title: Manifestation of Structure of Electron Bands in Double-Resonant Raman Spectra of Single-Walled Carbon Nanotubes.
abstract: Micro-Raman spectra of single-walled carbon nanotubes in the range of two-phonon 2D bands are investigated in detail. The fine structure of two-phonon 2D bands in the low-temperature Raman spectra of the mixture and individual single-walled carbon nanotubes is considered as the reflection of structure of their π-electron zones. The dispersion behavior of 2D band fine structure components in the resonant Raman spectra of single-walled carbon nanotube mixture is studied depending on the energy of excitating photons. The role of incoming and outgoing electron-phonon resonances in the formation of 2D band fine structure in Raman spectra of single-walled carbon nanotubes is analyzed. The similarity of dispersion behavior of 2D phonon bands in single-walled carbon nanotubes, one-layer graphene, and bulk graphite is discussed.
authors.affiliation: V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028, Kyiv, Ukraine. chig-ua@rambler.ru.
authors.forename: Yurii
authors.initials: Y
authors.lastname: Stubrov
authors.affiliation: V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028, Kyiv, Ukraine.
authors.forename: Andrii
authors.initials: A
authors.lastname: Nikolenko
authors.affiliation: Department of Physics, Kyiv National Taras Shevchenko University, 64 Volodymyrs'ka str., 01601, Kyiv, Ukraine.
authors.forename: Viktor
authors.initials: V
authors.lastname: Gubanov
authors.affiliation: V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028, Kyiv, Ukraine.
authors.forename: Viktor
authors.initials: V
authors.lastname: Strelchuk
keywords: Arc-discharge method; Double electron-phonon resonance mechanism (DR); Graphene; Resonance Raman spectroscopy; Single-walled carbon nanotube (SWCNT); Trigonal warping; Van Hove singularities