title: Structural Phase Transition Effect on Resistive Switching Behavior of MoS2 -Polyvinylpyrrolidone Nanocomposites Films for Flexible Memory Devices.
abstract: The 2H phase and 1T phase coexisting in the same molybdenum disulfide (MoS2 ) nanosheets can influence the electronic properties of the materials. The 1T phase of MoS2 is introduced into the 2H-MoS2 nanosheets by two-step hydrothermal synthetic methods. Two types of nonvolatile memory effects, namely write-once read-many times memory and rewritable memory effect, are observed in the flexible memory devices with the configuration of Al/1T@2H-MoS2 -polyvinylpyrrolidone (PVP)/indium tin oxide (ITO)/polyethylene terephthalate (PET) and Al/2H-MoS2 -PVP/ITO/PET, respectively. It is observed that structural phase transition in MoS2 nanosheets plays an important role on the resistive switching behaviors of the MoS2 -based device. It is hoped that our results can offer a general route for the preparation of various promising nanocomposites based on 2D nanosheets of layered transition metal dichalcogenides for fabricating the high performance and flexible nonvolatile memory devices through regulating the phase structure in the 2D nanosheets.
authors.affiliation: Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou, 730000, P. R. China.
authors.forename: Peng
authors.initials: P
authors.lastname: Zhang
authors.affiliation: Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou, 730000, P. R. China.
authors.forename: Cunxu
authors.initials: C
authors.lastname: Gao
authors.affiliation: Key Laboratory of Nonferrous Metals Chemistry and Resources Utilization of Gansu Province and State Key Laboratory of Applied Organic Chemistry, College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, P. R. China.
authors.forename: Benhua
authors.initials: B
authors.lastname: Xu
authors.affiliation: Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou, 730000, P. R. China.
authors.forename: Lin
authors.initials: L
authors.lastname: Qi
authors.affiliation: Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou, 730000, P. R. China.
authors.forename: Changjun
authors.initials: C
authors.lastname: Jiang
authors.affiliation: Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou, 730000, P. R. China.
authors.forename: Meizhen
authors.initials: M
authors.lastname: Gao
authors.affiliation: Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou, 730000, P. R. China.
authors.forename: Desheng
authors.initials: D
authors.lastname: Xue
keywords: MoS2 nanosheets; hybrid nanomaterials; memory devices; polymers; structural phase transition