title: Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices.
abstract: Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The relative contributions of field-like torques and damping-like torques to the magnetization switching induced by the electrical current are still under debate. Here, we describe a device based on a symmetric Pt/FM/Pt structure, in which we demonstrate a strong damping-like torque from the spin Hall effect and unmeasurable field-like torque from Rashba effect. The spin-orbit effective fields due to the spin Hall effect were investigated quantitatively and were found to be consistent with the switching effective fields after accounting for the switching current reduction due to thermal fluctuations from the current pulse. A non-linear dependence of deterministic switching of average Mz on the in-plane magnetic field was revealed, which could be explained and understood by micromagnetic simulation.
authors: SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
authors: Meiyin
authors: M
authors: Yang
authors: SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
authors: Kaiming
authors: K
authors: Cai
authors: Department of Physics, School of Sciences, Beijing Technology and Business University, Beijing 100048, China.
authors: Hailang
authors: H
authors: Ju
authors: School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom.
authors: Kevin William
authors: KW
authors: Edmonds
authors: Department of Materials Physics and Chemistry, University of Science and Technology Beijing, 100083, China.
authors: Guang
authors: G
authors: Yang
authors: Department of Physics, School of Sciences, Beijing Technology and Business University, Beijing 100048, China.
authors: Shuai
authors: S
authors: Liu
authors: Department of Physics, School of Sciences, Beijing Technology and Business University, Beijing 100048, China.
authors: Baohe
authors: B
authors: Li
authors: SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
authors: Bao
authors: B
authors: Zhang
authors: SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
authors: Yu
authors: Y
authors: Sheng
authors: Department of Materials Physics and Chemistry, University of Science and Technology Beijing, 100083, China.
authors: Shouguo
authors: S
authors: Wang
authors: SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
authors: Yang
authors: Y
authors: Ji
authors: SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
authors: Kaiyou
authors: K
authors: Wang