title: Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates.
abstract: A self-powered ultraviolet (UV) photodetector (PD) based on p-NiO and n-ZnO was fabricated using low-temperature sputtering technique on indium doped tin oxide (ITO) coated plastic polyethylene terephthalate (PET) substrates. Thep-nheterojunction showed very fast temporal photoresponse with excellent quantum efficiency of over 63% under UV illumination at an applied reverse bias of 1.2 V. The engineered ultrathin Ti/Au top metal contacts and UV transparent PET/ITO substrates allowed the PDs to be illuminated through either front or back side. Morphology, structural, chemical and optical properties of sputtered NiO and ZnO films were also investigated.
authors.affiliation: Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA; Department of Electrical and Computer Engineering, George Mason University, 4400 University Drive, Fairfax, VA 22030, USA.
authors.forename: Md Rezaul
authors.initials: MR
authors.lastname: Hasan
authors.affiliation: Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA; Department of Electrical and Computer Engineering, University of Maryland, College Park, MD 20742, USA.
authors.forename: Ting
authors.initials: T
authors.lastname: Xie
authors.affiliation: Materials Measurement Science Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.
authors.forename: Sara C
authors.initials: SC
authors.lastname: Barron
authors.affiliation: Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA; Department of Electrical and Computer Engineering, University of Maryland, College Park, MD 20742, USA.
authors.forename: Guannan
authors.initials: G
authors.lastname: Liu
authors.affiliation: Semiconductor and Dimensional Metrology Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.
authors.forename: Nhan V
authors.initials: NV
authors.lastname: Nguyen
authors.affiliation: Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742 USA.
authors.forename: Abhishek
authors.initials: A
authors.lastname: Motayed
authors.affiliation: Department of Electrical and Computer Engineering, George Mason University, 4400 University Drive, Fairfax, VA 22030, USA.
authors.forename: Mulpuri V
authors.initials: MV
authors.lastname: Rao
authors.affiliation: Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.
authors.forename: Ratan
authors.initials: R
authors.lastname: Debnath