title: Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix.
abstract: A two-bit memory and quantized storage phenomenon are observed at room temperature for a device based on the traditional MOS structure with double-stacked Pt-nanocrystals (Pt-NCs). A 2.68 and 1.72 V flat band voltage shift (memory window) has been obtained when applying a ±7 V programming/erasing voltage to the structures with double-stacked Pt-NCs. The memory windows of 2.40 and 1.44 V can be retained after stress for 10(5) seconds, which correspond to 89.55% and 83.72% stored charges reserved. The quantized charge storage phenomenon characterized by current-voltage (J-V) hysteresis curves was detected at room temperature. The shrinkage of the memory window results from the decreasing tunneling probability, which strongly depends on the number of stacks. The traps, de-traps and quantum confinement effects of Pt-NCs may contribute to the improvement of dielectric characteristics and the two-bit memory behavior. The multi-bit memory and quantized storage behavior observed in the Pt-NCs stacks structure at room temperature might provide a feasible method for realizing the multi-bit storage in non-volatile flash memory devices.
authors: Institute for Clean Energy & Advanced Materials (ICEAM), Southwest University, Chongqing 400715, China.
authors: Guangdong
authors: G
authors: Zhou
authors: Bo
authors: B
authors: Wu
authors: Xiaoqin
authors: X
authors: Liu
authors: Ping
authors: P
authors: Li
authors: Shuangju
authors: S
authors: Zhang
authors: Bai
authors: B
authors: Sun
authors: Ankun
authors: A
authors: Zhou