title: Strain induced topological phase transitions in monolayer honeycomb structures of group-V binary compounds.
abstract: We present first-principles calculations of electronic structures of a class of two-dimensional (2D) honeycomb structures of group-V binary compounds. Our results show these new 2D materials are stable semiconductors with direct or indirect band gaps. The band gap can be tuned by applying lattice strain. During their stretchable regime, they all exhibit metal-indirect gap semiconductor-direct gap semiconductor-topological insulator (TI) transitions with increasing strain from negative (compressive) to positive (tensile) values. The topological phase transition results from the band inversion at the Γ point which is due to the evolution of bonding and anti-bonding states under lattice strain.
authors.affiliation: School of Physics and Electronics, Central South University, Changsha, 410083 China.
authors.forename: Yaozhuang
authors.initials: Y
authors.lastname: Nie
authors.affiliation: School of Physics and Electronics, Central South University, Changsha, 410083 China.
authors.forename: Mavlanjan
authors.initials: M
authors.lastname: Rahman
authors.affiliation: School of Physics and Electronics, Central South University, Changsha, 410083 China.
authors.forename: Daowei
authors.initials: D
authors.lastname: Wang
authors.affiliation: School of Physics and Electronics, Central South University, Changsha, 410083 China.
authors.forename: Can
authors.initials: C
authors.lastname: Wang
authors.affiliation: School of Physics and Electronics, Central South University, Changsha, 410083 China.
authors.forename: Guanghua
authors.initials: G
authors.lastname: Guo