title: Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals.
abstract: High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm(2)/Vs field-effect mobility, high ION/IOFF of 2.3 × 10(7), small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.
authors.affiliation: Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
authors.forename: Chen Wei
authors.initials: CW
authors.lastname: Shih
authors.affiliation: Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
authors.forename: Albert
authors.initials: A
authors.lastname: Chin
authors.affiliation: Depatment of Materials Science &Engineering National Taiwan University, Taipei 10617, Taiwan.
authors.forename: Chun Fu
authors.initials: CF
authors.lastname: Lu
authors.affiliation: Depatment of Materials Science &Engineering National Taiwan University, Taipei 10617, Taiwan.
authors.forename: Wei Fang
authors.initials: WF
authors.lastname: Su