title: Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors.
abstract: Resistive switching through electroresistance (ER) effect in metal-ferroelectric-metal (MFM) capacitors has attracted increasing interest due to its potential applications as memories and logic devices. However, the detailed electronic mechanisms resulting in large ER when polarisation switching occurs in the ferroelectric barrier are still not well understood. Here, ER effect up to 1000% at room temperature is demonstrated in C-MOS compatible MFM nanocapacitors with a 8.8 nm-thick poly(vinylidene fluoride) (PVDF) homopolymer ferroelectric, which is very promising for silicon industry integration. Most remarkably, using theory developed for metal-semiconductor rectifying contacts, we derive an analytical expression for the variation of interfacial barrier heights due to space-charge effect that can interpret the observed ER response. We extend this space-charge model, related to the release of trapped charges by defects, to MFM structures made of ferroelectric oxides. This space-charge model provides a simple and straightforward tool to understand recent unusual reports. Finally, this work suggests that defect-engineering could be an original and efficient route for tuning the space-charge effect and thus the ER performances in future electronic devices.
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.|University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, China.|Laboratoire Structures, Propriétés et Modélisation des Solides, CentraleSupélec, CNRS-UMR8580, Université Paris-Saclay, Châtenay-Malabry Cedex 92295, France.
authors.forename: Bo Bo
authors.initials: BB
authors.lastname: Tian
authors.affiliation: Laboratoire Structures, Propriétés et Modélisation des Solides, CentraleSupélec, CNRS-UMR8580, Université Paris-Saclay, Châtenay-Malabry Cedex 92295, France.
authors.forename: Yang
authors.initials: Y
authors.lastname: Liu
authors.affiliation: School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
authors.forename: Liu Fang
authors.initials: LF
authors.lastname: Chen
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.|University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, China.
authors.forename: Jian Lu
authors.initials: JL
authors.lastname: Wang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.|University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, China.
authors.forename: Shuo
authors.initials: S
authors.lastname: Sun
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.|University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, China.
authors.forename: Hong
authors.initials: H
authors.lastname: Shen
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.|University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, China.
authors.forename: Jing Lan
authors.initials: JL
authors.lastname: Sun
authors.affiliation: School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
authors.forename: Guo Liang
authors.initials: GL
authors.lastname: Yuan
authors.affiliation: Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France.
authors.forename: Stéphane
authors.initials: S
authors.lastname: Fusil
authors.affiliation: Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767, Palaiseau, France.
authors.forename: Vincent
authors.initials: V
authors.lastname: Garcia
authors.affiliation: Laboratoire Structures, Propriétés et Modélisation des Solides, CentraleSupélec, CNRS-UMR8580, Université Paris-Saclay, Châtenay-Malabry Cedex 92295, France.
authors.forename: Brahim
authors.initials: B
authors.lastname: Dkhil
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.|University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, China.
authors.forename: Xiang Jian
authors.initials: XJ
authors.lastname: Meng
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.|University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, China.
authors.forename: Jun Hao
authors.initials: JH
authors.lastname: Chu