title: Plasmon-gating photoluminescence in graphene/GeSi quantum dots hybrid structures.
abstract: The ability to control light-matter interaction is central to several potential applications in lasing, sensing, and communication. Graphene plasmons provide a way of strongly enhancing the interaction and realizing ultrathin optoelectronic devices. Here, we find that photoluminescence (PL) intensities of the graphene/GeSi quantum dots hybrid structures are saturated and quenched under positive and negative voltages at the excitation of 325 nm, respectively. A mechanism called plasmon-gating effect is proposed to reveal the PL dependence of the hybrid structures on the external electric field. On the contrary, the PL intensities at the excitation of 405 and 795 nm of the hybrid structures are quenched due to the charge transfer by tuning the Fermi level of graphene or the blocking of the excitons recombination by excitons separation effect. The results also provide an evidence for the charge transfer mechanism. The plasmon gating effect on the PL provides a new way to control the optical properties of graphene/QD hybrid structures.
authors.affiliation: State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China.|Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599, USA.
authors.forename: Yulu
authors.initials: Y
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China.
authors.forename: Qiong
authors.initials: Q
authors.lastname: Wu
authors.affiliation: State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China.
authors.forename: Yingjie
authors.initials: Y
authors.lastname: Ma
authors.affiliation: State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China.
authors.forename: Tao
authors.initials: T
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China.
authors.forename: Yongliang
authors.initials: Y
authors.lastname: Fan
authors.affiliation: State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China.
authors.forename: Xinju
authors.initials: X
authors.lastname: Yang
authors.affiliation: State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China.
authors.forename: Zhenyang
authors.initials: Z
authors.lastname: Zhong
authors.affiliation: SHU-SolarE R&D Lab, Department of Physics, College of Science, Shanghai University, Shanghai 200444, People's Republic of China.
authors.forename: Fei
authors.initials: F
authors.lastname: Xu
authors.affiliation: Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599, USA.
authors.forename: Jianping
authors.initials: J
authors.lastname: Lu
authors.affiliation: State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China.
authors.forename: Zuimin
authors.initials: Z
authors.lastname: Jiang