title: Negative photoconductivity of InAs nanowires.
abstract: Negative photoconductivity is observed in InAs nanowires (NWs) without a surface defective layer. The negative photoconductivity is strongly dependent on the wavelength and intensity of the light, and is also sensitive to the environmental atmosphere. Two kinds of mechanisms are discerned to work together. One is related to gas adsorption, which is photodesorption of water molecules and photo-assisted chemisorption of O2 molecules. The other one can be attributed to the photogating effect introduced by the native oxide layer outside the NWs.
authors.affiliation: Key laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China. qingchen@pku.edu.cn.
authors.forename: Yuxiang
authors.initials: Y
authors.lastname: Han
authors.affiliation: Key laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China. qingchen@pku.edu.cn.
authors.forename: Xiao
authors.initials: X
authors.lastname: Zheng
authors.affiliation: Key laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China. qingchen@pku.edu.cn.
authors.forename: Mengqi
authors.initials: M
authors.lastname: Fu
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Dong
authors.initials: D
authors.lastname: Pan
authors.affiliation: Key laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China. qingchen@pku.edu.cn.
authors.forename: Xing
authors.initials: X
authors.lastname: Li
authors.affiliation: Key laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China. qingchen@pku.edu.cn.
authors.forename: Yao
authors.initials: Y
authors.lastname: Guo
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Jianhua
authors.initials: J
authors.lastname: Zhao
authors.affiliation: Key laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China. qingchen@pku.edu.cn.
authors.forename: Qing
authors.initials: Q
authors.lastname: Chen