title: Phosphor-free white-light emitters using in-situ GaN nanostructures grown by metal organic chemical vapor deposition.
abstract: Realization of phosphor-free white-light emitters is becoming an important milestone on the road to achieve high quality and reliability in high-power white-light-emitting diodes (LEDs). However, most of reported methods have not been applied to practical use because of their difficulties and complexity. In this study we demonstrated a novel and practical growth method for phosphor-free white-light emitters without any external processing, using only in-situ high-density GaN nanostructures that were formed by overgrowth on a silicon nitride (SiNx) interlayer deposited by metal organic chemical vapor deposition. The nano-sized facets produced variations in the InGaN thickness and the indium concentration when an InGaN/GaN double heterostructure was monolithically grown on them, leading to white-color light emission. It is important to note that the in-situ SiNx interlayer not only facilitated the GaN nano-facet structure, but also blocked the propagation of dislocations.
authors.affiliation: Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-Optical Engineering, Korea Polytechnic University (KPU), Siheung-si, Gyeonggi-do 429-793, Republic of Korea.
authors.forename: Daehong
authors.initials: D
authors.lastname: Min
authors.affiliation: Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-Optical Engineering, Korea Polytechnic University (KPU), Siheung-si, Gyeonggi-do 429-793, Republic of Korea.
authors.forename: Donghwy
authors.initials: D
authors.lastname: Park
authors.affiliation: Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-Optical Engineering, Korea Polytechnic University (KPU), Siheung-si, Gyeonggi-do 429-793, Republic of Korea.
authors.forename: Jongjin
authors.initials: J
authors.lastname: Jang
authors.affiliation: Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-Optical Engineering, Korea Polytechnic University (KPU), Siheung-si, Gyeonggi-do 429-793, Republic of Korea.
authors.forename: Kyuseung
authors.initials: K
authors.lastname: Lee
authors.affiliation: Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-Optical Engineering, Korea Polytechnic University (KPU), Siheung-si, Gyeonggi-do 429-793, Republic of Korea.
authors.forename: Okhyun
authors.initials: O
authors.lastname: Nam