title: Fabrication and Photoluminescence Study of Large-Area Ordered and Size-Controlled GeSi Multi-quantum-well Nanopillar Arrays.
abstract: Large-area ordered GeSi multi-quantum-well nanopillar array (MQW-NPA) samples with different nanopillar lateral sizes (270, 120, and 70 nm) are fabricated by a cost-effective and scalable dry-etching process in combination with nanosphere lithography technique. A significant enhancement in photoluminescence (PL) intensity has been observed in the GeSi MQW-NPA samples compared with the as-grown GeSi MQW one. Nanopillar samples with different lateral sizes show different enhancements in PL intensity. The enhancements are analyzed quantitatively and attributed to three factors. One is the antireflection of the nanopillar structures. Another is an enhanced extraction in nanopillar arrays at the emission wavelength. Thirdly, the GeSi quantum wells in close proximity to the substrates would have more contribution to the PL than before etching. Our results show that all the three factors should be taken into account in designing and fabricating surface microstructures of GeSi MQW materials in order to improve their optical properties.
authors.affiliation: State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Collaborative Innovative Center of Advanced Microstructures, Department of Physics, Fudan University, Shanghai, 200433, Peoples' Republic of China. yuwenjiang13@fudan.edu.cn.
authors.forename: Yuwen
authors.initials: Y
authors.lastname: Jiang
authors.affiliation: State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Collaborative Innovative Center of Advanced Microstructures, Department of Physics, Fudan University, Shanghai, 200433, Peoples' Republic of China. shufanhuang12@fudan.edu.cn.
authors.forename: Shufan
authors.initials: S
authors.lastname: Huang
authors.affiliation: Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, Peoples' Republic of China. jianshen896@163.com.
authors.forename: Zhichao
authors.initials: Z
authors.lastname: Zhu
authors.affiliation: Wuhan National Laboratory for Optoelectronic, School of Optoelectronic Science and Engineering, Hua Zhong University of Science and Technology, Wuhan, 430074, Peoples' Republic of China. zengchengwuli@yeah.net.
authors.forename: Cheng
authors.initials: C
authors.lastname: Zeng
authors.affiliation: State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Collaborative Innovative Center of Advanced Microstructures, Department of Physics, Fudan University, Shanghai, 200433, Peoples' Republic of China. ylfan@fudan.edu.cn.
authors.forename: Yongliang
authors.initials: Y
authors.lastname: Fan
authors.affiliation: State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Collaborative Innovative Center of Advanced Microstructures, Department of Physics, Fudan University, Shanghai, 200433, Peoples' Republic of China. zmjiang@fudan.edu.cn.
authors.forename: Zuimin
authors.initials: Z
authors.lastname: Jiang
keywords: GeSi; Nanopillars; Photoluminescence; Quantum wells