title: Non-volatile memory devices with redox-active diruthenium molecular compound.
abstract: Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al2O3/molecule/SiO2/Si structure. The bulky ruthenium redox molecule is attached to the surface by using a 'click' reaction and the monolayer structure is characterized by x-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The 'click' reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices.
authors.affiliation: Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology (NIST), USA.
authors.forename: S
authors.initials: S
authors.lastname: Pookpanratana
authors.forename: H
authors.initials: H
authors.lastname: Zhu
authors.forename: E G
authors.initials: EG
authors.lastname: Bittle
authors.forename: S N
authors.initials: SN
authors.lastname: Natoli
authors.forename: T
authors.initials: T
authors.lastname: Ren
authors.forename: C A
authors.initials: CA
authors.lastname: Richter
authors.forename: Q
authors.initials: Q
authors.lastname: Li
authors.forename: C A
authors.initials: CA
authors.lastname: Hacker