title: Enhanced electron extraction capability of polymer solar cells via modifying the cathode buffer layer with inorganic quantum dots.
abstract: Enhanced performance of polymer solar cells (PSCs) based on the blend of poly[N-9''-hepta-decanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT):[6,6]-phenyl-C70-butyric acid methyl ester (PC71BM) is demonstrated by titanium dioxide (TiO2) interface modification via CuInS2/ZnS quantum dots (CZdots). Devices with a TiO2/CZdots composite buffer layer exhibit both a high short-circuit current density (Jsc) and fill factor (FF), leading to a power conversion efficiency (PCE) up to 7.01%. The charge transport recombination mechanisms are investigated by an impedance behavior model, which indicates that TiO2 interfacial modification results in not only increasing the electron extraction but also reducing impedance. This study provides an important and beneficial approach to develop high efficiency PSCs.
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Jilin University, College of Electronic Science and Engineering, 2699 Qianjin Street, Changchun 130012, People's Republic of China. shenliang@jlu.edu.cn guowb@jlu.edu.cn.
authors.forename: Zhiqi
authors.initials: Z
authors.lastname: Li
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Jilin University, College of Electronic Science and Engineering, 2699 Qianjin Street, Changchun 130012, People's Republic of China. shenliang@jlu.edu.cn guowb@jlu.edu.cn.
authors.forename: Shujun
authors.initials: S
authors.lastname: Li
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Jilin University, College of Electronic Science and Engineering, 2699 Qianjin Street, Changchun 130012, People's Republic of China. shenliang@jlu.edu.cn guowb@jlu.edu.cn.
authors.forename: Zhihui
authors.initials: Z
authors.lastname: Zhang
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Jilin University, College of Electronic Science and Engineering, 2699 Qianjin Street, Changchun 130012, People's Republic of China. shenliang@jlu.edu.cn guowb@jlu.edu.cn.
authors.forename: Xinyuan
authors.initials: X
authors.lastname: Zhang
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Jilin University, College of Electronic Science and Engineering, 2699 Qianjin Street, Changchun 130012, People's Republic of China. shenliang@jlu.edu.cn guowb@jlu.edu.cn.
authors.forename: Jingfeng
authors.initials: J
authors.lastname: Li
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Jilin University, College of Electronic Science and Engineering, 2699 Qianjin Street, Changchun 130012, People's Republic of China. shenliang@jlu.edu.cn guowb@jlu.edu.cn.
authors.forename: Chunyu
authors.initials: C
authors.lastname: Liu
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Jilin University, College of Electronic Science and Engineering, 2699 Qianjin Street, Changchun 130012, People's Republic of China. shenliang@jlu.edu.cn guowb@jlu.edu.cn and Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0656, USA.
authors.forename: Liang
authors.initials: L
authors.lastname: Shen
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Jilin University, College of Electronic Science and Engineering, 2699 Qianjin Street, Changchun 130012, People's Republic of China. shenliang@jlu.edu.cn guowb@jlu.edu.cn.
authors.forename: Wenbin
authors.initials: W
authors.lastname: Guo
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Jilin University, College of Electronic Science and Engineering, 2699 Qianjin Street, Changchun 130012, People's Republic of China. shenliang@jlu.edu.cn guowb@jlu.edu.cn.
authors.forename: Shengping
authors.initials: S
authors.lastname: Ruan