title: Room Temperature Semiconductor-Metal Transition of MoTe2 Thin Films Engineered by Strain.
abstract: We demonstrate a room temperature semiconductor-metal transition in thin film MoTe2 engineered by strain. Reduction of the 2H-1T' phase transition temperature of MoTe2 to room temperature was realized by introducing a tensile strain of 0.2%. The observed first-order SM transition improved conductance ∼10 000 times and was made possible by an unusually large temperature-stress coefficient, which results from a large volume change and small latent heat. The demonstrated strain-modulation of the phase transition temperature is expected to be compatible with other TMDs enabling the 2D electronics utilizing polymorphism of TMDs along with the established materials.
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, Department of Physics, and §School of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 440-746, Korea.
authors.forename: Seunghyun
authors.initials: S
authors.lastname: Song
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, Department of Physics, and §School of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 440-746, Korea.
authors.forename: Dong Hoon
authors.initials: DH
authors.lastname: Keum
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, Department of Physics, and §School of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 440-746, Korea.
authors.forename: Suyeon
authors.initials: S
authors.lastname: Cho
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, Department of Physics, and §School of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 440-746, Korea.
authors.forename: David
authors.initials: D
authors.lastname: Perello
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, Department of Physics, and §School of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 440-746, Korea.
authors.forename: Yunseok
authors.initials: Y
authors.lastname: Kim
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, Department of Physics, and §School of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 440-746, Korea.
authors.forename: Young Hee
authors.initials: YH
authors.lastname: Lee
keywords: MoTe2; Strain; modulation; phase transition; semiconductor-metal transition