title: Correlation Between the Raman Crystallinity of p-Type Micro-Crystalline Silicon Layer and Open Circuit Voltage of n-i-p Solar Cells.
abstract: This article mainly discusses the difference between p-i-n and n-i-p type solar cells. Their structural difference has an effect on cell performance, such as open circuit voltage and fill factor. Although the deposition conditions are the same for both p-i-n and n-i-p cases, the substrate layers for depositing p-type microcrystalline silicon layers differ. In n-i-p cells, the substrate layer is p-type amorphous silicon oxide layer; whereas, in p-i-n cells, the substrate layer is ZnO:Al. The interfacial change leads to a 12% difference in the crystallinity of the p-type microcrystalline silicon layers. When the p-type microcrystalline silicon layer's crystallinity was not sufficient to activate an internal electric field, the open circuit voltage and fill factor decreased 0.075 V and 7.36%, respectively. We analyzed this problem by comparing the Raman spectra, electrical conductivity, activation energy and solar cell performance. By adjusting the thickness of the p-type microcrystalline silicon layer, we increased the open circuit voltage of the n-i-p cell from 0.835 to 0.91 V.
authors.forename: Junhee
authors.initials: J
authors.lastname: Jung
authors.forename: Sunbo
authors.initials: S
authors.lastname: Kim
authors.forename: Jinjoo
authors.initials: J
authors.lastname: Park
authors.forename: Chonghoon
authors.initials: C
authors.lastname: Shin
authors.forename: Duy Phong
authors.initials: DP
authors.lastname: Pham
authors.forename: Jiwoong
authors.initials: J
authors.lastname: Kim
authors.forename: Sungyoun
authors.initials: S
authors.lastname: Chung
authors.forename: Youngseok
authors.initials: Y
authors.lastname: Lee
authors.forename: Junsin
authors.initials: J
authors.lastname: Yi