title: High mobility and high stability glassy metal-oxynitride materials and devices.
abstract: In thin film technology, future semiconductor and display products with high performance, high density, large area, and ultra high definition with three-dimensional functionalities require high performance thin film transistors (TFTs) with high stability. Zinc oxynitride, a composite of zinc oxide and zinc nitride, has been conceded as a strong substitute to conventional semiconductor film such as silicon and indium gallium zinc oxide due to high mobility value. However, zinc oxynitride has been suffered from poor reproducibility due to relatively low binding energy of nitrogen with zinc, resulting in the instability of composition and its device performance. Here we performed post argon plasma process on zinc oxynitride film, forming nano-crystalline structure in stable amorphous matrix which hampers the reaction of oxygen with zinc. Therefore, material properties and device performance of zinc oxynitride are greatly enhanced, exhibiting robust compositional stability even exposure to air, uniform phase, high electron mobility, negligible fast transient charging and low noise characteristics. Furthermore, We expect high mobility and high stability zinc oxynitride customized by plasma process to be applicable to a broad range of semiconductor and display devices.
authors.affiliation: Analytical Engineering Group, Samsung Advanced Institute of Technology, Samsung Electronics Corporation, Suwon 443-803, Republic of Korea.
authors.forename: Eunha
authors.initials: E
authors.lastname: Lee
authors.affiliation: Department of Applied Physics and Department of Display and Semiconductor Physics, Korea University, 2511, Sejongro, Sejong, 446-712, Republic of Korea.
authors.forename: Taeho
authors.initials: T
authors.lastname: Kim
authors.affiliation: Analytical Engineering Group, Samsung Advanced Institute of Technology, Samsung Electronics Corporation, Suwon 443-803, Republic of Korea.
authors.forename: Anass
authors.initials: A
authors.lastname: Benayad
authors.affiliation: Analytical Engineering Group, Samsung Advanced Institute of Technology, Samsung Electronics Corporation, Suwon 443-803, Republic of Korea.
authors.forename: Jihyun
authors.initials: J
authors.lastname: Hur
authors.affiliation: Analytical Engineering Group, Samsung Advanced Institute of Technology, Samsung Electronics Corporation, Suwon 443-803, Republic of Korea.
authors.forename: Gyeong-Su
authors.initials: GS
authors.lastname: Park
authors.affiliation: Department of Applied Physics and Department of Display and Semiconductor Physics, Korea University, 2511, Sejongro, Sejong, 446-712, Republic of Korea.
authors.forename: Sanghun
authors.initials: S
authors.lastname: Jeon