title: The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices.
abstract: We demonstrate that, in contrast to most two-dimensional materials, ultrathin flakes of InSe are stable under ambient conditions. Despite their ambient stability, InSe-based nanodevices show an environmental p-type doping, suppressed by capping InSe with hexagonal boron nitride. By means of transport experiments, density functional theory and vibrational spectroscopy, we attribute the p-type doping assumed by uncapped InSe under an ambient atmosphere to the decomposition of water at Se vacancies. We have estimated the site-dependent adsorption energy of O2, N2, H2O, CO and CO2 on InSe. A stable adsorption is found only for the case of H2O, with a charge transfer of only 0.01 electrons per water molecule.
authors.affiliation: Università degli Studi della Calabria, Dipartimento di Fisica, 87036 Rende, Italy. antonio.politano@fis.unical.it.
authors.forename: A
authors.initials: A
authors.lastname: Politano
authors.forename: G
authors.initials: G
authors.lastname: Chiarello
authors.forename: R
authors.initials: R
authors.lastname: Samnakay
authors.forename: G
authors.initials: G
authors.lastname: Liu
authors.forename: B
authors.initials: B
authors.lastname: Gürbulak
authors.forename: S
authors.initials: S
authors.lastname: Duman
authors.forename: A A
authors.initials: AA
authors.lastname: Balandin
authors.forename: D W
authors.initials: DW
authors.lastname: Boukhvalov