title: Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate.
abstract: The III-V nanowire quantum dots (NWQDs) monolithically grown on silicon substrates, combining the advantages of both one- and zero-dimensional materials, represent one of the most promising technologies for integrating advanced III-V photonic technologies on a silicon microelectronics platform. However, there are great challenges in the fabrication of high-quality III-V NWQDs by a bottom-up approach, that is, growth by the vapor-liquid-solid method, because of the potential contamination caused by external metal catalysts and the various types of interfacial defects introduced by self-catalyzed growth. Here, we report the defect-free self-catalyzed III-V NWQDs, GaAs quantum dots in GaAsP nanowires, on a silicon substrate with pure zinc blende structure for the first time. Well-resolved excitonic emission is observed with a narrow line width. These results pave the way toward on-chip III-V quantum information and photonic devices on silicon platform.
authors.affiliation: Department of Electronic and Electrical Engineering, University College London , Torrington Place, London WC1E 7JE, United Kingdom.
authors.forename: Jiang
authors.initials: J
authors.lastname: Wu
authors.affiliation: Hitachi Cambridge Laboratory, Hitachi Europe Ltd. , Cambridge CB3 0HE, United Kingdom.
authors.forename: Andrew
authors.initials: A
authors.lastname: Ramsay
authors.affiliation: Department of Physics, University of Warwick , Coventry CV4 7AL, United Kingdom.
authors.forename: Ana
authors.initials: A
authors.lastname: Sanchez
authors.affiliation: Department of Electronic and Electrical Engineering, University College London , Torrington Place, London WC1E 7JE, United Kingdom.
authors.forename: Yunyan
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Department of Electronic and Electrical Engineering, University College London , Torrington Place, London WC1E 7JE, United Kingdom.
authors.forename: Dongyoung
authors.initials: D
authors.lastname: Kim
authors.affiliation: Hitachi Cambridge Laboratory, Hitachi Europe Ltd. , Cambridge CB3 0HE, United Kingdom.
authors.forename: Frederic
authors.initials: F
authors.lastname: Brossard
authors.affiliation: Institute for Nanoscience and Engineering, University of Arkansas , Fayetteville, Arkansas 72701, United States.
authors.forename: Xian
authors.initials: X
authors.lastname: Hu
authors.affiliation: Institute for Nanoscience and Engineering, University of Arkansas , Fayetteville, Arkansas 72701, United States.
authors.forename: Mourad
authors.initials: M
authors.lastname: Benamara
authors.affiliation: Institute for Nanoscience and Engineering, University of Arkansas , Fayetteville, Arkansas 72701, United States.
authors.forename: Morgan E
authors.initials: ME
authors.lastname: Ware
authors.affiliation: Institute for Nanoscience and Engineering, University of Arkansas , Fayetteville, Arkansas 72701, United States.
authors.forename: Yuriy I
authors.initials: YI
authors.lastname: Mazur
authors.affiliation: Institute for Nanoscience and Engineering, University of Arkansas , Fayetteville, Arkansas 72701, United States.
authors.forename: Gregory J
authors.initials: GJ
authors.lastname: Salamo
authors.affiliation: Gasp Solar ApS , Gregersensvej 7, Taastrup DK-2630, Denmark.
authors.forename: Martin
authors.initials: M
authors.lastname: Aagesen
authors.affiliation: Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China , Chengdu 610054, People's Republic of China.
authors.forename: Zhiming
authors.initials: Z
authors.lastname: Wang
authors.affiliation: Department of Electronic and Electrical Engineering, University College London , Torrington Place, London WC1E 7JE, United Kingdom.
authors.forename: Huiyun
authors.initials: H
authors.lastname: Liu
keywords: Nanowires; molecular beam epitaxy; quantum dots; self-catalyzed; vapor−liquid−solid