title: A New ZrCuSiAs-Type Superconductor: ThFeAsN.
abstract: We report the first nitrogen-containing iron-pnictide superconductor ThFeAsN, which is synthesized by a solid-state reaction in an evacuated container. The compound crystallizes in a ZrCuSiAs-type structure with the space group P4/nmm and lattice parameters a = 4.0367(1) Å and c = 8.5262(2) Å at 300 K. The electrical resistivity and dc magnetic susceptibility measurements indicate superconductivity at 30 K for the nominally undoped ThFeAsN.
authors: Department of Physics, Shandong University of Technology , Zibo 255049, China.
authors: Cao
authors: C
authors: Wang
authors: Department of Physics and State Key Lab of Silicon Materials, Zhejiang University , Hangzhou 310027, China.
authors: Zhi-Cheng
authors: ZC
authors: Wang
authors: Department of Physics, Shandong University of Technology , Zibo 255049, China.
authors: Yu-Xue
authors: YX
authors: Mei
authors: Department of Physics, Hangzhou Normal University , Hangzhou 310036, China.
authors: Yu-Ke
authors: YK
authors: Li
authors: Department of Physics, Hangzhou Normal University , Hangzhou 310036, China.
authors: Lin
authors: L
authors: Li
authors: Department of Physics and State Key Lab of Silicon Materials, Zhejiang University , Hangzhou 310027, China.
authors: Zhang-Tu
authors: ZT
authors: Tang
authors: Department of Physics and State Key Lab of Silicon Materials, Zhejiang University , Hangzhou 310027, China.
authors: Yi
authors: Y
authors: Liu
authors: Department of Physics and State Key Lab of Silicon Materials, Zhejiang University , Hangzhou 310027, China.
authors: Pan
authors: P
authors: Zhang
authors: Department of Physics and State Key Lab of Silicon Materials, Zhejiang University , Hangzhou 310027, China.
authors: Hui-Fei
authors: HF
authors: Zhai
authors: Department of Physics and State Key Lab of Silicon Materials, Zhejiang University , Hangzhou 310027, China.|Collaborative Innovation Centre of Advanced Microstructures, Nanjing 210093, China.
authors: Zhu-An
authors: ZA
authors: Xu
authors: Department of Physics and State Key Lab of Silicon Materials, Zhejiang University , Hangzhou 310027, China.|Collaborative Innovation Centre of Advanced Microstructures, Nanjing 210093, China.
authors: Guang-Han
authors: GH
authors: Cao