title: Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires.
abstract: Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about 2-fold larger in magnitude than those on the (0001̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.|Collaborative Innovation Center of Quantum Matter , Beijing 100871, P. R. China.
authors.forename: Ping
authors.initials: P
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.|Collaborative Innovation Center of Quantum Matter , Beijing 100871, P. R. China.
authors.forename: Ying
authors.initials: Y
authors.lastname: Yuan
authors.affiliation: King Abdullah University of Science and Technology , Division of Physical Science and Engineering and Core Laboratories, Thuwal 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Chao
authors.initials: C
authors.lastname: Zhao
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.|Collaborative Innovation Center of Quantum Matter , Beijing 100871, P. R. China.
authors.forename: Xinqiang
authors.initials: X
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.
authors.forename: Xiantong
authors.initials: X
authors.lastname: Zheng
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.
authors.forename: Xin
authors.initials: X
authors.lastname: Rong
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.
authors.forename: Tao
authors.initials: T
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.
authors.forename: Bowen
authors.initials: B
authors.lastname: Sheng
authors.affiliation: King Abdullah University of Science and Technology , Division of Physical Science and Engineering and Core Laboratories, Thuwal 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Qingxiao
authors.initials: Q
authors.lastname: Wang
authors.affiliation: King Abdullah University of Science and Technology , Division of Physical Science and Engineering and Core Laboratories, Thuwal 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Yongqiang
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS) , Suzhou 215123, P. R. China.
authors.forename: Lifeng
authors.initials: L
authors.lastname: Bian
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.
authors.forename: Xuelin
authors.initials: X
authors.lastname: Yang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.
authors.forename: Fujun
authors.initials: F
authors.lastname: Xu
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.
authors.forename: Zhixin
authors.initials: Z
authors.lastname: Qin
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.|Collaborative Innovation Center of Quantum Matter , Beijing 100871, P. R. China.
authors.forename: Xinzheng
authors.initials: X
authors.lastname: Li
authors.affiliation: King Abdullah University of Science and Technology , Division of Physical Science and Engineering and Core Laboratories, Thuwal 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Xixiang
authors.initials: X
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.|Collaborative Innovation Center of Quantum Matter , Beijing 100871, P. R. China.
authors.forename: Bo
authors.initials: B
authors.lastname: Shen
keywords: hexagonal semiconductor; indium nitride; lattice-polarity; molecular beam epitaxy; nanowires