title: Towards quantification of the crucial impact of auger recombination for the efficiency droop in (AlInGa)N quantum well structures.
abstract: Recent experimental investigations on the reduction of internal quantum efficiency with increasing current density in (AlInGa)N quantum well structures show that Auger recombination is a significant contributor to the so-called "droop" phenomenon. Using photoluminescence (PL) test structures, we find Auger processes are responsible for at least 15 % of the measured efficiency droop. Furthermore, we confirm that electron-electron-hole (nnp) is stronger than electron-hole-hole (npp) Auger recombination in standard LEDs. The ratio of respective Auger coefficients is determined to be in the range 1 < Cnnp/Cnpp ≤ 12. This asymmetry is shown to limit the detection efficiency of Auger processes in our PL-based approach.
authors.forename: Anna
authors.initials: A
authors.lastname: Nirschl
authors.forename: Michael
authors.initials: M
authors.lastname: Binder
authors.forename: Marina
authors.initials: M
authors.lastname: Schmid
authors.forename: Ines
authors.initials: I
authors.lastname: Pietzonka
authors.forename: Hans-Jürgen
authors.initials: HJ
authors.lastname: Lugauer
authors.forename: Roland
authors.initials: R
authors.lastname: Zeisel
authors.forename: Matthias
authors.initials: M
authors.lastname: Sabathil
authors.forename: Dominique
authors.initials: D
authors.lastname: Bougeard
authors.forename: Bastian
authors.initials: B
authors.lastname: Galler