title: Monolithic 3D CMOS Using Layered Semiconductors.
abstract: Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications.
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.|Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Angada B
authors.initials: AB
authors.lastname: Sachid
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.|Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.|Berkeley Sensor and Actuator Center, University of California, Berkeley, CA, 94720, USA.
authors.forename: Mahmut
authors.initials: M
authors.lastname: Tosun
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.|Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.|Berkeley Sensor and Actuator Center, University of California, Berkeley, CA, 94720, USA.
authors.forename: Sujay B
authors.initials: SB
authors.lastname: Desai
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.|Department of Material Sciences and Engineering, National Chao-Tung University, Hsinchu, 300, Taiwan.
authors.forename: Ching-Yi
authors.initials: CY
authors.lastname: Hsu
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.|Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.|Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.
authors.forename: Der-Hsien
authors.initials: DH
authors.lastname: Lien
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.|Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Surabhi R
authors.initials: SR
authors.lastname: Madhvapathy
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan.
authors.forename: Yu-Ze
authors.initials: YZ
authors.lastname: Chen
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.|Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.|Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Mark
authors.initials: M
authors.lastname: Hettick
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.|Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Jeong Seuk
authors.initials: JS
authors.lastname: Kang
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
authors.forename: Yuping
authors.initials: Y
authors.lastname: Zeng
authors.affiliation: Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.
authors.forename: Jr-Hau
authors.initials: JH
authors.lastname: He
authors.affiliation: Department of Material Sciences and Engineering, National Chao-Tung University, Hsinchu, 300, Taiwan.
authors.forename: Edward Yi
authors.initials: EY
authors.lastname: Chang
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan.
authors.forename: Yu-Lun
authors.initials: YL
authors.lastname: Chueh
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.|Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.|Berkeley Sensor and Actuator Center, University of California, Berkeley, CA, 94720, USA.|Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Ali
authors.initials: A
authors.lastname: Javey
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
authors.forename: Chenming
authors.initials: C
authors.lastname: Hu
keywords: metal oxide semiconductors; monolithic 3D integration; transition metal dichalcogenides; ultra-low voltage operation