title: Highly Efficient Photocurrent Generation from Nanocrystalline Graphene-Molybdenum Disulfide Lateral Interfaces.
abstract: Nanocrystalline graphene-MoS2 lateral interfaces reveal distinct current-rectified characteristics, similar to a p-n diode, that are seldom observed for the monolayer graphene-MoS2 vertical interface. It is found that the lateral interfaces can increase the Schottky barrier between the graphene and the MoS2 because the metallic MoS2 edges cause charge reordering and a potential shift in the graphene.
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea.
authors.forename: Kang Hyuck
authors.initials: KH
authors.lastname: Lee
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea.
authors.forename: Tae-Ho
authors.initials: TH
authors.lastname: Kim
authors.affiliation: Samsung Advanced Institute of Technology (SAIT), Yongin, 446-712, Republic of Korea.
authors.forename: Hyun-Jin
authors.initials: HJ
authors.lastname: Shin
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea.|SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), SKKU-SAMSUNG Graphene Center, Sungkyunkwan University (SKKU), Suwon, 440-746, Republic of Korea.
authors.forename: Sang-Woo
authors.initials: SW
authors.lastname: Kim
keywords: Schottky barrier change; charge reordering; lateral interfaces; molybdenium disulfide; nanocrystalline graphene