title: Rational Design of ZnO:H/ZnO Bilayer Structure for High-Performance Thin-Film Transistors.
abstract: The intriguing properties of zinc oxide-based semiconductors are being extensively studied as they are attractive alternatives to current silicon-based semiconductors for applications in transparent and flexible electronics. Although they have promising properties, significant improvements on performance and electrical reliability of ZnO-based thin film transistors (TFTs) should be achieved before they can be applied widely in practical applications. This work demonstrates a rational and elegant design of TFT, composed of poly crystalline ZnO:H/ZnO bilayer structure without using other metal elements for doping. The field-effect mobility and gate bias stability of the bilayer structured devices have been improved. In this device structure, the hydrogenated ultrathin ZnO:H active layer (∼3 nm) could provide suitable carrier concentration and decrease the interface trap density, while thick pure-ZnO layer could control channel conductance. Based on this novel structure, a high field-effect mobility of 42.6 cm(2) V(-1) s(-1), a high on/off current ratio of 10(8) and a small subthreshold swing of 0.13 V dec(-1) have been achieved. Additionally, the bias stress stability of the bilayer structured devices is enhanced compared to the simple single channel layer ZnO device. These results suggest that the bilayer ZnO:H/ZnO TFTs have a great potential for low-cost thin-film electronics.
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors.forename: Ablat
authors.initials: A
authors.lastname: Abliz
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 30010, Taiwan.
authors.forename: Chun-Wei
authors.initials: CW
authors.lastname: Huang
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors.forename: Jingli
authors.initials: J
authors.lastname: Wang
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Xu
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Liao
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors.forename: Xiangheng
authors.initials: X
authors.lastname: Xiao
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 30010, Taiwan.
authors.forename: Wen-Wei
authors.initials: WW
authors.lastname: Wu
authors.affiliation: Department of Electronic & Computer Engineering, The Hong Kong University of Science & Technology , Clear Water Bay, Kowloon, Hong Kong SAR, China.
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Fan
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors.forename: Changzhong
authors.initials: C
authors.lastname: Jiang
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors.forename: Jinchai
authors.initials: J
authors.lastname: Li
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors.forename: Shishang
authors.initials: S
authors.lastname: Guo
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors.forename: Chuansheng
authors.initials: C
authors.lastname: Liu
authors.affiliation: Institute of Optoelectronic Display, Fuzhou University , Fuzhou 350002, China.
authors.forename: Tailiang
authors.initials: T
authors.lastname: Guo
keywords: ZnO; bilayer structure; hydrogenation; mobility; thin-film transistors