title: Note: High-power piezoelectric transformer fabricated with ternary relaxor ferroelectric Pb(Mg(1/3)Nb(2/3))O3-Pb(In(1/2)Nb(1/2))O3-PbTiO3 single crystal.
abstract: A plate-shaped piezoelectric transformer was designed and fabricated using ternary relaxor ferroelectric single crystal Pb(Mg(1/3)Nb(2/3))O3-Pb(In(1/2)Nb(1/2))O3-PbTiO3. Both the input and output sections utilized the transverse-extensional vibration mode. The frequency and load dependences of the electrical properties for the proposed transformer were systematically studied. Results indicated that under a matching load resistance of 14.9 kΩ, a maximum output power of 2.56 W was obtained with the temperature rise less than 5 °C. The corresponding power density reached up to 50 W/cm(3). This ternary single-crystal transformer had potential applications in compact-size converters requiring high power density.
authors.affiliation: Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China.
authors.forename: Qing
authors.initials: Q
authors.lastname: Wang
authors.affiliation: School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China.
authors.forename: Chuanguo
authors.initials: C
authors.lastname: Ma
authors.affiliation: Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China.
authors.forename: Feifei
authors.initials: F
authors.lastname: Wang
authors.affiliation: Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China.
authors.forename: Bao
authors.initials: B
authors.lastname: Liu
authors.affiliation: Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, 215 Chengbei Road, Jiading, Shanghai 201800, China.
authors.forename: Jianwei
authors.initials: J
authors.lastname: Chen
authors.affiliation: Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, 215 Chengbei Road, Jiading, Shanghai 201800, China.
authors.forename: Haosu
authors.initials: H
authors.lastname: Luo
authors.affiliation: Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China.
authors.forename: Tao
authors.initials: T
authors.lastname: Wang
authors.affiliation: Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China.
authors.forename: Wangzhou
authors.initials: W
authors.lastname: Shi