title: ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell.
abstract: Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al2O3, ZrO2, Y2O3, and La2O3thin films are in between n-type ZnO:Al (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark current-density as low as 3×10-7A/cm2, a fill factor up to 71.3%, and open-circuit voltage as high as 527 mV are obtained, achieving conversion efficiency of 8% for the rare earth oxide La2O3. ZrO2and notably Al2O3show drawbacks in performance suggesting an adverse reactivity with AZO as also indicated by X-ray Photoelectron Spectroscopy.
authors.affiliation: Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, 1040 Vienna, Austria.
authors.forename: O
authors.initials: O
authors.lastname: Bethge
authors.affiliation: Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, 1040 Vienna, Austria.
authors.forename: M
authors.initials: M
authors.lastname: Nobile
authors.affiliation: Austrian Institute of Technology, Energy Department, Giefinggasse 2, 1210 Vienna, Austria.
authors.forename: S
authors.initials: S
authors.lastname: Abermann
authors.affiliation: Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, 1040 Vienna, Austria.
authors.forename: M
authors.initials: M
authors.lastname: Glaser
authors.affiliation: Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, 1040 Vienna, Austria.
authors.forename: E
authors.initials: E
authors.lastname: Bertagnolli
keywords: ALD; AZO; Metal oxides; SIS solar cell; Tunnel barrier; XPS