title: Epitaxially-crystallized oriented naphthalene bis(dicarboximide) morphology for significant performance improvement of electron-transporting thin-film transistors.
abstract: Large-area highly-ordered F-NDI films were obtained by epitaxial-crystallization on highly-oriented PE substrates through vacuum deposition. An electron mobility of 0.2 cm(2) V(-1) s(-1) was achieved based on such epitaxially-crystallized F-NDI films, which is 4 times higher than that of its un-oriented thin film devices.
authors.affiliation: State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China. renzj@mail.buct.edu.cn.
authors.forename: Lili
authors.initials: L
authors.lastname: Liu
authors.forename: Zhongjie
authors.initials: Z
authors.lastname: Ren
authors.forename: Chengyi
authors.initials: C
authors.lastname: Xiao
authors.forename: Bing
authors.initials: B
authors.lastname: He
authors.forename: Huanli
authors.initials: H
authors.lastname: Dong
authors.forename: Shouke
authors.initials: S
authors.lastname: Yan
authors.forename: Wenping
authors.initials: W
authors.lastname: Hu
authors.forename: Zhaohui
authors.initials: Z
authors.lastname: Wang