title: Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl4/H2 Microwave Plasma.
abstract: We developed an innovative approach of self-biased sputtering solid doping source process to synthesize doped crystalline Si film on flexible polyimide (PI) substrate via microwave-plasma-enhanced chemical vapor deposition (MWPECVD) using SiCl4/H2 mixture. In this process, P dopants or B dopants were introduced by sputtering the solid doping target through charged-ion bombardment in situ during high-density microwave plasma deposition. A strong correlation between the number of solid doping targets and the characteristics of doped Si films was investigated in detail. The results show that both P- and B-doped crystalline Si films possessed a dense columnar structure, and the crystallinity of these structures decreased with increasing the number of solid doping targets. The films also exhibited a high growth rate (>4.0 nm/s). Under optimal conditions, the maximum conductivity and corresponding carrier concentration were, respectively, 9.48 S/cm and 1.2 × 10(20) cm(-3) for P-doped Si film and 7.83 S/cm and 1.5 × 10(20) cm(-3) for B-doped Si film. Such high values indicate that the incorporation of dopant with high doping efficiency (around 40%) into the Si films was achieved regardless of solid doping sources used. Furthermore, a flexible crystalline Si film solar cell with substrate configuration was fabricated by using the structure of PI/Mo film/n-type Si film/i-type Si film/p-type Si film/ITO film/Al grid film. The best solar cell performance was obtained with an open-circuit voltage of 0.54 V, short-circuit current density of 19.18 mA/cm(2), fill factor of 0.65, and high energy conversion of 6.75%. According to the results of bending tests, the critical radius of curvature (RC) was 12.4 mm, and the loss of efficiency was less than 1% after the cyclic bending test for 100 cycles at RC, indicating superior flexibility and bending durability. These results represent important steps toward a low-cost approach to high-performance flexible crystalline Si film-based photovoltaic devices.
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University , No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan Republic of China.
authors.forename: Ping-Yen
authors.initials: PY
authors.lastname: Hsieh
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University , No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan Republic of China.
authors.forename: Chi-Young
authors.initials: CY
authors.lastname: Lee
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University , No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan Republic of China.
authors.forename: Nyan-Hwa
authors.initials: NH
authors.lastname: Tai
keywords: SiCl4/H2 microwave plasma; crystalline doped Si film; flexible crystalline Si film solar cell; self-biased sputtering solid doping source