title: Vacuum Ultraviolet Treatment of Self-Assembled Monolayers: A Tool for Understanding Growth and Tuning Charge Transport in Organic Field-Effect Transistors.
abstract: Vacuum ultraviolet irradiation is used as a tool to systematically study the morphology, growth, and performance of small-molecule organic field-effect transistors. The surface energy can be carefully and precisely tuned by varying the dose of irradiation, allowing for the systematic study of the growth of an emerging organic semiconductor. This technique helps to methodically control the morphology and performance of organic semiconductors.
authors.affiliation: Department of Electrical Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
authors.forename: Pollawat
authors.initials: P
authors.lastname: Prisawong
authors.affiliation: Department of Electrical Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
authors.forename: Peter
authors.initials: P
authors.lastname: Zalar
authors.affiliation: Department of Electrical Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
authors.forename: Amir
authors.initials: A
authors.lastname: Reuveny
authors.affiliation: Department of Electrical Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
authors.forename: Naoji
authors.initials: N
authors.lastname: Matsuhisa
authors.affiliation: Department of Electrical Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
authors.forename: Wonryung
authors.initials: W
authors.lastname: Lee
authors.affiliation: Department of Electrical Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
authors.forename: Tomoyuki
authors.initials: T
authors.lastname: Yokota
authors.affiliation: Department of Electrical Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
authors.forename: Takao
authors.initials: T
authors.lastname: Someya
keywords: dielectrics; organic field-effect transistors; self-assembly; structure-property relationships; thin films