title: Self-induced growth of vertical GaN nanowires on silica.
abstract: We study the self-induced growth of GaN nanowires on silica. Although the amorphous structure of this substrate offers no possibility of an epitaxial relationship, the nanowires are remarkably aligned with the substrate normal whereas, as expected, their in-plane orientation is random. Their structural and optical characteristics are compared to those of GaN nanowires grown on standard crystalline Si (111) substrates. The polarity inversion domains are much less frequent, if not totally absent, in the nanowires grown on silica, which we find to be N-polar. This work demonstrates that high-quality vertical GaN nanowires can be elaborated without resorting to bulk crystalline substrates.
authors.affiliation: Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Université Paris-Saclay, Route de Nozay, F-91460 Marcoussis, France. Institut d'Electronique Fondamentale (IEF), UMR 8622 CNRS, Université Paris-Saclay, F-91405 Orsay cedex, France.
authors.forename: V
authors.initials: V
authors.lastname: Kumaresan
authors.forename: L
authors.initials: L
authors.lastname: Largeau
authors.forename: F
authors.initials: F
authors.lastname: Oehler
authors.forename: H
authors.initials: H
authors.lastname: Zhang
authors.forename: O
authors.initials: O
authors.lastname: Mauguin
authors.forename: F
authors.initials: F
authors.lastname: Glas
authors.forename: N
authors.initials: N
authors.lastname: Gogneau
authors.forename: M
authors.initials: M
authors.lastname: Tchernycheva
authors.forename: J-C
authors.initials: JC
authors.lastname: Harmand