title: Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.
abstract: Flexible synthesized MoS2 transistors are advanced to perform at GHz speeds. An intrinsic cutoff frequency of 5.6 GHz is achieved and analog circuits are realized. Devices are mechanically robust for 10,000 bending cycles.
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA.
authors.forename: Hsiao-Yu
authors.initials: HY
authors.lastname: Chang
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA.
authors.forename: Maruthi Nagavalli
authors.initials: MN
authors.lastname: Yogeesh
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA.
authors.forename: Rudresh
authors.initials: R
authors.lastname: Ghosh
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA.
authors.forename: Amritesh
authors.initials: A
authors.lastname: Rai
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA.
authors.forename: Atresh
authors.initials: A
authors.lastname: Sanne
authors.affiliation: Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin, Austin, TX, 78712, USA.
authors.forename: Shixuan
authors.initials: S
authors.lastname: Yang
authors.affiliation: Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin, Austin, TX, 78712, USA.
authors.forename: Nanshu
authors.initials: N
authors.lastname: Lu
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA.
authors.forename: Sanjay Kumar
authors.initials: SK
authors.lastname: Banerjee
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA.
authors.forename: Deji
authors.initials: D
authors.lastname: Akinwande
keywords: 2D materials; CVD-growth; flexible electronics; molybdenum disulfide; radio frequency