title: Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface.
abstract: The interface layer has great significance on the potential barrier height of the CdTe/GaAs heterointerface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 Å. During CdTe deposition, an As-Te and Ga-Te interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe interface dipole layer (more than 30 Å) was formed, which reduced the potential barrier height by 0.38 eV. The potential barrier height was in proportion to the chemical bonding density and thickness of the Ga-Te interface layer. These results provide a more fundamental understanding of the influencing mechanism of the interface layer on the potential barrier height of the CdTe/GaAs heterointerface.
authors.affiliation: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China. jwq@nwpu.edu.cn zha_gq@nwpu.edu.cn and Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, China.
authors.forename: Shouzhi
authors.initials: S
authors.lastname: Xi
authors.affiliation: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China. jwq@nwpu.edu.cn zha_gq@nwpu.edu.cn and Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, China.
authors.forename: Wanqi
authors.initials: W
authors.lastname: Jie
authors.affiliation: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China. jwq@nwpu.edu.cn zha_gq@nwpu.edu.cn and Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, China.
authors.forename: Gangqiang
authors.initials: G
authors.lastname: Zha
authors.affiliation: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China. jwq@nwpu.edu.cn zha_gq@nwpu.edu.cn.
authors.forename: Yanyan
authors.initials: Y
authors.lastname: Yuan
authors.affiliation: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China. jwq@nwpu.edu.cn zha_gq@nwpu.edu.cn and Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, China.
authors.forename: Tao
authors.initials: T
authors.lastname: Wang
authors.affiliation: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China.
authors.forename: Wenhua
authors.initials: W
authors.lastname: Zhang
authors.affiliation: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China.
authors.forename: Junfa
authors.initials: J
authors.lastname: Zhu
authors.affiliation: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China. jwq@nwpu.edu.cn zha_gq@nwpu.edu.cn and Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, China.
authors.forename: Lingyan
authors.initials: L
authors.lastname: Xu
authors.affiliation: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China. jwq@nwpu.edu.cn zha_gq@nwpu.edu.cn and Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, China.
authors.forename: Yadong
authors.initials: Y
authors.lastname: Xu
authors.affiliation: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China. jwq@nwpu.edu.cn zha_gq@nwpu.edu.cn.
authors.forename: Jie
authors.initials: J
authors.lastname: Su
authors.affiliation: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China. jwq@nwpu.edu.cn zha_gq@nwpu.edu.cn and Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, China.
authors.forename: Hao
authors.initials: H
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China. jwq@nwpu.edu.cn zha_gq@nwpu.edu.cn and Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, China.
authors.forename: Yaxu
authors.initials: Y
authors.lastname: Gu
authors.affiliation: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China. jwq@nwpu.edu.cn zha_gq@nwpu.edu.cn.
authors.forename: Jiawei
authors.initials: J
authors.lastname: Li
authors.affiliation: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China. jwq@nwpu.edu.cn zha_gq@nwpu.edu.cn and Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, China.
authors.forename: Jie
authors.initials: J
authors.lastname: Ren
authors.affiliation: State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China. jwq@nwpu.edu.cn zha_gq@nwpu.edu.cn and Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, China.
authors.forename: Qinghua
authors.initials: Q
authors.lastname: Zhao