title: P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas.
abstract: The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of -2 V and drain bias of -15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm(2)/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG.
authors.affiliation: International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Kexiong
authors.initials: K
authors.lastname: Zhang
authors.affiliation: Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Masatomo
authors.initials: M
authors.lastname: Sumiya
authors.affiliation: Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Meiyong
authors.initials: M
authors.lastname: Liao
authors.affiliation: Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Yasuo
authors.initials: Y
authors.lastname: Koide
authors.affiliation: International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.|JST-PRESTO, The Japan Science and Technology Agency, Tokyo 102-0076, Japan.
authors.forename: Liwen
authors.initials: L
authors.lastname: Sang