title: Electron Spin Coherence of Shallow Donors in Natural and Isotopically Enriched Germanium.
abstract: Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long coherence times (T_{2}) when the host material is isotopically enriched to remove any magnetic nuclei. Germanium also has nonmagnetic isotopes so it is expected to support long T_{2}'s while offering some new properties. Compared to Si, Ge has a strong spin-orbit coupling, large electron wave function, high mobility, and highly anisotropic conduction band valleys which will all give rise to new physics. In this Letter, the first pulsed electron spin resonance measurements of T_{2} and the spin-lattice relaxation (T_{1}) times for ^{75}As and ^{31}P donors in natural and isotopically enriched germanium are presented. We compare samples with various levels of isotopic enrichment and find that spectral diffusion due to ^{73}Ge nuclear spins limits the coherence in samples with significant amounts of ^{73}Ge. For the most highly enriched samples, we find that T_{1} limits T_{2} to T_{2}=2T_{1}. We report an anisotropy in T_{1} and the ensemble linewidths for magnetic fields oriented along different crystal axes but do not resolve any angular dependence to the spectral-diffusion-limited T_{2} in samples with ^{73}Ge.
authors.affiliation: Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
authors.forename: A J
authors.initials: AJ
authors.lastname: Sigillito
authors.affiliation: Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
authors.forename: R M
authors.initials: RM
authors.lastname: Jock
authors.affiliation: Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
authors.forename: A M
authors.initials: AM
authors.lastname: Tyryshkin
authors.affiliation: Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
authors.forename: J W
authors.initials: JW
authors.lastname: Beeman
authors.affiliation: Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.|Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.
authors.forename: E E
authors.initials: EE
authors.lastname: Haller
authors.affiliation: School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohuku-ku, Yokohama 223-8522, Japan.
authors.forename: K M
authors.initials: KM
authors.lastname: Itoh
authors.affiliation: Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
authors.forename: S A
authors.initials: SA
authors.lastname: Lyon