title: Topological modification of the electronic structure by Bi-bilayers lying deep inside bulk Bi₂Se₃.
abstract: We observe the modified surface states of an epitaxial thin film of a homologous series of (Bi2)m(Bi2Se3)n, as a topological insulator (TI), by angle-resolved photoemission spectroscopy measurements. A thin film with m : n  =  1 : 3 (Bi8Se9) has been grown with Bi2 bilayers embedded every other three quintuple layers (QLs) of Bi2Se3. Despite the reduced dimension of continuous QLs due to the Bi2 heterolayers, we find that the topological surface states stem from the inverted Bi and Se states and the topologically nontrivial structures are mainly based on the prototype of 3D TI Bi2Se3 without affecting the overall topological order.
authors: Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Korea.
authors: Paengro
authors: P
authors: Lee
authors: Jinwoong
authors: J
authors: Kim
authors: Jin Gul
authors: JG
authors: Kim
authors: Min-tae
authors: MT
authors: Ryu
authors: Hee-min
authors: HM
authors: Park
authors: Namdong
authors: N
authors: Kim
authors: Yongsam
authors: Y
authors: Kim
authors: Nam-Suk
authors: NS
authors: Lee
authors: Nicholas
authors: N
authors: Kioussis
authors: Seung-Hoon
authors: SH
authors: Jhi
authors: Jinwook
authors: J
authors: Chung