title: Lattice Strain Induced Remarkable Enhancement in Piezoelectric Performance of ZnO-Based Flexible Nanogenerators.
abstract: In this work, by employing halogen elements (fluorine, chlorine, bromine, and iodine) as dopant we demonstrate a unique strategy to enhance the output performance of ZnO-based flexible piezoelectric nanogenerators. For a halogen-doped ZnO nanowire film, dopants and doping concentration dependent lattice strain along the ZnO c-axis are established and confirmed by the EDS, XRD, and HRTEM analysis. Although lattice strain induced charge separation was theoretically proposed, it has not been experimentally investigated for wurtzite structured ZnO nanomaterials. Tuning the lattice strain from compressive to tensile state along the ZnO c-axis can be achieved by a substitution of halogen dopant from fluorine to other halogen elements due to the ionic size difference between dopants and oxygen. With its focus on a group of nonmetal element induced lattice strain in ZnO-based nanomaterials, this work paves the way for enhancing the performance of wurtzite-type piezoelectric semiconductor nanomaterials via lattice strain strategy which can be employed to construct piezoelectric nanodevices with higher efficiency in a cost-effective manner.
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Caihong
authors.initials: C
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Device, University of Electronic Science and Technology of China , Chengdu 610054, China.
authors.forename: Jingbin
authors.initials: J
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Device, University of Electronic Science and Technology of China , Chengdu 610054, China.
authors.forename: Jie
authors.initials: J
authors.lastname: Xiong
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Jingyu
authors.initials: J
authors.lastname: Liu
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Ke
authors.initials: K
authors.lastname: Zhang
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Yudong
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Mingzeng
authors.initials: M
authors.lastname: Peng
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Aifang
authors.initials: A
authors.lastname: Yu
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Aihua
authors.initials: A
authors.lastname: Zhang
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Zhiwei
authors.initials: Z
authors.lastname: Wang
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Junyi
authors.initials: J
authors.lastname: Zhai
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.|School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0245, United States.
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang
keywords: ZnO; chemical doping; lattice strain; piezocharges separation; piezoelectric nanogenerator