title: Indium Antimonide Nanowires: Synthesis and Properties.
abstract: This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs) growth and their potential applications in the industry. In the first section, historical studies on the growth of InSb NWs have been presented, while in the second part, a comprehensive overview of the various synthesis techniques is demonstrated briefly. The major emphasis of current review is vapor phase deposition of NWs by manifold techniques. In addition, author review various protocols and methodologies employed to generate NWs from diverse material systems via self-organized fabrication procedures comprising chemical vapor deposition, annealing in reactive atmosphere, evaporation of InSb, molecular/ chemical beam epitaxy, solution-based techniques, and top-down fabrication method. The benefits and ill effects of the gold and self-catalyzed materials for the growth of NWs are explained at length. Afterward, in the next part, four thermodynamic characteristics of NW growth criterion concerning the expansion of NWs, growth velocity, Gibbs-Thomson effect, and growth model were expounded and discussed concisely. Recent progress in device fabrications is explained in the third part, in which the electrical and optical properties of InSb NWs were reviewed by considering the effects of conductivity which are diameter dependent and the applications of NWs in the fabrications of field-effect transistors, quantum devices, thermoelectrics, and detectors.
authors.affiliation: Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China. Shafauaf@yahoo.co.uk.
authors.forename: Muhammad
authors.initials: M
authors.lastname: Shafa
authors.affiliation: Zernike Institute for Advanced Materials, University of Groningen, 9747AG, Groningen, The Netherlands.
authors.forename: Sadaf
authors.initials: S
authors.lastname: Akbar
authors.affiliation: State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Gao
authors.affiliation: Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
authors.forename: Muhammad
authors.initials: M
authors.lastname: Fakhar-E-Alam
authors.affiliation: Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China. zhmwang@uestc.edu.cn.|State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, China. zhmwang@uestc.edu.cn.
authors.forename: Zhiming M
authors.initials: ZM
authors.lastname: Wang
keywords: Applications; Growth parameters; Indium antimonide nanowires (InSb NWs)