title: Varying Surface Chemistries for p-Doped and n-Doped Silicon Nanocrystals and Impact on Photovoltaic Devices.
abstract: Doping of quantum confined nanocrystals offers unique opportunities to control the bandgap and the Fermi energy level. In this contribution, boron-doped (p-doped) and phosphorus-doped (n-doped) quantum confined silicon nanocrystals (SiNCs) are surface-engineered in ethanol by an atmospheric pressure radio frequency microplasma. We reveal that surface chemistries induced on the nanocrystals strongly depend on the type of dopants and result in considerable diverse optoelectronic properties (e.g., photoluminescence quantum yield is enhanced more than 6 times for n-type SiNCs). Changes in the position of the SiNCs Fermi levels are also studied and implications for photovoltaic application are discussed.
authors.affiliation: Nanotechnology & Integrated Bio-Engineering Centre (NIBEC), Ulster University , Shore Road, Jordanstown BT37 0QB, U.K.
authors.forename: Tamilselvan
authors.initials: T
authors.lastname: Velusamy
authors.affiliation: Nanotechnology & Integrated Bio-Engineering Centre (NIBEC), Ulster University , Shore Road, Jordanstown BT37 0QB, U.K.
authors.forename: Somak
authors.initials: S
authors.lastname: Mitra
authors.affiliation: Nanotechnology & Integrated Bio-Engineering Centre (NIBEC), Ulster University , Shore Road, Jordanstown BT37 0QB, U.K.
authors.forename: Manuel
authors.initials: M
authors.lastname: Macias-Montero
authors.affiliation: Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST) , Central 2, Umezono 1-1-1, Tsukuba, 305-8568, Japan.
authors.forename: Vladimir
authors.initials: V
authors.lastname: Svrcek
authors.affiliation: Nanotechnology & Integrated Bio-Engineering Centre (NIBEC), Ulster University , Shore Road, Jordanstown BT37 0QB, U.K.
authors.forename: Davide
authors.initials: D
authors.lastname: Mariotti
keywords: Fermi level; PV device; p/n-SiNCs; quantum yield; surface chemistry; surface engineering