title: Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design.
abstract: The effects of graphene n-doping on a metal-graphene contact are studied in combination with 1D edge contacts, presenting a record contact resistance of 23 Ω μm at room temperature (19 Ω μm at 100 K). This contact scheme is applied to a graphene-perovskite hybrid photodetector, significantly improving its performance (0.6 → 1.8 A W(-1) in photoresponsivity and 3.3 × 10(4) → 5.4 × 10(4) Jones in detectivity).
authors.affiliation: School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, Korea.
authors.forename: Hyung-Youl
authors.initials: HY
authors.lastname: Park
authors.affiliation: Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA.
authors.forename: Woo-Shik
authors.initials: WS
authors.lastname: Jung
authors.affiliation: School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, Korea.
authors.forename: Dong-Ho
authors.initials: DH
authors.lastname: Kang
authors.affiliation: School of Electronics and Electrical Engineering, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Korea.
authors.forename: Jaeho
authors.initials: J
authors.lastname: Jeon
authors.affiliation: School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, Korea.
authors.forename: Gwangwe
authors.initials: G
authors.lastname: Yoo
authors.affiliation: School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, Korea.
authors.forename: Yongkook
authors.initials: Y
authors.lastname: Park
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712, Korea.
authors.forename: Jinhee
authors.initials: J
authors.lastname: Lee
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712, Korea.
authors.forename: Yun Hee
authors.initials: YH
authors.lastname: Jang
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Yongin, 446-712, Korea.
authors.forename: Jaeho
authors.initials: J
authors.lastname: Lee
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd, Yongin, 446-712, Korea.
authors.forename: Seongjun
authors.initials: S
authors.lastname: Park
authors.affiliation: School of Electrical Engineering, Korea University, Seoul, 136-701, Korea.
authors.forename: Hyun-Yong
authors.initials: HY
authors.lastname: Yu
authors.affiliation: Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 305-338, Korea.
authors.forename: Byungha
authors.initials: B
authors.lastname: Shin
authors.affiliation: School of Electronics and Electrical Engineering, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Korea.
authors.forename: Sungjoo
authors.initials: S
authors.lastname: Lee
authors.affiliation: School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, Korea.
authors.forename: Jin-Hong
authors.initials: JH
authors.lastname: Park
keywords: contact resistance; doping; edge contact; graphene; optoelectronic devices