title: Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film.
abstract: Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance.
authors: IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Korea.
authors: Jeongmin
authors: J
authors: Park
authors: IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Korea.
authors: Haeyong
authors: H
authors: Kang
authors: IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Korea.
authors: Kyeong Tae
authors: KT
authors: Kang
authors: IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Korea.
authors: Yoojoo
authors: Y
authors: Yun
authors: IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Korea.
authors: Young Hee
authors: YH
authors: Lee
authors: IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Korea.
authors: Woo Seok
authors: WS
authors: Choi
authors: IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University , Suwon 440-746, Korea.
authors: Dongseok
authors: D
authors: Suh
keywords: Graphene; SrTiO3; epitaxial thin film; gate voltage scaling; high-k; quantum Hall conductance