title: Whole-Visible-Light Absorption of a Mixed-Valence Silver Vanadate Semiconductor Stemming from an Assistant Effect of d-d Transition.
abstract: Wide-light absorption is important to semiconductors exploited in many applications such as photocatalysts, photovoltaic devices, and light-emitting diodes, which can effectively improve solar energy utilization. Especially for photocatalysts, the development and design of new semiconductors that harvest the whole-visible-light region (λ = 400-800 nm) is rarely reported, which is still a tremendous challenge up to now. Here we realize whole-visible-light absorption up to 900 nm for a semiconductor by means of construction of a mixed-valence Ag0.68V2O5, which results from an assistant effect of d-d transition. Ag0.68V2O5 serving as a photocatalyst obviously exhibits photoelectrochemical and photocatalytic properties. Our results provide a brand-new feasible design strategy to broaden the light absorption of semiconductors and highlight a route to further make the best use of the full solar spectrum.
authors.affiliation: Department of Chemistry, Harbin Institute of Technology , Harbin 150001, P. R. China.|School of Chemistry and Chemical Engineering, Jiangsu University , Zhenjiang 212013, P. R. China.
authors.forename: Hongjun
authors.initials: H
authors.lastname: Dong
authors.affiliation: Department of Chemistry, Harbin Institute of Technology , Harbin 150001, P. R. China.
authors.forename: Gang
authors.initials: G
authors.lastname: Chen
authors.affiliation: Department of Chemistry, Harbin Institute of Technology , Harbin 150001, P. R. China.
authors.forename: Jingxue
authors.initials: J
authors.lastname: Sun
authors.affiliation: Department of Chemistry, Harbin Institute of Technology , Harbin 150001, P. R. China.
authors.forename: Chunmei
authors.initials: C
authors.lastname: Li
authors.affiliation: Department of Chemistry, Harbin Institute of Technology , Harbin 150001, P. R. China.
authors.forename: Yidong
authors.initials: Y
authors.lastname: Hu
authors.affiliation: Department of Chemistry, Harbin Institute of Technology , Harbin 150001, P. R. China.
authors.forename: Zhonghui
authors.initials: Z
authors.lastname: Han