title: High-Yield Growth and Characterization of ⟨100⟩ InP p-n Diode Nanowires.
abstract: Semiconductor nanowires are nanoscale structures holding promise in many fields such as optoelectronics, quantum computing, and thermoelectrics. Nanowires are usually grown vertically on (111)-oriented substrates, while (100) is the standard in semiconductor technology. The ability to grow and to control impurity doping of ⟨100⟩ nanowires is crucial for integration. Here, we discuss doping of single-crystalline ⟨100⟩ nanowires, and the structural and optoelectronic properties of p-n junctions based on ⟨100⟩ InP nanowires. We describe a novel approach to achieve low resistance electrical contacts to nanowires via a gradual interface based on p-doped InAsP. As a first demonstration in optoelectronic devices, we realize a single nanowire light emitting diode in a ⟨100⟩-oriented InP nanowire p-n junction. To obtain high vertical yield, which is necessary for future applications, we investigate the effect of the introduction of dopants on the nanowire growth.
authors.affiliation: Department of Applied Physics, Eindhoven University of Technology , 5600 MB Eindhoven, The Netherlands.
authors.forename: Alessandro
authors.initials: A
authors.lastname: Cavalli
authors.affiliation: Department of Applied Physics, Eindhoven University of Technology , 5600 MB Eindhoven, The Netherlands.
authors.forename: Jia
authors.initials: J
authors.lastname: Wang
authors.affiliation: Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands.
authors.forename: Iman
authors.initials: I
authors.lastname: Esmaeil Zadeh
authors.affiliation: Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands.|Institute for Quantum Computing and Department of Electrical and Computer Engineering, University of Waterloo , Waterloo, N2L 3G1, Canada.
authors.forename: Michael E
authors.initials: ME
authors.lastname: Reimer
authors.affiliation: Department of Applied Physics, Eindhoven University of Technology , 5600 MB Eindhoven, The Netherlands.|Philips Innovation Services Eindhoven , 5656 AE Eindhoven, The Netherlands.
authors.forename: Marcel A
authors.initials: MA
authors.lastname: Verheijen
authors.affiliation: Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands.
authors.forename: Martin
authors.initials: M
authors.lastname: Soini
authors.affiliation: Department of Applied Physics, Eindhoven University of Technology , 5600 MB Eindhoven, The Netherlands.|CNRS-Laboratoire d'Analyse et d'Architecture des Systemes (LAAS), Université de Toulouse , 7 avenue du colonel Roche, F-31400 Toulouse, France.
authors.forename: Sebastien R
authors.initials: SR
authors.lastname: Plissard
authors.affiliation: Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands.|Department of Applied Physics, Royal Institute of Technology (KTH) , 114 28 Stockholm, Sweden.
authors.forename: Val
authors.initials: V
authors.lastname: Zwiller
authors.affiliation: Department of Applied Physics, Eindhoven University of Technology , 5600 MB Eindhoven, The Netherlands.
authors.forename: Jos E M
authors.initials: JE
authors.lastname: Haverkort
authors.affiliation: Department of Applied Physics, Eindhoven University of Technology , 5600 MB Eindhoven, The Netherlands.|Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands.
authors.forename: Erik P A M
authors.initials: EP
authors.lastname: Bakkers
keywords: 100; Nanowire; diode; indium phosphide; p−n junction