title: High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.
abstract: Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures.
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA.
authors.forename: Jiming
authors.initials: J
authors.lastname: Sheng
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA.
authors.forename: Hao
authors.initials: H
authors.lastname: Wu
authors.affiliation: Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, 90095, USA.
authors.forename: Qiyuan
authors.initials: Q
authors.lastname: He
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA.
authors.forename: Hung-Chieh
authors.initials: HC
authors.lastname: Cheng
authors.affiliation: Sustainable Energy Technologies Center, College of Engineering, King Saud University, Riyadh, 11421, Kingdom of Saudi Arabia.
authors.forename: Muhammad Imran
authors.initials: MI
authors.lastname: Shakir
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA.
authors.forename: Yu
authors.initials: Y
authors.lastname: Huang
authors.affiliation: Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, 90095, USA.
authors.forename: Xiangfeng
authors.initials: X
authors.lastname: Duan
keywords: graphene; graphene-silicon junctions; high current density; tunneling transistors; vertical transistors