title: Graphene-Molybdenum Disulfide-Graphene Tunneling Junctions with Large-Area Synthesized Materials.
abstract: Tunneling devices based on vertical heterostructures of graphene and other 2D materials can overcome the low on-off ratios typically observed in planar graphene field-effect transistors. This study addresses the impact of processing conditions on two-dimensional materials in a fully integrated heterostructure device fabrication process. In this paper, graphene-molybdenum disulfide-graphene tunneling heterostructures were fabricated using only large-area synthesized materials, unlike previous studies that used small exfoliated flakes. The MoS2 tunneling barrier is either synthesized on a sacrificial substrate and transferred to the bottom-layer graphene or synthesized directly on CVD graphene. The presence of graphene was shown to have no impact on the quality of the grown MoS2. The thickness uniformity of MoS2 grown on graphene and SiO2 was found to be 1.8 ± 0.22 nm. XPS and Raman spectroscopy are used to show how the MoS2 synthesis process introduces defects into the graphene structure by incorporating sulfur into the graphene. The incorporation of sulfur was shown to be greatly reduced in the absence of molybdenum suggesting molybdenum acts as a catalyst for sulfur incorporation. Tunneling simulations based on the Bardeen transfer Hamiltonian were performed and compared to the experimental tunneling results. The simulations show the use of MoS2 as a tunneling barrier suppresses contributions to the tunneling current from the conduction band. This is a result of the observed reduction of electron conduction within the graphene sheets.
authors.affiliation: School of Materials Science and Engineering and ‡Georgia Tech Research Institute, Georgia Institute of Technology , Atlanta, Georgia 30332, United States.
authors.forename: Corey A
authors.initials: CA
authors.lastname: Joiner
authors.affiliation: School of Materials Science and Engineering and ‡Georgia Tech Research Institute, Georgia Institute of Technology , Atlanta, Georgia 30332, United States.
authors.forename: Philip M
authors.initials: PM
authors.lastname: Campbell
authors.affiliation: School of Materials Science and Engineering and ‡Georgia Tech Research Institute, Georgia Institute of Technology , Atlanta, Georgia 30332, United States.
authors.forename: Alexey A
authors.initials: AA
authors.lastname: Tarasov
authors.affiliation: School of Materials Science and Engineering and ‡Georgia Tech Research Institute, Georgia Institute of Technology , Atlanta, Georgia 30332, United States.
authors.forename: Brian R
authors.initials: BR
authors.lastname: Beatty
authors.affiliation: School of Materials Science and Engineering and ‡Georgia Tech Research Institute, Georgia Institute of Technology , Atlanta, Georgia 30332, United States.
authors.forename: Chris J
authors.initials: CJ
authors.lastname: Perini
authors.affiliation: School of Materials Science and Engineering and ‡Georgia Tech Research Institute, Georgia Institute of Technology , Atlanta, Georgia 30332, United States.
authors.forename: Meng-Yen
authors.initials: MY
authors.lastname: Tsai
authors.affiliation: School of Materials Science and Engineering and ‡Georgia Tech Research Institute, Georgia Institute of Technology , Atlanta, Georgia 30332, United States.
authors.forename: William J
authors.initials: WJ
authors.lastname: Ready
authors.affiliation: School of Materials Science and Engineering and ‡Georgia Tech Research Institute, Georgia Institute of Technology , Atlanta, Georgia 30332, United States.
authors.forename: Eric M
authors.initials: EM
authors.lastname: Vogel
keywords: graphene; molybdenum disulfide; synthesis; tunneling field-effect transistor; tunneling junction