title: High-efficiency bulk heterojunction memory devices fabricated using organometallic halide perovskite:poly(N-vinylcarbazole) blend active layers.
abstract: A solution-processed organometallic halide perovskite-based bulk heterojunction (BHJ) memory device with a configuration of indium-doped tin oxide (ITO)/CH3NH3PbI3:PVK/Al has been successfully fabricated. Under a threshold voltage of -1.57 V, this device shows a nonvolatile write-once read-many-times (WORM) memory effect, with a maximum ON/OFF current ratio exceeding 10(3). In contrast, the ITO/CH3NH3PbI3/Al device showed only conductor characteristics, while the PVK-based device exhibited insulator behavior. Upon being subjected to voltages, an interesting filamentary nature of the CH3NH3PbI3:PVK film was also observed in situ at the microscopic nanometer level using a conductive atomic force microscopy (C-AFM) technique with a device configuration of Si/Pt/CH3NH3PbI3:PVK/Pt. The mechanism associated with the memory effect is discussed. The electric-field-induced intermolecular charge transfer effect between CH3NH3PbI3 and PVK, and the possible conformational ordering of the PVK side-chains/backbone under an applied bias voltage, may cause the electrical conductivity switching and WORM effect in the reported BHJ device.
authors.affiliation: Key Laboratory for Advanced Materials, School of Chemistry and Molecular Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China. chentangyu@yahoo.com.
authors.forename: Cheng
authors.initials: C
authors.lastname: Wang
authors.affiliation: Key Laboratory for Advanced Materials, School of Chemistry and Molecular Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China. chentangyu@yahoo.com.
authors.forename: Yu
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Key Laboratory for Advanced Materials, School of Chemistry and Molecular Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China. chentangyu@yahoo.com.
authors.forename: Bin
authors.initials: B
authors.lastname: Zhang
authors.affiliation: Key Laboratory for Advanced Materials, School of Chemistry and Molecular Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China. chentangyu@yahoo.com.
authors.forename: Shanshan
authors.initials: S
authors.lastname: Liu
authors.affiliation: Key Laboratory for Advanced Materials, School of Chemistry and Molecular Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China. chentangyu@yahoo.com.
authors.forename: Qibin
authors.initials: Q
authors.lastname: Chen
authors.affiliation: Key Laboratory for Advanced Materials, School of Chemistry and Molecular Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China. chentangyu@yahoo.com.
authors.forename: Yaming
authors.initials: Y
authors.lastname: Cao
authors.affiliation: Key Laboratory for Advanced Materials, School of Chemistry and Molecular Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China. chentangyu@yahoo.com.
authors.forename: Sai
authors.initials: S
authors.lastname: Sun