title: Parallel Stitching of 2D Materials.
abstract: Diverse parallel stitched 2D heterostructures, including metal-semiconductor, semiconductor-semiconductor, and insulator-semiconductor, are synthesized directly through selective "sowing" of aromatic molecules as the seeds in the chemical vapor deposition (CVD) method. The methodology enables the large-scale fabrication of lateral heterostructures, which offers tremendous potential for its application in integrated circuits.
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Xi
authors.initials: X
authors.lastname: Ling
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Yuxuan
authors.initials: Y
authors.lastname: Lin
authors.affiliation: Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Qiong
authors.initials: Q
authors.lastname: Ma
authors.affiliation: Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Ziqiang
authors.initials: Z
authors.lastname: Wang
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Yi
authors.initials: Y
authors.lastname: Song
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Lili
authors.initials: L
authors.lastname: Yu
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Shengxi
authors.initials: S
authors.lastname: Huang
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Wenjing
authors.initials: W
authors.lastname: Fang
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Xu
authors.initials: X
authors.lastname: Zhang
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Allen L
authors.initials: AL
authors.lastname: Hsu
authors.affiliation: Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Yaqing
authors.initials: Y
authors.lastname: Bie
authors.affiliation: Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 20013, Taiwan.
authors.forename: Yi-Hsien
authors.initials: YH
authors.lastname: Lee
authors.affiliation: Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, 11973, USA.
authors.forename: Yimei
authors.initials: Y
authors.lastname: Zhu
authors.affiliation: Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, 11973, USA.
authors.forename: Lijun
authors.initials: L
authors.lastname: Wu
authors.affiliation: Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.|Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Ju
authors.initials: J
authors.lastname: Li
authors.affiliation: Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Pablo
authors.initials: P
authors.lastname: Jarillo-Herrero
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.|Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Mildred
authors.initials: M
authors.lastname: Dresselhaus
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Tomás
authors.initials: T
authors.lastname: Palacios
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Jing
authors.initials: J
authors.lastname: Kong
keywords: MoS2; heterostructure; intergrated circuits; synthesis; two-dimensional materials