title: Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications.
abstract: Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called "Si photonics"). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates.
authors: Korea Institute of Science and Technology (KIST), Hwarangno 14-gil 5, Seongbuk-gu, Seoul, 136-791, Korea.|Department of Materials Science and Engineering, Seoul National University, Gwanak-gu, Seoul, 151-742, Korea.
authors: Dae-Myeong
authors: DM
authors: Geum
authors: Korea Institute of Science and Technology (KIST), Hwarangno 14-gil 5, Seongbuk-gu, Seoul, 136-791, Korea.
authors: Min-Su
authors: MS
authors: Park
authors: Korea Photonics Technology Institute (KOPTI), Cheomdan venture-ro 108-gil 9, Buk-gu, Gwanju-si, 500-799, Korea.
authors: Ju Young
authors: JY
authors: Lim
authors: Korea Institute of Science and Technology (KIST), Hwarangno 14-gil 5, Seongbuk-gu, Seoul, 136-791, Korea.
authors: Hyun-Duk
authors: HD
authors: Yang
authors: Korea Institute of Science and Technology (KIST), Hwarangno 14-gil 5, Seongbuk-gu, Seoul, 136-791, Korea.
authors: Jin Dong
authors: JD
authors: Song
authors: Korea Advanced Nanofab Center (KANC), Gwanggyo-ro 109, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-270, Korea.
authors: Chang Zoo
authors: CZ
authors: Kim
authors: Department of Materials Science and Engineering, Seoul National University, Gwanak-gu, Seoul, 151-742, Korea.
authors: Euijoon
authors: E
authors: Yoon
authors: Korea Institute of Science and Technology (KIST), Hwarangno 14-gil 5, Seongbuk-gu, Seoul, 136-791, Korea.
authors: SangHyeon
authors: S
authors: Kim
authors: Korea Institute of Science and Technology (KIST), Hwarangno 14-gil 5, Seongbuk-gu, Seoul, 136-791, Korea.
authors: Won Jun
authors: WJ
authors: Choi