title: Sub-terahertz microsecond optically controlled switch with GaAs active element beyond the photoelectric threshold.
abstract: We study an unusual working regime of a recently developed sub-terahertz microwave cavity-based switch. The resonator cavity includes a semiconductor plate which is illuminated by laser emission beyond the photoelectric threshold. Despite a significant change to the conventional process of photoelectric effect we have found that the switch works. Typical switching performance rate is about 1 μs for the regime. A process of carrier density relaxation beyond the photoelectric threshold is discussed. An idea of diagnostic method for the semiconductor's quality is proposed.
authors.affiliation: Institute of Applied Physics Russian Academy of Sciences, 46 Ulyanova Street, Nizhny Novgorod 603950, Russia.
authors.forename: M
authors.initials: M
authors.lastname: Kulygin
authors.affiliation: Institute of Applied Physics Russian Academy of Sciences, 46 Ulyanova Street, Nizhny Novgorod 603950, Russia.
authors.forename: G
authors.initials: G
authors.lastname: Denisov
authors.affiliation: Institute of Applied Physics Russian Academy of Sciences, 46 Ulyanova Street, Nizhny Novgorod 603950, Russia.
authors.forename: K
authors.initials: K
authors.lastname: Vlasova
authors.affiliation: Institute of Applied Physics Russian Academy of Sciences, 46 Ulyanova Street, Nizhny Novgorod 603950, Russia.
authors.forename: N
authors.initials: N
authors.lastname: Andreev
authors.affiliation: Institute of Applied Physics Russian Academy of Sciences, 46 Ulyanova Street, Nizhny Novgorod 603950, Russia.
authors.forename: S
authors.initials: S
authors.lastname: Shubin
authors.affiliation: Institute of Applied Physics Russian Academy of Sciences, 46 Ulyanova Street, Nizhny Novgorod 603950, Russia.
authors.forename: S
authors.initials: S
authors.lastname: Salahetdinov