title: Carbon nanotube intramolecular p-i-n junction diodes with symmetric and asymmetric contacts.
abstract: A p-i-n junction diode based on the selectively doped single-walled carbon nanotube (SWCNT) had been investigated, in which two opposite ends of individual SWCNT channel were doped into the p- and n-type SWCNT respectively while the middle segment of SWCNT was kept as the intrinsic. The symmetric and asymmetric contacts were used to fabricate the p-i-n junction diodes respectively and studied the effect of the contact on the device characteristics. It was shown that a low reverse saturation current of ~20 pA could be achieved by these both diodes. We found that the use of the asymmetric contact can effectively improve the performance of the p-i-n diode, with the rectification ratio enhanced from ~10(2) for the device with the Au/Au symmetric contact to >10(3) for the one with the Pd/Al asymmetric contact. The improvement of the device performance by the asymmetric-contact structure was attributed to the decrease of the effective Schottky-barrier height at the contacts under forward bias, increasing the forward current of the diode. The p-i-n diode with asymmetric contact also had a higher rectification ratio than its counterpart before doping the SWCNT channel, which is because that the p-i-n junction in the device decreased the reverse saturated current.
authors.affiliation: Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic, Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
authors.forename: Changxin
authors.initials: C
authors.lastname: Chen
authors.affiliation: Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic, Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.|School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China.
authors.forename: Chenghao
authors.initials: C
authors.lastname: Liao
authors.affiliation: Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic, Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
authors.forename: Liangming
authors.initials: L
authors.lastname: Wei
authors.affiliation: Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic, Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
authors.forename: Hanqing
authors.initials: H
authors.lastname: Zhong
authors.affiliation: Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic, Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
authors.forename: Rong
authors.initials: R
authors.lastname: He
authors.affiliation: Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic, Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
authors.forename: Qinran
authors.initials: Q
authors.lastname: Liu
authors.affiliation: Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic, Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
authors.forename: Xiaodong
authors.initials: X
authors.lastname: Liu
authors.affiliation: School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China.
authors.forename: Yunfeng
authors.initials: Y
authors.lastname: Lai
authors.affiliation: Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic, Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
authors.forename: Chuanjuan
authors.initials: C
authors.lastname: Song
authors.affiliation: Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic, Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
authors.forename: Tiening
authors.initials: T
authors.lastname: Jin
authors.affiliation: Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic, Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
authors.forename: Yafei
authors.initials: Y
authors.lastname: Zhang