title: High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites.
abstract: Nano-floating gate memory devices (NFGM) using metal nanoparticles (NPs) covered with an insulating polymer have been considered as a promising electronic device for the next-generation nonvolatile organic memory applications NPs. However, the transparency of the device with metal NPs is restricted to 60~70% due to the light absorption in the visible region caused by the surface plasmon resonance effects of metal NPs. To address this issue, we demonstrate a novel NFGM using the blends of hole-trapping poly (9-(4-vinylphenyl) carbazole) (PVPK) and electron-trapping ZnO NPs as the charge storage element. The memory devices exhibited a remarkably programmable memory window up to 60 V during the program/erase operations, which was attributed to the trapping/detrapping of charge carriers in ZnO NPs/PVPK composite. Furthermore, the devices showed the long-term retention time (>10(5) s) and WRER test (>200 cycles), indicating excellent electrical reliability and stability. Additionally, the fabricated transistor memory devices exhibited a relatively high transparency of 90% at the wavelength of 500 nm based on the spray-coated
  PSS as electrode, suggesting high potential for transparent organic electronic memory devices.
authors.affiliation: Department of Chemical Engineering, National Taiwan University, Taipei, 10617 Taiwan.
authors.forename: Chien-Chung
authors.initials: CC
authors.lastname: Shih
authors.affiliation: Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei, 10608.
authors.forename: Wen-Ya
authors.initials: WY
authors.lastname: Lee
authors.affiliation: Department of Chemical Engineering, National Taiwan University, Taipei, 10617 Taiwan.
authors.forename: Yu-Cheng
authors.initials: YC
authors.lastname: Chiu
authors.affiliation: Department of Chemical and Materials Engineering, National Central University, Taoyuan 32001, Taiwan.
authors.forename: Han-Wen
authors.initials: HW
authors.lastname: Hsu
authors.affiliation: Department of Chemical Engineering, National Taiwan University, Taipei, 10617 Taiwan.
authors.forename: Hsuan-Chun
authors.initials: HC
authors.lastname: Chang
authors.affiliation: Department of Chemical and Materials Engineering, National Central University, Taoyuan 32001, Taiwan.
authors.forename: Cheng-Liang
authors.initials: CL
authors.lastname: Liu
authors.affiliation: Department of Chemical Engineering, National Taiwan University, Taipei, 10617 Taiwan.
authors.forename: Wen-Chang
authors.initials: WC
authors.lastname: Chen
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