title: Broadband Photovoltaic Detectors Based on an Atomically Thin Heterostructure.
abstract: van der Waals junctions of two-dimensional materials with an atomically sharp interface open up unprecedented opportunities to design and study functional heterostructures. Semiconducting transition metal dichalcogenides have shown tremendous potential for future applications due to their unique electronic properties and strong light-matter interaction. However, many important optoelectronic applications, such as broadband photodetection, are severely hindered by their limited spectral range and reduced light absorption. Here, we present a p-g-n heterostructure formed by sandwiching graphene with a gapless band structure and wide absorption spectrum in an atomically thin p-n junction to overcome these major limitations. We have successfully demonstrated a MoS2-graphene-WSe2 heterostructure for broadband photodetection in the visible to short-wavelength infrared range at room temperature that exhibits competitive device performance, including a specific detectivity of up to 10(11) Jones in the near-infrared region. Our results pave the way toward the implementation of atomically thin heterostructures for broadband and sensitive optoelectronic applications.
authors.forename: Mingsheng
authors.initials: M
authors.lastname: Long
authors.forename: Erfu
authors.initials: E
authors.lastname: Liu
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Wang
authors.forename: Anyuan
authors.initials: A
authors.lastname: Gao
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.
authors.forename: Hui
authors.initials: H
authors.lastname: Xia
authors.affiliation: College of Science, National University of Defense Technology , Changsha 410073, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Luo
authors.forename: Baigeng
authors.initials: B
authors.lastname: Wang
authors.forename: Junwen
authors.initials: J
authors.lastname: Zeng
authors.forename: Yajun
authors.initials: Y
authors.lastname: Fu
authors.forename: Kang
authors.initials: K
authors.lastname: Xu
authors.forename: Wei
authors.initials: W
authors.lastname: Zhou
authors.forename: Yangyang
authors.initials: Y
authors.lastname: Lv
authors.forename: Shuhua
authors.initials: S
authors.lastname: Yao
authors.forename: Minghui
authors.initials: M
authors.lastname: Lu
authors.forename: Yanfeng
authors.initials: Y
authors.lastname: Chen
authors.forename: Zhenhua
authors.initials: Z
authors.lastname: Ni
authors.forename: Yumeng
authors.initials: Y
authors.lastname: You
authors.affiliation: College of Science, National University of Defense Technology , Changsha 410073, China.
authors.forename: Xueao
authors.initials: X
authors.lastname: Zhang
authors.affiliation: College of Science, National University of Defense Technology , Changsha 410073, China.
authors.forename: Shiqiao
authors.initials: S
authors.lastname: Qin
authors.forename: Yi
authors.initials: Y
authors.lastname: Shi
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.
authors.forename: Weida
authors.initials: W
authors.lastname: Hu
authors.forename: Dingyu
authors.initials: D
authors.lastname: Xing
authors.forename: Feng
authors.initials: F
authors.lastname: Miao
keywords: 2D materials; graphene; heterostructure; photodetection; transition-metal dichalcogenides