title: A new approach for fabrications of SiC based photodetectors.
abstract: We report on a new approach to quickly synthesize high-quality single crystalline wide band gap silicon carbide (SiC) films for development of high-performance deep ultraviolet (UV) photodetectors. The fabricated SiC based UV photodetectors exhibited high response while maintaining cost-effectiveness and size miniaturization. Focus of the experiments was on studies of electrical and electronic properties, as well as responsivity, response and recovery times, and repeatability of the deep UV photodetectors. Raman scattering spectroscopy and scanning electron microscope (SEM) were used to characterize the SiC materials. Analyses of the SEM data indicated that highly flat SiC thin films have been obtained. Based on the synthesized SiC, deep UV detectors are designed, fabricated, and tested with various UV wavelength lights at different radiation intensities. Temperature effect and bias effect on the photocurrent strength and signal-to-noise ratio, humidity effect on the response time and recovery time of the fabricated detectors have been carefully characterized and discussed. The detectors appear to have a very stable baseline and repeatability. The obtained responsivity is more than 40% higher compared to commercial detectors. The good performance of the photodetectors at operating temperature up to 300 °C remains nearly unchanged.
authors.affiliation: Department of Chemistry, College of Science, King Saud University, Riyadh 11451, Saudi Arabia.|King Abdullah Institute for Nanotechnology, King Saud University, Riyadh 11451, Saudi Arabia.
authors.forename: Ali
authors.initials: A
authors.lastname: Aldalbahi
authors.affiliation: Department of Physics, College of Natural Sciences, University of Puerto Rico, San Juan, 00936-8377, PR/USA.
authors.forename: Eric
authors.initials: E
authors.lastname: Li
authors.affiliation: Department of Physics, College of Natural Sciences, University of Puerto Rico, San Juan, 00936-8377, PR/USA.
authors.forename: Manuel
authors.initials: M
authors.lastname: Rivera
authors.affiliation: Department of Physics, College of Natural Sciences, University of Puerto Rico, San Juan, 00936-8377, PR/USA.
authors.forename: Rafael
authors.initials: R
authors.lastname: Velazquez
authors.affiliation: Department of Chemistry, Faculty of Science , Taif University, Saudi Arabia.
authors.forename: Tariq
authors.initials: T
authors.lastname: Altalhi
authors.affiliation: College of Electronic and Information Engineering, Southwest University, Chongqing, 400714, China.
authors.forename: Xiaoyan
authors.initials: X
authors.lastname: Peng
authors.affiliation: Department of Physics, College of Natural Sciences, University of Puerto Rico, San Juan, 00936-8377, PR/USA.
authors.forename: Peter X
authors.initials: PX
authors.lastname: Feng