title: Development of a microwave ion source for ion implantations.
abstract: A microwave ion source is expected to have a long lifetime, as it has fewer consumables. Thus, we are in the process of developing a microwave ion source for ion implantation applications. In this paper, we report on a newly developed plasma chamber and the extracted P(+) beam currents. The volume of the plasma chamber is optimized by varying the length of a boron nitride block installed within the chamber. The extracted P(+) beam current is more than 30 mA, at a 25 kV acceleration voltage, using PH3 gas.
authors.affiliation: Technology Research Center, Sumitomo Heavy Industries Ltd., Yokosuka, Kanagawa 237-8555, Japan.
authors.forename: N
authors.initials: N
authors.lastname: Takahashi
authors.affiliation: Technology Research Center, Sumitomo Heavy Industries Ltd., Yokosuka, Kanagawa 237-8555, Japan.
authors.forename: H
authors.initials: H
authors.lastname: Murata
authors.affiliation: Technology Research Center, Sumitomo Heavy Industries Ltd., Yokosuka, Kanagawa 237-8555, Japan.
authors.forename: H
authors.initials: H
authors.lastname: Kitami
authors.affiliation: Technology Research Center, Sumitomo Heavy Industries Ltd., Yokosuka, Kanagawa 237-8555, Japan.
authors.forename: H
authors.initials: H
authors.lastname: Mitsubori
authors.affiliation: Technology Research Center, Sumitomo Heavy Industries Ltd., Yokosuka, Kanagawa 237-8555, Japan.
authors.forename: J
authors.initials: J
authors.lastname: Sakuraba
authors.affiliation: Technology Research Center, Sumitomo Heavy Industries Ltd., Yokosuka, Kanagawa 237-8555, Japan.
authors.forename: T
authors.initials: T
authors.lastname: Soga
authors.affiliation: Technology Research Center, Sumitomo Heavy Industries Ltd., Yokosuka, Kanagawa 237-8555, Japan.
authors.forename: Y
authors.initials: Y
authors.lastname: Aoki
authors.affiliation: Technology Research Center, Sumitomo Heavy Industries Ltd., Yokosuka, Kanagawa 237-8555, Japan.
authors.forename: T
authors.initials: T
authors.lastname: Katoh