title: Graphene Distributed Amplifiers: Generating Desirable Gain for Graphene Field-Effect Transistors.
abstract: Ever since its discovery, graphene bears great expectations in high frequency electronics due to its irreplaceably high carrier mobility. However, it has long been blamed for the weakness in generating gains, which seriously limits its pace of development. Distributed amplification, on the other hand, has successfully been used in conventional semiconductors to increase the amplifiers' gain-bandwidth product. In this paper, distributed amplification is first applied to graphene. Transmission lines phase-synchronize paralleled graphene field-effect transistors (GFETs), combining the gain of each stage in an additive manner. Simulations were based on fabricated GFETs whose fT ranged from 8.5 GHz to 10.5 GHz and fmax from 12 GHz to 14 GHz. A simulated four-stage graphene distributed amplifier achieved up to 4 dB gain and 3.5 GHz bandwidth, which could be realized with future IC processes. A PCB level graphene distributed amplifier was fabricated as a proof of circuit concept.
authors.affiliation: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.|Department of Electrical &Computer Engineering, University of California, San Diego, La Jolla, CA 92093, USA9.
authors.forename: Hongming
authors.initials: H
authors.lastname: Lyu
authors.affiliation: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.
authors.forename: Qi
authors.initials: Q
authors.lastname: Lu
authors.affiliation: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.
authors.forename: Yilin
authors.initials: Y
authors.lastname: Huang
authors.affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China.
authors.forename: Teng
authors.initials: T
authors.lastname: Ma
authors.affiliation: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.
authors.forename: Jinyu
authors.initials: J
authors.lastname: Zhang
authors.affiliation: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.
authors.forename: Xiaoming
authors.initials: X
authors.lastname: Wu
authors.affiliation: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.
authors.forename: Zhiping
authors.initials: Z
authors.lastname: Yu
authors.affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China.
authors.forename: Wencai
authors.initials: W
authors.lastname: Ren
authors.affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China.
authors.forename: Hui-Ming
authors.initials: HM
authors.lastname: Cheng
authors.affiliation: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.|Tsinghua National Laboratory for Information Science and Technology (TNList), Beijing, 100084, China.
authors.forename: Huaqiang
authors.initials: H
authors.lastname: Wu
authors.affiliation: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.|Tsinghua National Laboratory for Information Science and Technology (TNList), Beijing, 100084, China.
authors.forename: He
authors.initials: H
authors.lastname: Qian