title: Electron mobility in semi-metal HgCdTe quantum wells: dependence on the well width.
abstract: Energy spectra, carrier concentration and electron mobility are numerically modeled in intrinsic and n-type semi-metal HgCdTe quantum wells at T = 77 K. We present results for the electron mobility calculated in a model incorporating electron scattering on longitudinal optical phonons, charged impurities, and holes, and including the 2D electron gas screening for all mentioned scattering mechanisms. Inelasticity of electron-phonon scattering is treated by means of a direct iterative solution of Boltzmann transport equation. Comparison with the experimental data at liquid helium temperature is provided.
authors: Institute for Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kiev, 03028 Ukraine.
authors: E O
authors: EO
authors: Melezhik
authors: Institute for Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kiev, 03028 Ukraine.
authors: J V
authors: JV
authors: Gumenjuk-Sichevska
authors: Institute for Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kiev, 03028 Ukraine.
authors: F F
authors: FF
authors: Sizov
keywords: Boltzmann transport equation; HgTe; Inelastic scattering; Mobility; Screening