title: Formation of Ideal Rashba States on Layered Semiconductor Surfaces Steered by Strain Engineering.
abstract: Spin splitting of Rashba states in two-dimensional electron system provides a promising mechanism of spin manipulation for spintronics applications. However, Rashba states realized experimentally to date are often outnumbered by spin-degenerated substrate states at the same energy range, hindering their practical applications. Here, by density functional theory calculation, we show that Au one monolayer film deposition on a layered semiconductor surface β-InSe(0001) can possess "ideal" Rashba states with large spin splitting, which are completely situated inside the large band gap of the substrate. The position of the Rashba bands can be tuned over a wide range with respect to the substrate band edges by experimentally accessible strain. Furthermore, our nonequilibrium Green's function transport calculation shows that this system may give rise to the long-sought strong current modulation when made into a device of Datta-Das transistor. Similar systems may be identified with other metal ultrathin films and layered semiconductor substrates to realize ideal Rashba states.
authors.affiliation: Department of Materials Science and Engineering, University of Utah , Salt Lake City, Utah 84112, United States.|Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States.
authors.forename: Wenmei
authors.initials: W
authors.lastname: Ming
authors.affiliation: Department of Materials Science and Engineering, University of Utah , Salt Lake City, Utah 84112, United States.|Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China , Anhui 230026, China.
authors.forename: Z F
authors.initials: ZF
authors.lastname: Wang
authors.affiliation: Department of Materials Science and Engineering, University of Utah , Salt Lake City, Utah 84112, United States.|Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University , Chongqing 400044, China.
authors.forename: Miao
authors.initials: M
authors.lastname: Zhou
authors.affiliation: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States.
authors.forename: Mina
authors.initials: M
authors.lastname: Yoon
authors.affiliation: Department of Materials Science and Engineering, University of Utah , Salt Lake City, Utah 84112, United States.|Collaborative Innovation Center of Quantum Matter , Beijing 100084, China.
authors.forename: Feng
authors.initials: F
authors.lastname: Liu
keywords: Ideal Rashba splitting; heavy metal overlayer; layered semiconductor substrate; spin field transistor; strain