title: The memory effect of magnetoelectric coupling in FeGaB/NiTi/PMN-PT multiferroic heterostructure.
abstract: Magnetoelectric coupling effect has provided a power efficient approach in controlling the magnetic properties of ferromagnetic materials. However, one remaining issue of ferromagnetic/ferroelectric magnetoelectric bilayer composite is that the induced effective anisotropy disappears with the removal of the electric field. The introducing of the shape memory alloys may prevent such problem by taking the advantage of its shape memory effect. Additionally, the shape memory alloy can also "store" the magnetoelectric coupling before heat release, which introduces more functionality to the system. In this paper, we study a FeGaB/NiTi/PMN-PT multiferroic heterostructure, which can be operating in different states with electric field and temperature manipulation. Such phenomenon is promising for tunable multiferroic devices with multi-functionalities.
authors: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China.
authors: Ziyao
authors: Z
authors: Zhou
authors: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China.
authors: Shishun
authors: S
authors: Zhao
authors: Electrical and Computer Engineering Department, Northeastern University, Boston, MA 02115, USA.
authors: Yuan
authors: Y
authors: Gao
authors: Electrical and Computer Engineering Department, Northeastern University, Boston, MA 02115, USA.
authors: Xinjun
authors: X
authors: Wang
authors: Electrical and Computer Engineering Department, Northeastern University, Boston, MA 02115, USA.
authors: Tianxiang
authors: T
authors: Nan
authors: Electrical and Computer Engineering Department, Northeastern University, Boston, MA 02115, USA.
authors: Nian X
authors: NX
authors: Sun
authors: Center of Microwave and Millimeter-Wave Technology, School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China.
authors: Xi
authors: X
authors: Yang
authors: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China.|Collaborative Innovation Center of High-End Manufacturing Equipment, Xi'an Jiaotong University, Xi'an 710049, China.
authors: Ming
authors: M
authors: Liu