title: Large and Anisotropic Linear Magnetoresistance in Single Crystals of Black Phosphorus Arising From Mobility Fluctuations.
abstract: Black Phosphorus (BP) is presently attracting immense research interest on the global level due to its high mobility and suitable band gap for potential application in optoelectronics and flexible devices. It was theoretically predicted that BP has a large direction-dependent electrical and magnetotransport anisotropy. Investigations on magnetotransport of BP may therefore provide a new platform for studying the nature of electron transport in layered materials. However, to the best of our knowledge, magnetotransport studies, especially the anisotropic magnetoresistance (MR) effect in layered BP, are rarely reported. Here, we report a large linear MR up to 510% at a magnetic field of 7 Tesla in single crystals of BP. Analysis of the temperature and angle dependence of MR revealed that the large linear MR in our sample originates from mobility fluctuations. Furthermore, we reveal that the large linear MR of layered BP in fact follows a three-dimensional behavior rather than a two-dimensional one. Our results have implications to both the fundamental understanding and magnetoresistive device applications of BP.
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Zhipeng
authors.initials: Z
authors.lastname: Hou
authors.affiliation: State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao 066004, China.
authors.forename: Bingchao
authors.initials: B
authors.lastname: Yang
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Yue
authors.initials: Y
authors.lastname: Wang
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Bei
authors.initials: B
authors.lastname: Ding
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Xiaoming
authors.initials: X
authors.lastname: Zhang
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Yao
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Enke
authors.initials: E
authors.lastname: Liu
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Xuekui
authors.initials: X
authors.lastname: Xi
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Guangheng
authors.initials: G
authors.lastname: Wu
authors.affiliation: Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, China.
authors.forename: Zhongming
authors.initials: Z
authors.lastname: Zeng
authors.affiliation: State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao 066004, China.
authors.forename: Zhongyuan
authors.initials: Z
authors.lastname: Liu
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Wenhong
authors.initials: W
authors.lastname: Wang