title: Controlling the Resistive Switching Behavior in Starch-Based Flexible Biomemristors.
abstract: Implementation of biocompatible materials in resistive switching memory (ReRAM) devices provides opportunities to use them in biomedical applications. We demonstrate a robust, nonvolatile, flexible, and transparent ReRAM based on potato starch. We also introduce a biomolecular memory device that has a starch-chitosan composite layer. The ReRAM behavior can be controlled by mixing starch with chitosan in the resistive switching layer. Whereas starch-based biomemory devices which show abrupt changes in current level; the memory device with mixed biopolymers undergoes gradual changes. Both devices exhibit uniform and robust programmable memory properties for nonvolatile memory applications. The explicated source of the bipolar resistive switching behavior is assigned to formation and rupture of carbon-rich filaments. The gradual set/reset behavior in the memory device based on a starch-chitosan mixture makes it suitable for use in neuromorphic devices.
authors.affiliation: Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) , Pohang 790-784, South Korea.
authors.forename: Niloufar
authors.initials: N
authors.lastname: Raeis-Hosseini
authors.affiliation: Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) , Pohang 790-784, South Korea.
authors.forename: Jang-Sik
authors.initials: JS
authors.lastname: Lee
mesh_terms: D048271:Chitosan / Q000737:chemistry*; D006046:Gold / Q000737:chemistry*; D013213:Starch / Q000737:chemistry*
chemical_list: D006046:Gold; D013213:Starch; D048271:Chitosan
keywords: biopolymer; chitosan; conduction mechanism; resistive switching memory; starch