title: Experimental realization of ultrathin, double-sided metamaterial perfect absorber at terahertz gap through stochastic design process.
abstract: We design and demonstrate a flexible, ultrathin and double-sided metamaterial perfect absorber (MPA) at 2.39 terahertz (THz), which enables excellent light absorbance under incidences from two opposite sides. Herein, the MPA is fabricated on a λ0/10.1-thick flexible polyethylene terephthalate substrate of εr = 2.75 × (1 + 0.12i), sandwiched by two identical randomized metallic patterns by our stochastic design process. Such an MPA provides tailored permittivity and permeability to approach the impedance of free space for minimizing reflectance and a great imaginary part of the refractive index for reducing transmittance and finally results in high absorbance. Both experimental measurement and numerical simulation are in a good agreement. The flexible, ultrathin and double-sided MPA significantly differs from traditional quarter-wavelength absorbers and other single-sided perfect absorbers, paving a way toward practical THz applications in thermal emission, sensing and imaging, communications, stealth technique, and even energy harvesting.
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
authors.forename: Tsung-Yu
authors.initials: TY
authors.lastname: Huang
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
authors.forename: Ching-Wei
authors.initials: CW
authors.lastname: Tseng
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
authors.forename: Ting-Tso
authors.initials: TT
authors.lastname: Yeh
authors.affiliation: Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
authors.forename: Tien-Tien
authors.initials: TT
authors.lastname: Yeh
authors.affiliation: Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
authors.forename: Chih-Wei
authors.initials: CW
authors.lastname: Luo
authors.affiliation: Institute of Electronic, Microelectronic and Nanotechnology, Lille University, France.
authors.forename: Tahsin
authors.initials: T
authors.lastname: Akalin
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.|Department of Materials Science Center for Nanotechnology, Materials Science, and Microsystems, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
authors.forename: Ta-Jen
authors.initials: TJ
authors.lastname: Yen