title: Nanostructured Anodic Multilayer Dielectric Stacked Metal-Insulator-Metal Capacitors.
abstract: This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal-insulator-metal (MIM) capacitor using anodization technique. High capacitance density of > 3.5 fF/μm2, low quadratic voltage coefficient of capacitance of < 115 ppm/V2 and a low leakage current density of 4.457 x 10(-11) A/cm2 at 3 V are achieved which are suitable for analog and mixed signal applications. We found that the anodization voltage played a major role in electrical and structural properties of the thin film. This work suggests that the anodization method can offer crystalline multilayer dielectric stack required for high performance MIM capacitor.
authors.forename: R
authors.initials: R
authors.lastname: Karthik
authors.forename: D
authors.initials: D
authors.lastname: Kannadassan
authors.forename: Maryam Shojaei
authors.initials: MS
authors.lastname: Baghini
authors.forename: P S
authors.initials: PS
authors.lastname: Mallick