title: Localized surface plasmon resonances dominated giant lateral photovoltaic effect observed in ZnO/Ag/Si nanostructure.
abstract: We report substantially enlarged lateral photovoltaic effect (LPE) in the ZnO/Ag/Si nanostructures. The maximum LPE sensitivity (55.05 mv/mm) obtained in this structure is about seven times larger than that observed in the control sample (7.88 mv/mm) of ZnO/Si. We attribute this phenomenon to the strong localized surface plasmon resonances (LSPRs) induced by nano Ag semicontinuous films. Quite different from the traditional LPE in PN junction type structures, in which light-generated carriers contributed to LPE merely depends on direct excitation of light in semiconductor, this work firstly demonstrates that, by introducing a super thin metal Ag in the interface between two different kinds of semiconductors, the nanoscale Ag embedded in the interface will produce strong resonance of localized field, causing extra intraband excitation, interband excitation and an enhanced direct excitation. As a consequence, these LSPRs dominated contributions harvest much more carriers, giving rise to a greatly enhanced LPE. In particular, this LSPRs-driven mechanism constitutes a sharp contrast to the traditional LPE operation mechanism. This work suggests a brand new LSPRs approach for tailoring LPE-based devices and also opens avenues of research within current photoelectric sensors area.
authors.affiliation: The State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, and the Key Laboratory of Thin Film and Nano-microfabrication Technology of the Ministry of Education, Shanghai JiaoTong University, 800 Dongchuan Rd, Shanghai 200240, P.R. China.
authors.forename: Ke
authors.initials: K
authors.lastname: Zhang
authors.affiliation: The State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, and the Key Laboratory of Thin Film and Nano-microfabrication Technology of the Ministry of Education, Shanghai JiaoTong University, 800 Dongchuan Rd, Shanghai 200240, P.R. China.
authors.forename: Hui
authors.initials: H
authors.lastname: Wang
authors.affiliation: The State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, and the Key Laboratory of Thin Film and Nano-microfabrication Technology of the Ministry of Education, Shanghai JiaoTong University, 800 Dongchuan Rd, Shanghai 200240, P.R. China.
authors.forename: Zhikai
authors.initials: Z
authors.lastname: Gan
authors.affiliation: The State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, and the Key Laboratory of Thin Film and Nano-microfabrication Technology of the Ministry of Education, Shanghai JiaoTong University, 800 Dongchuan Rd, Shanghai 200240, P.R. China.
authors.forename: Peiqi
authors.initials: P
authors.lastname: Zhou
authors.affiliation: The State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, and the Key Laboratory of Thin Film and Nano-microfabrication Technology of the Ministry of Education, Shanghai JiaoTong University, 800 Dongchuan Rd, Shanghai 200240, P.R. China.
authors.forename: Chunlian
authors.initials: C
authors.lastname: Mei
authors.affiliation: The State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, and the Key Laboratory of Thin Film and Nano-microfabrication Technology of the Ministry of Education, Shanghai JiaoTong University, 800 Dongchuan Rd, Shanghai 200240, P.R. China.
authors.forename: Xu
authors.initials: X
authors.lastname: Huang
authors.affiliation: The State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, and the Key Laboratory of Thin Film and Nano-microfabrication Technology of the Ministry of Education, Shanghai JiaoTong University, 800 Dongchuan Rd, Shanghai 200240, P.R. China.
authors.forename: Yuxing
authors.initials: Y
authors.lastname: Xia