title: Properties of Electron-Beam Irradiated CuInSe2 Layers by Multi-Step Sputtering Method.
abstract: Typically, CuInSe2 (CIS) based thin films for photovoltaic devices are deposited by co-evaporation or by deposition of the metals, followed by treatment in a selenium environment. This article describes CIS films that are instead deposited by DC and RF magnetron sputtering from binary Cu2Se and In2Se3 targets without the supply of selenium. As a novel method, electron beam annealing was used for crystallization of Cu2Se/In2Se3 stacked precursors. The surface, cross-sectional morphology, and compositional ratio of CIS films were investigated to confirm the possibility in crystallization without any addition of selenium. Our work demonstrates that the e-beam annealing method can be a good candidate for the rapid crystallization of Cu-In-Se sputtered precursors.
authors.forename: Chae-Woong
authors.initials: CW
authors.lastname: Kim
authors.forename: Jin Hyeok
authors.initials: JH
authors.lastname: Kim
authors.forename: Chaehwan
authors.initials: C
authors.lastname: Jeong