title: Single-crystalline ZnO sheet Source-Gated Transistors.
abstract: Due to their fabrication simplicity, fully compatible with low-cost large-area device assembly strategies, source-gated transistors (SGTs) have received significant research attention in the area of high-performance electronics over large area low-cost substrates. While usually based on either amorphous or polycrystalline silicon (α-Si and poly-Si, respectively) thin-film technologies, the present work demonstrate the assembly of SGTs based on single-crystalline ZnO sheet (ZS) with asymmetric ohmic drain and Schottky source contacts. Electrical transport studies of the fabricated devices show excellent field-effect transport behaviour with abrupt drain current saturation (IDS(SAT)) at low drain voltages well below 2 V, even at very large gate voltages. The performance of a ZS based SGT is compared with a similar device with ohmic source contacts. The ZS SGT is found to exhibit much higher intrinsic gain, comparable on/off ratio and low off currents in the sub-picoamp range. This approach of device assembly may form the technological basis for highly efficient low-power analog and digital electronics using ZnO and/or other semiconducting nanomaterial.
authors.affiliation: Université François Rabelais de Tours, CNRS, GREMAN UMR 7347, 16, rue pierre et marie Curie, 37071 Tours, France.
authors.forename: A S
authors.initials: AS
authors.lastname: Dahiya
authors.affiliation: Université François Rabelais de Tours, CNRS, GREMAN UMR 7347, 16, rue pierre et marie Curie, 37071 Tours, France.
authors.forename: C
authors.initials: C
authors.lastname: Opoku
authors.affiliation: Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
authors.forename: R A
authors.initials: RA
authors.lastname: Sporea
authors.affiliation: Université François Rabelais de Tours, CNRS, GREMAN UMR 7347, 16, rue pierre et marie Curie, 37071 Tours, France.
authors.forename: B
authors.initials: B
authors.lastname: Sarvankumar
authors.affiliation: Université François Rabelais de Tours, INSA-CVL, CNRS, GREMAN UMR 7347, 3 rue de la Chocolaterie, CS 23410, 41034 BLOIS Cedex, France.
authors.forename: G
authors.initials: G
authors.lastname: Poulin-Vittrant
authors.affiliation: Université François Rabelais de Tours, CNRS, GREMAN UMR 7347, 16, rue pierre et marie Curie, 37071 Tours, France.
authors.forename: F
authors.initials: F
authors.lastname: Cayrel
authors.affiliation: Université François Rabelais de Tours, CNRS, GREMAN UMR 7347, 16, rue pierre et marie Curie, 37071 Tours, France.
authors.forename: N
authors.initials: N
authors.lastname: Camara
authors.affiliation: Université François Rabelais de Tours, CNRS, GREMAN UMR 7347, 16, rue pierre et marie Curie, 37071 Tours, France.
authors.forename: D
authors.initials: D
authors.lastname: Alquier