title: Plasma Characteristics Using Superimposed Dual Frequency Inductively Coupled Plasma Source for Next Generation Device Processing.
abstract: U-shaped inductively coupled plasma (ICP) source was investigated as a linear plasma source for the next generation roll-to-toll flexible display processing. For the radio frequency power to the source, the dual frequency composed of 13.56 MHz and 2 MHz was used and the effect of dual frequency to the U-shaped ICP source on the plasma density, electron temperature, and plasma uniformity was investigated. As the operating condition, 200 mTorr Ar was used without operating turbo pumps. The use of superimposed dual frequency composed of 13.56 MHz + 2 MHz instead the single frequency of 13.56 MHz increased the plasma density slightly at the same total power. In addition, the addition of 2 MHz rf power to 0.4 kW while maintaining 1 kW 13.56 MHz rf power not only decreased electron temperature but also improved both the plasma uniformity and the process uniformity measured by photoresist etching. Therefore, by using the dual frequency to the U-shaped ICP source, not only the plasma density but also plasma uniformity could be improved in addition to the decrease of possible damage to the substrate.
authors.forename: Seung Min
authors.initials: SM
authors.lastname: Lee
authors.forename: Chul Hee
authors.initials: CH
authors.lastname: Lee
authors.forename: Tae Hyung
authors.initials: TH
authors.lastname: Kim
authors.forename: Geun Young
authors.initials: GY
authors.lastname: Yeom
authors.forename: Kyong Nam
authors.initials: KN
authors.lastname: Kim