title: Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.
abstract: Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, 220 Han Dan Road, Shanghai, China.
authors.forename: Sheng-Xun
authors.initials: SX
authors.lastname: Zhao
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, 220 Han Dan Road, Shanghai, China.
authors.forename: Xiao-Yong
authors.initials: XY
authors.lastname: Liu
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, 220 Han Dan Road, Shanghai, China.
authors.forename: Lin-Qing
authors.initials: LQ
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, 220 Han Dan Road, Shanghai, China.
authors.forename: Hong-Fan
authors.initials: HF
authors.lastname: Huang
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, 220 Han Dan Road, Shanghai, China. shijinshan@fudan.edu.cn.
authors.forename: Jin-Shan
authors.initials: JS
authors.lastname: Shi
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, 220 Han Dan Road, Shanghai, China.
authors.forename: Peng-Fei
authors.initials: PF
authors.lastname: Wang
keywords: 2-DEG; ALD; AlGaN/GaN HEMT; Passivation