title: Reply to "Comment on 'Metal Semiconductor Field-Effect Transistor with MoS₂/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed'".
authors: Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
authors: Jin Sung
authors: JS
authors: Kim
authors: Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
authors: Hee Sung
authors: HS
authors: Lee
authors: Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
authors: Seongil
authors: S
authors: Im