title: Patterned Formation of Highly Coherent Nitrogen-Vacancy Centers Using a Focused Electron Irradiation Technique.
abstract: We demonstrate fully three-dimensional and patterned localization of nitrogen-vacancy (NV) centers in diamond with coherence times in excess of 1 ms. Nitrogen δ-doping during chemical vapor deposition diamond growth vertically confines nitrogen to 4 nm while electron irradiation with a transmission electron microscope laterally confines vacancies to less than 450 nm. We characterize the effects of electron energy and dose on NV formation. Importantly, our technique enables the formation of reliably high-quality NV centers inside diamond nanostructures with applications in quantum information and sensing.
authors.forename: Claire A
authors.initials: CA
authors.lastname: McLellan
authors.forename: Bryan A
authors.initials: BA
authors.lastname: Myers
authors.forename: Stephan
authors.initials: S
authors.lastname: Kraemer
authors.affiliation: Institute for Molecular Engineering, University of Chicago , Chicago, Illinois 60637, United States.
authors.forename: Kenichi
authors.initials: K
authors.lastname: Ohno
authors.affiliation: Institute for Molecular Engineering, University of Chicago , Chicago, Illinois 60637, United States.
authors.forename: David D
authors.initials: DD
authors.lastname: Awschalom
authors.forename: Ania C
authors.initials: AC
authors.lastname: Bleszynski Jayich
keywords: Nitrogen-vacancy center; diamond; quantum coherence; transmission electron microscopy