title: Suppressing molecular vibrations in organic semiconductors by inducing strain.
abstract: Organic molecular semiconductors are solution processable, enabling the growth of large-area single-crystal semiconductors. Improving the performance of organic semiconductor devices by increasing the charge mobility is an ongoing quest, which calls for novel molecular and material design, and improved processing conditions. Here we show a method to increase the charge mobility in organic single-crystal field-effect transistors, by taking advantage of the inherent softness of organic semiconductors. We compress the crystal lattice uniaxially by bending the flexible devices, leading to an improved charge transport. The mobility increases from 9.7 to 16.5 cm(2) V(-1) s(-1) by 70% under 3% strain. In-depth analysis indicates that compressing the crystal structure directly restricts the vibration of the molecules, thus suppresses dynamic disorder, a unique mechanism in organic semiconductors. Since strain can be easily induced during the fabrication process, we expect our method to be exploited to build high-performance organic devices.
authors.affiliation: Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.
authors.forename: Takayoshi
authors.initials: T
authors.lastname: Kubo
authors.affiliation: Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.
authors.forename: Roger
authors.initials: R
authors.lastname: Häusermann
authors.affiliation: Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.
authors.forename: Junto
authors.initials: J
authors.lastname: Tsurumi
authors.affiliation: Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.|Department of Applied Physics, Graduate School of Engineering, Osaka University, 1-1 Yamadaoka, Suita, Osaka 567-0047, Japan.
authors.forename: Junshi
authors.initials: J
authors.lastname: Soeda
authors.affiliation: Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.
authors.forename: Yugo
authors.initials: Y
authors.lastname: Okada
authors.affiliation: Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.
authors.forename: Yu
authors.initials: Y
authors.lastname: Yamashita
authors.affiliation: Chemical Resources Laboratory, Tokyo Institute of Technology, R1-12, 4259 Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8503, Japan.
authors.forename: Norihisa
authors.initials: N
authors.lastname: Akamatsu
authors.affiliation: Chemical Resources Laboratory, Tokyo Institute of Technology, R1-12, 4259 Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8503, Japan.|PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan.
authors.forename: Atsushi
authors.initials: A
authors.lastname: Shishido
authors.affiliation: Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.
authors.forename: Chikahiko
authors.initials: C
authors.lastname: Mitsui
authors.affiliation: Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.|PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan.
authors.forename: Toshihiro
authors.initials: T
authors.lastname: Okamoto
authors.affiliation: Department of Physics and Earth Sciences, Faculty of Science, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213, Japan.
authors.forename: Susumu
authors.initials: S
authors.lastname: Yanagisawa
authors.affiliation: Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.
authors.forename: Hiroyuki
authors.initials: H
authors.lastname: Matsui
authors.affiliation: Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.
authors.forename: Jun
authors.initials: J
authors.lastname: Takeya