title: Synthesis and characterization of P δ-layer in SiO2 by monolayer doping.
abstract: Achieving the required control of dopant distribution and selectivity for nanostructured semiconducting building block is a key issue for a large variety of applications. A promising strategy is monolayer doping (MLD), which consists in the creation of a well-ordered monolayer of dopant-containing molecules bonded to the surface of the substrate. In this work, we synthesize a P δ-layer embedded in a SiO2 matrix by MLD. Using a multi-technique approach based on time of flight secondary ion mass spectrometry (ToF-SIMS) and Rutherford backscattering spectrometry (RBS) analyses, we characterize the tuning of P dose as a function of the processing time and temperature. We found the proper conditions for a full grafting of the molecules, reaching a maximal dose of 8.3 × 10(14) atoms/cm(2). Moreover, using 1D rate equation model, we model P diffusion in SiO2 after annealing and we extract a P diffusivity in SiO2 of 1.5 × 10(17) cm(2) s(-1).
authors.affiliation: Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy. Università degli studi di Milano, Via Celoria 16, 20133 Milano, Italy.
authors.forename: Elisa
authors.initials: E
authors.lastname: Arduca
authors.forename: Massimo
authors.initials: M
authors.lastname: Mastromatteo
authors.forename: Davide
authors.initials: D
authors.lastname: De Salvador
authors.forename: Gabriele
authors.initials: G
authors.lastname: Seguini
authors.forename: Cristina
authors.initials: C
authors.lastname: Lenardi
authors.forename: Enrico
authors.initials: E
authors.lastname: Napolitani
authors.forename: Michele
authors.initials: M
authors.lastname: Perego