title: Low-temperature growth of layered molybdenum disulphide with controlled clusters.
abstract: Layered molybdenum disulphide was grown at a low-temperature of 350 °C using chemical vapour deposition by elaborately controlling the cluster size. The molybdenum disulphide grown under various sulphur-reaction-gas to molybdenum-precursor partial-pressure ratios were examined. Using spectroscopy and microscopy, the effect of the cluster size on the layered growth was investigated in terms of the morphology, grain size, and impurity incorporation. Triangular single-crystal domains were grown at an optimized sulphur-reaction-gas to molybdenum-precursor partial-pressure ratio. Furthermore, it is proved that the nucleation sites on the silicon-dioxide substrate were related with the grain size. A polycrystalline monolayer with the 100-nm grain size was grown on a nucleation site confined substrate by high-vacuum annealing. In addition, a field-effect transistor was fabricated with a MoS2 monolayer and exhibited a mobility and on/off ratio of 0.15 cm(2) V(-1) s(-1) and 10(5), respectively.
authors.affiliation: School of Mechanical Engineering, Sungkyunkwan University, Suwon, Gyeonggi, 440-746, Korea.|Center for Vacuum Technology, Korea Research Institute of Standards and Science, Daejeon 305-340, Korea.
authors.forename: Jihun
authors.initials: J
authors.lastname: Mun
authors.affiliation: School of Mechanical Engineering, Sungkyunkwan University, Suwon, Gyeonggi, 440-746, Korea.|Center for Vacuum Technology, Korea Research Institute of Standards and Science, Daejeon 305-340, Korea.
authors.forename: Yeongseok
authors.initials: Y
authors.lastname: Kim
authors.affiliation: National Nanofab Center, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea.
authors.forename: Il-Suk
authors.initials: IS
authors.lastname: Kang
authors.affiliation: National Nanofab Center, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea.
authors.forename: Sung Kyu
authors.initials: SK
authors.lastname: Lim
authors.affiliation: Materials Genome Center, Korea Research Institute of Standards and Science, Daejeon 305-340, Korea.
authors.forename: Sang Jun
authors.initials: SJ
authors.lastname: Lee
authors.affiliation: Materials Genome Center, Korea Research Institute of Standards and Science, Daejeon 305-340, Korea.
authors.forename: Jeong Won
authors.initials: JW
authors.lastname: Kim
authors.affiliation: Materials Genome Center, Korea Research Institute of Standards and Science, Daejeon 305-340, Korea.
authors.forename: Hyun Min
authors.initials: HM
authors.lastname: Park
authors.affiliation: School of Mechanical Engineering, Sungkyunkwan University, Suwon, Gyeonggi, 440-746, Korea.|SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, Gyeonggi, 440-746, Korea.
authors.forename: Taesung
authors.initials: T
authors.lastname: Kim
authors.affiliation: Center for Vacuum Technology, Korea Research Institute of Standards and Science, Daejeon 305-340, Korea.|Department of Advanced Device Technology, University of Science and Technology, Daejeon 305-350, Korea.
authors.forename: Sang-Woo
authors.initials: SW
authors.lastname: Kang