title: Preparation and Analysis of Atom Probe Tips by Xenon Focused Ion Beam Milling.
abstract: The damage and ion distribution induced in Si by an inductively coupled plasma Xe focused ion beam was investigated by atom probe tomography. By using predefined patterns it was possible to prepare the atom probe tips with a sub 50 nm end radius in the ion beam microscope. The atom probe reconstruction shows good agreement with simulated implantation profiles and interplanar distances extracted from spatial distribution maps. The elemental profiles of O and C indicate co-implantation during the milling process. The presence of small disc-shaped Xe clusters are also found in the three-dimensional reconstruction. These are attributed to the presence of Xe nanocrystals or bubbles that open during the evaporation process. The expected accumulated dose points to a loss of >95% of the Xe during analysis, which escapes undetected.
authors.affiliation: 1University of Grenoble Alpes,F-38000 Grenoble,France.
authors.forename: Robert
authors.initials: R
authors.lastname: Estivill
authors.affiliation: 1University of Grenoble Alpes,F-38000 Grenoble,France.
authors.forename: Guillaume
authors.initials: G
authors.lastname: Audoit
authors.affiliation: 1University of Grenoble Alpes,F-38000 Grenoble,France.
authors.forename: Jean-Paul
authors.initials: JP
authors.lastname: Barnes
authors.affiliation: 1University of Grenoble Alpes,F-38000 Grenoble,France.
authors.forename: Adeline
authors.initials: A
authors.lastname: Grenier
authors.affiliation: 4Groupe de Physique des Matériaux-GPM UMR CNRS 6634,Université de Rouen,France.
authors.forename: Didier
authors.initials: D
authors.lastname: Blavette
keywords: annular milling; atom probe; focused ion beam; sample preparation; xenon