title: Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.
abstract: Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.
authors.affiliation: Department of Electrical Engineering and Computer Science, Tung Fang Design Institute, Kaohsiung, Taiwan, Republic of China. d9131802@gmail.com.
authors.forename: Kai-Huang
authors.initials: KH
authors.lastname: Chen
authors.affiliation: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China.
authors.forename: Kuan-Chang
authors.initials: KC
authors.lastname: Chang
authors.affiliation: Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China. tcchang@mail.phys.nsysu.eud.tw.|Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan, Republic of China. tcchang@mail.phys.nsysu.eud.tw.
authors.forename: Ting-Chang
authors.initials: TC
authors.lastname: Chang
authors.affiliation: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China.
authors.forename: Tsung-Ming
authors.initials: TM
authors.lastname: Tsai
authors.affiliation: Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China.
authors.forename: Shu-Ping
authors.initials: SP
authors.lastname: Liang
authors.affiliation: Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China.
authors.forename: Tai-Fa
authors.initials: TF
authors.lastname: Young
authors.affiliation: Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China.
authors.forename: Yong-En
authors.initials: YE
authors.lastname: Syu
authors.affiliation: Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan, Republic of China.|Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, Republic of China.
authors.forename: Simon M
authors.initials: SM
authors.lastname: Sze
keywords: Gadolinium; Nonvolatile memory; Resistive switching; Silicon oxide; Supercritical CO2
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