title: In Situ Fabrication of Vertical Multilayered MoS2/Si Homotype Heterojunction for High-Speed Visible-Near-Infrared Photodetectors.
abstract: c2D transition metal dichalcogenides (TMDCs)-based heterostructures have been demonstrated to achieve superior light absorption and photovoltaic effects theoretically and experimentally, making them extremely attractive for realizing optoelectronic devices. In this work, a vertical multilayered n-MoS2/n-silicon homotype heterojunction is fabricated, which takes advantage of multilayered MoS2 grown in situ directly on plane silicon. Electrical characterization reveals that the resultant device exhibits high sensitivity to visible-near-infrared light with responsivity up to 11.9 A W(-1). Notably, the photodetector shows high-speed response time of ≈ 30.5 µs/71.6 µs and capability to work under higher pulsed light irradiation approaching 100 kHz. The high response speed could be attributed to a good quality of the multilayer MoS2 , as well as in situ device fabrication process. These findings suggest that the multilayered MoS2 /Si homotype heterojunction have great potential application in the field of visible-near-infrared detection and might be used as elements for construction of high-speed integrated optoelectronic sensor circuitry.
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, HefeiAnhui, 230009, P. R. China.|School of Electronic Science and Applied Physics, Hefei University of Technology, HefeiAnhui, 230009, P. R. China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, HefeiAnhui, 230009, P. R. China.
authors.forename: Yongqiang
authors.initials: Y
authors.lastname: Yu
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, HefeiAnhui, 230009, P. R. China.
authors.forename: Longfei
authors.initials: L
authors.lastname: Mi
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, HefeiAnhui, 230009, P. R. China.
authors.forename: Hui
authors.initials: H
authors.lastname: Wang
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, HefeiAnhui, 230009, P. R. China.|School of Electronic Science and Applied Physics, Hefei University of Technology, HefeiAnhui, 230009, P. R. China.
authors.forename: Zhifeng
authors.initials: Z
authors.lastname: Zhu
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, HefeiAnhui, 230009, P. R. China.
authors.forename: Qingyun
authors.initials: Q
authors.lastname: Wu
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, HefeiAnhui, 230009, P. R. China.|School of Electronic Science and Applied Physics, Hefei University of Technology, HefeiAnhui, 230009, P. R. China.
authors.forename: Yugang
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, HefeiAnhui, 230009, P. R. China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Jiang
keywords: fast responses; homotype heterojunctions; molybdenum disulfide; photodetectors