title: Pressure-induced electronic topological transition in Sb2S3.
abstract: We report the high-pressure vibrational properties and a pressure-induced electronic topological transition in the wide bandgap semiconductor Sb2S3 (E g  =  1.7-1.8 eV) using Raman spectroscopy, resistivity and x-ray diffraction (XRD) studies. In this report, high-pressure Raman spectroscopy and resistivity studies of Sb2S3 have been carried out to 22 GPa and 11 GPa, respectively. We observed the softening of phonon modes [Formula: see text], [Formula: see text] and B 2g and a sharp anomaly in their line widths at 4 GPa. The resistivity studies corroborate this anomaly around similar pressures. The changes in resistivity as well as Raman line widths can be ascribed to the strong phonon-phonon coupling, indicating clear evidence of isostructural electronic topological transition in Sb2S3. The previously reported pressure dependence of a/c ratio plot obtained also showed a minimum at ~5 GPa consistent with our high-pressure Raman and resistivity results.
authors.affiliation: Chemistry and Physics of Materials Unit, JNCASR, Jakkur, Bangalore 560 064, India.
authors.forename: Y A
authors.initials: YA
authors.lastname: Sorb
authors.forename: V
authors.initials: V
authors.lastname: Rajaji
authors.forename: P S
authors.initials: PS
authors.lastname: Malavi
authors.forename: U
authors.initials: U
authors.lastname: Subbarao
authors.forename: P
authors.initials: P
authors.lastname: Halappa
authors.forename: S C
authors.initials: SC
authors.lastname: Peter
authors.forename: S
authors.initials: S
authors.lastname: Karmakar
authors.forename: C
authors.initials: C
authors.lastname: Narayana