title: NO2-induced performance enhancement of PEDOT:PSS/Si hybrid solar cells with a high efficiency of 13.44.
abstract: Using poly (3,4-ethylene-dioxythiophene): poly(styrenesulfonate) (
  PSS) as an effective hole collecting layer, high-efficiency
  PSS/n-Si hybrid solar cells are fabricated and a power conversion efficiency (PCE) of 12.13% is obtained. After being treated by HNO3 vapor, the PCE value of
  PSS/n-Si hybrid solar cells enhances from 12.13% to 13.44%. NO2 gas molecules in HNO3 vapor play a significant doping role in raising the PCE of solar cells. As the doping level raises, NO2 would get more electrons from PEDOT and lead to the increase of hole carriers in the films, which improves the polymer film's conductivity and PCE of solar cells.
authors.affiliation: Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, People's Republic of China. xiedan@mail.tsinghua.edu.cn.
authors.forename: Pu
authors.initials: P
authors.lastname: Yang
authors.affiliation: Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, People's Republic of China. xiedan@mail.tsinghua.edu.cn.
authors.forename: Dan
authors.initials: D
authors.lastname: Xie
authors.affiliation: Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, People's Republic of China. xiedan@mail.tsinghua.edu.cn.
authors.forename: Yuanfan
authors.initials: Y
authors.lastname: Zhao
authors.affiliation: Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, People's Republic of China. xiedan@mail.tsinghua.edu.cn.
authors.forename: Jianlong
authors.initials: J
authors.lastname: Xu
authors.affiliation: National Center for Nanoscience and Technology, Zhongguancun, Beijing 100190, China.
authors.forename: Xinming
authors.initials: X
authors.lastname: Li
authors.affiliation: Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, People's Republic of China. xiedan@mail.tsinghua.edu.cn.
authors.forename: Changjiu
authors.initials: C
authors.lastname: Teng
authors.affiliation: Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, People's Republic of China. xiedan@mail.tsinghua.edu.cn.
authors.forename: Yilin
authors.initials: Y
authors.lastname: Sun
authors.affiliation: Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, People's Republic of China. xiedan@mail.tsinghua.edu.cn.
authors.forename: Xian
authors.initials: X
authors.lastname: Li
authors.affiliation: School of Materials Science and Engineering, State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Materials Processing Technology of MOE, Tsinghua University, Beijing 100084, China. hongweizhu@mail.tsinghua.edu.cn and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, China. hongweizhu@mail.tsinghua.edu.cn.
authors.forename: Hongwei
authors.initials: H
authors.lastname: Zhu