title: A highly efficient CMOS nanoplasmonic crystal enhanced slow-wave thermal emitter improves infrared gas-sensing devices.
abstract: The application of plasmonics to thermal emitters is generally assisted by absorptive losses in the metal because Kirchhoff's law prescribes that only good absorbers make good thermal emitters. Based on a designed plasmonic crystal and exploiting a slow-wave lattice resonance and spontaneous thermal plasmon emission, we engineer a tungsten-based thermal emitter, fabricated in an industrial CMOS process, and demonstrate its markedly improved practical use in a prototype non-dispersive infrared (NDIR) gas-sensing device. We show that the emission intensity of the thermal emitter at the CO(2) absorption wavelength is enhanced almost 4-fold compared to a standard non-plasmonic emitter, which enables a proportionate increase in the signal-to-noise ratio of the CO(2) gas sensor.
authors.affiliation: The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, UK.
authors.forename: Andreas
authors.initials: A
authors.lastname: Pusch
authors.affiliation: Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK.
authors.forename: Andrea
authors.initials: A
authors.lastname: De Luca
authors.affiliation: The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, UK.
authors.forename: Sang S
authors.initials: SS
authors.lastname: Oh
authors.affiliation: The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, UK.
authors.forename: Sebastian
authors.initials: S
authors.lastname: Wuestner
authors.affiliation: The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, UK.
authors.forename: Tyler
authors.initials: T
authors.lastname: Roschuk
authors.affiliation: The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, UK.|Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore.
authors.forename: Yiguo
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Cambridge CMOS Sensors Ltd., Cambridge CB4 0DL, UK.
authors.forename: Sophie
authors.initials: S
authors.lastname: Boual
authors.affiliation: Cambridge CMOS Sensors Ltd., Cambridge CB4 0DL, UK.
authors.forename: Zeeshan
authors.initials: Z
authors.lastname: Ali
authors.affiliation: The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, UK.
authors.forename: Chris C
authors.initials: CC
authors.lastname: Phillips
authors.affiliation: Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore.
authors.forename: Minghui
authors.initials: M
authors.lastname: Hong
authors.affiliation: The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, UK.
authors.forename: Stefan A
authors.initials: SA
authors.lastname: Maier
authors.affiliation: Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK.
authors.forename: Florin
authors.initials: F
authors.lastname: Udrea
authors.affiliation: Cambridge CMOS Sensors Ltd., Cambridge CB4 0DL, UK.
authors.forename: Richard H
authors.initials: RH
authors.lastname: Hopper
authors.affiliation: The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, UK.
authors.forename: Ortwin
authors.initials: O
authors.lastname: Hess