title: Interface Structure of MoO3 on Organic Semiconductors.
abstract: We have systematically studied interface structure formed by vapor-phase deposition of typical transition metal oxide MoO3 on organic semiconductors. Eight organic hole transport materials have been used in this study. Ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy are used to measure the evolution of the physical, chemical and electronic structure of the interfaces at various stages of MoO3 deposition on these organic semiconductor surfaces. For the interface physical structure, it is found that MoO3 diffuses into the underlying organic layer, exhibiting a trend of increasing diffusion with decreasing molecular molar mass. For the interface chemical structure, new carbon and molybdenum core-level states are observed, as a result of interfacial electron transfer from organic semiconductor to MoO3. For the interface electronic structure, energy level alignment is observed in agreement with the universal energy level alignment rule of molecules on metal oxides, despite deposition order inversion.
authors.affiliation: Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, ON, M5S 3E4, Canada.
authors.forename: Robin T
authors.initials: RT
authors.lastname: White
authors.affiliation: Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, ON, M5S 3E4, Canada.
authors.forename: Emmanuel S
authors.initials: ES
authors.lastname: Thibau
authors.affiliation: Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, ON, M5S 3E4, Canada.|Department of Physics, Yunnan University, Kunming, China.
authors.forename: Zheng-Hong
authors.initials: ZH
authors.lastname: Lu