title: InGaN nanowires with high InN molar fraction: growth, structural and optical properties.
abstract: The structural and optical properties of axial GaN/InGaN/GaN nanowire heterostructures with high InN molar fractions grown by molecular beam epitaxy have been studied at the nanoscale by a combination of electron microscopy, extended x-ray absorption fine structure and nano-cathodoluminescence techniques. InN molar fractions up to 50% have been successfully incorporated without extended defects, as evidence of nanowire potentialities for practical device realisation in such a composition range. Taking advantage of the N-polarity of the self-nucleated GaN NWs grown by molecular beam epitaxy on Si(111), the N-polar InGaN stability temperature diagram has been experimentally determined and found to extend to a higher temperature than its metal-polar counterpart. Furthermore, annealing of GaN-capped InGaN NWs up to 800 °C has been found to result in a 20 times increase of photoluminescence intensity, which is assigned to point defect curing.
authors.affiliation: Univ. Grenoble Alpes, 38000 Grenoble, France. CEA, INAC-PHELIQS, 'Nanophysique et semiconducteurs' group, 38000 Grenoble, France. ALEDIA, 17 rue des martyrs, Bât. M23, 38054 Grenoble Cedex 9, France.
authors.forename: Xin
authors.initials: X
authors.lastname: Zhang
authors.forename: Hugo
authors.initials: H
authors.lastname: Lourenço-Martins
authors.forename: Sophie
authors.initials: S
authors.lastname: Meuret
authors.forename: Mathieu
authors.initials: M
authors.lastname: Kociak
authors.forename: Benedikt
authors.initials: B
authors.lastname: Haas
authors.forename: Jean-Luc
authors.initials: JL
authors.lastname: Rouvière
authors.forename: Pierre-Henri
authors.initials: PH
authors.lastname: Jouneau
authors.forename: Catherine
authors.initials: C
authors.lastname: Bougerol
authors.forename: T
authors.initials: T
authors.lastname: Auzelle
authors.forename: D
authors.initials: D
authors.lastname: Jalabert
authors.forename: Xavier
authors.initials: X
authors.lastname: Biquard
authors.forename: Bruno
authors.initials: B
authors.lastname: Gayral
authors.forename: Bruno
authors.initials: B
authors.lastname: Daudin