title: High I on/I off current ratio graphene field effect transistor: the role of line defect.
abstract: The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5-8-5 sp(2)-hybridized carbon rings were placed in a perfect graphene sheet. The atomic scale behavior of the transistor was investigated in the non-equilibrium Green's function (NEGF) and tight-binding Hamiltonian frameworks. AGNRFET basic terms such as the on/off current, transconductance and subthreshold swing were investigated along with the extended line defect (ELD). The results indicated that the presence of ELDs had a significant effect on the parameters of the GNRFET. Compared to conventional transistors, the increase of the I on/I off ratio in graphene transistors with ELDs enhances their applicability in digital devices.
authors.affiliation: Department of Electrical Engineering, Tabriz Branch, Islamic Azad University, Tabriz, Iran.
authors.forename: Mohammad Hadi
authors.initials: MH
authors.lastname: Tajarrod
authors.affiliation: Department of Electrical Engineering, Tabriz Branch, Islamic Azad University, Tabriz, Iran.
authors.forename: Hassan Rasooli
authors.initials: HR
authors.lastname: Saghai
keywords: field effect transistor; graphene; line defect