title: Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy.
abstract: We visualize atomic level dynamics during Si nanowire growth using aberration corrected environmental transmission electron microscopy, and compare with lower pressure results from ultra-high vacuum microscopy. We discuss the importance of higher pressure observations for understanding growth mechanisms and describe protocols to minimize effects of the higher pressure background gas.
authors.affiliation: Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, USA and Department of Electrophysics, College of Science, National Chiao Tung University, Hsinchu, Taiwan. ycchou@nctu.edu.tw and IBM T. J. Watson Research Center, Yorktown Heights, NY, USA. fmross@us.ibm.com.
authors.forename: Yi-Chia
authors.initials: YC
authors.lastname: Chou
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, NY, USA. fmross@us.ibm.com and Engineering Department, University of Cambridge, Cambridge, UK.
authors.forename: Federico
authors.initials: F
authors.lastname: Panciera
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, NY, USA. fmross@us.ibm.com.
authors.forename: Mark C
authors.initials: MC
authors.lastname: Reuter
authors.affiliation: Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, USA.
authors.forename: Eric A
authors.initials: EA
authors.lastname: Stach
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, NY, USA. fmross@us.ibm.com.
authors.forename: Frances M
authors.initials: FM
authors.lastname: Ross