title: Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer.
abstract: Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (±2 V) and subthreshold swing (SS) (122-161 mV dec(-1)), high effective mobility (up to 17.6-37.7 cm(2) V(-1) s(-1)) and high on/off ratio (10(4)-10(7)). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption.
authors: Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China. jwzhao2011@sinano.ac.cn cqma2011@sinano.ac.cn zcui2009@sinano.ac.cn.
authors: Wenya
authors: W
authors: Xu
authors: Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China. jwzhao2011@sinano.ac.cn cqma2011@sinano.ac.cn zcui2009@sinano.ac.cn.
authors: Junyan
authors: J
authors: Dou
authors: Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China. jwzhao2011@sinano.ac.cn cqma2011@sinano.ac.cn zcui2009@sinano.ac.cn.
authors: Jianwen
authors: J
authors: Zhao
authors: College of Chemistry, Beijing Normal University, Beijing, 100875, PR China.
authors: Hongwei
authors: H
authors: Tan
authors: Institute of High Performance Computing, Agency for Science, Technology and Research, 138632, Singapore.
authors: Jun
authors: J
authors: Ye
authors: Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan.
authors: Masayoshi
authors: M
authors: Tange
authors: Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China. jwzhao2011@sinano.ac.cn cqma2011@sinano.ac.cn zcui2009@sinano.ac.cn.
authors: Wei
authors: W
authors: Gao
authors: Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China. jwzhao2011@sinano.ac.cn cqma2011@sinano.ac.cn zcui2009@sinano.ac.cn and School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, PR China.
authors: Weiwei
authors: W
authors: Xu
authors: Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China. jwzhao2011@sinano.ac.cn cqma2011@sinano.ac.cn zcui2009@sinano.ac.cn and School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, PR China.
authors: Xiang
authors: X
authors: Zhang
authors: Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China. jwzhao2011@sinano.ac.cn cqma2011@sinano.ac.cn zcui2009@sinano.ac.cn.
authors: Wenrui
authors: W
authors: Guo
authors: Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China. jwzhao2011@sinano.ac.cn cqma2011@sinano.ac.cn zcui2009@sinano.ac.cn.
authors: Changqi
authors: C
authors: Ma
authors: CNT-Application Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan.
authors: Toshiya
authors: T
authors: Okazaki
authors: Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China. jwzhao2011@sinano.ac.cn cqma2011@sinano.ac.cn zcui2009@sinano.ac.cn.
authors: Kai
authors: K
authors: Zhang
authors: Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China. jwzhao2011@sinano.ac.cn cqma2011@sinano.ac.cn zcui2009@sinano.ac.cn.
authors: Zheng
authors: Z
authors: Cui