title: New progress of high current gasdynamic ion source (invited).
abstract: The experimental and theoretical research carried out at the Institute of Applied Physics resulted in development of a new type of electron cyclotron resonance ion sources (ECRISs)-the gasdynamic ECRIS. The gasdynamic ECRIS features a confinement mechanism in a magnetic trap that is different from Geller's ECRIS confinement, i.e., the quasi-gasdynamic one similar to that in fusion mirror traps. Experimental studies of gasdynamic ECRIS were performed at Simple Mirror Ion Source (SMIS) 37 facility. The plasma was created by 37.5 and 75 GHz gyrotron radiation with power up to 100 kW. High frequency microwaves allowed to create and sustain plasma with significant density (up to 8 × 10(13) cm(-3)) and to maintain the main advantages of conventional ECRIS such as high ionization degree and low ion energy. Reaching such high plasma density relies on the fact that the critical density grows with the microwave frequency squared. High microwave power provided the average electron energy on a level of 50-300 eV enough for efficient ionization even at neutral gas pressure range of 10(-4)-10(-3) mbar. Gasdynamic ECRIS has demonstrated a good performance producing high current (100-300 mA) multi-charged ion beams with moderate average charge (Z = 4-5 for argon). Gasdynamic ECRIS has appeared to be especially effective in low emittance hydrogen and deuterium beams formation. Proton beams with current up to 500 emA and RMS emittance below 0.07 π ⋅ mm ⋅ mrad have been demonstrated in recent experiments.
authors.affiliation: Institute of Applied Physics, Russian Academy of Sciences (IAP RAS), 46 Ul'yanova St., 603950 Nizhny Novgorod, Russia.
authors.forename: V
authors.initials: V
authors.lastname: Skalyga
authors.affiliation: Institute of Applied Physics, Russian Academy of Sciences (IAP RAS), 46 Ul'yanova St., 603950 Nizhny Novgorod, Russia.
authors.forename: I
authors.initials: I
authors.lastname: Izotov
authors.affiliation: Institute of Applied Physics, Russian Academy of Sciences (IAP RAS), 46 Ul'yanova St., 603950 Nizhny Novgorod, Russia.
authors.forename: S
authors.initials: S
authors.lastname: Golubev
authors.affiliation: Institute of Applied Physics, Russian Academy of Sciences (IAP RAS), 46 Ul'yanova St., 603950 Nizhny Novgorod, Russia.
authors.forename: A
authors.initials: A
authors.lastname: Sidorov
authors.affiliation: Institute of Applied Physics, Russian Academy of Sciences (IAP RAS), 46 Ul'yanova St., 603950 Nizhny Novgorod, Russia.
authors.forename: S
authors.initials: S
authors.lastname: Razin
authors.affiliation: Institute of Applied Physics, Russian Academy of Sciences (IAP RAS), 46 Ul'yanova St., 603950 Nizhny Novgorod, Russia.
authors.forename: A
authors.initials: A
authors.lastname: Vodopyanov
authors.affiliation: Department of Physics, University of Jyvaskyla, P.O. Box 35 (YFL), 40500 Jyvaskyla, Finland.
authors.forename: O
authors.initials: O
authors.lastname: Tarvainen
authors.affiliation: Department of Physics, University of Jyvaskyla, P.O. Box 35 (YFL), 40500 Jyvaskyla, Finland.
authors.forename: H
authors.initials: H
authors.lastname: Koivisto
authors.affiliation: Department of Physics, University of Jyvaskyla, P.O. Box 35 (YFL), 40500 Jyvaskyla, Finland.
authors.forename: T
authors.initials: T
authors.lastname: Kalvas