title: Orientation Dependence of Electromechanical Characteristics of Defect-free InAs Nanowires.
abstract: Understanding the electrical properties of defect-free nanowires with different structures and their responses under deformation are essential for design and applications of nanodevices and strain engineering. In this study, defect-free zinc-blende- and wurtzite-structured InAs nanowires were grown using molecular beam epitaxy, and individual nanowires with different structures and orientations were carefully selected and their electrical properties and electromechanical responses were investigated using an electrical probing system inside a transmission electron microscope. Through our careful experimental design and detailed analyses, we uncovered several extraordinary physical phenomena, such as the electromechanical characteristics are dominated by the nanowire orientation, rather than its crystal structure. Our results provide critical insights into different responses induced by deformation of InAs with different structures, which is important for nanowire-based devices.
authors.affiliation: Beijing Key Lab of Microstructure and Property of Advanced Material, Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology , Beijing 100124, China.
authors.forename: Kun
authors.initials: K
authors.lastname: Zheng
authors.forename: Zhi
authors.initials: Z
authors.lastname: Zhang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu-Tian Road, Shanghai 200083, China.
authors.forename: Yibin
authors.initials: Y
authors.lastname: Hu
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu-Tian Road, Shanghai 200083, China.
authors.forename: Pingping
authors.initials: P
authors.lastname: Chen
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu-Tian Road, Shanghai 200083, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Lu
authors.forename: John
authors.initials: J
authors.lastname: Drennan
authors.affiliation: Beijing Key Lab of Microstructure and Property of Advanced Material, Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology , Beijing 100124, China.
authors.forename: Xiaodong
authors.initials: X
authors.lastname: Han
authors.forename: Jin
authors.initials: J
authors.lastname: Zou
keywords: InAs nanowires; deformation; electrical properties; electron transmission microscope