title: Rational Design of Ultralarge Pb1-x Snx Te Nanoplates for Exploring Crystalline Symmetry-Protected Topological Transport.
abstract: Ultralarge topological crystalline insulator Pb1-x Snx Te nanoplates are developed by controlling substrate surface chemical properties in a cost-efficient chemical vapor deposition (CVD) process. Dominant topological surface transport is demonstrated by a gate-voltage-controlled weak (anti)localization effect, indicating the potential application of these nanoplates to low-dissipation topological transistors.
authors.affiliation: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors.forename: Qisheng
authors.initials: Q
authors.lastname: Wang
authors.affiliation: SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, P. R. China.
authors.forename: Kaiming
authors.initials: K
authors.lastname: Cai
authors.affiliation: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors.forename: Jie
authors.initials: J
authors.lastname: Li
authors.affiliation: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors.forename: Yun
authors.initials: Y
authors.lastname: Huang
authors.affiliation: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors.forename: Zhenxing
authors.initials: Z
authors.lastname: Wang
authors.affiliation: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors.forename: Kai
authors.initials: K
authors.lastname: Xu
authors.affiliation: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors.forename: Feng
authors.initials: F
authors.lastname: Wang
authors.affiliation: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors.forename: Xueying
authors.initials: X
authors.lastname: Zhan
authors.affiliation: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors.forename: Fengmei
authors.initials: F
authors.lastname: Wang
authors.affiliation: SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, P. R. China.
authors.forename: Kaiyou
authors.initials: K
authors.lastname: Wang
authors.affiliation: CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors.forename: Jun
authors.initials: J
authors.lastname: He
keywords: 2D nanoplates; antilocalization effects; surface electronic transport; topological crystalline insulators; transistors