title: Coulomb blockade in monolayer MoS2 single electron transistor.
abstract: Substantial effort has been dedicated to understand the intrinsic electronic properties of molybdenum disulfide (MoS2). However, electron transport study on monolayer MoS2 has been challenging to date, especially at low temperatures due to large metal/semiconductor junction barriers. Herein, we report the fabrication and characterization of the monolayer MoS2 single-electron transistor. High performance devices are obtained through the use of low work function metal (zinc) contact and a rapid thermal annealing step. Coulomb blockade is observed at low temperatures and is attributed to single-electron tunneling via two tunnel junction barriers. The nature of Coulomb blockade is also investigated by temperature-dependent conductance oscillation measurement. Our results hold promise for the study of novel quantum transport phenomena in 2D semiconducting atomic layer crystals.
authors.affiliation: Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA. zzhong@umich.edu.
authors.forename: Kyunghoon
authors.initials: K
authors.lastname: Lee
authors.affiliation: Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA. zzhong@umich.edu.
authors.forename: Girish
authors.initials: G
authors.lastname: Kulkarni
authors.affiliation: Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA. zzhong@umich.edu.
authors.forename: Zhaohui
authors.initials: Z
authors.lastname: Zhong