title: Band Structure and Effective Mass in Monolayer MoS2.
abstract: Monolayer transition-metal dichalcogenide is a very promising two-dimensional material for future transistor technology. Monolayer molybdenum disulfide (MoS2), owing to the unique electronic properties of its atomically thin two-dimensional layered structure, can be made into a high-performance metal-oxide-semiconductor field-effect transistor, or MOSFET. In this work, we focus on band structure and carrier mobility calculations for MoS2. We use the tight-binding method to calculate the band structure, including a consideration of the linear combination of different atomic orbitals, the interaction of neighboring atoms, and spin-orbit coupling for different tight-binding matrices. With information about the band structure, we can obtain the density of states, the effective mass, and other physical quantities. Carrier mobility using the Kubo-Greenwood formula is calculated based on the tight-binding band structure.
authors.forename: Ming-Ting
authors.initials: MT
authors.lastname: Wu
authors.forename: Jun-Wei
authors.initials: JW
authors.lastname: Fan
authors.forename: Kuan-Ting
authors.initials: KT
authors.lastname: Chen
authors.forename: Shu-Tong
authors.initials: ST
authors.lastname: Chang
authors.forename: Chung-Yi
authors.initials: CY
authors.lastname: Lin