title: A Process for Topographically Selective Deposition on 3D Nanostructures by Ion Implantation.
abstract: Area-selective atomic layer deposition (AS-ALD) is attracting increasing interest because of its ability to enable both continued dimensional scaling and accurate pattern placement for next-generation nanoelectronics. Here we report a strategy for depositing material onto three-dimensional (3D) nanostructures with topographic selectivity using an ALD process with the aid of an ultrathin hydrophobic surface layer. Using ion implantation of fluorocarbons (CFx), a hydrophobic interfacial layer is formed, which in turn causes significant retardation of nucleation during ALD. We demonstrate the process for Pt ALD on both blanket and 2D patterned substrates. We extend the process to 3D structures, demonstrating that this method can achieve selective anisotropic deposition, selectively inhibiting Pt deposition on deactivated horizontal regions while ensuring that only vertical surfaces are decorated during ALD. The efficacy of the approach for metal oxide ALD also shows promise, though further optimization of the implantation conditions is required. The present work advances practical applications that require area-selective coating of surfaces in a variety of 3D nanostructures according to their topographical orientation.
authors.forename: Woo-Hee
authors.initials: WH
authors.lastname: Kim
authors.forename: Fatemeh Sadat
authors.initials: FS
authors.lastname: Minaye Hashemi
authors.forename: Adriaan J M
authors.initials: AJ
authors.lastname: Mackus
authors.forename: Joseph
authors.initials: J
authors.lastname: Singh
authors.forename: Yeongin
authors.initials: Y
authors.lastname: Kim
authors.forename: Dara
authors.initials: D
authors.lastname: Bobb-Semple
authors.affiliation: Applied Materials , 974 East Arques Avenue, M/S 81280, Sunnyvale, California 94085, United States.
authors.forename: Yin
authors.initials: Y
authors.lastname: Fan
authors.affiliation: Applied Materials , 974 East Arques Avenue, M/S 81280, Sunnyvale, California 94085, United States.
authors.forename: Tobin
authors.initials: T
authors.lastname: Kaufman-Osborn
authors.affiliation: Applied Materials , 974 East Arques Avenue, M/S 81280, Sunnyvale, California 94085, United States.
authors.forename: Ludovic
authors.initials: L
authors.lastname: Godet
authors.forename: Stacey F
authors.initials: SF
authors.lastname: Bent
keywords: 3D nanostructure; area-selective deposition; atomic layer deposition; geometric selectivity; ion implantation