title: Rational Hydrogenation for Enhanced Mobility and High Reliability on ZnO-based Thin Film Transistors: From Simulation to Experiment.
abstract: Hydrogenation is one of the effective methods for improving the performance of ZnO thin film transistors (TFTs), which originate from the fact that hydrogen (H) acts as a defect passivator and a shallow n-type dopant in ZnO materials. However, passivation accompanied by an excessive H doping of the channel region of a ZnO TFT is undesirable because high carrier density leads to negative threshold voltages. Herein, we report that Mg/H codoping could overcome the trade-off between performance and reliability in the ZnO TFTs. The theoretical calculation suggests that the incorporation of Mg in hydrogenated ZnO decrease the formation energy of interstitial H and increase formation energy of O-vacancy (VO). The experimental results demonstrate that the existence of the diluted Mg in hydrogenated ZnO TFTs could be sufficient to boost up mobility from 10 to 32.2 cm(2)/(V s) at a low carrier density (∼2.0 × 10(18) cm(-3)), which can be attributed to the decreased electron effective mass by surface band bending. The all results verified that the Mg/H codoping can significantly passivate the VO to improve device reliability and enhance mobility. Thus, this finding clearly points the way to realize high-performance metal oxide TFTs for low-cost, large-volume, flexible electronics.
authors: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.|School of Mathematics and Information Sciences, North China University of Water Resources and Electric Power , Zhengzhou 450046, China.
authors: Lei
authors: L
authors: Xu
authors: Department of Physics, Southeast University , Nanjing 211189, China.
authors: Qian
authors: Q
authors: Chen
authors: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors: Lei
authors: L
authors: Liao
authors: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors: Xingqiang
authors: X
authors: Liu
authors: Department of Physics, National Sun Yat-Sen University , Kaohsiung 804, Taiwan.
authors: Ting-Chang
authors: TC
authors: Chang
authors: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University , Kaohsiung 804, Taiwan.
authors: Kuan-Chang
authors: KC
authors: Chang
authors: Department of Materials and Optoelectronic Science, National Sun Yat-Sen University , Kaohsiung 804, Taiwan.
authors: Tsung-Ming
authors: TM
authors: Tsai
authors: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors: Changzhong
authors: C
authors: Jiang
authors: Department of Physics, Southeast University , Nanjing 211189, China.
authors: Jinlan
authors: J
authors: Wang
authors: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors: Jinchai
authors: J
authors: Li
keywords: ZnO; hydrogenation; mobility; reliability; thin film transistors