title: Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells.
abstract: This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 - x Cd x Te grown by molecular beam epitaxy. The structure contains a single quantum well Hg0.35Cd0.65Te/HgTe/Hg0.35Cd0.65Te with thickness of 5.6 nm in the sub-surface layer of the semiconductor. Both the conductance-voltage and capacitance-voltage characteristics show strong oscillations when the metal-insulator-semiconductor (MIS) structure with a single quantum well based on HgTe is biased into the strong inversion mode. Also, oscillations on the voltage dependencies of differential resistance of the space charge region were observed. These oscillations were related to the recharging of quantum levels in HgTe.
authors.affiliation: Scientific Research Company "Caratt", Striskaya St. 202, Lviv, 79031, Ukraine. i.izhnin@carat.electron.ua.
authors.forename: Ihor I
authors.initials: II
authors.lastname: Izhnin
authors.affiliation: National Research Tomsk State University, Lenina Av. 36, 634050, Tomsk, Russia. nesm69@mail.ru.
authors.forename: Sergey N
authors.initials: SN
authors.lastname: Nesmelov
authors.affiliation: National Research Tomsk State University, Lenina Av. 36, 634050, Tomsk, Russia. bonespirit@sibmail.com.
authors.forename: Stanislav M
authors.initials: SM
authors.lastname: Dzyadukh
authors.affiliation: National Research Tomsk State University, Lenina Av. 36, 634050, Tomsk, Russia. vav43@mail.tsu.ru.
authors.forename: Alexander V
authors.initials: AV
authors.lastname: Voitsekhovskii
authors.affiliation: National Research Tomsk State University, Lenina Av. 36, 634050, Tomsk, Russia. gorn_dim@sibmail.com.
authors.forename: Dmitry I
authors.initials: DI
authors.lastname: Gorn
authors.affiliation: A.V. Rzhanov Institute of Semiconductor Physics SB RAS, akademika Lavrent`eva Av. 13, 630090, Novosibirsk, Russia. dvor@isp.nsc.ru.
authors.forename: Sergey A
authors.initials: SA
authors.lastname: Dvoretsky
authors.affiliation: A.V. Rzhanov Institute of Semiconductor Physics SB RAS, akademika Lavrent`eva Av. 13, 630090, Novosibirsk, Russia. mikhailov@isp.nsc.ru.
authors.forename: Nikolaj N
authors.initials: NN
authors.lastname: Mikhailov
keywords: Admittance; HgCdTe; Molecular beam epitaxy; Single quantum well