title: Enhanced power conversion efficiency in InGaN-based solar cells via graded composition multiple quantum wells.
abstract: This work demonstrates the enhanced power conversion efficiency (PCE) in InGaN/GaN multiple quantum well (MQWs) solar cells with gradually decreasing indium composition in quantum wells (GQWs) toward p-GaN as absorber. The GQW can improve the fill factor from 42% to 62% and enhance the short current density from 0.8 mA/cm2to 0.92 mA/cm2, as compares to the typical MQW solar cells. As a result, the PCE is boosted from 0.63% to 1.11% under AM1.5G illumination. Based on simulation and experimental results, the enhanced PCE can be attributed to the improved carrier collection in GQW caused by the reduction of potential barriers and piezoelectric polarization induced fields near the p-GaN layer. The presented concept paves a way toward highly efficient InGaN-based solar cells and other GaN-related MQW devices.
authors.forename: Yu-Lin
authors.initials: YL
authors.lastname: Tsai
authors.forename: Sheng-Wen
authors.initials: SW
authors.lastname: Wang
authors.forename: Jhih-Kai
authors.initials: JK
authors.lastname: Huang
authors.forename: Lung-Hsing
authors.initials: LH
authors.lastname: Hsu
authors.forename: Ching-Hsueh
authors.initials: CH
authors.lastname: Chiu
authors.forename: Po-Tsung
authors.initials: PT
authors.lastname: Lee
authors.forename: Peichen
authors.initials: P
authors.lastname: Yu
authors.forename: Chien-Chung
authors.initials: CC
authors.lastname: Lin
authors.forename: Hao-Chung
authors.initials: HC
authors.lastname: Kuo