title: Nonvolatile memory devices based on poly(vinyl alcohol) + graphene oxide hybrid composites.
abstract: Nonvolatile memory devices based on active layers of poly(vinyl alcohol) (PVA) + graphene oxide (GO) hybrid composites have been fabricated. The performance of the ITO/PVA + GO/Al device was compared with that of the ITO/PVA/Al device. The ITO/PVA + GO/Al device showed excellent performance compared to the ITO/PVA/Al device (an ON/OFF resistance ratio of 1.2 × 10(2) at 1 V, V(SET )∼ -1.45 V and V(RESET) ∼ 3.6 V), with a higher ON/OFF resistance ratio of 3 × 10(4) at 1 V and lower operating voltages of V(SET) ∼ -0.75 V and V(RESET) ∼ 3.0 V. Furthermore, endurance performance and write-read-erase-reread (WRER) cycle tests manifest that the presence of GO in ITO/PVA + GO/Al devices makes them have better stability and repeatability. The results show that the performance of hybrid devices can be effectively enhanced by the introduction of GO into the PVA matrix.
authors.affiliation: Communication and Electronics Engineering Institute, Qiqihar University, Qiqihar, 161006, China. sym791122@163.com and HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China. wendianzhong@hlju.edu.cn.
authors.forename: Yanmei
authors.initials: Y
authors.lastname: Sun
authors.affiliation: Communication and Electronics Engineering Institute, Qiqihar University, Qiqihar, 161006, China. sym791122@163.com and HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China. wendianzhong@hlju.edu.cn.
authors.forename: Junguo
authors.initials: J
authors.lastname: Lu
authors.affiliation: HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China. wendianzhong@hlju.edu.cn.
authors.forename: Chunpeng
authors.initials: C
authors.lastname: Ai
authors.affiliation: HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China. wendianzhong@hlju.edu.cn.
authors.forename: Dianzhong
authors.initials: D
authors.lastname: Wen