title: Giant spin-torque diode sensitivity in the absence of bias magnetic field.
abstract: Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW(-1) at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors.
authors.affiliation: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, China.
authors.forename: Bin
authors.initials: B
authors.lastname: Fang
authors.affiliation: Department of Electrical and Information Engineering, Polytechnic of Bari, Bari 70125, Italy.
authors.forename: Mario
authors.initials: M
authors.lastname: Carpentieri
authors.affiliation: Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA.
authors.forename: Xiaojie
authors.initials: X
authors.lastname: Hao
authors.affiliation: Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA.
authors.forename: Hongwen
authors.initials: H
authors.lastname: Jiang
authors.affiliation: HGST Inc, 3403 Yerba Buena Road, San Jose, California 95135, USA.
authors.forename: Jordan A
authors.initials: JA
authors.lastname: Katine
authors.affiliation: Department of Physics and Astronomy, University of California, Irvine, California 92697, USA.
authors.forename: Ilya N
authors.initials: IN
authors.lastname: Krivorotov
authors.affiliation: Singulus Technologies, Kahl am Main 63796, Germany.
authors.forename: Berthold
authors.initials: B
authors.lastname: Ocker
authors.affiliation: Singulus Technologies, Kahl am Main 63796, Germany.
authors.forename: Juergen
authors.initials: J
authors.lastname: Langer
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Kang L
authors.initials: KL
authors.lastname: Wang
authors.affiliation: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, China.
authors.forename: Baoshun
authors.initials: B
authors.lastname: Zhang
authors.affiliation: Department of Engineering, University of Messina, Messina 98166, Italy.
authors.forename: Bruno
authors.identifier: http://orcid.org/0000-0001-7642-6540
authors.initials: B
authors.lastname: Azzerboni
authors.affiliation: Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Pedram Khalili
authors.initials: PK
authors.lastname: Amiri
authors.affiliation: Department of Mathematical and Computer Sciences, Physical Sciences and Earth Sciences, University of Messina, Messina 98166, Italy.
authors.forename: Giovanni
authors.identifier: http://orcid.org/0000-0002-1043-3876
authors.initials: G
authors.lastname: Finocchio
authors.affiliation: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, China.
authors.forename: Zhongming
authors.initials: Z
authors.lastname: Zeng