title: Phase-Change Memory Materials by Design: A Strain Engineering Approach.
abstract: Van der Waals heterostructure superlattices of Sb2 Te1 and GeTe are strain-engineered to promote switchable atomic disordering, which is confined to the GeTe layer. Careful control of the strain in the structures presents a new degree of freedom to design the properties of functional superlattice structures for data storage and photonics applications.
authors: ACTA Lab, Singapore University of Technology and Design, 8 Somapah Road, 487372, Singapore.
authors: Xilin
authors: X
authors: Zhou
authors: ACTA Lab, Singapore University of Technology and Design, 8 Somapah Road, 487372, Singapore.
authors: Janne
authors: J
authors: Kalikka
authors: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
authors: Xinglong
authors: X
authors: Ji
authors: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
authors: Liangcai
authors: L
authors: Wu
authors: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
authors: Zhitang
authors: Z
authors: Song
authors: ACTA Lab, Singapore University of Technology and Design, 8 Somapah Road, 487372, Singapore.
authors: Robert E
authors: RE
authors: Simpson
keywords: interfacial phase-change memory; phase-change materials; strain engineering; van der Waals heterostructures