title: Alloyed 2D Metal-Semiconductor Atomic Layer Junctions.
abstract: Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers can be engineered through interfacial doping with Nb atoms. WxNb1-xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices. The creation of such alloyed 2D junctions between dissimilar atomic layer domains could be the most important factor in controlling the electronic properties of 2D junctions and the design and fabrication of 2D atomic layer devices.
authors.affiliation: Department of Advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science , 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 51508, Republic of Korea.
authors.forename: Ah Ra
authors.initials: AR
authors.lastname: Kim
authors.affiliation: Department of Advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science , 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 51508, Republic of Korea.|School of Materials Science and Engineering, Gwanju Institute of Science and Technology (GIST) , 261 Cheomdan-gwangiro, Buk-Gu, Gwangju 61005, Republic of Korea.
authors.forename: Yonghun
authors.initials: Y
authors.lastname: Kim
authors.affiliation: School of Chemical Engineering, Sungkyunkwan University , 300 Cheongcheon-dong, Suwon, Gyeonggi-do 16419, Republic of Korea.
authors.forename: Jaewook
authors.initials: J
authors.lastname: Nam
authors.affiliation: Jeonju Center, Korea Basic Science Institute , Jeonju, Jeollabuk-do 54907, Republic of Korea.
authors.forename: Hee-Suk
authors.initials: HS
authors.lastname: Chung
authors.affiliation: School of Chemical Engineering, Sungkyunkwan University , 300 Cheongcheon-dong, Suwon, Gyeonggi-do 16419, Republic of Korea.
authors.forename: Dong Jae
authors.initials: DJ
authors.lastname: Kim
authors.affiliation: Department of Advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science , 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 51508, Republic of Korea.
authors.forename: Jung-Dae
authors.initials: JD
authors.lastname: Kwon
authors.affiliation: Department of Advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science , 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 51508, Republic of Korea.
authors.forename: Sang Won
authors.initials: SW
authors.lastname: Park
authors.affiliation: Structure Analysis Group, Gyeongbuk Science & Technology Promotion Center, Future Strategy Research Institute , 17 Cheomdangieop 1-ro, Sangdong-myeon, Gumi, Gyeongbuk 39171, Republic of Korea.
authors.forename: Jucheol
authors.initials: J
authors.lastname: Park
authors.affiliation: Department of Advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science , 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 51508, Republic of Korea.
authors.forename: Sun Young
authors.initials: SY
authors.lastname: Choi
authors.affiliation: School of Materials Science and Engineering, Gwanju Institute of Science and Technology (GIST) , 261 Cheomdan-gwangiro, Buk-Gu, Gwangju 61005, Republic of Korea.
authors.forename: Byoung Hun
authors.initials: BH
authors.lastname: Lee
authors.affiliation: Department of Electricity and Electronic Engineering, University of Ulsan , 93 Daehak-ro, Nam-gu, Ulsan 44610, Republic of Korea.
authors.forename: Ji Hyeon
authors.initials: JH
authors.lastname: Park
authors.affiliation: Electrochemistry Department, Surface Technology Division, Korea Institute of Materials Science (KIMS) , 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Republic of Korea.
authors.forename: Kyu Hwan
authors.initials: KH
authors.lastname: Lee
authors.affiliation: Department of Advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science , 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 51508, Republic of Korea.
authors.forename: Dong-Ho
authors.initials: DH
authors.lastname: Kim
authors.affiliation: Electrochemistry Department, Surface Technology Division, Korea Institute of Materials Science (KIMS) , 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Republic of Korea.
authors.forename: Sung Mook
authors.initials: SM
authors.lastname: Choi
authors.affiliation: Department of Materials Science and NanoEngineering, Rice University , 6100 Main Street, Houston, Texas 77005, United States .
authors.forename: Pulickel M
authors.initials: PM
authors.lastname: Ajayan
authors.affiliation: School of Materials Science and Engineering, Inha University , 100 Inharo, Nam-Gu, Incheon 22212, Republic of Korea.
authors.forename: Myung Gwan
authors.initials: MG
authors.lastname: Hahm
authors.affiliation: Department of Advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science , 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 51508, Republic of Korea.
authors.forename: Byungjin
authors.initials: B
authors.lastname: Cho
keywords: NbSe2; Transition metal dichalcogenide; WSe2; atomic-layered FET; heterostructure