title: Defect-free thin InAs nanowires grown using molecular beam epitaxy.
abstract: In this study, we designed a simple method to achieve the growth of defect-free thin InAs nanowires with a lateral dimension well below their Bohr radius on different substrate orientations. By depositing and annealing a thin layer of Au thin film on a (100) substrate surface, we have achieved the growth of defect-free uniform-sized thin InAs nanowires. This study provides a strategy to achieve the growth of pure defect-free thin nanowires.
authors.affiliation: Materials Engineering, The University of Queensland, St. Lucia, QLD 4072, Australia. j.zou@uq.edu.au.
authors.forename: Zhi
authors.initials: Z
authors.lastname: Zhang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China.
authors.forename: Ping-Ping
authors.initials: PP
authors.lastname: Chen
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Lu
authors.affiliation: Materials Engineering, The University of Queensland, St. Lucia, QLD 4072, Australia. j.zou@uq.edu.au and Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, QLD 4072, Australia.
authors.forename: Jin
authors.initials: J
authors.lastname: Zou