title: Dispersion-type Hall resistance in InSb|Pt hybrid systems.
abstract: In nonmagnetic semiconductors and metals, most of Hall resistance exhibits a linear dependence with applied magnetic fields. In this work, by combining conduction in a metal and a semiconductor under external magnetic fields, we realize a dispersion-type magnetic-field dependence of Hall resistance. The dispersion-type Hall resistance appears in a broad temperature range below 150 K, where quantum linear magnetoresistance is noticeable in the semiconductor substrate. This unconventional Hall response in metal|semiconductor hybrid systems is explained by a change in dominant conduction from the semiconductor to the metal with increasing magnetic field strength.
authors.affiliation: Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.|Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Aoba-ku, Sendai 980-8577, Japan.
authors.forename: Y
authors.initials: Y
authors.lastname: Shiomi
authors.affiliation: Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.|Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Aoba-ku, Sendai 980-8577, Japan.|WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.|Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan.
authors.forename: E
authors.initials: E
authors.lastname: Saitoh