title: Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.
abstract: The synthesis of few-layer tungsten diselenide (WSe2) via chemical vapor deposition typically results in highly non-uniform thickness due to nucleation initiated growth of triangular domains. In this work, few-layer p-type WSe2 with wafer-scale thickness and electrical uniformity is synthesized through direct selenization of thin films of e-beam evaporated W on SiO2 substrates. Raman maps over a large area of the substrate show small variations in the main peak position, indicating excellent thickness uniformity across several square centimeters. Additionally, field-effect transistors fabricated from the wafer-scale WSe2 films demonstrate uniform electrical performance across the substrate. The intrinsic field-effect mobility of the films at a carrier concentration of 3 × 10(12) cm(-2) is 10 cm(2) V(-1) s(-1). The unprecedented uniformity of the WSe2 on wafer-scale substrates provides a substantial step towards producing manufacturable materials that are compatible with conventional semiconductor fabrication processes.
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA and Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332, USA. philip.campbell@gatech.edu.
authors.forename: Philip M
authors.initials: PM
authors.lastname: Campbell
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
authors.forename: Alexey
authors.initials: A
authors.lastname: Tarasov
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
authors.forename: Corey A
authors.initials: CA
authors.lastname: Joiner
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
authors.forename: Meng-Yen
authors.initials: MY
authors.lastname: Tsai
authors.affiliation: George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
authors.forename: Georges
authors.initials: G
authors.lastname: Pavlidis
authors.affiliation: George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
authors.forename: Samuel
authors.initials: S
authors.lastname: Graham
authors.affiliation: Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332, USA. philip.campbell@gatech.edu.
authors.forename: W Jud
authors.initials: WJ
authors.lastname: Ready
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
authors.forename: Eric M
authors.initials: EM
authors.lastname: Vogel