title: Resonant energy transfer between patterned InGaN/GaN quantum wells and CdSe/ZnS quantum dots.
abstract: We explore an easy method for preparation of a hybrid device of a photonic crystal InGaN/GaN quantum well (QW) and colloidal quantum dots using conventional photolithography. It is demonstrated from electroluminescence spectra that Förster resonance energy transfer takes place efficiently between the photonic crystal InGaN/GaN QW and CdSe/ZnS colloidal quantum dots. From the photoluminescence decay of the InGaN/GaN QW, the largest Förster resonance energy transfer efficiency between the photonic crystal GaN quantum well and colloidal quantum dots is measured as 88% and the corresponding Förster-resonance-energy-transfer fraction reached 42%. An easy approach is explored to realize a highly efficient electrically driven colloidal quantum dot device using the Förster-resonance-energy-transfer mechanism.
authors.affiliation: State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. xsxu@semi.ac.cn.
authors.forename: Xingsheng
authors.initials: X
authors.lastname: Xu
authors.affiliation: State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. xsxu@semi.ac.cn.
authors.forename: Huayong
authors.initials: H
authors.lastname: Wang