title: Stable electrical performance observed in large-scale monolayer WSe2(1-x)S2x with tunable band gap.
abstract: Two-dimensional (2D) semiconductor materials have attracted broad interest due to their unique structures and physical properties. The stability of the 2D-material-based devices plays a key role in their practical applications. Here, we report the promising stable electrical performance in the large-scale monolayer WSe2(1-x)S2x with a tunable band gap. Photoluminescence (PL) spectroscopy was utilized to verify the tunable band gap in the as-grown monolayer with a tuning capability of 120 meV. Gated field effect transistor (FET) performance confirmed the p-type transport behavior in monolayer WSe2(1-x)S2x with a high on/off ratio (>10(4)). Top-gated FET configuration improves the carrier mobility with two orders larger than that in the back-gated FET device. After exposure to air for three months, the device performance manifested excellent stability with no source-drain current drop observed. P-type WSe2(1-x)S2x with a tunable band gap is the ideal complement to n-type tunable monolayers in the application of pn junction-related flexible nanodevices.
authors.affiliation: Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Synergetic Innovation Center of Quantum Information Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
authors.forename: Jian
authors.initials: J
authors.lastname: Huang
authors.forename: Wenhui
authors.initials: W
authors.lastname: Wang
authors.forename: Qi
authors.initials: Q
authors.lastname: Fu
authors.forename: Lei
authors.initials: L
authors.lastname: Yang
authors.forename: Kun
authors.initials: K
authors.lastname: Zhang
authors.forename: Jingyu
authors.initials: J
authors.lastname: Zhang
authors.forename: Bin
authors.initials: B
authors.lastname: Xiang