title: Wavelength-tunable entangled photons from silicon-integrated III-V quantum dots.
abstract: Many of the quantum information applications rely on indistinguishable sources of polarization-entangled photons. Semiconductor quantum dots are among the leading candidates for a deterministic entangled photon source; however, due to their random growth nature, it is impossible to find different quantum dots emitting entangled photons with identical wavelengths. The wavelength tunability has therefore become a fundamental requirement for a number of envisioned applications, for example, nesting different dots via the entanglement swapping and interfacing dots with cavities/atoms. Here we report the generation of wavelength-tunable entangled photons from on-chip integrated InAs/GaAs quantum dots. With a novel anisotropic strain engineering technique based on PMN-PT/silicon micro-electromechanical system, we can recover the quantum dot electronic symmetry at different exciton emission wavelengths. Together with a footprint of several hundred microns, our device facilitates the scalable integration of indistinguishable entangled photon sources on-chip, and therefore removes a major stumbling block to the quantum-dot-based solid-state quantum information platforms.
authors.affiliation: Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany.
authors.forename: Yan
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany.
authors.forename: Jiaxiang
authors.initials: J
authors.lastname: Zhang
authors.affiliation: Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany.
authors.forename: Michael
authors.initials: M
authors.lastname: Zopf
authors.affiliation: Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany.
authors.forename: Kyubong
authors.initials: K
authors.lastname: Jung
authors.affiliation: Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany.
authors.forename: Yang
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany.
authors.forename: Robert
authors.initials: R
authors.lastname: Keil
authors.affiliation: Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany.
authors.forename: Fei
authors.initials: F
authors.lastname: Ding
authors.affiliation: Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany.|Material Systems for Nanoelectronics, Chemnitz University of Technology, Reichenhainer strasse 70, 09107 Chemnitz, Germany.
authors.forename: Oliver G
authors.initials: OG
authors.lastname: Schmidt
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