title: Hysteresis in Carbon Nanotube Transistors: Measurement and Analysis of Trap Density, Energy Level, and Spatial Distribution.
abstract: We present a measurement technique, which we call the Pulsed Time-Domain Measurement, for characterizing hysteresis in carbon nanotube field-effect transistors, and demonstrate its applicability for a broad range of 1D and 2D nanomaterials beyond carbon nanotubes. The Pulsed Time-Domain Measurement enables the quantification (density, energy level, and spatial distribution) of charged traps responsible for hysteresis. A physics-based model of the charge trapping process for a carbon nanotube field-effect transistor is presented and experimentally validated using the Pulsed Time-Domain Measurement. Leveraging this model, we discover a source of traps (surface traps) unique to devices with low-dimensional channels such as carbon nanotubes and nanowires (beyond interface traps which exist in today's silicon field-effect transistors). The different charge trapping mechanisms for interface traps and surface traps are studied based on their temperature dependencies. Through these advances, we are able to quantify the interface trap density for carbon nanotube field-effect transistors (∼3 × 10(13) cm(-2) eV(-1) near midgap), and compare this against a range of previously studied dielectric/semiconductor interfaces.
authors.affiliation: Department of Electrical Engineering and Stanford SystemX Alliance, Stanford University , Stanford, California 94305, United States.
authors.forename: Rebecca Sejung
authors.initials: RS
authors.lastname: Park
authors.affiliation: Department of Electrical Engineering and Stanford SystemX Alliance, Stanford University , Stanford, California 94305, United States.
authors.forename: Max Marcel
authors.initials: MM
authors.lastname: Shulaker
authors.affiliation: Department of Electrical Engineering and Stanford SystemX Alliance, Stanford University , Stanford, California 94305, United States.
authors.forename: Gage
authors.initials: G
authors.lastname: Hills
authors.affiliation: Department of Electrical Engineering and Stanford SystemX Alliance, Stanford University , Stanford, California 94305, United States.
authors.forename: Luckshitha
authors.initials: L
authors.lastname: Suriyasena Liyanage
authors.affiliation: Department of Electrical Engineering and Stanford SystemX Alliance, Stanford University , Stanford, California 94305, United States.
authors.forename: Seunghyun
authors.initials: S
authors.lastname: Lee
authors.affiliation: Department of Electrical Engineering and Stanford SystemX Alliance, Stanford University , Stanford, California 94305, United States.
authors.forename: Alvin
authors.initials: A
authors.lastname: Tang
authors.affiliation: Department of Electrical Engineering and Stanford SystemX Alliance, Stanford University , Stanford, California 94305, United States.|Department of Computer Science, Stanford University , Stanford, California 94305, United States.
authors.forename: Subhasish
authors.initials: S
authors.lastname: Mitra
authors.affiliation: Department of Electrical Engineering and Stanford SystemX Alliance, Stanford University , Stanford, California 94305, United States.
authors.forename: H-S Philip
authors.initials: HS
authors.lastname: Wong
keywords: CNFET; CNT; carbon nanotube; hysteresis; traps