title: Investigation of the Performance of HEMT-Based NO, NO₂ and NH₃ Exhaust Gas Sensors for Automotive Antipollution Systems.
abstract: We report improved sensitivity to NO, NO₂ and NH₃ gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO₂ and 15 ppm-NH₃ is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time.
authors.affiliation: Georgia Tech Lorraine, Georgia Tech- Centre National de la Recherche Scientifique (CNRS), Unité Mixte Internationale (UMI 2958), 2-3 rue Marconi, Metz 57070, France. yacine.hal@gmail.com.|Peugeot Citroën PSA, 75 Avenue de la Grande Armée, Paris 75116, France. yacine.hal@gmail.com.
authors.forename: Yacine
authors.initials: Y
authors.lastname: Halfaya
authors.affiliation: Georgia Tech Lorraine, Georgia Tech- Centre National de la Recherche Scientifique (CNRS), Unité Mixte Internationale (UMI 2958), 2-3 rue Marconi, Metz 57070, France. cbishop@georgiatech-metz.fr.|School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA. cbishop@georgiatech-metz.fr.
authors.forename: Chris
authors.initials: C
authors.lastname: Bishop
authors.affiliation: Institute d'Electronique, de Microélectronique et de Nanotechnologie, Centre National de Recherche Scientifique (IEMN/CNRS) 8520, Université de Lille Science et technologies, Villeneuve d'Ascq 59652, France. ali.soltani@iemn.univ-lille1.fr.
authors.forename: Ali
authors.initials: A
authors.lastname: Soltani
authors.affiliation: Georgia Tech Lorraine, Georgia Tech- Centre National de la Recherche Scientifique (CNRS), Unité Mixte Internationale (UMI 2958), 2-3 rue Marconi, Metz 57070, France. suresh9111@gmail.com.
authors.forename: Suresh
authors.initials: S
authors.lastname: Sundaram
authors.affiliation: Peugeot Citroën PSA, 75 Avenue de la Grande Armée, Paris 75116, France. vincent.aubry@mpsa.com.
authors.forename: Vincent
authors.initials: V
authors.lastname: Aubry
authors.affiliation: Georgia Tech Lorraine, Georgia Tech- Centre National de la Recherche Scientifique (CNRS), Unité Mixte Internationale (UMI 2958), 2-3 rue Marconi, Metz 57070, France. paul.voss@ece.gatech.edu.|School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA. paul.voss@ece.gatech.edu.
authors.forename: Paul L
authors.initials: PL
authors.lastname: Voss
authors.affiliation: Georgia Tech Lorraine, Georgia Tech- Centre National de la Recherche Scientifique (CNRS), Unité Mixte Internationale (UMI 2958), 2-3 rue Marconi, Metz 57070, France. salvestr@metz.supelec.fr.|Université de Lorraine, LMOPS EA 4423, 2 rue E. Belin, 57070 Metz, France. salvestr@metz.supelec.fr.
authors.forename: Jean-Paul
authors.initials: JP
authors.lastname: Salvestrini
authors.affiliation: Georgia Tech Lorraine, Georgia Tech- Centre National de la Recherche Scientifique (CNRS), Unité Mixte Internationale (UMI 2958), 2-3 rue Marconi, Metz 57070, France. aougazza@georgiatech-metz.fr.|School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA. aougazza@georgiatech-metz.fr.
authors.forename: Abdallah
authors.initials: A
authors.lastname: Ougazzaden
keywords: AlGaN/GaN heterostructure; HEMT transistor; NOx and NH3; automotive exhaust line; gas sensor