title: Intrinsic interface states in InAs-AlSb heterostructures.
abstract: We examine the formation of intrinsic interface states bound to the plane of In-Sb chemical bonds at InAs-AlSb interfaces. Careful parameterization of the bulk materials in the frame of the extended-basis spds (*)tight-binding model and recent progress in predictions of band offsets severely limit the span of tight-binding parameters describing this system. We find that a heavy-hole-like interface state bound to the plane of In-Sb bonds exists for a large range of values of the InSb-InAs band offset.
authors.affiliation: Laboratoire de Physico-chimie des Microstructures et Micro-systèmes, Institut Préparatoire aux Etudes Scientifiques et Techniques, BP51, 2070 La Marsa, Tunisia.
authors.forename: F
authors.initials: F
authors.lastname: Raouafi
authors.forename: R
authors.initials: R
authors.lastname: Benchamekh
authors.forename: M O
authors.initials: MO
authors.lastname: Nestoklon
authors.forename: J-M
authors.initials: JM
authors.lastname: Jancu
authors.forename: P
authors.initials: P
authors.lastname: Voisin