title: Growth of multiple WS2/SnS layered semiconductor heterojunctions.
abstract: Both WS2 and SnS are 2-dimensional, van der Waals semiconductors, but with different crystal structures. Heteroepitaxy of these materials was investigated by growing 3 alternating layers of each of these materials using atomic layer deposition on 5 cm × 5 cm substrates. Initially, WS2 and SnS films were grown and characterized separately. Back-gated transistors of WS2 displayed n-type behavior with an effective mobility of 12 cm(2) V(-1) s(-1), whereas SnS transistors showed a p-type conductivity with a hole mobility of 818 cm(2) V(-1) s(-1). All mobility measurements were performed at room temperature. As expected, the heterostructure displayed an ambipolar behavior with a slightly higher electron mobility than that of WS2 transistors, but with a significantly reduced hole mobility. The reason for this drop can be explained with transmission electron micrographs that show the striation direction of the SnS layers is perpendicular to that of the WS2 with a 15 degree twist, hence the holes have to pass through van der Waals layers that results in drop of their mobility.
authors.affiliation: Department of Physics, Portland State University, Portland, OR, USA.
authors.forename: Robert
authors.initials: R
authors.lastname: Browning
authors.affiliation: Department of Physics, Portland State University, Portland, OR, USA.
authors.forename: Paul
authors.initials: P
authors.lastname: Plachinda
authors.affiliation: Department of Physics, Portland State University, Portland, OR, USA.
authors.forename: Prasanna
authors.initials: P
authors.lastname: Padigi
authors.affiliation: Department of Physics, Portland State University, Portland, OR, USA.
authors.forename: Raj
authors.initials: R
authors.lastname: Solanki
authors.affiliation: Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA.
authors.forename: Sergei
authors.initials: S
authors.lastname: Rouvimov