title: Fabrication of Stretchable Organic-Inorganic Hybrid Thin-Film Transistors on Polyimide Stiff-Island Structures.
abstract: In this study, stretchable organic-inorganic hybrid thin-film transistors (TFTs) are fabricated on a polyimide (PI) stiff-island/elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and oxide semiconductor In-Ga-Zn-O as the gate dielectric and semiconducting layer, respectively. Carrier mobility, Ion/Ioff ratio, and subthreshold swing (SS) values of 6.1 cm2 V(-1) s(-1), 10(7), and 0.2 V/decade, respectively, were achieved. For the hybrid TFTs, the endurable maximum strain without degradation of electrical properties was approximately 49%. These results correspond to those obtained in the first study on fabrication of stretchable hybrid-type TFTs on elastomer substrate using an organic gate insulator and oxide semiconducting active channel structure, thus indicating the feasibility of a promising device for stretchable electronic systems.
authors.forename: Soon-Won
authors.initials: SW
authors.lastname: Jung
authors.forename: Jae Bon
authors.initials: JB
authors.lastname: Koo
authors.forename: Chan Woo
authors.initials: CW
authors.lastname: Park
authors.forename: Bock Soon
authors.initials: BS
authors.lastname: Na
authors.forename: Ji-Young
authors.initials: JY
authors.lastname: Oh
authors.forename: Sang Seok
authors.initials: SS
authors.lastname: Lee