title: Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors.
abstract: In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.
authors.affiliation: School of Electronic Science & Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.|Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences , Ningbo 315201, China.
authors.forename: Chang Jin
authors.initials: CJ
authors.lastname: Wan
authors.affiliation: Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences , Ningbo 315201, China.
authors.forename: Yang Hui
authors.initials: YH
authors.lastname: Liu
authors.affiliation: Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences , Ningbo 315201, China.
authors.forename: Li Qiang
authors.initials: LQ
authors.lastname: Zhu
authors.affiliation: School of Electronic Science & Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
authors.forename: Ping
authors.initials: P
authors.lastname: Feng
authors.affiliation: School of Electronic Science & Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
authors.forename: Yi
authors.initials: Y
authors.lastname: Shi
authors.affiliation: School of Electronic Science & Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.|Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences , Ningbo 315201, China.
authors.forename: Qing
authors.initials: Q
authors.lastname: Wan
mesh_terms: D004560:Electricity; D019706:Excitatory Postsynaptic Potentials / Q000187:drug effects; D005708:Gallium / Q000494:pharmacology*; D007204:Indium / Q000494:pharmacology*; D009473:Neuronal Plasticity / Q000187:drug effects*; D012996:Solutions; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000494:pharmacology*
chemical_list: D012996:Solutions; D007204:Indium; D005708:Gallium; D015034:Zinc Oxide
keywords: artificial synapses; electric-double-layer modulation; neuromorphic systems; solution gated transistors; synaptic plasticity regulation