title: Full Electroresistance Modulation in a Mixed-Phase Metallic Alloy.
abstract: We report a giant, ∼22%, electroresistance modulation for a metallic alloy above room temperature. It is achieved by a small electric field of 2  kV/cm via piezoelectric strain-mediated magnetoelectric coupling and the resulting magnetic phase transition in epitaxial FeRh/BaTiO_{3} heterostructures. This work presents detailed experimental evidence for an isothermal magnetic phase transition driven by tetragonality modulation in FeRh thin films, which is in contrast to the large volume expansion in the conventional temperature-driven magnetic phase transition in FeRh. Moreover, all the experimental results in this work illustrate FeRh as a mixed-phase model system well similar to phase-separated colossal magnetoresistance systems with phase instability therein.
authors.affiliation: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.|Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.
authors.forename: Z Q
authors.initials: ZQ
authors.lastname: Liu
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: L
authors.initials: L
authors.lastname: Li
authors.affiliation: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: Z
authors.initials: Z
authors.lastname: Gai
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.
authors.forename: J D
authors.initials: JD
authors.lastname: Clarkson
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.
authors.forename: S L
authors.initials: SL
authors.lastname: Hsu
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.|Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA.
authors.forename: A T
authors.initials: AT
authors.lastname: Wong
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: L S
authors.initials: LS
authors.lastname: Fan
authors.affiliation: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: M-W
authors.initials: MW
authors.lastname: Lin
authors.affiliation: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: C M
authors.initials: CM
authors.lastname: Rouleau
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: T Z
authors.initials: TZ
authors.lastname: Ward
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: H N
authors.initials: HN
authors.lastname: Lee
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: A S
authors.initials: AS
authors.lastname: Sefat
authors.affiliation: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: H M
authors.initials: HM
authors.lastname: Christen
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.|Department of Physics, University of California, Berkeley, California 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.|Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: R
authors.initials: R
authors.lastname: Ramesh