title: Dispersion of Phonon Surface Polaritons in ZnGeP2: Anisotropy and Temperature Impacts.
abstract: Zinc germanium diphosphide (ZnGeP2) is an attractive and promising functional material for different devices of the nano- and optoelectronics. In this paper, dispersion of phonon surface polaritons (PSPs) in ZnGeP2 has been studied in the 200-500-cm(-1) spectral range at 4 and 300 K. Dispersion of "real" and "virtual" PSPs were calculated for C-axis being normal and parallel to the surface. Anisotropy in ZnGeP2 leads to the different numbers of PSP dispersion branches for different orientations of the sample. The temperature-dependent phonon contributions in the dielectric permittivity shift dispersion of the surface polaritons in ZnGeP2 to the higher wavenumbers at 4 K. We have shown that experimental dispersion of PSP is in agreement with theory.
authors: Department of Semiconductor Heterostructures, V.E. Lashkarev Institute for Semiconductor Physics of NAS of Ukraine, 45 Nauki av., Kyiv, 03028, Ukraine. Konstantin@shportko.com.
authors: K V
authors: KV
authors: Shportko
authors: Institute for Experimental Physics and Condensed Matter, Heinrich Heine University Duesseldorf, Kufuerstenstr. 32, Ellenz-Poltersdorf, 56 821, Duesseldorf, Germany. otto@uni-duesseldorf.de.
authors: A
authors: A
authors: Otto
authors: Department of Semiconductor Heterostructures, V.E. Lashkarev Institute for Semiconductor Physics of NAS of Ukraine, 45 Nauki av., Kyiv, 03028, Ukraine.
authors: E F
authors: EF
authors: Venger
keywords: Anisotropy; Low temperature; Phonon; Single crystal; Surface polariton