title: Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2.
abstract: Monolayer molybdenum disulfide (MoS2) has attracted great interest due to its potential applications in electronics and optoelectronics. Ideally, single-crystal growth over a large area is necessary to preserve its intrinsic figure of merit but is very challenging to achieve. Here, we report an oxygen-assisted chemical vapor deposition method for growth of single-crystal monolayer MoS2. We found that the growth of MoS2 domains can be greatly improved by introducing a small amount of oxygen into the growth environment. Triangular monolayer MoS2 domains can be achieved with sizes up to ∼350 μm and a room-temperature mobility up to ∼90 cm(2)/(V·s) on SiO2. The role of oxygen is not only to effectively prevent the poisoning of precursors but also to eliminate defects during the growth. Our work provides an advanced method for high-quality single-crystal monolayer MoS2 growth.
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.|College of Physics and Electronic Information, Gannan Normal University , Ganzhou, Jiangxi 341000, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Chen
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Jing
authors.initials: J
authors.lastname: Zhao
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Jing
authors.initials: J
authors.lastname: Zhang
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.|Collaborative Innovation Center of Quantum Matter , Beijing 100190, China.
authors.forename: Lin
authors.initials: L
authors.lastname: Gu
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Zhenzhong
authors.initials: Z
authors.lastname: Yang
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Xiaomin
authors.initials: X
authors.lastname: Li
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Hua
authors.initials: H
authors.lastname: Yu
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Xuetao
authors.initials: X
authors.lastname: Zhu
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Rong
authors.initials: R
authors.lastname: Yang
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Dongxia
authors.initials: D
authors.lastname: Shi
authors.affiliation: Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Xuechun
authors.initials: X
authors.lastname: Lin
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Jiandong
authors.initials: J
authors.lastname: Guo
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Xuedong
authors.initials: X
authors.lastname: Bai
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.|Collaborative Innovation Center of Quantum Matter , Beijing 100190, China.
authors.forename: Guangyu
authors.initials: G
authors.lastname: Zhang