title: Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices.
abstract: Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process.
authors.affiliation: National Creative Research Initiative Center for Smart Block Copolymer Self-Assembly, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyungbuk 790-784, Republic of Korea. jkkim@postech.ac.kr.
authors.forename: Seung
authors.initials: S
authors.lastname: Hyun
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Republic of Korea. yunseokkim@skku.edu.
authors.forename: Owoong
authors.initials: O
authors.lastname: Kwon
authors.affiliation: National Creative Research Initiative Center for Smart Block Copolymer Self-Assembly, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyungbuk 790-784, Republic of Korea. jkkim@postech.ac.kr.
authors.forename: Bom-Yi
authors.initials: BY
authors.lastname: Lee
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Republic of Korea. yunseokkim@skku.edu.
authors.forename: Daehee
authors.initials: D
authors.lastname: Seol
authors.affiliation: National Creative Research Initiative Center for Smart Block Copolymer Self-Assembly, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyungbuk 790-784, Republic of Korea. jkkim@postech.ac.kr.
authors.forename: Beomjin
authors.initials: B
authors.lastname: Park
authors.affiliation: National Creative Research Initiative Center for Smart Block Copolymer Self-Assembly, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyungbuk 790-784, Republic of Korea. jkkim@postech.ac.kr.
authors.forename: Jae Yong
authors.initials: JY
authors.lastname: Lee
authors.affiliation: National Creative Research Initiative Center for Smart Block Copolymer Self-Assembly, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyungbuk 790-784, Republic of Korea. jkkim@postech.ac.kr.
authors.forename: Ju Hyun
authors.initials: JH
authors.lastname: Lee
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Republic of Korea. yunseokkim@skku.edu.
authors.forename: Yunseok
authors.initials: Y
authors.lastname: Kim
authors.affiliation: National Creative Research Initiative Center for Smart Block Copolymer Self-Assembly, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyungbuk 790-784, Republic of Korea. jkkim@postech.ac.kr.
authors.forename: Jin Kon
authors.initials: JK
authors.lastname: Kim