title: Photoelectric properties in metal ion modified DNA nanostructure.
abstract: Due to specific or as designed self-assembly, DNA nanostructures gaining popularity in various nanoscale electronic applications. Herein, a novel divalent metal ion-DNA complex known as M-DNA have been investigated for its photoelectric characteristics. The increased conductivity of M-DNA thin films is attributed to the metal ion electrical and optical properties. The gate voltage effect along with illumination on the conductivity of M-DNA demonstrates that M-DNA can be used as an active element of a field-effect transistor. The Zn DNA shows maximum conductivity of 300μS/cm at 480 nm light illumination suggest that M-DNA can be utilized in nano-opto-electronics and bio-sensing applications.
authors.forename: Atul
authors.initials: A
authors.lastname: Kulkarni
authors.forename: Sreekantha Reddy
authors.initials: SR
authors.lastname: Dugasani
authors.lastname: Jang Ah Kim
authors.lastname: Kim
authors.lastname: Sung Ha Park
authors.lastname: Taesung Kim
mesh_terms: D004247:DNA; D008670:Metals; D049329:Nanostructures
chemical_list: D008670:Metals; D004247:DNA