title: Infrared light gated MoS₂ field effect transistor.
abstract: Molybdenum disulfide (MoS₂) as a promising 2D material has attracted extensive attentions due to its unique physical, optical and electrical properties. In this work, we demonstrate an infrared (IR) light gated MoS₂ transistor through a device composed of MoS₂ monolayer and a ferroelectric single crystal Pb(Mg(1/3)Nb(2/3))O₃-PbTiO₃ (PMN-PT). With a monolayer MoS₂ onto the top surface of (111) PMN-PT crystal, the drain current of MoS₂ channel can be modulated with infrared illumination and this modulation process is reversible. Thus, the transistor can work as a new kind of IR photodetector with a high IR responsivity of 114%/Wcm⁻². The IR response of MoS₂ transistor is attributed to the polarization change of PMN-PT single crystal induced by the pyroelectric effect which results in a field effect. Our result promises the application of MoS₂ 2D material in infrared optoelectronic devices. Combining with the intrinsic photocurrent feature of MoS₂ in the visible range, the MoS₂ on ferroelectric single crystal may be sensitive to a broadband wavelength of light.
authors.forename: Huajing
authors.initials: H
authors.lastname: Fang
authors.forename: Ziyuan
authors.initials: Z
authors.lastname: Lin
authors.forename: Xinsheng
authors.initials: X
authors.lastname: Wang
authors.forename: Chun-Yin
authors.initials: CY
authors.lastname: Tang
authors.forename: Yan
authors.initials: Y
authors.lastname: Chen
authors.forename: Fan
authors.initials: F
authors.lastname: Zhang
authors.forename: Yang
authors.initials: Y
authors.lastname: Chai
authors.forename: Qiang
authors.initials: Q
authors.lastname: Li
authors.forename: Qingfeng
authors.initials: Q
authors.lastname: Yan
authors.forename: H L W
authors.initials: HL
authors.lastname: Chan
authors.forename: Ji-Yan
authors.initials: JY
authors.lastname: Dai