title: Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors.
abstract: Molybdenum ditelluride (α-MoTe2) is an emerging transition-metal dichalcogenide (TMD) semiconductor that has been attracting attention due to its favorable optical and electronic properties. Field-effect transistors (FETs) based on few-layer α-MoTe2 nanosheets have previously shown ambipolar behavior with strong p-type and weak n-type conduction. We have employed a direct imprinting technique following mechanical nanosheet exfoliation to fabricate high-performance complementary inverters using α-MoTe2 as the semiconductor for the p-channel FETs and MoS2 as the semiconductor for the n-channel FETs. To avoid ambipolar behavior and produce α-MoTe2 FETs with clean p-channel characteristics, we have employed the high-workfunction metal platinum for the source and drain contacts. As a result, our α-MoTe2 nanosheet p-channel FETs show hole mobilities up to 20 cm(2)/(V s), on/off ratios up to 10(5), and a subthreshold slope of 255 mV/decade. For our complementary inverters composed of few-layer α-MoTe2 p-channel FETs and MoS2 n-channel FETs we have obtained voltage gains as high as 33, noise margins as high as 0.38 VDD, a switching delay of 25 μs, and a static power consumption of a few nanowatts.
authors.affiliation: Institute of Physics and Applied Physics, ‡School of Mechanical Engineering, and §School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea.
authors.forename: Atiye
authors.initials: A
authors.lastname: Pezeshki
authors.affiliation: Institute of Physics and Applied Physics, ‡School of Mechanical Engineering, and §School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea.
authors.forename: Seyed Hossein
authors.initials: SH
authors.lastname: Hosseini Shokouh
authors.affiliation: Institute of Physics and Applied Physics, ‡School of Mechanical Engineering, and §School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea.
authors.forename: Pyo Jin
authors.initials: PJ
authors.lastname: Jeon
authors.affiliation: Institute of Physics and Applied Physics, ‡School of Mechanical Engineering, and §School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea.
authors.forename: Iman
authors.initials: I
authors.lastname: Shackery
authors.affiliation: Institute of Physics and Applied Physics, ‡School of Mechanical Engineering, and §School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea.
authors.forename: Jin Sung
authors.initials: JS
authors.lastname: Kim
authors.affiliation: Institute of Physics and Applied Physics, ‡School of Mechanical Engineering, and §School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea.
authors.forename: Il-Kwon
authors.initials: IK
authors.lastname: Oh
authors.affiliation: Institute of Physics and Applied Physics, ‡School of Mechanical Engineering, and §School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea.
authors.forename: Seong Chan
authors.initials: SC
authors.lastname: Jun
authors.affiliation: Institute of Physics and Applied Physics, ‡School of Mechanical Engineering, and §School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea.
authors.forename: Hyungjun
authors.initials: H
authors.lastname: Kim
authors.affiliation: Institute of Physics and Applied Physics, ‡School of Mechanical Engineering, and §School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea.
authors.forename: Seongil
authors.initials: S
authors.lastname: Im
keywords: MoS2 nanosheet; MoTe2 nanosheet; complementary inverter; switching speed; voltage gain