title: Dielectric Spectroscopic Detection of Early Failures in 3-D Integrated Circuits.
abstract: The commercial introduction of three dimensional integrated circuits (3D-ICs) has been hindered by reliability challenges, such as stress related failures, resistivity changes, and unexplained early failures. In this paper, we discuss a new RF-based metrology, based on dielectric spectroscopy, for detecting and characterizing electrically active defects in fully integrated 3D devices. These defects are traceable to the chemistry of the insolation dielectrics used in the through silicon via (TSV) construction. We show that these defects may be responsible for some of the unexplained early reliability failures observed in TSV enabled 3D devices.
authors.affiliation: Engineering Physics Division, Physical Measurement Laboratory, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899.
authors.forename: Yaw
authors.initials: Y
authors.lastname: Obeng
authors.affiliation: Engineering Physics Division, Physical Measurement Laboratory, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899.
authors.forename: C A
authors.initials: CA
authors.lastname: Okoro
authors.affiliation: Engineering Physics Division, Physical Measurement Laboratory, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899.
authors.forename: Jung-Joon
authors.initials: JJ
authors.lastname: Ahn
authors.affiliation: Engineering Physics Division, Physical Measurement Laboratory, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899.
authors.forename: Lin
authors.initials: L
authors.lastname: You
authors.affiliation: Engineering Physics Division, Physical Measurement Laboratory, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899.
authors.forename: Joseph J
authors.initials: JJ
authors.lastname: Kopanski