title: Optoelectronic properties of atomically thin ReSSe with weak interlayer coupling.
abstract: Rhenium dichalcogenides, such as ReS2 and ReSe2, have attracted a lot of interests due to the weak interlayered coupling in these materials. Studies of rhenium based dichalcogenide alloys will help us understand the differences between binary rhenium dichalcogenides. They will also extend the applications of two-dimensional (2D) materials through alloying. In this work, we studied the optoelectronic properties of ReSSe with a S and Se ratio of 1 : 1. The band gap of the ReSSe alloy is investigated by optical absorption spectra as well as theoretical calculations. The alloy shows weak interlayered coupling, as evidenced by the Raman spectrum. A field-effect transistor based on ReSSe shows typical n-type behavior with a mobility of about 3 cm(2) V(-1) s(-1) and an on/off ratio of 10(5), together with the in-plane anisotropic conductivity. The device also shows good photoresponse properties, with a photoresponsivity of 8 A W(-1). The results demonstrated here will provide new avenues for the study of 2D materials with weak interlayer interactions and in-plane anisotropy.
authors.affiliation: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
authors.forename: Fucai
authors.initials: F
authors.lastname: Liu
authors.affiliation: Centre for Disruptive Photonic Technologies, School of Physics and Mathematics Sciences, Nanyang Technological University, Singapore 637371, Singapore.
authors.forename: Shoujun
authors.initials: S
authors.lastname: Zheng
authors.affiliation: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
authors.forename: Apoorva
authors.initials: A
authors.lastname: Chaturvedi
authors.affiliation: National Graphene Institute, University of Manchester, Booth St E, Manchester M13 9PL, UK.
authors.forename: Viktor
authors.initials: V
authors.lastname: Zólyomi
authors.affiliation: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
authors.forename: Jiadong
authors.initials: J
authors.lastname: Zhou
authors.affiliation: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
authors.forename: Qundong
authors.initials: Q
authors.lastname: Fu
authors.affiliation: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
authors.forename: Chao
authors.initials: C
authors.lastname: Zhu
authors.affiliation: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
authors.forename: Peng
authors.initials: P
authors.lastname: Yu
authors.affiliation: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
authors.forename: Qingsheng
authors.initials: Q
authors.lastname: Zeng
authors.affiliation: Physics Department, Lancaster University, Lancaster LA1 4YB, UK.
authors.forename: Neil D
authors.initials: ND
authors.lastname: Drummond
authors.affiliation: Centre for Disruptive Photonic Technologies, School of Physics and Mathematics Sciences, Nanyang Technological University, Singapore 637371, Singapore.
authors.forename: Hong Jin
authors.initials: HJ
authors.lastname: Fan
authors.affiliation: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
authors.forename: Christian
authors.initials: C
authors.lastname: Kloc
authors.affiliation: National Graphene Institute, University of Manchester, Booth St E, Manchester M13 9PL, UK.
authors.forename: Vladimir I
authors.initials: VI
authors.lastname: Fal'ko
authors.affiliation: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg.
authors.forename: Xuexia
authors.initials: X
authors.lastname: He
authors.affiliation: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. xxhe@ntu.edu.sg z.liu@ntu.edu.sg and NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798.
authors.forename: Zheng
authors.initials: Z
authors.lastname: Liu