title: Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect.
abstract: The anomalous Hall effect of a magnetic material is coupled to the nonlinear transport effect of a semiconductor material in a simple structure to achieve a large geometric magnetoresistance (MR) based on a diode-assisted mechanism. An extremely large MR (>10(4) %) at low magnetic fields (1 mT) is observed at room temperature. This MR device shows potential for use as a logic gate for the four basic Boolean logic operations.
authors: School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China.|Beijing National Center for Electron Microscopy, Tsinghua University, Beijing, 100084, P. R. China.
authors: Zhaochu
authors: Z
authors: Luo
authors: School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China.|Beijing National Center for Electron Microscopy, Tsinghua University, Beijing, 100084, P. R. China.
authors: Chengyue
authors: C
authors: Xiong
authors: Institute of Physics, Chinese Academy of Sciences, Beijing, 100084, P. R. China.
authors: Xu
authors: X
authors: Zhang
authors: School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China.|Beijing National Center for Electron Microscopy, Tsinghua University, Beijing, 100084, P. R. China.
authors: Zhen-Gang
authors: ZG
authors: Guo
authors: Institute of Physics, Chinese Academy of Sciences, Beijing, 100084, P. R. China.
authors: Jianwang
authors: J
authors: Cai
authors: School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China.|Beijing National Center for Electron Microscopy, Tsinghua University, Beijing, 100084, P. R. China.
authors: Xiaozhong
authors: X
authors: Zhang
keywords: electron transport; magnetic materials; magnetoresistance; nonlinear properties