title: Dual-Mode Luminescence Modulation upon Visible-Light-Driven Photochromism with High Contrast for Inorganic Luminescence Ferroelectrics.
abstract: A luminescence ferroelectric oxide, Na(0.5)Bi(2.5)Nb2O9 (NBN), system with bismuth layer structure introduced by lanthanide ion (Er(3+)) has been demonstrated to exhibit reversible, high-contrast luminescence modulation (95%) and excellent fatigue resistance based on visible-light-driven photochromism (407 nm or sunlight). The coloration and decoloration process can be effectively read out by dual modes, upconversion and downshifting, and reversibly converted between green and dark gray by alternating visible light or sunlight irradiation and thermal stimulus. The luminescence modulation degree upon photochromic reactions is strongly dependent upon irradiation light wavelength and irradiation time. After undergoing several cycles, there are no significant degradations, showing high reversibility. Considering its high-contrast photoswitchable luminescence feature and intrinsic ferroelectricity of NBN host, NBN-based multifunctional materials can be suggested as a promising candidate for new potentials in photonic storage and optoelectronic multifunctional devices.
authors.affiliation: School of Materials and Metallurgy, Inner Mongolia University of Science and Technology , 7 Arerding Street, Kun District, Baotou 014010, People's Republic of China.
authors.forename: Qiwei
authors.initials: Q
authors.lastname: Zhang
authors.affiliation: School of Materials and Metallurgy, Inner Mongolia University of Science and Technology , 7 Arerding Street, Kun District, Baotou 014010, People's Republic of China.
authors.forename: Xuewen
authors.initials: X
authors.lastname: Zheng
authors.affiliation: School of Materials and Metallurgy, Inner Mongolia University of Science and Technology , 7 Arerding Street, Kun District, Baotou 014010, People's Republic of China.
authors.forename: Haiqin
authors.initials: H
authors.lastname: Sun
authors.affiliation: School of Materials and Metallurgy, Inner Mongolia University of Science and Technology , 7 Arerding Street, Kun District, Baotou 014010, People's Republic of China.
authors.forename: Wenqing
authors.initials: W
authors.lastname: Li
authors.affiliation: Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University , 4800 Caoyang Road, Shanghai 201804, People's Republic of China.
authors.forename: Xusheng
authors.initials: X
authors.lastname: Wang
authors.affiliation: School of Materials and Metallurgy, Inner Mongolia University of Science and Technology , 7 Arerding Street, Kun District, Baotou 014010, People's Republic of China.
authors.forename: Xihong
authors.initials: X
authors.lastname: Hao
authors.affiliation: School of Materials and Metallurgy, Inner Mongolia University of Science and Technology , 7 Arerding Street, Kun District, Baotou 014010, People's Republic of China.
authors.forename: Shengli
authors.initials: S
authors.lastname: An
keywords: fatigue resistance; ferroelectric oxide; luminescence modulation; photochromism; photonic storage; reversibility