title: Chemical Bath Deposition of p-Type Transparent, Highly Conducting (CuS)x:(ZnS)1-x Nanocomposite Thin Films and Fabrication of Si Heterojunction Solar Cells.
abstract: P-type transparent conducting films of nanocrystalline (CuS)x:(ZnS)1-x were synthesized by facile and low-cost chemical bath deposition. Wide angle X-ray scattering (WAXS) and high resolution transmission electron microscopy (HRTEM) were used to evaluate the nanocomposite structure, which consists of sub-5 nm crystallites of sphalerite ZnS and covellite CuS. Film transparency can be controlled by tuning the size of the nanocrystallites, which is achieved by adjusting the concentration of the complexing agent during growth; optimal films have optical transmission above 70% in the visible range of the spectrum. The hole conductivity increases with the fraction of the covellite phase and can be as high as 1000 S cm(-1), which is higher than most reported p-type transparent materials and approaches that of n-type transparent materials such as indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) synthesized at a similar temperature. Heterojunction p-(CuS)x:(ZnS)1-x/n-Si solar cells were fabricated with the nanocomposite film serving as a hole-selective contact. Under 1 sun illumination, an open circuit voltage of 535 mV was observed. This value compares favorably to other emerging heterojunction Si solar cells which use a low temperature process to fabricate the contact, such as single-walled carbon nanotube/Si (370-530 mV) and graphene/Si (360-552 mV).
authors: Department of Materials Science, Fudan University , Shanghai 200438, P. R. China.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Xiaojie
authors: X
authors: Xu
authors: Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: James
authors: J
authors: Bullock
authors: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States.
authors: Laura T
authors: LT
authors: Schelhas
authors: Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.|Swiss Federal Institute of Technology (EPFL) , Lausanne 1015, Switzerland.
authors: Elias Z
authors: EZ
authors: Stutz
authors: Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Jose J
authors: JJ
authors: Fonseca
authors: Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Mark
authors: M
authors: Hettick
authors: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States.
authors: Vanessa L
authors: VL
authors: Pool
authors: School of Materials Science and Engineering, Nanyang Technological University , Singapore 639798.
authors: Kong Fai
authors: KF
authors: Tai
authors: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States.
authors: Michael F
authors: MF
authors: Toney
authors: Department of Materials Science, Fudan University , Shanghai 200438, P. R. China.
authors: Xiaosheng
authors: X
authors: Fang
authors: Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Ali
authors: A
authors: Javey
authors: School of Materials Science and Engineering, Nanyang Technological University , Singapore 639798.
authors: Lydia Helena
authors: LH
authors: Wong
authors: Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors: Joel W
authors: JW
authors: Ager
keywords: chemical bath deposition; heterojunctions; p-type; photovoltaics; transparent conducting materials