title: Directed Assembly of Single Wall Carbon Nanotube Field Effect Transistors.
abstract: The outstanding electronic properties of single wall carbon nanotubes (SWCNTs) have made them prime candidates for future nanoelectronics technologies. One of the main obstacles to the implementation of advanced SWCNT electronics to date is the inability to arrange them in a manner suitable for complex circuits. Directed assembly of SWCNT segments onto lithographically patterned and chemically functionalized substrates is a promising way to organize SWCNTs in topologies that are amenable to integration for advanced applications, but the placement and orientational control required have not yet been demonstrated. We have developed a technique for assembling length sorted and chirality monodisperse DNA-wrapped SWCNT segments on hydrophilic lines patterned on a passivated oxidized silicon substrate. Placement of individual SWCNT segments at predetermined locations was achieved with nanometer accuracy. Three terminal electronic devices, consisting of a single SWCNT segment placed either beneath or on top of metallic source/drain electrodes were fabricated. Devices made with semiconducting nanotubes behaved as typical p-type field effect transistors (FETs), whereas devices made with metallic nanotubes had a finite resistance with little or no gate modulation. This scalable, high resolution approach represents an important step forward toward the potential implementation of complex SWCNT devices and circuits.
authors.affiliation: Department of Applied Physics and Applied Mathematics, Columbia University , New York, New York 10027, United States.
authors.forename: Erika
authors.initials: E
authors.lastname: Penzo
authors.affiliation: Department of Applied Physics and Applied Mathematics, Columbia University , New York, New York 10027, United States.
authors.forename: Matteo
authors.initials: M
authors.lastname: Palma
authors.affiliation: Department of Mechanical Engineering, Columbia University , New York, New York 10027, United States.
authors.forename: Daniel A
authors.initials: DA
authors.lastname: Chenet
authors.affiliation: National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States.
authors.forename: Geyou
authors.initials: G
authors.lastname: Ao
authors.affiliation: National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States.
authors.forename: Ming
authors.initials: M
authors.lastname: Zheng
authors.affiliation: Department of Mechanical Engineering, Columbia University , New York, New York 10027, United States.
authors.forename: James C
authors.initials: JC
authors.lastname: Hone
authors.affiliation: Department of Applied Physics and Applied Mathematics, Columbia University , New York, New York 10027, United States.
authors.forename: Shalom J
authors.initials: SJ
authors.lastname: Wind
keywords: DNA-wrapped SWCNT; carbon nanotube FETs; carbon nanotubes; directed assembly