title: Crossbar Nanoscale HfO2-Based Electronic Synapses.
abstract: Crossbar resistive switching devices down to 40 × 40 nm(2) in size comprising 3-nm-thick HfO2 layers are forming-free and exhibit up to 10(5) switching cycles. Four-nanometer-thick devices display the ability of gradual switching in both directions, thus emulating long-term potentiation/depression properties akin to biological synapses. Both forming-free and gradual switching properties are modeled in terms of oxygen vacancy generation in an ultrathin HfO2 layer. By applying the voltage pulses to the opposite electrodes of nanodevices with the shape emulating spikes in biological neurons, spike-timing-dependent plasticity functionality is demonstrated. Thus, the fabricated memristors in crossbar geometry are promising candidates for hardware implementation of hybrid CMOS-neuron/memristor-synapse neural networks.
authors.affiliation: Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia. matveyev.ya@mipt.ru.
authors.forename: Yury
authors.identifier: http://orcid.org/0000-0001-7661-8462
authors.initials: Y
authors.lastname: Matveyev
authors.affiliation: Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia.
authors.forename: Roman
authors.initials: R
authors.lastname: Kirtaev
authors.affiliation: Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia.
authors.forename: Alena
authors.initials: A
authors.lastname: Fetisova
authors.affiliation: Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia.
authors.forename: Sergey
authors.initials: S
authors.lastname: Zakharchenko
authors.affiliation: Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia.
authors.forename: Dmitry
authors.initials: D
authors.lastname: Negrov
authors.affiliation: Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia.
authors.forename: Andrey
authors.initials: A
authors.lastname: Zenkevich
keywords: Crossbar; Electronic synapse; HfO2; Memristor; Resistive switching; STDP