title: Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory.
abstract: Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics.
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.
authors.forename: Changhyun
authors.initials: C
authors.lastname: Ko
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.
authors.forename: Yeonbae
authors.initials: Y
authors.lastname: Lee
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.
authors.forename: Yabin
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.
authors.forename: Joonki
authors.initials: J
authors.lastname: Suh
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.
authors.forename: Deyi
authors.initials: D
authors.lastname: Fu
authors.affiliation: School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
authors.forename: Aslihan
authors.initials: A
authors.lastname: Suslu
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.
authors.forename: Sangwook
authors.initials: S
authors.lastname: Lee
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.
authors.forename: James David
authors.initials: JD
authors.lastname: Clarkson
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.
authors.forename: Hwan Sung
authors.initials: HS
authors.lastname: Choe
authors.affiliation: School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
authors.forename: Sefaatin
authors.initials: S
authors.lastname: Tongay
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.|Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA.|Materials Sciences DivisionLawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Ramamoorthy
authors.initials: R
authors.lastname: Ramesh
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.|Materials Sciences DivisionLawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Junqiao
authors.initials: J
authors.lastname: Wu
keywords: 2D materials; ferroelectrics; field-effect transistors; nonvolatile memory; transition-metal dichalcogenides