title: Logic circuit prototypes for three-terminal magnetic tunnel junctions with mobile domain walls.
abstract: Spintronic computing promises superior energy efficiency and nonvolatility compared to conventional field-effect transistor logic. But, it has proven difficult to realize spintronic circuits with a versatile, scalable device design that is adaptable to emerging material physics. Here we present prototypes of a logic device that encode information in the position of a magnetic domain wall in a ferromagnetic wire. We show that a single three-terminal device can perform inverter and buffer operations. We demonstrate one device can drive two subsequent gates and logic propagation in a circuit of three inverters. This prototype demonstration shows that magnetic domain wall logic devices have the necessary characteristics for future computing, including nonlinearity, gain, cascadability, and room temperature operation.
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.|Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
authors.forename: J A
authors.initials: JA
authors.lastname: Currivan-Incorvia
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
authors.forename: S
authors.initials: S
authors.lastname: Siddiqui
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
authors.forename: S
authors.initials: S
authors.lastname: Dutta
authors.affiliation: Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305, USA.
authors.forename: E R
authors.initials: ER
authors.lastname: Evarts
authors.affiliation: Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
authors.forename: J
authors.initials: J
authors.lastname: Zhang
authors.affiliation: Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
authors.forename: D
authors.initials: D
authors.lastname: Bono
authors.affiliation: Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
authors.forename: C A
authors.initials: CA
authors.lastname: Ross
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
authors.forename: M A
authors.initials: MA
authors.lastname: Baldo