title: Effect of Electronegativity on Bipolar Resistive Switching in a WO3-Based Asymmetric Capacitor Structure.
abstract: This study investigates the transport and switching time of nonvolatile tungsten oxide based resistive-switching (RS) memory devices. These devices consist of a highly resistive tungsten oxide film sandwiched between metal electrodes, and their RS characteristics are bipolar in the counterclockwise direction. The switching voltage, retention, endurance, and switching time are strongly dependent on the type of electrodes used, and we also find quantitative and qualitative evidence that the electronegativity (χ) of the electrodes plays a key role in determining the RS properties and switching time. We also propose an RS model based on the role of the electronegativity at the interface.
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University , Seoul 100-715, Korea.
authors.forename: Jongmin
authors.initials: J
authors.lastname: Kim
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University , Seoul 100-715, Korea.
authors.forename: Akbar I
authors.initials: AI
authors.lastname: Inamdar
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University , Seoul 100-715, Korea.
authors.forename: Yongcheol
authors.initials: Y
authors.lastname: Jo
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University , Seoul 100-715, Korea.
authors.forename: Hyeonseok
authors.initials: H
authors.lastname: Woo
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University , Seoul 100-715, Korea.
authors.forename: Sangeun
authors.initials: S
authors.lastname: Cho
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University , Seoul 100-715, Korea.
authors.forename: Sambhaji M
authors.initials: SM
authors.lastname: Pawar
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University , Seoul 100-715, Korea.
authors.forename: Hyungsang
authors.initials: H
authors.lastname: Kim
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University , Seoul 100-715, Korea.
authors.forename: Hyunsik
authors.initials: H
authors.lastname: Im
keywords: electronegativity; oxygen ion migration; resistive switching; switching time; tungsten oxide