title: The development of two dimensional group IV chalcogenides, blocks for van der Waals heterostructures.
abstract: In this work, we introduce a series of two dimensional (2D) group IV chalcogenides (AX)2 with the building block X-A-A-X (A = Si, Ge, Sn, and Pb, and X = Se and Te) on the basis of ab initio calculations. The analysis of energy evaluation, lattice vibration as well as the chemical bonding demonstrate the good stability of these 2D materials. Furthermore, the pictures for the chemical bonding and electronic features of the 2D (AX)2 are drawn. Their narrow gapped semiconducting nature is unraveled. Especially, strong interactions between the electrons and phonons as well as the topological insulating nature in (SiTe)2 are observed. The present results indicate that such remarkable artificial 2D (AX)2 are building blocks for van der Waals heterostructure engineering, which shows potential applications in nanoscaled electronics and optoelectronics.
authors.affiliation: College of Materials Science and Engineering, Fuzhou University, and Key Laboratory of Eco-materials Advanced Technology (Fuzhou University), Fujian Province University, 350108, Fuzhou, People's Republic of China.
authors.forename: Baisheng
authors.initials: B
authors.lastname: Sa
authors.affiliation: School of Materials Science and Engineering, and Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, 100191, Beijing, People's Republic of China. zmsun@buaa.edu.cn.
authors.forename: Zhimei
authors.initials: Z
authors.lastname: Sun
authors.affiliation: College of Materials Science and Engineering, Fuzhou University, and Key Laboratory of Eco-materials Advanced Technology (Fuzhou University), Fujian Province University, 350108, Fuzhou, People's Republic of China.
authors.forename: Bo
authors.initials: B
authors.lastname: Wu