title: A low cost, green method to synthesize GaN nanowires.
abstract: The synthesis of gallium nitride nanowires (GaN NWs) by plasma enhanced chemical vapor deposition (PECVD) are successfully demonstrated in this work. The simple and green synthesis route is to introduce gallium oxide (Ga2O3) and nitrogen (N2) for the growth of nanowires. The prepared GaN nanowires have a single crystalline wurtzite structure, which the length of some nanowires is up to 20 μm, with a maximum diameter about 140 nm. The morphology and quantity of the nanowires can be modulated by the growth substrate and process parameters. In addition, the photoluminescence and field emission properties of the prepared GaN nanowires have been investigated, which were found to be largely affected by their structures. This work renders an environmentally benign strategy and a facile approach for controllable structures on nanodevice.
authors.affiliation: College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China.
authors.forename: Jun-Wei
authors.initials: JW
authors.lastname: Zhao
authors.affiliation: Inst. Microstruct. &Property Adv. Mat., Beijing University of Technology, Beijing 100124, China.
authors.forename: Yue-Fei
authors.initials: YF
authors.lastname: Zhang
authors.affiliation: Inst. Microstruct. &Property Adv. Mat., Beijing University of Technology, Beijing 100124, China.
authors.forename: Yong-He
authors.initials: YH
authors.lastname: Li
authors.affiliation: College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China.
authors.forename: Chao-hua
authors.initials: CH
authors.lastname: Su
authors.affiliation: College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China.
authors.forename: Xue-Mei
authors.initials: XM
authors.lastname: Song
authors.affiliation: College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China.
authors.forename: Hui
authors.initials: H
authors.lastname: Yan
authors.affiliation: College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China.
authors.forename: Ru-Zhi
authors.initials: RZ
authors.lastname: Wang