title: High-performance integrated field-effect transistor-based sensors.
abstract: Field-effect transistors (FETs) have succeeded in modern electronics in an era of computers and hand-held applications. Currently, considerable attention has been paid to direct electrical measurements, which work by monitoring changes in intrinsic electrical properties. Further, FET-based sensing systems drastically reduce cost, are compatible with CMOS technology, and ease down-stream applications. Current technologies for sensing applications rely on time-consuming strategies and processes and can only be performed under recommended conditions. To overcome these obstacles, an overview is presented here in which we specifically focus on high-performance FET-based sensor integration with nano-sized materials, which requires understanding the interaction of surface materials with the surrounding environment. Therefore, we present strategies, material depositions, device structures and other characteristics involved in FET-based devices. Special attention was given to silicon and polyaniline nanowires and graphene, which have attracted much interest due to their remarkable properties in sensing applications.
authors.affiliation: Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis, Malaysia. Electronic address: adzhri@gmail.com.
authors.forename: R
authors.initials: R
authors.lastname: Adzhri
authors.affiliation: Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis, Malaysia; School of Microelectronic Engineering (SoME), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis, Malaysia. Electronic address: mohd.khairuddin@unimap.edu.my.
authors.forename: M K
authors.initials: MK
authors.lastname: Md Arshad
authors.affiliation: Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis, Malaysia; School of Bioprocess Engineering (SBE), Universiti Malaysia Perlis (UniMAP), Arau, Perlis, Malaysia. Electronic address: subash@unimap.edu.my.
authors.forename: Subash C B
authors.initials: SC
authors.lastname: Gopinath
authors.affiliation: Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis, Malaysia. Electronic address: ruslinda@unimap.edu.my.
authors.forename: A R
authors.initials: AR
authors.lastname: Ruslinda
authors.affiliation: Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis, Malaysia. Electronic address: faris.fathil@gmail.com.
authors.forename: M F M
authors.initials: MF
authors.lastname: Fathil
authors.affiliation: Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis, Malaysia. Electronic address: ramzan@unimap.edu.my.
authors.forename: R M
authors.initials: RM
authors.lastname: Ayub
authors.affiliation: Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis, Malaysia. Electronic address: m.nuzaihan@unimap.edu.my.
authors.forename: M Nuzaihan Mohd
authors.initials: MN
authors.lastname: Nor
authors.affiliation: Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis, Malaysia. Electronic address: chvoon@unimap.edu.my.
authors.forename: C H
authors.initials: CH
authors.lastname: Voon
keywords: Field-effect transistor; Graphene; Nano-sized materials; Nanowire; Polyaniline; Silicon