title: Tailoring nonlinear optical properties of Bi2Se3 through ion irradiation.
abstract: The nonlinear optical property of topological insulator bismuth selenide (Bi2Se3) is found to be well-tailored through ion irradiation by intentionally introducing defects. The increase of the optical modulation depth sensitively depends on the careful selection of the irradiation condition. By implementing the ion irradiated Bi2Se3 film as an optical saturable absorber device for the Q-switched wave-guide laser, an enhanced laser performance has been obtained including narrower pulse duration and higher peak power. Our work provides a new approach of tailoring the nonlinear optical properties of materials through ion irradiation, a well-developed chip-technology, which could find wider applicability to other layered two-dimensional materials beyond topological insulators, such as graphene, MoS2, black phosphours etc.
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (Ministry of Education) Shandong University Shandong, Jinan, 250100, China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Tan
authors.affiliation: SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P.R. China.|Institute of Biomedicine and Biotechnology, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P.R. China.
authors.forename: Zhinan
authors.initials: Z
authors.lastname: Guo
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (Ministry of Education) Shandong University Shandong, Jinan, 250100, China.
authors.forename: Zhen
authors.initials: Z
authors.lastname: Shang
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.
authors.forename: Fang
authors.initials: F
authors.lastname: Liu
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.
authors.forename: Roman
authors.initials: R
authors.lastname: Böttger
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.
authors.forename: Shengqiang
authors.initials: S
authors.lastname: Zhou
authors.affiliation: SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P.R. China.|Institute of Biomedicine and Biotechnology, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P.R. China.
authors.forename: Jundong
authors.initials: J
authors.lastname: Shao
authors.affiliation: Institute of Biomedicine and Biotechnology, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P.R. China.
authors.forename: Xuefeng
authors.initials: X
authors.lastname: Yu
authors.affiliation: SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P.R. China.
authors.forename: Han
authors.initials: H
authors.lastname: Zhang
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (Ministry of Education) Shandong University Shandong, Jinan, 250100, China.
authors.forename: Feng
authors.initials: F
authors.lastname: Chen