title: Simulation of synaptic short-term plasticity using Ba(CF3SO3)2-doped polyethylene oxide electrolyte film.
abstract: The simulation of synaptic plasticity using new materials is critical in the study of brain-inspired computing. Devices composed of Ba(CF3SO3)2-doped polyethylene oxide (PEO) electrolyte film were fabricated and with pulse responses found to resemble the synaptic short-term plasticity (STP) of both short-term depression (STD) and short-term facilitation (STF) synapses. The values of the charge and discharge peaks of the pulse responses did not vary with input number when the pulse frequency was sufficiently low(~1 Hz). However, when the frequency was increased, the charge and discharge peaks decreased and increased, respectively, in gradual trends and approached stable values with respect to the input number. These stable values varied with the input frequency, which resulted in the depressed and potentiated weight modifications of the charge and discharge peaks, respectively. These electrical properties simulated the high and low band-pass filtering effects of STD and STF, respectively. The simulations were consistent with biological results and the corresponding biological parameters were successfully extracted. The study verified the feasibility of using organic electrolytes to mimic STP.
authors.affiliation: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, People's Republic of China.|Centre for Brain Inspired Computing Research (CBICR), Tsinghua University, Beijing 100084, People's Republic of China.
authors.forename: C T
authors.initials: CT
authors.lastname: Chang
authors.affiliation: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, People's Republic of China.|Centre for Brain Inspired Computing Research (CBICR), Tsinghua University, Beijing 100084, People's Republic of China.
authors.forename: F
authors.initials: F
authors.lastname: Zeng
authors.affiliation: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, People's Republic of China.|Centre for Brain Inspired Computing Research (CBICR), Tsinghua University, Beijing 100084, People's Republic of China.
authors.forename: X J
authors.initials: XJ
authors.lastname: Li
authors.affiliation: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, People's Republic of China.|Centre for Brain Inspired Computing Research (CBICR), Tsinghua University, Beijing 100084, People's Republic of China.
authors.forename: W S
authors.initials: WS
authors.lastname: Dong
authors.affiliation: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, People's Republic of China.|Centre for Brain Inspired Computing Research (CBICR), Tsinghua University, Beijing 100084, People's Republic of China.
authors.forename: S H
authors.initials: SH
authors.lastname: Lu
authors.affiliation: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, People's Republic of China.
authors.forename: S
authors.initials: S
authors.lastname: Gao
authors.affiliation: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, People's Republic of China.
authors.forename: F
authors.initials: F
authors.lastname: Pan