title: Room temperature spin valve effect in NiFe/WS₂/Co junctions.
abstract: The two-dimensional (2D) layered electronic materials of transition metal dichalcogenides (TMDCs) have been recently proposed as an emerging canddiate for spintronic applications. Here, we report the exfoliated single layer WS2-intelayer based spin valve effect in NiFe/WS2/Co junction from room temperature to 4.2 K. The ratio of relative magnetoresistance in spin valve effect increases from 0.18% at room temperature to 0.47% at 4.2 K. We observed that the junction resistance decreases monotonically as temperature is lowered. These results revealed that semiconducting WS2 thin film works as a metallic conducting interlayer between NiFe and Co electrodes.
authors: Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan.|Department of Physics &Astronomy, Georgia State University, Atlanta, GA 30303, USA.
authors: Muhammad Zahir
authors: MZ
authors: Iqbal
authors: Department of Physics, College of Science, Majmaah University, Al-Zulfi 11932, Saudi Arabia.
authors: Muhammad Waqas
authors: MW
authors: Iqbal
authors: Department of Bioscience &Biotechnology, Sejong University, Seoul 143-747, Korea.
authors: Salma
authors: S
authors: Siddique
authors: Department of Physics &Graphene Research Institute, Sejong University, Seoul 143-747, Korea.
authors: Muhammad Farooq
authors: MF
authors: Khan
authors: Physics &Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia.
authors: Shahid Mahmood
authors: SM
authors: Ramay