title: Anisotropic Effects on the Thermoelectric Properties of Highly Oriented Electrodeposited Bi2Te3 Films.
abstract: Highly oriented [1 1 0] Bi2Te3 films were obtained by pulsed electrodeposition. The structure, composition, and morphology of these films were characterized. The thermoelectric figure of merit (zT), both parallel and perpendicular to the substrate surface, were determined by measuring the Seebeck coefficient, electrical conductivity, and thermal conductivity in each direction. At 300 K, the in-plane and out-of-plane figure of merits of these Bi2Te3 films were (5.6 ± 1.2)·10(-2) and (10.4 ± 2.6)·10(-2), respectively.
authors.affiliation: IMM - Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid, Spain.
authors.forename: Cristina V
authors.initials: CV
authors.lastname: Manzano
authors.affiliation: IMM - Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid, Spain.
authors.forename: Begoña
authors.initials: B
authors.lastname: Abad
authors.affiliation: IMM - Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid, Spain.
authors.forename: Miguel
authors.initials: M
authors.lastname: Muñoz Rojo
authors.affiliation: Birck Nanotechnology Center, Purdue University, West Lafayette, IN, United States.
authors.forename: Yee Rui
authors.initials: YR
authors.lastname: Koh
authors.affiliation: Birck Nanotechnology Center, Purdue University, West Lafayette, IN, United States.|School of Mechanical Engineering, Purdue University, West Lafayette, IN, United States.
authors.forename: Stephen L
authors.initials: SL
authors.lastname: Hodson
authors.affiliation: Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya, EPSEVG, 08800 Vilanova i la Geltrú, Spain.
authors.forename: Antonio M
authors.initials: AM
authors.lastname: Lopez Martinez
authors.affiliation: Birck Nanotechnology Center, Purdue University, West Lafayette, IN, United States.|School of Mechanical Engineering, Purdue University, West Lafayette, IN, United States.
authors.forename: Xianfan
authors.initials: X
authors.lastname: Xu
authors.affiliation: Birck Nanotechnology Center, Purdue University, West Lafayette, IN, United States.
authors.forename: Ali
authors.initials: A
authors.lastname: Shakouri
authors.affiliation: Birck Nanotechnology Center, Purdue University, West Lafayette, IN, United States.|School of Mechanical Engineering, Purdue University, West Lafayette, IN, United States.|School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, United States.
authors.forename: Timothy D
authors.initials: TD
authors.lastname: Sands
authors.affiliation: Mechanical, Aerospace and Nuclear Engineering Department, Rensselaer Polytechnique Institute, Troy, New York 12180, USA.
authors.forename: Theodorian
authors.initials: T
authors.lastname: Borca-Tasciuc
authors.affiliation: IMM - Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid, Spain.
authors.forename: Marisol
authors.initials: M
authors.lastname: Martin-Gonzalez