title: Ion-Beam-Directed Self-Ordering of Ga Nanodroplets on GaAs Surfaces.
abstract: Ordered nanodroplet arrays and aligned nanodroplet chains are fabricated using ion-beam-directed self-organization. The morphological evolution of nanodroplets formed on GaAs (100) substrates under ion beam bombardment is characterized by scanning electron microscopy and atomic force microscopy. Ordered Ga nanodroplets are self-assembled under ion beam bombardment at off-normal incidence angles. The uniformity, size, and density of Ga nanodroplets can be tuned by the incident angles of ion beam. The ion beam current also plays a critical role in the self-ordering of Ga nanodroplets, and it is found that the droplets exhibit a similar droplet size but higher density and better uniformity with increasing the ion beam current. In addition, more complex arrangements of nanodroplets are achieved via in situ patterning and ion-beam-directed migration of Ga atoms. Particularly, compared to the destructive formation of nanodroplets through direct ion beam bombardment, the controllable assembly of nanodroplets on intact surfaces can be used as templates for fabrication of ordered semiconductor nanostructures by droplet epitaxy.
authors.affiliation: Institute of Fundamental and Frontier Science, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.|Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, 621999, People's Republic of China.|Research Center for Microsystems and Terahertz, China Academy of Engineering Physics, Mianyang, 621999, People's Republic of China.|Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, People's Republic of China.
authors.forename: Xingliang
authors.initials: X
authors.lastname: Xu
authors.affiliation: Institute of Fundamental and Frontier Science, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.|Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.
authors.forename: Jiang
authors.initials: J
authors.lastname: Wu
authors.affiliation: Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, People's Republic of China.
authors.forename: Xiaodong
authors.initials: X
authors.lastname: Wang
authors.affiliation: Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, People's Republic of China.
authors.forename: Mingliang
authors.initials: M
authors.lastname: Zhang
authors.affiliation: Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, 621999, People's Republic of China.|Research Center for Microsystems and Terahertz, China Academy of Engineering Physics, Mianyang, 621999, People's Republic of China.
authors.forename: Juntao
authors.initials: J
authors.lastname: Li
authors.affiliation: Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, 621999, People's Republic of China.|Research Center for Microsystems and Terahertz, China Academy of Engineering Physics, Mianyang, 621999, People's Republic of China.
authors.forename: Zhigui
authors.initials: Z
authors.lastname: Shi
authors.affiliation: Institute of Fundamental and Frontier Science, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
authors.forename: Handong
authors.initials: H
authors.lastname: Li
authors.affiliation: Institute of Fundamental and Frontier Science, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
authors.forename: Zhihua
authors.initials: Z
authors.lastname: Zhou
authors.affiliation: Institute of Fundamental and Frontier Science, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
authors.forename: Haining
authors.initials: H
authors.lastname: Ji
authors.affiliation: Institute of Fundamental and Frontier Science, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
authors.forename: Xiaobin
authors.initials: X
authors.lastname: Niu
authors.affiliation: Institute of Fundamental and Frontier Science, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China. zhmwang@uestc.edu.cn.|Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, People's Republic of China. zhmwang@uestc.edu.cn.
authors.forename: Zhiming M
authors.initials: ZM
authors.lastname: Wang
keywords: Droplet epitaxy; Focused ion beam; Nanofabrication; Self-assembly
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