title: Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters.
abstract: Complementary inverters consisting of p-type organic and n-type metal oxide semiconductors have received considerable attention as key elements for realizing low-cost and large-area future electronics. Solution-processed ZnO thin-film transistors (TFTs) have great potential for use in hybrid complementary inverters as n-type load transistors because of the low cost of their fabrication process and natural abundance of active materials. The integration of a single ZnO TFT into an inverter requires the development of a simple patterning method as an alternative to conventional time-consuming and complicated photolithography techniques. In this study, we used a photocurable polymer precursor, zinc acrylate (or zinc diacrylate, ZDA), to conveniently fabricate photopatternable ZnO thin films for use as the active layers of n-type ZnO TFTs. UV-irradiated ZDA thin films became insoluble in developing solvent as the acrylate moiety photo-cross-linked; therefore, we were able to successfully photopattern solution-processed ZDA thin films using UV light. We studied the effects of addition of a tiny amount of indium dopant on the transistor characteristics of the photopatterned ZnO thin films and demonstrated low-voltage operation of the ZnO TFTs within ±3 V by utilizing Al2O3/TiO2 laminate thin films or ion-gels as gate dielectrics. By combining the ZnO TFTs with p-type pentacene TFTs, we successfully fabricated organic/inorganic hybrid complementary inverters using solution-processed and photopatterned ZnO TFTs.
authors: Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology , Pohang, North Gyeongsang 790-784, Republic of Korea.
authors: Yong Jin
authors: YJ
authors: Jeong
authors: Department of Polymer Science and Engineering, Korea National University of Transportation , Chungju, North Chungcheong, Republic of Korea.
authors: Tae Kyu
authors: TK
authors: An
authors: Analytical Science Laboratory, Samsung Advanced Institute of Technology (SAIT) , Yongin, Gyeonggi 446-712, Republic of Korea.
authors: Dong-Jin
authors: DJ
authors: Yun
authors: Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology , Pohang, North Gyeongsang 790-784, Republic of Korea.
authors: Lae Ho
authors: LH
authors: Kim
authors: Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology , Pohang, North Gyeongsang 790-784, Republic of Korea.
authors: Seonuk
authors: S
authors: Park
authors: Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology , Pohang, North Gyeongsang 790-784, Republic of Korea.
authors: Yebyeol
authors: Y
authors: Kim
authors: Smart I/O Control Device Research Section, Electronics and Telecommunications Research Institute , Daejeon, 305-700, Republic of Korea.
authors: Sooji
authors: S
authors: Nam
authors: Department of Chemical Engineering, Inha University , Incheon 402-751, Republic of Korea.
authors: Keun Hyung
authors: KH
authors: Lee
authors: School of Chemical Engineering, Yeungnam University , Gyeongsan, North Gyeongsang 712-749, Republic of Korea.
authors: Se Hyun
authors: SH
authors: Kim
authors: Department of Energy Engineering, Hanyang University , Seoul, 133-791, Republic of Korea.
authors: Jaeyoung
authors: J
authors: Jang
authors: Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology , Pohang, North Gyeongsang 790-784, Republic of Korea.
authors: Chan Eon
authors: CE
authors: Park
keywords: ZnO; complementary inverters; low-voltage operation; oxide thin-film transistors; solution process; zinc acrylate