title: Direct synthesis of large-scale hierarchical MoS2 films nanostructured with orthogonally oriented vertically and horizontally aligned layers.
abstract: Hierarchical MoS2 thin films nanostructured with orthogonally oriented vertically and horizontally aligned layers were designed and excellent passive Q-switching behavior in a fiber laser was demonstrated. A special solvothermal system containing a small amount of water was applied to synthesize such hierarchical MoS2 nanofilms, in which the reaction rate is carefully controlled by the diffusion rate of the sulfur precursor. Wafer-scale MoS2 thin films with hierarchical structures are formed on various substrates. Moreover, the hierarchical MoS2 thin films consisting of both vertical and horizontal layers can be tuned to possess only horizontally aligned layers by controlling the solvothermal time. To show the potential application proof-of-concept, the nonlinear optical performance of the hierarchical MoS2 was investigated. Superior passive Q-switching behavior in a fiber laser with a minimum pulse width of 2.2 μs was observed.
authors.affiliation: Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China. jwang@siom.ac.cn.
authors.forename: Xiaoyan
authors.initials: X
authors.lastname: Zhang
authors.affiliation: Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China. jwang@siom.ac.cn.
authors.forename: Saifeng
authors.initials: S
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
authors.forename: Bohua
authors.initials: B
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
authors.forename: Hao
authors.initials: H
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
authors.forename: Kan
authors.initials: K
authors.lastname: Wu
authors.affiliation: Department of Materials Science, Fudan University, Shanghai 200433, China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China. jwang@siom.ac.cn.
authors.forename: Jintai
authors.initials: J
authors.lastname: Fan
authors.affiliation: Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China. jwang@siom.ac.cn.
authors.forename: Shen
authors.initials: S
authors.lastname: Qi
authors.affiliation: Department of Materials Science, Fudan University, Shanghai 200433, China.
authors.forename: Xiaoli
authors.initials: X
authors.lastname: Cui
authors.affiliation: Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China. jwang@siom.ac.cn.
authors.forename: Long
authors.initials: L
authors.lastname: Zhang
authors.affiliation: Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China. jwang@siom.ac.cn and State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China.
authors.forename: Jun
authors.initials: J
authors.lastname: Wang