title: Black Phosphorus-Zinc Oxide Nanomaterial Heterojunction for p-n Diode and Junction Field-Effect Transistor.
abstract: Black phosphorus (BP) nanosheet is two-dimensional (2D) semiconductor with distinct band gap and attracting recent attention from researches because it has some similarity to gapless 2D semiconductor graphene in the following two aspects: single element (P) for its composition and quite high mobilities depending on its fabrication conditions. Apart from several electronic applications reported with BP nanosheet, here we report for the first time BP nanosheet-ZnO nanowire 2D-1D heterojunction applications for p-n diodes and BP-gated junction field effect transistors (JFETs) with n-ZnO channel on glass. For these nanodevices, we take advantages of the mechanical flexibility of p-type conducting of BP and van der Waals junction interface between BP and ZnO. As a result, our BP-ZnO nanodimension p-n diode displays a high ON/OFF ratio of ∼10(4) in static rectification and shows kilohertz dynamic rectification as well while ZnO nanowire channel JFET operations are nicely demonstrated by BP gate switching in both electrostatics and kilohertz dynamics.
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea.
authors.forename: Pyo Jin
authors.initials: PJ
authors.lastname: Jeon
authors.affiliation: Center for Optoelectronic Materials and Devices Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST) , Hwarangno 14 gil 5, Seongbuk-gu, Seoul 02792, Korea.
authors.forename: Young Tack
authors.initials: YT
authors.lastname: Lee
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea.
authors.forename: June Yeong
authors.initials: JY
authors.lastname: Lim
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea.
authors.forename: Jin Sung
authors.initials: JS
authors.lastname: Kim
authors.affiliation: Center for Optoelectronic Materials and Devices Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST) , Hwarangno 14 gil 5, Seongbuk-gu, Seoul 02792, Korea.|Department of Nanomaterials and Nano Science, Korea University of Science and Technology (KUST) , Daejeon 34113, Korea.
authors.forename: Do Kyung
authors.initials: DK
authors.lastname: Hwang
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea.
authors.forename: Seongil
authors.initials: S
authors.lastname: Im
keywords: Black phosphorus; heterojunction; junction field-effect transistor; p−n diode; zinc oxide nanowire