title: Oxide-based Synaptic Transistors Gated by Sol-Gel Silica Electrolytes.
abstract: Low-temperature sol-gel processed silica electrolyte films showed a high specific capacitance of 3.0 μF/cm(2) due to the electric-double-layer (EDL) effect. Oxide-based transistors gated by such silica electrolyte films show a high on/off ratio (>10(7)) and a very low operation voltage (<2.0 V). The proton-related dynamic modulation in these devices makes them ideal candidates for biological synapse emulation. Short-term synaptic plasticity, such as paired pulse facilitation, was successfully emulated. Most importantly, spiking and logic operation were also demonstrated when two lateral in-plane gates were used as the presynaptic inputs. Our oxide-based EDL transistors gated by sol-gel processed silica electrolyte films provide an interesting approach for synaptic behavior emulation, which is interesting for brain-inspired neuromorphic systems.
authors.affiliation: School of Electronic Science & Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
authors.forename: Feng
authors.initials: F
authors.lastname: Shao
authors.affiliation: School of Electronic Science & Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
authors.forename: Yi
authors.initials: Y
authors.lastname: Yang
authors.affiliation: School of Electronic Science & Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
authors.forename: Li Qiang
authors.initials: LQ
authors.lastname: Zhu
authors.affiliation: School of Electronic Science & Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
authors.forename: Ping
authors.initials: P
authors.lastname: Feng
authors.affiliation: School of Electronic Science & Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
authors.forename: Qing
authors.initials: Q
authors.lastname: Wan
keywords: artificial synapses; electric-double-layer; neuromorphic systems; oxide-based transistors; silica electrolyte films