title: Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography.
abstract: An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A significant light extraction efficiency (LEE) was improved by 116% in comparison to that of the planar LED. A uniform broad protrusion in the central area and some sharp lobes were also obtained in the angular resolution photoluminescence (ARPL) for the AAO patterned LED. The mechanism of the enhancement was correlated to the fluctuations of the lattice constant and domain orientation of the AAO-pattern, which enabled the extraction of more guided modes from the LED device.
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Shengxiang
authors.initials: S
authors.lastname: Jiang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Yulong
authors.initials: Y
authors.lastname: Feng
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Zhizhong
authors.initials: Z
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Lisheng
authors.initials: L
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Xianzhe
authors.initials: X
authors.lastname: Jiang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Qianqian
authors.initials: Q
authors.lastname: Jiao
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Junze
authors.initials: J
authors.lastname: Li
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Yifan
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Beijing North Microelectronics Co., Ltd., Beijing 100176, China.
authors.forename: Dongsan
authors.initials: D
authors.lastname: Li
authors.affiliation: Beijing North Microelectronics Co., Ltd., Beijing 100176, China.
authors.forename: Lijian
authors.initials: L
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Tongjun
authors.initials: T
authors.lastname: Yu
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Bo
authors.initials: B
authors.lastname: Shen
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.|Sino Nitride Semiconductor Co., Ltd., Dongguan 523500, Guangdong, China.
authors.forename: Guoyi
authors.initials: G
authors.lastname: Zhang