title: Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2.
abstract: The controllability over strongly correlated electronic states promises unique electronic devices. A recent example is an optically induced ultrafast switching device based on the transition between the correlated Mott insulating state and a metallic state of a transition metal dichalcogenide 1T-TaS2. However, the electronic switching has been challenging and the nature of the transition has been veiled. Here we demonstrate the nanoscale electronic manipulation of the Mott state of 1T-TaS2. The voltage pulse from a scanning tunnelling microscope switches the insulating phase locally into a metallic phase with irregularly textured domain walls in the charge density wave order inherent to this Mott state. The metallic state is revealed as a correlated phase, which is induced by the moderate reduction of electron correlation due to the charge density wave decoherence.
authors.affiliation: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang 790-784, Korea.|Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.
authors.forename: Doohee
authors.initials: D
authors.lastname: Cho
authors.affiliation: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang 790-784, Korea.|Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.
authors.forename: Sangmo
authors.initials: S
authors.lastname: Cheon
authors.affiliation: Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.
authors.forename: Ki-Seok
authors.initials: KS
authors.lastname: Kim
authors.affiliation: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang 790-784, Korea.|Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.
authors.forename: Sung-Hoon
authors.identifier: http://orcid.org/0000-0002-8553-8007
authors.initials: SH
authors.lastname: Lee
authors.affiliation: Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.|Laboratory for Pohang Emergent Materials and Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang 790-784, Korea.
authors.forename: Yong-Heum
authors.initials: YH
authors.lastname: Cho
authors.affiliation: Laboratory for Pohang Emergent Materials and Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang 790-784, Korea.|Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA.
authors.forename: Sang-Wook
authors.initials: SW
authors.lastname: Cheong
authors.affiliation: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang 790-784, Korea.|Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.
authors.forename: Han Woong
authors.initials: HW
authors.lastname: Yeom