title: Valence band offset at the Si/SiSn interface by applying deep level transient spectroscopy.
abstract: A set of Si1-x Sn x /Si(001) quantum wells (QWs) is grown by applying molecular beam epitaxy. The activation energies of holes in these QWs are studied by deep-level transient spectroscopy. It is observed that the holes activation energies increase monotonically with the Sn fraction (x). The valence band offset between pseudomorphic Si1-x Sn x and Si obeys the dependence ΔE(v) = 1.69x eV, while the offset between the average valence bands of unstrained Si1-x Sn x /Si heterojunction was deduced and obeys the dependence ΔE(v(av)) = 1.27x eV.
authors.affiliation: Institute of Semiconductor- and Solid State Physics, Johannes Kepler Universität, A-4040 Linz, Austria.
authors.forename: Victor-Tapio
authors.initials: VT
authors.lastname: Rangel-Kuoppa
authors.forename: Alexander
authors.initials: A
authors.lastname: Tonkikh
authors.forename: Nikolay
authors.initials: N
authors.lastname: Zakharov
authors.forename: Christian
authors.initials: C
authors.lastname: Eisenschmidt
authors.forename: Peter
authors.initials: P
authors.lastname: Werner