title: Optoelectronic Characterization of Infrared Photodetector Fabricated on Ge-on-Si Substrate.
abstract: We report on the optoelectronic characterization of Ge p-i-n infrared photodetector fabricated on Ge-on-Si substrate using rapid thermal chemical vapor deposition (RTCVD). The phosphorous doping concentration and the root mean square (RMS) surface roughness of epitaxial layer was estimated to be 2 x 10(18) cm(-3) and 1.2 nm, respectively. The photodetector were characterized with respect to their dark, photocurrent and responsivities in the wavelength range of 1530-1630 nm. At 1550 nm wavelength, responsivity of 0.32 A/W was measured for a reverse bias of 1 V, corresponding to 25% external quantum efficiency, without an optimal antireflection coating. Responsivity drastically reduced from 1560 nm wavelength which could be attributed to decreased absorption of Ge at room temperature.
authors.forename: Zagarzusem
authors.initials: Z
authors.lastname: Khurelbaatar
authors.forename: Yeon-Ho
authors.initials: YH
authors.lastname: Kil
authors.forename: Taek Sung
authors.initials: TS
authors.lastname: Kim
authors.forename: Kyu-Hwan
authors.initials: KH
authors.lastname: Shim
authors.forename: Hyobong
authors.initials: H
authors.lastname: Hong
authors.forename: Chel-Jong
authors.initials: CJ
authors.lastname: Choi