title: Transparent megahertz circuits from solution-processed composite thin films.
abstract: Solution-processed amorphous oxide semiconductors have attracted considerable interest in large-area transparent electronics. However, due to its relative low carrier mobility (∼10 cm(2) V(-1) s(-1)), the demonstrated circuit performance has been limited to 800 kHz or less. Herein, we report solution-processed high-speed thin-film transistors (TFTs) and integrated circuits with an operation frequency beyond the megahertz region on 4 inch glass. The TFTs can be fabricated from an amorphous indium gallium zinc oxide/single-walled carbon nanotube (a-IGZO/SWNT) composite thin film with high yield and high carrier mobility of >70 cm(2) V(-1) s(-1). On-chip microwave measurements demonstrate that these TFTs can deliver an unprecedented operation frequency in solution-processed semiconductors, including an extrinsic cut-off frequency (f(T) = 102 MHz) and a maximum oscillation frequency (f(max) = 122 MHz). Ring oscillators further demonstrated an oscillation frequency of 4.13 MHz, for the first time, realizing megahertz circuit operation from solution-processed semiconductors. Our studies represent an important step toward high-speed solution-processed thin film electronics.
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China. liaolei@whu.edu.cn.
authors.forename: Xingqiang
authors.initials: X
authors.lastname: Liu
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China. liaolei@whu.edu.cn.
authors.forename: Da
authors.initials: D
authors.lastname: Wan
authors.affiliation: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute, Nanjing 210016, China.
authors.forename: Yun
authors.initials: Y
authors.lastname: Wu
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China. liaolei@whu.edu.cn.
authors.forename: Xiangheng
authors.initials: X
authors.lastname: Xiao
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China. liaolei@whu.edu.cn.
authors.forename: Shishang
authors.initials: S
authors.lastname: Guo
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China. liaolei@whu.edu.cn.
authors.forename: Changzhong
authors.initials: C
authors.lastname: Jiang
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China. liaolei@whu.edu.cn.
authors.forename: Jinchai
authors.initials: J
authors.lastname: Li
authors.affiliation: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute, Nanjing 210016, China.
authors.forename: Tangsheng
authors.initials: T
authors.lastname: Chen
authors.affiliation: Department of Chemistry and Biochemistry, University of California, Los Angeles, CA 90095, USA.
authors.forename: Xiangfeng
authors.initials: X
authors.lastname: Duan
authors.affiliation: Department of Electronic & Computer Engineering, The Hong Kong University of Science & Technology, Hong Kong SAR, China.
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Fan
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China. liaolei@whu.edu.cn.
authors.forename: Lei
authors.initials: L
authors.lastname: Liao