title: Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid.
abstract: We report an investigation of anisotropic magnetoresistance (AMR) and anomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxial Y(3)Fe(5)O(12) (YIG) ferromagnetic insulator films. For the Pt/YIG hybrid, large spin-Hall magne toresistance (SMR) along with a sizable conventional anisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence of AHR were observed in the temperature range of 5-300 K. In contrast, a reduced SMR with negligible CAMR and AHR was found in Rh/YIG hybrid. Since CAMR and AHR are characteristics for all ferromagnetic metals, our results suggest that the Pt is likely magnetized by YIG due to the magnetic proximity effect (MPE) while Rh remains free of MPE. Thus the Rh/YIG hybrid could be an ideal model system to explore physics and devices associated with pure spin current.
authors.affiliation: Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China.
authors.forename: T
authors.initials: T
authors.lastname: Shang
authors.affiliation: Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China.
authors.forename: Q F
authors.initials: QF
authors.lastname: Zhan
authors.affiliation: Department of Physics, Tongji University, Shanghai, 200092, P. R. China.
authors.forename: L
authors.initials: L
authors.lastname: Ma
authors.affiliation: Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China.
authors.forename: H L
authors.initials: HL
authors.lastname: Yang
authors.affiliation: Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China.
authors.forename: Z H
authors.initials: ZH
authors.lastname: Zuo
authors.affiliation: Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China.
authors.forename: Y L
authors.initials: YL
authors.lastname: Xie
authors.affiliation: Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China.
authors.forename: H H
authors.initials: HH
authors.lastname: Li
authors.affiliation: Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China.
authors.forename: L P
authors.initials: LP
authors.lastname: Liu
authors.affiliation: Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China.
authors.forename: B M
authors.initials: BM
authors.lastname: Wang
authors.affiliation: Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3 117583, Singapore.
authors.forename: Y H
authors.initials: YH
authors.lastname: Wu
authors.affiliation: Department of Physics, University of Arizona, Tucson, Arizona 85721, USA.
authors.forename: S
authors.initials: S
authors.lastname: Zhang
authors.affiliation: Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China.
authors.forename: Run-Wei
authors.initials: RW
authors.lastname: Li