title: Optically tuned terahertz modulator based on annealed multilayer MoS2.
abstract: Controlling the propagation properties of terahertz waves is very important in terahertz technologies applied in high-speed communication. Therefore a new-type optically tuned terahertz modulator based on multilayer-MoS2 and silicon is experimentally demonstrated. The terahertz transmission could be significantly modulated by changing the power of the pumping laser. With an annealing treatment as a p-doping method, MoS2 on silicon demonstrates a triple enhancement of terahertz modulation depth compared with the bare silicon. This MoS2-based device even exhibited much higher modulation efficiency than the graphene-based device. We also analyzed the mechanism of the modulation enhancement originated from annealed MoS2, and found that it is different from that of graphene-based device. The unique optical modulating properties of the device exhibit tremendous promise for applications in terahertz switch.
authors.affiliation: State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.|State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
authors.forename: Yapeng
authors.initials: Y
authors.lastname: Cao
authors.affiliation: Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China.
authors.forename: Sheng
authors.initials: S
authors.lastname: Gan
authors.affiliation: State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.|School of Information Engineering, Minzu University of China, Beijing 100081, China.
authors.forename: Zhaoxin
authors.initials: Z
authors.lastname: Geng
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
authors.forename: Jian
authors.initials: J
authors.lastname: Liu
authors.affiliation: College of Science, Minzu University of China, Beijing 100081, China.
authors.forename: Yuping
authors.initials: Y
authors.lastname: Yang
authors.affiliation: Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China.
authors.forename: Qiaoling
authors.initials: Q
authors.lastname: Bao
authors.affiliation: State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
authors.forename: Hongda
authors.initials: H
authors.lastname: Chen