title: Physical vapor deposition synthesis of two-dimensional orthorhombic SnS flakes with strong angle/temperature-dependent Raman responses.
abstract: Anisotropic layered semiconductors have attracted significant interest due to the huge possibility of bringing new functionalities to thermoelectric, electronic and optoelectronic devices. Currently, most reports on anisotropy have concentrated on black phosphorus and ReS2, less effort has been contributed to other layered materials. In this work, two-dimensional (2D) orthorhombic SnS flakes on a large scale have been successfully synthesized via a simple physical vapor deposition method. Angle-dependent Raman spectroscopy indicated that the orthorhombic SnS flakes possess a strong anisotropic Raman response. Under a parallel-polarization configuration, the peak intensity of Ag (190.7 cm(-1)) Raman mode reaches the maximum when incident light polarization is parallel to the armchair direction of the 2D SnS flakes, which strongly suggests that the Ag (190.7 cm(-1)) mode can be used to determine the crystallographic orientation of the 2D SnS. In addition, temperature-dependent Raman characterization confirmed that the 2D SnS flakes have a higher sensitivity to temperature than graphene, MoS2 and black phosphorus. These results are useful for the future studies of the optical and thermal properties of 2D orthorhombic SnS.
authors.affiliation: Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China. mengxiangmin@mail.ipc.ac.cn.
authors.forename: Jing
authors.initials: J
authors.lastname: Xia
authors.affiliation: Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China. mengxiangmin@mail.ipc.ac.cn.
authors.forename: Xuan-Ze
authors.initials: XZ
authors.lastname: Li
authors.affiliation: Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China. mengxiangmin@mail.ipc.ac.cn.
authors.forename: Xing
authors.initials: X
authors.lastname: Huang
authors.affiliation: Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
authors.forename: Nannan
authors.initials: N
authors.lastname: Mao
authors.affiliation: Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China. mengxiangmin@mail.ipc.ac.cn.
authors.forename: Dan-Dan
authors.initials: DD
authors.lastname: Zhu
authors.affiliation: Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China. mengxiangmin@mail.ipc.ac.cn.
authors.forename: Lei
authors.initials: L
authors.lastname: Wang
authors.affiliation: School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710062, P.R. China.
authors.forename: Hua
authors.initials: H
authors.lastname: Xu
authors.affiliation: Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China. mengxiangmin@mail.ipc.ac.cn.
authors.forename: Xiang-Min
authors.initials: XM
authors.lastname: Meng