title: Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities.
abstract: Optoelectronic applications require materials both responsive to objective photons and able to transfer carriers, so new two-dimensional (2D) semiconductors with appropriate band gaps and high mobilities are highly desired. A broad range of band gaps and high mobilities of a 2D semiconductor family, composed of monolayer of Group 15 elements (phosphorene, arsenene, antimonene, bismuthene) is presented. The calculated binding energies and phonon band dispersions of 2D Group 15 allotropes exhibit thermodynamic stability. The energy band gaps of 2D semiconducting Group 15 monolayers cover a wide range from 0.36 to 2.62 eV, which are crucial for broadband photoresponse. Significantly, phosphorene, arsenene, and bismuthene possess carrier mobilities as high as several thousand cm(2)  V(-1)  s(-1) . Combining such broad band gaps and superior carrier mobilities, 2D Group 15 monolayers are promising candidates for nanoelectronics and optoelectronics.
authors.affiliation: Institute of Optoelectronics & Nanomaterials, Jiangsu Ke, Laboratory of Advanced Micro & Nano Materials and Technology, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
authors.forename: Shengli
authors.initials: S
authors.lastname: Zhang
authors.affiliation: Institute of Optoelectronics & Nanomaterials, Jiangsu Ke, Laboratory of Advanced Micro & Nano Materials and Technology, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
authors.forename: Meiqiu
authors.initials: M
authors.lastname: Xie
authors.affiliation: Department of Chemistry, Institute for Functional Nanomaterials, University of Puerto Rico, Rio Piedras, San Juan, PR, 00931, USA.
authors.forename: Fengyu
authors.initials: F
authors.lastname: Li
authors.affiliation: Institute of Optoelectronics & Nanomaterials, Jiangsu Ke, Laboratory of Advanced Micro & Nano Materials and Technology, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
authors.forename: Zhong
authors.initials: Z
authors.lastname: Yan
authors.affiliation: College of Chemistry and Materials Science, Jiangsu Key Laboratory of Biofunctional Materials, Nanjing Normal University, Nanjing, 210023, China.
authors.forename: Yafei
authors.initials: Y
authors.lastname: Li
authors.affiliation: Institute of Optoelectronics & Nanomaterials, Jiangsu Ke, Laboratory of Advanced Micro & Nano Materials and Technology, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
authors.forename: Erjun
authors.initials: E
authors.lastname: Kan
authors.affiliation: Institute of Optoelectronics & Nanomaterials, Jiangsu Ke, Laboratory of Advanced Micro & Nano Materials and Technology, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Liu
authors.affiliation: Department of Chemistry, Institute for Functional Nanomaterials, University of Puerto Rico, Rio Piedras, San Juan, PR, 00931, USA.
authors.forename: Zhongfang
authors.initials: Z
authors.lastname: Chen
authors.affiliation: Institute of Optoelectronics & Nanomaterials, Jiangsu Ke, Laboratory of Advanced Micro & Nano Materials and Technology, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China. zeng.haibo@njust.edu.cn.
authors.forename: Haibo
authors.identifier: http://orcid.org/0000-0002-0260-1059
authors.initials: H
authors.lastname: Zeng
keywords: 2D semiconductors; Group 15 monolayers; broadband photoresponse; density functional calculations; high mobility