title: Perovskite Solar Cells Based on Low-Temperature Processed Indium Oxide Electron Selective Layers.
abstract: Indium oxide (In2O3) as a promising n-type semiconductor material has been widely employed in optoelectronic applications. In this work, we applied low-temperature solution-processed In2O3 nanocrystalline film as an electron selective layer (ESL) in perovskite solar cells (PSCs) for the first time. By taking advantages of good optical and electrical properties of In2O3 such as high mobility, wide band gap, and high transmittance, we obtained In2O3-based PSCs with a good efficiency exceeding 13% after optimizing the concentration of the precursor solution and the annealing temperature. Furthermore, to enhance the performance of the In2O3-based PSCs, a phenyl-C61-butyric acid methyl ester (PCBM) layer was introduced to modify the surface of the In2O3 film. The PCBM film could fill up the pinholes or cracks along In2O3 grain boundaries to passivate the defects and make the ESL extremely compact and uniform, which is conducive to suppressing the charge recombination. As a result, the efficiency of the In2O3-based PSC was improved to 14.83% accompanied with V(OC), J(SC), and FF being 1.08 V, 20.06 mA cm(-2), and 0.685, respectively.
authors.affiliation: Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University , Wuhan 430072, People's Republic of China.
authors.forename: Minchao
authors.initials: M
authors.lastname: Qin
authors.affiliation: Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University , Wuhan 430072, People's Republic of China.
authors.forename: Junjie
authors.initials: J
authors.lastname: Ma
authors.affiliation: Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University , Wuhan 430072, People's Republic of China.
authors.forename: Weijun
authors.initials: W
authors.lastname: Ke
authors.affiliation: Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University , Wuhan 430072, People's Republic of China.
authors.forename: Pingli
authors.initials: P
authors.lastname: Qin
authors.affiliation: Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University , Wuhan 430072, People's Republic of China.
authors.forename: Hongwei
authors.initials: H
authors.lastname: Lei
authors.affiliation: Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University , Wuhan 430072, People's Republic of China.
authors.forename: Hong
authors.initials: H
authors.lastname: Tao
authors.affiliation: Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University , Wuhan 430072, People's Republic of China.
authors.forename: Xiaolu
authors.initials: X
authors.lastname: Zheng
authors.affiliation: Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University , Wuhan 430072, People's Republic of China.
authors.forename: Liangbin
authors.initials: L
authors.lastname: Xiong
authors.affiliation: Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University , Wuhan 430072, People's Republic of China.
authors.forename: Qin
authors.initials: Q
authors.lastname: Liu
authors.affiliation: Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University , Wuhan 430072, People's Republic of China.
authors.forename: Zhiliang
authors.initials: Z
authors.lastname: Chen
authors.affiliation: Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University , Wuhan 430072, People's Republic of China.
authors.forename: Junzheng
authors.initials: J
authors.lastname: Lu
authors.affiliation: Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University , Wuhan 430072, People's Republic of China.
authors.forename: Guang
authors.initials: G
authors.lastname: Yang
authors.affiliation: Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University , Wuhan 430072, People's Republic of China.
authors.forename: Guojia
authors.initials: G
authors.lastname: Fang
keywords: PCBM; electron selective layer; indium oxide; low temperature; perovskite solar cells; sol−gel method