title: Effect of Hydrogen Post-Annealing on Transparent Conductive ITO/Ga2O3 Bi-Layer Films for Deep Ultraviolet Light-Emitting Diodes.
abstract: The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples--an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture--were prepared and annealed at different temperatures ranging from 100 °C to 500 °C for comparison. Among these samples, the sample annealed at 300 °C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/square and a high UV transmittance of 87.1% at 300 nm.
authors.forename: Kyeong Heon
authors.initials: KH
authors.lastname: Kim
authors.forename: Su Jin
authors.initials: SJ
authors.lastname: Kim
authors.forename: Sang Young
authors.initials: SY
authors.lastname: Park
authors.forename: Tae Geun
authors.initials: TG
authors.lastname: Kim