title: Physically Transient Resistive Switching Memory Based on Silk Protein.
abstract: Physically transient resistive switching devices based on silk protein are successfully demonstrated. The devices can be absolutely dissolved in deionized water or in phosphate-buffered saline in 2 h. At the same time, a reasonable resistance OFF/ON ratio of larger than 10(2) and a retention time of more than 10(4) s are achieved for nonvolatile memory applications.
authors.affiliation: School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China.|School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798.
authors.forename: Hong
authors.initials: H
authors.lastname: Wang
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798.
authors.forename: Bowen
authors.initials: B
authors.lastname: Zhu
authors.affiliation: School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China.
authors.forename: Xiaohua
authors.initials: X
authors.lastname: Ma
authors.affiliation: School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China.
authors.forename: Yue
authors.initials: Y
authors.lastname: Hao
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798.
authors.forename: Xiaodong
authors.initials: X
authors.lastname: Chen
mesh_terms: D004581:Electronics / Q000379:methods*; D005349:Fibroins / Q000737:chemistry; D036103:Nanotechnology / Q000379:methods*; D047011:Silk / Q000737:chemistry*
chemical_list: D047011:Silk; D005349:Fibroins
keywords: memory; proteins; resistive switching; transient electronics