title: Influence of Droplet Size on the Growth of Self-Catalyzed Ternary GaAsP Nanowires.
abstract: The influences of droplet size on the growth of self-catalyzed ternary nanowires (NWs) were studied using GaAsP NWs. The size-induced Gibbs-Thomson (GT) effect makes the smaller catalytic droplets have lower effective supersaturations and hence slower nucleation rates than the larger ones. Large variation in droplet size thus led to the growth of NWs with low uniformity, while a good size uniformity of droplets resulted in the production of highly uniform NWs. Moreover, thinner NWs were observed to be richer in P, indicating that P is more resistant to the GT effect than As because of a higher chemical potential inside Ga droplets. These results provide useful information for understanding the mechanisms of self-catalyzed III-V NW nucleation and growth with the important ternary III-V material systems.
authors.affiliation: Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom.
authors.forename: Yunyan
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Department of Physics, University of Warwick , Coventry CV4 7AL, United Kingdom.
authors.forename: Ana M
authors.initials: AM
authors.lastname: Sanchez
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences , Beijing 100190, People's Republic of China.
authors.forename: Yue
authors.initials: Y
authors.lastname: Sun
authors.affiliation: Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom.
authors.forename: Jiang
authors.initials: J
authors.lastname: Wu
authors.affiliation: Gasp Solar ApS, Gregersensvej 7, Taastrup DK-2630, Denmark.
authors.forename: Martin
authors.initials: M
authors.lastname: Aagesen
authors.affiliation: London Centre for Nanotechnology, University College London , London WC1H 0AH, United Kingdom.
authors.forename: Suguo
authors.initials: S
authors.lastname: Huo
authors.affiliation: Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom.
authors.forename: Dongyoung
authors.initials: D
authors.lastname: Kim
authors.affiliation: Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom.
authors.forename: Pamela
authors.initials: P
authors.lastname: Jurczak
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences , Beijing 100190, People's Republic of China.
authors.forename: Xiulai
authors.initials: X
authors.lastname: Xu
authors.affiliation: Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom.
authors.forename: Huiyun
authors.initials: H
authors.lastname: Liu
keywords: GaAsP; Gibbs−Thomson effect; Nanowire; chemical potential; droplet size; self−catalyzed; uniformity