title: High-energy passively Q-switched operation of Yb:GdCa(4)O(BO(3))(3) laser with a GaAs semiconductor saturable absorber.
abstract: High-energy passively Q-switched operation of a Yb:GdCa(4)O(BO(3))(3) laser is demonstrated, with a GaAs crystal plate acting as saturable absorber. An average output power of 1.31 W at 1027 nm is produced at a pulse repetition rate of 1.92 kHz, the resulting pulse energy, duration, and peak power being respectively 0.68 mJ, 9.0 ns, and 75.6 kW. The shortest pulse duration obtained is 4.9 ns; whereas the maximum pulse energy achievable amounts to 0.83 mJ, which proves to be nearly one order of magnitude higher than ever generated from Yb or Nd lasers passively Q-switched by a GaAs saturable absorber.
authors.forename: Xiaowen
authors.initials: X
authors.lastname: Chen
authors.forename: Lisha
authors.initials: L
authors.lastname: Wang
authors.forename: Wenjuan
authors.initials: W
authors.lastname: Han
authors.forename: Yunfeng
authors.initials: Y
authors.lastname: Guo
authors.forename: Honghao
authors.initials: H
authors.lastname: Xu
authors.forename: Haohai
authors.initials: H
authors.lastname: Yu
authors.forename: Huaijin
authors.initials: H
authors.lastname: Zhang
authors.forename: Junhai
authors.initials: J
authors.lastname: Liu