title: Quasi Two-Dimensional Dye-Sensitized In2O3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications.
abstract: We report the development of dye-sensitized thin-film phototransistors consisting of an ultrathin layer (<10 nm) of indium oxide (In2O3) the surface of which is functionalized with a self-assembled monolayer of the light absorbing organic dye D102. The resulting transistors exhibit a preferential color photoresponse centered in the wavelength region of ∼500 nm with a maximum photosensitivity of ∼10(6) and a responsivity value of up to 2 × 10(3) A/W. The high photoresponse is attributed to internal signal gain and more precisely to charge carriers generated upon photoexcitation of the D102 dye which lead to the generation of free electrons in the semiconducting layer and to the high photoresponse measured. Due to the small amount of absorption of visible photons, the hybrid In2O3/D102 bilayer channel appears transparent with an average optical transmission of >92% in the wavelength range 400-700 nm. Importantly, the phototransistors are processed from solution-phase at temperatures below 200 °C hence making the technology compatible with inexpensive and temperature sensitive flexible substrate materials such as plastic.
authors: Centre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London , London SW7 2BW, United Kingdom.
authors: Alexander D
authors: AD
authors: Mottram
authors: Centre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London , London SW7 2BW, United Kingdom.
authors: Yen-Hung
authors: YH
authors: Lin
authors: Centre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London , London SW7 2BW, United Kingdom.|Department of Materials Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology , Wangchan, Rayong 21210, Thailand.
authors: Pichaya
authors: P
authors: Pattanasattayavong
authors: Materials Science and Engineering, Division of Physical Sciences and Engineering, Solar and Photovoltaics Engineering Research Center (SPERC), King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia.
authors: Kui
authors: K
authors: Zhao
authors: Materials Science and Engineering, Division of Physical Sciences and Engineering, Solar and Photovoltaics Engineering Research Center (SPERC), King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia.
authors: Aram
authors: A
authors: Amassian
authors: Centre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London , London SW7 2BW, United Kingdom.
authors: Thomas D
authors: TD
authors: Anthopoulos
keywords: indium oxide; metal oxide transistor; photodetector; photosensitivity; phototransistor; responsivity