title: Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2 /MoS2 Dichalcogenide Heterojunction.
abstract: Mo-based van der Waals heterojunction p-n diodes with p-type α-MoTe2 and n-type MoS2 are fabricated on glass, and demonstrate excellent static and dynamic device performances at a low voltage of 5 V, with an ON/OFF current ratio higher than 10(3) , ideality factors of 1.06, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 322 mA W(-1) , and an external quantum efficiency of 85% under blue-light illumination.
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, South Korea.
authors.forename: Atiye
authors.initials: A
authors.lastname: Pezeshki
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, South Korea.
authors.forename: Seyed Hossein Hosseini
authors.initials: SH
authors.lastname: Shokouh
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, South Korea.
authors.forename: Tavakol
authors.initials: T
authors.lastname: Nazari
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, South Korea.
authors.forename: Kyunghwan
authors.initials: K
authors.lastname: Oh
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, South Korea.
authors.forename: Seongil
authors.initials: S
authors.lastname: Im
keywords: MoS2; heterojunctions; p-n diodes; van der Waals forces; α-MoTe2