title: Design of a Photoactive Hybrid Bilayer Dielectric for Flexible Nonvolatile Organic Memory Transistors.
abstract: Organic field-effect transistors (OFETs) featuring a photoactive hybrid bilayer dielectric (PHBD) that comprises a self-assembled monolayer (SAM) of photochromic diarylethenes (DAEs) and an ultrathin solution-processed hafnium oxide layer are described here. We photoengineer the energy levels of DAE SAMs to facilitate the charging and discharging of the interface of the two dielectrics, thus yielding an OFET that functions as a nonvolatile memory device. The transistors use light signals for programming and electrical signals for erasing (≤3 V) to produce a large, reversible threshold-voltage shift with long retention times and good nondestructive signal processing ability. The memory effect can be exercised by more than 10(4) memory cycles. Furthermore, these memory cells have demonstrated the capacity to be arrayed into a photosensor matrix on flexible plastic substrates to detect the spatial distribution of a confined light and then store the analog sensor input as a two-dimensional image with high precision over a long period of time.
authors.affiliation: Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, People's Republic of China.
authors.forename: Hongliang
authors.initials: H
authors.lastname: Chen
authors.affiliation: Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, People's Republic of China.
authors.forename: Nongyi
authors.initials: N
authors.lastname: Cheng
authors.affiliation: Institute of Physics, Chinese Academy of Sciences , Beijing 100190, People's Republic of China.
authors.forename: Wei
authors.initials: W
authors.lastname: Ma
authors.affiliation: Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, People's Republic of China.
authors.forename: Mingliang
authors.initials: M
authors.lastname: Li
authors.affiliation: Institute of Physics, Chinese Academy of Sciences , Beijing 100190, People's Republic of China.
authors.forename: Shuxin
authors.initials: S
authors.lastname: Hu
authors.affiliation: Institute of Physics, Chinese Academy of Sciences , Beijing 100190, People's Republic of China.
authors.forename: Lin
authors.initials: L
authors.lastname: Gu
authors.affiliation: Institute of Physics, Chinese Academy of Sciences , Beijing 100190, People's Republic of China.
authors.forename: Sheng
authors.initials: S
authors.lastname: Meng
authors.affiliation: Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, People's Republic of China.|Department of Materials Science and Engineering, College of Engineering, Peking University , Beijing 100871, People's Republic of China.
authors.forename: Xuefeng
authors.initials: X
authors.lastname: Guo
keywords: diarylethene; flexible nonvolatile memory; organic field-effect transistor; photoactive hybrid dielectric; self-assembled monolayer