title: Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD.
abstract: In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.
authors.forename: Chan-Hwa
authors.initials: CH
authors.lastname: Hong
authors.forename: Jae-Heon
authors.initials: JH
authors.lastname: Shin
authors.forename: Nae-Man
authors.initials: NM
authors.lastname: Park
authors.forename: Kyung-Hyun
authors.initials: KH
authors.lastname: Kim
authors.forename: Bo-Sul
authors.initials: BS
authors.lastname: Kim
authors.forename: Chang-Woo
authors.initials: CW
authors.lastname: Song
authors.forename: Ji-Woong
authors.initials: JW
authors.lastname: Yang
authors.forename: Woo-Hyung
authors.initials: WH
authors.lastname: Seo
authors.forename: Byeong-Kwon
authors.initials: BK
authors.lastname: Ju
authors.forename: Woo-Seok
authors.initials: WS
authors.lastname: Cheong