title: Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid Structure.
abstract: Two-dimensional (2D) molybdenum disulfide (MoS2) is an exciting material due to its unique electrical, optical, and piezoelectric properties. Owing to an intrinsic band gap of 1.2-1.9 eV, monolayer or a-few-layer MoS2 is used for fabricating field effect transistors (FETs) with high electron mobility and on/off ratio. However, the traditional FETs are controlled by an externally supplied gate voltage, which may not be sensitive enough to directly interface with a mechanical stimulus for applications in electronic skin. Here we report a type of top-pressure/force-gated field effect transistors (PGFETs) based on a hybrid structure of a 2D MoS2 flake and 1D ZnO nanowire (NW) array. Once an external pressure is applied, the piezoelectric polarization charges created at the tips of ZnO NWs grown on MoS2 act as a gate voltage to tune/control the source-drain transport property in MoS2. At a 6.25 MPa applied stimulus on a packaged device, the source-drain current can be tuned for ∼25%, equivalent to the results of applying an extra -5 V back gate voltage. Another type of PGFET with a dielectric layer (Al2O3) sandwiched between MoS2 and ZnO also shows consistent results. A theoretical model is proposed to interpret the received data. This study sets the foundation for applying the 2D material-based FETs in the field of artificial intelligence.
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing, 100083, China.
authors.forename: Libo
authors.initials: L
authors.lastname: Chen
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing, 100083, China.
authors.forename: Fei
authors.initials: F
authors.lastname: Xue
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing, 100083, China.
authors.forename: Xiaohui
authors.initials: X
authors.lastname: Li
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing, 100083, China.
authors.forename: Xin
authors.initials: X
authors.lastname: Huang
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing, 100083, China.
authors.forename: Longfei
authors.initials: L
authors.lastname: Wang
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing, 100083, China.
authors.forename: Jinzong
authors.initials: J
authors.lastname: Kou
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing, 100083, China.|School of Material Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332, United States.
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang
keywords: MoS2; ZnO; field effect transistors; piezotronic effect; strain/pressure