title: High-efficiency near-infrared emission from Bismuth-doped SiO0.73 thin films fabricated by ion implantation technology.
abstract: Over the past decade, the possibility of near-infrared light generation and amplification on chip has attracted great interest for future monolithic integrated optical components. In this Letter, we demonstrated a CMOS-compatible method to fabricate amorphous SiO0.73 thin films doped with Bi ions. It exhibited highly improved σ(em)×τ of up to 4.2×10(-23) cm2 s and greatly enhanced near-infrared characteristic emission originated from Bi ions by nearly 60 times via Si nanocrystal size control. We anticipated that this Bi-doped near-infrared light emitter would be a new starting point for future research in the field of optoelectronic integration.
authors.forename: Shaobing
authors.initials: S
authors.lastname: Lin
authors.forename: Xiaowei
authors.initials: X
authors.lastname: Zhang
authors.forename: Pei
authors.initials: P
authors.lastname: Zhang
authors.forename: Dameng
authors.initials: D
authors.lastname: Tan
authors.forename: Jun
authors.initials: J
authors.lastname: Xu
authors.forename: Wei
authors.initials: W
authors.lastname: Li
authors.forename: Kunji
authors.initials: K
authors.lastname: Chen