title: Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments.
abstract: Indium-gallium-zinc oxide (IGZO) films, deposited by sputtering at room temperature, still require activation to achieve satisfactory semiconductor characteristics. Thermal treatment is typically carried out at temperatures above 300 °C. Here, we propose activating sputter- processed IGZO films using simultaneous ultraviolet and thermal (SUT) treatments to decrease the required temperature and enhance their electrical characteristics and stability. SUT treatment effectively decreased the amount of carbon residues and the number of defect sites related to oxygen vacancies and increased the number of metal oxide (M-O) bonds through the decomposition-rearrangement of M-O bonds and oxygen radicals. Activation of IGZO TFTs using the SUT treatment reduced the processing temperature to 150 °C and improved various electrical performance metrics including mobility, on-off ratio, and threshold voltage shift (positive bias stress for 10,000 s) from 3.23 to 15.81 cm(2)/Vs, 3.96 × 10(7) to 1.03 × 10(8), and 11.2 to 7.2 V, respectively.
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea.
authors.forename: Young Jun
authors.initials: YJ
authors.lastname: Tak
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea.
authors.forename: Byung Du
authors.initials: BD
authors.lastname: Ahn
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea.
authors.forename: Sung Pyo
authors.initials: SP
authors.lastname: Park
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea.
authors.forename: Si Joon
authors.initials: SJ
authors.lastname: Kim
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University, Seoul, 100-715, Korea.
authors.forename: Ae Ran
authors.initials: AR
authors.lastname: Song
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University, Seoul, 100-715, Korea.
authors.forename: Kwun-Bum
authors.initials: KB
authors.lastname: Chung
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea.
authors.forename: Hyun Jae
authors.initials: HJ
authors.lastname: Kim