title: Hierarchical mesoporous NiCo2O4 hollow nanocubes for supercapacitors.
abstract: In the present work, mesoporous NiCo2O4 hollow nanocubes are synthesized using a "coordinating etching & precipitating" (CEP) route. The hollow nanocubes are characterized using SEM, TEM, XRD, XPS and BET methods. The hollow nanocubes have a uniform morphology of 300-500 nm, a high surface area of 134.52 m(2) g(-1) and a mesoporous structure of 2.4-6 nm. These mesoporous NiCo2O4 hollow nanocubes exhibit the specific capacitance of 795.6 F g(-1) at a constant discharge current density of 1 A g(-1). The high specific capacitance and the stability of the NiCo2O4 hollow nanocube electrode are attributed to its large specific surface area and mesoporous structure. The specific capacity retention is 97.5% at a current density of 1 A g(-1) and 96.1% at a current density of 2 A g(-1) over 2000 charge-discharge cycles. The high specific capacitance and excellent cyclic stability indicate that NiCo2O4 hollow nanocubes are excellent supercapacitor electrode materials.
authors: Research Center of Materials Science, Beijing Institute of Technology, Beijing 100081, People's Republic of China. cbcao@bit.edu.cn and Material Institute, Shijiazhuang University of Economics, Shijiazhuang 050031, People's Republic of China.
authors: Chunrui
authors: C
authors: Zheng
authors: Research Center of Materials Science, Beijing Institute of Technology, Beijing 100081, People's Republic of China. cbcao@bit.edu.cn.
authors: Chuanbao
authors: C
authors: Cao
authors: Research Center of Materials Science, Beijing Institute of Technology, Beijing 100081, People's Republic of China. cbcao@bit.edu.cn and Hebei Academy of Social Science, Shijiazhuang 050051, People's Republic of China.
authors: Runling
authors: R
authors: Chang
authors: Research Center of Materials Science, Beijing Institute of Technology, Beijing 100081, People's Republic of China. cbcao@bit.edu.cn.
authors: Jianhua
authors: J
authors: Hou
authors: Research Center of Materials Science, Beijing Institute of Technology, Beijing 100081, People's Republic of China. cbcao@bit.edu.cn.
authors: Huazhang
authors: H
authors: Zhai