title: Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor.
abstract: The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and electrical properties of bulk ferroelectrics are degraded when the ferroelectric is processed into thin films because the grain boundaries then form randomly. Controlling the nature of nucleation and growth are the keys to achieving a good crystalline thin-film. However, the sought after high-quality ferroelectric thin-film has so far been thought to be impossible to make, and research has been restricted to atomic-layer deposition which is extremely expensive and has poor reproducibility. Here we demonstrate a novel epitaxial-like growth technique to achieve extremely uniform and large rectangular-shaped grains in thin-film ferroelectrics by dividing the nucleation and growth phases. With this technique, it is possible to achieve 100-μm large uniform grains, even made available on Si, which is large enough to fabricate a field-effect transistor in each grain. The electrical and reliability test results, including endurance and retention test results, were superior to other FeRAMs reported so far and thus the results presented here constitute the first step toward the development of FeRAM using epitaxial-like ferroelectric thin-films.
authors.affiliation: Department of Material Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea.|Eui-San Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.
authors.forename: Jae Hyo
authors.initials: JH
authors.lastname: Park
authors.affiliation: Department of Material Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea.|Eui-San Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.
authors.forename: Hyung Yoon
authors.initials: HY
authors.lastname: Kim
authors.affiliation: Department of Material Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea.|Eui-San Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.
authors.forename: Gil Su
authors.initials: GS
authors.lastname: Jang
authors.affiliation: Department of Material Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea.|Eui-San Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.
authors.forename: Ki Hwan
authors.initials: KH
authors.lastname: Seok
authors.affiliation: Department of Material Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea.|Eui-San Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.
authors.forename: Hee Jae
authors.initials: HJ
authors.lastname: Chae
authors.affiliation: Department of Material Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea.|Eui-San Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.
authors.forename: Sol Kyu
authors.initials: SK
authors.lastname: Lee
authors.affiliation: Department of Material Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea.|Eui-San Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.
authors.forename: Zohreh
authors.initials: Z
authors.lastname: Kiaee
authors.affiliation: Department of Material Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea.|Eui-San Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.
authors.forename: Seung Ki
authors.initials: SK
authors.lastname: Joo