title: Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide.
abstract: We realize a device with biological synaptic behaviors by integrating silicon oxide (SiO(x)) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms, and represent interesting potential applications for SiO(x)-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from (SiH)2 to generate the hydrogen bridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with large-scale CMOS manufacturing technology.
authors.affiliation: Microelectronics Research Center, the University of Texas at Austin, Austin TX 78758, USA.
authors.forename: Yao-Feng
authors.initials: YF
authors.lastname: Chang
authors.affiliation: Microelectronics Research Center, the University of Texas at Austin, Austin TX 78758, USA.
authors.forename: Burt
authors.initials: B
authors.lastname: Fowler
authors.affiliation: Microelectronics Research Center, the University of Texas at Austin, Austin TX 78758, USA.
authors.forename: Ying-Chen
authors.initials: YC
authors.lastname: Chen
authors.affiliation: Microelectronics Research Center, the University of Texas at Austin, Austin TX 78758, USA.
authors.forename: Fei
authors.initials: F
authors.lastname: Zhou
authors.affiliation: Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan.
authors.forename: Chih-Hung
authors.initials: CH
authors.lastname: Pan
authors.affiliation: Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan.
authors.forename: Ting-Chang
authors.initials: TC
authors.lastname: Chang
authors.affiliation: Microelectronics Research Center, the University of Texas at Austin, Austin TX 78758, USA.
authors.forename: Jack C
authors.initials: JC
authors.lastname: Lee