title: Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure.
abstract: We discovered a family of uniaxially oriented silicon vacancy-related centers with S=3/2 in a rhombic 15R-SiC crystalline matrix. We demonstrate that these centers exhibit unique characteristics such as optical spin alignment up to the temperatures of 250°C. Thus, the range of robust optically addressable vacancy-related spin centers is extended to the wide class of rhombic SiC polytypes. To use these centers for quantum applications it is essential to know their structure. Using high frequency electron nuclear double resonance, we show that the centers are formed by negatively charged silicon vacancies V_{Si}^{-} in the paramagnetic state with S=3/2 that is noncovalently bonded to the neutral carbon vacancy V_{C}^{0} in the nonparamagnetic state, located on the adjacent site along the SiC symmetry c axis.
authors.affiliation: Ioffe Physical Technical Institute, St. Petersburg 194021, Russia.
authors.forename: V A
authors.initials: VA
authors.lastname: Soltamov
authors.affiliation: Kazan Federal University, Kazan 420008, Russia.
authors.forename: B V
authors.initials: BV
authors.lastname: Yavkin
authors.affiliation: Ioffe Physical Technical Institute, St. Petersburg 194021, Russia.
authors.forename: D O
authors.initials: DO
authors.lastname: Tolmachev
authors.affiliation: Ioffe Physical Technical Institute, St. Petersburg 194021, Russia.
authors.forename: R A
authors.initials: RA
authors.lastname: Babunts
authors.affiliation: Ioffe Physical Technical Institute, St. Petersburg 194021, Russia.
authors.forename: A G
authors.initials: AG
authors.lastname: Badalyan
authors.affiliation: Ioffe Physical Technical Institute, St. Petersburg 194021, Russia.
authors.forename: V Yu
authors.initials: VY
authors.lastname: Davydov
authors.affiliation: Ioffe Physical Technical Institute, St. Petersburg 194021, Russia.
authors.forename: E N
authors.initials: EN
authors.lastname: Mokhov
authors.affiliation: Institute of Basic Biological Problems RAS, Pushchino 142290, Russia.
authors.forename: I I
authors.initials: II
authors.lastname: Proskuryakov
authors.affiliation: Kazan Federal University, Kazan 420008, Russia.
authors.forename: S B
authors.initials: SB
authors.lastname: Orlinskii
authors.affiliation: Ioffe Physical Technical Institute, St. Petersburg 194021, Russia.
authors.forename: P G
authors.initials: PG
authors.lastname: Baranov
mesh_terms: D017554:Carbon Compounds, Inorganic / Q000737:chemistry*; D003460:Crystallization; D004578:Electron Spin Resonance Spectroscopy / Q000379:methods; D008956:Models, Chemical; D011789:Quantum Theory; D017655:Silicon Compounds / Q000737:chemistry*
chemical_list: D017554:Carbon Compounds, Inorganic; D017655:Silicon Compounds; C022088:silicon carbide