title: Graphene Monoxide Bilayer As a High-Performance on/off Switching Media for Nanoelectronics.
abstract: The geometries and electronic characteristics of the graphene monoxide (GMO) bilayer are predicted via density functional theory (DFT) calculations. All the possible sequences of the GMO bilayer show the typical interlayer bonding characteristics of two-dimensional bilayer systems with a weak van der Waals interaction. The band gap energies of the GMO bilayers are predicted to be adequate for electronic device application, indicating slightly smaller energy gaps (0.418-0.448 eV) compared to the energy gap of the monolayer (0.536 eV). Above all, in light of the band gap engineering, the band gap of the GMO bilayer responds to the external electric field sensitively. As a result, a semiconductor-metal transition occurs at a small critical electric field (EC = 0.22-0.30 V/Å). It is therefore confirmed that the GMO bilayer is a strong candidate for nanoelectronics.
authors.affiliation: Department of Materials Science and Engineering, Hanyang University , 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
authors.forename: Jungwook
authors.initials: J
authors.lastname: Woo
authors.affiliation: Department of Materials Science and Engineering, Hanyang University , 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
authors.forename: Kyung-Han
authors.initials: KH
authors.lastname: Yun
authors.affiliation: Department of Materials Science and Engineering, Hanyang University , 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
authors.forename: Yong-Chae
authors.initials: YC
authors.lastname: Chung
keywords: band gap; electric field; first-principles calculation; giant Stark effect; graphene monoxide