title: AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy.
abstract: AlN nanowall structures were grown on Si (111) substrate using molecular beam epitaxy at substrate temperature of 700 °C with N/Al flux ratios ranging from 50 to 660. A few types of other AlN nanostructures were also grown under the nitrogen-rich conditions. The AlN nanowalls were ranged typically 60-120 nm in width and from 190 to 470 nm in length by changing N/Al flux ratio. The AlN nanowall structures grown along the c-plane consisted of AlN (0002) crystal with full-width at half maximum of the rocking curve about 5000 arcsec.
authors.affiliation: Department of Nanomechanics, Graduate School of Engineering Tohoku University, 6-6-01, Aramaki Aza Aoba, Aoba-ku, Sendai, Japan. y.tamura@hane.mech.tohoku.ac.jp.
authors.forename: Yosuke
authors.initials: Y
authors.lastname: Tamura
authors.affiliation: Department of Nanomechanics, Graduate School of Engineering Tohoku University, 6-6-01, Aramaki Aza Aoba, Aoba-ku, Sendai, Japan.
authors.forename: Kazuhiro
authors.initials: K
authors.lastname: Hane
keywords: AlN; Epitaxial growth; MBE; Nanostructure; Nanowall; Si substrate; XRD