title: Study of Graphene-based 2D-Heterostructure Device Fabricated by All-Dry Transfer Process.
abstract: We developed a technique for transferring graphene and hexagonal boron nitride (hBN) in dry conditions for fabrication of van der Waals heterostructures. The graphene layer was encapsulated between two hBN layers so that it was kept intact during fabrication of the device. For comparison, we also fabricated the devices containing graphene on SiO2/Si wafer and graphene on hBN. Electrical properties of the devices were investigated at room temperature. The mobility of the graphene on SiO2 devices and graphene on hBN devices were 15,000 and 37,000 cm(2) V(-1) s(-1), respectively, while the mobility of the sandwich structure device reached the highest value of ∼100,000 cm(2) V(-1) s(-1), at room temperature. The electrical measurements of the samples were carried out in air and vacuum environments. We found that the electrical properties of the encapsulated graphene devices remained at a similar level both in a vacuum and in air, whereas the properties of the graphene without encapsulation were influenced by the external environment.
authors.affiliation: Faculty of Nanotechnology & Advanced Materials, HMC, and GRI, Sejong University , Seoul 143-747, South Korea.
authors.forename: Dung Hoang
authors.initials: DH
authors.lastname: Tien
authors.affiliation: Faculty of Nanotechnology & Advanced Materials, HMC, and GRI, Sejong University , Seoul 143-747, South Korea.
authors.forename: Jun-Young
authors.initials: JY
authors.lastname: Park
authors.affiliation: Faculty of Nanotechnology & Advanced Materials, HMC, and GRI, Sejong University , Seoul 143-747, South Korea.
authors.forename: Ki Buem
authors.initials: KB
authors.lastname: Kim
authors.affiliation: Faculty of Nanotechnology & Advanced Materials, HMC, and GRI, Sejong University , Seoul 143-747, South Korea.
authors.forename: Naesung
authors.initials: N
authors.lastname: Lee
authors.affiliation: Faculty of Nanotechnology & Advanced Materials, HMC, and GRI, Sejong University , Seoul 143-747, South Korea.
authors.forename: Taekjib
authors.initials: T
authors.lastname: Choi
authors.affiliation: Department of Physics, Harvard University , Cambridge, Massachusetts 02138, United States.
authors.forename: Philip
authors.initials: P
authors.lastname: Kim
authors.affiliation: National Institute of Materials Science , Ibaraki 305-0044, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Taniguchi
authors.affiliation: National Institute of Materials Science , Ibaraki 305-0044, Japan.
authors.forename: Kenji
authors.initials: K
authors.lastname: Watanabe
authors.affiliation: Faculty of Nanotechnology & Advanced Materials, HMC, and GRI, Sejong University , Seoul 143-747, South Korea.
authors.forename: Yongho
authors.initials: Y
authors.lastname: Seo
keywords: 2D materials; graphene; graphene transfer; mobility; sandwich structure