title: Electron States of Uniaxially Strained Graphene.
abstract: We report an experimental study of electron states and the resulting electronic transport properties of uniaxially strained graphene. For this study we developed a novel strain application method that is compatible with the planar device technology. We identify the value of the strain induced in graphene by Raman spectroscopy and show with atomic force microscopy that its topography consists of wrinkles up to 4 nm height aligned along the direction of the applied strain. Transport experiments reveal a broadening of the charge neutrality region and the convergence of Landau levels to multiple Dirac points in Landau-fan diagrams. These observations are consistent with large fluctuations of the scalar potential via the strain-induced wrinkles, which is experimentally observed for the first time.
authors.affiliation: Department of Applied Physics, University of Tokyo , Tokyo, Japan.
authors.forename: Hiroki
authors.initials: H
authors.lastname: Shioya
authors.affiliation: Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter , Exeter EX4 4QF, U.K.
authors.forename: Saverio
authors.initials: S
authors.lastname: Russo
authors.affiliation: Department of Applied Physics, University of Tokyo , Tokyo, Japan.
authors.forename: Michihisa
authors.initials: M
authors.lastname: Yamamoto
authors.affiliation: Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter , Exeter EX4 4QF, U.K.
authors.forename: Monica F
authors.initials: MF
authors.lastname: Craciun
authors.affiliation: Department of Applied Physics, University of Tokyo , Tokyo, Japan.|Center for Emergent Matter Science (CEMS), RIKEN , Wako, Saitama, Japan.
authors.forename: Seigo
authors.initials: S
authors.lastname: Tarucha
keywords: Graphene; Landau-fan diagram; planar device structures; strain induced potentials; straintronics; uniaxial strain