title: Phase-driven magneto-electrical characteristics of single-layer MoS2.
abstract: Magnetism of the MoS2 semiconducting atomic layer was highlighted for its great potential in the applications of spintronics and valleytronics. In this study, we demonstrate an evolution of magneto-electrical properties of single layer MoS2 with the modulation of defect configurations and formation of a partial 1T phase. With Ar treatment, sulfur was depleted within the MoS2 flake leading to a 2H (low-spin) → partial 1T (high-spin) phase transition. The phase transition was accompanied by the development of a ferromagnetic phase. Alternatively, the phase transition could be driven by the desorption of S atoms at the edge of MoS2via O2 treatment while with a different ordering magnitude in magnetism. The edge-sensitive magnetism of the single-layer MoS2 was monitored by magnetic force microscopy and validated by a first-principle calculation with graded-Vs (sulfur vacancy) terminals set at the edge, where band-splitting appeared more prominent with increasing Vs. Treatment with Ar and O2 enabled a dual electrical characteristic of the field effect transistor (FET) that featured linear and saturated responses of different magnitudes in the Ids-Vds curves, whereas the pristine MoS2 FET displayed only a linear electrical dependency. The correlation and tuning of the Vs-1T phase transition would provide a playground for tailoring the phase-driven properties of MoS2 semiconducting atomic layers in spintronic applications.
authors.affiliation: Materials Science & Engineering, National Chiao-Tung University, Hsin-Chu, Taiwan. yctseng21@mail.nctu.edu.tw.
authors.forename: Chao-Yao
authors.initials: CY
authors.lastname: Yang
authors.affiliation: Materials Science & Engineering, National Tsing Hua University, Hsin-Chu, Taiwan.
authors.forename: Kuan-Chang
authors.initials: KC
authors.lastname: Chiu
authors.affiliation: Materials Science & Engineering, National Chiao-Tung University, Hsin-Chu, Taiwan. yctseng21@mail.nctu.edu.tw.
authors.forename: Shu-Jui
authors.initials: SJ
authors.lastname: Chang
authors.affiliation: Materials Science & Engineering, National Tsing Hua University, Hsin-Chu, Taiwan.
authors.forename: Xin-Quan
authors.initials: XQ
authors.lastname: Zhang
authors.affiliation: Materials Science & Engineering, National Chiao-Tung University, Hsin-Chu, Taiwan. yctseng21@mail.nctu.edu.tw.
authors.forename: Jaw-Yeu
authors.initials: JY
authors.lastname: Liang
authors.affiliation: Materials Science & Engineering, National Chiao-Tung University, Hsin-Chu, Taiwan. yctseng21@mail.nctu.edu.tw.
authors.forename: Chi-Sheng
authors.initials: CS
authors.lastname: Chung
authors.affiliation: Institute of Applied Physics and Materials Engineering, University of Macau, Macau, China.
authors.forename: Hui
authors.initials: H
authors.lastname: Pan
authors.affiliation: Materials Science & Engineering, National Tsing Hua University, Hsin-Chu, Taiwan.
authors.forename: Jenn-Ming
authors.initials: JM
authors.lastname: Wu
authors.affiliation: Materials Science & Engineering, National Chiao-Tung University, Hsin-Chu, Taiwan. yctseng21@mail.nctu.edu.tw.
authors.forename: Yuan-Chieh
authors.initials: YC
authors.lastname: Tseng
authors.affiliation: Materials Science & Engineering, National Tsing Hua University, Hsin-Chu, Taiwan.
authors.forename: Yi-Hsien
authors.initials: YH
authors.lastname: Lee