title: A 250 mV Cu/SiO2/W Memristor with Half-Integer Quantum Conductance States.
abstract: Memristive devices, whose conductance depends on previous programming history, are of significant interest for building nonvolatile memory and brain-inspired computing systems. Here, we report half-integer quantized conductance transitions G = (n/2) (2e(2)/h) for n = 1, 2, 3, etc., in Cu/SiO2/W memristive devices observed below 300 mV at room temperature. This is attributed to the nanoscale filamentary nature of Cu conductance pathways formed inside SiO2. Retention measurements also show spontaneous filament decay with quantized conductance levels. Numerical simulations shed light into the dynamics underlying the data retention loss mechanisms and provide new insights into the nanoscale physics of memristive devices and trade-offs involved in engineering them for computational applications.
authors: Department of Electrical Engineering, Indian Institute of Technology Bombay , Mumbai, Maharashtra 400076, India.
authors: S R
authors: SR
authors: Nandakumar
authors: Institut des Nanotechnologies de Lyon, CNRS, École Centrale de Lyon, Université de Lyon , 69134 Ecully, France.
authors: Marie
authors: M
authors: Minvielle
authors: Institut des Nanotechnologies de Lyon, CNRS, École Centrale de Lyon, Université de Lyon , 69134 Ecully, France.
authors: Saurabh
authors: S
authors: Nagar
authors: Institut des Nanotechnologies de Lyon, CNRS, École Centrale de Lyon, Université de Lyon , 69134 Ecully, France.
authors: Catherine
authors: C
authors: Dubourdieu
authors: Department of Electrical Engineering, Indian Institute of Technology Bombay , Mumbai, Maharashtra 400076, India.
authors: Bipin
authors: B
authors: Rajendran
keywords: Cu; Memristor; SiO2; filamentary conduction; half-integer quantization; nanoelectronics; resistive switching