title: New Flexible Channels for Room Temperature Tunneling Field Effect Transistors.
abstract: Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under various bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (in-situ STM-TEM). As suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending.
authors: Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
authors: Boyi
authors: B
authors: Hao
authors: Department of Materials Science and Engineering, Michigan Technological University, Houghton, MI 49931, USA.
authors: Anjana
authors: A
authors: Asthana
authors: Department of Electrical and Computer Engineering, Michigan Technological University, Houghton, MI 49931, USA.
authors: Paniz Khanmohammadi
authors: PK
authors: Hazaveh
authors: Department of Electrical and Computer Engineering, Michigan Technological University, Houghton, MI 49931, USA.
authors: Paul L
authors: PL
authors: Bergstrom
authors: Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
authors: Douglas
authors: D
authors: Banyai
authors: Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
authors: Madhusudan A
authors: MA
authors: Savaikar
authors: Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
authors: John A
authors: JA
authors: Jaszczak
authors: Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.
authors: Yoke Khin
authors: YK
authors: Yap