title: Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source.
abstract: The installation of the 28 GHz electron cyclotron resonance ion source (ECRIS) ion implantation beamline was recently completed at the Korea Basic Science Institute. The apparatus contains a beam monitoring system and a sample holder for the ion implantation process. The new implantation system can function as a multipurpose tool since it can implant a variety of ions, ranging hydrogen to uranium, into different materials with precise control and with implantation areas as large as 1-10 mm(2). The implantation chamber was designed to measure the beam properties with a diagnostic system as well as to perform ion implantation with an in situ system including a mass spectrometer. This advanced implantation system can be employed in novel applications, including the production of a variety of new materials such as metals, polymers, and ceramics and the irradiation testing and fabrication of structural and functional materials to be used in future nuclear fusion reactors. In this investigation, the first nitrogen ion implantation experiments were conducted using the new system. The 28 GHz ECRIS implanted low-energy, multi-charged nitrogen ions into copper, zinc, and cobalt substrates, and the ion implantation depth profiles were obtained. SRIM 2013 code was used to calculate the profiles under identical conditions, and the experimental and simulation results are presented and compared in this report. The depths and ranges of the ion distributions in the experimental and simulation results agree closely and demonstrate that the new system will enable the treatment of various substrates for advanced materials research.
authors.affiliation: Busan Center, Korea Basic Science Institute, Busan 609-735, South Korea.
authors.forename: Chang Seouk
authors.initials: CS
authors.lastname: Shin
authors.affiliation: Busan Center, Korea Basic Science Institute, Busan 609-735, South Korea.
authors.forename: Byoung-Seob
authors.initials: BS
authors.lastname: Lee
authors.affiliation: Busan Center, Korea Basic Science Institute, Busan 609-735, South Korea.
authors.forename: Seyong
authors.initials: S
authors.lastname: Choi
authors.affiliation: Busan Center, Korea Basic Science Institute, Busan 609-735, South Korea.
authors.forename: Jang-Hee
authors.initials: JH
authors.lastname: Yoon
authors.affiliation: Busan Center, Korea Basic Science Institute, Busan 609-735, South Korea.
authors.forename: Hyun Gyu
authors.initials: HG
authors.lastname: Kim
authors.affiliation: Busan Center, Korea Basic Science Institute, Busan 609-735, South Korea.
authors.forename: Jung-Woo
authors.initials: JW
authors.lastname: Ok
authors.affiliation: Busan Center, Korea Basic Science Institute, Busan 609-735, South Korea.
authors.forename: Jin Yong
authors.initials: JY
authors.lastname: Park
authors.affiliation: Busan Center, Korea Basic Science Institute, Busan 609-735, South Korea.
authors.forename: Seong Jun
authors.initials: SJ
authors.lastname: Kim
authors.affiliation: Busan Center, Korea Basic Science Institute, Busan 609-735, South Korea.
authors.forename: Jungbae
authors.initials: J
authors.lastname: Bahng
authors.affiliation: Busan Center, Korea Basic Science Institute, Busan 609-735, South Korea.
authors.forename: Jonggi
authors.initials: J
authors.lastname: Hong
authors.affiliation: School of Mechanical Engineering, Pusan National University, Pusan 609-735, South Korea.
authors.forename: Seung Wook
authors.initials: SW
authors.lastname: Lee
authors.affiliation: Busan Center, Korea Basic Science Institute, Busan 609-735, South Korea.
authors.forename: Mi-Sook
authors.initials: MS
authors.lastname: Won