title: Opening the band gap of graphene through silicon doping for the improved performance of graphene/GaAs heterojunction solar cells.
abstract: Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron spectroscopy, was 0.13-0.25 eV larger than that of graphene. Moreover, when compared with the graphene/GaAs heterostructure, SiG/GaAs exhibits an enhanced performance. The performance of 3.4% silicon doped SiG/GaAs solar cell has been improved by 33.7% on average, which was attributed to the increased barrier height and improved interface quality. Our results suggest that silicon doping can effectively engineer the band gap of monolayered graphene and SiG has great potential in optoelectronic device applications.
authors.affiliation: College of Microelectronics, Zhejiang University, Hangzhou, 310027, China and College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China. shishenglin@zju.edu.cn.
authors.forename: S J
authors.initials: SJ
authors.lastname: Zhang
authors.affiliation: College of Microelectronics, Zhejiang University, Hangzhou, 310027, China and College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China. shishenglin@zju.edu.cn.
authors.forename: S S
authors.initials: SS
authors.lastname: Lin
authors.affiliation: College of Microelectronics, Zhejiang University, Hangzhou, 310027, China and College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China. shishenglin@zju.edu.cn.
authors.forename: X Q
authors.initials: XQ
authors.lastname: Li
authors.affiliation: Department of Modern Mechanics, Chinese Academy of Sciences Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei, 230000, China.
authors.forename: X Y
authors.initials: XY
authors.lastname: Liu
authors.affiliation: Department of Modern Mechanics, Chinese Academy of Sciences Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei, 230000, China.
authors.forename: H A
authors.initials: HA
authors.lastname: Wu
authors.affiliation: College of Microelectronics, Zhejiang University, Hangzhou, 310027, China and College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China. shishenglin@zju.edu.cn.
authors.forename: W L
authors.initials: WL
authors.lastname: Xu
authors.affiliation: College of Microelectronics, Zhejiang University, Hangzhou, 310027, China and College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China. shishenglin@zju.edu.cn.
authors.forename: P
authors.initials: P
authors.lastname: Wang
authors.affiliation: College of Microelectronics, Zhejiang University, Hangzhou, 310027, China and College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China. shishenglin@zju.edu.cn.
authors.forename: Z Q
authors.initials: ZQ
authors.lastname: Wu
authors.affiliation: College of Microelectronics, Zhejiang University, Hangzhou, 310027, China and College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China. shishenglin@zju.edu.cn.
authors.forename: H K
authors.initials: HK
authors.lastname: Zhong
authors.affiliation: College of Microelectronics, Zhejiang University, Hangzhou, 310027, China and College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China. shishenglin@zju.edu.cn.
authors.forename: Z J
authors.initials: ZJ
authors.lastname: Xu