title: Ferroelastic switching in a layered-perovskite thin film.
abstract: A controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.
authors.affiliation: Department of Physics, Beijing Normal University, 100875 Beijing, China.
authors.forename: Chuanshou
authors.initials: C
authors.lastname: Wang
authors.affiliation: EMAT (Electron Microscopy for Materials Science), University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium.|Institute of Microstructures and Properties of Advanced Materials, Beijing University of Technology, 100124 Beijing, China.
authors.forename: Xiaoxing
authors.initials: X
authors.lastname: Ke
authors.affiliation: State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084 Beijing, China.
authors.forename: Jianjun
authors.initials: J
authors.lastname: Wang
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, 100084 Beijing, China.
authors.forename: Renrong
authors.initials: R
authors.lastname: Liang
authors.affiliation: National Synchrotron Radiation Laboratory and CAS Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, 230026 Hefei, China.
authors.forename: Zhenlin
authors.initials: Z
authors.lastname: Luo
authors.affiliation: Department of Physics, Beijing Normal University, 100875 Beijing, China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Tian
authors.affiliation: Department of Materials Science and Engineering, University of California, 94720 Berkeley, California, USA.
authors.forename: Di
authors.initials: D
authors.lastname: Yi
authors.affiliation: Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, 100190 Beijing, China.
authors.forename: Qintong
authors.initials: Q
authors.lastname: Zhang
authors.affiliation: Department of Physics, Beijing Normal University, 100875 Beijing, China.
authors.forename: Jing
authors.initials: J
authors.lastname: Wang
authors.affiliation: Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, 100190 Beijing, China.
authors.forename: Xiu-Feng
authors.initials: XF
authors.lastname: Han
authors.affiliation: EMAT (Electron Microscopy for Materials Science), University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium.
authors.forename: Gustaaf
authors.initials: G
authors.lastname: Van Tendeloo
authors.affiliation: State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084 Beijing, China.|Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania, 16802 Pennsylvania, USA.
authors.forename: Long-Qing
authors.initials: LQ
authors.lastname: Chen
authors.affiliation: State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084 Beijing, China.
authors.forename: Ce-Wen
authors.initials: CW
authors.lastname: Nan
authors.affiliation: Department of Materials Science and Engineering, University of California, 94720 Berkeley, California, USA.
authors.forename: Ramamoorthy
authors.initials: R
authors.lastname: Ramesh
authors.affiliation: Department of Physics, Beijing Normal University, 100875 Beijing, China.
authors.forename: Jinxing
authors.initials: J
authors.lastname: Zhang
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