title: Giant-pulse Nd:YVO4 microchip laser with MW-level peak power by emission cross-sectional control.
abstract: We present a giant-pulse generation laser realized by the emission cross-section control of a gain medium in a passively Q-switched Nd:YVO4 microchip laser with a Cr4+:YAG saturable absorber. Up to 1.17 MW peak power and 1.03 mJ pulse energy were obtained with a 100 Hz repetition rate. By combining the Nd:YVO4 crystal with a Sapphire plate, lower temperature difference between a pump region in the gain crystal and a crystal holder was obtained which helped to keep the cavity in stability zone at elevated temperatures and allowed the achievement of the high peak power for this laser system.
authors.forename: Arvydas
authors.initials: A
authors.lastname: Kausas
authors.forename: Takunori
authors.initials: T
authors.lastname: Taira