title: Electrical Properties of Synthesized Large-Area MoS₂ Field-Effect Transistors Fabricated with Inkjet-Printed Contacts.
abstract: We report the electrical properties of synthesized large-area monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) with low-cost inkjet-printed Ag electrodes. The monolayer MoS2 film was grown by a chemical vapor deposition (CVD) method, and the top-contact Ag source/drain electrodes (S/D) were deposited onto the films using a low-cost drop-on-demand inkjet-printing process without any masks and surface treatments. The electrical characteristics of FETs were comparable to those fabricated by conventional deposition methods such as photo- or electron beam lithography. The contact properties between the S/D and the semiconductor layer were also evaluated using the Y-function method and an analysis of the output characteristic at the low drain voltage regimes. Furthermore, the electrical instability under positive gate-bias stress was studied to investigate the charge-trapping mechanism of the FETs. CVD-grown large-area monolayer MoS2 FETs with inkjet-printed contacts may represent an attractive approach for realizing large-area and low-cost thin-film electronics.
authors.affiliation: Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University , Seoul 08826, Korea.
authors.forename: Tae-Young
authors.initials: TY
authors.lastname: Kim
authors.affiliation: Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors.forename: Matin
authors.initials: M
authors.lastname: Amani
authors.affiliation: Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.
authors.forename: Geun Ho
authors.initials: GH
authors.lastname: Ahn
authors.affiliation: Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University , Seoul 08826, Korea.
authors.forename: Younggul
authors.initials: Y
authors.lastname: Song
authors.affiliation: Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors.forename: Ali
authors.initials: A
authors.lastname: Javey
authors.affiliation: Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.
authors.forename: Seungjun
authors.initials: S
authors.lastname: Chung
authors.affiliation: Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University , Seoul 08826, Korea.
authors.forename: Takhee
authors.initials: T
authors.lastname: Lee
keywords: contact resistance; electronic transport properties; field-effect transistors; gate-bias stress effect; inkjet printing; molybdenum disulfide