title: Engineering the electronic and magnetic properties of d(0) 2D dichalcogenide materials through vacancy doping and lattice strains.
abstract: We have systematically investigated the effects of different vacancy defects in 2D d(0) materials SnS2 and ZrS2 using first principles calculations. The theoretical results show that the single cation vacancy and the vacancy complex like V-SnS6 can induce large magnetic moments (3-4 μB) in these single layer materials. Other defects, such as V-SnS3, V-S, V-ZrS3 and V-ZrS6, can result in n-type conductivity. In addition, the ab initio studies also reveal that the magnetic and conductive properties from the cation vacancy and the defect complex V-SnS6 can be modified using the compressive/tensile strain of the in-plane lattices. Specifically, the V-Zr doped ZrS2 monolayer can be tuned from a ferromagnetic semiconductor to a metallic/half-metallic material with decreasing/increasing magnetic moments depending on the external compressive/tensile strains. On the other hand, the semiconducting and magnetic properties of V-Sn doped SnS2 is preserved under different lattice compression and tension. For the defect complex like V-SnS6, only the lattice compression can tune the magnetic moments in SnS2. As a result, by manipulating the fabrication parameters, the magnetic and conductive properties of SnS2 and ZrS2 can be tuned without the need for chemical doping.
authors.affiliation: School of Material Science and Engineering, University of New South Wales, Sydney 2052, Australia and School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China. anh.pham@unsw.edu.au.
authors.forename: L
authors.initials: L
authors.lastname: Ao
authors.affiliation: School of Material Science and Engineering, University of New South Wales, Sydney 2052, Australia.
authors.forename: A
authors.initials: A
authors.lastname: Pham
authors.affiliation: School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China. anh.pham@unsw.edu.au.
authors.forename: H Y
authors.initials: HY
authors.lastname: Xiao
authors.affiliation: School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China. anh.pham@unsw.edu.au.
authors.forename: X T
authors.initials: XT
authors.lastname: Zu
authors.affiliation: School of Material Science and Engineering, University of New South Wales, Sydney 2052, Australia.
authors.forename: S
authors.initials: S
authors.lastname: Li