title: Phosphorus Doping in Si Nanocrystals/SiO2 multilayers and Light Emission with Wavelength compatible for Optical Telecommunication.
abstract: Doping in semiconductors is a fundamental issue for developing high performance devices. However, the doping behavior in Si nanocrystals (Si NCs) has not been fully understood so far. In the present work, P-doped Si NCs/SiO2 multilayers are fabricated. As revealed by XPS and ESR measurements, P dopants will preferentially passivate the surface states of Si NCs. Meanwhile, low temperature ESR spectra indicate that some P dopants are incorporated into Si NCs substitutionally and the incorporated P impurities increase with the P doping concentration or annealing temperature increasing. Furthermore, a kind of defect states will be generated with high doping concentration or annealing temperature due to the damage of Si crystalline lattice. More interestingly, the incorporated P dopants can generate deep levels in the ultra-small sized (~2 nm) Si NCs, which will cause a new subband light emission with the wavelength compatible with the requirement of the optical telecommunication. The studies of P-doped Si NCs/SiO2 multilayers suggest that P doping plays an important role in the electronic structures and optoelectronic characteristics of Si NCs.
authors.affiliation: School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Lu
authors.affiliation: School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
authors.forename: Weiwei
authors.initials: W
authors.lastname: Mu
authors.affiliation: School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
authors.forename: Jun
authors.initials: J
authors.lastname: Xu
authors.affiliation: School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
authors.forename: Xiaowei
authors.initials: X
authors.lastname: Zhang
authors.affiliation: School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
authors.forename: Wenping
authors.initials: W
authors.lastname: Zhang
authors.affiliation: School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Li
authors.affiliation: School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
authors.forename: Ling
authors.initials: L
authors.lastname: Xu
authors.affiliation: School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
authors.forename: Kunji
authors.initials: K
authors.lastname: Chen