title: Deep-UV nitride-on-silicon microdisk lasers.
abstract: Deep ultra-violet semiconductor lasers have numerous applications for optical storage and biochemistry. Many strategies based on nitride heterostructures and adapted substrates have been investigated to develop efficient active layers in this spectral range, starting with AlGaN quantum wells on AlN substrates and more recently sapphire and SiC substrates. Here we report an efficient and simple solution relying on binary GaN/AlN quantum wells grown on a thin AlN buffer layer on a silicon substrate. This active region is embedded in microdisk photonic resonators of high quality factors and allows the demonstration of a deep ultra-violet microlaser operating at 275 nm at room temperature under optical pumping, with a spontaneous emission coupling factor β = (4 ± 2) 10(-4). The ability of the active layer to be released from the silicon substrate and to be grown on silicon-on-insulator substrates opens the way to future developments of nitride nanophotonic platforms on silicon.
authors.affiliation: Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier, F-34095 Montpellier, France.
authors.forename: J
authors.initials: J
authors.lastname: Sellés
authors.affiliation: Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier, F-34095 Montpellier, France.
authors.forename: C
authors.initials: C
authors.lastname: Brimont
authors.affiliation: Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier, F-34095 Montpellier, France.
authors.forename: G
authors.initials: G
authors.lastname: Cassabois
authors.affiliation: Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier, F-34095 Montpellier, France.
authors.forename: P
authors.initials: P
authors.lastname: Valvin
authors.affiliation: Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier, F-34095 Montpellier, France.
authors.forename: T
authors.initials: T
authors.lastname: Guillet
authors.affiliation: Institut d'Electronique Fondamentale, CNRS, Univ Paris-Sud, Université Paris-Saclay, Bâtiment 220, Rue André Ampère, F-91405 Orsay, France.
authors.forename: I
authors.initials: I
authors.lastname: Roland
authors.affiliation: Institut d'Electronique Fondamentale, CNRS, Univ Paris-Sud, Université Paris-Saclay, Bâtiment 220, Rue André Ampère, F-91405 Orsay, France.
authors.forename: Y
authors.initials: Y
authors.lastname: Zeng
authors.affiliation: Institut d'Electronique Fondamentale, CNRS, Univ Paris-Sud, Université Paris-Saclay, Bâtiment 220, Rue André Ampère, F-91405 Orsay, France.
authors.forename: X
authors.initials: X
authors.lastname: Checoury
authors.affiliation: Institut d'Electronique Fondamentale, CNRS, Univ Paris-Sud, Université Paris-Saclay, Bâtiment 220, Rue André Ampère, F-91405 Orsay, France.
authors.forename: P
authors.initials: P
authors.lastname: Boucaud
authors.affiliation: Centre de Recherche pour l'Hétéro-Epitaxie et ses Applications (CRHEA)-CNRS, Rue Bernard Gregory, F- 06560, Valbonne, France.
authors.forename: M
authors.initials: M
authors.lastname: Mexis
authors.affiliation: Centre de Recherche pour l'Hétéro-Epitaxie et ses Applications (CRHEA)-CNRS, Rue Bernard Gregory, F- 06560, Valbonne, France.
authors.forename: F
authors.initials: F
authors.lastname: Semond
authors.affiliation: Université Grenoble Alpes, F-38000 Grenoble, France.|CEA, INAC-PHELIQS, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France.
authors.forename: B
authors.initials: B
authors.lastname: Gayral