title: Crystal Phase Transformation in Self-Assembled InAs Nanowire Junctions on Patterned Si Substrates.
abstract: We demonstrate the growth and structural characteristics of InAs nanowire junctions evidencing a transformation of the crystalline structure. The junctions are obtained without the use of catalyst particles. Morphological investigations of the junctions reveal three structures having an L-, T-, and X-shape. The formation mechanisms of these structures have been identified. The NW junctions reveal large sections of zinc blende crystal structure free of extended defects, despite the high stacking fault density obtained in individual InAs nanowires. This segment of zinc blende crystal structure in the junction is associated with a crystal phase transformation involving sets of Shockley partial dislocations; the transformation takes place solely in the crystal phase. A model is developed to demonstrate that only the zinc blende phase with the same orientation as the substrate can result in monocrystalline junctions. The suitability of the junctions to be used in nanoelectronic devices is confirmed by room-temperature electrical experiments.
authors.affiliation: Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH , 52425 Jülich, Germany.|Jülich Aachen Research Alliance for Fundamentals of Future Information Technology (JARA-FIT) , 52425 Jülich, Germany.
authors.forename: Torsten
authors.initials: T
authors.lastname: Rieger
authors.affiliation: Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH , 52425 Jülich, Germany.|Jülich Aachen Research Alliance for Fundamentals of Future Information Technology (JARA-FIT) , 52425 Jülich, Germany.
authors.forename: Daniel
authors.initials: D
authors.lastname: Rosenbach
authors.affiliation: Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH , 52425 Jülich, Germany.|Jülich Aachen Research Alliance for Fundamentals of Future Information Technology (JARA-FIT) , 52425 Jülich, Germany.
authors.forename: Daniil
authors.initials: D
authors.lastname: Vakulov
authors.affiliation: Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH , 52425 Jülich, Germany.|Jülich Aachen Research Alliance for Fundamentals of Future Information Technology (JARA-FIT) , 52425 Jülich, Germany.
authors.forename: Sebastian
authors.initials: S
authors.lastname: Heedt
authors.affiliation: Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH , 52425 Jülich, Germany.|Jülich Aachen Research Alliance for Fundamentals of Future Information Technology (JARA-FIT) , 52425 Jülich, Germany.
authors.forename: Thomas
authors.initials: T
authors.lastname: Schäpers
authors.affiliation: Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH , 52425 Jülich, Germany.|Jülich Aachen Research Alliance for Fundamentals of Future Information Technology (JARA-FIT) , 52425 Jülich, Germany.
authors.forename: Detlev
authors.initials: D
authors.lastname: Grützmacher
authors.affiliation: Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbH , 52425 Jülich, Germany.|Jülich Aachen Research Alliance for Fundamentals of Future Information Technology (JARA-FIT) , 52425 Jülich, Germany.
authors.forename: Mihail Ion
authors.initials: MI
authors.lastname: Lepsa
keywords: InAs nanowire; MBE; Nanowire junctions; Shockley partial dislocation; crystal phase transformation; room-temperature transport