title: Arbitrary cross-section SEM-cathodoluminescence imaging of growth sectors and local carrier concentrations within micro-sampled semiconductor nanorods.
abstract: Future one-dimensional electronics require single-crystalline semiconductor free-standing nanorods grown with uniform electrical properties. However, this is currently unrealistic as each crystallographic plane of a nanorod grows at unique incorporation rates of environmental dopants, which forms axial and lateral growth sectors with different carrier concentrations. Here we propose a series of techniques that micro-sample a free-standing nanorod of interest, fabricate its arbitrary cross-sections by controlling focused ion beam incidence orientation, and visualize its internal carrier concentration map. ZnO nanorods are grown by selective area homoepitaxy in precursor aqueous solution, each of which has a (0001):+c top-plane and six {1-100}:m side-planes. Near-band-edge cathodoluminescence nanospectroscopy evaluates carrier concentration map within a nanorod at high spatial resolution (60 nm) and high sensitivity. It also visualizes +c and m growth sectors at arbitrary nanorod cross-section and history of local transient growth events within each growth sector. Our technique paves the way for well-defined bottom-up nanoelectronics.
authors.affiliation: International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Ibaraki 305-0044, Japan.|Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Osaka 560-8531, Japan.
authors.forename: Kentaro
authors.identifier: http://orcid.org/0000-0002-9104-7458
authors.initials: K
authors.lastname: Watanabe
authors.affiliation: International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Ibaraki 305-0044, Japan.
authors.forename: Takahiro
authors.initials: T
authors.lastname: Nagata
authors.affiliation: International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Ibaraki 305-0044, Japan.
authors.forename: Seungjun
authors.initials: S
authors.lastname: Oh
authors.affiliation: International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Ibaraki 305-0044, Japan.
authors.forename: Yutaka
authors.initials: Y
authors.lastname: Wakayama
authors.affiliation: International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Ibaraki 305-0044, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Sekiguchi
authors.affiliation: MTA EK Institute of Technical Physics and Materials Science, Konkoly Thege M. ut 29-33, Budapest 1121, Hungary.
authors.forename: János
authors.initials: J
authors.lastname: Volk
authors.affiliation: Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Osaka 560-8531, Japan.
authors.forename: Yoshiaki
authors.initials: Y
authors.lastname: Nakamura