title: The effect of magnetic field on chiral transmission in p-n-p graphene junctions.
abstract: We investigate Klein tunneling in graphene heterojunctions under the influence of a perpendicular magnetic field via the non-equilibrium Green's function method. We find that the angular dependence of electron transmission is deflected sideways, resulting in the suppression of normally incident electrons and overall decrease in conductance. The off-normal symmetry axis of the transmission profile was analytically derived. Overall tunneling conductance decreases to almost zero regardless of the potential barrier height V0 when the magnetic field (B-field) exceeds a critical value, thus achieving effective confinement of Dirac fermions. The critical field occurs when the width of the magnetic field region matches the diameter of the cyclotron orbit. The potential barrier also induces distinct Fabry-Pérot fringe patterns, with a "constriction region" of low transmission when V0 is close to the Fermi energy. Application of B-field deflects the Fabry-Pérot interference pattern to an off-normal angle. Thus, the conductance of the graphene heterojunctions can be sharply modulated by adjusting the B-field strength and the potential barrier height relative to the Fermi energy.
authors.affiliation: Department of Physics, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Li
authors.affiliation: Department of Physics, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China.
authors.forename: Qi
authors.initials: Q
authors.lastname: Wan
authors.affiliation: Department of Physics, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China.
authors.forename: Yingzi
authors.initials: Y
authors.lastname: Peng
authors.affiliation: Department of Physics, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China.
authors.forename: Guanqing
authors.initials: G
authors.lastname: Wang
authors.affiliation: Center for Integrated Spintronic Devices (CISD), Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China.
authors.forename: Zhenghong
authors.initials: Z
authors.lastname: Qian
authors.affiliation: Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Hunan Normal University, Changsha 410081, China.
authors.forename: Guanghui
authors.initials: G
authors.lastname: Zhou
authors.affiliation: Computational Nanoelectronics and Nano-device Laboratory, Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore.
authors.forename: Mansoor B A
authors.initials: MBA
authors.lastname: Jalil