title: Effects of intervalley scattering on the transport properties in one-dimensional valleytronic devices.
abstract: Based on a one-dimensional valley junction model, the effects of intervalley scattering on the valley transport properties are studied. We analytically investigate the valley transport phenomena in three typical junctions with both intervalley and intravalley scattering included. For the tunneling between two gapless valley materials, different from conventional Klein tunneling theory, the transmission probability of the carrier is less than 100% while the pure valley polarization feature still holds. If the junction is composed of at least one gapped valley material, the valley polarization of the carrier is generally imperfect during the tunneling process. Interestingly, in such circumstance, we discover a resonance of valley polarization that can be tuned by the junction potential. The extension of our results to realistic valley materials are also discussed.
authors.affiliation: College of Physics, Optoelectronics and Energy, Soochow University, Suzhou, 215006, China.
authors.forename: Jiaojiao
authors.initials: J
authors.lastname: Zhou
authors.affiliation: Department of Physics, Northwest University, Xian 710069, China.
authors.forename: Shuguang
authors.initials: S
authors.lastname: Cheng
authors.affiliation: College of Physics, Optoelectronics and Energy, Soochow University, Suzhou, 215006, China.
authors.forename: Wen-Long
authors.initials: WL
authors.lastname: You
authors.affiliation: College of Physics, Optoelectronics and Energy, Soochow University, Suzhou, 215006, China.
authors.forename: Hua
authors.initials: H
authors.lastname: Jiang