title: Theoretical characterisation of point defects on a MoS2 monolayer by scanning tunnelling microscopy.
abstract: Different S and Mo vacancies as well as their corresponding antisite defects in a free-standing MoS2 monolayer are analysed by means of scanning tunnelling microscopy (STM) simulations. Our theoretical methodology, based on the Keldysh nonequilibrium Green function formalism within the density functional theory (DFT) approach, is applied to simulate STM images for different voltages and tip heights. Combining the geometrical and electronic effects, all features of the different STM images can be explained, providing a valuable guide for future experiments. Our results confirm previous reports on S atom imaging, but also reveal a strong dependence on the applied bias for vacancies and antisite defects that include extra S atoms. By contrast, when additional Mo atoms cover the S vacancies, the MoS2 gap vanishes and a bias-independent bright protrusion is obtained in the STM image. Finally, we show that the inclusion of these point defects promotes the emergence of reactive dangling bonds that may act as efficient adsorption sites for external adsorbates.
authors: Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Campus de Fuente Nueva & CITIC, Campus de Aynadamar E-18071 Granada, Spain. SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay 91191 Gif-sur-Yvette Cedex, France.
authors: C
authors: C
authors: González
authors: B
authors: B
authors: Biel
authors: Y J
authors: YJ
authors: Dappe