title: Transfer-Free Growth of Atomically Thin Transition Metal Disulfides Using a Solution Precursor by a Laser Irradiation Process and Their Application in Low-Power Photodetectors.
abstract: Although chemical vapor deposition is the most common method to synthesize transition metal dichalcogenides (TMDs), several obstacles, such as the high annealing temperature restricting the substrates used in the process and the required transfer causing the formation of wrinkles and defects, must be resolved. Here, we present a novel method to grow patternable two-dimensional (2D) transition metal disulfides (MS2) directly underneath a protective coating layer by spin-coating a liquid chalcogen precursor onto the transition metal oxide layer, followed by a laser irradiation annealing process. Two metal sulfides, molybdenum disulfide (MoS2) and tungsten disulfide (WS2), are investigated in this work. Material characterization reveals the diffusion of sulfur into the oxide layer prior to the formation of the MS2. By controlling the sulfur diffusion, we are able to synthesize continuous MS2 layers beneath the top oxide layer, creating a protective coating layer for the newly formed TMD. Air-stable and low-power photosensing devices fabricated on the synthesized 2D WS2 without the need for a further transfer process demonstrate the potential applicability of TMDs generated via a laser irradiation process.
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University , No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan.
authors.forename: Chi-Chih
authors.initials: CC
authors.lastname: Huang
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University , No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan.
authors.forename: Henry
authors.initials: H
authors.lastname: Medina
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University , No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan.
authors.forename: Yu-Ze
authors.initials: YZ
authors.lastname: Chen
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University , No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan.
authors.forename: Teng-Yu
authors.initials: TY
authors.lastname: Su
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University , No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan.
authors.forename: Jian-Guang
authors.initials: JG
authors.lastname: Li
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University , No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan.
authors.forename: Chia-Wei
authors.initials: CW
authors.lastname: Chen
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University , No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan.
authors.forename: Yu-Ting
authors.initials: YT
authors.lastname: Yen
authors.affiliation: Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China , Chengdu, People's Republic of China.
authors.forename: Zhiming M
authors.initials: ZM
authors.lastname: Wang
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University , No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan.
authors.forename: Yu-Lun
authors.initials: YL
authors.lastname: Chueh
keywords: Laser irradiation; patternable; photodetector; transition metal dichalcogenides