title: Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.
abstract: We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In situ structural and chemical analyses reveal stoichiometric layered film growth with atomically smooth surface morphologies. Film growth along the (001) direction is confirmed by X-ray diffraction, and the crystalline nature of growth in the 2H phase is evident from Raman spectroscopy. Transmission electron microscopy is used to confirm the layered film structure and hexagonal arrangement of surface atoms. Temperature-dependent electrical measurements show an insulating behavior that agrees well with a two-dimensional variable-range hopping model, suggesting that transport in these films is dominated by localized charge-carrier states.
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Anupam
authors.initials: A
authors.lastname: Roy
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Hema C P
authors.initials: HC
authors.lastname: Movva
authors.affiliation: Surface Physics and Material Science Division, Saha Institute of Nuclear Physics , 1/AF, Bidhannagar, Kolkata 700 064, India.
authors.forename: Biswarup
authors.initials: B
authors.lastname: Satpati
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Kyounghwan
authors.initials: K
authors.lastname: Kim
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Rik
authors.initials: R
authors.lastname: Dey
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Amritesh
authors.initials: A
authors.lastname: Rai
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Tanmoy
authors.initials: T
authors.lastname: Pramanik
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Samaresh
authors.initials: S
authors.lastname: Guchhait
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Emanuel
authors.initials: E
authors.lastname: Tutuc
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Sanjay K
authors.initials: SK
authors.lastname: Banerjee
keywords: molecular beam epitaxy; molybdenum diselenide; molybdenum ditelluride; transmission electron microscopy; two-dimensional; variable-range hopping