title: Structural coupling across the direct EuO/Si interface.
abstract: The ferromagnetic semiconductor EuO is believed to be an effective spin injector when directly integrated with silicon (Si). Injection through spin-selective ohmic contact requires superb structural quality of the interface EuO/Si. A recent breakthrough in manufacturing free-of-buffer-layer EuO/Si junctions calls for structural studies of the interface between the semiconductors. The synthesis of EuO employs an advanced protection of the Si substrate surface and a two-step growth protocol. It prevents unwanted chemical reactions at the interface. Ex situ high-resolution x-ray diffraction (XRD) and reflectivity (XRR) accompanied by in situ reflection high-energy electron diffraction reveal direct coupling at the interface. A combined analysis of XRD and XRR data provides a common structural model. The structural quality of the EuO/Si spin contact far exceeds that of previous reports and thus makes a step forward to the ultimate goals of spintronics.
authors.affiliation: National Research Center 'Kurchatov Institute', Kurchatov Sq. 1, Moscow 123182, Russia.
authors.forename: Dmitry V
authors.initials: DV
authors.lastname: Averyanov
authors.forename: Andrey M
authors.initials: AM
authors.lastname: Tokmachev
authors.forename: Igor A
authors.initials: IA
authors.lastname: Likhachev
authors.forename: Eduard F
authors.initials: EF
authors.lastname: Lobanovich
authors.forename: Oleg E
authors.initials: OE
authors.lastname: Parfenov
authors.forename: Elkhan M
authors.initials: EM
authors.lastname: Pashaev
authors.forename: Yuri G
authors.initials: YG
authors.lastname: Sadofyev
authors.forename: Ilia A
authors.initials: IA
authors.lastname: Subbotin
authors.forename: Sergey N
authors.initials: SN
authors.lastname: Yakunin
authors.forename: Vyacheslav G
authors.initials: VG
authors.lastname: Storchak