title: Hybrid Tunnel Junction-Graphene Transparent Conductive Electrodes for Nitride Lateral Light Emitting Diodes.
abstract: Graphene transparent conductive electrode (TCE) applications in nitride light emitting diodes (LEDs) are still limited by the large contact resistance and interface barrier between graphene and p-GaN. We propose a hybrid tunnel junction (TJ)-graphene TCE approach for nitride lateral LEDs theoretically and experimentally. Through simulation using commercial advanced physical models of semiconductor devices (APSYS), we found that low tunnel resistance can be achieved in the n(+)-GaN/u-InGaN/p(+)-GaN TJ, which has a lower tunneling barrier and an enhanced electric field due to the polarization effect. Graphene TCEs and hybrid graphene-TJ TCEs are then modeled. The designed hybrid TJ-graphene TCEs show sufficient current diffusion length (Ls), low introduced series resistance, and high transmittance. The assembled TJ LED with the triple-layer graphene (TLG) TCEs show comparable optoelectrical performance (3.99 V@20 mA, LOP = 10.8 mW) with the reference LED with ITO TCEs (3.36 V@20 mA, LOP = 12.6 mW). The experimental results further prove that the TJ-graphene structure can be successfully incorporated as TCEs for lateral nitride LEDs.
authors.affiliation: Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.|Mind Star (Beijing) Technology Co., Ltd. , Zhongguancun South Street, Haidian District, No. 45 Hing Fat Building 1001, Beijing 100872, China.
authors.forename: Liancheng
authors.initials: L
authors.lastname: Wang
authors.affiliation: Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.|Department of Electrical and Computer Engineering, John Hopkins University , Baltimore, Maryland 21218, United States.
authors.forename: Yan
authors.initials: Y
authors.lastname: Cheng
authors.affiliation: Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Zhiqiang
authors.initials: Z
authors.lastname: Liu
authors.affiliation: Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Xiaoyan
authors.initials: X
authors.lastname: Yi
authors.affiliation: School of Materials Science and Engineering, State Key Lab of New Ceramic & Fine Processing, Tsinghua University , Beijing 100084, China.
authors.forename: Hongwei
authors.initials: H
authors.lastname: Zhu
authors.affiliation: Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Guohong
authors.initials: G
authors.lastname: Wang
keywords: current spreading; gallium nitride; graphene; light emitting diodes; transparent conductive electrodes; tunnel junction