title: In Situ Characterization of the Local Work Function along Individual Free Standing Nanowire by Electrostatic Deflection.
abstract: In situ characterization of the work function of quasi one dimensional nanomaterials is essential for exploring their applications. Here we proposed to use the electrostatic deflection induced by work function difference between nanoprobe and nanowire for in situ measuring the local work function along a free standing nanowire. The physical mechanism for the measurement was discussed in details and a parabolic relationship between the deflection and the potential difference was derived. As a demonstration, measurement of the local work functions on the tip and the sidewall of a ZnO nanowire with Au catalyst at its end and a LaB6 nanowire have been achieved with good accuracy.
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangdong 510275, People's Republic of China.|Guangdong Province Key Lab of Display Material and Technology, Sun Yat-sen University, Guangdong 510275, People's Republic of China.|School of Physics and Engineering, Sun Yat-sen University, Guangdong 510275, People's Republic of China.
authors.forename: Yicong
authors.initials: Y
authors.lastname: Chen
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangdong 510275, People's Republic of China.|School of Physics and Engineering, Sun Yat-sen University, Guangdong 510275, People's Republic of China.
authors.forename: Chengchun
authors.initials: C
authors.lastname: Zhao
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangdong 510275, People's Republic of China.|School of Physics and Engineering, Sun Yat-sen University, Guangdong 510275, People's Republic of China.
authors.forename: Feng
authors.initials: F
authors.lastname: Huang
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangdong 510275, People's Republic of China.|Guangdong Province Key Lab of Display Material and Technology, Sun Yat-sen University, Guangdong 510275, People's Republic of China.|School of Physics and Engineering, Sun Yat-sen University, Guangdong 510275, People's Republic of China.
authors.forename: Runze
authors.initials: R
authors.lastname: Zhan
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangdong 510275, People's Republic of China.|Guangdong Province Key Lab of Display Material and Technology, Sun Yat-sen University, Guangdong 510275, People's Republic of China.|School of Microelectronics, Sun Yat-sen University, Guangdong 510275, People's Republic of China.
authors.forename: Shaozhi
authors.initials: S
authors.lastname: Deng
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangdong 510275, People's Republic of China.|Guangdong Province Key Lab of Display Material and Technology, Sun Yat-sen University, Guangdong 510275, People's Republic of China.|School of Microelectronics, Sun Yat-sen University, Guangdong 510275, People's Republic of China.
authors.forename: Ningsheng
authors.initials: N
authors.lastname: Xu
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangdong 510275, People's Republic of China.|Guangdong Province Key Lab of Display Material and Technology, Sun Yat-sen University, Guangdong 510275, People's Republic of China.|School of Physics and Engineering, Sun Yat-sen University, Guangdong 510275, People's Republic of China.
authors.forename: Jun
authors.initials: J
authors.lastname: Chen