title: Transient gain analysis of gain-switched semiconductor lasers during pulse lasing.
abstract: We analyzed the transient gain properties of three gain-switched semiconductor lasers with different materials and cavity structures during pulse lasing. All the semiconductor lasers were pumped with impulse optical pumping, and all the generated gain-switched output pulses were well described by exponential functions in their rise parts, wherein the transient gains were derived according to the rate-equation theoretical model. In spite of the different laser structures and materials, the results consistently demonstrated that a higher transient gain produces shorter output pulses, indicating the dominant role of higher transient gain in the generation of even shorter gain-switched pulses with semiconductor lasers.
authors.forename: Shaoqiang
authors.initials: S
authors.lastname: Chen
authors.forename: Takashi
authors.initials: T
authors.lastname: Ito
authors.forename: Akifumi
authors.initials: A
authors.lastname: Asahara
authors.forename: Hidekazu
authors.initials: H
authors.lastname: Nakamae
authors.forename: Takahiro
authors.initials: T
authors.lastname: Nakamura
authors.forename: Masahiro
authors.initials: M
authors.lastname: Yoshita
authors.forename: Changsu
authors.initials: C
authors.lastname: Kim
authors.forename: Baoping
authors.initials: B
authors.lastname: Zhang
authors.forename: Hiroyuki
authors.initials: H
authors.lastname: Yokoyama
authors.forename: Tohru
authors.initials: T
authors.lastname: Suemoto
authors.forename: Hidefumi
authors.initials: H
authors.lastname: Akiyama
mesh_terms: D004867:Equipment Design; D054023:Lasers, Semiconductor; D008962:Models, Theoretical; D055620:Optical Phenomena; D013997:Time Factors