title: Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p-n vdW Heterostructure.
abstract: Heterostructure engineering of atomically thin two-dimensional materials offers an exciting opportunity to fabricate atomically sharp interfaces for highly tunable electronic and optoelectronic devices. Here, we demonstrate abrupt interface between two completely dissimilar material systems, i.e, GaTe-MoS2 p-n heterojunction transistors, where the resulting device possesses unique electronic properties and self-driven photoelectric characteristics. Fabricated heterostructure transistors exhibit forward biased rectifying behavior where the transport is ambipolar with both electron and hole carriers contributing to the overall transport. Under illumination, photoexcited electron-hole pairs are readily separated by large built-in potential formed at the GaTe-MoS2 interface efficiently generating self-driven photocurrent within <10 ms. Overall results suggest that abrupt interfaces between vastly different material systems with different crystal symmetries still allow efficient charge transfer mechanisms at the interface and are attractive for photoswitch, photodetector, and photovoltaic applications because of large built-in potential at the interface.
authors.affiliation: School of Materials Science and Engineering, Beihang University , Beijing 100191, P.R. China.
authors.forename: Shengxue
authors.initials: S
authors.lastname: Yang
authors.affiliation: The MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEAD Applied Physics Institute and School of Physics, Nankai University , Tianjin 300457, China.|National Center for Nanoscience and Technology , No. 11 Beiyitiao, Zhongguancun, Beijing 100190, China.
authors.forename: Cong
authors.initials: C
authors.lastname: Wang
authors.affiliation: Department of Materials Science and Engineering, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
authors.forename: Can
authors.initials: C
authors.lastname: Ataca
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Li
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Hui
authors.initials: H
authors.lastname: Chen
authors.affiliation: School for Engineering of Matter, Transport and Energy, Arizona State University , Tempe, Arizona 85287, United States.
authors.forename: Hui
authors.initials: H
authors.lastname: Cai
authors.affiliation: School for Engineering of Matter, Transport and Energy, Arizona State University , Tempe, Arizona 85287, United States.
authors.forename: Aslihan
authors.initials: A
authors.lastname: Suslu
authors.affiliation: Department of Materials Science and Engineering, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
authors.forename: Jeffrey C
authors.initials: JC
authors.lastname: Grossman
authors.affiliation: School of Materials Science and Engineering, Beihang University , Beijing 100191, P.R. China.
authors.forename: Chengbao
authors.initials: C
authors.lastname: Jiang
authors.affiliation: The MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEAD Applied Physics Institute and School of Physics, Nankai University , Tianjin 300457, China.|National Center for Nanoscience and Technology , No. 11 Beiyitiao, Zhongguancun, Beijing 100190, China.
authors.forename: Qian
authors.initials: Q
authors.lastname: Liu
authors.affiliation: School for Engineering of Matter, Transport and Energy, Arizona State University , Tempe, Arizona 85287, United States.
authors.forename: Sefaattin
authors.initials: S
authors.lastname: Tongay
keywords: ambipolar behavior; dissimilar material systems; p−n heterojunction; rectification; self-driven photocurrent