title: Tunable Graphene-GaSe Dual Heterojunction Device.
abstract: A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.
authors.affiliation: Department of Micro- and Nanosciences, Aalto University, Tietotie 3, 02150, Espoo, Finland.
authors.forename: Wonjae
authors.initials: W
authors.lastname: Kim
authors.affiliation: Department of Micro- and Nanosciences, Aalto University, Tietotie 3, 02150, Espoo, Finland.
authors.forename: Changfeng
authors.initials: C
authors.lastname: Li
authors.affiliation: Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, Campus UAB, E-08193, Bellaterra, Spain.
authors.forename: Ferney A
authors.initials: FA
authors.lastname: Chaves
authors.affiliation: Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, Campus UAB, E-08193, Bellaterra, Spain.
authors.forename: David
authors.initials: D
authors.lastname: Jiménez
authors.affiliation: Technische Universität Chemnitz, Institut für Physik, Reichenhainer Str. 70, 09126, Chemnitz, Germany.
authors.forename: Raul D
authors.initials: RD
authors.lastname: Rodriguez
authors.affiliation: Department of Micro- and Nanosciences, Aalto University, Tietotie 3, 02150, Espoo, Finland.
authors.forename: Jannatul
authors.initials: J
authors.lastname: Susoma
authors.affiliation: Keysight Technologies, Lyoner Strasse 20, 60528, Frankfurt, Germany.
authors.forename: Matthias A
authors.initials: MA
authors.lastname: Fenner
authors.affiliation: Department of Micro- and Nanosciences, Aalto University, Tietotie 3, 02150, Espoo, Finland.
authors.forename: Harri
authors.initials: H
authors.lastname: Lipsanen
authors.affiliation: Department of Micro- and Nanosciences, Aalto University, Tietotie 3, 02150, Espoo, Finland.
authors.forename: Juha
authors.initials: J
authors.lastname: Riikonen
keywords: GaSe; Schottky; graphene; heterojunctions; two-dimensional materials