title: Single crystal functional oxides on silicon.
abstract: Single-crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism and so on that have the potential for completely new electronic applications. Direct synthesis of such oxides on silicon remains challenging because of the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. Here we report integration of thin (down to one unit cell) single crystalline, complex oxide films onto silicon substrates, by epitaxial transfer at room temperature. In a field-effect transistor using a transferred lead zirconate titanate layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single-crystal functional oxides on-demand on silicon.
authors: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California, USA.
authors: Saidur Rahman
authors: SR
authors: Bakaul
authors: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California, USA.|Department of Material Science and Engineering, University of California, Berkeley, California, USA.
authors: Claudy Rayan
authors: CR
authors: Serrao
authors: Department of Physics, University of California, Berkeley, California, USA.
authors: Michelle
authors: M
authors: Lee
authors: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California, USA.
authors: Chun Wing
authors: CW
authors: Yeung
authors: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California, USA.
authors: Asis
authors: A
authors: Sarker
authors: Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California, USA.
authors: Shang-Lin
authors: SL
authors: Hsu
authors: Department of Material Science and Engineering, University of California, Berkeley, California, USA.
authors: Ajay Kumar
authors: AK
authors: Yadav
authors: Department of Material Science and Engineering, University of California, Berkeley, California, USA.
authors: Liv
authors: L
authors: Dedon
authors: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California, USA.
authors: Long
authors: L
authors: You
authors: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California, USA.
authors: Asif Islam
authors: AI
authors: Khan
authors: Department of Material Science and Engineering, University of California, Berkeley, California, USA.
authors: James David
authors: JD
authors: Clarkson
authors: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California, USA.
authors: Chenming
authors: C
authors: Hu
authors: Department of Material Science and Engineering, University of California, Berkeley, California, USA.|Department of Physics, University of California, Berkeley, California, USA.|Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California, USA.
authors: Ramamoorthy
authors: R
authors: Ramesh
authors: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California, USA.|Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California, USA.
authors: Sayeef
authors: S
authors: Salahuddin