republic of Korea.
authors.forename: Jaechul
authors.initials: J
authors.lastname: Lee
authors.affiliation: Quantum Functional Semiconductor Research Center (QSRC), Dongguk University, 26 Phildong 3ga, Chung gu, Seoul, 100-715, Republic of Korea.
authors.forename: Younghae
authors.initials: Y
authors.lastname: Kwon
authors.affiliation: Quantum Functional Semiconductor Research Center (QSRC), Dongguk University, 26 Phildong 3ga, Chung gu, Seoul, 100-715, Republic of Korea.
authors.forename: Jaechoon
authors.initials: J
authors.lastname: Lee
authors.affiliation: Quantum Functional Semiconductor Research Center (QSRC), Dongguk University, 26 Phildong 3ga, Chung gu, Seoul, 100-715, Republic of Korea.|Nano Information Technology Academy, Dongguk University, 26 Phildong 3ga, Chung gu, Seoul 100-715, Republic of Korea.|Clean Energy and Nano Convergence Center (CENCON), Hindustan University, N0.1 Rajiv Gandhi Salai (OMR), Padur (via Kelambakkam), Chennai-603103, India.
authors.forename: Taewon
authors.initials: T
authors.lastname: Kang
authors.affiliation: Department of Physics and Astronomy, Uppsala University, Box 520, Uppsala, SE-751 21, Sweden.
authors.forename: Xiangyang
authors.initials: X
authors.lastname: Peng
authors.affiliation: Department of Physics and Astronomy, Uppsala University, Box 520, Uppsala, SE-751 21, Sweden.
authors.forename: Dimitri
authors.initials: D
authors.lastname: Arvanitis
authors.affiliation: Department of Physics and Astronomy, Uppsala University, Box 520, Uppsala, SE-751 21, Sweden.|Applied Materials Physics, Department of Materials and Engineering, Royal Institute of Technology (KTH), Stockholm, SE-100 44, Sweden.
authors.forename: Rajeev
authors.initials: R
authors.lastname: Ahuja