title: Laser Direct Writing Process for Making Electrodes and High-k Sol-Gel ZrO2 for Boosting Performances of MoS2 Transistors.
abstract: A series of two-dimensional (2D) transition metal dichalcogenides (TMDCs), including molybdenum disulfide (MoS2), can be attractive materials for photonic and electronic applications due to their exceptional properties. Among these unique properties, high mobility of 2D TMDCs enables realization of high-performance nanoelectronics based on a thin film transistor (TFT) platform. In this contribution, we report highly enhanced field effect mobility (μ(eff) = 50.1 cm(2)/(V s), ∼2.5 times) of MoS2 TFTs through the sol-gel processed high-k ZrO2 (∼22.0) insulator, compared to those of typical MoS2/SiO2/Si structures (μ(eff) = 19.4 cm(2)/(V s)) because a high-k dielectric layer can suppress Coulomb electron scattering and reduce interface trap concentration. Additionally, in order to avoid costly conventional mask based photolithography and define the patterns, we employ a simple laser direct writing (LDW) process. This process allows precise and flexible control with reasonable resolution (up to ∼10 nm), depending on the system, and enables fabrication of arbitrarily patterned devices. Taking advantage of continuing developments in laser technology offers a substantial cost decrease, and LDW may emerge as a promising technology.
authors.affiliation: Department of Mechanical Engineering, University of California, Berkeley , Berkeley, California 94720-1740, United States.
authors.forename: Hyuk-Jun
authors.initials: HJ
authors.lastname: Kwon
authors.affiliation: School of Electronics Engineering, Kyungpook National University , Daegu 702-701, Korea.
authors.forename: Jaewon
authors.initials: J
authors.lastname: Jang
authors.affiliation: Department of Mechanical Engineering, University of California, Berkeley , Berkeley, California 94720-1740, United States.
authors.forename: Costas P
authors.initials: CP
authors.lastname: Grigoropoulos
keywords: MoS2; coulomb electron scattering; interface trap; laser direct writing; sol−gel high-k ZrO2; thin-film transistors