title: Effect of Ag/Au bilayer assisted etching on the strongly enhanced photoluminescence and visible light photocatalysis by Si nanowire arrays.
abstract: We report on the strongly enhanced photoluminescence (PL) and visible light photocatalysis by arrays of vertically aligned single crystalline Si nanowires (NWs) grown by Ag/Au bilayer assisted etching. High resolution FESEM and TEM imaging reveals that the Si NWs are decorated with ultra-small size arbitrary shaped Si nanocrystals (NCs) due to the lateral etching of the NWs. A strong broad band and tunable visible to near-infrared (NIR) photoluminescence (PL) in the range 1.3-2.4 eV are observed for these Si NWs/NCs at room temperature, depending on the etching conditions. Our studies reveal that the visible-NIR PL intensity is about two orders of magnitude higher and it exhibits faster decay dynamics in the bilayer assisted etching case as compared to the Ag or Au single layer etching case. The enhanced PL in the bimetal case is attributed to the longer length and higher density of the Si NWs/NCs, surface plasmon resonance enhanced absorption by residual bimetal NPs and the enhanced radiative recombination rate. Studies on the time evolution of PL spectral features with laser exposure under ambient conditions and laser power dependence reveal that both the quantum confinement of carriers in Si NCs and the nonbridging oxygen hole defects in the SiOx layer contribute to the tunable PL. Interestingly, Si NWs grown by Ag/Au bilayer assisted etching exhibit enhanced photocatalytic degradation of methylene blue in comparison to Si NWs grown by single layer Ag or Au assisted etching. The Schottky barrier present between bimetallic NPs and nanoporous Si NWs with Si-H bonds facilitates the photocatalytic activity by efficient separation of photogenerated e-h pairs. Our results demonstrate the superiority of the Si NW array grown by bilayer assisted etching for their cutting edge applications in optoelectronics and environmental cleaning.
authors.affiliation: Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039, India. giri@iitg.ernet.in.
authors.forename: Ramesh
authors.initials: R
authors.lastname: Ghosh
authors.affiliation: Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan.
authors.forename: Kenji
authors.initials: K
authors.lastname: Imakita
authors.affiliation: Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan.
authors.forename: Minoru
authors.initials: M
authors.lastname: Fujii
authors.affiliation: Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039, India. giri@iitg.ernet.in and Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati-781039, India.
authors.forename: P K
authors.initials: PK
authors.lastname: Giri