title: Pressure-induced phase transition in Bi2Se3 at 3 GPa: electronic topological transition or not?
abstract: In recent years, a low pressure transition around P3 GPa exhibited by the A2B3-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory or experiments. We address this phase transition and other transitions at higher pressure in bismuth selenide (Bi2Se3) using Raman spectroscopy at pressure up to 26.2 GPa. We see clear Raman signatures of an isostructural phase transition at P2.4 GPa followed by structural transitions at ∼ 10 GPa and 16 GPa. First-principles calculations reveal anomalously sharp changes in the structural parameters like the internal angle of the rhombohedral unit cell with a minimum in the c/a ratio near P3 GPa. While our calculations reveal the associated anomalies in vibrational frequencies and electronic bandgap, the calculated Z2 invariant and Dirac conical surface electronic structure remain unchanged, showing that there is no change in the electronic topology at the lowest pressure transition.
authors.affiliation: Department of Physics, Indian Institute of Science, Bangalore 560 012, India.
authors.forename: Achintya
authors.initials: A
authors.lastname: Bera
authors.forename: Koushik
authors.initials: K
authors.lastname: Pal
authors.forename: D V S
authors.initials: DV
authors.lastname: Muthu
authors.forename: U V
authors.initials: UV
authors.lastname: Waghmare
authors.forename: A K
authors.initials: AK
authors.lastname: Sood