title: X-ray Reciprocal Space Mapping of Graded Al x Ga1 - x N Films and Nanowires.
abstract: The depth distribution of strain and composition in graded Al x Ga1 - x N films and nanowires (NWs) are studied theoretically using the kinematical theory of X-ray diffraction. By calculating [Formula: see text] reciprocal space maps (RSMs), we demonstrate significant differences in the intensity distributions from graded Al x Ga1 - x N films and NWs. We attribute these differences to relaxation of the substrate-induced strain on the NWs free side walls. Finally, we demonstrate that the developed X-ray reciprocal space map model allows for reliable depth profiles of strain and Al composition determination in both Al x Ga1 - x N films and NWs.
authors: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kyiv, Ukraine. grishastanchu@gmail.com.
authors: Hryhorii V
authors: HV
authors: Stanchu
authors: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kyiv, Ukraine. an.kuchuk@gmail.com.|Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA. an.kuchuk@gmail.com.
authors: Andrian V
authors: AV
authors: Kuchuk
authors: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kyiv, Ukraine. kladko@isp.kiev.ua.
authors: Vasyl P
authors: VP
authors: Kladko
authors: Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA. meware@uark.edu.
authors: Morgan E
authors: ME
authors: Ware
authors: Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA. ymazur@uark.edu.
authors: Yuriy I
authors: YI
authors: Mazur
authors: Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668, Warsaw, Poland. zytkie@ifpan.edu.pl.
authors: Zbigniew R
authors: ZR
authors: Zytkiewicz
authors: V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kyiv, Ukraine. belyaev@isp.kiev.ua.
authors: Alexander E
authors: AE
authors: Belyaev
authors: Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA. salamo@uark.edu.
authors: Gregory J
authors: GJ
authors: Salamo
keywords: Al x Ga1 − x N; Asymmetrical RSM; Graded films and nanowires; Kinematical theory