title: Reaction ion etching process for improving laser damage resistance of fused silica optical surface.
abstract: Laser induced damage of fused silica optics occurs primarily on optical surface or subsurface resulting from various defects produced during polishing/grinding process. Many new kinds of surface treatment processes are explored to remove or control the defects on fused silica surface. In this study, we report a new application of reaction ion etching (RIE)-based surface treatment process for manufacture of high quality fused silica optics. The influence of RIE processes on laser damage resistance as a function of etching depth and the evolution of typical defects which are associated with laser damage performance were investigated. The results show that the impurity element defects and subsurface damage on the samples surface were efficiently removed and prevented. Pure silica surface with relatively single-stable stoichiometry and low carbon atomic concentration was created during the etching. The laser damage resistance of the etched samples increased dramatically. The increase of roughness and ODC point defect with deeper etching are believed to be the main factors to limit further increase of the damage resistance of fused silica. The study is expected to contribute to the development of fused silica optics with high resistance to laser induced degradation in the future.
authors.forename: Laixi
authors.initials: L
authors.lastname: Sun
authors.forename: Hongjie
authors.initials: H
authors.lastname: Liu
authors.forename: Jin
authors.initials: J
authors.lastname: Huang
authors.forename: Xin
authors.initials: X
authors.lastname: Ye
authors.forename: Handing
authors.initials: H
authors.lastname: Xia
authors.forename: Qingzhi
authors.initials: Q
authors.lastname: Li
authors.forename: Xiaodong
authors.initials: X
authors.lastname: Jiang
authors.forename: Weidong
authors.initials: W
authors.lastname: Wu
authors.forename: Liming
authors.initials: L
authors.lastname: Yang
authors.forename: Wanguo
authors.initials: W
authors.lastname: Zheng