title: Large Stokes Shift and High Efficiency Luminescent Solar Concentrator Incorporated with CuInS2/ZnS Quantum Dots.
abstract: Luminescent solar concentrator (LSC) incorporated with quantum dots (QDs) have been widely regarded as one of the most important development trends of cost-effective solar energy. In this study, for the first time we report a new QDs-LSC integrated with heavy metal free CuInS2/ZnS core/shell QDs with large Stokes shift and high optical efficiency. The as-prepared CuInS2/ZnS QDs possess advantages of high photoluminescence quantum yield of 81% and large Stocks shift more than 150 nm. The optical efficiency of CuInS2/ZnS QDs-LSC reaches as high as 26.5%. Moreover, the power conversion efficiency of the QDs-LSC-PV device reaches more than 3 folds to that of pure PMMA-PV device. Furthermore, the PV device is able to harvest 4.91 folds solar energy with the assistance of this new CuInS2/ZnS QDs-LSC for the same size c-Si PV cell. The results demonstrate that this new CuInS2/ZnS QDs-LSC provides a promising way for the high efficiency, nonhazardous and low cost solar energy.
authors.affiliation: Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, 518055, China.
authors.forename: Chen
authors.initials: C
authors.lastname: Li
authors.affiliation: Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, 518055, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Chen
authors.affiliation: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
authors.forename: Dan
authors.initials: D
authors.lastname: Wu
authors.affiliation: Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, 518055, China.
authors.forename: Dunhang
authors.initials: D
authors.lastname: Quan
authors.affiliation: Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, 518055, China.
authors.forename: Ziming
authors.initials: Z
authors.lastname: Zhou
authors.affiliation: Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, 518055, China.
authors.forename: Junjie
authors.initials: J
authors.lastname: Hao
authors.affiliation: Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, 518055, China.
authors.forename: Jing
authors.initials: J
authors.lastname: Qin
authors.affiliation: Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, 518055, China.
authors.forename: Yiwen
authors.initials: Y
authors.lastname: Li
authors.affiliation: Department of Materials Science and Engineering, South University of Science and Technology of China, Shenzhen, 518055, China.
authors.forename: Zhubing
authors.initials: Z
authors.lastname: He
authors.affiliation: Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, 518055, China.|Shenzhen Key Laboratory of 3rd Generation Semiconductor Devices (SUSTC), Shenzhen, 518055, China.
authors.forename: Kai
authors.initials: K
authors.lastname: Wang