title: Low-Temperature Selective Growth of Tungsten Oxide Nanowires by Controlled Nanoscale Stress Induction.
abstract: We report a unique approach for the patterned growth of single-crystalline tungsten oxide (WOx) nanowires based on localized stress-induction. Ions implanted into the desired growth area of WOx thin films lead to a local increase in the compressive stress, leading to the growth of nanowire at lower temperatures (600 °C vs. 750-900 °C) than for equivalent non-implanted samples. Nanowires were successfully grown on the microscale patterns using wafer-level ion implantation and on the nanometer scale patterns using a focused ion beam (FIB). Experimental results show that nanowire growth is influenced by a number of factors including the dose of the implanted ions and their atomic radius. The implanted-ion-assisted, stress-induced method proposed here for the patterned growth of WOx nanowires is simpler than alternative approaches and enhances the compatibility of the process by reducing the growth temperature.
authors.affiliation: School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea.
authors.forename: Hyungjoo
authors.initials: H
authors.lastname: Na
authors.affiliation: School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea.
authors.forename: Youngkee
authors.initials: Y
authors.lastname: Eun
authors.affiliation: School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea.
authors.forename: Min-Ook
authors.initials: MO
authors.lastname: Kim
authors.affiliation: School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea.
authors.forename: Jungwook
authors.initials: J
authors.lastname: Choi
authors.affiliation: School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea.
authors.forename: Jongbaeg
authors.initials: J
authors.lastname: Kim