title: Photoconductivities in MoS2 Nanoflake Photoconductors.
abstract: Photoconductivities in molybdenum disulfide (MoS2) layered nanostructures with two-hexagonal crystalline structure prepared by mechanical exfoliation were investigated. The photoconductor-type MoS2 nanoflakes exhibit remarkable photoresponse under the above bandgap excitation wavelength of 532 nm at different optical intensity. The photocurrent responsivity and photoconductive gain of nanoflakes can reach, respectively, 30 AW(-1) and 103 at the intensity of 50 Wm(-2), which are several orders of magnitude higher than those of their bulk counterparts. The vacuum-enhanced photocurrent and power-independent responsivity/gain indicate a surface-controlled photoconduction mechanism in the MoS2 nanomaterial.
authors.affiliation: Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan.
authors.forename: Wei-Chu
authors.initials: WC
authors.lastname: Shen
authors.affiliation: Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan. rsc@mail.ntust.edu.tw.
authors.forename: Ruei-San
authors.initials: RS
authors.lastname: Chen
authors.affiliation: Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan.
authors.forename: Ying-Sheng
authors.initials: YS
authors.lastname: Huang
keywords: Gain; Layer semiconductor; Molybdenum disulfide; Nanostructure; Photoconductivity; Responsivity