title: Electrical Characteristics of Ni-CNT-SiO2-SiC Structured 4H-SiC MIS Capacitors.
abstract: In this study, the electrical characteristics of Ni-CNT-SiO2-SiC structured 4H-SiC MIS capacitors were investigated. The effect of CNTs in the gate/insulator interface have been characterized by C-V measurement at 300 to 500K and J-V have also been measured. The experimental flat-band voltage tends to change with or without CNTs. Current densities of both devices are observed a negligible difference up to 3 V. It has been found that adding CNTs and/or change of temperature can help to control the positive and/or negative flat-band voltage shift.
authors.forename: Taeseop
authors.initials: T
authors.lastname: Lee
authors.forename: Min-Seok
authors.initials: MS
authors.lastname: Kang
authors.forename: Tae-Jun
authors.initials: TJ
authors.lastname: Ha
authors.forename: Sang-Mo
authors.initials: SM
authors.lastname: Koo