title: Direct observation of structural and defect evolution in C-rich SiC using in situ helium ion microscopy.
abstract: The microstructural effects of SiC swelling, mechanisms of He diffusion and aggregation in C-rich SiC are studied using an in situ helium ion microscope. The additive carbon interface provides improved swelling resistance in SiC to ∼270 nm, and defect formation is not observed until very high He implantation doses.
authors.affiliation: Science and Technology on Thermostructural Composite Materials Laboratory, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, China. wangyiguang@nwpu.edu.cn.
authors.forename: Wen
authors.initials: W
authors.lastname: Liu
authors.affiliation: Science and Technology on Thermostructural Composite Materials Laboratory, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, China. wangyiguang@nwpu.edu.cn.
authors.forename: Laifei
authors.initials: L
authors.lastname: Cheng
authors.affiliation: Science and Technology on Thermostructural Composite Materials Laboratory, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, China. wangyiguang@nwpu.edu.cn.
authors.forename: Xiaoqiang
authors.initials: X
authors.lastname: Li
authors.affiliation: Science and Technology on Thermostructural Composite Materials Laboratory, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, China. wangyiguang@nwpu.edu.cn.
authors.forename: Yiguang
authors.initials: Y
authors.lastname: Wang