title: High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C.
abstract: We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm(2)/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites.
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-.749, Republic of Korea.
authors.forename: Won-Gi
authors.initials: WG
authors.lastname: Kim
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-.749, Republic of Korea.
authors.forename: Young Jun
authors.initials: YJ
authors.lastname: Tak
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-.749, Republic of Korea.
authors.forename: Byung
authors.initials: B
authors.lastname: Du Ahn
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-.749, Republic of Korea.
authors.forename: Tae Soo
authors.initials: TS
authors.lastname: Jung
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University, 26, Pil-dong 3-ga, Jung-gu, Seoul, 100-715, Korea.
authors.forename: Kwun-Bum
authors.initials: KB
authors.lastname: Chung
authors.affiliation: School of Electrical and Electronic Engineering, Yonsei, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-.749, Republic of Korea.
authors.forename: Hyun Jae
authors.initials: HJ
authors.lastname: Kim