title: Surface grafting of octylamine onto poly(ethylene-alt-maleic anhydride) gate insulators for low-voltage DNTT thin-film transistors.
abstract: This study investigates a spin-coating method for modifying the surface properties of a poly(ethylene-alt-maleic anhydride) (PEMA) gate insulator. The 60 nm-thick PEMA thin film exhibits excellent electrical insulating properties, and its surface properties could be easily modified by surface grafting of octylamine. Due to surface treatment via spin-coating, the surface energy of the PEMA gate insulator decreased, the crystal quality of the organic semiconductor improved, and consequently the performance of low-voltage organic thin-film transistors (TFTs) was enhanced. Our results suggest that the surface treatment of the PEMA gate insulator could be a simple and effective method for enhancing the performance of organic TFTs.
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea. yunho@krict.re.kr and School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
authors.forename: Yun-Seo
authors.initials: YS
authors.lastname: Choe
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea. yunho@krict.re.kr.
authors.forename: Mi Hye
authors.initials: MH
authors.lastname: Yi
authors.affiliation: School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
authors.forename: Ji-Heung
authors.initials: JH
authors.lastname: Kim
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea. yunho@krict.re.kr.
authors.forename: Yun Ho
authors.initials: YH
authors.lastname: Kim
authors.affiliation: Department of Chemical Engineering, Hankyong National University, Anseong 17579, Republic of Korea. jang@hknu.ac.kr.
authors.forename: Kwang-Suk
authors.initials: KS
authors.lastname: Jang