title: High Performance Nanostructured Silicon-Organic Quasi p-n Junction Solar Cells via Low-Temperature Deposited Hole and Electron Selective Layer.
abstract: Silicon-organic solar cells based on conjugated polymers such as poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (
  PSS) on n-type silicon (n-Si) attract wide interest because of their potential for cost-effectiveness and high-efficiency. However, a lower barrier height (Φb) and a shallow built in potential (Vbi) of Schottky junction between n-Si and
  PSS hinders the power conversion efficiency (PCE) in comparison with those of traditional p-n junction. Here, a strong inversion layer was formed on n-Si surface by inserting a layer of 1, 4, 5, 8, 9, 11-hexaazatriphenylene hexacarbonitrile (HAT-CN), resulting in a quasi p-n junction. External quantum efficiency spectra, capacitance-voltage, transient photovoltage decay and minority charge carriers life mapping measurements indicated that a quasi p-n junction was built due to the strong inversion effect, resulting in a high Φb and Vbi. The quasi p-n junction located on the front surface region of silicon substrates improved the short wavelength light conversion into photocurrent. In addition, a derivative perylene diimide (PDIN) layer between rear side of silicon and aluminum cathodes was used to block the holes from flowing to cathodes. As a result, the device with PDIN layer also improved photoresponse at longer wavelength. A champion PCE of 14.14% was achieved for the nanostructured silicon-organic device by combining HAT-CN and PDIN layers. The low temperature and simple device structure with quasi p-n junction promises cost-effective high performance photovoltaic techniques.
authors.affiliation: Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China.
authors.forename: Yuqiang
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Zhi-Guo
authors.initials: ZG
authors.lastname: Zhang
authors.affiliation: Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China.
authors.forename: Zhouhui
authors.initials: Z
authors.lastname: Xia
authors.affiliation: Department of Electronic Engineering, The Chinese University of Hong Kong , New Territories, Hong Kong, China.
authors.forename: Jie
authors.initials: J
authors.lastname: Zhang
authors.affiliation: Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China.
authors.forename: Feng
authors.initials: F
authors.lastname: Liang
authors.affiliation: Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Yongfang
authors.initials: Y
authors.lastname: Li
authors.affiliation: Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China.
authors.forename: Tao
authors.initials: T
authors.lastname: Song
authors.affiliation: State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, China.
authors.forename: Xuegong
authors.initials: X
authors.lastname: Yu
authors.affiliation: Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China.
authors.forename: Shuit-Tong
authors.initials: ST
authors.lastname: Lee
authors.affiliation: Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University , Suzhou 215123, China.
authors.forename: Baoquan
authors.initials: B
authors.lastname: Sun
keywords: HAT-CN; PDIN; inversion layer; quasi p−n junction; silicon−organic solar cell