title: Effect of Yb(3+) on the Crystal Structural Modification and Photoluminescence Properties of GGAG:Ce(3+).
abstract: Gadolinium gallium aluminum garnet (GGAG) is a very promising host for the highly efficient luminescence of Ce(3+) and shows potential in radiation detection applications. However, the thermodynamically metastable structure would be slanted against it from getting high transparency. To stabilize the crystal structure of GGAG, Yb(3+) ions were codoped at the Gd(3+) site. It is found that the decomposition of garnet was suppressed and the transparency of GGAG ceramic was evidently improved. Moreover, the photoluminescence of GGAG:Ce(3+),xYb(3+) with different Yb(3+) contents has been investigated. When the Ce(3+) ions were excited under 475 nm, a typical near-infrared region emission of Yb(3+) ions can be observed, where silicon solar cells have the strongest absorption. Basing on the lifetimes of Ce(3+) ions in the GGAG:Ce(3+),xYb(3+) sample, the transfer efficiency from Ce(3+) to Yb(3+) and the theoretical internal quantum efficiency can be calculated and reach up to 86% and 186%, respectively. This would make GGAG:Ce(3+),Yb(3+) a potential attractive downconversion candidate for improving the energy conversion efficiency of crystalline silicon (c-Si) solar cells.
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, 315201, P. R. China.
authors.forename: Zhao-Hua
authors.initials: ZH
authors.lastname: Luo
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, 315201, P. R. China.
authors.forename: Yong-Fu
authors.initials: YF
authors.lastname: Liu
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, 315201, P. R. China.|Department of Chemistry, College of Science, Shanghai University , Shanghai, 200444, P. R. China.
authors.forename: Chang-Hua
authors.initials: CH
authors.lastname: Zhang
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, 315201, P. R. China.|College of Electronic Information and Engineering, Hangzhou Dianzi University , Hangzhou 310018, P. R. China.
authors.forename: Jian-Xin
authors.initials: JX
authors.lastname: Zhang
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, 315201, P. R. China.
authors.forename: Hai-Ming
authors.initials: HM
authors.lastname: Qin
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, 315201, P. R. China.
authors.forename: Hao-Chuan
authors.initials: HC
authors.lastname: Jiang
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, 315201, P. R. China.
authors.forename: Jun
authors.initials: J
authors.lastname: Jiang