title: Atomically precise semiconductor--graphene and hBN interfaces by Ge intercalation.
abstract: The full exploration of the potential, which graphene offers to nanoelectronics requires its integration into semiconductor technology. So far the real-world applications are limited by the ability to concomitantly achieve large single-crystalline domains on dielectrics and semiconductors and to tailor the interfaces between them. Here we show a new direct bottom-up method for the fabrication of high-quality atomically precise interfaces between 2D materials, like graphene and hexagonal boron nitride (hBN), and classical semiconductor via Ge intercalation. Using angle-resolved photoemission spectroscopy and complementary DFT modelling we observed for the first time that epitaxially grown graphene with the Ge monolayer underneath demonstrates Dirac Fermions unaffected by the substrate as well as an unperturbed electronic band structure of hBN. This approach provides the intrinsic relativistic 2D electron gas towards integration in semiconductor technology. Hence, these new interfaces are a promising path for the integration of graphene and hBN into state-of-the-art semiconductor technology.
authors.affiliation: Faculty of Physics, University of Vienna, Strudlhofgasse 4, A-1090 Vienna, Austria.|II. Physikalisches Institut, Universität zu Köln, Zülpicher Straβe 77, D-50937 Cologne, Germany.|Department of Materials Science, Moscow State University, Leninskiye Gory 1/3, 119992, Moscow, Russia.
authors.forename: N I
authors.initials: NI
authors.lastname: Verbitskiy
authors.affiliation: II. Physikalisches Institut, Universität zu Köln, Zülpicher Straβe 77, D-50937 Cologne, Germany.|IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany.|St. Petersburg State University, 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia.
authors.forename: A V
authors.initials: AV
authors.lastname: Fedorov
authors.affiliation: Department of Physical and Chemical Sciences, University of L'Aquila, Via Vetoio 10, I-67100 L'Aquila, Italy.|CNR-SPIN, Via Vetoio 10, I-67100 L'Aquila, Italy.
authors.forename: G
authors.initials: G
authors.lastname: Profeta
authors.affiliation: CNR-SPIN, Via Vetoio 10, I-67100 L'Aquila, Italy.
authors.forename: A
authors.initials: A
authors.lastname: Stroppa
authors.affiliation: Elettra Sincrotrone Trieste, Strada Statale 14 km 163.5, I-34149 Trieste, Italy.
authors.forename: L
authors.initials: L
authors.lastname: Petaccia
authors.affiliation: II. Physikalisches Institut, Universität zu Köln, Zülpicher Straβe 77, D-50937 Cologne, Germany.|St. Petersburg State University, 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia.|Institute of Solid State Physics, Dresden University of Technology, Helmholtzstraße 10, D-01062 Dresden, Germany.
authors.forename: B
authors.initials: B
authors.lastname: Senkovskiy
authors.affiliation: Institute of Functional Interfaces (IFG), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany.
authors.forename: A
authors.initials: A
authors.lastname: Nefedov
authors.affiliation: Institute of Functional Interfaces (IFG), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany.
authors.forename: C
authors.initials: C
authors.lastname: Wöll
authors.affiliation: St. Petersburg State University, 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia.
authors.forename: D Yu
authors.initials: DY
authors.lastname: Usachov
authors.affiliation: St. Petersburg State University, 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia.|Institute of Solid State Physics, Dresden University of Technology, Helmholtzstraße 10, D-01062 Dresden, Germany.|IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Spain.|Donostia International Physics Center (DIPC), Departamento de Fisica de Materiales and CFM-MPC UPV/EHU, 20080 San Sebastian, Spain.
authors.forename: D V
authors.initials: DV
authors.lastname: Vyalikh
authors.affiliation: JSC "Giredmet" SRC RF, Tolmachevky St. 5-1 B, 119017 Moscow, Russia.|Department of Chemistry, Moscow State University, Leninskiye Gory 1/3, 119992, Moscow, Russia.
authors.forename: L V
authors.initials: LV
authors.lastname: Yashina
authors.affiliation: Department of Materials Science, Moscow State University, Leninskiye Gory 1/3, 119992, Moscow, Russia.
authors.forename: A A
authors.initials: AA
authors.lastname: Eliseev
authors.affiliation: Faculty of Physics, University of Vienna, Strudlhofgasse 4, A-1090 Vienna, Austria.
authors.forename: T
authors.initials: T
authors.lastname: Pichler
authors.affiliation: II. Physikalisches Institut, Universität zu Köln, Zülpicher Straβe 77, D-50937 Cologne, Germany.
authors.forename: A
authors.initials: A
authors.lastname: Grüneis