title: Electrically tunable terahertz metamaterials with embedded large-area transparent thin-film transistor arrays.
abstract: Engineering metamaterials with tunable resonances are of great importance for improving the functionality and flexibility of terahertz (THz) systems. An ongoing challenge in THz science and technology is to create large-area active metamaterials as building blocks to enable efficient and precise control of THz signals. Here, an active metamaterial device based on enhancement-mode transparent amorphous oxide thin-film transistor arrays for THz modulation is demonstrated. Analytical modelling based on full-wave techniques and multipole theory exhibits excellent consistent with the experimental observations and reveals that the intrinsic resonance mode at 0.75 THz is dominated by an electric response. The resonant behavior can be effectively tuned by controlling the channel conductivity through an external bias. Such metal/oxide thin-film transistor based controllable metamaterials are energy saving, low cost, large area and ready for mass-production, which are expected to be widely used in future THz imaging, sensing, communications and other applications.
authors.affiliation: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.|Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Acton, ACT 2601, Australia.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Wei-Zong
authors.initials: WZ
authors.lastname: Xu
authors.affiliation: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.|Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Acton, ACT 2601, Australia.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Fang-Fang
authors.initials: FF
authors.lastname: Ren
authors.affiliation: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.|Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Acton, ACT 2601, Australia.
authors.forename: Jiandong
authors.initials: J
authors.lastname: Ye
authors.affiliation: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Hai
authors.initials: H
authors.lastname: Lu
authors.affiliation: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
authors.forename: Lanju
authors.initials: L
authors.lastname: Liang
authors.affiliation: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Xiaoming
authors.initials: X
authors.lastname: Huang
authors.affiliation: Nonlinear Physics Centre, Research School of Physics and Engineering, The Australian National University, Acton, ACT 2601, Australia.
authors.forename: Mingkai
authors.initials: M
authors.lastname: Liu
authors.affiliation: Nonlinear Physics Centre, Research School of Physics and Engineering, The Australian National University, Acton, ACT 2601, Australia.
authors.forename: Ilya V
authors.initials: IV
authors.lastname: Shadrivov
authors.affiliation: Nonlinear Physics Centre, Research School of Physics and Engineering, The Australian National University, Acton, ACT 2601, Australia.
authors.forename: David A
authors.initials: DA
authors.lastname: Powell
authors.affiliation: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Guang
authors.initials: G
authors.lastname: Yu
authors.affiliation: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
authors.forename: Biaobing
authors.initials: B
authors.lastname: Jin
authors.affiliation: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
authors.forename: Rong
authors.initials: R
authors.lastname: Zhang
authors.affiliation: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
authors.forename: Youdou
authors.initials: Y
authors.lastname: Zheng
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Acton, ACT 2601, Australia.
authors.forename: Hark Hoe
authors.initials: HH
authors.lastname: Tan
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Acton, ACT 2601, Australia.
authors.forename: Chennupati
authors.initials: C
authors.lastname: Jagadish