title: Gate-Dependent Electronic Raman Scattering in Graphene.
abstract: We report the direct observation of polarization resolved electronic Raman scattering in a gated monolayer graphene device. The evolution of the electronic Raman scattering spectra with gate voltage and its polarization dependence are in full agreement with theoretical expectations for nonresonant Raman processes involving interband electron-hole excitations across the Dirac cone. We further show that the spectral dependence of the electronic Raman scattering signal can be simply described by the dynamical polarizability of graphene in the long wavelength limit. The possibility to directly observe Dirac fermion excitations in graphene opens the way to promising Raman investigations of electronic properties of graphene and other 2D crystals.
authors.affiliation: Laboratoire Matériaux et Phénoménes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, Bâtiment Condorcet, 75205 Paris Cedex 13, France.
authors.forename: E
authors.initials: E
authors.lastname: Riccardi
authors.affiliation: Laboratoire Matériaux et Phénoménes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, Bâtiment Condorcet, 75205 Paris Cedex 13, France.
authors.forename: M-A
authors.initials: MA
authors.lastname: Méasson
authors.affiliation: Laboratoire Matériaux et Phénoménes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, Bâtiment Condorcet, 75205 Paris Cedex 13, France.
authors.forename: M
authors.initials: M
authors.lastname: Cazayous
authors.affiliation: Laboratoire Matériaux et Phénoménes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, Bâtiment Condorcet, 75205 Paris Cedex 13, France.
authors.forename: A
authors.initials: A
authors.lastname: Sacuto
authors.affiliation: Laboratoire Matériaux et Phénoménes Quantiques (UMR 7162 CNRS), Université Paris Diderot-Paris 7, Bâtiment Condorcet, 75205 Paris Cedex 13, France.
authors.forename: Y
authors.initials: Y
authors.lastname: Gallais