title: Magnetization and Resistance Switchings Induced by Electric Field in Epitaxial Mn:ZnO/BiFeO3 Multiferroic Heterostructures at Room Temperature.
abstract: Electric field induced reversible switchings of the magnetization and resistance were achieved at room temperature in epitaxial Mn:ZnO(110)/BiFeO3(001) heterostructures. The observed modulation of magnetic moment is ∼500% accompanying with a coercive field varying from 43 to 300 Oe and a resistive switching ratio up to ∼10(4)% with the applied voltages of ±4 V. The switching mechanisms in magnetization and resistance are attributed to the ferroelectric polarization reversal of the BiFeO3 layer under applied electric fields, combined with the reversible change of oxygen vacancy concentration at the Mn:ZnO/BiFeO3 interface.
authors.affiliation: Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University , Tianjin 300072, People's Republic of China.
authors.forename: Dong
authors.initials: D
authors.lastname: Li
authors.affiliation: Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University , Tianjin 300072, People's Republic of China.
authors.forename: Wanchao
authors.initials: W
authors.lastname: Zheng
authors.affiliation: Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University , Tianjin 300072, People's Republic of China.
authors.forename: Dongxing
authors.initials: D
authors.lastname: Zheng
authors.affiliation: Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University , Tianjin 300072, People's Republic of China.
authors.forename: Junlu
authors.initials: J
authors.lastname: Gong
authors.affiliation: Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University , Tianjin 300072, People's Republic of China.
authors.forename: Liyan
authors.initials: L
authors.lastname: Wang
authors.affiliation: Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University , Tianjin 300072, People's Republic of China.
authors.forename: Chao
authors.initials: C
authors.lastname: Jin
authors.affiliation: Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University , Tianjin 300072, People's Republic of China.
authors.forename: Peng
authors.initials: P
authors.lastname: Li
authors.affiliation: Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University , Tianjin 300072, People's Republic of China.
authors.forename: Haili
authors.initials: H
authors.lastname: Bai
keywords: bismuth ferrite; magnetization reversal; magnetoelectric coupling effect; multiferroic heterosutructures; zinc oxide films