title: TCNQ Interlayers for Colloidal Quantum Dot Light-Emitting Diodes.
abstract: CdSe/CdS/ZnS quantum dot light-emitting diodes (QD-LEDs) show increased brightness (from ca. 18 000 to 27 000 cd m(-2) ) with 7,7,8,8-tetracyanoquinodimethane (TCNQ) between the QD and electron-transfer layers of ZnO nanoparticles. As QD/ZnO layers are known to have interface defects, our finding leads to the importance of interface engineering for QD-LEDs. Although the photoluminescent intensity and decay lifetime of ZnO/TCNQ/QD layers are similar to those of ZnO/QD layers, cyclic voltammetry suggests improved charge transfer of TCNQ/ZnO layers compared to that of pure ZnO layers. This helps us to understand the mechanism of electrically driven QD-LED behavior, which differs from that of conventional solid-state LEDs, and enables the rational design of QD-based optoelectronic devices.
authors: Device Laboratory, Samsung Advanced Institute of Technology, Suwon, Gyeonggi-do, 16676, South Korea. wk.koh@samsung.com.
authors: Weon-kyu
authors: WK
authors: Koh
authors: Analytical Engineering Group, Samsung Advanced Institute of Technology, Suwon, Gyeonggi-do, 16676, South Korea.
authors: Taeho
authors: T
authors: Shin
authors: Analytical Engineering Group, Samsung Advanced Institute of Technology, Suwon, Gyeonggi-do, 16676, South Korea.
authors: Changhoon
authors: C
authors: Jung
authors: Device Laboratory, Samsung Advanced Institute of Technology, Suwon, Gyeonggi-do, 16676, South Korea.
authors: Dr-Kyung-Sang
authors: DK
authors: Cho
keywords: 7,7,8,8-tetracyanoquinodimethane; charge transfer; interlayers; light-emitting diodes; quantum dots