title: Boron ion beam generation utilizing lanthanum hexaboride cathodes: Comparison of vacuum arc and planar magnetron glow.
abstract: Boron ion beams are widely used for semiconductor ion implantation and for surface modification for improving the operating parameters and increasing the lifetime of machine parts and tools. For the latter application, the purity requirements of boron ion beams are not as stringent as for semiconductor technology, and a composite cathode of lanthanum hexaboride may be suitable for the production of boron ions. We have explored the use of two different approaches to boron plasma production: vacuum arc and planar high power impulse magnetron in self-sputtering mode. For the arc discharge, the boron plasma is generated at cathode spots, whereas for the magnetron discharge, the main process is sputtering of cathode material. We present here the results of comparative test experiments for both kinds of discharge, aimed at determining the optimal discharge parameters for maximum yield of boron ions. For both discharges, the extracted ion beam current reaches hundreds of milliamps and the fraction of boron ions in the total extracted ion beam is as high as 80%.
authors.affiliation: High Current Electronics Institute, Siberian Branch of the Russian Academy of Science, Tomsk 634055, Russia.
authors.forename: A G
authors.initials: AG
authors.lastname: Nikolaev
authors.affiliation: High Current Electronics Institute, Siberian Branch of the Russian Academy of Science, Tomsk 634055, Russia.
authors.forename: E M
authors.initials: EM
authors.lastname: Oks
authors.affiliation: High Current Electronics Institute, Siberian Branch of the Russian Academy of Science, Tomsk 634055, Russia.
authors.forename: A V
authors.initials: AV
authors.lastname: Vizir
authors.affiliation: High Current Electronics Institute, Siberian Branch of the Russian Academy of Science, Tomsk 634055, Russia.
authors.forename: G Yu
authors.initials: GY
authors.lastname: Yushkov
authors.affiliation: High Current Electronics Institute, Siberian Branch of the Russian Academy of Science, Tomsk 634055, Russia.
authors.forename: V P
authors.initials: VP
authors.lastname: Frolova