title: Domain configurations in Co/Pd and L10-FePt nanowire arrays with perpendicular magnetic anisotropy.
abstract: Perpendicular magnetic anisotropy [Co/Pd]15 and L10-FePt nanowire arrays of period 63 nm with linewidths 38 nm and 27 nm and film thickness 27 nm and 20 nm respectively were fabricated using a self-assembled PS-b-PDMS diblock copolymer film as a lithographic mask. The wires are predicted to support Néel walls in the Co/Pd and Bloch walls in the FePt. Magnetostatic interactions from nearest neighbor nanowires promote a ground state configuration consisting of alternating up and down magnetization in adjacent wires. This was observed over ∼75% of the Co/Pd wires after ac-demagnetization but was less prevalent in the FePt because the ratio of interaction field to switching field was much smaller. Interactions also led to correlations in the domain wall positions in adjacent Co/Pd nanowires. The reversal process was characterized by nucleation of reverse domains, followed at higher fields by propagation of the domains along the nanowires. These narrow wires provide model system for exploring domain wall structure and dynamics in perpendicular anisotropy systems.
authors.affiliation: Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA02139, USA. hopin@alumni.nus.edu.sg caross@mit.edu.
authors.forename: Pin
authors.initials: P
authors.lastname: Ho
authors.affiliation: Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA02139, USA. hopin@alumni.nus.edu.sg caross@mit.edu.
authors.forename: Kun-Hua
authors.initials: KH
authors.lastname: Tu
authors.affiliation: Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA02139, USA. hopin@alumni.nus.edu.sg caross@mit.edu.
authors.forename: Jinshuo
authors.initials: J
authors.lastname: Zhang
authors.affiliation: Department of Materials Science and Engineering, University of Wisconsin, Madison, WI53706, USA.
authors.forename: Congli
authors.initials: C
authors.lastname: Sun
authors.affiliation: Department of Materials Science and Engineering, National University of Singapore, Singapore 119077, Singapore.
authors.forename: Jingsheng
authors.initials: J
authors.lastname: Chen
authors.affiliation: Department of Materials Science and Engineering, University of Ioannina, University Campus - Dourouti, Ioannina 45110, Greece.
authors.forename: George
authors.initials: G
authors.lastname: Liontos
authors.affiliation: Department of Materials Science and Engineering, University of Ioannina, University Campus - Dourouti, Ioannina 45110, Greece.
authors.forename: Konstantinos
authors.initials: K
authors.lastname: Ntetsikas
authors.affiliation: Department of Materials Science and Engineering, University of Ioannina, University Campus - Dourouti, Ioannina 45110, Greece.
authors.forename: Apostolos
authors.initials: A
authors.lastname: Avgeropoulos
authors.affiliation: Department of Materials Science and Engineering, University of Wisconsin, Madison, WI53706, USA.
authors.forename: Paul M
authors.initials: PM
authors.lastname: Voyles
authors.affiliation: Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA02139, USA. hopin@alumni.nus.edu.sg caross@mit.edu.
authors.forename: Caroline A
authors.initials: CA
authors.lastname: Ross