title: Plasma functionalization for cyclic transition between neutral and charged excitons in monolayer MoS2.
abstract: Monolayer MoS2 (1L-MoS2) has photoluminescence (PL) properties that can greatly vary via transition between neutral and charged exciton PLs depending on carrier density. Here, for the first time, we present a chemical doping method for reversible transition between neutral and charged excitons of 1L-MoS2 using chlorine-hydrogen-based plasma functionalization. The PL of 1L-MoS2 is drastically increased by p-type chlorine plasma doping in which its intensity is easily tuned by controlling the plasma treatment duration. We find that despite their strong adhesion, a post hydrogen plasma treatment can very effectively dedope chlorine adatoms in a controllable way while maintaining robust structural integrity, which enables well-defined reversible PL control of 1L-MoS2. After exhaustive chlorine dedoping, the hydrogen plasma process induces n-type doping of 1L-MoS2, degrading the PL further, which can also be recovered by subsequent chlorine plasma treatment, extending the range of tunable PL into a bidirectional regime. This cyclically-tunable carrier doping method can be usefully employed in fabricating highly-tunable n- and p-type domains in monolayer transition-metal dichalcogenides suitable for two-dimensional electro-optic modulators, on-chip lasers, and spin- and valley-polarized light-emitting diodes.
authors.affiliation: Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
authors.forename: Y
authors.initials: Y
authors.lastname: Kim
authors.affiliation: Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
authors.forename: Y I
authors.initials: YI
authors.lastname: Jhon
authors.affiliation: Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
authors.forename: J
authors.initials: J
authors.lastname: Park
authors.affiliation: Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
authors.forename: C
authors.initials: C
authors.lastname: Kim
authors.affiliation: Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
authors.forename: S
authors.initials: S
authors.lastname: Lee
authors.affiliation: Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
authors.forename: Y M
authors.initials: YM
authors.lastname: Jhon