title: Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application.
abstract: This paper studies band-to-band tunneling in the transverse and lateral directions of van der Waals MoS2/WSe2 heterojunctions. We observe room-temperature negative differential resistance (NDR) in a heterojunction diode comprised of few-layer WSe2 stacked on multilayer MoS2. The presence of NDR is attributed to the lateral band-to-band tunneling at the edge of the MoS2/WSe2 heterojunction. The backward tunneling diode shows an average conductance slope of 75 mV/dec with a high curvature coefficient of 62 V(-1). Associated with the tunnel-diode characteristics, a positive-to-negative transconductance in the MoS2/WSe2 heterojunction transistors is observed. The transition is induced by strong interlayer coupling between the films, which results in charge density and energy-band modulation. The sign change in transconductance is particularly useful for multivalued logic (MVL) circuits, and we therefore propose and demonstrate for the first time an MVL-inverter that shows three levels of logic using one pair of p-type transistors.
authors.affiliation: Department of Electrical Engineering and Computer Sciences and ‡Department of Physics, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
authors.forename: Amirhasan
authors.initials: A
authors.lastname: Nourbakhsh
authors.affiliation: Department of Electrical Engineering and Computer Sciences and ‡Department of Physics, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
authors.forename: Ahmad
authors.initials: A
authors.lastname: Zubair
authors.affiliation: Department of Electrical Engineering and Computer Sciences and ‡Department of Physics, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
authors.forename: Mildred S
authors.initials: MS
authors.lastname: Dresselhaus
authors.affiliation: Department of Electrical Engineering and Computer Sciences and ‡Department of Physics, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
authors.forename: Tomás
authors.initials: T
authors.lastname: Palacios
keywords: Transition metal dichalcogenide; band-to-band tunneling; heterojunction transistor; multivalued logic; negative differential resistance