title: Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors.
abstract: Multi-layer black phosphorus has emerged as a strong candidate owing to its high carrier mobility with most of the previous research work focused on its p-type properties. Very few studies have been performed on its n-type electronic characteristics which are important not only for the complementary operation for logic, but also crucial for understanding the carrier transport through the metal-black phosphorus junction. A thorough understanding and proper evaluation of the performance potential of both p- and n-types are highly desirable. In this paper, we investigate the temperature dependent ambipolar operation of both electron and hole transport from 300 K to 20 K. On-currents as high as 85 μA μm(-1) for a 0.2 μm channel length BP nFET at 300 K are observed. Moreover, we provide the first systematic study on the low frequency noise mechanisms for both n-channel and p-channel BP transistors. The dominated noise mechanisms of the multi-layer BP nFET and pFET are mobility fluctuation and carrier number fluctuations with correlated mobility fluctuations, respectively. We have also established a baseline of the low electrical noise of 8.1 × 10(-9)μm(2) Hz(-1) at 10 Hz at room temperature for BP pFETs, which is 3 times improvement over previous reports, and 7.0 × 10(-8)μm(2) Hz(-1) for BP nFETs for the first time.
authors.affiliation: Wuhan National High Magnetic Field Center and School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China. yqwu@mail.hust.edu.cn.
authors.forename: Xuefei
authors.initials: X
authors.lastname: Li
authors.forename: Yuchen
authors.initials: Y
authors.lastname: Du
authors.forename: Mengwei
authors.initials: M
authors.lastname: Si
authors.forename: Lingming
authors.initials: L
authors.lastname: Yang
authors.forename: Sichao
authors.initials: S
authors.lastname: Li
authors.forename: Tiaoyang
authors.initials: T
authors.lastname: Li
authors.forename: Xiong
authors.initials: X
authors.lastname: Xiong
authors.forename: Peide
authors.initials: P
authors.lastname: Ye
authors.forename: Yanqing
authors.initials: Y
authors.lastname: Wu