title: Anomalous temperature-dependent spin-valley polarization in monolayer WS2.
abstract: Single layers of transition metal dichalcogenides (TMDs) are direct gap semiconductors with nondegenerate valley indices. An intriguing possibility for these materials is the use of their valley index as an alternate state variable. Several limitations to such a utility include strong intervalley scattering, as well as multiparticle interactions leading to multiple emission channels. We prepare single-layer WS2 films such that the photoluminescence is from either the neutral or charged exciton (trion). After excitation with circularly polarized light, the neutral exciton emission has zero polarization. However, the trion emission has a large polarization (28%) at room temperature. The trion emission also has a unique, non-monotonic temperature dependence that is a consequence of the multiparticle nature of the trion. This temperature dependence enables us to determine that intervalley scattering, electron-hole radiative recombination, and Auger processes are the dominant mechanisms at work in this system. Because this dependence involves trion systems, one can use gate voltages to modulate the polarization (or intensity) emitted from TMD structures.
authors.affiliation: Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375.
authors.forename: A T
authors.initials: AT
authors.lastname: Hanbicki
authors.affiliation: University of Crete, Heraklion Crete, 71003, Greece.|Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology Hellas (FORTH), Heraklion Crete, 71110, Greece.
authors.forename: G
authors.initials: G
authors.lastname: Kioseoglou
authors.affiliation: Optical Sciences Division, Naval Research Laboratory, Washington, DC 20375.
authors.forename: M
authors.initials: M
authors.lastname: Currie
authors.affiliation: Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375.
authors.forename: C Stephen
authors.initials: CS
authors.lastname: Hellberg
authors.affiliation: Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375.
authors.forename: K M
authors.initials: KM
authors.lastname: McCreary
authors.affiliation: Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375.
authors.forename: A L
authors.initials: AL
authors.lastname: Friedman
authors.affiliation: Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375.
authors.forename: B T
authors.initials: BT
authors.lastname: Jonker