title: Epitaxial Growth of Room-Temperature Ferromagnetic MnAs Segments on GaAs Nanowires via Sequential Crystallization.
abstract: We investigate the incorporation of manganese into self-catalyzed GaAs nanowires grown in molecular beam epitaxy. Our study reveals that Mn accumulates in the liquid Ga droplet and that no significant incorporation into the nanowire is observed. Using a sequential crystallization of the droplet, we then demonstrate a deterministic and epitaxial growth of MnAs segments at the nanowire tip. This technique may allow the seamless integration of multiple room-temperature ferromagnetic segments into GaAs nanowires with high-crystalline quality.
authors.affiliation: Institut für Experimentelle und Angewandte Physik, Universität Regensburg , D-93040 Regensburg, Germany.
authors.forename: Joachim
authors.initials: J
authors.lastname: Hubmann
authors.affiliation: Institut für Experimentelle und Angewandte Physik, Universität Regensburg , D-93040 Regensburg, Germany.
authors.forename: Benedikt
authors.initials: B
authors.lastname: Bauer
authors.affiliation: Institut für Experimentelle und Angewandte Physik, Universität Regensburg , D-93040 Regensburg, Germany.
authors.forename: Helmut S
authors.initials: HS
authors.lastname: Körner
authors.affiliation: Institut für Experimentelle und Angewandte Physik, Universität Regensburg , D-93040 Regensburg, Germany.
authors.forename: Stephan
authors.initials: S
authors.lastname: Furthmeier
authors.affiliation: Institut für Experimentelle und Angewandte Physik, Universität Regensburg , D-93040 Regensburg, Germany.
authors.forename: Martin
authors.initials: M
authors.lastname: Buchner
authors.affiliation: Institut für Experimentelle und Angewandte Physik, Universität Regensburg , D-93040 Regensburg, Germany.
authors.forename: Günther
authors.initials: G
authors.lastname: Bayreuther
authors.affiliation: Institut für Experimentelle und Angewandte Physik, Universität Regensburg , D-93040 Regensburg, Germany.
authors.forename: Florian
authors.initials: F
authors.lastname: Dirnberger
authors.affiliation: Institut für Experimentelle und Angewandte Physik, Universität Regensburg , D-93040 Regensburg, Germany.
authors.forename: Dieter
authors.initials: D
authors.lastname: Schuh
authors.affiliation: Institut für Experimentelle und Angewandte Physik, Universität Regensburg , D-93040 Regensburg, Germany.
authors.forename: Christian H
authors.initials: CH
authors.lastname: Back
authors.affiliation: Institut für Experimentelle und Angewandte Physik, Universität Regensburg , D-93040 Regensburg, Germany.
authors.forename: Josef
authors.initials: J
authors.lastname: Zweck
authors.affiliation: Institut für Experimentelle und Angewandte Physik, Universität Regensburg , D-93040 Regensburg, Germany.
authors.forename: Elisabeth
authors.initials: E
authors.lastname: Reiger
authors.affiliation: Institut für Experimentelle und Angewandte Physik, Universität Regensburg , D-93040 Regensburg, Germany.
authors.forename: Dominique
authors.initials: D
authors.lastname: Bougeard
keywords: GaAs nanowire; MnAs segment; deterministic epitaxial growth; room-temperature ferromagnet; sequential crystallization; single-domain