title: Cuprous halides semiconductors as a new means for highly efficient light-emitting diodes.
abstract: In group-III nitrides in use for white light-emitting diodes (LEDs), optical gain, measure of luminous efficiency, is very low owing to the built-in electrostatic fields, low exciton binding energy, and high-density misfit dislocations due to lattice-mismatched substrates. Cuprous halides I-VII semiconductors, on the other hand, have negligible built-in field, large exciton binding energies and close lattice matched to silicon substrates. Recent experimental studies have shown that the luminescence of I-VII CuCl grown on Si is three orders larger than that of GaN at room temperature. Here we report yet unexplored potential of cuprous halides systems by investigating the optical gain of CuCl/CuI quantum wells. It is found that the optical gain and the luminescence are much larger than that of group III-nitrides due to large exciton binding energy and vanishing electrostatic fields. We expect that these findings will open up the way toward highly efficient cuprous halides based LEDs compatible to Si technology.
authors.affiliation: Department of Electrical and Computer Engineering and Center for Quantum Information Processing, University of Seoul, Seoul 130-743, Republic of Korea.|Peta Lux Inc., 3F, TLi Building, 12 Yanghyeon-ro, 405 beon-gil, Jungwon-gu, Seongnam-si, Gyeonggi-do 462-100, Republic of Korea.
authors.forename: Doyeol
authors.initials: D
authors.lastname: Ahn
authors.affiliation: Electronics Department, Catholic University of Daegu, Hayang, Kyeongbuk 712-702, Republic of Korea.
authors.forename: Seoung-Hwan
authors.initials: SH
authors.lastname: Park