title: p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect.
abstract: A plasma-induced p-type MoS2 flake and n-type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated. Under 365 nm optical irradiation, this p-n diode shows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms. By increasing the pressure on the junction to 23 MPa, the photocurrent can be enhanced by a factor of four through the piezophototronic effect.
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.
authors.forename: Fei
authors.initials: F
authors.lastname: Xue
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.
authors.forename: Libo
authors.initials: L
authors.lastname: Chen
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.
authors.forename: Jian
authors.initials: J
authors.lastname: Chen
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.
authors.forename: Jingbin
authors.initials: J
authors.lastname: Liu
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.
authors.forename: Longfei
authors.initials: L
authors.lastname: Wang
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.
authors.forename: Mengxiao
authors.initials: M
authors.lastname: Chen
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.
authors.forename: Yaokun
authors.initials: Y
authors.lastname: Pang
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.
authors.forename: Xiaonian
authors.initials: X
authors.lastname: Yang
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.
authors.forename: Guoyun
authors.initials: G
authors.lastname: Gao
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.
authors.forename: Junyi
authors.initials: J
authors.lastname: Zhai
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.|School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang
keywords: diodes; n-type ZnO; p-type MoS2; photoresponse; piezophototronic effect