title: Carrier Multiplication in a Single Semiconductor Nanocrystal.
abstract: To confirm the existence of the carrier multiplication (CM) effect and estimate its generation efficiency of multiple excitons in semiconductor nanocrystals (NCs), it is imperative to completely exclude the false contribution of charged excitons from the measured CM signal. Here we place single CdSe NCs above an aluminum film and successfully resolve their UV-excited photoluminescence (PL) time trajectories where the true and false CM signals are contained in the blinking "on" and "off" levels, respectively. By analyzing the PL dynamics of the on-level photons, an average CM efficiency of ∼20.2% can be reliably estimated when the UV photon energy is ∼2.46 times the NC energy gap.
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Fengrui
authors.initials: F
authors.lastname: Hu
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Bihu
authors.initials: B
authors.lastname: Lv
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Chunyang
authors.initials: C
authors.lastname: Yin
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Chunfeng
authors.initials: C
authors.lastname: Zhang
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Xiaoyong
authors.initials: X
authors.lastname: Wang
authors.affiliation: Laboratoire Photonique Numérique et Nanosciences, Université de Bordeaux, Institut d'Optique Graduate School and CNRS, Talence 33405, France.
authors.forename: Brahim
authors.initials: B
authors.lastname: Lounis
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.|Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA.
authors.forename: Min
authors.initials: M
authors.lastname: Xiao