title: Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures.
abstract: Defect-free mismatched heterostructures on Si substrates are produced by an innovative strategy. The strain relaxation is engineered to occur elastically rather than plastically by combining suitable substrate patterning and vertical crystal growth with compositional grading. Its validity is proven both experimentally and theoretically for the pivotal case of SiGe/Si(001).
authors.affiliation: Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, CH-, 8093, Zürich, Switzerland.
authors.forename: Fabio
authors.initials: F
authors.lastname: Isa
authors.affiliation: L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via Cozzi 55 I-, 20125, Milano, Italy.
authors.forename: Marco
authors.initials: M
authors.lastname: Salvalaglio
authors.affiliation: Electron Microscopy Center EMPA, Swiss Federal Laboratories for Materials, Science and Technology, Überlandstrasse 129, CH, -8600, Dübendorf, Switzerland.
authors.forename: Yadira Arroyo Rojas
authors.initials: YA
authors.lastname: Dasilva
authors.affiliation: Department of Condensed Matter Physics, Masaryk University, Kotlárˇská 2, 61137, Brno, Czech Republic.|CEITEC, Masaryk University, Kamenice 5, 60177, Brno, Czech Republic.
authors.forename: Mojmír
authors.initials: M
authors.lastname: Meduňa
authors.affiliation: L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via Cozzi 55 I-, 20125, Milano, Italy.
authors.forename: Michael
authors.initials: M
authors.lastname: Barget
authors.affiliation: Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, CH-, 8093, Zürich, Switzerland.
authors.forename: Arik
authors.initials: A
authors.lastname: Jung
authors.affiliation: Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, CH-, 8093, Zürich, Switzerland.
authors.forename: Thomas
authors.initials: T
authors.lastname: Kreiliger
authors.affiliation: L-NESS and Department of Physics, Politecnico di Milano, Via Anzani 42, I-22100, Como, Italy.
authors.forename: Giovanni
authors.initials: G
authors.lastname: Isella
authors.affiliation: Electron Microscopy Center EMPA, Swiss Federal Laboratories for Materials, Science and Technology, Überlandstrasse 129, CH, -8600, Dübendorf, Switzerland.
authors.forename: Rolf
authors.initials: R
authors.lastname: Erni
authors.affiliation: L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via Cozzi 55 I-, 20125, Milano, Italy.
authors.forename: Fabio
authors.initials: F
authors.lastname: Pezzoli
authors.affiliation: L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via Cozzi 55 I-, 20125, Milano, Italy.
authors.forename: Emiliano
authors.initials: E
authors.lastname: Bonera
authors.affiliation: CSEM, Rue Jaquet-Droz 1, CH, -2002, Neuchâtel, Switzerland.
authors.forename: Philippe
authors.initials: P
authors.lastname: Niedermann
authors.affiliation: Electron Microscopy Center EMPA, Swiss Federal Laboratories for Materials, Science and Technology, Überlandstrasse 129, CH, -8600, Dübendorf, Switzerland.
authors.forename: Pierangelo
authors.initials: P
authors.lastname: Gröning
authors.affiliation: L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via Cozzi 55 I-, 20125, Milano, Italy.
authors.forename: Francesco
authors.initials: F
authors.lastname: Montalenti
authors.affiliation: Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, CH-, 8093, Zürich, Switzerland.
authors.forename: Hans
authors.initials: H
authors.lastname: von Känel
keywords: SiGe; heteroepitaxy; heterostructures; strain relaxation; substrate patterning