title: Switching Power Universality in Unipolar Resistive Switching Memories.
abstract: We investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices. To experimentally derive the switching power universality, systematic measurements of the switching voltage and current are performed, and neither of these correlate with one another. As the switching resistance (R) increases, the switching power (P) decreases following a power law P ∝ R(-β), regardless of the device configurations. The observed switching power universality is indicative of the existence of a commonly applicable switching mechanism. The origin of the power universality is discussed based on a metallic filament model and thermo-chemical reaction.
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea.
authors.forename: Jongmin
authors.initials: J
authors.lastname: Kim
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea.|R&D Division, Flash Integration Technology Team, SK-Hynix, 2091 Gyeongchung daero Bubal-eub, Icheon-si Gyeonggi-do, Republic of Korea.
authors.forename: Kyooho
authors.initials: K
authors.lastname: Jung
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea.|LED Product &Technology, LED Business, Samsung Electronics Co., Ltd, San #24 Nongseo-dong, Giheung-gu, Yongin-city, Gyeonggi-do, 446-711, Republic of Korea.
authors.forename: Yongmin
authors.initials: Y
authors.lastname: Kim
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea.
authors.forename: Yongcheol
authors.initials: Y
authors.lastname: Jo
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea.
authors.forename: Sangeun
authors.initials: S
authors.lastname: Cho
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea.
authors.forename: Hyeonseok
authors.initials: H
authors.lastname: Woo
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea.
authors.forename: Seongwoo
authors.initials: S
authors.lastname: Lee
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea.
authors.forename: A I
authors.initials: AI
authors.lastname: Inamdar
authors.affiliation: Department of Physics, Hanyang University, Seoul 133-791, Republic of Korea.
authors.forename: Jinpyo
authors.initials: J
authors.lastname: Hong
authors.affiliation: Center for Opto-Electronic Materials and Devices, Korea Institute Science &Technology (KIST), Seoul 136-791, Republic of Korea.
authors.forename: Jeon-Kook
authors.initials: JK
authors.lastname: Lee
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea.
authors.forename: Hyungsang
authors.initials: H
authors.lastname: Kim
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea.
authors.forename: Hyunsik
authors.initials: H
authors.lastname: Im