title: Flexion bonding transfer of multilayered graphene as a top electrode in transparent organic light-emitting diodes.
abstract: Graphene has attracted considerable attention as a next-generation transparent conducting electrode, because of its high electrical conductivity and optical transparency. Various optoelectronic devices comprising graphene as a bottom electrode, such as organic light-emitting diodes (OLEDs), organic photovoltaics, quantum-dot LEDs, and light-emitting electrochemical cells, have recently been reported. However, performance of optoelectronic devices using graphene as top electrodes is limited, because the lamination process through which graphene is positioned as the top layer of these conventional OLEDs is a lack of control in the surface roughness, the gapless contact, and the flexion bonding between graphene and organic layer of the device. Here, a multilayered graphene (MLG) as a top electrode is successfully implanted, via dry bonding, onto the top organic layer of transparent OLED (TOLED) with flexion patterns. The performance of the TOLED with MLG electrode is comparable to that of a conventional TOLED with a semi-transparent thin-Ag top electrode, because the MLG electrode makes a contact with the TOLED with no residue. In addition, we successfully fabricate a large-size transparent segment panel using the developed MLG electrode. Therefore, we believe that the flexion bonding technology presented in this work is applicable to various optoelectronic devices.
authors.affiliation: Soft I/O Interface Research Section, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea.
authors.forename: Jong
authors.initials: J
authors.lastname: Tae Lim
authors.affiliation: Soft I/O Interface Research Section, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea.
authors.forename: Hyunkoo
authors.initials: H
authors.lastname: Lee
authors.affiliation: Soft I/O Interface Research Section, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea.
authors.forename: Hyunsu
authors.initials: H
authors.lastname: Cho
authors.affiliation: Soft I/O Interface Research Section, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea.
authors.forename: Byoung-Hwa
authors.initials: BH
authors.lastname: Kwon
authors.affiliation: Soft I/O Interface Research Section, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea.
authors.forename: Nam
authors.initials: N
authors.lastname: Sung Cho
authors.affiliation: IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea.
authors.forename: Bong
authors.initials: B
authors.lastname: Kuk Lee
authors.affiliation: Smart I/O Control Research Section, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea.
authors.forename: Jonghyurk
authors.initials: J
authors.lastname: Park
authors.affiliation: Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Jaesu
authors.initials: J
authors.lastname: Kim
authors.affiliation: Soft I/O Interface Research Section, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea.
authors.forename: Jun-Han
authors.initials: JH
authors.lastname: Han
authors.affiliation: Smart I/O Control Research Section, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea.
authors.forename: Jong-Heon
authors.initials: JH
authors.lastname: Yang
authors.affiliation: Soft I/O Interface Research Section, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea.
authors.forename: Byoung-Gon
authors.initials: BG
authors.lastname: Yu
authors.affiliation: Smart I/O Control Research Section, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea.
authors.forename: Chi-Sun
authors.initials: CS
authors.lastname: Hwang
authors.affiliation: Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Korea.|IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Seong
authors.initials: S
authors.lastname: Chu Lim
authors.affiliation: Soft I/O Interface Research Section, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea.
authors.forename: Jeong-Ik
authors.initials: JI
authors.lastname: Lee