title: A high-quality round-shaped monolayer MoS2 domain and its transformation.
abstract: MoS2 is widely used in many fields including spin-valleytronics, logic transistors, light emitting devices, clean energy and biology. However, controllable synthesis of two-dimensional MoS2 sheets remains a great challenge. We report the formation of round-shaped monolayer MoS2 domains with a tunable size and the shape transformation from triangle to round. A qualitative interpretation of the formation mechanism is presented and the process can be controlled by either a thermodynamic or a kinetic growth regime depending on the growth rate. The round-shaped MoS2 domains show a high electron mobility of 1.39 cm(2) V(-1) s(-1), comparable to the mechanically exfoliated counterparts. Our study reveals the dominant factors that influence the synthesis of MoS2 and improves our understanding of the nucleation and growth mechanisms of MoS2, towards fine control over the synthesis of MoS2 and other TMDs.
authors.affiliation: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China. mxyoung@zju.edu.cn.
authors.forename: Shuang
authors.initials: S
authors.lastname: Xie
authors.affiliation: State Key Laboratory of Silicon Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China. msxu@zju.edu.cn.
authors.forename: Mingsheng
authors.initials: M
authors.lastname: Xu
authors.affiliation: State Key Laboratory of Silicon Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China. msxu@zju.edu.cn.
authors.forename: Tao
authors.initials: T
authors.lastname: Liang
authors.affiliation: State Key Laboratory of Silicon Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China. msxu@zju.edu.cn.
authors.forename: Guowei
authors.initials: G
authors.lastname: Huang
authors.affiliation: State Key Laboratory of Silicon Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China. msxu@zju.edu.cn.
authors.forename: Shengping
authors.initials: S
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Silicon Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China. msxu@zju.edu.cn.
authors.forename: Guobiao
authors.initials: G
authors.lastname: Xue
authors.affiliation: College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China.
authors.forename: Nan
authors.initials: N
authors.lastname: Meng
authors.affiliation: College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Xu
authors.affiliation: State Key Laboratory of Silicon Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China. msxu@zju.edu.cn.
authors.forename: Hongzheng
authors.initials: H
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China. mxyoung@zju.edu.cn.
authors.forename: Xiangyang
authors.initials: X
authors.lastname: Ma
authors.affiliation: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China. mxyoung@zju.edu.cn.
authors.forename: Deren
authors.initials: D
authors.lastname: Yang