title: Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors.
abstract: Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando X-ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failure. The observed ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-driven oxygen migration.
authors.affiliation: Hewlett Packard Laboratories, 1501 Page Mill Rd, Palo Alto, CA, 94304, USA.|Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA.
authors.forename: Suhas
authors.initials: S
authors.lastname: Kumar
authors.affiliation: Hewlett Packard Laboratories, 1501 Page Mill Rd, Palo Alto, CA, 94304, USA.
authors.forename: Catherine E
authors.initials: CE
authors.lastname: Graves
authors.affiliation: Hewlett Packard Laboratories, 1501 Page Mill Rd, Palo Alto, CA, 94304, USA.
authors.forename: John Paul
authors.initials: JP
authors.lastname: Strachan
authors.affiliation: Hewlett Packard Laboratories, 1501 Page Mill Rd, Palo Alto, CA, 94304, USA.
authors.forename: Emmanuelle Merced
authors.initials: EM
authors.lastname: Grafals
authors.affiliation: Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Arthur L David
authors.initials: AL
authors.lastname: Kilcoyne
authors.affiliation: Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Tolek
authors.initials: T
authors.lastname: Tyliszczak
authors.affiliation: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA, 94025, USA.
authors.forename: Johanna Nelson
authors.initials: JN
authors.lastname: Weker
authors.affiliation: Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA.
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Nishi
authors.affiliation: Hewlett Packard Laboratories, 1501 Page Mill Rd, Palo Alto, CA, 94304, USA.
authors.forename: R Stanley
authors.initials: RS
authors.lastname: Williams
keywords: RRAM; memristors; oxygen migration; spectromicroscopy; thermophoresis