title: High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.
abstract: The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.
authors.affiliation: Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan.
authors.forename: Mami N
authors.initials: MN
authors.lastname: Fujii
authors.affiliation: Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan.
authors.forename: Yasuaki
authors.initials: Y
authors.lastname: Ishikawa
authors.affiliation: Central Research Institute of Electric Power Industry 2-11-2, Iwado-kita, Komae, Tokyo 201-8511, Japan.
authors.forename: Kazumoto
authors.initials: K
authors.lastname: Miwa
authors.affiliation: Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan.
authors.forename: Hiromi
authors.initials: H
authors.lastname: Okada
authors.affiliation: Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan.
authors.forename: Yukiharu
authors.initials: Y
authors.lastname: Uraoka
authors.affiliation: Central Research Institute of Electric Power Industry 2-11-2, Iwado-kita, Komae, Tokyo 201-8511, Japan.
authors.forename: Shimpei
authors.initials: S
authors.lastname: Ono