title: Enhanced luminescence from GaN nanopillar arrays fabricated using a top-down process.
abstract: We report the fabrication of GaN nanopillar arrays with good structural uniformity using the top-down approach. The photoluminescence intensity from the nanopillar arrays is enhanced compared to the epilayer. We use finite difference time domain simulations to show that the enhancement in photoluminescence intensity from the nanopillar arrays is a result of anti-reflection properties of the arrays that result in enhanced light absorption and increase light extraction efficiency compared to the epilayer. The measured quantum efficiency of the nanopillars is comparable to that of an epitaxially grown GaN epilayer.
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia.
authors.forename: N Parvathala
authors.initials: NP
authors.lastname: Reddy
authors.forename: Shagufta
authors.initials: S
authors.lastname: Naureen
authors.forename: Sudha
authors.initials: S
authors.lastname: Mokkapati
authors.forename: Kaushal
authors.initials: K
authors.lastname: Vora
authors.forename: Naeem
authors.initials: N
authors.lastname: Shahid
authors.forename: Fouad
authors.initials: F
authors.lastname: Karouta
authors.forename: Hark Hoe
authors.initials: HH
authors.lastname: Tan
authors.forename: Chennupati
authors.initials: C
authors.lastname: Jagadish