title: P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor.
abstract: A high-performance multilayer MoS2 p-type field-effect transistor is realized via controllable chemical doping, which shows an excellent on/off ratio of 10(9) and a maximum hole mobility of 132 cm(2) V(-1) s(-1) at 133 K. The developed technique will enable 2D materials to be used for future high-efficiency and low-power semiconductor device applications.
authors.affiliation: Samsung-SKKU Graphene/2D Center (SSGC), Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangangu, Suwon, Gyeonggi-do, 440-746, Korea.
authors.forename: Xiaochi
authors.initials: X
authors.lastname: Liu
authors.affiliation: Samsung-SKKU Graphene/2D Center (SSGC), Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangangu, Suwon, Gyeonggi-do, 440-746, Korea.
authors.forename: Deshun
authors.initials: D
authors.lastname: Qu
authors.affiliation: Samsung-SKKU Graphene/2D Center (SSGC), Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangangu, Suwon, Gyeonggi-do, 440-746, Korea.
authors.forename: Jungjin
authors.initials: J
authors.lastname: Ryu
authors.affiliation: Samsung-SKKU Graphene/2D Center (SSGC), Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangangu, Suwon, Gyeonggi-do, 440-746, Korea.
authors.forename: Faisal
authors.initials: F
authors.lastname: Ahmed
authors.affiliation: Samsung-SKKU Graphene/2D Center (SSGC), Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangangu, Suwon, Gyeonggi-do, 440-746, Korea.
authors.forename: Zheng
authors.initials: Z
authors.lastname: Yang
authors.affiliation: Samsung-SKKU Graphene/2D Center (SSGC), Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangangu, Suwon, Gyeonggi-do, 440-746, Korea.
authors.forename: Daeyeong
authors.initials: D
authors.lastname: Lee
authors.affiliation: Samsung-SKKU Graphene/2D Center (SSGC), Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangangu, Suwon, Gyeonggi-do, 440-746, Korea.
authors.forename: Won Jong
authors.initials: WJ
authors.lastname: Yoo
keywords: MoS2; chemical doping; contact resistance; p-type; transistors