title: Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure.
abstract: There is significant interest in synthesizing large-area graphene films at low temperatures by chemical vapor deposition (CVD) for nanoelectronic and flexible device applications. However, to date, low-temperature CVD methods have suffered from lower surface coverage because micro-sized graphene flakes are produced. Here, we demonstrate a modified CVD technique for the production of large-area, continuous monolayer graphene films from benzene on Cu at 100-300 °C at ambient pressure. In this method, we extended the graphene growth step in the absence of residual oxidizing species by introducing pumping and purging cycles prior to growth. This led to continuous monolayer graphene films with full surface coverage and excellent quality, which were comparable to those achieved with high-temperature CVD; for example, the surface coverage, transmittance, and carrier mobilities of the graphene grown at 300 °C were 100%, 97.6%, and 1,900-2,500 cm(2) V(-1) s(-1), respectively. In addition, the growth temperature was substantially reduced to as low as 100 °C, which is the lowest temperature reported to date for pristine graphene produced by CVD. Our modified CVD method is expected to allow the direct growth of graphene in device manufacturing processes for practical applications while keeping underlying devices intact.
authors.affiliation: Center for Emerging Electronic Devices and Systems, Department of Nanobio Materials and Electronics, School of Materials Science and Engineering, Gwangju Institute of Science &Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea.
authors.forename: Jisu
authors.initials: J
authors.lastname: Jang
authors.affiliation: Center for Emerging Electronic Devices and Systems, Department of Nanobio Materials and Electronics, School of Materials Science and Engineering, Gwangju Institute of Science &Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea.
authors.forename: Myungwoo
authors.initials: M
authors.lastname: Son
authors.affiliation: Center for Emerging Electronic Devices and Systems, Department of Nanobio Materials and Electronics, School of Materials Science and Engineering, Gwangju Institute of Science &Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea.
authors.forename: Sunki
authors.initials: S
authors.lastname: Chung
authors.affiliation: Center for Emerging Electronic Devices and Systems, Department of Nanobio Materials and Electronics, School of Materials Science and Engineering, Gwangju Institute of Science &Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea.
authors.forename: Kihyeun
authors.initials: K
authors.lastname: Kim
authors.affiliation: Center for Emerging Electronic Devices and Systems, Department of Nanobio Materials and Electronics, School of Materials Science and Engineering, Gwangju Institute of Science &Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea.
authors.forename: Chunhum
authors.initials: C
authors.lastname: Cho
authors.affiliation: Center for Emerging Electronic Devices and Systems, Department of Nanobio Materials and Electronics, School of Materials Science and Engineering, Gwangju Institute of Science &Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea.
authors.forename: Byoung Hun
authors.initials: BH
authors.lastname: Lee
authors.affiliation: Center for Emerging Electronic Devices and Systems, Department of Nanobio Materials and Electronics, School of Materials Science and Engineering, Gwangju Institute of Science &Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea.
authors.forename: Moon-Ho
authors.initials: MH
authors.lastname: Ham