title: Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions.
abstract: Perpendicular magnetic tunnel junctions (p-MTJs) were patterned into nanopillars using electron-beam lithography to study their scaling and switching behaviour. Magnetoresistance measurements of annealed and unannealed p-MTJ films using scanning probe microscopy showed good agreement with Monte Carlo modeling. p-MTJ pillars demonstrated clear parallel magnetic states, both 'up' or both 'down' following AC-demagnetization. Significant variability in the resistance of p-MTJ pillars was observed and attributed to edge features generated during patterning or local inhomogeneity in the MgO layer.
authors.affiliation: Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
authors.forename: Larysa
authors.initials: L
authors.lastname: Tryputen
authors.forename: Kun-Hua
authors.initials: KH
authors.lastname: Tu
authors.forename: Stephan K
authors.initials: SK
authors.lastname: Piotrowski
authors.forename: Mukund
authors.initials: M
authors.lastname: Bapna
authors.forename: Sara A
authors.initials: SA
authors.lastname: Majetich
authors.forename: Congli
authors.initials: C
authors.lastname: Sun
authors.forename: Paul M
authors.initials: PM
authors.lastname: Voyles
authors.forename: Hamid
authors.initials: H
authors.lastname: Almasi
authors.forename: Weigang
authors.initials: W
authors.lastname: Wang
authors.forename: Patricio
authors.initials: P
authors.lastname: Vargas
authors.forename: Jason S
authors.initials: JS
authors.lastname: Tresback
authors.forename: Caroline A
authors.initials: CA
authors.lastname: Ross