title: Nanoscale Control of Rewriteable Doping Patterns in Pristine Graphene/Boron Nitride Heterostructures.
abstract: Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic gating and chemical doping are the two most common methods to achieve local control of such doping. However, these approaches suffer from complicated fabrication processes that introduce contamination, change material properties irreversibly, and lack flexible pattern control. Here we demonstrate a clean, simple, and reversible technique that permits writing, reading, and erasing of doping patterns for 2D materials at the nanometer scale. We accomplish this by employing a graphene/boron nitride heterostructure that is equipped with a bottom gate electrode. By using electron transport and scanning tunneling microscopy (STM), we demonstrate that spatial control of charge doping can be realized with the application of either light or STM tip voltage excitations in conjunction with a gate electric field. Our straightforward and novel technique provides a new path toward on-demand graphene p-n junctions and ultrathin memory devices.
authors: Department of Physics, University of California , Berkeley, California 94720, United States.|Department of Physics, University of California , Santa Cruz, California 95064, United States.
authors: Jairo
authors: J
authors: Velasco
authors: Department of Physics, University of California , Berkeley, California 94720, United States.
authors: Long
authors: L
authors: Ju
authors: Department of Physics, University of California , Berkeley, California 94720, United States.
authors: Dillon
authors: D
authors: Wong
authors: Department of Physics, University of California , Berkeley, California 94720, United States.
authors: Salman
authors: S
authors: Kahn
authors: Department of Physics, University of California , Berkeley, California 94720, United States.
authors: Juwon
authors: J
authors: Lee
authors: Department of Physics, University of California , Berkeley, California 94720, United States.
authors: Hsin-Zon
authors: HZ
authors: Tsai
authors: Department of Physics, University of California , Berkeley, California 94720, United States.
authors: Chad
authors: C
authors: Germany
authors: Department of Physics, University of California , Berkeley, California 94720, United States.
authors: Sebastian
authors: S
authors: Wickenburg
authors: Department of Physics, University of California , Berkeley, California 94720, United States.
authors: Jiong
authors: J
authors: Lu
authors: National Institute for Materials Science , 1-1 Namiki, Tsukuba, 305-0044, Japan.
authors: Takashi
authors: T
authors: Taniguchi
authors: National Institute for Materials Science , 1-1 Namiki, Tsukuba, 305-0044, Japan.
authors: Kenji
authors: K
authors: Watanabe
authors: Department of Physics, University of California , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.|Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Alex
authors: A
authors: Zettl
authors: Department of Physics, University of California , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.|Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Feng
authors: F
authors: Wang
authors: Department of Physics, University of California , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.|Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Michael F
authors: MF
authors: Crommie
keywords: Graphene/boron nitride heterostructures; boron nitride defects; p−n junctions; scanning tunneling microscopy