title: A New Theoretical Insight Into ZnO NWs Memristive Behavior.
abstract: Resistive switching memory operation is generally described in terms of formation and rupture of a conductive filament connecting two metal electrodes. Although this model was reported for several device types, its applicability is not guaranteed to all of them. On the basis of density functional theory calculations, we propose a novel switching mechanism suitable to nanowire-based resistive switching memories. For thick devices in particular, the current is highly unlikely to flow through a metallic filament connecting the electrodes. We demonstrate that in the case of ZnO nanowires metal adatoms, spread on the nanowire surface, locally dope the insulating oxide allowing surface conductance even for small metal concentrations.
authors.affiliation: Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino , Corso Duca degli Abruzzi 24, Torino 10129, Italy.
authors.forename: Federico
authors.initials: F
authors.lastname: Raffone
authors.affiliation: Department of Materials Science and Engineering, Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Francesca
authors.initials: F
authors.lastname: Risplendi
authors.affiliation: Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino , Corso Duca degli Abruzzi 24, Torino 10129, Italy.
authors.forename: Giancarlo
authors.initials: G
authors.lastname: Cicero
keywords: Nanowires; RRAM; ZnO; density functional theory (DFT); doping; memristor