title: Multilevel Resistance Switching Memory in La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) Heterostructure by Combined Straintronics-Spintronics.
abstract: We demonstrate a memory device with multifield switchable multilevel states at room temperature based on the integration of straintronics and spintronics in a La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) (011) heterostructure. By precisely controlling the electric field applied on the PMN-PT substrate, multiple nonvolatile resistance states can be generated in La2/3Ba1/3MnO3 films, which can be ascribed to the strain-modulated metal-insulator transition and phase separation of Manganite. Furthermore, because of the strong coupling between spin and charge degrees of freedom, the resistance of the La2/3Ba1/3MnO3 film can be readily modulated by magnetic field over a broad temperature range. Therefore, by combining electroresistance and magnetoresistance effects, multilevel resistance states with excellent retention and endurance properties can be achieved at room temperature with the coactions of electric and magnetic fields. The incorporation of ferroelastic strain and magnetic and resistive properties in memory cells suggests a promising approach for multistate, high-density, and low-power consumption electronic memory devices.
authors: Department of Applied Physics, Nanjing University of Science and Technology , Nanjing 210094, People's Republic of China.|National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University , Nanjing 210093, People's Republic of China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, People's Republic of China.
authors: Weiping
authors: W
authors: Zhou
authors: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University , Nanjing 210093, People's Republic of China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, People's Republic of China.
authors: Yuanqiang
authors: Y
authors: Xiong
authors: School of Physical and Mathematical Science, Nanjing Tech University , Nanjing 211816, People's Republic of China.
authors: Zhengming
authors: Z
authors: Zhang
authors: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University , Nanjing 210093, People's Republic of China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, People's Republic of China.
authors: Dunhui
authors: D
authors: Wang
authors: Department of Applied Physics, Nanjing University of Science and Technology , Nanjing 210094, People's Republic of China.
authors: Weishi
authors: W
authors: Tan
authors: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University , Nanjing 210093, People's Republic of China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, People's Republic of China.
authors: Qingqi
authors: Q
authors: Cao
authors: Center for Integrated Spintronic Devices (CISD), Hangzhou Dianzi University , Hangzhou, 310018, People's Republic of China.
authors: Zhenghong
authors: Z
authors: Qian
authors: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University , Nanjing 210093, People's Republic of China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, People's Republic of China.
authors: Youwei
authors: Y
authors: Du
keywords: heterostructure; multilevel memory; nonvolatile; resistance switching; spintronics; straintronics