title: On the mechanism of ultrasonic loading effect in silicon-based Schottky diodes.
abstract: The influence of ultrasonic loading on current-voltage characteristics of Mo/n-n(+)-Si structures has been investigated. The research of Schottky barrier height variation has been carried out for various ultrasonic waves frequency (4.1, 8.4, and 27.8 MHz), intensity (up to 0.8 W/cm(2)) and loading temperature (160-330 K). The obtained results have been analyzed on account of the dislocation nature of the interface patches and model of ultrasound absorption by dislocation kinks. The values of the kink diffusion activation energy Wk=(90±10) meV and the frequency parameter fk=(3±2)·10(9) Hz have been determined.
authors.affiliation: Taras Shevchenko National University of Kyiv, 64/13, Volodymyrska Street, Kyiv 01601, Ukraine. Electronic address: olikh@univ.kiev.ua.
authors.forename: Oleg
authors.initials: O
authors.lastname: Olikh
authors.affiliation: Taras Shevchenko National University of Kyiv, 64/13, Volodymyrska Street, Kyiv 01601, Ukraine.
authors.forename: Katerina
authors.initials: K
authors.lastname: Voytenko
keywords: Current–voltage characteristics; Shottky diode; Silicon; Ultrasound influence features