title: Cross-sectional atom probe tomography sample preparation for improved analysis of fins on SOI.
abstract: Sample preparation for atom probe tomography of 3D semiconductor devices has proven to significantly affect field evaporation and the reliability of reconstructed data. A cross-sectional preparation method is applied to state-of-the-art Si finFET technology on SOI. This preparation approach advantageously provides a conductive path for voltage and heat, offers analysis of many fins within a single tip, and improves resolution across interfaces of particular interest. Measured B and Ge profiles exhibit good correlation with SIMS and EDX and show no signs of B clustering or pile-up near the Si/SiGe interface of the fin.
authors.affiliation: Advanced Technology Development, GLOBALFOUNDRIES, Inc., Hopewell Junction, NY 12533, United States. Electronic address: andy.martin@globalfoundries.com.
authors.forename: Andrew J
authors.initials: AJ
authors.lastname: Martin
authors.affiliation: Advanced Technology Development, GLOBALFOUNDRIES, Inc., Hopewell Junction, NY 12533, United States.
authors.forename: Weihao
authors.initials: W
authors.lastname: Weng
authors.affiliation: Advanced Technology Development, GLOBALFOUNDRIES, Inc., Hopewell Junction, NY 12533, United States.
authors.forename: Zhengmao
authors.initials: Z
authors.lastname: Zhu
authors.affiliation: Advanced Technology Development, GLOBALFOUNDRIES, Inc., Hopewell Junction, NY 12533, United States.
authors.forename: Rainer
authors.initials: R
authors.lastname: Loesing
authors.affiliation: Advanced Technology Development, GLOBALFOUNDRIES, Inc., Hopewell Junction, NY 12533, United States.
authors.forename: James
authors.initials: J
authors.lastname: Shaffer
authors.affiliation: Advanced Technology Development, GLOBALFOUNDRIES, Inc., Hopewell Junction, NY 12533, United States.
authors.forename: Ahmad
authors.initials: A
authors.lastname: Katnani
keywords: Atom probe tomography; Reconstruction; Silicon on insulator; finFET