title: Epitaxial Growth of Thin Ferroelectric Polymer Films on Graphene Layer for Fully Transparent and Flexible Nonvolatile Memory.
abstract: Enhancing the device performance of organic memory devices while providing high optical transparency and mechanical flexibility requires an optimized combination of functional materials and smart device architecture design. However, it remains a great challenge to realize fully functional transparent and mechanically durable nonvolatile memory because of the limitations of conventional rigid, opaque metal electrodes. Here, we demonstrate ferroelectric nonvolatile memory devices that use graphene electrodes as the epitaxial growth substrate for crystalline poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) polymer. The strong crystallographic interaction between PVDF-TrFE and graphene results in the orientation of the crystals with distinct symmetry, which is favorable for polarization switching upon the electric field. The epitaxial growth of PVDF-TrFE on a graphene layer thus provides excellent ferroelectric performance with high remnant polarization in metal/ferroelectric polymer/metal devices. Furthermore, a fully transparent and flexible array of ferroelectric field effect transistors was successfully realized by adopting transparent poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] semiconducting polymer.
authors.forename: Kang Lib
authors.initials: KL
authors.lastname: Kim
authors.forename: Wonho
authors.initials: W
authors.lastname: Lee
authors.forename: Sun Kak
authors.initials: SK
authors.lastname: Hwang
authors.affiliation: School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 689-798, Korea.
authors.forename: Se Hun
authors.initials: SH
authors.lastname: Joo
authors.forename: Suk Man
authors.initials: SM
authors.lastname: Cho
authors.forename: Giyoung
authors.initials: G
authors.lastname: Song
authors.forename: Sung Hwan
authors.initials: SH
authors.lastname: Cho
authors.forename: Beomjin
authors.initials: B
authors.lastname: Jeong
authors.forename: Ihn
authors.initials: I
authors.lastname: Hwang
authors.forename: Jong-Hyun
authors.initials: JH
authors.lastname: Ahn
authors.affiliation: Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute (ETRI) , Daejeon 305-700, Korea.
authors.forename: Young-Jun
authors.initials: YJ
authors.lastname: Yu
authors.affiliation: UNIST Central Research Facilities (UCRF) and School of Natural Science, UNIST 50 UNIST Road, Ulsan 689-798, Korea.
authors.forename: Tae Joo
authors.initials: TJ
authors.lastname: Shin
authors.affiliation: School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 689-798, Korea.
authors.forename: Sang Kyu
authors.initials: SK
authors.lastname: Kwak
authors.affiliation: School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 689-798, Korea.
authors.forename: Seok Ju
authors.initials: SJ
authors.lastname: Kang
authors.forename: Cheolmin
authors.initials: C
authors.lastname: Park
mesh_terms: D004560:Electricity; D004566:Electrodes; D006108:Graphite / Q000737:chemistry*; D011145:Polyvinyls / Q000737:chemistry*; D012666:Semiconductors
chemical_list: D011145:Polyvinyls; C073666:vinylidene fluoride-trifluoroethylene copolymer; D006108:Graphite
keywords: Epitaxial growth; ferroelectric polymer; flexible memory; organic memory; transparent memory