title: Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors.
abstract: Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10(-10) S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Chao
authors.initials: C
authors.lastname: Wang
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.|Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei 106, Taiwan (ROC).
authors.forename: Wen-Ya
authors.initials: WY
authors.lastname: Lee
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Desheng
authors.initials: D
authors.lastname: Kong
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.|Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), and Networking Research Center on Bioengineering, Biomaterials and Nanomedicine (CIBER-BBN), Campus UAB, 08193 Bellaterra, Spain.
authors.forename: Raphael
authors.initials: R
authors.lastname: Pfattner
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Guillaume
authors.initials: G
authors.lastname: Schweicher
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Reina
authors.initials: R
authors.lastname: Nakajima
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Chien
authors.initials: C
authors.lastname: Lu
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Jianguo
authors.initials: J
authors.lastname: Mei
authors.affiliation: Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Tae Hoon
authors.initials: TH
authors.lastname: Lee
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Hung-Chin
authors.initials: HC
authors.lastname: Wu
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Jeffery
authors.initials: J
authors.lastname: Lopez
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Ying
authors.initials: Y
authors.lastname: Diao
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Xiaodan
authors.initials: X
authors.lastname: Gu
authors.affiliation: Department of Material Sciences &Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Scott
authors.initials: S
authors.lastname: Himmelberger
authors.affiliation: Corning Incorporated, SP-FR-06-1, Corning, NY 14831, USA.
authors.forename: Weijun
authors.initials: W
authors.lastname: Niu
authors.affiliation: Corning Incorporated, SP-FR-06-1, Corning, NY 14831, USA.
authors.forename: James R
authors.initials: JR
authors.lastname: Matthews
authors.affiliation: Corning Incorporated, SP-FR-06-1, Corning, NY 14831, USA.
authors.forename: Mingqian
authors.initials: M
authors.lastname: He
authors.affiliation: Department of Material Sciences &Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Alberto
authors.initials: A
authors.lastname: Salleo
authors.affiliation: Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Nishi
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Zhenan
authors.initials: Z
authors.lastname: Bao