title: Shubnikov-de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe_{2}: Landau Level Degeneracy, Effective Mass, and Negative Compressibility.
abstract: We study the magnetotransport properties of high-mobility holes in monolayer and bilayer WSe_{2}, which display well defined Shubnikov-de Haas (SdH) oscillations, and quantum Hall states in high magnetic fields. In both mono- and bilayer WSe_{2}, the SdH oscillations and the quantum Hall states occur predominantly at even filling factors, evincing a twofold Landau level degeneracy. The Fourier transform analysis of the SdH oscillations in bilayer WSe_{2} reveals the presence of two subbands localized in the top or the bottom layer, as well as negative compressibility. From the temperature dependence of the SdH oscillations we determine a hole effective mass of 0.45m_{0} for both mono- and bilayer WSe_{2}.
authors.affiliation: Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA.
authors.forename: Babak
authors.initials: B
authors.lastname: Fallahazad
authors.affiliation: Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA.
authors.forename: Hema C P
authors.initials: HC
authors.lastname: Movva
authors.affiliation: Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA.
authors.forename: Kyounghwan
authors.initials: K
authors.lastname: Kim
authors.affiliation: Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA.
authors.forename: Stefano
authors.initials: S
authors.lastname: Larentis
authors.affiliation: National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Taniguchi
authors.affiliation: National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Kenji
authors.initials: K
authors.lastname: Watanabe
authors.affiliation: Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA.
authors.forename: Sanjay K
authors.initials: SK
authors.lastname: Banerjee
authors.affiliation: Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA.
authors.forename: Emanuel
authors.initials: E
authors.lastname: Tutuc