title: A load-lock compatible system for in situ electrical resistivity measurements during thin film growth.
abstract: An experimental setup designed for in situ electrical resistance measurement during thin film growth is described. The custom-built sample holder with a four-point probe arrangement can be loaded into a high-vacuum magnetron sputter-deposition chamber through a load-lock transfer system, allowing measurements on series of samples without venting the main chamber. Electrical contact is ensured with circular copper tracks inserted in a Teflon plate on a mounting holder station inside the deposition chamber. This configuration creates the possibility to measure thickness-dependent electrical resistance changes with sub-monolayer resolution and is compatible with use of sample rotation during growth. Examples are presented for metallic films with high adatom mobility growing in a Volmer-Weber mode (Ag and Pd) as well as for refractory metal (Mo) with low adatom mobility. Evidence for an amorphous-to-crystalline phase transition at a film thickness of 2.6 nm is reported during growth of Mo on an amorphous Si underlayer, supporting previous findings based on in situ wafer curvature measurements.
authors.affiliation: Département Physique et Mécanique des Matériaux, Institut Pprime, UPR 3346, CNRS-Université de Poitiers, SP2MI Téléport 2, F86962 Chasseneuil-Futuroscope Cedex, France.
authors.forename: J J
authors.initials: JJ
authors.lastname: Colin
authors.affiliation: Département Physique et Mécanique des Matériaux, Institut Pprime, UPR 3346, CNRS-Université de Poitiers, SP2MI Téléport 2, F86962 Chasseneuil-Futuroscope Cedex, France.
authors.forename: Y
authors.initials: Y
authors.lastname: Diot
authors.affiliation: Département Physique et Mécanique des Matériaux, Institut Pprime, UPR 3346, CNRS-Université de Poitiers, SP2MI Téléport 2, F86962 Chasseneuil-Futuroscope Cedex, France.
authors.forename: Ph
authors.initials: P
authors.lastname: Guerin
authors.affiliation: Département Physique et Mécanique des Matériaux, Institut Pprime, UPR 3346, CNRS-Université de Poitiers, SP2MI Téléport 2, F86962 Chasseneuil-Futuroscope Cedex, France.
authors.forename: B
authors.initials: B
authors.lastname: Lamongie
authors.affiliation: Département Physique et Mécanique des Matériaux, Institut Pprime, UPR 3346, CNRS-Université de Poitiers, SP2MI Téléport 2, F86962 Chasseneuil-Futuroscope Cedex, France.
authors.forename: F
authors.initials: F
authors.lastname: Berneau
authors.affiliation: Département Physique et Mécanique des Matériaux, Institut Pprime, UPR 3346, CNRS-Université de Poitiers, SP2MI Téléport 2, F86962 Chasseneuil-Futuroscope Cedex, France.
authors.forename: A
authors.initials: A
authors.lastname: Michel
authors.affiliation: Département Physique et Mécanique des Matériaux, Institut Pprime, UPR 3346, CNRS-Université de Poitiers, SP2MI Téléport 2, F86962 Chasseneuil-Futuroscope Cedex, France.
authors.forename: C
authors.initials: C
authors.lastname: Jaouen
authors.affiliation: Département Physique et Mécanique des Matériaux, Institut Pprime, UPR 3346, CNRS-Université de Poitiers, SP2MI Téléport 2, F86962 Chasseneuil-Futuroscope Cedex, France.
authors.forename: G
authors.initials: G
authors.lastname: Abadias
mesh_terms: D017097:Electric Impedance; D008567:Membranes, Artificial; D008962:Models, Theoretical
chemical_list: D008567:Membranes, Artificial