title: Full-scale computation for all the thermoelectric property parameters of half-Heusler compounds.
abstract: The thermoelectric performance of materials relies substantially on the band structures that determine the electronic and phononic transports, while the transport behaviors compete and counter-act for the power factor PF and figure-of-merit ZT. These issues make a full-scale computation of the whole set of thermoelectric parameters particularly attractive, while a calculation scheme of the electronic and phononic contributions to thermal conductivity remains yet challenging. In this work, we present a full-scale computation scheme based on the first-principles calculations by choosing a set of doped half-Heusler compounds as examples for illustration. The electronic structure is computed using the WIEN2k code and the carrier relaxation times for electrons and holes are calculated using the Bardeen and Shockley's deformation potential (DP) theory. The finite-temperature electronic transport is evaluated within the framework of Boltzmann transport theory. In sequence, the density functional perturbation combined with the quasi-harmonic approximation and the Klemens' equation is implemented for calculating the lattice thermal conductivity of carrier-doped thermoelectric materials such as Ti-doped NbFeSb compounds without losing a generality. The calculated results show good agreement with experimental data. The present methodology represents an effective and powerful approach to calculate the whole set of thermoelectric properties for thermoelectric materials.
authors.affiliation: Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: A J
authors.initials: AJ
authors.lastname: Hong
authors.affiliation: Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: L
authors.initials: L
authors.lastname: Li
authors.affiliation: Department of Physics and TcSUH, University of Houston, Houston, TX 77204, USA.
authors.forename: R
authors.initials: R
authors.lastname: He
authors.affiliation: Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: J J
authors.initials: JJ
authors.lastname: Gong
authors.affiliation: Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Z B
authors.initials: ZB
authors.lastname: Yan
authors.affiliation: Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: K F
authors.initials: KF
authors.lastname: Wang
authors.affiliation: Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: J-M
authors.initials: JM
authors.lastname: Liu
authors.affiliation: Department of Physics and TcSUH, University of Houston, Houston, TX 77204, USA.
authors.forename: Z F
authors.initials: ZF
authors.lastname: Ren