title: Infrared Photodetection Based on Colloidal Quantum-Dot Films with High Mobility and Optical Absorption up to THz.
abstract: Infrared thermal imaging devices rely on narrow band gap semiconductors grown by physical methods such as molecular beam epitaxy and chemical vapor deposition. These technologies are expensive, and infrared detectors remain limited to defense and scientific applications. Colloidal quantum dots (QDs) offer a low cost alternative to infrared detector by combining inexpensive synthesis and an ease of processing, but their performances are so far limited, in terms of both wavelength and sensitivity. Herein we propose a new generation of colloidal QD-based photodetectors, which demonstrate detectivity improved by 2 orders of magnitude, and optical absorption that can be continuously tuned between 3 and 20 μm. These photodetectors are based on the novel synthesis of n-doped HgSe colloidal QDs whose size can be tuned continuously between 5 and 40 nm, and on their assembly into solid nanocrystal films with mobilities that can reach up to 100 cm(2) V(-1) s(-1). These devices can be operated at room temperature with the same level of performance as the previous generation of devices when operated at liquid nitrogen temperature. HgSe QDs can be synthesized in large scale (>10 g per batch), and we show that HgSe films can be processed to form a large scale array of pixels. Taken together, these results pave the way for the development of the next generation mid- and far-infrared low-cost detectors and camera.
authors.affiliation: Nexdot , 10 rue Vauquelin, 75005 Paris, France.|Institut des NanoSciences de Paris, UPMC-UMR CNRS 7588 , 4 place Jussieu, 75252 Paris CEDEX 05, France.
authors.forename: Emmanuel
authors.initials: E
authors.lastname: Lhuillier
authors.affiliation: Nexdot , 10 rue Vauquelin, 75005 Paris, France.|Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France.
authors.forename: Marion
authors.initials: M
authors.lastname: Scarafagio
authors.affiliation: Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France.
authors.forename: Patrick
authors.initials: P
authors.lastname: Hease
authors.affiliation: Nexdot , 10 rue Vauquelin, 75005 Paris, France.
authors.forename: Brice
authors.initials: B
authors.lastname: Nadal
authors.affiliation: Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France.
authors.forename: Hervé
authors.initials: H
authors.lastname: Aubin
authors.affiliation: Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France.
authors.forename: Xiang Zhen
authors.initials: XZ
authors.lastname: Xu
authors.affiliation: Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France.
authors.forename: Nicolas
authors.initials: N
authors.lastname: Lequeux
authors.affiliation: Laboratoire de Photonique et de Nanostructures, LPN/UPR20-CNRS , Route de Nozay, 91460 Marcoussis, France.
authors.forename: Gilles
authors.initials: G
authors.lastname: Patriarche
authors.affiliation: Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France.
authors.forename: Sandrine
authors.initials: S
authors.lastname: Ithurria
authors.affiliation: Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France.
authors.forename: Benoit
authors.initials: B
authors.lastname: Dubertret
keywords: HgSe; colloidal quantum dot; electrolyte gating; mid- and far-infrared; photoresponse; transistor