title: Quantitative Analysis of Scattering Mechanisms in Highly Crystalline CVD MoS2 through a Self-Limited Growth Strategy by Interface Engineering.
abstract: The electrical performance of highly crystalline monolayer MoS2 is remarkably enhanced by a self-limited growth strategy on octadecyltrimethoxysilane self-assembled monolayer modified SiO2 /Si substrates. The scattering mechanisms in low-κ dielectric, including the dominant charged impurities, acoustic deformation potentials, optical deformation potentials), Fröhlich interaction, and the remote interface phonon interaction in dielectrics, are quantitatively analyzed.
authors.affiliation: Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N. T., Hong Kong SAR, 999077, P. R. China.
authors.forename: Xi
authors.initials: X
authors.lastname: Wan
authors.affiliation: Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N. T., Hong Kong SAR, 999077, P. R. China.
authors.forename: Kun
authors.initials: K
authors.lastname: Chen
authors.affiliation: Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China.
authors.forename: Weiguang
authors.initials: W
authors.lastname: Xie
authors.affiliation: School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, Guangdong, 510275, P. R. China.
authors.forename: Jinxiu
authors.initials: J
authors.lastname: Wen
authors.affiliation: School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, Guangdong, 510275, P. R. China.
authors.forename: Huanjun
authors.initials: H
authors.lastname: Chen
authors.affiliation: Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N. T., Hong Kong SAR, 999077, P. R. China.
authors.forename: Jian-Bin
authors.initials: JB
authors.lastname: Xu
keywords: MoS2; OTMS; charged impurities; scattering; self-limited growth