title: Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation.
abstract: A novel vertical 3D RRAM structure with greatly improved reliability behavior is proposed and experimentally demonstrated through basically compatible process featuring self-localized switching region by sidewall electrode oxidation. Compared with the conventional structure, due to the effective confinement of the switching region, the newly-proposed structure shows about two orders higher endurance (>10(8) without verification operation) and better retention (>180h@150 °C), as well as high uniformity. Corresponding model is put forward, on the base of which thorough theoretical analysis and calculations are conducted as well, demonstrating that, resulting from the physically-isolated switching from neighboring cells, the proposed structure exhibits dramatically improved reliability due to effective suppression of thermal effects and oxygen vacancies diffusion interference, indicating that this novel structure is very promising for future high density 3D RRAM application.
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China.
authors.forename: Muxi
authors.initials: M
authors.lastname: Yu
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China.
authors.forename: Yimao
authors.initials: Y
authors.lastname: Cai
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China.
authors.forename: Zongwei
authors.initials: Z
authors.lastname: Wang
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China.
authors.forename: Yichen
authors.initials: Y
authors.lastname: Fang
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China.
authors.forename: Yefan
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China.
authors.forename: Zhizhen
authors.initials: Z
authors.lastname: Yu
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China.
authors.forename: Yue
authors.initials: Y
authors.lastname: Pan
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China.
authors.forename: Zhenxing
authors.initials: Z
authors.lastname: Zhang
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China.
authors.forename: Jing
authors.initials: J
authors.lastname: Tan
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China.
authors.forename: Xue
authors.initials: X
authors.lastname: Yang
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China.
authors.forename: Ming
authors.initials: M
authors.lastname: Li
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China.
authors.forename: Ru
authors.initials: R
authors.lastname: Huang