title: Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices.
abstract: Redox-based resistive switching devices (ReRAM) are considered key enablers for future non-volatile memory and logic applications. Functionally enhanced ReRAM devices could enable new hardware concepts, e.g. logic-in-memory or neuromorphic applications. In this work, we demonstrate the implementation of ReRAM-based fuzzy logic gates using Ta2O5 devices to enable analogous Minimum and Maximum operations. The realized gates consist of two anti-serially connected ReRAM cells offering two inputs and one output. The cells offer an endurance up to 10(6) cycles. By means of exemplary input signals, each gate functionality is verified and signal constraints are highlighted. This realization could improve the efficiency of analogous processing tasks such as sorting networks in the future.
authors.affiliation: Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany.|JARA - Fundamentals for Future Information Technology, Jülich, Germany.
authors.forename: Thomas
authors.initials: T
authors.lastname: Breuer
authors.affiliation: Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, 52074 Aachen, Germany.|JARA - Fundamentals for Future Information Technology, Jülich, Germany.
authors.forename: Lutz
authors.initials: L
authors.lastname: Nielen
authors.affiliation: Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany.|JARA - Fundamentals for Future Information Technology, Jülich, Germany.
authors.forename: Bernd
authors.initials: B
authors.lastname: Roesgen
authors.affiliation: Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany.|Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, 52074 Aachen, Germany.|JARA - Fundamentals for Future Information Technology, Jülich, Germany.
authors.forename: Rainer
authors.initials: R
authors.lastname: Waser
authors.affiliation: Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany.|JARA - Fundamentals for Future Information Technology, Jülich, Germany.
authors.forename: Vikas
authors.initials: V
authors.lastname: Rana
authors.affiliation: Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, 52074 Aachen, Germany.|JARA - Fundamentals for Future Information Technology, Jülich, Germany.
authors.forename: Eike
authors.initials: E
authors.lastname: Linn