title: Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System.
abstract: Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12,000 cm(2)·V(-1)·s(-1). Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb "nanosails" as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.
authors.affiliation: Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain.
authors.forename: María
authors.initials: M
authors.lastname: de la Mata
authors.affiliation: Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq, France.|Materials Research and Technology (MRT) Department, Luxembourg Institute of Science and Technology (LIST) , 5, avenue des Hauts-Fourneaux, L-4362 Esch-sur-Alzette, Luxembourg.
authors.forename: Renaud
authors.initials: R
authors.lastname: Leturcq
authors.affiliation: CNRS-Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), Université de Toulouse , 7 avenue du colonel Roche, 31400 Toulouse, France.
authors.forename: Sébastien R
authors.initials: SR
authors.lastname: Plissard
authors.affiliation: Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq, France.
authors.forename: Chloé
authors.initials: C
authors.lastname: Rolland
authors.affiliation: Laboratorio de Microscopías Avanzadas (LMA), Instituto de Nanociencia de Aragon (INA) -ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza , 50018 Zaragoza, Spain.
authors.forename: César
authors.initials: C
authors.lastname: Magén
authors.affiliation: Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain.|Institució Catalana de Recerca i Estudis Avançats (ICREA), 08010 Barcelona, Catalonia, Spain.
authors.forename: Jordi
authors.initials: J
authors.lastname: Arbiol
authors.affiliation: Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d'Ascq, France.|Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 0200, Australia.
authors.forename: Philippe
authors.initials: P
authors.lastname: Caroff
keywords: Cs-corrected scanning transmission electron microscopy; Hall measurements; III−V semiconductor; molecular beam epitaxy; nanowires; quantum point contact