title: Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature.
abstract: The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which gives rises to much stronger enhancement, has proven to be more difficult to achieve because of the rapid nonradiative surface/interface recombination in hybrid dielectric-semiconductor structures. Here, we demonstrate intense excitonic emission from bare GaN nanowires with diameters down to 6 nm. The large dielectric mismatch between the nanowires and vacuum greatly enhances the Coulomb interaction, with the thinnest nanowires showing the strongest dielectric confinement and the highest radiative efficiency at room temperature. In situ monitoring of the fabrication of these structures allows one to accurately control the degree of dielectric enhancement. These ultrathin nanowires may constitute the basis for the fabrication of advanced low-dimensional structures with an unprecedented degree of confinement.
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany.
authors.forename: Johannes K
authors.initials: JK
authors.lastname: Zettler
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany.
authors.forename: Pierre
authors.initials: P
authors.lastname: Corfdir
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany.
authors.forename: Christian
authors.initials: C
authors.lastname: Hauswald
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany.
authors.forename: Esperanza
authors.initials: E
authors.lastname: Luna
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany.
authors.forename: Uwe
authors.initials: U
authors.lastname: Jahn
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany.
authors.forename: Timur
authors.initials: T
authors.lastname: Flissikowski
authors.affiliation: Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena , Max-Wien-Platz 1, 07743 Jena, Germany.
authors.forename: Emanuel
authors.initials: E
authors.lastname: Schmidt
authors.affiliation: Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena , Max-Wien-Platz 1, 07743 Jena, Germany.
authors.forename: Carsten
authors.initials: C
authors.lastname: Ronning
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany.
authors.forename: Achim
authors.initials: A
authors.lastname: Trampert
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany.
authors.forename: Lutz
authors.initials: L
authors.lastname: Geelhaar
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany.
authors.forename: Holger T
authors.initials: HT
authors.lastname: Grahn
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany.
authors.forename: Oliver
authors.initials: O
authors.lastname: Brandt
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany.
authors.forename: Sergio
authors.initials: S
authors.lastname: Fernández-Garrido
keywords: GaN nanowires; dielectric confinement; excitons; thermal decomposition