title: Proton-Conducting Graphene Oxide-Coupled Neuron Transistors for Brain-Inspired Cognitive Systems.
abstract: Proton-conducting graphene oxide electrolyte films with very high electric-double-layer capacitance are used as the gate dielectrics for oxide-based neuron transistor fabrication. Paired-pulse facilitation, dendritic integration, and orientation tuning are successfully emulated. Additionally, neuronal gain controls (arithmetic) are also experimentally demonstrated. The results provide a new-concept approach for building brain-inspired cognitive systems.
authors.affiliation: School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.|Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
authors.forename: Chang Jin
authors.initials: CJ
authors.lastname: Wan
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
authors.forename: Li Qiang
authors.initials: LQ
authors.lastname: Zhu
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
authors.forename: Yang Hui
authors.initials: YH
authors.lastname: Liu
authors.affiliation: School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
authors.forename: Ping
authors.initials: P
authors.lastname: Feng
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
authors.forename: Zhao Ping
authors.initials: ZP
authors.lastname: Liu
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
authors.forename: Hai Liang
authors.initials: HL
authors.lastname: Cao
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
authors.forename: Peng
authors.initials: P
authors.lastname: Xiao
authors.affiliation: School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
authors.forename: Yi
authors.initials: Y
authors.lastname: Shi
authors.affiliation: School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.|Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
authors.forename: Qing
authors.initials: Q
authors.lastname: Wan
mesh_terms: D001921:Brain; D003071:Cognition; D006108:Graphite; D009474:Neurons; D010087:Oxides; D011522:Protons; D014173:Transistors, Electronic
chemical_list: D010087:Oxides; D011522:Protons; D006108:Graphite
keywords: neuromorphic engineering; neuron transistors; proton-conducting graphene oxide