title: Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth.
abstract: Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice-matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-exfoliated flakes WS2 and MoS2 by metalorganic vapour phase epitaxy. Structural and optical characterization show that strain-free, single-crystal islands of GaN are obtained on the underlying chalcogenide flakes. We obtain strong near-band-edge emission from these layers, and analyse their temperature-dependent photoluminescence properties. We also report a proof-of-concept demonstration of large-area growth of GaN on CVD MoS2. Our results show that the transition-metal dichalcogenides can serve as novel near-lattice-matched substrates for nitride growth.
authors.affiliation: Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India.
authors.forename: Priti
authors.initials: P
authors.lastname: Gupta
authors.affiliation: Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India.
authors.forename: A A
authors.initials: AA
authors.lastname: Rahman
authors.affiliation: Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India.
authors.forename: Shruti
authors.initials: S
authors.lastname: Subramanian
authors.affiliation: Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India.|UM-DAE Center for Excellence in Basic Sciences, Mumbai, India.
authors.forename: Shalini
authors.initials: S
authors.lastname: Gupta
authors.affiliation: Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India.
authors.forename: Arumugam
authors.initials: A
authors.lastname: Thamizhavel
authors.affiliation: Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA.
authors.forename: Tatyana
authors.initials: T
authors.lastname: Orlova
authors.affiliation: Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA.
authors.forename: Sergei
authors.initials: S
authors.lastname: Rouvimov
authors.affiliation: Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA.
authors.forename: Suresh
authors.initials: S
authors.lastname: Vishwanath
authors.affiliation: Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA.
authors.forename: Vladimir
authors.initials: V
authors.lastname: Protasenko
authors.affiliation: Department of Chemical and Biological Engineering, University of Wisconsin-Madison, USA.
authors.forename: Masihhur R
authors.initials: MR
authors.lastname: Laskar
authors.affiliation: Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA.
authors.forename: Huili Grace
authors.initials: HG
authors.lastname: Xing
authors.affiliation: Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA.
authors.forename: Debdeep
authors.initials: D
authors.lastname: Jena
authors.affiliation: Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India.
authors.forename: Arnab
authors.initials: A
authors.lastname: Bhattacharya