title: Controllable Growth of Large-Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film.
abstract: Two-dimensional MoS2 is a promising material for future nanoelectronics and optoelectronics. It has remained a great challenge to grow large-size crystalline and high surface coverage monolayer MoS2. In this work, we investigate the controllable growth of monolayer MoS2 evolving from triangular flakes to continuous thin films by optimizing the concentration of gaseous MoS2, which has been shown a both thermodynamic and kinetic growth factor. A single-crystal monolayer MoS2 larger than 300 μm was successfully grown by suppressing the nuclei density and supplying sufficient source. Furthermore, we present a facile process of transferring the centimeter scale MoS2 assisted with a copper thin film. Our results show the absence of observable residues or wrinkles after we transfer MoS2 from the growth substrates onto flat substrates using this technique, which can be further extended to transfer other two-dimensional layered materials.
authors.affiliation: Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China.
authors.forename: Ziyuan
authors.initials: Z
authors.lastname: Lin
authors.affiliation: Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China.
authors.forename: Yuda
authors.initials: Y
authors.lastname: Zhao
authors.affiliation: Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China.
authors.forename: Changjian
authors.initials: C
authors.lastname: Zhou
authors.affiliation: Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China.
authors.forename: Ren
authors.initials: R
authors.lastname: Zhong
authors.affiliation: Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China.
authors.forename: Xinsheng
authors.initials: X
authors.lastname: Wang
authors.affiliation: Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China.
authors.forename: Yuen Hong
authors.initials: YH
authors.lastname: Tsang
authors.affiliation: Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China.|The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, People's Republic of China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Chai