title: Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication.
abstract: Post-growth in situ partial SiNx masking of GaN-based epitaxial layers grown in a molecular beam epitaxy reactor is used to get GaN selective area sublimation (SAS) by high temperature annealing. Using this top-down approach, nanowires (NWs) with nanometer scale diameter are obtained from GaN and InxGa1-xN/GaN quantum well epitaxial structures. After GaN regrowth on InxGa1-xN/GaN NWs resulting from SAS, InxGa1-xN quantum disks (QDisks) with nanometer sizes in the three dimensions are formed. Low temperature microphotoluminescence experiments demonstrate QDisk multilines photon emission around 3 eV with individual line widths of 1-2 meV.
authors.affiliation: Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique , Parc de Sophia Antipolis Rue B. Gregory, 06560 Valbonne, France.
authors.forename: B
authors.initials: B
authors.lastname: Damilano
authors.affiliation: Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique , Parc de Sophia Antipolis Rue B. Gregory, 06560 Valbonne, France.
authors.forename: S
authors.initials: S
authors.lastname: Vézian
authors.affiliation: Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique , Parc de Sophia Antipolis Rue B. Gregory, 06560 Valbonne, France.
authors.forename: J
authors.initials: J
authors.lastname: Brault
authors.affiliation: Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique , Parc de Sophia Antipolis Rue B. Gregory, 06560 Valbonne, France.
authors.forename: B
authors.initials: B
authors.lastname: Alloing
authors.affiliation: Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique , Parc de Sophia Antipolis Rue B. Gregory, 06560 Valbonne, France.
authors.forename: J
authors.initials: J
authors.lastname: Massies
keywords: GaN; Top-down fabrication; microphotoluminescence; nanowire; quantum-disk; thermal etching