title: Enhanced Exciton Binding Energy of ZnO by Long-Distance Perturbation of Doped Be Atoms.
abstract: The excitonic effect in semiconductors is sensitive to dopants. Origins of dopant-induced large variation in the exciton binding energy (E(b)) is not well understood and has never been systematically studied. We choose ZnO as a typical high-E(b) material, which is very promising in low-threshold lasing. To the best of our knowledge, its shortest wavelength electroluminescence lasing was realized by ZnO/BeZnO multiple quantum wells (MQWs). However, this exciting result is shadowed by a controversial E(b) enhancement claimed. In this Letter, we reveal that the claimed E(b) is sensible if we take Be-induced E(b) variation into account. Detailed first-principle investigation of the interaction between dopant atoms and the lattice shows that the enhancement mainly comes from the long-distance perturbation of doped Be atoms rather than the local effect of doping atoms. This is a joint work of experiment and calculation, which from the angle of methology paves the way for understanding and predicting the E(b) variation induced by doping.
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University , Guangzhou 510275, China.
authors.forename: Yu Quan
authors.initials: YQ
authors.lastname: Su
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University , Guangzhou 510275, China.|Center for Magnetic Recording Research, University of California, San Diego , 9500 Gilman Drive, La Jolla, California 92093-0401, United States.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Zhu
authors.affiliation: Department of Physics and Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China , Hefei, Anhui 230026, China.
authors.forename: Dingyu
authors.initials: D
authors.lastname: Yong
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University , Guangzhou 510275, China.
authors.forename: Mingming
authors.initials: M
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University , Guangzhou 510275, China.
authors.forename: Longxing
authors.initials: L
authors.lastname: Su
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University , Guangzhou 510275, China.
authors.forename: Anqi
authors.initials: A
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University , Guangzhou 510275, China.
authors.forename: Yanyan
authors.initials: Y
authors.lastname: Wu
authors.affiliation: Department of Physics and Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China , Hefei, Anhui 230026, China.
authors.forename: Bicai
authors.initials: B
authors.lastname: Pan
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University , Guangzhou 510275, China.|The Institute of Applied Physics and Materials Engineering, University of Macau , Avenida da Universidade, Taipa, Macau 999078, China.
authors.forename: Zikang
authors.initials: Z
authors.lastname: Tang