title: Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides.
abstract: This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS2. The layer controllability and large area uniformity essential for electronic and optical device applications is achieved through atomic layer deposition in what is named self-limiting layer synthesis (SLS); a process in which the number of layers is determined by temperature rather than process cycles due to the chemically inactive nature of 2D MoS2. Through spectroscopic and microscopic investigation it is demonstrated that SLS is capable of producing MoS2 with a wafer-scale (~10 cm) layer-number uniformity of more than 90%, which when used as the active layer in a top-gated field-effect transistor, produces an on/off ratio as high as 10(8). This process is also shown to be applicable to WSe2, with a PN diode fabricated from a MoS2/WSe2 heterostructure exhibiting gate-tunable rectifying characteristics.
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea.
authors.forename: Youngjun
authors.initials: Y
authors.lastname: Kim
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea.
authors.forename: Jeong-Gyu
authors.initials: JG
authors.lastname: Song
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea.
authors.forename: Yong Ju
authors.initials: YJ
authors.lastname: Park
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Korea.
authors.forename: Gyeong Hee
authors.initials: GH
authors.lastname: Ryu
authors.affiliation: Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea.
authors.forename: Su Jeong
authors.initials: SJ
authors.lastname: Lee
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea.
authors.forename: Jin Sung
authors.initials: JS
authors.lastname: Kim
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea.
authors.forename: Pyo Jin
authors.initials: PJ
authors.lastname: Jeon
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea.
authors.forename: Chang Wan
authors.initials: CW
authors.lastname: Lee
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea.
authors.forename: Whang Je
authors.initials: WJ
authors.lastname: Woo
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea.
authors.forename: Taejin
authors.initials: T
authors.lastname: Choi
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea.
authors.forename: Hanearl
authors.initials: H
authors.lastname: Jung
authors.affiliation: Department of Materials Science and Engineering, Incheon National University, Incheon 406-772, Korea.
authors.forename: Han-Bo-Ram
authors.initials: HB
authors.lastname: Lee
authors.affiliation: Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea.
authors.forename: Jae-Min
authors.initials: JM
authors.lastname: Myoung
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea.
authors.forename: Seongil
authors.initials: S
authors.lastname: Im
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Korea.
authors.forename: Zonghoon
authors.initials: Z
authors.lastname: Lee
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea.
authors.forename: Jong-Hyun
authors.initials: JH
authors.lastname: Ahn
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea.
authors.forename: Jusang
authors.initials: J
authors.lastname: Park
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea.
authors.forename: Hyungjun
authors.initials: H
authors.lastname: Kim