title: From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires.
abstract: III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as InAs and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, and composition are key to the control of their physical properties. In this work, we present how to grow catalyst-free InAs1-xSbx nanowires, which are stacking fault and twin defect-free over several hundreds of nanometers. We evaluate the impact of their crystal phase purity by probing their electrical properties in a transistor-like configuration and by measuring the phonon-plasmon interaction by Raman spectroscopy. We also highlight the importance of high-quality dielectric coating for the reduction of hysteresis in the electrical characteristics of the nanowire transistors. High channel carrier mobilities and reduced hysteresis open the path for high-frequency devices fabricated using InAs1-xSbx nanowires.
authors.affiliation: Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland.
authors.forename: Heidi
authors.initials: H
authors.lastname: Potts
authors.affiliation: Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland.
authors.forename: Martin
authors.initials: M
authors.lastname: Friedl
authors.affiliation: Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland.
authors.forename: Francesca
authors.initials: F
authors.lastname: Amaduzzi
authors.affiliation: Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States.
authors.forename: Kechao
authors.initials: K
authors.lastname: Tang
authors.affiliation: Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland.
authors.forename: Gözde
authors.initials: G
authors.lastname: Tütüncüoglu
authors.affiliation: Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland.
authors.forename: Federico
authors.initials: F
authors.lastname: Matteini
authors.affiliation: Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland.
authors.forename: Esther
authors.initials: E
authors.lastname: Alarcon Lladó
authors.affiliation: Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States.
authors.forename: Paul C
authors.initials: PC
authors.lastname: McIntyre
authors.affiliation: Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland.
authors.forename: Anna
authors.initials: A
authors.lastname: Fontcuberta i Morral
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D002384:Catalysis; D004583:Electrons; D007204:Indium / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology; D053770:Nanowires / Q000737:chemistry*; D012666:Semiconductors; D013499:Surface Properties
chemical_list: D001152:Arsenicals; D007204:Indium; C076773:indium arsenide
keywords: InAs nanowires; InAsSb; atomic layer deposition; catalyst-free; crystal structure; electronic properties; mobility; molecular beam epitaxy; phonon−plasmon interaction; self-catalyzed; surface passivation