title: Support-Free Transfer of Ultrasmooth Graphene Films Facilitated by Self-Assembled Monolayers for Electronic Devices and Patterns.
abstract: We explored a support-free method for transferring large area graphene films grown by chemical vapor deposition to various fluoric self-assembled monolayer (F-SAM) modified substrates including SiO2/Si wafers, polyethylene terephthalate films, and glass. This method yields clean, ultrasmooth, and high-quality graphene films for promising applications such as transparent, conductive, and flexible films due to the absence of residues and limited structural defects such as cracks. The F-SAM introduced in the transfer process can also lead to graphene transistors with enhanced field-effect mobility (up to 10,663 cm(2)/Vs) and resistance modulation (up to 12×) on a standard silicon dioxide dielectric. Clean graphene patterns can be realized by transfer of graphene onto only the F-SAM modified surfaces.
authors.affiliation: Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 689-798, Republic of Korea.
authors.forename: Bin
authors.initials: B
authors.lastname: Wang
authors.affiliation: Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 689-798, Republic of Korea.
authors.forename: Ming
authors.initials: M
authors.lastname: Huang
authors.affiliation: Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas , Austin, Texas 78758, United States.
authors.forename: Li
authors.initials: L
authors.lastname: Tao
authors.affiliation: Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 689-798, Republic of Korea.
authors.forename: Sun Hwa
authors.initials: SH
authors.lastname: Lee
authors.forename: A-Rang
authors.initials: AR
authors.lastname: Jang
authors.affiliation: Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 689-798, Republic of Korea.
authors.forename: Bao-Wen
authors.initials: BW
authors.lastname: Li
authors.forename: Hyeon Suk
authors.initials: HS
authors.lastname: Shin
authors.affiliation: Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas , Austin, Texas 78758, United States.
authors.forename: Deji
authors.initials: D
authors.lastname: Akinwande
authors.affiliation: Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 689-798, Republic of Korea.
authors.forename: Rodney S
authors.initials: RS
authors.lastname: Ruoff
keywords: GFET; graphene; pattern; self-assembled monolayer; support-free; transfer; ultrasmooth