title: Sub-10 nm feature chromium photomasks for contact lithography patterning of square metal ring arrays.
abstract: Advances in photolithographic processes have allowed semiconductor industries to manufacture smaller and denser chips. As the feature size of integrated circuits becomes smaller, there has been a growing need for a photomask embedded with ever narrower patterns. However, it is challenging for electron beam lithography to obtain <10 nm linewidths with wafer scale uniformity and a necessary speed. Here, we introduce a photolithography-based, cost-effective mask fabrication method based on atomic layer deposition and overhang structures for sacrificial layers. Using this method, we obtained sub-10 nm square ring arrays of side length 50 μm, and periodicity 100 μm on chromium film, on 1 cm by 1 cm quartz substrate. These patterns were then used as a contact-lithography photomask using 365 nm I-line, to generate metal ring arrays on silicon substrate.
authors.affiliation: Department of Physics and Astronomy and Center for Atom Scale Electromagnetism, Seoul National University, Seoul 151-747, Korea.
authors.forename: Woongkyu
authors.initials: W
authors.lastname: Park
authors.affiliation: Department of Physics and Astronomy and Center for Atom Scale Electromagnetism, Seoul National University, Seoul 151-747, Korea.
authors.forename: Jiyeah
authors.initials: J
authors.lastname: Rhie
authors.affiliation: Department of Physics and Astronomy and Center for Atom Scale Electromagnetism, Seoul National University, Seoul 151-747, Korea.
authors.forename: Na Yeon
authors.initials: NY
authors.lastname: Kim
authors.affiliation: Department of Physics and Astronomy, Department of Biophysics and Chemical Biology, and Institute of Applied Physics, Seoul National University, Seoul 151-747, Korea.
authors.forename: Seunghun
authors.initials: S
authors.lastname: Hong
authors.affiliation: Department of Physics and Astronomy and Center for Atom Scale Electromagnetism, Seoul National University, Seoul 151-747, Korea.
authors.forename: Dai-Sik
authors.initials: DS
authors.lastname: Kim