title: Aligned ZnO nanorod arrays growth on GaN QDs for excellent optoelectronic applications.
abstract: Uniformly aligned ZnO nanorod (NR) arrays grown on GaN quantum dots (QDs) as preferred nucleation sites are imperative for designing field emission emitters, ultraviolet photodetectors and light-emitting diodes for a wide range of new optoelectronic applications. In a recent study (2015 Nanotechnology 26 415601), Qi et al reported a novel method of fabricating ZnO NRs arrays with uniform shape, the density of which is easily tunable by adjusting the density of GaN QDs. This approach opens a door to obtaining a combination of 0D and 1D structures for optoelectronic applications.
authors.affiliation: Shandong Key Laboratory of Optical Communication Science and Technology, School of Physical Science & Information Technology of Liaocheng University, 252059 Shandong Province, People's Republic of China. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, People's Republic of China.
authors.forename: Dandan
authors.initials: D
authors.lastname: Sang
authors.forename: Hongdong
authors.initials: H
authors.lastname: Li
authors.forename: Qinglin
authors.initials: Q
authors.lastname: Wang