title: Asymmetric light reflectance from metal nanoparticle arrays on dielectric surfaces.
abstract: Asymmetric light reflectance associated with localized surface plasmons excited in metal nanoparticles on a quartz substrate is observed and analyzed. This phenomenon is explained by the superposition of two waves, the wave reflected by the air/quartz interface and that reflected by the metal nanoparticles, and the resulting interference effects. Far field behavior investigation suggests that zero reflection can be achieved by optimizing the density of metal nanoparticles. Near field behavior investigation suggests that the coupling efficiency of localized surface plasmon can be additionally enhanced by separating the metal NPs from substrates using a thin film with refractive index smaller than the substrate. The latter behavior is confirmed via surface-enhanced Raman spectroscopy studies using metal nanoparticles on Si/SiO2 substrates.
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: K
authors.initials: K
authors.lastname: Huang
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: W
authors.initials: W
authors.lastname: Pan
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: J F
authors.initials: JF
authors.lastname: Zhu
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: J C
authors.initials: JC
authors.lastname: Li
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: N
authors.initials: N
authors.lastname: Gao
authors.affiliation: Department of Chemistry, State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen 361005, China.
authors.forename: C
authors.initials: C
authors.lastname: Liu
authors.affiliation: Department of Electrical and Computer Engineering, Microelectronic Research Centre, The University of Texas at Austin, Austin, Texas, 78758, USA.
authors.forename: L
authors.initials: L
authors.lastname: Ji
authors.affiliation: Department of Electrical and Computer Engineering, Microelectronic Research Centre, The University of Texas at Austin, Austin, Texas, 78758, USA.
authors.forename: E T
authors.initials: ET
authors.lastname: Yu
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: J Y
authors.initials: JY
authors.lastname: Kang