title: Graphene/h-BN/GaAs sandwich diode as solar cell and photodetector.
abstract: In graphene/semiconductor heterojunction, the statistic charge transfer between graphene and semiconductor leads to decreased junction barrier height and limits the Fermi level tuning effect in graphene, which greatly affects the final performance of the device. In this work, we have designed a sandwich diode for solar cells and photodetectors through inserting 2D hexagonal boron nitride (h-BN) into graphene/GaAs heterostructure to suppress the static charge transfer. The barrier height of graphene/GaAs heterojunction can be increased from 0.88 eV to 1.02 eV by inserting h-BN. Based on the enhanced Fermi level tuning effect with interface h-BN, through adopting photo-induced doping into the device, power conversion efficiency (PCE) of 10.18% has been achieved for graphene/h-BN/GaAs compared with 8.63% of graphene/GaAs structure. The performance of graphene/h-BN/GaAs based photodetector is also improved with on/off ratio increased by one magnitude compared with graphene/GaAs structure.
authors.forename: Xiaoqiang
authors.initials: X
authors.lastname: Li
authors.forename: Shisheng
authors.initials: S
authors.lastname: Lin
authors.forename: Xing
authors.initials: X
authors.lastname: Lin
authors.forename: Zhijuan
authors.initials: Z
authors.lastname: Xu
authors.forename: Peng
authors.initials: P
authors.lastname: Wang
authors.forename: Shengjiao
authors.initials: S
authors.lastname: Zhang
authors.forename: Huikai
authors.initials: H
authors.lastname: Zhong
authors.forename: Wenli
authors.initials: W
authors.lastname: Xu
authors.forename: Zhiqian
authors.initials: Z
authors.lastname: Wu
authors.forename: Wei
authors.initials: W
authors.lastname: Fang