title: Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials.
abstract: We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination.
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Laboratoire de Nanotechnologie et d'Instrumentation Optique, Institut Charles Delaunay, CNRS-UMR 6281, Université de Technologie de Troyes , BP 2060, 10010 Troyes, France.
authors.forename: Hyun
authors.initials: H
authors.lastname: Jeong
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Hye Min
authors.initials: HM
authors.lastname: Oh
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Seungho
authors.initials: S
authors.lastname: Bang
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Hyeon Jun
authors.initials: HJ
authors.lastname: Jeong
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Sung-Jin
authors.initials: SJ
authors.lastname: An
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Gang Hee
authors.initials: GH
authors.lastname: Han
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Hyun
authors.initials: H
authors.lastname: Kim
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Seok Joon
authors.initials: SJ
authors.lastname: Yun
authors.affiliation: Department of Energy and Materials Engineering, Dongguk University , Seoul 100-715, Republic of Korea.
authors.forename: Ki Kang
authors.initials: KK
authors.lastname: Kim
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Jin Cheol
authors.initials: JC
authors.lastname: Park
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Young Hee
authors.initials: YH
authors.lastname: Lee
authors.affiliation: Laboratoire de Nanotechnologie et d'Instrumentation Optique, Institut Charles Delaunay, CNRS-UMR 6281, Université de Technologie de Troyes , BP 2060, 10010 Troyes, France.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Gilles
authors.initials: G
authors.lastname: Lerondel
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
authors.forename: Mun Seok
authors.initials: MS
authors.lastname: Jeong
keywords: Graphene; carrier tunneling; h-BN; metal−insulator−semiconductor diode; monolayer MoS2