title: Electric-field control of spin-orbit torque in a magnetically doped topological insulator.
abstract: Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate field-effect transistor structure. The SOT strength can be modulated by a factor of four within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies.
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Yabin
authors.initials: Y
authors.lastname: Fan
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Xufeng
authors.initials: X
authors.lastname: Kou
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Pramey
authors.initials: P
authors.lastname: Upadhyaya
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Qiming
authors.initials: Q
authors.lastname: Shao
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Lei
authors.initials: L
authors.lastname: Pan
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Murong
authors.initials: M
authors.lastname: Lang
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Xiaoyu
authors.initials: X
authors.lastname: Che
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Jianshi
authors.initials: J
authors.lastname: Tang
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Mohammad
authors.initials: M
authors.lastname: Montazeri
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Koichi
authors.initials: K
authors.lastname: Murata
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Li-Te
authors.initials: LT
authors.lastname: Chang
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Mustafa
authors.initials: M
authors.lastname: Akyol
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Guoqiang
authors.initials: G
authors.lastname: Yu
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Tianxiao
authors.initials: T
authors.lastname: Nie
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Kin L
authors.initials: KL
authors.lastname: Wong
authors.affiliation: Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
authors.forename: Jun
authors.initials: J
authors.lastname: Liu
authors.affiliation: Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
authors.forename: Yong
authors.initials: Y
authors.lastname: Wang
authors.affiliation: Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA.
authors.forename: Yaroslav
authors.initials: Y
authors.lastname: Tserkovnyak
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Kang L
authors.identifier: http://orcid.org/0000-0002-9363-1279
authors.initials: KL
authors.lastname: Wang