title: Ultra-compact III‒V-on-Si photonic crystal memory for flip-flop operation at 5 Gb/s.
abstract: We report on a photonic crystal (PhC) nanolaser based on the heterogeneous integration of a III-V PhC nanocavity on SOI, configured to operate as a Set-Reset Flip-Flop (SR-FF). The active layer is a nanobeam cavity made of a 650 nm × 285 nm InP-based wire waveguide evanescently coupled to 500 nm × 220 nm SOI wire waveguides, demonstrating a record-low footprint of only 6.2 μm2. Injection locking enables optical bistability allowing for memory operation with only 6.4 fJ/bit switching energies and <50 ps response times. Bit-level SR-FF memory operation was evaluated at 5 Gb/s with PRBS-resembling data patterns, revealing error free operation with a negative power penalty.
authors.forename: D
authors.initials: D
authors.lastname: Fitsios
authors.forename: T
authors.initials: T
authors.lastname: Alexoudi
authors.forename: A
authors.initials: A
authors.lastname: Bazin
authors.forename: P
authors.initials: P
authors.lastname: Monnier
authors.forename: R
authors.initials: R
authors.lastname: Raj
authors.forename: A
authors.initials: A
authors.lastname: Miliou
authors.forename: G T
authors.initials: GT
authors.lastname: Kanellos
authors.forename: N
authors.initials: N
authors.lastname: Pleros
authors.forename: F
authors.initials: F
authors.lastname: Raineri