title: Molecular ion sources for low energy semiconductor ion implantation (invited).
abstract: Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4(+) ion beams were extracted. Results from devices and some additional concepts are described.
authors.affiliation: Brookhaven National Laboratory, Upton, New York 11973, USA.
authors.forename: A
authors.initials: A
authors.lastname: Hershcovitch
authors.affiliation: High Current Electronics Institute, Siberian Branch of Russian Academy of Sciences, Tomsk 634055, Russia.
authors.forename: V I
authors.initials: VI
authors.lastname: Gushenets
authors.affiliation: Institute for Theoretical and Experimental Physics, Moscow 117218, Russia.
authors.forename: D N
authors.initials: DN
authors.lastname: Seleznev
authors.affiliation: High Current Electronics Institute, Siberian Branch of Russian Academy of Sciences, Tomsk 634055, Russia.
authors.forename: A S
authors.initials: AS
authors.lastname: Bugaev
authors.affiliation: State Scientific Center of the Russian Federation State Research Institute for Chemistry and Technology of Organoelement Compounds, Moscow, Russia.
authors.forename: S
authors.initials: S
authors.lastname: Dugin
authors.affiliation: High Current Electronics Institute, Siberian Branch of Russian Academy of Sciences, Tomsk 634055, Russia.
authors.forename: E M
authors.initials: EM
authors.lastname: Oks
authors.affiliation: Institute for Theoretical and Experimental Physics, Moscow 117218, Russia.
authors.forename: T V
authors.initials: TV
authors.lastname: Kulevoy
authors.affiliation: State Scientific Center of the Russian Federation State Research Institute for Chemistry and Technology of Organoelement Compounds, Moscow, Russia.
authors.forename: O
authors.initials: O
authors.lastname: Alexeyenko
authors.affiliation: Institute for Theoretical and Experimental Physics, Moscow 117218, Russia.
authors.forename: A
authors.initials: A
authors.lastname: Kozlov
authors.affiliation: Institute for Theoretical and Experimental Physics, Moscow 117218, Russia.
authors.forename: G N
authors.initials: GN
authors.lastname: Kropachev
authors.affiliation: Institute for Theoretical and Experimental Physics, Moscow 117218, Russia.
authors.forename: R P
authors.initials: RP
authors.lastname: Kuibeda
authors.affiliation: Institute for Theoretical and Experimental Physics, Moscow 117218, Russia.
authors.forename: S
authors.initials: S
authors.lastname: Minaev
authors.affiliation: High Current Electronics Institute, Siberian Branch of Russian Academy of Sciences, Tomsk 634055, Russia.
authors.forename: A
authors.initials: A
authors.lastname: Vizir
authors.affiliation: High Current Electronics Institute, Siberian Branch of Russian Academy of Sciences, Tomsk 634055, Russia.
authors.forename: G Yu
authors.initials: GY
authors.lastname: Yushkov