title: Monolithically Integrated High-β Nanowire Lasers on Silicon.
abstract: Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.
authors.affiliation: Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany.
authors.forename: B
authors.initials: B
authors.lastname: Mayer
authors.affiliation: Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany.
authors.forename: L
authors.initials: L
authors.lastname: Janker
authors.affiliation: Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany.
authors.forename: B
authors.initials: B
authors.lastname: Loitsch
authors.affiliation: Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany.
authors.forename: J
authors.initials: J
authors.lastname: Treu
authors.affiliation: Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany.
authors.forename: T
authors.initials: T
authors.lastname: Kostenbader
authors.affiliation: Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany.
authors.forename: S
authors.initials: S
authors.lastname: Lichtmannecker
authors.affiliation: Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany.
authors.forename: T
authors.initials: T
authors.lastname: Reichert
authors.affiliation: Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany.
authors.forename: S
authors.initials: S
authors.lastname: Morkötter
authors.affiliation: Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany.
authors.forename: M
authors.initials: M
authors.lastname: Kaniber
authors.affiliation: Institute of Advanced Study, Technische Universität München , Lichtenbergstraße 2a, 85748 Garching, Germany.
authors.forename: G
authors.initials: G
authors.lastname: Abstreiter
authors.affiliation: Institute for Theoretical Physics, University of Bremen , 28334 Bremen, Germany.
authors.forename: C
authors.initials: C
authors.lastname: Gies
authors.affiliation: Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany.
authors.forename: G
authors.initials: G
authors.lastname: Koblmüller
authors.affiliation: Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany.
authors.forename: J J
authors.initials: JJ
authors.lastname: Finley
mesh_terms: D007834:Lasers; D008027:Light; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon
keywords: GaAs-AlGaAs; Nanowire lasers; monolithic integration; optical pumping