title: Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation.
abstract: Here a seedless and template-free technique is demonstrated to scalably grow bismuth nanowires, through thermal evaporation in high vacuum at RT. Conventionally reserved for the fabrication of metal thin films, thermal evaporation deposits bismuth into an array of vertical single crystalline nanowires over a flat thin film of vanadium held at RT, which is freshly deposited by magnetron sputtering or thermal evaporation. By controlling the temperature of the growth substrate the length and width of the nanowires can be tuned over a wide range. Responsible for this novel technique is a previously unknown nanowire growth mechanism that roots in the mild porosity of the vanadium thin film. Infiltrated into the vanadium pores, the bismuth domains (~ 1 nm) carry excessive surface energy that suppresses their melting point and continuously expels them out of the vanadium matrix to form nanowires. This discovery demonstrates the feasibility of scalable vapor phase synthesis of high purity nanomaterials without using any catalysts.
authors.affiliation: Center for Functional Nanomaterials, Brookhaven National Laboratory; mzliu@bnl.gov.
authors.forename: Mingzhao
authors.initials: M
authors.lastname: Liu
authors.affiliation: Center for Functional Nanomaterials, Brookhaven National Laboratory.
authors.forename: Chang-Yong
authors.initials: CY
authors.lastname: Nam
authors.affiliation: Center for Functional Nanomaterials, Brookhaven National Laboratory.
authors.forename: Lihua
authors.initials: L
authors.lastname: Zhang
mesh_terms: D001729:Bismuth / Q000737:chemistry*; D003460:Crystallization / Q000379:methods; D006361:Heating; D008422:Materials Testing; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry*; D010316:Particle Size; D014618:Vacuum; D014835:Volatilization
chemical_list: D001729:Bismuth