title: Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure.
abstract: Four years׳ behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic (PV) modules installed in a relatively dry and sunny inland site with a Continental-Mediterranean climate (in the city of Jaén, Spain) are presented in this article. The shared data contributes to clarify how the Light Induced Degradation (LID) impacts the output power generated by the PV array, especially in the first days of exposure under outdoor conditions. Furthermore, a valuable methodology is provided in this data article permitting the assessment of the degradation rate and the stabilization period of the PV modules. Further discussions and interpretations concerning the data shared in this article can be found in the research paper "Characterization of degradation and evaluation of model parameters of amorphous silicon photovoltaic modules under outdoor long term exposure" (Kichou et al., 2016) [1].
authors.affiliation: MNT Group, Electronic Engineering Department, Universitat Politécnica de Catalunya (UPC) BarcelonaTech, C/Jordi Girona 1-3, Campus Nord UPC, 08034 Barcelona, Spain.
authors.forename: Sofiane
authors.initials: S
authors.lastname: Kichou
authors.affiliation: MNT Group, Electronic Engineering Department, Universitat Politécnica de Catalunya (UPC) BarcelonaTech, C/Jordi Girona 1-3, Campus Nord UPC, 08034 Barcelona, Spain.
authors.forename: Santiago
authors.initials: S
authors.lastname: Silvestre
authors.affiliation: IDEA Research Group, University of Jaén, Campus de Las Lagunillas, 23071 Jaén, Spain.
authors.forename: Gustavo
authors.initials: G
authors.lastname: Nofuentes
authors.affiliation: IDEA Research Group, University of Jaén, Campus de Las Lagunillas, 23071 Jaén, Spain.
authors.forename: Miguel
authors.initials: M
authors.lastname: Torres-Ramírez
authors.affiliation: Univ. M׳sila, Fac. Technologies, Dep. Génie Electrique, BP 166 Ichbelia, 28000 M׳sila, Algeria.
authors.forename: Aissa
authors.initials: A
authors.lastname: Chouder
authors.affiliation: Departament d׳EnginyeriaTelemàtica, Universitat Politécnica de Catalunya (UPC) BarcelonaTech. EDIFICI VG1 (EPSEVG), Avda. Víctor Balaguer, 1, 08800 Vilanova i la Geltrú, Spain.
authors.forename: Daniel
authors.initials: D
authors.lastname: Guasch
keywords: Light-induced degradation (LID); Stabilization period; a-Si PV modules