title: Torsional Deformations in Subnanometer MoS Interconnecting Wires.
abstract: We use aberration-corrected transmission electron microscopy to track the real time atomic level torsional dynamics of subnanometer wires of MoS interconnecting monolayer regions of MoS2. An in situ heating holder is used inside the transmission electron microscope to raise the temperature of the sample to 400 °C to increase crystallization rates of the wires and reduce contamination effects. Frequent rotational twisting of the MoS wire is captured, demonstrating elastic torsional deformation of the MoS wires. We show that torsional rotations of the crystal structure of the MoS wires depend upon the specific atomic structure of the anchored sections of the suspended wire and the number of unit cells that make up the wire length. Elastic torsional flexibility of the MoS wires is revealed to help their self-adapting connectivity during the structural changes. Plastic torsional deformation is also seen for MoS wires that contain defects in their crystal structure, which produce small scale rotational disorder within the wires. Upon removal of the defects, the wire returns back to pristine form. These results provide detailed insights into how the atomic structure of the anchoring site significantly influences the nanowire configurations relative to the monolayered MoS2.
authors.affiliation: Stanford Nano Shared Facilities, Stanford University , Stanford, California 94305-4045, United States.
authors.forename: Ai Leen
authors.initials: AL
authors.lastname: Koh
authors.affiliation: Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
authors.forename: Shanshan
authors.initials: S
authors.lastname: Wang
authors.affiliation: Department of Materials Science and Engineering, Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139-4307, United States.
authors.forename: Can
authors.initials: C
authors.lastname: Ataca
authors.affiliation: Department of Materials Science and Engineering, Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139-4307, United States.
authors.forename: Jeffrey C
authors.initials: JC
authors.lastname: Grossman
authors.affiliation: Department of Materials Science and Engineering, Stanford University , Stanford, California 94305-4034, United States.
authors.forename: Robert
authors.initials: R
authors.lastname: Sinclair
authors.affiliation: Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
authors.forename: Jamie H
authors.initials: JH
authors.lastname: Warner
keywords: DFT; MoS wire; TEM; aberration-corrected; nanowire