title: Strong interfacial exchange field in the graphene/EuS heterostructure.
abstract: Exploiting 2D materials for spintronic applications can potentially realize next-generation devices featuring low power consumption and quantum operation capability. The magnetic exchange field (MEF) induced by an adjacent magnetic insulator enables efficient control of local spin generation and spin modulation in 2D devices without compromising the delicate material structures. Using graphene as a prototypical 2D system, we demonstrate that its coupling to the model magnetic insulator (EuS) produces a substantial MEF (>14 T) with the potential to reach hundreds of tesla, which leads to orders-of-magnitude enhancement of the spin signal originating from the Zeeman spin Hall effect. Furthermore, the new ferromagnetic ground state of Dirac electrons resulting from the strong MEF may give rise to quantized spin-polarized edge transport. The MEF effect shown in our graphene/EuS devices therefore provides a key functionality for future spin logic and memory devices based on emerging 2D materials in classical and quantum information processing.
authors.affiliation: Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.|Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
authors.forename: Peng
authors.identifier: 0000-0003-2289-6007
authors.initials: P
authors.lastname: Wei
authors.affiliation: IBM TJ Watson Research Center, Yorktown Heights, New York 10598, USA.|Electrical Engineering Department, Columbia University, New York, New York 10027, USA.
authors.forename: Sunwoo
authors.identifier: 0000-0002-9750-7224
authors.initials: S
authors.lastname: Lee
authors.affiliation: IBM TJ Watson Research Center, Yorktown Heights, New York 10598, USA.|Institut polytechnique de Grenoble, F38031 Grenoble Cedex 1, France.
authors.forename: Florian
authors.initials: F
authors.lastname: Lemaitre
authors.affiliation: IBM TJ Watson Research Center, Yorktown Heights, New York 10598, USA.|Institut polytechnique de Grenoble, F38031 Grenoble Cedex 1, France.
authors.forename: Lucas
authors.identifier: 0000-0001-8603-5631
authors.initials: L
authors.lastname: Pinel
authors.affiliation: IBM TJ Watson Research Center, Yorktown Heights, New York 10598, USA.|IBM Zurich Research Laboratory, Säumerstrasse 4, CH- 8803 Rüschlikon, Switzerland.
authors.forename: Davide
authors.initials: D
authors.lastname: Cutaia
authors.affiliation: Mechanical Engineering Department, Columbia University, New York, New York 10027, USA.
authors.forename: Wujoon
authors.initials: W
authors.lastname: Cha
authors.affiliation: Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.|Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
authors.forename: Ferhat
authors.initials: F
authors.lastname: Katmis
authors.affiliation: IBM TJ Watson Research Center, Yorktown Heights, New York 10598, USA.
authors.forename: Yu
authors.initials: Y
authors.lastname: Zhu
authors.affiliation: Department of Physics, Northeastern University, Boston, Massachusetts 02115, USA.
authors.forename: Donald
authors.initials: D
authors.lastname: Heiman
authors.affiliation: Mechanical Engineering Department, Columbia University, New York, New York 10027, USA.
authors.forename: James
authors.initials: J
authors.lastname: Hone
authors.affiliation: Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.|Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
authors.forename: Jagadeesh S
authors.initials: JS
authors.lastname: Moodera
authors.affiliation: IBM TJ Watson Research Center, Yorktown Heights, New York 10598, USA.
authors.forename: Ching-Tzu
authors.initials: CT
authors.lastname: Chen