title: Synthesis and characterization of large-area and continuous MoS2 atomic layers by RF magnetron sputtering.
abstract: In this article, we report layer-controlled, continuous and large-area molydenum sulfide (MoS2) growth onto a SiO2/Si substrate by RF sputtering combined with sulfurization. A two-step process was employed to synthesize MoS2 films. In the first step, an atomically thin MoO3 film was deposited by RF magnetron sputtering at 300 °C. Subsequently, the as-sputtered MoO3 film was further subjected to post-annealing and sulfurization processes at 650 °C for 1 hour. It was observed that the number of layers of MoS2 can be controlled by adjusting the sputtering time. The fabricated MoS2 transistors exhibited high mobility values of ∼21 cm(2) V(-1) s(-1) (bilayer) and ∼25 cm(2) V(-1) s(-1) (trilayer), on/off ratios in the range of ∼10(7) (bilayer) and 10(4)-10(5) (trilayer), respectively. We believe that our proposed paradigm can start a new method for the growth of MoS2 in future electronics and optoelectronics applications.
authors.affiliation: Graphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea. jwjung@sejong.ac.kr and Institute of Nano and Advanced Materials Engineering, Sejong University, Seoul 143-747, Republic of Korea.
authors.forename: Sajjad
authors.initials: S
authors.lastname: Hussain
authors.affiliation: Graphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea. jwjung@sejong.ac.kr and Institute of Nano and Advanced Materials Engineering, Sejong University, Seoul 143-747, Republic of Korea.
authors.forename: Muhammad Arslan
authors.initials: MA
authors.lastname: Shehzad
authors.affiliation: Graphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea. jwjung@sejong.ac.kr and Institute of Nano and Advanced Materials Engineering, Sejong University, Seoul 143-747, Republic of Korea.
authors.forename: Dhanasekaran
authors.initials: D
authors.lastname: Vikraman
authors.affiliation: Department of physics and Graphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea.
authors.forename: Muhammad Farooq
authors.initials: MF
authors.lastname: Khan
authors.affiliation: Dr. H. S. Gour Central University, Sagar, M.P.-470003, India.
authors.forename: Jai
authors.initials: J
authors.lastname: Singh
authors.affiliation: Graphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea. jwjung@sejong.ac.kr and Institute of Nano and Advanced Materials Engineering, Sejong University, Seoul 143-747, Republic of Korea.
authors.forename: Dong-Chul
authors.initials: DC
authors.lastname: Choi
authors.affiliation: Graphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea. jwjung@sejong.ac.kr and Institute of Nano and Advanced Materials Engineering, Sejong University, Seoul 143-747, Republic of Korea.
authors.forename: Yongho
authors.initials: Y
authors.lastname: Seo
authors.affiliation: Department of physics and Graphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea.
authors.forename: Jonghwa
authors.initials: J
authors.lastname: Eom
authors.affiliation: National Nano Fab Center, Daejeon, Republic of Korea. wangyulee@nnfc.re.kr.
authors.forename: Wan-Gyu
authors.initials: WG
authors.lastname: Lee
authors.affiliation: Graphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea. jwjung@sejong.ac.kr and Institute of Nano and Advanced Materials Engineering, Sejong University, Seoul 143-747, Republic of Korea.
authors.forename: Jongwan
authors.initials: J
authors.lastname: Jung