title: Silicon-integrated short-wavelength hybrid-cavity VCSEL.
abstract: We demonstrate a short-wavelength hybrid-cavity vertical-cavity surface-emitting laser (VCSEL) heterogeneously integrated on silicon. A GaAs-based "half-VCSEL" has been attached to a dielectric distributed Bragg reflector (DBR) on a silicon wafer using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, thereby creating a cavity with the standing-wave optical field extending over the silicon- and GaAs-based parts of the cavity. A 9 µm oxide aperture diameter VCSEL with a threshold current of 1.2 mA produces 1.6 mW optical output power at 6.0 mA bias current with a wavelength of ~845 nm.
authors.forename: Emanuel P
authors.initials: EP
authors.lastname: Haglund
authors.forename: Sulakshna
authors.initials: S
authors.lastname: Kumari
authors.forename: Petter
authors.initials: P
authors.lastname: Westbergh
authors.forename: Johan S
authors.initials: JS
authors.lastname: Gustavsson
authors.forename: Gunther
authors.initials: G
authors.lastname: Roelkens
authors.forename: Roel
authors.initials: R
authors.lastname: Baets
authors.forename: Anders
authors.initials: A
authors.lastname: Larsson