title: Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors.
abstract: A unique design of a hexagonal boron nitride (h-BN)/HfO2 dielectric heterostructure stack is demonstrated, with few-layer h-BN to alleviate the surface optical phonon scattering, followed by high-κ HfO2 deposition to suppress Coulombic impurity scattering so that high-performance top-gated two-dimensional semiconductor transistors are achieved. Furthermore, this dielectric stack can also be extended to GaN-based transistors to enhance their performance.
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Xuming
authors.initials: X
authors.lastname: Zou
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu, 30010, Taiwan.
authors.forename: Chun-Wei
authors.initials: CW
authors.lastname: Huang
authors.affiliation: Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, China.
authors.forename: Lifeng
authors.initials: L
authors.lastname: Wang
authors.affiliation: Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, China.
authors.forename: Long-Jing
authors.initials: LJ
authors.lastname: Yin
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Wenqing
authors.initials: W
authors.lastname: Li
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Jingli
authors.initials: J
authors.lastname: Wang
authors.affiliation: Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, China.
authors.forename: Bin
authors.initials: B
authors.lastname: Wu
authors.affiliation: Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, China.
authors.forename: Yunqi
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Physics Department, Xiamen University, Xiamen, 361005, China.
authors.forename: Qian
authors.initials: Q
authors.lastname: Yao
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Changzhong
authors.initials: C
authors.lastname: Jiang
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu, 30010, Taiwan.
authors.forename: Wen-Wei
authors.initials: WW
authors.lastname: Wu
authors.affiliation: Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, China.
authors.forename: Lin
authors.initials: L
authors.lastname: He
authors.affiliation: Physics Department, Xiamen University, Xiamen, 361005, China.
authors.forename: Shanshan
authors.initials: S
authors.lastname: Chen
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR, China.
authors.forename: Johnny C
authors.initials: JC
authors.lastname: Ho
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Liao
keywords: 2D materials; boron nitride; dielectric engineering; heterostructures; transistors