title: Photothermoelectric Effects in Nanoporous Silicon.
abstract: The first observation of the photothermoelectric effect in a nanoporous silicon (NPSi) device indicates that the photocurrent is dependent on the position of light-induced local heating from illumination at the Au-electrode/NPSi interface.
authors.affiliation: National Nano Device Laboratories, National Applied Research Laboratories, 26, Prosperity Road I, Hsinchu, 30078, Taiwan.
authors.forename: Yu-Sheng
authors.initials: YS
authors.lastname: Lai
authors.affiliation: Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli, NanTou, 54561, Taiwan.
authors.forename: Chao-Yang
authors.initials: CY
authors.lastname: Tsai
authors.affiliation: Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli, NanTou, 54561, Taiwan.
authors.forename: Chin-Kai
authors.initials: CK
authors.lastname: Chang
authors.affiliation: Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli, NanTou, 54561, Taiwan.
authors.forename: Cheng-Yin
authors.initials: CY
authors.lastname: Huang
authors.affiliation: Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli, NanTou, 54561, Taiwan.
authors.forename: Vincent K S
authors.initials: VK
authors.lastname: Hsiao
authors.affiliation: Department of Applied Chemistry, National Chi Nan University, No. 1, University Road, Puli, NanTou, 54561, Taiwan.
authors.forename: Yuhlong Oliver
authors.initials: YO
authors.lastname: Su
keywords: nanoporous silicon; photothermoelectric effects; thermoelectric effects