title: Graphene growth on Ge(100)/Si(100) substrates by CVD method.
abstract: The successful integration of graphene into microelectronic devices is strongly dependent on the availability of direct deposition processes, which can provide uniform, large area and high quality graphene on nonmetallic substrates. As of today the dominant technology is based on Si and obtaining graphene with Si is treated as the most advantageous solution. However, the formation of carbide during the growth process makes manufacturing graphene on Si wafers extremely challenging. To overcome these difficulties and reach the set goals, we proposed growth of high quality graphene layers by the CVD method on Ge(100)/Si(100) wafers. In addition, a stochastic model was applied in order to describe the graphene growth process on the Ge(100)/Si(100) substrate and to determine the direction of further processes. As a result, high quality graphene was grown, which was proved by Raman spectroscopy results, showing uniform monolayer films with FWHM of the 2D band of 32 cm(-1).
authors.affiliation: Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland.
authors.forename: Iwona
authors.initials: I
authors.lastname: Pasternak
authors.affiliation: Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland.
authors.forename: Marek
authors.initials: M
authors.lastname: Wesolowski
authors.affiliation: Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland.
authors.forename: Iwona
authors.initials: I
authors.lastname: Jozwik
authors.affiliation: IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
authors.forename: Mindaugas
authors.initials: M
authors.lastname: Lukosius
authors.affiliation: IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
authors.forename: Grzegorz
authors.initials: G
authors.lastname: Lupina
authors.affiliation: Department of Solid States Physics, University of Lodz, Pomorska 149/153, Lodz, 90-236, Poland.
authors.forename: Pawel
authors.initials: P
authors.lastname: Dabrowski
authors.affiliation: Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland.
authors.forename: Jacek M
authors.initials: JM
authors.lastname: Baranowski
authors.affiliation: Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland.
authors.forename: Wlodek
authors.initials: W
authors.lastname: Strupinski