title: A partly-contacted epitaxial lateral overgrowth method applied to GaN material.
abstract: We have discussed a new crystal epitaxial lateral overgrowth (ELO) method, partly-contacted ELO (PC-ELO) method, of which the overgrowth layer partly-contacts with underlying seed layer. The passage also illustrates special mask structures with and without lithography and provides three essential conditions to achieve the PC-ELO method. What is remarkable in PC-ELO method is that the tilt angle of overgrowth stripes could be eliminated by contacting with seed layer. Moreover, we report an improved monolayer microsphere mask method without lithography of PC-ELO method, which was used to grow GaN. From the results of scanning electron microscopy, cathodoluminescence, x-ray diffraction (XRD), transmission electron microscopy, and atomic force microscope (AFM), overgrowth layer shows no tilt angle relative to the seed layer and high quality coalescence front (with average linear dislocation density <6.4 × 10(3) cm(-1)). Wing stripes peak splitting of the XRD rocking curve due to tilt is no longer detectable. After coalescence, surface steps of AFM show rare discontinuities due to the low misorientation of the overgrowth regions.
authors.affiliation: School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: Ming
authors.initials: M
authors.lastname: Xiao
authors.affiliation: School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: Jincheng
authors.initials: J
authors.lastname: Zhang
authors.affiliation: School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: Xiaoling
authors.initials: X
authors.lastname: Duan
authors.affiliation: School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: Hengsheng
authors.initials: H
authors.lastname: Shan
authors.affiliation: School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: Ting
authors.initials: T
authors.lastname: Yu
authors.affiliation: School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: Jing
authors.initials: J
authors.lastname: Ning
authors.affiliation: School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: Yue
authors.initials: Y
authors.lastname: Hao