title: When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors.
abstract: One-dimensional semiconductor nanowires (NWs) have been widely applied in photodetector due to their excellent optoelectronic characteristics. However, intrinsic carrier concentration at certain level results in appreciable dark current, which limits the detectivity of the devices. Here, we fabricated a novel type of ferroelectric-enhanced side-gated NW photodetectors. The intrinsic carriers in the NW channel can be fully depleted by the ultrahigh electrostatic field from polarization of P(VDF-TrFE) ferroelectric polymer. In this scenario, the dark current is significantly reduced and thus the sensitivity of the photodetector is increased even when the gate voltage is removed. Particularly, a single InP NW photodetector exhibits high-photoconductive gain of 4.2 × 10(5), responsivity of 2.8 × 10(5) A W(-1), and specific detectivity (D*) of 9.1 × 10(15) Jones at λ = 830 nm. To further demonstrate the universality of the configuration we also demonstrate ferroelectric polymer side-gated single CdS NW photodetectors with ultrahigh photoconductive gain of 1.2 × 10(7), responsivity of 5.2 × 10(6) A W(-1) and D* up to 1.7 × 10(18) Jones at λ = 520 nm. Overall, our work demonstrates a new approach to fabricate a controllable, full-depleted, and high-performance NW photodetector. This can inspire novel device structure design of high-performance optoelectronic devices based on semiconductor NWs.
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.|Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors.forename: Dingshan
authors.initials: D
authors.lastname: Zheng
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.
authors.forename: Jianlu
authors.initials: J
authors.lastname: Wang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.
authors.forename: Weida
authors.initials: W
authors.lastname: Hu
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Liao
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.
authors.forename: Hehai
authors.initials: H
authors.lastname: Fang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.
authors.forename: Nan
authors.initials: N
authors.lastname: Guo
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Wang
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors.forename: Fan
authors.initials: F
authors.lastname: Gong
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.
authors.forename: Xudong
authors.initials: X
authors.lastname: Wang
authors.affiliation: Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology , Hong Kong SAR, China.
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Fan
authors.affiliation: Key Laboratory of Polar Materials and Devices of MOE, East China Normal University , Shanghai 200241, China.
authors.forename: Xing
authors.initials: X
authors.lastname: Wu
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.
authors.forename: Xiangjian
authors.initials: X
authors.lastname: Meng
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.
authors.forename: Xiaoshuang
authors.initials: X
authors.lastname: Chen
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Lu
keywords: Nanowire; ferroelectric polymer; photodetector; photoresponsivity; side-gated