title: Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers.
abstract: Complementary inverters constructed from large-area monolayers of WSe2 and MoS2 achieve excellent logic swings and yield an extremely high gain, large total noise margin, low power consumption, and good switching speed. Moreover, the WSe2 complementary-like inverters built on plastic substrates exhibit high mechanical stability. The results provide a path toward large-area flexible electronics.
authors.affiliation: Department of Advanced Science and Engineering, Waseda University, Tokyo, 169-8555, Japan.
authors.forename: Jiang
authors.initials: J
authors.lastname: Pu
authors.affiliation: Department of Advanced Science and Engineering, Waseda University, Tokyo, 169-8555, Japan.
authors.forename: Kazuma
authors.initials: K
authors.lastname: Funahashi
authors.affiliation: Department of Automatic Control Engineering, Feng Chia University, Taichung, 40724, Taiwan.
authors.forename: Chang-Hsiao
authors.initials: CH
authors.lastname: Chen
authors.affiliation: Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.|Research Center for Applied Sciences, Academia Sinica, Taipei, 10617, Taiwan.
authors.forename: Ming-Yang
authors.initials: MY
authors.lastname: Li
authors.affiliation: Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Lain-Jong
authors.initials: LJ
authors.lastname: Li
authors.affiliation: Department of Advanced Science and Engineering, Waseda University, Tokyo, 169-8555, Japan.|Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Tokyo, 169-0051, Japan.
authors.forename: Taishi
authors.initials: T
authors.lastname: Takenobu
keywords: CMOS inverters; chemical vapor deposition; electric double layer transistors; flexible electronics; transition metal dichalcogenide monolayers