title: InN-based heterojunction photodetector with extended infrared response.
abstract: The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two non-radiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.
authors.forename: Lung-Hsing
authors.initials: LH
authors.lastname: Hsu
authors.forename: Chien-Ting
authors.initials: CT
authors.lastname: Kuo
authors.forename: Jhih-Kai
authors.initials: JK
authors.lastname: Huang
authors.forename: Shun-Chieh
authors.initials: SC
authors.lastname: Hsu
authors.forename: Hsin-Ying
authors.initials: HY
authors.lastname: Lee
authors.forename: Hao-Chung
authors.initials: HC
authors.lastname: Kuo
authors.forename: Po-Tsung
authors.initials: PT
authors.lastname: Lee
authors.forename: Yu-Lin
authors.initials: YL
authors.lastname: Tsai
authors.forename: Yi-Chia
authors.initials: YC
authors.lastname: Hwang
authors.forename: Chen-Feng
authors.initials: CF
authors.lastname: Su
authors.forename: Jr-Hau
authors.initials: JH
authors.lastname: He
authors.forename: Shih-Yen
authors.initials: SY
authors.lastname: Lin
authors.forename: Yuh-Jen
authors.initials: YJ
authors.lastname: Cheng
authors.forename: Chien-Chung
authors.initials: CC
authors.lastname: Lin