title: Noise and sensitivity characteristics of solid-state nanopores with a boron nitride 2-D membrane on a pyrex substrate.
abstract: We have fabricated highly sensitive and low noise solid-state nanopores with multiple layers of boron nitride (BN) membranes transferred onto a pyrex substrate. Both the dielectric and flicker noise of the device, which have been described as one of the bottlenecks to making highly sensitive 2-D membrane nanopore devices, have been reduced as follows. Firstly, a pyrex substrate with a low dielectric constant (εr = 4.7-5.1) and low dielectric loss (D < 0.001) is used instead of a Si substrate to reduce the dielectric noise of the device. Secondly, flicker noise is minimized by employing a 100 nm thick SiNx supporting layer with a small opening (less than 100 nm) for BN membrane transfer to enhance the mechanical stability. The flicker noise is further reduced by transferring multiple layers of BN instead of a single layer of BN. The resulting multi-layered BN device shows significant reduction of dielectric and 1/f noise as compared to the devices with a single layer of the BN and Si substrate. Furthermore, we demonstrate dsDNA translocations with a high signal to noise ratio around 50 at 100 and 10 kHz bandwidths.
authors.affiliation: Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea. kibum@snu.ac.kr.
authors.forename: Kyeong-Beom
authors.initials: KB
authors.lastname: Park
authors.affiliation: Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea. kibum@snu.ac.kr.
authors.forename: Hyung-Jun
authors.initials: HJ
authors.lastname: Kim
authors.affiliation: Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea. kibum@snu.ac.kr.
authors.forename: Hyun-Mi
authors.initials: HM
authors.lastname: Kim
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University (SKKU), Suwon 440-746, Korea.
authors.forename: Sang A
authors.initials: SA
authors.lastname: Han
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University (SKKU), Suwon 440-746, Korea.
authors.forename: Kang Hyuck
authors.initials: KH
authors.lastname: Lee
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University (SKKU), Suwon 440-746, Korea.
authors.forename: Sang-Woo
authors.initials: SW
authors.lastname: Kim
authors.affiliation: Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea. kibum@snu.ac.kr.
authors.forename: Ki-Bum
authors.initials: KB
authors.lastname: Kim
mesh_terms: D001896:Boron Compounds / Q000737:chemistry*; D004247:DNA / Q000737:chemistry*; D006108:Graphite / Q000737:chemistry; D007477:Ions; D046529:Microscopy, Electron, Transmission; D058608:Nanopores; D036103:Nanotechnology / Q000379:methods*; D059629:Signal-To-Noise Ratio; D012825:Silicon / Q000737:chemistry*; D013816:Thermodynamics
chemical_list: D001896:Boron Compounds; D007477:Ions; C017282:boron nitride; D006108:Graphite; D004247:DNA; D012825:Silicon