title: Impact of Annealing-Induced Intermixing on the Electronic Level Alignment at the In2S3/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface.
abstract: The interface between a nominal In2S3 buffer and a Cu(In,Ga)Se2 (CIGSe) thin-film solar cell absorber was investigated by direct and inverse photoemission to determine the interfacial electronic structure. On the basis of a previously reported heavy intermixing at the interface (S diffuses into the absorber; Cu diffuses into the buffer; and Na diffuses through it), we determine here the band alignment at the interface. The results suggest that the pronounced intermixing at the In2S3/CIGSe interface leads to a favorable electronic band alignment, necessary for high-efficiency solar cell devices.
authors.affiliation: Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH , Hahn-Meitner-Platz 1, 14109 Berlin, Germany.|Institut für Physik und Chemie, Brandenburgische Technische Universität Cottbus-Senftenberg , Platz der Deutschen Einheit 1, 03046 Cottbus, Germany.|Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV) , 4505 Maryland Parkway, Las Vegas, Nevada 89154-4003, United States.
authors.forename: Marcus
authors.initials: M
authors.lastname: Bär
authors.affiliation: Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, Centre National de la Recherche Scientifique (CNRS) , 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France.
authors.forename: Nicolas
authors.initials: N
authors.lastname: Barreau
authors.affiliation: Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, Centre National de la Recherche Scientifique (CNRS) , 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France.
authors.forename: François
authors.initials: F
authors.lastname: Couzinié-Devy
authors.affiliation: Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV) , 4505 Maryland Parkway, Las Vegas, Nevada 89154-4003, United States.|Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology , Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany.|ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology , 76344 Eggenstein-Leopoldshafen, Germany.|Institute for Chemical Technology and Polymer Chemistry, Karlsruhe Institute of Technology , Engesserstraße 18/20, 76128 Karlsruhe, Germany.
authors.forename: Lothar
authors.initials: L
authors.lastname: Weinhardt
authors.affiliation: Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH , Hahn-Meitner-Platz 1, 14109 Berlin, Germany.
authors.forename: Regan G
authors.initials: RG
authors.lastname: Wilks
authors.affiliation: Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, Centre National de la Recherche Scientifique (CNRS) , 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France.
authors.forename: John
authors.initials: J
authors.lastname: Kessler
authors.affiliation: Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV) , 4505 Maryland Parkway, Las Vegas, Nevada 89154-4003, United States.|Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology , Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany.|ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology , 76344 Eggenstein-Leopoldshafen, Germany.|Institute for Chemical Technology and Polymer Chemistry, Karlsruhe Institute of Technology , Engesserstraße 18/20, 76128 Karlsruhe, Germany.
authors.forename: Clemens
authors.initials: C
authors.lastname: Heske
keywords: In2S3 buffer; band offset; chalcopyrite solar cell; intermixing; inverse photoemission