title: Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS.
abstract: Fluorine-treated titanium nitride-silicon oxide-hafnium oxide-silicon oxide-silicon devices (hereafter F-MOHOS) are candidates for total ionization dose (TID) radiation sensor applications. The main subject of the study reportedherein is the performance improvement in terms of TID radiation-induced charge generation effect and charge-retention reliability characterization for F-MOHOS devices. In the case of F-MOHOS TID radiation sensors, the gamma radiation induces a significant decrease of threshold voltage VT and the radiation-induced charge density is nearly six times larger than that of standard metal-oxide-nitride-oxide-silicon MONOS devices. The decrease of VT for F-MOHOS after gamma irradiation has a strong correlation to the TID up to 5 Mrad gamma irradiation as well. The improvement of charge retention loss for F-MOHOS devices is nearly 15% better than that of metal-oxide-hafnium oxide-oxide-silicon MOHOS devices. The F-MOHOS device described in this study demonstrates better feasibility for non-volatile TID radiation sensing in the future.
authors.affiliation: Minghsin University of Science and Technology, Xinfeng 30401, Taiwan. wchsieh@must.edu.tw.
authors.forename: Wen-Ching
authors.initials: WC
authors.lastname: Hsieh
authors.affiliation: Treasure Giant Technology Inc., Hsinchu City 30068, Taiwan. danieleewww@gmail.com.
authors.forename: Hao-Tien Daniel
authors.initials: HT
authors.lastname: Lee
authors.affiliation: Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan. fcjong@totalbb.net.tw.
authors.forename: Fuh-Cheng
authors.initials: FC
authors.lastname: Jong
authors.affiliation: National Nano Device Laboratories, Hsinchu 30078, Taiwan. scwu@narlabs.org.tw.
authors.forename: Shich-Chuan
authors.initials: SC
authors.lastname: Wu
keywords: NVM; SONOS; gamma ray; sensor