title: Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing.
abstract: We analyse the effects of substrate polishing and of the epilayer thickness on the quality of graphene layers grown by high temperature annealing on 3C-SiC(111)/Si(111) by scanning tunnelling microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, low energy electron diffraction and high resolution angle resolved photoemission spectroscopy. The results provide a comprehensive set of data confirming the superior quality of the graphene layers obtained on polished substrates, and the limitations of the growth obtained on unpolished surfaces.
authors.affiliation: School of Chemistry, Physics and Mechanical Engineering and Institute for Future Environments, Queensland University of Technology, 2 George Street, Brisbane 4001, QLD, Australia.
authors.forename: B
authors.initials: B
authors.lastname: Gupta
authors.forename: I
authors.initials: I
authors.lastname: Di Bernardo
authors.forename: P
authors.initials: P
authors.lastname: Mondelli
authors.forename: A
authors.initials: A
authors.lastname: Della Pia
authors.forename: M G
authors.initials: MG
authors.lastname: Betti
authors.forename: F
authors.initials: F
authors.lastname: Iacopi
authors.forename: C
authors.initials: C
authors.lastname: Mariani
authors.forename: N
authors.initials: N
authors.lastname: Motta